JP2002145987A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an epoxy resin composition which has excellent flowability and excellent curability and can give cured products that can achieve V-0 on a UL-94 vertical test without containing a flame retardant, hardly warps when subjected to a soldering treatment, and has excellent soldering crack resistance. SOLUTION: This epoxy resin composition for sealing area mounting type semiconductors is characterized by containing (a) an epoxy resin of formula (1), (b) an epoxy resin brained by the glycidyl-etherification of a mixture of phenolic compounds of formulas (2), and (3), a resin curing agent containing a resin curing agent of formula (4) in an amount of 30 to 100 wt.% based on the total resin curing agents, an inorganic filler, and a curing accelerator as essential components. Therein, the contents of the components (a) and (b) are 30 to 70 wt.% and 30 to 70 wt.%, respectively, based on the total epoxy resins, and the equivalent ratio of the epoxy groups in the total epoxy resins to the phenolic hydroxyl groups in the total resin curing agents is 0.5 to 2. The inorganic filler is contained in an amount of 75 to 95 wt.% based on the total epoxy resin composition, and the curing accelerator is contained in an amount of 0.4 to 25 pts.wt. per 100 pts.wt. of the sum of the total epoxy resin and the total resin curing agents.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a so-called area mounting type semiconductor device in which a semiconductor element is mounted on one surface of a printed wiring board or a metal lead frame, and substantially only one of the mounting surfaces is resin-sealed. The present invention relates to a suitable epoxy resin composition for semiconductor encapsulation and a semiconductor device using the same.

[0002]

2. Description of the Related Art In recent years, in the market trend of miniaturization, weight reduction and high performance of electronic equipment, high integration of semiconductor elements has been progressing year by year, and surface mounting of semiconductor devices has been promoted. In recent years, area-mounted semiconductor devices have been developed, and are beginning to shift from semiconductor devices having conventional structures. A typical example of an area-mounted semiconductor device is a BGA (ball grid array) or a CSP (chip scale package) pursuing further miniaturization.
The surface-mount type semiconductor device represented by P has been developed in order to meet the demand for more pins and higher speed, which is approaching the limit. As the structure, on one side of a rigid circuit board represented by a BT resin / copper foil circuit board (bismaleimide / triazine resin / glass cloth board) or a flexible circuit board represented by a polyimide resin film / copper foil circuit board A semiconductor element is mounted, and only the semiconductor element mounting surface, that is, only one side of the substrate is molded and sealed with an epoxy resin composition or the like. Further, on the surface opposite to the semiconductor element mounting surface of the substrate, solder balls are formed two-dimensionally in parallel, and are characterized in that they are joined to a circuit board on which a semiconductor device is mounted. Further, as a substrate on which a semiconductor element is mounted, a structure using a metal substrate such as a lead frame has been developed in addition to the above-described organic circuit substrate.

The structure of these area-mounted semiconductor devices is as follows:
A single-sided sealing configuration is adopted in which only the semiconductor element mounting surface of the substrate is sealed with the epoxy resin composition and the solder ball forming surface is not sealed. On a metal substrate such as a lead frame, a sealing resin layer of about several tens of μm may be present even on the surface on which the solder ball is formed, but several hundred μm on the surface on which the semiconductor element is mounted.
Since a sealing resin layer having a thickness of about several mm is formed, substantially single-sided sealing is achieved. For this reason, these semiconductor devices may be affected by mismatch of thermal expansion and thermal shrinkage between the organic substrate or the metal substrate and the cured product of the epoxy resin composition, or the effect of curing shrinkage during molding and curing of the epoxy resin composition. In this case, warpage tends to occur immediately after molding. Further, when soldering is performed on a circuit board on which these semiconductor devices are mounted, 200
Although the semiconductor device undergoes a heating process at a temperature of ℃ or more, warping of the semiconductor device also occurs at this time, and many solder balls do not become flat and rise from the circuit board on which the semiconductor device is mounted, and the reliability of the electrical connection is reduced. Deteriorating problems occur.

In a semiconductor device in which substantially only one surface on a substrate is sealed with an epoxy resin composition, in order to reduce warpage, the thermal expansion coefficient of the substrate and the thermal expansion coefficient of a cured product of the epoxy resin composition are determined. Two approaches are important: approaching the same and reducing the amount of cure shrinkage of the cured product of the epoxy resin composition. As a substrate, an organic substrate has a high glass transition temperature (hereinafter, referred to as T) such as BT resin or polyimide resin.
g) are widely used and have a Tg higher than around 170 ° C., which is the molding temperature of the epoxy resin composition. Therefore, during the cooling process from the molding temperature to room temperature, the organic substrate contracts only in the region of the linear expansion coefficient (hereinafter referred to as α1). Accordingly, if the cured product of the epoxy resin composition has a high Tg, the same α1 as that of the organic substrate, and the curing shrinkage is zero, the warpage is considered to be almost zero. For this reason, a method has already been proposed in which Tg is increased by combining a polyfunctional epoxy resin and a polyfunctional phenol resin, and α1 is adjusted by the amount of the inorganic filler.

[0005] When soldering is performed by soldering by means such as infrared reflow, vapor phase soldering, or solder immersion, moisture present inside the semiconductor device due to moisture absorption from the cured epoxy resin composition and the organic substrate. Cracks occur in the semiconductor device due to stress caused by rapid vaporization at high temperatures, and peeling may occur at the interface between the semiconductor element mounting surface of the organic substrate and the cured epoxy resin composition. In addition to low stress and low moisture absorption of products, adhesion to organic substrates is also required. Conventional B
In area-mounted semiconductor devices such as GA and CSP, a triphenolmethane-type epoxy resin and an epoxy resin composition containing a triphenolmethane-type phenol resin as a resin component have been used to reduce warpage. This epoxy resin composition has a high Tg, curability, and properties having excellent flexural strength when heated. However, the moisture absorption of the cured product is high, and the melt viscosity of the epoxy resin composition is relatively high. However, there is a limit in increasing the amount of the inorganic filler, and there is a problem in that the moisture absorption is insufficient and the solder crack resistance is poor.

On the other hand, in a conventional surface mount type semiconductor device such as QFP or SOP, a crystalline epoxy resin such as a biphenyl type epoxy resin is used in order to prevent cracks at the time of solder mounting and peeling at interfaces between materials. Is used to increase the filling of inorganic fillers, but the problem is that the flexural strength when heated is lower and curing is slower than the cured epoxy resin composition using a triphenolmethane-type epoxy resin. Met. Therefore, in order to obtain an epoxy resin composition having a small warpage, excellent curability, excellent bending strength under heat, and excellent solder crack resistance due to low moisture absorption, the characteristics of the triphenolmethane type epoxy resin and the crystalline epoxy resin are utilized. Therefore, even when using an appropriate amount of both epoxy resins at the time of the production of the epoxy resin composition, or using a pre-melted mixture of both epoxy resins, the warpage when using a triphenolmethane type epoxy resin is small, It has not been possible to achieve both the characteristics of excellent curability and bending strength under heat, and the characteristic of excellent solder crack resistance when using a crystalline epoxy resin to increase the filling of inorganic fillers. ,
It was not enough.

Further, in these epoxy resin compositions,
In order to ensure flame retardancy, a halogen-based flame retardant and antimony oxide are blended as flame retardants. However, the environment
From the viewpoint of hygiene, there is a demand for the development of an epoxy resin composition having excellent flame retardancy without using a halogen-based flame retardant and antimony oxide. To meet this demand, hydroxides such as aluminum hydroxide and magnesium hydroxide, and boron compounds have been studied. However, if not added in large amounts, the flame retardant effect is not exhibited, and there are many impurities and moisture resistance. It has not been put to practical use due to its problem in nature. A red phosphorus-based flame retardant is effective when added in a small amount, and is useful for making an epoxy resin composition flame-retardant. However, red phosphorus reacts with a small amount of water to generate phosphine and corrosive phosphoric acid, so that moisture resistance is low. However, it cannot be used for epoxy resin compositions for semiconductor encapsulation, which have extremely severe requirements for moisture resistance. For this reason, red phosphorus particles are coated with an organic compound such as aluminum hydroxide, metal oxides, other inorganic compounds, and thermosetting resins to stabilize the red phosphorus, but there is still a problem with moisture resistance. In fact, there is no epoxy resin composition that can achieve both flame retardancy and moisture resistance without using a halogen-based flame retardant or antimony oxide. In addition to environmental and sanitary considerations, when a semiconductor device sealed with an epoxy resin composition containing a halogen-based flame retardant and antimony oxide is stored at a high temperature, a halide thermally decomposed from these flame-retardant components is used. Is known to cause corrosion of the joints of the semiconductor elements, thereby deteriorating the reliability of the semiconductor device. From such a point, it is excellent in flame retardancy without using a halogen-based flame retardant and antimony oxide. Development of epoxy resin compositions is required. As described above, the corrosion resistance of the bonding portion (bonding pad portion) of the semiconductor element after storing the semiconductor device at a high temperature (for example, 185 ° C.) is called a high-temperature storage characteristic, and the high-temperature storage characteristic is improved. As a method, a method using diantimony pentoxide (JP-A-55-1469) is used.
No. 50) and a method of combining antimony oxide and an organic phosphine (Japanese Patent Application Laid-Open No. 61-53321) have been proposed and their effects have been confirmed. Is becoming difficult to satisfy.

[0008]

DISCLOSURE OF THE INVENTION The present invention has a small warpage after molding or soldering, and has resistance to solder cracking, fluidity,
An epoxy resin composition for semiconductor encapsulation suitable for area-mount type semiconductor devices, which has excellent curability and can achieve V-0 in a UL-94 vertical test without blending a flame retardant, and a semiconductor device using the same. Is provided.

[0009]

Means for Solving the Problems The present invention provides [1] (A)
An epoxy resin (a) represented by the general formula (1), (B) an epoxy resin (b) mixed with a phenol compound represented by the formula (2) and a phenol compound represented by the formula (3), and glycidyl etherified; (C) a resin curing agent containing 30 to 100% by weight of a resin curing agent represented by the general formula (4) in all resin curing agents, (D) an inorganic filler, and (E) a curing accelerator as essential components, (A) is 30 to 7 in all epoxy resins
0% by weight, and (b) is 30 to 7 in the total epoxy resin.
0% by weight, and the equivalent ratio of epoxy groups in all epoxy resins to phenolic hydroxyl groups in all resin curing agents is 0.5 to 2
And the inorganic filler in the total epoxy resin composition is 75 to
95% by weight, wherein the curing accelerator is 0.4 to 25 parts by weight per 100 parts by weight of the total amount of all epoxy resins and all resin curing agents object.

Embedded image (Wherein R1 and R2 are alkyl groups having 1 to 4 carbon atoms,
a is an integer of 0 to 3 and b is an integer of 0 to 4, which may be the same or different. n is an average value, 1 to 1
Positive number of 0. )

[0010]

Embedded image

[0011]

Embedded image (R3 and R4 in the formula are alkyl groups having 1 to 4 carbon atoms,
c is an integer of 0 to 3 and d is an integer of 0 to 4, which may be the same or different. n is an average value, 1 to 1
Positive number of 0. [2] The epoxy resin composition for semiconductor encapsulation according to [1], wherein bromine atoms and antimony atoms contained in the entire epoxy resin composition are each less than 0.1% by weight,
[3] A semiconductor element is mounted on one surface of a substrate, and substantially only one surface on the substrate surface side on which the semiconductor element is mounted uses the epoxy resin composition described in [1] or [2]. And a semiconductor device characterized by being sealed.

[0012]

BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, by combining a specific epoxy resin and a specific resin curing agent, warpage after molding and soldering is small, and solder crack resistance, fluidity and curability are excellent. UL-94 without flame retardant
It was found that an epoxy resin composition capable of achieving V-0 in a vertical test was obtained. The epoxy resin represented by the general formula (1) used in the present invention has a novolak structure containing a biphenyl derivative in the molecule, and the resin curing agent represented by the general formula (4) has a novolak structure containing a naphthalene derivative in the molecule. And an aromatic resin such as a biphenyl derivative or a naphthalene derivative in the molecule of an epoxy resin or a resin curing agent. When the epoxy resin and the resin curing agent contain an aromatic ring such as a biphenyl derivative or a naphthalene derivative, the bonding energy between the molecules increases, and decomposition by combustion hardly occurs, so that flame retardancy is exhibited. Further, those having a larger number of aromatic rings in the molecule of the epoxy resin or the resin curing agent, that is, those containing an anthracene derivative than a naphthalene derivative are more difficult to burn, and the flame retardancy is improved, but the softening point is increased. There is a problem in fluidity, and biphenyl derivatives and naphthalene derivatives are optimal because of good balance between flame retardancy and fluidity. In addition, the epoxy resin of the present invention and the resin curing agent have a hydrophobic aromatic ring, and the distance between crosslinks is larger than that of a general-purpose ortho-cresol novolak type epoxy resin or phenol novolak resin, so that moisture absorption is caused. Due to the relatively low rate, the semiconductor device using the epoxy resin composition of the present invention can achieve high reliability even under soldering during mounting.

The epoxy resin (a) represented by the general formula (1) used in the present invention is a novolak structure epoxy resin containing a biphenyl derivative in the molecule. Specifically, phenols and bis (methoxymethylene) It is an epoxy resin obtained by subjecting a phenol resin obtained by a Friedel-Crafts alkylation reaction with biphenols to glycidyl etherification. N in the general formula (1) is an average value of 1 to 10, and if n exceeds 10, the viscosity becomes too high and the fluidity decreases, which is not preferable.

Epoxy resin (b) obtained by mixing the phenol compound represented by the formula (2) and the phenol compound represented by the formula (3) and glycidyl etherifying the mixture.
Imparts excellent fluidity and curability. The mixing ratio of the phenol compound of the formula (2) to the phenol compound of the formula (3) is preferably 10/90 to 90/10 by weight. The method for synthesizing the epoxy resin (b) of the present invention is not particularly limited. For example, after dissolving the mixed phenolic compounds of the formulas (2) and (3) in an excess of epichlorohydrin, sodium hydroxide, potassium hydroxide At 50 to 150 ° C, preferably 60 to 120 ° C in the presence of an alkali metal hydroxide such as
For 10 to 10 hours. After the reaction,
Excess epichlorohydrin is distilled off, the residue is dissolved in a solvent such as toluene or methyl isobutyl ketone, filtered, washed with water to remove inorganic salts, and then the solvent is distilled off to obtain the desired epoxy resin (b). Can be obtained. It is desirable that the generated epoxy resin (b) has as few chlorine ions, sodium ions and other free ions as possible.

When the epoxy resin (a) is adjusted to 30 to 70% by weight in the total epoxy resin and the epoxy resin (b) is adjusted to 30 to 70% by weight in the total epoxy resin,
Even without adding a brominated epoxy resin or antimony oxide in the epoxy resin composition, it becomes easy to obtain V-0 level flame retardancy. The epoxy resin (a) has 30% of the total epoxy resin.
If it is less than 70% by weight, good flame retardancy cannot be obtained, and if it exceeds 70% by weight, the fluidity becomes poor. Also, epoxy resin (b)
However, if the total epoxy resin content is less than 30% by weight, the fluidity is poor, and if it exceeds 70% by weight, good flame retardancy cannot be obtained. In order to maximize the properties of the epoxy resin (a) and the epoxy resin (b), it is preferable that each of the epoxy resins is contained in an amount of 30% by weight or more in all the epoxy resins. Flammability is obtained. Other epoxy resins can be used together as long as the properties of the epoxy resin (a) and the epoxy resin (b) are not impaired. Examples of epoxy resins that can be used in combination include bisphenol A epoxy resin, bisphenol F epoxy resin, stilbene epoxy resin, phenol novolak epoxy resin, orthocresol novolak epoxy resin, naphthol novolak epoxy resin, and triphenolmethane epoxy. Examples include resins, dicyclopentadiene-modified phenol-type epoxy resins, terpene-modified phenol-type epoxy resins, and hydroquinone-type epoxy resins, but are not limited thereto.

Since the resin curing agent represented by the general formula (4) used in the present invention has at least two rigid α-naphthol skeletons (naphthalene derivatives) in one molecule, an epoxy resin composition using the same Has the property that the moisture absorption of the cured product is reduced. Furthermore, when compared with a resin curing agent having a β-naphthol skeleton, the epoxy resin composition has a characteristic that the curing shrinkage of the epoxy resin composition at the time of curing is small, and a decrease in adhesive strength or a decrease in Tg of the cured product is unlikely to occur. . Further, by including the resin curing agent represented by the general formula (4) in the entire resin curing agent in an amount of 30% by weight or more, preferably 80% by weight or more, the semiconductor device sealed with the epoxy resin composition can have a high resistance. Excellent solder cracking properties and reduced warpage. If the amount is less than 30% by weight, the curing shrinkage cannot be reduced, so that the warpage increases. Further, depending on the resin curing agent used in combination, the water absorption increases, and the solder cracking resistance decreases, which is not preferable. Further, n in the general formula (4) is an average value of 1 to 10, and if n exceeds 10, the fluidity during transfer molding tends to decrease and moldability tends to deteriorate, which is not preferable. When a resin curing agent represented by the general formula (4) is used in combination with another resin curing agent, for example, a phenol novolak resin, a cresol novolak resin,
Examples thereof include a dicyclopentadiene-modified phenol resin, a phenol aralkyl resin, a terpene-modified phenol resin, and a triphenolmethane compound.

The equivalent ratio of the epoxy groups of all epoxy resins to the phenolic hydroxyl groups of the resin curing agent is preferably 0.5 to 2. If it is less than 0.5 or more than 2, it is not preferable because the curability of the epoxy resin composition is lowered, or the Tg of the cured product is lowered.

The kind of the inorganic filler used in the present invention is not particularly limited, and those generally used for a sealing material can be used. For example, fused silica,
Examples thereof include fused spherical silica, crystalline silica, secondary aggregated silica, alumina, titanium white, and aluminum hydroxide. Particularly preferred is fused spherical silica. The shape of the spherical silica particles is preferably infinitely spherical in order to improve fluidity, and the particle size distribution is preferably broad.
From the balance of moldability and reliability, the content of the inorganic filler is preferably 75 to 95% by weight in the entire epoxy resin composition. If the amount is less than 75% by weight, the warpage increases, and good reliability cannot be obtained. If the amount exceeds 95% by weight, problems arise in moldability, which is not preferable. It is preferable that the inorganic filler is sufficiently mixed in advance. If necessary, it may be used after previously treating with a coupling agent, an epoxy resin or a resin curing agent. Examples of the treatment method include a method of removing the solvent after mixing with a solvent, and a method of directly using an inorganic filler. And processing using a mixer.

As the curing accelerator used in the present invention, any one can be used as long as it promotes a curing reaction between an epoxy group and a phenolic hydroxyl group, and those generally used for a sealing material can be widely used. For example, 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine, benzyldimethylamine, 2-methylimidazole and the like can be mentioned, and these may be used alone or as a mixture. The content of the curing accelerator is 0.4 to 2 per 100 parts by weight of the total amount of the epoxy resin and the resin curing agent.
5 parts by weight are preferred. If the amount is less than 0.4 parts by weight, sufficient curability may not be obtained during heat molding. Meanwhile, 2
If the amount exceeds 5 parts by weight, curing may be too fast and poor filling may occur due to a decrease in fluidity during molding.

The epoxy resin composition of the present invention comprises (A)
In addition to the component (E), a flame retardant such as a brominated epoxy resin or antimony oxide may be contained as necessary, but the semiconductor device must have stable electrical characteristics at a high temperature of 150 to 200 ° C. In such applications, the content of bromine atoms and antimony atoms is preferably less than 0.1% by weight in the total epoxy resin composition, and more preferably not completely contained. When the content of bromine atoms is 0.1% by weight or more, when stored at a high temperature, bromide that is thermally decomposed from the flame retardant component is liberated, thereby corroding the joint of the semiconductor element and possibly impairing the reliability of the semiconductor device. There is. or,
From the viewpoint of environmental protection, it is desirable that the content of each of the bromine atom and the antimony atom is less than 0.1% by weight and that they are not contained as much as possible. The epoxy resin composition of the present invention comprises, in addition to the components (A) to (E), if necessary, an inorganic ion exchanger such as bismuth oxide hydrate and a coupling agent such as γ-glycidoxypropyltrimethoxysilane. , Colorants such as carbon black and red iron oxide, low stress components such as silicone oil and silicone rubber, release agents such as natural wax, synthetic wax, higher fatty acids and their metal salts or paraffin, and various additives such as antioxidants May be appropriately compounded. The epoxy resin composition of the present invention comprises (A)
The (E) component and other additives are mixed at room temperature using a mixer, melt-kneaded with a kneader such as a roll, kneader, extruder, or the like, cooled, and pulverized. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor element using the epoxy resin composition of the present invention, it is sufficient to cure and mold by a molding method such as a transfer mold, a compression mold, and an injection mold. In particular, the epoxy resin composition of the present invention is suitable for an area mounting type semiconductor device.

[0021]

EXAMPLES The present invention will be described in more detail with reference to the following Examples, which should not be construed as limiting the present invention. The mixing ratio is by weight. Example 1 2.26 parts by weight of an epoxy resin of the formula (5) (softening point: 57 ° C., epoxy equivalent: 274)

Embedded image

A mixture of a phenol compound represented by the formula (2) and a phenol compound represented by the formula (3) at a weight ratio of 1: 1 is glycidyl-etherified epoxy resin (softening point: 100 ° C.) 2.26 parts by weight of a phenolic resin of the formula (6) (softening point 85 ° C., hydroxyl equivalent 210) 4.68 parts by weight

Embedded image Fused spherical silica (average particle diameter 15 μm, specific surface area 2.2 m ² / g) 88.0 parts by weight 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU) 2.00 parts by weight Carbon Black 0.30 parts by weight Carnauba wax 0.50 parts by weight was mixed at room temperature using a mixer, kneaded at 70 to 120 ° C. using two rolls, cooled, and ground to obtain an epoxy resin composition. . The obtained epoxy resin composition was evaluated by the following method.

Spiral flow: EMMI-1-66
The measurement was performed at a mold temperature of 175 ° C., a pressure of 7 MPa, and a curing time of 120 seconds using a mold for spiral flow measurement according to the above. The unit is cm. Curing torque: Using a curast meter (manufactured by Orientec Co., Ltd., JSR curast meter IVPS type)
The torque was determined at a mold temperature of 175 ° C. and 90 seconds after the start of heating. The torque in the curast meter is a parameter of curability, and the larger the numerical value, the better the curability. The unit is N · m. -Moisture absorption: mold temperature 1 using a transfer molding machine
50m diameter at 75 ° C, pressure 7MPa, curing time 120 seconds
m, a disk having a thickness of 3 mm, post-curing at 175 ° C. for 8 hours, and 168 ° C. in an environment of 85 ° C. and 60% relative humidity.
It was left for a while and the change in weight was measured to determine the moisture absorption. The unit is% by weight.・ Package warpage: Using a transfer molding machine
352pBGA at mold temperature 175 ° C, pressure 7MPa, curing time 120 seconds (substrate 0.56mm thick, bismaleimide triazine / glass cloth substrate, package size 35x35mm, thickness 2.00mm, silicon chip size A chip and a bonding pad of a circuit board having a size of 10 × 10 mm and a thickness of 0.35 mm were bonded with a gold wire having a diameter of 25 μm), and post-cured at 175 ° C. for 8 hours. After cooling to room temperature, the displacement in the height direction was measured using a surface roughness meter in the diagonal direction from the gate of the package, and the value of the largest displacement difference was defined as the amount of warpage. The unit is μm. -Solder crack resistance: Using a transfer molding machine
At a mold temperature of 175 ° C., an injection pressure of 800 N / cm ² , and a curing time of 120 seconds, eight 352 pBGAs were molded.
Post-curing was performed at 5 ° C. for 8 hours. Then, after processing at 60 ° C. and a relative humidity of 60% for 120 hours, IR reflow processing (2
40 ° C.) (hereinafter referred to as L2A) and 85%
After treating for 168 hours at 60 ° C. and a relative humidity of 60%, two levels of a level (hereinafter, referred to as L2) subjected to an IR reflow treatment (240 ° C.) were performed. After the treatment, the presence or absence of internal peeling and cracks was observed with an ultrasonic flaw detector, and the number of defective packages was counted. When the number of defective packages is n, it is displayed as n / 8. -Flame retardancy: mold temperature 1 using transfer molding machine
Specimens (thickness 1.6) at 75 ° C, pressure 7MPa, 120 seconds
mm) and was post-cured at 175 ° C. for 8 hours. Thereafter, the following judgment was made according to the UL-94 vertical test. Judgment of flame retardancy (V-0): Fmax within 10 seconds, ΔF
Is within 50 seconds and Gmax is within 30 seconds. Judgment of flame retardancy (V-1): Fmax within 30 seconds, ΔF
Is within 250 seconds and Gmax is within 60 seconds. (However, Fmax is the maximum value of framing time (unit is second), ΔF is the total of framing time (unit is second), G
max is the maximum value of the glowing time (unit: seconds).・ High temperature storage characteristics: Using a transfer molding machine, the molding temperature is 175 ° C., the pressure is 7 MPa, and the curing time is 120 seconds.
pDIP (chip size 3.0 mm × 3.5 mm) was molded and post-cured at 175 ° C. for 8 hours. Thereafter, a high-temperature storage test (185 ° C., 1000 hours) was performed, and the package in which the electric resistance between the wirings increased by 20% from the initial value was determined to be defective. The percentage defective in 15 packages is shown as a percentage. Units%. -Content of Br atom and Sb atom: Compression molded to a diameter of 40 mm and a thickness of 5 to 7 mm at a pressure of 5.9 MPa, and using a fluorescent X-ray analyzer, bromine atoms in all epoxy resin compositions;
The content of antimony atoms was quantified. The unit is% by weight.

Examples 2 to 9 and Comparative Examples 1 to 9 According to the formulations shown in Tables 1 and 2, an epoxy resin composition was obtained in the same manner as in Example 1, and evaluated in the same manner as in Example 1. The results are shown in Tables 1 and 2. The properties of the epoxy resin and the phenol resin used in other than Example 1 are shown below. An orthocresol novolak epoxy resin (softening point 55 ° C., epoxy equivalent 196); a phenolic resin of the formula (7) (softening point 110 ° C., hydroxyl equivalent 98);

Embedded image

A phenolic resin of the formula (8) (softening point 70
° C, hydroxyl equivalent 170),

Embedded image

A resin curing agent of the formula (9) (softening point 70 ° C.,
Hydroxyl equivalent 190).

Embedded image

[0027]

[Table 1]

[0028]

[Table 2]

[0029]

According to the present invention, semiconductor encapsulation which is excellent in fluidity and curability and can achieve V-0 in a UL-94 vertical test without blending a flame retardant, which is suitable for an area-mounted type semiconductor device. An epoxy resin composition for use is obtained, and a semiconductor device using the same has a small warpage after molding or soldering, and is excellent in solder crack resistance.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 23/31 F-term (Reference) 4J002 CC033 CD03W CD05X CD06W DE136 DE146 DJ016 EN067 EU097 EU117 EW017 FA086 FD016 FD143 FD157 GQ05 4J036 AA05 AC01 AC02 AC03 AD07 AD08 AF03 AF06 AF22 AJ01 AJ02 AJ03 AJ14 AK19 DA04 DB11 DC02 DC38 DC40 DD07 FA01 FA05 FA06 FB08 JA07 4M109 AA01 BA03 CA05 EA03 EB03 EB04 EB12 EC05 EC20

Claims (3)

[Claims] 1. A glycidyl ether obtained by mixing (A) an epoxy resin (a) represented by the general formula (1) and (B) a phenol compound represented by the formula (2) and a phenol compound represented by the formula (3). Epoxy resin (b), (C) a resin curing agent represented by the general formula (4)
A resin curing agent containing 0 to 100% by weight, (D) an inorganic filler,
And (E) a curing accelerator as an essential component, wherein (a) is 30 to 70% by weight in all epoxy resins, (b) is 30 to 70% by weight in all epoxy resins, and The equivalent ratio of the epoxy group to the phenolic hydroxyl group in the total resin curing agent is 0.5 to 2, the inorganic filler is 75 to 95% by weight in the total epoxy resin composition, and the curing accelerator is the total epoxy resin. An epoxy resin composition for area mounting type semiconductor encapsulation, wherein the amount is 0.4 to 25 parts by weight per 100 parts by weight of the total amount of the resin and all the resin curing agents. Embedded image (Wherein R1 and R2 are alkyl groups having 1 to 4 carbon atoms,
a is an integer of 0 to 3 and b is an integer of 0 to 4, which may be the same or different. n is an average value of 1 to 10
Positive number of. ) Embedded image (R3 and R4 in the formula are alkyl groups having 1 to 4 carbon atoms,
c is an integer of 0 to 3 and d is an integer of 0 to 4, which may be the same or different. n is an average value of 1 to 10
Positive number of. ) 2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein bromine atoms and antimony atoms contained in all the epoxy resin compositions are each less than 0.1% by weight. 3. A semiconductor element is mounted on one side of a substrate, and substantially only one side on the side of the substrate on which the semiconductor element is mounted is sealed with the epoxy resin composition according to claim 1 or 2. A semiconductor device characterized in that: