JP2002094392A - Transmission power control method and transmission power controller, and mobile wireless station - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mobile wireless station that attains an optimum power supply efficiency, even when transmission rate or the like differs or the transmission power and the battery voltage fluctuate. SOLUTION: In the transmission power controller, where a high frequency power amplifier circuit 111 has a semiconductor amplifier element adopting a common source connection, controlling the gate voltage and/or the drain voltage of the semiconductor amplifier element linearly changes the gain of the high-frequency power amplifier circuit 111 for controlling transmission power. Preferably, a gate voltage control variable is read from a table 113, and drain voltage control variable is read from a table 117. Thus, even when the dynamic range of transmission power control is wide, the dynamic range is ensured without increasing the circuit scale, and the power supply efficiency when the battery voltage is high; and when the output power is low, and other than maximum output power is improved, without deteriorating the modulation distortion characteristics.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transmission power control method and apparatus for use in a mobile radio station such as a portable telephone.
In particular, the present invention relates to a transmission power control method and apparatus suitable for increasing power efficiency (efficiency of high-frequency output with respect to DC power consumption), and a mobile radio station equipped with the transmission power control apparatus.

[0002]

2. Description of the Related Art FIG. 12 is a block diagram of a conventional transmission power control device. The transmission power control device in FIG. 12 includes a level variable circuit 1215 at the IF stage, a mixer 1213 that converts an IF signal into an RF signal, a level variable circuit (amplifier circuit with gain control) 1214 that controls the gain of this RF signal. , And amplifies the output of level varying circuit 1214 to produce output signal P _OU.
A high-frequency power amplifier circuit 1211 for _T and a transmission control circuit 1 for controlling the two level variable circuits 1215 and 1214
212. High frequency power amplifier circuit 1211
Normally has a source amplifier (or emitter grounded) semiconductor amplifying element, which includes a drain voltage V _DD (or a collector voltage V _CC ) and a gate voltage V _CC.
GG (or base voltage V _BB ) is applied.

In this conventional transmission power control device, the transmission power is controlled by level variable circuits 1215 and 1214 in the IF stage and the RF stage.
The gain of 1 is constant. The high-frequency power amplifier circuit 12
As the drain voltage (or collector voltage) of the mobile communication device 11, a voltage substantially equal to the output voltage of the storage battery provided in the mobile communication device is supplied, and the adjacent channel leakage power standard at the time of the maximum power output required for the mobile communication system. The operating voltage point of the drain voltage (or the collector voltage) and the operating voltage point of the gate voltage (or the base voltage) are determined so as to satisfy the following conditions. No variable control of the voltage point is performed.

[0004] Incidentally, as related to the prior art, there is one described in, for example, JP-A-7-336243.

[0005]

In a mobile communication system, if the transmission rate or the like is different, the required maximum output power is also different. For this reason, when the operating voltage points of the drain voltage (or the collector voltage) and the gate voltage (or the base voltage) are fixed as in the above-described related art, the maximum output power of the mobile communication system decreases. Power mode, the power efficiency decreases when the transmission power in the mobile communication system decreases, and the power efficiency increases when the battery voltage is sufficiently high at the maximum output power. A problem arises that the power efficiency is remarkably reduced as compared with the power efficiency.

The present invention has been made in view of the above-mentioned problems of the prior art, and has a transmission power control method and a transmission power control method capable of achieving optimum power supply efficiency even when the transmission rate or the like is different or the transmission power or battery voltage fluctuates. It is intended to provide the device.

[0007]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a transmission power control for a transmission power control device having a semiconductor amplifying element in which a high-frequency power amplifying circuit is grounded at the source. This is achieved by controlling the transmission power by linearly changing the gain of the high-frequency power amplifier circuit by controlling only the voltage (claims 1 and 9).

Preferably, in the above, the drain voltage is controlled when the transmission output level of the high-frequency power amplifier circuit exceeds a predetermined level, and when the transmission output level is below the predetermined level, both the gate voltage and the drain voltage are controlled. In addition, the control value of the drain voltage and / or the control value of the gate voltage are read from table values prepared in advance. Further, the control value of the drain voltage is determined according to the detected value of the battery voltage (claims 2 to 4, 10 to 12).

The above object is also achieved in a transmission power control of a transmission power control device in which a high frequency power amplifier circuit has a semiconductor amplifying element whose source is grounded and supplies a battery voltage to a drain terminal of the semiconductor amplifying element. When the transmission output level of the circuit is equal to or higher than a threshold level lower than a maximum output level and the battery voltage is equal to or lower than a reference level, the battery voltage is supplied to a drain terminal of the semiconductor amplifier, and the transmission output level is equal to the threshold value. When the battery voltage is equal to or higher than the level and the battery voltage exceeds the reference level, the battery voltage is reduced to the reference level and supplied to the drain terminal (claims 5 and 13).

Preferably, in the above, when the transmission output level is lower than the reference level, the drain voltage control according to any one of claims 1 to 4 is performed (claims 6 and 14).

The above object is also achieved when a plurality of mobile communication systems using different communication systems have different maximum output powers or a plurality of modes having different maximum output powers exist. By applying the transmission power control of claim 5 only to the mobile communication system or mode having the highest maximum output, and applying the transmission power control of claim 1 to other mobile communication systems or modes, Is achieved (claims 7, 14).

When the semiconductor amplifying element is not a field effect transistor but a semiconductor element having a collector, an emitter and a base, a collector voltage is used instead of the drain voltage, and a base voltage is used instead of the gate voltage. An emitter ground is used instead of the source ground.

Further, the detecting means for detecting the transmission output level includes a detecting diode, and a biasing means for applying a DC bias voltage to an anode of the detecting diode, and the signal detected by the detecting means is converted to an APC signal.
(Automatic Power Control) control and drain voltage control.

Since the high-frequency power amplifier circuit is configured to satisfy the adjacent channel leakage power standard required for the mobile communication system, the high-frequency power amplifier circuit has a low transmission output power other than the maximum output power required for the mobile communication system. Output modulation distortion characteristics with a sufficient margin. Therefore, the drain (collector) bias point of the high-frequency power amplifier circuit and / or
Alternatively, by optimally controlling the gate (base) bias point, the power supply efficiency can be improved, and transmission power control with a wide dynamic range can be performed. Further, even when the battery voltage is sufficiently high, the power supply efficiency can be improved by controlling the drain (collector) bias point of the high-frequency power amplifier circuit.

Therefore, according to the present invention, even when the dynamic range of the transmission power control is wide, the dynamic range can be secured without increasing the circuit scale, the modulation distortion characteristic is not deteriorated, and when the battery voltage is high, The power efficiency at low power other than the maximum output power can be improved.

[0016]

An embodiment of the present invention will be described below with reference to the drawings. In the following embodiments, a field effect transistor (FET) is used as a semiconductor amplifying element used in a high-frequency power amplifier circuit, so the terms drain, gate, and source are used. However, a normal transistor is used instead of the FET. Therefore, the terms drain, gate, and source in this specification also refer to the collector, base, and emitter of a normal transistor, respectively, and vice versa.

FIG. 1 shows a transmission system according to a first embodiment of the present invention.
FIG. 2 is a block diagram of a transmission power control device. This transmission power
The control device includes a semiconductor amplifying element whose source is grounded.
High frequency power amplifier circuit 111 for amplifying the power of a high frequency signal
And a gate voltage V of the semiconductor amplifying element._GGControl the sending
Signal control circuit 112 and V that determines the value of the gate voltage.
_GGA table 113 and a drain electrode of the semiconductor amplifying element.
A transmission control circuit 116 for controlling the voltage,
V_DDV that determines the value of_DDTable 117 and transmission
The control circuit 116 is, for example, a DC / DC having a high conversion efficiency.
Equipped with voltage controllers such as converters and linear regulators
I can.

The transmission control circuit 112 has a linear control signal A
Gate voltage V _GG from the V _GG table 113 based on the
Is read and output to the high-frequency power amplifier circuit 111,
The transmission control circuit 116 reads out the optimum value of the drain voltage V _DD from the V _DD table 117 based on the battery voltage monitor signal which is the battery voltage information and the linear control signal B, and outputs it to the high frequency power amplifier 111. .

The gate voltage V _{GG according} to the first embodiment is
Of the transmission control circuit 112 according to the linear control signal A.
Is read from the table 113, but the _VGG table 113
The high-frequency power amplifier circuit 1 for the linear control signal A
The _VGG voltage values are _tabulated so that the gain of No. 11 becomes linear. Similarly, the value of the drain voltage V _DD of the high-frequency power amplifier circuit 111 is read from the table 116 by the transmission control circuit 116 according to the control signal B and the battery voltage monitor signal. This table 116 is created as follows.

When the reference battery voltage of the battery voltage is V _M and the maximum battery voltage (fully charged battery voltage) is V _H (V _M <V _H ),
The maximum battery voltage V _H corresponds to the maximum voltage of an external charger, the maximum voltage of an external power supply, and the like. High frequency power amplifier circuit 11
During the first maximum transmission output power, the reference battery voltage V _M the value of the drain voltage V _DD that can achieve the best power efficiency.

[0021] Under such setting, a high frequency power amplifier circuit 111 sends a maximum output power, and, when the battery voltage is determined by the battery voltage monitor signal is greater than the reference battery voltage V _M, the drain voltage V _DD is controlled to be equal to the reference battery voltage VM, and when the high-frequency power amplifier circuit 111 has a transmission power lower than the maximum output power, the output modulation distortion of the high-frequency power amplifier circuit 111 depends on the transmission power level. characteristics as going down below the reference battery voltage V _M in a range not to deteriorate the table 116 is created.

Here, the maximum transmission output power of the high-frequency power amplifier circuit 111 is set as the threshold, but the maximum transmission output power does not always need to be set as the threshold, and a power value somewhat lower than the maximum transmission output power may be set as the threshold. Obviously this holds true. It is also clear that the value of the drain voltage V _DD at which the high-frequency power amplifier circuit can achieve the best power supply efficiency at the maximum transmission output power may not be equal to the reference battery voltage VM.

FIGS. 2 and 3 show that the battery voltage is a certain constant voltage V.
It is a diagram showing characteristics of a high frequency power amplifier circuit when _{(V M ≦ V B ≦ V} H) of _B. FIG. 2 shows the output power (P) of the high-frequency power amplifier applying the collector voltage V _CC and the base voltage V _BB.
Collector voltage with respect _OUT) V _{C C} and the base voltage V _BB and the adjacent channel leakage power (ACLR = output distortion characteristics)
Is measured in almost the same ACLR state.
According to FIG. 2, when the output power level (P _OUT ) is reduced under a constant ACLR, the collector voltage V _CC and the base voltage V _BB have characteristics of being reduced.

FIG. 3 shows the current consumption (I _total ) and the gain (Ga) with respect to the output power (P _OUT ) of the high-frequency power amplifier circuit to which the collector voltage V _CC and the base voltage V _BB are applied.
in) was measured in almost the same ACLR state as in FIG. The characteristics for each output power are as follows:
It corresponds to the collector voltage V _CC and the base voltage V _BB in FIG.

According to FIG. 3, the output power level (P _OUT )
Is reduced under a constant ACLR, the voltage gain (G
ain) has a substantially constant gain in the variable region of the collector voltage V _CC , and has a characteristic that the gain is substantially constant at a low output level to which the variable region of the base voltage V _BB is applied. Therefore, when the base voltage control and the collector voltage control are performed, the power efficiency is significantly improved as compared with the power efficiency when these controls are not performed (the total current consumption in FIG. 3 is significantly improved). Become.).

From the above, by controlling the base voltage and the collector voltage while maintaining the ACLR characteristics, the ACLR
It is possible to increase gain control efficiency and power supply efficiency without deteriorating R. Also, by utilizing this characteristic and setting the base voltage V _BB to a linear control signal so that the gain of the high-frequency power amplifier circuit becomes linear, even if the gain of the high-frequency power amplifier circuit becomes equal to the base voltage V _BB . without linear with the collector voltage V _CC, in the low output region is possible to use a high frequency power amplifier circuit as a linear level variable circuit, further, it is possible to improve the power efficiency.

As described above, in the first embodiment, the V _GG stored in a memory or the like in advance is connected to the drain and the gate of the semiconductor amplifying element whose source is grounded in the high-frequency power amplifying circuit.
Each voltage of the drain voltage value and the gate voltage value read out from the table and the _VDD table based on the battery voltage monitor signal and the like is applied. As a result, the gain of the high-frequency power amplifier circuit can be changed linearly, and the drain voltage and the gate voltage can be controlled so that the output modulation distortion is optimized. Furthermore, the gate voltage and drain voltage can be reduced, and the power supply efficiency of the high-frequency power amplifier circuit is improved at low transmission output power other than the maximum output power required for mobile communication systems and when the battery voltage is sufficiently high. Can be done.

FIG. 4 shows a transmission system according to the second embodiment of the present invention.
FIG. 2 is a block diagram of a transmission power control device. This transmission power
The control device increases the high-frequency power to amplify
Width circuit 411 and gate voltage V_GGControl the transmission control times
Path 412 and the drain voltage V _DDTransmission control circuit to control
416 and the output signal of the high-frequency power amplifier circuit 411 are detected.
Detection circuit 420 and the transmission control circuit 412_GG
V whose value is read_GGTable 413 and transmission control circuit
VDD table 4 from which the VDD value is read by 416
17 and I provided at a stage preceding the high-frequency power amplifier circuit 411.
The level of the F signal can be set according to the detection voltage of the detection circuit 420.
The transmission control circuit 4
16 is, for example, a DC / DC converter with high conversion efficiency
(See Fig. 8) and a voltage regulator such as a linear regulator
Prepare.

The transmission control circuit 412 generates a linear control signal A
Gate voltage V _GG from V _GG table 413 based on
Is read and output to the high frequency power amplifier circuit 411,
The transmission control circuit 416 reads out the optimum value of the drain voltage V _DD from the V _DD table 117 based on the battery voltage monitor signal as the battery voltage information and the linear control signal B, and outputs the read value to the high frequency power amplifier circuit 411. .

The detection circuit 420 is a high-frequency power amplification circuit 4
11 (transmission level), and notifies the transmission control circuit 412 and the transmission control circuit 416 of the detected voltage. Then, as shown in FIG. 5, the transmission control circuits 412 and 416 perform the drain voltage (V _DD ) control without performing the gate voltage (V _GG ) control at the time of high output power, and perform general high-frequency power with a constant gain. The high-frequency power amplifier 411 is set to operate as an amplifier. In the low output level region, both the gate voltage control and the drain voltage control are performed, and the high-frequency power amplifier circuit 411 is set to operate as a level conversion circuit.

As described above, in the high power range from the predetermined power level lower than the maximum output level to the maximum output level, the drain voltage is within a range in which the output modulation distortion can satisfy the adjacent channel leakage power standard of the mobile communication system. Only in the low power region below the predetermined power level, the gain changes linearly within a range where the output modulation distortion of the high frequency power amplifier circuit can satisfy the adjacent channel leakage power standard of the mobile communication system. In addition, by controlling both the drain voltage and the gate voltage, a high-frequency power amplifier circuit, which is generally used at a constant gain / constant operating bias point, can be used as a level variable circuit (variable amplifier or variable attenuator), and the transmission rate is controlled. Power efficiency and gain control efficiency can be improved even when the power changes or battery voltage or transmission power fluctuates. It further becomes possible to achieve a reduction in circuit scale.

FIG. 6 is a flowchart showing a control procedure of the transmission power control apparatus according to the third embodiment of the present invention.
In this flowchart, as an example, the gate voltage (V
_GG ) The power level at which control is performed is set to P _L or less, and the maximum output level is set to P _H (P _L <P _H ). The reference battery voltage of the battery voltage is V _M , and the maximum battery voltage (fully charged battery voltage) is V _H
To (V _M <V _H). Here, the maximum battery voltage V _H also corresponds to the maximum voltage of an external charger, the maximum voltage of an external power supply, and the like. V _DD voltage best power efficiency at the maximum transmission time of the output power of the high frequency power amplifier circuit can be achieved also with reference battery voltage V _M.

First, the output level of the high-frequency power amplifier circuit is detected by the detection circuit (see 420 in FIG. 4) (step S6).
01) Then, the output level is determined in step S6.
02 and step 606 are performed in parallel. Step S60
2 is a step of determining whether to perform V _GG control of the high frequency power amplifier circuit 411, step S606 selects the V _DD control of the high frequency power amplifier circuit (in this embodiment three V _DD control Are prepared.) This is the step.

In step S602, it is determined whether the transmitter output level is _{equal to} or higher than P _L. If the output level is smaller than P _L, it is determined that the output level is the low output area in FIG. 5 and the process proceeds to steps S603 and S604, and the level variable circuit (41 in FIG.
9), the transmission control circuit 412 reads out the optimum value from the V _GG table to control the gate voltage (V _GG ) of the high-frequency power amplifier 411 by the control signal A, and controls the high-frequency power amplifier 411. Decrease gain.

If it is determined in step S602 that the output level is higher than P _L , the process proceeds to step S605, where the gate voltage control of the high-frequency power amplifier circuit is not performed (the high-frequency power amplifier having a constant gain). It operates as a circuit.), And performs only the level control of the level variable circuit.

[0036] At step S606, the maximum output level determines whether the P _H. If the maximum output level is determined to be P _H detects the battery voltage. In step S607 (i.e., reads the battery voltage monitor signal), whether or not the battery voltage is V _M or more Is determined (step S608).

[0037] When the battery voltage level is less than V _M, the process proceeds to step S609, performs V _DD control I. V _DD control I
Is control to directly supply the battery voltage as the drain voltage. If the battery voltage level is greater than V _M, the process proceeds from step S608 to step S610, V _DD control
Do II. The V _DD control II, a control to apply a reference voltage V _M as a drain voltage of the semiconductor amplifying element of the high frequency power amplifier circuit.

On the other hand, if it is determined in step S606 that the output level is lower than the maximum output level P _H , the flow advances to step S611 to perform the V _DD control III. And the V _{D D} control III, so as not to degrade the characteristics of the output distortion of the high frequency power amplifier circuit, as the drain voltage is gradually drops below V _M based on V _DD table 413 corresponding to the battery voltage level Control.

[0039] In this way, by controlling the high frequency power amplifier circuit using V _GG tables and V _DD table, V _GG
Compared with the power supply efficiency when the control and the V _DD control are not performed, the control with the power supply efficiency can be performed, and the gain and the output modulation distortion can be controlled.

FIG. 7 is a flowchart showing a control procedure of the transmission power control apparatus according to the fourth embodiment of the present invention. In addition, compared with the flowchart of FIG.
Steps 602 to S605 are omitted.

In this embodiment, as an example, the maximum output level is set to P _H, and the output power level of a certain threshold is set to P _M (P _M ≦ P _H ). In addition, the reference battery voltage of the battery voltage is V _M
And the maximum battery voltage (fully charged battery voltage) is V _H (V _M <V _H ). Here, the maximum battery voltage V _H also corresponds to the maximum voltage of an external charger, the maximum voltage of an external power supply, and the like. V at which the best power supply efficiency can be achieved at the maximum transmission output power of the high-frequency power amplifier circuit (see 411 in FIG. 4).
_{The DD} voltage is also the reference battery voltage VM.

[0042] In this control procedure, first, it detects the transmitter output level detection circuit (420 see Fig. 4) (step S701), then in step S702, the output level is the threshold level P _M of the It is determined whether it is larger. Step S7 in the case of the output level> P _M
In step 03, the battery voltage level is read with reference to the battery voltage monitor signal. In the next step S704, the battery voltage level is equal to or less than the above reference battery voltage V _M, when (the determination result YES) voltage level ≦ V _M of the proceeds to step S705, the later Figure 8 The battery voltage is directly supplied to the drain by bypassing the circuit for controlling the drain voltage by using the circuit of (1). If it is determined in step S704 that the voltage level is greater than V _M (the determination result is NO), the flow advances to step S706 to execute the _VDD control I.
The V _DD control I In this embodiment, a control to make V _DD voltage is the reference battery voltage V _M.

[0043] In step S702, in case it is determined that the output level ≦ P _M (the determination result is NO), the step S7
In step 07, the V _DD control II is executed. In this embodiment, V
The _DD control II, so as not to degrade the characteristics of the output distortion of the high frequency power amplifier circuit, based on V _DD table corresponding to the battery voltage, as the drain voltage falls below the reference battery voltage V _M control Say.

As described above, the voltage drop by the power supply voltage control circuit due to the drain current of the high-frequency power amplifier circuit is large, and the voltage control circuit is bypassed at a power level that cannot supply a desired drain voltage to the high-frequency power amplifier circuit. As a result, the optimum drain voltage can always be supplied to the high-frequency power amplifier circuit, and the power supply efficiency can be improved.

FIG. 8 is a configuration diagram of a bypass portion provided in the transmission control circuit 416 of FIG. The transmission control circuit 416 is interposed between a battery (battery) 801 mounted on the mobile radio station and a drain terminal of a semiconductor amplification element (not shown) of the high-frequency power amplification circuit 411,
A voltage control circuit 802 using a DC / DC converter IC;
The MOSFET 803 is provided in parallel. This M
The OSFET 803 is turned on when the control proceeds to step 705 in FIG. 7, and is turned off when the control proceeds to step 706.

Thus, when the output level is higher than P _M and the battery voltage level is lower than the reference voltage V _M , the battery voltage is connected to the drain terminal of the semiconductor amplifying element by the MOSFET 8.
Is directly applied through 03, when the output level is and the battery voltage level is larger than the reference voltage V _M at greater than P _M, D
The voltage control circuit 802 is applied to the drain terminal is lowered to the battery voltage to the reference voltage V _M with C / DC converter IC. Further, when the output level is smaller than P _M, so as not to degrade the characteristics of the output distortion of the high frequency power amplifier circuit 411, a V _DD table corresponding to the battery voltage drain voltage is below the reference voltage V _M based on D like going down
A voltage applied to the drain terminal is controlled by a voltage control circuit 802 using a C / DC converter IC.

FIG. 9 is a flowchart showing a control procedure of the transmission power control apparatus according to the fifth embodiment of the present invention. In addition, compared with the flowchart of FIG.
Steps 602 to S605 are omitted.

In the fifth embodiment, the mobile communication system having the highest required maximum output voltage is defined as system A, and the other mobile communication systems are defined as system B.
It is assumed that the maximum output level of the mobile communication system A is P _H1 , the maximum output level of the mobile communication system B is P _H2 , and a certain threshold level is P _M (P _H2 ≦ P _M ≦ P _H1 ). Also, the reference voltage of the battery voltage is V _M , the maximum battery voltage (fully charged battery voltage)
Is V _H (V _M <V _H ). Here, the maximum battery voltage V
_H corresponds to the maximum voltage of the external charger, the maximum voltage of the external power supply, and the like. The V _DD voltage that achieves the best power supply efficiency at the time of the maximum transmission output power of the high-frequency power amplifier circuit 411 is also set to the reference battery voltage VM.

In this embodiment, first, the identification signal of the mobile communication system sent from the base station is detected (step S901), and it is determined whether the mobile communication system is A or B (step S902). . If it is determined that the system is the system A, the process proceeds to step S903, where the detection circuit detects the output level, and the process proceeds to step S9.
04, the output level is equal to or greater than the threshold level P _M. Output level when the larger than the threshold level P _M with reference to the battery voltage monitoring signal (step S905), then determines whether the current battery voltage level is below the reference voltage V _M (step S906) .

[0050] Then, if the current battery voltage level below the reference voltage V _M, the process proceeds to step S907, DC / D
A voltage control circuit using a C converter IC is bypassed, and a battery voltage is directly supplied to a drain terminal of a semiconductor amplifier of a high-frequency power amplifier. If the output level is between the maximum output level P _H1 and the threshold level P _M, for a load current of the high frequency power amplifier circuit is large, the voltage drop is also increased by the voltage control circuit using a DC / DC converter. In other words, if the output level is within this range and the battery voltage level is equal to or lower than the reference voltage, the DC / DC converter cannot supply an optimal drain voltage. Is supplied directly to the drain terminal.

[0051] If the current battery voltage level is larger than the reference voltage V _M, the process proceeds to step S908, executes the _VDD control I. The V _DD control I In this embodiment, a control for supplying a reference voltage V _M to the drain terminal by a voltage control circuit using a DC / DC converter IC.

[0052] In step S904, the case where the output level is determined to be below the threshold level P _M (judgment result is N
In step O), the flow advances to step S909 to execute the V _DD control II. This V _DD control II is a high-frequency power amplifier circuit 411
DC / DC converter IC based on the V _DD table according to the battery voltage so as not to deteriorate the characteristic of output modulation distortion of
A control for gradually lowering the drain voltage below the reference voltage V _M by the voltage control circuit using.

If it is determined in step S902 that the mobile communication system is the system B, the voltage drop of the voltage control circuit using the DC / DC converter IC caused by the load current of the high-frequency power amplifier circuit is a problem. Therefore, the process proceeds to step S910, and the DC / DC converter I based on the V _DD table corresponding to the battery voltage is used so as not to deteriorate the output modulation distortion characteristics of the high-frequency power amplifier circuit.
Control by a voltage control circuit using C ( _VDD control III) is performed.

As described above, in the mobile communication system in which the required maximum output voltage is the highest, the power supply voltage control circuit causes a large voltage drop due to the drain current of the high-frequency power amplifier circuit, so that the power cannot supply a desired drain voltage to the drain terminal. Level, the drain control by the DC / DC converter is bypassed.
Since the drain control is performed by the / DC converter, the optimum drain voltage can always be supplied to the high-frequency power amplifier circuit.
Power supply efficiency can be improved, and gain and output modulation distortion can be controlled.

FIG. 10 is a flowchart showing a control procedure of the transmission power control apparatus according to the sixth embodiment of the present invention. In addition, compared with the flowchart of FIG.
Steps 602 to S605 are omitted.

In a mobile communication system, there are cases where a plurality of modes having different required maximum output powers exist due to different transmission rates and the like. In the sixth embodiment, the mode in which the required maximum output voltage is the highest is mode A, and the other modes are mode B. The maximum output level of mode A is P _H1 , the maximum output level of mode B is P _H2 , and a certain threshold level is P _M (P _H2 ≦ P _M ≦ P _H1 ). Also, the reference voltage of the battery voltage V _M, the maximum battery voltage (full-charge battery _{voltage) V H (V M <V} H). Here, the maximum battery voltage V _H corresponds to the maximum voltage of an external charger, the maximum voltage of an external power supply, or the like.
V _DD that achieves the best power efficiency at the maximum transmission output power of 1
Voltage is also a reference battery voltage V _M.

In this embodiment, first, a mode identification signal sent from the base station is detected (step S10).
1) Next, it is determined whether the mode is A or B (step S102). Here, the flow proceeds to step S103 if it is determined that the mode A, detects an output level by the detection circuit, at step S104, determines whether the output level is greater than the threshold level P _M. Output level when the larger than the threshold level P _M with reference to the battery voltage monitoring signal (step S105), then determines whether the current battery voltage level is below the reference voltage V _M (step S106) .

[0058] Then, if the current battery voltage level below the reference voltage V _M, the process proceeds to step S107, DC / D
A voltage control circuit using a C converter IC is bypassed, and a battery voltage is directly supplied to a drain terminal of a semiconductor amplifier of a high-frequency power amplifier. If the output level is between the maximum output level P _H1 and the threshold level P _M, for a load current of the high frequency power amplifier circuit is large, the voltage drop is also increased by the voltage control circuit using a DC / DC converter. That is, when the output level is within this range and the battery voltage level is equal to or lower than the reference voltage, it becomes impossible to supply an optimum drain voltage by the DC / DC converter. For this reason, in the present embodiment, step S107 is provided to supply the battery voltage directly to the drain terminal.

[0059] If the current battery voltage level is larger than the reference voltage V _M, the process proceeds to step S108, executes the V _DD control I. The V _DD control I In this embodiment, a control for supplying a reference voltage V _M to the drain terminal by a voltage control circuit using a DC / DC converter IC.

[0060] In step S104, if the output level is determined to be below the threshold level P _M (judgment result is N
In O), the process proceeds to step S109, and the V _DD control II is executed. This V _DD control II is a high-frequency power amplifier circuit 411
DC / DC converter IC based on the V _DD table according to the battery voltage so as not to deteriorate the characteristic of output modulation distortion of
A control for gradually lowering the drain voltage below the reference voltage V _M by the voltage control circuit using.

If it is determined in step S102 that the mode is the mode B, the voltage drop of the voltage control circuit using the DC / DC converter IC caused by the load current of the high-frequency power amplifier circuit does not matter. Therefore, the process proceeds to step S110, and the voltage corresponding to the battery voltage is adjusted so that the characteristic of the output modulation distortion of the high-frequency power amplifier circuit is not deteriorated.
_{Based on the DD} table, control by a voltage control circuit using a DC / DC converter IC (V _DD control III) is performed.

As described above, in the mode in which the required maximum output voltage is the highest, the voltage drop by the power supply voltage control circuit is large due to the drain current of the high frequency power amplifier circuit, and the power level is higher than the level at which the desired drain voltage cannot be supplied to the drain terminal. Therefore, the drain control by the DC / DC converter is bypassed, and the drain control by the DC / DC converter is performed at other power levels, so that the optimum drain voltage can always be supplied to the high-frequency power amplifier circuit, and the power supply efficiency can be improved. It is also possible to control gain and output modulation distortion.

FIG. 11 is a block diagram of a transmission power control apparatus according to the seventh embodiment of the present invention. This transmission power control device includes a high-frequency power amplifier 711 that amplifies the power of a high-frequency signal, a transmission control circuit 712 and a _VGG table 713 that control a gate voltage V _GG , a drain voltage V _DD
Control circuit 716 for controlling the RF power amplifier 7
And a detection circuit 720 for detecting the 11 output signals.
The transmission control circuit 712 reads out the optimum V _GG value from the V _GG table 713 according to the control signal A. However, in this embodiment, the transmission control circuit 712 does not include the V _DD table, and the transmission control circuit 716 determines the battery voltage as described later. The VDD value is determined based on the battery voltage monitor signal as information. Transmission control circuit 716
Includes a voltage controller such as a DC / DC converter or a linear regulator with high conversion efficiency.

In the detection circuit 720, another diode 722 is connected to the anode terminal of the diode 721 for outputting a detection signal, and the bias voltage Vbi is connected to the anode terminal.
as is applied. When the signal level monitored by the high frequency power amplifier circuit 711 exceeds a certain diode forward voltage, the output signal of the high frequency power amplifier circuit 711 (the monitor signal by the detection circuit 720) is linearly half-wave rectified,
The detected voltage is integrated by an RC filter 723 provided on the cathode side of the diode 721 to generate a detection voltage. The detection operating point of the monitor signal can be changed by the bias voltage Vbias. Therefore, when the output signal level of the high-frequency power amplifier circuit 711 does not exceed a certain diode forward voltage, the detection voltage becomes approximately a fixed voltage.

When the drain voltage V _DD of the high-frequency power amplifier 711 is reduced to a certain voltage or lower, the operation of the high-frequency power amplifier 711 becomes unstable. For this reason, the value of the minimum drain voltage V _{DD is} naturally determined, and the drain voltage is not controlled to be equal to or lower than the output level of the high-frequency power amplifier circuit 711 even when the output level is low.

With these characteristics, the bias voltage Vbias
Is determined properly, an external control signal (FIG. 1,
The power supply efficiency can be improved by autonomously controlling the drain voltage with the detection voltage without the need for the control signal B) and the V _DD table in FIG.

As described above, according to the embodiment of the present invention, the drain voltage of the high-frequency power amplifier circuit is determined based on the V _DD table stored in a memory or the like in advance or according to the output level of the high-frequency power amplifier circuit. By autonomous control, the output modulation distortion of the high-frequency power amplifier circuit is controlled within the range that can satisfy the adjacent channel leakage power standard of the mobile communication system, and the gain of the high-frequency power amplifier circuit is determined based on the _VGG table. Is controlled so as to change linearly, and the high-frequency power amplifier circuit is used as a variable level circuit, whereby the power supply efficiency can be improved and the device configuration can be simplified. .

[0068]

According to the present invention, optimal power supply efficiency can be achieved even when the transmission rate or the like is different, or the transmission power or battery voltage fluctuates.

[Brief description of the drawings]

FIG. 1 is a block configuration diagram of a transmission power control device according to a first embodiment of the present invention.

FIG. 2 is a characteristic diagram for describing an operation of power control in a high-frequency power amplifier circuit.

FIG. 3 is a characteristic diagram for explaining an operation of power control in the high-frequency power amplifier circuit.

FIG. 4 is a block diagram of a transmission power control device according to a second embodiment of the present invention.

FIG. 5 is an output characteristic diagram of a transmission power control device according to a second embodiment.

FIG. 6 is a flowchart illustrating a control procedure of a transmission power control device according to a third embodiment of the present invention.

FIG. 7 is a flowchart illustrating a control procedure of a transmission power control device according to a fourth embodiment of the present invention.

8 is a configuration diagram of a voltage control circuit bypass portion provided in the transmission control circuit shown in FIG.

FIG. 9 is a flowchart showing a control procedure of a transmission power control device according to a fifth embodiment of the present invention.

FIG. 10 is a flowchart illustrating a control procedure of a transmission power control device according to a sixth embodiment of the present invention.

FIG. 11 is a block configuration diagram of a transmission power control device according to a seventh embodiment of the present invention.

FIG. 12 is a block diagram of a conventional transmission power control device.

[Explanation of symbols]

111, 411, 711 High frequency power amplifier circuit 112, 412, 712 Transmission control circuit 113, 413, 713 V _GG (V _BB ) table 116, 416, 716 Transmission control circuit 117, 417 V _DD (V _CC ) table 419 Variable level Circuit 420, 720 Detection circuit

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (reference) H04B 7/26 102 H04B 7/26 102 F term (reference) 5J091 AA01 AA41 CA04 CA36 FA01 HA02 HA10 HA19 HA25 HA29 HA38 KA00 KA18 KA55 SA14 TA01 TA02 TA07 5J092 AA01 AA41 CA04 CA36 FA01 GR04 HA02 HA10 HA19 HA25 HA29 HA38 KA00 KA18 KA55 SA14 TA01 TA02 TA07 5J100 AA16 AA26 BA01 BA10 CA00 CA02 CA30 DA06 EA02 FA01 5K060 CC04 DD04 HH06 GG08 JJ08

Claims (18)

[Claims] 1. A transmission power control method for a transmission power control device, wherein a high-frequency power amplification circuit includes a semiconductor amplification element whose source is grounded, wherein the semiconductor amplification element controls only a drain voltage and a gate voltage or only a drain voltage of the semiconductor amplification element. A transmission power control method characterized by linearly changing the gain of a high-frequency power amplifier circuit to control transmission power. 2. The device according to claim 1, wherein the drain voltage is controlled when the transmission output level of the high-frequency power amplifier circuit exceeds a predetermined level, and both the gate voltage and the drain voltage are controlled when the transmission output level is lower than the predetermined level. Transmission power control method characterized by the above-mentioned. 3. The transmission power control method according to claim 1, wherein the control value of the drain voltage and / or the control value of the gate voltage are read from table values prepared in advance. 4. The transmission power control method according to claim 1, wherein the control value of the drain voltage is determined according to a detected value of the battery voltage. 5. A transmission power control method for a transmission power control device, comprising: a high-frequency power amplification circuit having a source-grounded semiconductor amplification element and supplying a battery voltage to a drain terminal of the semiconductor amplification element. When the transmission output level is equal to or higher than the threshold level lower than the maximum output level and the battery voltage is equal to or lower than the reference level, the battery voltage is supplied to a drain terminal of the semiconductor amplifier, and the transmission output level is equal to or higher than the threshold level. And when the battery voltage exceeds the reference level, the battery voltage is reduced to the reference level and supplied to the drain terminal. 6. The transmission power control method according to claim 5, wherein the drain voltage is controlled when the transmission output level is lower than the reference level. . 7. When a plurality of mobile communication systems using different communication systems have different maximum output powers or when there are a plurality of modes having different maximum output powers, a maximum output power is provided. Wherein the transmission power control method according to claim 5 is applied only to a mobile communication system or mode having the highest value, and the transmission power control method according to claim 1 is applied to other mobile communication systems or modes. Transmission power control method to perform. 8. The semiconductor device according to claim 1, wherein the semiconductor amplifying element is not a field-effect transistor but a semiconductor element having a collector, an emitter, and a base. Wherein the base voltage is used instead of the gate voltage, and the emitter is grounded instead of the source ground. 9. A transmission power control device, wherein a high-frequency power amplifier circuit has a semiconductor amplifying element whose source is grounded, wherein the drain voltage and the gate voltage of the semiconductor amplifying element or only the drain voltage is controlled to control the high-frequency power amplifying circuit. A transmission power control device comprising transmission power control means for changing a gain linearly. 10. The apparatus according to claim 9, wherein a drain voltage is controlled when a transmission output level of the high-frequency power amplifier circuit exceeds a predetermined level, and both a gate voltage and a drain voltage are controlled when the transmission output level is lower than the predetermined level. A transmission power control device characterized by the above-mentioned. 11. The method according to claim 9, wherein
A transmission power control device, wherein a table for reading out a control value of a drain voltage and / or a control value of a gate voltage is stored in a memory in advance. 12. The transmission power control device according to claim 9, wherein the control value of the drain voltage is determined according to a detected value of the battery voltage. 13. A transmission power control device in which a high-frequency power amplifier circuit has a semiconductor amplifier element whose source is grounded and supplies a battery voltage to a drain terminal of the semiconductor amplifier element, wherein the transmission output level of the high-frequency power amplifier circuit is maximum. A switch for supplying the battery voltage to a drain terminal of the semiconductor amplifying element when the battery voltage is equal to or higher than a threshold level lower than an output level and the battery voltage is equal to or lower than a reference level, and the transmission output level is equal to or higher than the threshold level and A transmission power control device, comprising: voltage control means for lowering the battery voltage to the reference level and supplying the battery voltage to the drain terminal when the battery voltage exceeds the reference level. 14. The transmission power according to claim 13, further comprising means for controlling a drain voltage when the output level is lower than the reference level. Control device. 15. The maximum output power of the plurality of mobile communication systems, comprising the transmission power control device of claim 9 and the transmission power control device of claim 13, for a plurality of mobile communication systems using different communication systems. Or when there are a plurality of modes having different maximum output powers, the transmission power control device according to claim 13 is driven only for the mobile communication system or the mode having the highest maximum output, and the other mobile communication is performed. Claim 9 for system or mode
A transmission power control device for driving the transmission power control device. 16. The semiconductor device according to claim 9, wherein the semiconductor amplifying device is not a field effect transistor but a semiconductor device having a collector, an emitter, and a base. And a base voltage instead of the gate voltage, and a grounded emitter instead of the grounded source. 17. The detecting means according to claim 9, wherein said detecting means for detecting the transmission output level comprises: a detecting diode; and a bias means for applying a DC bias voltage to an anode of the detecting diode. The signal detected by the detection means is provided by APC (Automatic
A transmission power control device used for power control and drain voltage control. 18. A mobile radio station equipped with the transmission power control device according to claim 9. Description: