JP2002164257A - Laminated ceramic electronic component - Google Patents
Laminated ceramic electronic componentInfo
- Publication number
- JP2002164257A JP2002164257A JP2000356995A JP2000356995A JP2002164257A JP 2002164257 A JP2002164257 A JP 2002164257A JP 2000356995 A JP2000356995 A JP 2000356995A JP 2000356995 A JP2000356995 A JP 2000356995A JP 2002164257 A JP2002164257 A JP 2002164257A
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- electrode layer
- layer
- ceramic electronic
- multilayer ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、例えば積層セラミ
ックコンデンサ、積層バリスタ、積層誘電体共振器、積
層圧電素子等の積層セラミック電子部品に係り、特に撓
み強度及び耐ヒートサイクル性の高い外部端子電極を形
成した積層セラミック電子部品に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to multilayer ceramic electronic components such as multilayer ceramic capacitors, multilayer varistors, multilayer dielectric resonators and multilayer piezoelectric elements, and more particularly to external terminal electrodes having high flexural strength and heat cycle resistance. The present invention relates to a multilayer ceramic electronic component formed with.
【0002】[0002]
【従来の技術】近年、電子機器等の小型化が進み、ディ
スクリート部品は表面実装タイプの極小チップ部品にな
っており、高電圧又は低電圧の集積回路に用いられる、
例えば積層セラミックコンデンサ等も極小化への要請が
強くなっている。このため、電気回路との接合性も良好
で、電気的特性、信頼性、機械的特性に優れる上に、焼
結体の積層セラミック素体との接合強度が高く、且つ撓
み強度及び耐ヒートサイクル性の高い外部端子電極の要
請が一段と強くなっている。2. Description of the Related Art In recent years, miniaturization of electronic devices and the like has progressed, and discrete components have become surface-mount type microchip components, which are used for high-voltage or low-voltage integrated circuits.
For example, demands for miniaturization of multilayer ceramic capacitors and the like have been increasing. For this reason, the bondability with the electric circuit is good, the electrical characteristics, the reliability, and the mechanical characteristics are excellent. In addition, the bonding strength between the sintered body and the multilayer ceramic body is high, and the bending strength and the heat cycle resistance are improved. The demand for highly terminal external electrodes has become even stronger.
【0003】例えば、図3に示す如く、従来の積層セラ
ミック電子部品としての積層セラミックコンデンサ1
は、Pd,Pt,Ag−Pd等の貴金属又はNi等の卑
金属を用いた内部電極3を印刷した誘電体2のセラミッ
クグリーンシートを順次積層し焼成し、複数に切断して
形成された積層セラミック素体4の両端に、外部端子電
極5を設けている。For example, as shown in FIG. 3, a multilayer ceramic capacitor 1 as a conventional multilayer ceramic electronic component is used.
Is a laminated ceramic formed by sequentially laminating and firing ceramic green sheets of a dielectric 2 on which an internal electrode 3 using a noble metal such as Pd, Pt, Ag-Pd or a base metal such as Ni is printed, and cut into a plurality of pieces. External terminal electrodes 5 are provided at both ends of the element body 4.
【0004】ここで、外部端子電極5においては、前記
内部電極3とのなじみを良くして、その接続部分に接続
不良が生じないように、Ag−Pd又はCu等の金属粉
末にガラスフリットを加えた導電ペーストを塗布し、焼
き付けて下地電極層となる第1電極層5aを形成し、前
記内部電極3の貴金属又は卑金属と融合させることで前
記第1電極層5aと前記内部電極3とを良好な結合状態
にしている。Here, in the external terminal electrode 5, a glass frit is applied to a metal powder such as Ag-Pd or Cu so as to improve the adaptability to the internal electrode 3 and prevent a connection failure at the connection portion. The applied conductive paste is applied and baked to form a first electrode layer 5a serving as a base electrode layer, and the first electrode layer 5a and the internal electrode 3 are fused by being fused with the noble metal or base metal of the internal electrode 3. Has a good bond.
【0005】そして、前記外部端子電極5は、前記第1
電極層5a上に、搭載される基板上の電気回路と接続す
るにあたり、濡れ性及び耐はんだ性の向上、特にはんだ
耐熱性を保持するためにNi等のメッキ皮膜でなる第2
電極層5bと、外部電気接続として用いるはんだとの整
合性を良くするためにSn又はSn−Pdを材料とした
皮膜の第3電極層5cを更に重被覆して形成している。[0005] The external terminal electrode 5 is connected to the first terminal electrode.
When connecting to an electric circuit on a substrate mounted on the electrode layer 5a, a second film made of a plating film of Ni or the like for improving wettability and solder resistance, particularly for maintaining solder heat resistance.
In order to improve the consistency between the electrode layer 5b and the solder used as an external electrical connection, the third electrode layer 5c of a film made of Sn or Sn-Pd is further overcoated.
【0006】前記第2電極層5bの形成は、一般に厚さ
3.0μm前後のNiメッキ層の皮膜によるものであ
り、皮膜部分が極めて小さいため、電流効率を確保する
ために基本組成のワット浴を用いたバレルメッキで処理
されている。The formation of the second electrode layer 5b is generally based on a Ni plating layer having a thickness of about 3.0 μm, and the coating portion is extremely small. It is processed by barrel plating using.
【0007】本来電着応力の少ない、即ち大きい残留応
力を残す浴組成物のNiCl2・6H20(塩化ニッケ
ル)の少ないスルファミン酸浴で処理されるのが理想と
されるが、経済コストを考慮してワット浴を使用してい
るのが一般的であるとされている。[0007] It is ideal that the bath should be treated with a sulfamic acid bath having a low electrodeposition stress, that is, a low NiCl 2 .6H 2 O (nickel chloride) bath composition which leaves a large residual stress. It is generally considered that a watt bath is used in consideration of this.
【0008】[0008]
【発明が解決しようとする課題】処が、その様にして形
成した前記外部端子電極5にはんだ量を多くしたはんだ
着けをする場合、−55〜125℃の耐ヒートサイクル
性に対して劣化する傾向があるので、Niメッキ層の膜
厚を上げることにより対処してきた。その反面,膜厚が
厚くなるほどにメッキ膜の引っ張り応力や圧縮応力が発
生し、撓み強度が劣化するという悪循環が生じていた。However, when the external terminal electrode 5 thus formed is soldered with a large amount of solder, the heat cycle resistance at -55 to 125 ° C. is deteriorated. Because of this tendency, the problem has been dealt with by increasing the thickness of the Ni plating layer. On the other hand, as the film thickness increases, a tensile stress or a compressive stress of the plating film is generated, and a vicious cycle occurs in which the bending strength is deteriorated.
【0009】本発明は、上述の欠点を解消し、撓み強度
及び耐ヒートサイクル性に優れた信頼性の高い極小積層
セラミックコンデンサ等にも適用できる積層セラミック
電子部品を提供することを目的としている。SUMMARY OF THE INVENTION It is an object of the present invention to provide a multilayer ceramic electronic component which solves the above-mentioned drawbacks and can be applied to a highly reliable ultra-small multilayer ceramic capacitor having excellent bending strength and heat cycle resistance.
【0010】本発明のその他の目的や新規な特徴は後述
の実施の形態において明らかにする。[0010] Other objects and novel features of the present invention will be clarified in embodiments described later.
【0011】[0011]
【課題を解決するための手段】上記目的を達成するため
に、本発明は、内部電極を内設した積層セラミック素体
の両端に、Ag−Pd又はCuの下地電極層を、該下地
電極層上にNiメッキ層及びSn又はSn−Pbメッキ
層を順に重層して外部端子電極を形成する積層セラミッ
ク電子部品であって、前記Niメッキ層の厚みが0.1
〜1.0μmの範囲で形成されていることを特徴として
いる。In order to achieve the above-mentioned object, the present invention relates to a multilayer ceramic body having internal electrodes provided therein, and at both ends of the multilayer ceramic body, an underlying electrode layer of Ag-Pd or Cu is provided. A multilayer ceramic electronic component in which an external terminal electrode is formed by sequentially laminating a Ni plating layer and a Sn or Sn-Pb plating layer thereon, wherein the Ni plating layer has a thickness of 0.1.
It is characterized by being formed in a range of up to 1.0 μm.
【0012】前記積層セラミック電子部品において、前
記Niメッキ層が電着メッキで形成されているとよい。In the multilayer ceramic electronic component, the Ni plating layer may be formed by electrodeposition plating.
【0013】[0013]
【発明の実施の形態】以下、本発明に係る積層セラミッ
ク電子部品の実施の形態を図面に従って説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the multilayer ceramic electronic component according to the present invention will be described below with reference to the drawings.
【0014】図1は本発明に係る積層セラミック電子部
品の実施の形態であって、積層セラミックコンデンサ1
を構成した例であり、内部電極3を印刷した誘電体2の
セラミックグリーンシートを積層、焼成して形成された
積層セラミック素体4に外部端子電極5を設けた主要構
成部分を示す。この場合、全体構成は従来の図3の場合
と同様であるが、第1電極層5a(Ag−Pd又はCu
の下地電極層)、第2電極層5b(Ni電気メッキ層)
及び第3電極層5c(Sn又はSn−Pb電気メッキ
層)を順次積層成形してなる外部端子電極5における前
記第2電極層5bに工夫がある。FIG. 1 shows an embodiment of a multilayer ceramic electronic component according to the present invention.
This is an example in which a ceramic green sheet of a dielectric 2 on which an internal electrode 3 is printed is laminated and fired, and a main component portion in which an external terminal electrode 5 is provided on a laminated ceramic body 4 formed is shown. In this case, the overall configuration is the same as that of the conventional case of FIG. 3, but the first electrode layer 5a (Ag-Pd or Cu
Base electrode layer), second electrode layer 5b (Ni electroplated layer)
The second electrode layer 5b in the external terminal electrode 5 formed by sequentially laminating and forming the third electrode layer 5c (Sn or Sn-Pb electroplated layer).
【0015】すなわち、前記第2電極層5bとしてのN
iメッキ層の厚みが0.1〜1.0μmの範囲で形成さ
れ、かつ前記Niメッキ層が電着メッキで形成されるよ
うにしている。その理由を以下に説明する。That is, N as the second electrode layer 5b
The thickness of the i-plated layer is in the range of 0.1 to 1.0 μm, and the Ni-plated layer is formed by electrodeposition plating. The reason will be described below.
【0016】下記表1のNiメッキ組成浴(ワット浴)
及び作業条件で、前記第2電極層5bとしてのNiメッ
キ層厚を、0.05μm、0.10μm、0.50μm、
1.00μm、1.25μm、1.50μm、2.00μm
及び2.50μmとした試料を作製した。Ni plating composition bath (Watt bath) shown in Table 1 below
Under the working conditions, the thickness of the Ni plating layer as the second electrode layer 5b is 0.05 μm, 0.10 μm, 0.50 μm,
1.00 μm, 1.25 μm, 1.50 μm, 2.00 μm
And a sample having a size of 2.50 μm was prepared.
【0017】[0017]
【表1】 [Table 1]
【0018】各試料をそれぞれ100個選び、ヒートサ
イクル試験後のクラック発生数及び350℃溶融のはん
だ処理に対する耐熱性良否を検証し、その結果を、以下
の表2に示す。但し、各試料の第1電極層5aはCuと
し、第3電極層5cはSn−Pb電気メッキとした。One hundred samples were selected, and the number of cracks after the heat cycle test and the heat resistance of the soldering at 350 ° C. were verified. The results are shown in Table 2 below. However, the first electrode layer 5a of each sample was Cu, and the third electrode layer 5c was Sn-Pb electroplated.
【0019】[0019]
【表2】 [Table 2]
【0020】上記表2に示した如く、Niメッキ層が厚
さ0.10〜1.00μmの範囲で、クラック発生数が零
で耐熱性も良く、良好な結果が得られた。厚さ0.05
μm以下であると薄すぎて耐熱性が劣り、厚さ1.25
μm以上になると耐熱性が増すが、図2のNiメッキ膜
厚と撓み強度の関係からも明らかなように撓み強度が低
下し、張力や圧縮力が大きくなり、ヒートサイクル試験
でクラックが発生する。このクラック発生数は少なく判
断され易いが、大量生産においては大きな不良率を誘起
し生産歩留の低下に繋がる。As shown in Table 2, when the thickness of the Ni plating layer was in the range of 0.10 to 1.00 μm, the number of cracks generated was zero, the heat resistance was good, and good results were obtained. Thickness 0.05
When the thickness is less than μm, the heat resistance is inferior because the thickness is too thin.
When the thickness is more than μm, the heat resistance increases, but the flexural strength decreases, the tension and the compressive force increase, and cracks occur in the heat cycle test, as is clear from the relationship between the Ni plating film thickness and the flexural strength in FIG. . Although the number of cracks generated is small and easy to judge, in mass production, a large defect rate is induced, leading to a reduction in production yield.
【0021】従って、耐熱性からNiメッキ層膜を厚く
することは必要であるが、高張力や圧縮力を考慮する
と、耐熱性が維持できる最低限の厚さを確保すればよ
く、その厚さの範囲は0.10μm〜1.00μmで充分
であることが理解できる。Therefore, it is necessary to increase the thickness of the Ni plating layer from the viewpoint of heat resistance. However, in consideration of high tension and compressive force, it is sufficient to secure a minimum thickness capable of maintaining heat resistance. It can be understood that the range of 0.10 μm to 1.00 μm is sufficient.
【0022】この厚さに限定することによりメッキコス
トも廉価になり、且つ、高張力や圧縮力を抑制するメッ
キ組成液の選択も不必要になる。By limiting the thickness to this, the plating cost is reduced and the selection of a plating composition solution for suppressing high tension and compressive force becomes unnecessary.
【0023】以上本発明の実施の形態について説明して
きたが、本発明はこれに限定されることなく請求項の記
載の範囲内において各種の変形、変更が可能なことは当
業者には自明であろう。Although the embodiments of the present invention have been described above, it is obvious to those skilled in the art that the present invention is not limited to the embodiments and various modifications and changes can be made within the scope of the claims. There will be.
【0024】[0024]
【発明の効果】以上説明したように、本発明は、内部電
極を内設した積層セラミック素体の両端に、Ag−Pd
又はCuの下地電極層を、該下地電極層上にNiメッキ
層及びSn又はSn−Pbメッキ層を順に重層して外部
端子電極を形成する積層セラミック電子部品であって、
前記Niメッキ層の厚みが0.1〜1.0μmの範囲で形
成されているので、撓み強度及び耐ヒートサイクル性に
優れた信頼性の高い極小積層セラミックコンデンサ等に
も適用できる積層セラミック電子部品を得ることが出来
る。As described above, according to the present invention, Ag-Pd is provided at both ends of a multilayer ceramic body having an internal electrode provided therein.
Or a multilayer ceramic electronic component in which a Cu base electrode layer, an Ni terminal layer and a Sn or Sn—Pb plate layer are sequentially laminated on the base electrode layer to form external terminal electrodes,
Since the thickness of the Ni plating layer is formed in a range of 0.1 to 1.0 μm, the multilayer ceramic electronic component can be applied to a highly reliable ultra-small multilayer ceramic capacitor having excellent bending strength and heat cycle resistance. Can be obtained.
【図1】本発明に係る積層セラミック電子部品の実施の
形態を示す要部拡大断面図である。FIG. 1 is an enlarged sectional view of a main part showing an embodiment of a multilayer ceramic electronic component according to the present invention.
【図2】平面のNiメッキ膜厚と撓み強度との関係を示
すグラフである。FIG. 2 is a graph showing a relationship between a flat Ni plating film thickness and bending strength.
【図3】従来の積層セラミック電子部品の正断面図であ
る。FIG. 3 is a front sectional view of a conventional multilayer ceramic electronic component.
1 積層セラミック電子部品 2 誘電体 3 内部電極 4 積層セラミック素体 5 外部端子電極 5a 第1電極層 5b 第2電極層 5c 第3電極層 DESCRIPTION OF SYMBOLS 1 Multilayer ceramic electronic component 2 Dielectric 3 Internal electrode 4 Multilayer ceramic element 5 External terminal electrode 5a 1st electrode layer 5b 2nd electrode layer 5c 3rd electrode layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岡部 昌幸 東京都中央区日本橋一丁目13番1号ティー ディーケイ株式会社内 (72)発明者 吉井 彰敏 東京都中央区日本橋一丁目13番1号ティー ディーケイ株式会社内 Fターム(参考) 5E001 AB03 AC04 AF00 AH07 AJ03 5E082 AA01 AB03 BC33 FG26 GG10 GG26 PP09 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Masayuki Okabe 1-13-1 Nihonbashi, Chuo-ku, Tokyo TDK Corporation (72) Inventor Akitoshi Yoshii 1-13-1 Nihonbashi, Chuo-ku, Tokyo TDK F term in the company (reference) 5E001 AB03 AC04 AF00 AH07 AJ03 5E082 AA01 AB03 BC33 FG26 GG10 GG26 PP09
Claims (2)
の両端に、Ag−Pd又はCuの下地電極層を、該下地
電極層上にNiメッキ層及びSn又はSn−Pbメッキ
層を順に重層して外部端子電極を形成する積層セラミッ
ク電子部品であって、前記Niメッキ層の厚みが0.1
〜1.0μmの範囲で形成されていることを特徴とする
積層セラミック電子部品1. A laminated ceramic body having an internal electrode provided therein, an Ag-Pd or Cu base electrode layer on both ends, and a Ni plating layer and a Sn or Sn-Pb plating layer on the base electrode layer in this order. A multilayer ceramic electronic component for forming an external terminal electrode, wherein the Ni plating layer has a thickness of 0.1.
A multilayer ceramic electronic component characterized by being formed in a range of about 1.0 μm.
れている請求項1記載の積層セラミック電子部品。2. The multilayer ceramic electronic component according to claim 1, wherein said Ni plating layer is formed by electrodeposition plating.
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JP2000356995A JP2002164257A (en) | 2000-11-24 | 2000-11-24 | Laminated ceramic electronic component |
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Family
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Cited By (8)
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GB2389708A (en) * | 2002-04-15 | 2003-12-17 | Avx Corp | Plated terminations for an electronic component |
US6960366B2 (en) | 2002-04-15 | 2005-11-01 | Avx Corporation | Plated terminations |
US6972942B2 (en) | 2002-04-15 | 2005-12-06 | Avx Corporation | Plated terminations |
US7154374B2 (en) | 2002-04-15 | 2006-12-26 | Avx Corporation | Plated terminations |
US7177137B2 (en) | 2002-04-15 | 2007-02-13 | Avx Corporation | Plated terminations |
US7463474B2 (en) | 2002-04-15 | 2008-12-09 | Avx Corporation | System and method of plating ball grid array and isolation features for electronic components |
JP2011258737A (en) * | 2010-06-09 | 2011-12-22 | Alps Green Devices Co Ltd | Coil encapsulation green compact core and device having coil encapsulation green compact core, and manufacturing method of coil encapsulation green compact core and manufacturing method of device |
US20150243438A1 (en) * | 2014-02-27 | 2015-08-27 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic capacitor and board having the same |
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US10366835B2 (en) | 2002-04-15 | 2019-07-30 | Avx Corporation | Plated terminations |
GB2389708A (en) * | 2002-04-15 | 2003-12-17 | Avx Corp | Plated terminations for an electronic component |
US6982863B2 (en) | 2002-04-15 | 2006-01-03 | Avx Corporation | Component formation via plating technology |
GB2389708B (en) * | 2002-04-15 | 2006-04-12 | Avx Corp | Component formation via plating technology |
US7067172B2 (en) | 2002-04-15 | 2006-06-27 | Avx Corporation | Component formation via plating technology |
US7154374B2 (en) | 2002-04-15 | 2006-12-26 | Avx Corporation | Plated terminations |
US7152291B2 (en) | 2002-04-15 | 2006-12-26 | Avx Corporation | Method for forming plated terminations |
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US7463474B2 (en) | 2002-04-15 | 2008-12-09 | Avx Corporation | System and method of plating ball grid array and isolation features for electronic components |
US7344981B2 (en) | 2002-04-15 | 2008-03-18 | Avx Corporation | Plated terminations |
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US10020116B2 (en) | 2002-04-15 | 2018-07-10 | Avx Corporation | Plated terminations |
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