JP2002094121A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

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Publication number
JP2002094121A
JP2002094121A JP2000282990A JP2000282990A JP2002094121A JP 2002094121 A JP2002094121 A JP 2002094121A JP 2000282990 A JP2000282990 A JP 2000282990A JP 2000282990 A JP2000282990 A JP 2000282990A JP 2002094121 A JP2002094121 A JP 2002094121A
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Prior art keywords
light emitting
emitting element
emitting device
lead
element
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JP2000282990A
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Japanese (ja)
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Tamotsu Jitosho
保 地頭所
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Toshiba Corp
Toshiba Electronic Engineering Corp
東芝電子エンジニアリング株式会社
株式会社東芝
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device having a high ESD resistance without increasing or decreasing the junction capacitance of a light emitting element.
SOLUTION: The semiconductor light emitting device has an electric resistance element connected in parallel to a light emitting element to generate a desired leakage current. A first lead 2a is electrically connected at the top end to an n-electrode of the light emitting element 1, and a second lead 2b is electrically connected at the top end to a p-electrode of the light emitting element 1 through a wire 3 (e.g. gold wire). The light emitting element 1 is e.g. of NiGaAlP or GaN type. The electric resistance element 5 is connected between the leads 2 of the n- and p-electrodes in parallel to the emitting element 1. The resistance element 5 is set so that (the resistance Rz of a residual liquid) > (the resistance R of the resistance element 5). The emitting element 1, the wire 3, the resistance element 5 and the top ends of the leads 2 are sealed with an insulative thermosetting resin 4.
COPYRIGHT: (C)2002,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、半導体発光装置に関し、特に、静電破壊耐量の高い半導体発光装置に関するものである。 BACKGROUND OF THE INVENTION The present invention relates to a semiconductor light-emitting device, and more particularly, to a semiconductor light emitting device having high electrostatic breakdown resistance.

【0002】 [0002]

【従来の技術】図5は、一般的なInGaAlP系発光LED(発光素子)の断面図である。 BACKGROUND ART FIG. 5 is a cross-sectional view of a typical InGaAlP-based light emitting LED (light emitting element). この発光素子1 The light emitting element 1
は、n−GaAS基板11上に、n−InAlPクラッド層12、ノンドープInGaAlP活性層13、p− Has, on n-GaAS substrate 11, n-InAlP cladding layer 12, an undoped InGaAlP active layer 13, p-
InAlPクラッド層14、p−AlGaAs電流拡散層15、p−GaASコンタクト層16が有機金属化学気相成長法(MOCVD法)により順次積層された後、 After InAlP cladding layer 14, p-AlGaAs current diffusing layer 15, p-GaAS contact layer 16 are sequentially laminated by metal organic chemical vapor deposition (MOCVD),
AuGEから成るN電極17がn−GaAS基板11側に、AuZnから成るP電極18がp−GaASコンタクト層16側に蒸着法により形成されている。 N electrode 17 within n-GaAS substrate 11 side made of Auge, are formed by P-electrode 18 is an evaporation method in p-GaAS contact layer 16 side made of AuZn. そして、 And,
250(μm)角に分離され、ウェットエッチングにより側面が処理される。 Is separated into 250 ([mu] m) square, side is processed by wet etching.

【0003】図6は、従来における半導体発光装置の断面図である。 [0003] Figure 6 is a cross-sectional view of a semiconductor light-emitting device in the related art. 図5の発光素子1は、図6のように、発光素子1のN電極側に第1のリード2が電気的に接続され、発光素子1のP電極側にワイヤー3を介して第2のリード2が電気的に接続され、発光素子1、ワイヤー3 The light-emitting element 1 in FIG. 5, as in FIG. 6, the first lead 2 to N electrode side of the light emitting element 1 is electrically connected, the second to the P electrode of the light emitting element 1 via the wire 3 lead 2 are electrically connected, the light-emitting element 1, the wire 3
およびリード2の先端部が絶縁性熱硬化樹脂4により封止されている。 And the tip portion of the lead 2 is sealed by an insulating thermosetting resin 4.

【0004】 [0004]

【発明が解決しようとする課題】しかしながら、接合面が外部に露出している発光素子からなる半導体発光装置の静電破壊の原因の一つとして、発光素子の側面部での破壊がある。 [0007] However, as one of the causes of the electrostatic breakdown of the semiconductor light-emitting device comprising a light emitting element bonding surface is exposed to the outside, there is a fracture in the side surface portion of the light emitting element. 図7は、発光素子に残渣が付着している断面図である。 Figure 7 is a cross-sectional view residue is attached to the light emitting element. 図7(a)のように、PN接合が素子側面において外部に露出している発光素子は、素子製造工程においてダイシングによる素子分離工程や湿式の側面処理工程(ウェットエッチング)等を経るため、側面に残渣7が付着しやすい。 As shown in FIG. 7 (a), the light-emitting device PN junction is exposed to the outside in the element side, since through the isolation process or a wet side process by the dicing (wet etching) or the like in the element manufacturing process, side residue 7 is likely to adhere to. 発光素子1は、電荷を逆バイアス方向に印加されると空乏層が広がり、接合面には無バイアス時より大きな電界が発生する。 Light-emitting element 1, a depletion layer to be applied to the charge in the reverse bias direction spread, the bonding surface larger field than when no bias is generated. この時、図7(a) At this time, as shown in FIG. 7 (a)
のように、接合を短絡するように残渣7が付着していれば、残渣7自身または残渣7と発光素子1の界面に電荷が集中的に流れる。 As in, if residue 7 so as to short-circuit junction adheres charge at the interface of the light-emitting element 1 and the residue 7 itself or residue 7 flows intensively. そして、発生したジュール熱により残渣7の融解が起こることで、図7(b)のように、接合を完全に短絡してしまう。 Then, by the Joule heat generated melted residue 7 occurs, as shown in FIG. 7 (b), the short-circuited completely joined. このような発光素子が静電気放電を受けた場合、側面の残渣7に電流が集中する場合が多く、静電破壊を引き起こす可能性がある。 If such a light-emitting element is subjected to electrostatic discharge, there is a possibility that when the current to the residue 7 of the side surface is concentrated much, causing electrostatic breakdown.

【0005】図8は、半導体発光装置をテストするES [0005] Figure 8, ES for testing the semiconductor light emitting device
D(Electric Static Dischar D (Electric Static Dischar
ge)試験における回路図である。 ge) is a circuit diagram of the test. テストは、スイッチSW1をONしスイッチSW2をOFFすることにより、電源EtからコンデンサCtに電荷を貯め、スイッチSW1をOFFしスイッチSW2をONすることにより発光素子に逆バイアスの電流を流す。 Test, by turning OFF the switch SW2 is turned ON the switch SW1, accumulated charge on the capacitor Ct from the power source Et, flow reverse bias current to the light emitting element by turning ON and OFF by the switch SW2 and the switch SW1. 発光素子に残渣がある場合、図8のように、発光素子と並列に抵抗Rz If the light emitting element is residue, as in FIG. 8, the resistor Rz in parallel with the light emitting element
が接続されているのと同じになる。 There is the same as being connected. したがって、発光素子に逆バイアスの電流を流した場合、抵抗Rtを流れる電流は、発光素子と抵抗Rzに分散されてしまう。 Accordingly, in passing the reverse bias current to the light emitting element, current flowing through the resistor Rt is thus dispersed in the light-emitting element resistance Rz. すなわち、抵抗Rzを流れる電流はリーク電流となり、静電破壊を引き起こし、発光素子が十分に機能しなくなってしまう。 That is, the current flowing through the resistor Rz becomes leakage current causes electrostatic destruction, the light-emitting element can no longer sufficiently function.

【0006】これに対して、側面に付着した残渣によるリーク電流の発生を抑制させるためには、接合容量を増加させる方法や側面を清浄に保つ等の方法がある。 [0006] On the contrary, in order to suppress generation of leakage current due to residues adhering to the side surface, there is a method equal to keep methods and aspects of increasing the junction capacitance clean. また、側面に限らず、結晶内部に欠陥等があれば、そこに電流が集中し、静電破壊に至る場合がある。 Further, not only the side surface, if there is a defect or the like inside the crystal, which current is concentrated, which may result in ESD damage. この場合も、接合容量を増加することが有効である。 In this case, it is effective to increase the junction capacitance.

【0007】しかしながら、接合容量の増減は、活性層キャリア濃度や厚さで調節するが、これらは発光特性や信頼性に関わるパラメータであり、発光効率等とのトレードオフになり、変動可能な幅は自ずと制限される。 However, changes in the junction capacitance is adjusted with the active layer a carrier density and thickness, these are parameters relating to light emission characteristics and reliability, a tradeoff between the light-emitting efficiency and the like, variability width It is naturally limited. また、側面を清浄に保つことは、素子化工程で用いる薬品や材料は多品種におよぶため、これらの代替品を選定し、残渣対策を行うことは困難である。 Also, keeping the sides clean, the chemicals and materials used in device fabrication process for spanning many kinds, selected these alternatives, it is difficult to perform a residue measures.

【0008】本発明の目的は、発光素子の接合容量を増減することなく、半導体発光装置のESD耐量を向上させることである。 An object of the present invention, without increasing or decreasing the junction capacitance of the light emitting element is to improve the ESD tolerance of the semiconductor light-emitting device.

【0009】 [0009]

【課題を解決するための手段】この発明による半導体発光装置は、発光素子と、前記発光素子の一方の面に先端部が電気的に接続された第1のリードと、前記発光素子の他方の面に先端部が電気的に接続された第2のリードと、前記第1のリードと第2のリード間に接続された、 The semiconductor light emitting device according SUMMARY for the this invention, a light emitting element, a first lead of one surface to the tip portion of the light-emitting element is electrically connected, the other of said light emitting element a second lead tip is electrically connected to the surface, connected between said first lead and the second lead,
あるいは、前記発光素子と並列に接続された電気抵抗素子とを備えることを特徴としている。 Alternatively, it is characterized in that it comprises an electrical resistance element connected in parallel with the light emitting element.

【0010】また、この発明による半導体発光装置は、 Further, the semiconductor light-emitting device according to the invention,
発光素子と、前記発光素子の一方の面に先端部が電気的に接続された第1のリードと、前記発光素子の他方の面に先端部が電気的に接続された第2のリードと、前記第1および第2のリードに跨って形成された導電性熱硬化樹脂とを備えることを特徴としている。 A light emitting element, a first lead tip portion is electrically connected to one surface of the light emitting element, and a second lead tip is electrically connected to the other surface of the light emitting element, It is characterized in that it comprises a conductive thermoset resin formed across the first and second leads.

【0011】また、この発明による半導体発光装置は、 Further, the semiconductor light-emitting device according to the invention,
発光素子と、前記発光素子の一方の面に先端部が電気的に接続された第1のリードと、前記発光素子の他方の面に先端部が電気的に接続された第2のリードと、前記発光素子および前記リードの先端部のうち、少なくとも前記発光素子を覆う導電性熱硬化樹脂とを備えることを特徴としている。 A light emitting element, a first lead tip portion is electrically connected to one surface of the light emitting element, and a second lead tip is electrically connected to the other surface of the light emitting element, of the tip portion of the light emitting element and the lead is characterized in that it comprises a conductive thermosetting resin covering at least the light emitting element.

【0012】 [0012]

【発明の実施の形態】以下、図面を参照しながら本発明の実施の形態(以下、実施形態という)について説明する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention with reference to the drawings (hereinafter, referred to as embodiments) will be described. 尚、各図において、同一構成部分には同一符号を付す。 In the drawings, the same numerals are assigned to the same components. (第1の実施形態)第1の実施形態における半導体発光装置は、発光素子と並列に所望の漏れ電流が発生するような電気抵抗素子を接続させている。 The semiconductor light-emitting device in First Embodiment The first embodiment, a desired leakage current in parallel with the light emitting element is to connect the electrical resistance element as generated.

【0013】図1に、本発明の第1の実施形態における半導体発光装置の断面図を示す。 [0013] FIG 1 shows a cross-sectional view of a semiconductor light emitting device according to a first embodiment of the present invention. 発光素子1のN電極側に第1のリード2aの先端部が電気的に接続され、発光素子1のP電極側にワイヤー3(例えば、金ワイヤー) Tip of the first lead 2a are electrically connected to the N electrode of the light emitting element 1, the light emitting element 1 of the P-electrode side to the wire 3 (e.g., gold wire)
を介して第2のリード2bの先端部が電気的に接続されている。 Distal end of the second lead 2b are electrically connected through. 例えば、発光素子1は、InGaAlP系またはGaN系である。 For example, the light emitting element 1 is a InGaAlP-based or GaN-based. また、N電極およびP電極のリード2間に、すなわち、発光素子1と並列に電気抵抗素子5 Further, between the leads 2 of the N-electrode and the P-electrode, i.e., electric resistance element 5 in parallel with the light emitting element 1
(抵抗R)が接続されている。 (Resistor R) is connected. そして、ここでは発光素子1、ワイヤー3、電気抵抗素子5およびリード2の先端部が絶縁性熱硬化樹脂4により封止されている。 And here the light-emitting element 1, the wire 3, the tip portion of the electric resistance element 5 and the lead 2 are sealed by insulating thermosetting resin 4.

【0014】図2は、半導体発光装置をテストするES [0014] Figure 2, ES for testing the semiconductor light emitting device
D試験における回路図である。 It is a circuit diagram in D test. 発光素子に残渣がある場合、半導体発光装置は発光素子と並列に抵抗Rzが接続されているのと同じになり、さらに、本発明の半導体発光装置の場合、図2のように、発光素子および抵抗Rz If the light emitting element is residue, the semiconductor light-emitting device is the same as the resistor Rz in parallel with the light emitting element is connected, further, when the semiconductor light-emitting device of the present invention, as shown in FIG. 2, the light emitting element and resistance Rz
と並列に抵抗R(電気抵抗素子5)が接続されているのと同じになる。 Parallel to the resistor R (electric resistance element 5) is the same as what is connected to. 抵抗Rは、抵抗Rz、すなわち、残渣に電流が多く流れないようにするために接続されている。 Resistance R is the resistance Rz, i.e., are connected to so does not flow much current to the residue.
したがって、抵抗Rzに流れる電流I RZ 、抵抗Rに流れる電流I Rとすると、I RZ <I Rとなるように、つまり、 Therefore, the current flowing through the resistor Rz I RZ, when the current I R flowing through the resistor R, so that I RZ <I R, that is,
Rz>Rとなるように設定されている。 It is set in such a way that Rz> R. 例えば、6 For example, 6
(v)を印加した場合、抵抗Rには0.3(μA)の電流が流れるように設定する。 (V) when applying, the resistor R is set to flow a current of 0.3 (.mu.A).

【0015】テストは、スイッチSW1をONしスイッチSW2をOFFすることにより、電源EtからコンデンサCtに電荷を貯め、スイッチSW1をOFFしスイッチSW2をONすることにより発光素子に逆バイアスの電流を流す。 [0015] Test, by turning OFF the switch SW2 is turned ON the switch SW1, accumulated charge on the capacitor Ct from the power source Et, flow reverse bias current to the light emitting element by turning ON and OFF by the switch SW2 switches SW1 . 図2のESD試験における回路では、発光素子に逆バイアスの電流を流した場合、抵抗Rtを流れる電流は、発光素子と抵抗Rzと抵抗Rに分散される。 In the circuit in an ESD test 2, in passing the reverse bias current to the light emitting element, current flowing through the resistor Rt is dispersed and the light emitting element and the resistor Rz resistor R. しかし、抵抗Rzと抵抗Rの関係はRz>Rであるので、抵抗Rzにはほとんど電流が流れないように制御されている。 However, since the relationship between the resistance Rz resistor R is Rz> R, are controlled so that almost no current flows through the resistor Rz.

【0016】本発明における第1の実施形態の半導体発光装置は、あらかじめ発光素子と並列に電気抵抗素子5 [0016] The semiconductor light emitting device of the first embodiment of the present invention, the electric resistance element 5 in parallel to the advance light emitting element
が接続されているため、印加された電荷は一部、電気抵抗素子5を通過して外部に放出される。 There because it is connected, electric charge applied part, is emitted to the outside through the electrical resistance element 5. たとえ発光素子の側面に残渣等が付着していても、電気抵抗素子5により、接合面に高電界は発生しないので、残渣にはほとんど電流が流れず、残渣の融解は起こらない。 Even if they adhere sides residues and the like of the light emitting element, the electric resistance element 5, since no high electric field is generated in the bonding surface, the residue is current hardly flows in the melting of the residue does not occur. したがって、発光素子の接合を完全に短絡させてしまうことがなくなるので、半導体素子へのダメージを減らすことができ、静電耐量の高い半導体発光装置ができる。 Accordingly, since it is unnecessary to become completely short the junction of the light emitting element, it is possible to reduce the damage to the semiconductor element, it is high the semiconductor light emitting device electrostatic withstand.

【0017】また、電気抵抗素子5に流す漏れ電流の設定、すなわち、電気抵抗素子5の抵抗値の設定については、半導体発光装置の特性が損なわれない範囲で増やせば、ESD耐圧は上昇する。 Further, setting of the leakage current flowing to the electric resistance element 5, i.e., for setting the resistance value of the electric resistance element 5, by increasing the extent that the characteristics of the semiconductor light-emitting device is not compromised, ESD withstand voltage is increased. (第2の実施形態)次に、第2の実施形態の半導体発光装置について説明する。 (Second Embodiment) Next, a description will be given of a semiconductor light-emitting device of the second embodiment. 第2の実施形態における半導体発光装置は、発光素子を保護する樹脂の一部を導電性熱硬化樹脂にすることで、あらかじめ電流のリーク用パスを設けている。 The semiconductor light emitting device in the second embodiment, a portion of the resin to protect the light emitting element by the conductive thermosetting resins, are provided for leakage paths in advance current. 図3に、本発明の第2の実施形態における半導体発光装置の断面図を示す。 Figure 3 shows a cross-sectional view of a semiconductor light emitting device according to a second embodiment of the present invention.

【0018】発光素子1のN電極側に第1のリード2a The first lead 2a in N electrode side of the light emitting element 1
の先端部が電気的に接続され、発光素子1のP電極側にワイヤー3(例えば、金ワイヤー)を介して第2のリード2bの先端部が電気的に接続されている。 The tip portion are electrically connected, the wire 3 to the P electrode of the light emitting element 1 (for example, gold wire) distal end of the second lead 2b via are electrically connected. 例えば、発光素子1は、InGaAlP系またはGaN系である。 For example, the light emitting element 1 is a InGaAlP-based or GaN-based.
そして、第1および第2のリード2間に跨って導電性熱硬化樹脂6が形成されている。 Then, conductive thermosetting resin 6 over between 2 first and second leads are formed. さらに、この導電性熱硬化樹脂6上方の発光素子1、ワイヤー3およびリード2 Further, the conductive thermosetting resin 6 over the light-emitting element 1, the wire 3 and the lead 2
の先端部が絶縁性熱硬化樹脂4で覆われている。 Tip of the is covered by an insulating thermosetting resin 4. この絶縁性熱硬化樹脂4は、前記導電性熱硬化樹脂6に接して設けられている。 The insulative thermosetting resin 4 is disposed in contact with the conductive thermosetting resin 6.

【0019】本発明の第2の実施形態における半導体発光装置においても、半導体発光装置をテストするESD [0019] Also in the semiconductor light-emitting device according to a second embodiment of the present invention, ESD testing semiconductor light-emitting device
試験における回路図は、図2と同様になる。 Circuit diagram of the test will similarly to FIG. 第2の実施形態の半導体発光装置の場合も、図2のように、発光素子および抵抗Rzと並列に抵抗R(導電性熱硬化樹脂6)が接続されているのと同じになる。 In the case of the semiconductor light-emitting device of the second embodiment, as shown in FIG. 2, the same as the light emitting element and the resistor Rz in parallel with the resistor R (conductive thermosetting resin 6) is connected. 抵抗Rは、抵抗Rz、すなわち、残渣に電流が多く流れないようにするために接続されている。 Resistance R is the resistance Rz, i.e., are connected to so does not flow much current to the residue. 抵抗Rzに流れる電流I RZ 、抵抗Rに流れる電流I Rとすると、I RZ <I Rとなるように、つまり、Rz>Rとなるように設定されている。 Current I RZ flowing through the resistor Rz, when the current I R flowing through the resistor R, <so that the I R, that is, Rz> I RZ is set to be R. 例えば、6(v)を印加した場合、抵抗Rには0.3(μ For example, when applying the 6 (v), the resistor R 0.3 (mu
A)の電流が流れるように設定する。 Set so that the current of A) flows. したがって、導電性熱硬化樹脂6は、(残渣の抵抗)>(導電性熱硬化樹脂6の抵抗)となるような導電率のものを選べばよい。 Thus, conductive thermosetting resin 6 may be selected those (residues resistor)> (resistance of the conductive thermosetting resin 6) and a like conductivity.

【0020】本発明における第2の実施形態の半導体発光装置は、第1および第2のリード2間が導電性熱硬化樹脂6で封止されているため、印加された電荷は一部、 The semiconductor light emitting device of the second embodiment of the present invention, since during the first and second lead 2 are sealed with a conductive thermosetting resin 6, the electric charge applied partially,
導電性熱硬化樹脂6を通過して外部に放出される。 Passes through the conductive thermosetting resin 6 is discharged to the outside. たとえ発光素子1の側面に残渣等が付着していても、導電性熱硬化樹脂6に電流が流れ、残渣にはほとんど電流が流れないので、接合面に高電界は発生せず、残渣の融解は起こらない。 Even if they adhere sides residues and the like of the light emitting element 1, a current flows through the conductive thermosetting resin 6, almost no current flows to the residue, a high electric field is not generated on the bonding surface, the residue of the melting It does not occur. したがって、発光素子の接合を完全に短絡させてしまうことがなくなるので、発光素子へのダメージを減らすことができ、静電耐量の高い半導体発光装置ができる。 Accordingly, since it is unnecessary to become completely short the junction of the light emitting element, it is possible to reduce damage to the light emitting element, it is high the semiconductor light emitting device electrostatic withstand.

【0021】また、導電性熱硬化樹脂6の導電率の設定については、半導体発光装置の特性が損なわれない範囲で増やせば、ESD耐圧は上昇する。 Further, the setting of the conductivity of the conductive thermoset resin 6, by increasing the extent that the characteristics of the semiconductor light-emitting device is not compromised, ESD withstand voltage is increased. (第3の実施形態)次に、第3の実施形態の半導体発光装置について説明する。 (Third Embodiment) Next, a description will be given of a semiconductor light-emitting device of the third embodiment. 第3の実施形態における半導体発光装置は、発光素子を保護する樹脂を導電性熱硬化樹脂にすることで、あらかじめ電流のリーク用パスを設けている。 The semiconductor light emitting device in the third embodiment, the resin to protect the light emitting element by the conductive thermosetting resins, are provided for leakage paths in advance current. 図4に、本発明の第3の実施形態における半導体発光装置の断面図を示す。 Figure 4 shows a cross-sectional view of a semiconductor light emitting device according to a third embodiment of the present invention.

【0022】発光素子1のN電極側に第1のリード2a The first lead 2a in N electrode side of the light emitting element 1
の先端部が電気的に接続され、発光素子1のP電極側にワイヤー3(例えば、金ワイヤー)を介して第2のリード2bの先端部が電気的に接続されている。 The tip portion are electrically connected, the wire 3 to the P electrode of the light emitting element 1 (for example, gold wire) distal end of the second lead 2b via are electrically connected. 例えば、発光素子1は、InGaAlP系またはGaN系である。 For example, the light emitting element 1 is a InGaAlP-based or GaN-based.
そして、発光素子1、ワイヤー3およびリード2の先端部が導電性熱硬化樹脂6により封止されている。 Then, is sealed by the light-emitting element 1, the wire 3 and the conductive thermosetting resin 6 is the tip portion of the lead 2.

【0023】本発明の第3の実施形態における半導体発光装置においても、半導体発光装置をテストするESD [0023] Also in the semiconductor light-emitting device according to a third embodiment of the present invention, ESD testing semiconductor light-emitting device
試験における回路図は、図2と同様になる。 Circuit diagram of the test will similarly to FIG. 第3の実施形態の半導体発光装置の場合も、図2のように、発光素子および抵抗Rzと並列に抵抗R(導電性熱硬化樹脂6)が接続されているのと同じになる。 In the case of the semiconductor light-emitting device of the third embodiment, as shown in FIG. 2, the same as the light emitting element and the resistor Rz in parallel with the resistor R (conductive thermosetting resin 6) is connected. 抵抗Rは、抵抗Rz、すなわち、残渣に電流が多く流れないようにするために接続されている。 Resistance R is the resistance Rz, i.e., are connected to so does not flow much current to the residue. 抵抗Rzに流れる電流I RZ 、抵抗Rに流れる電流I Rとすると、I RZ <I Rとなるように、つまり、Rz>Rとなるように設定されている。 Current I RZ flowing through the resistor Rz, when the current I R flowing through the resistor R, <so that the I R, that is, Rz> I RZ is set to be R. 例えば、6(v)を印加した場合、抵抗Rには0.3(μ For example, when applying the 6 (v), the resistor R 0.3 (mu
A)の電流が流れるように設定する。 Set so that the current of A) flows. したがって、導電性熱硬化樹脂6は、(残渣の抵抗)>(導電性熱硬化樹脂6の抵抗)となるよう導電率のものを選べばよい。 Thus, conductive thermosetting resin 6 (residues resistor)> may be selected those (conductive thermal resistance of the cured resin 6) so as conductivity.

【0024】本発明における第3の実施形態の半導体発光装置は、発光素子1、ワイヤー3およびリード2の先端部が導電性熱硬化樹脂6で封止されているため、印加された電荷は一部、導電性熱硬化樹脂6を通過して外部に放出される。 The semiconductor light emitting device of the third embodiment of the present invention, the light-emitting element 1, since the tip of the wire 3 and the lead 2 is sealed with a conductive thermosetting resin 6, the electric charge applied one parts, through the conductive thermosetting resin 6 is discharged to the outside. たとえ発光素子の側面に残渣等が付着していても、導電性熱硬化樹脂6に電流が流れ、残渣にはほとんど電流が流れないので、接合面に高電界は発生せず、残渣の融解は起こらない。 Even if they adhere sides residues and the like of the light emitting element, current flows through the conductive thermosetting resin 6, the residue almost no current flows through the high electric field on the bonding surface is not generated, the melting of the residue It does not occur. したがって、発光素子1 Accordingly, the light emitting element 1
の接合を完全に短絡させてしまうことがなくなるので、 Since completely short the junction causes it disappears,
発光素子へのダメージを減らすことができ、静電耐量の高い半導体発光装置ができる。 Can reduce the damage to the light emitting element, it is high the semiconductor light emitting device electrostatic withstand.

【0025】また、導電性熱硬化樹脂6の導電率の設定については、半導体発光装置の特性が損なわれない範囲で増やせば、ESD耐圧は上昇する。 Further, the setting of the conductivity of the conductive thermoset resin 6, by increasing the extent that the characteristics of the semiconductor light-emitting device is not compromised, ESD withstand voltage is increased.

【0026】このように、あらかじめ電流のリーク用パスを設けることにより、電荷の放電を受けた場合に、その逃げ道を作ることになり、発光素子へのダメージを減じることができ、ESD耐量の高い半導体発光装置となる。 [0026] Thus, by providing the leaking path of advance current, when receiving a discharge of charge, will be making its way out, it is possible to reduce damage to the light emitting element, a high ESD immunity a semiconductor light-emitting device.

【0027】尚、第3の実施形態の半導体発光装置では、発光素子1、ワイヤー3およびリード2の先端部が導電性熱硬化樹脂6により覆われているが、少なくとも発光素子1を絶縁性熱硬化樹脂で覆ってもよい。 [0027] In the semiconductor light-emitting device of the third embodiment, the light-emitting element 1, the distal end portion of the wire 3 and the lead 2 are covered by the conductive thermosetting resin 6, at least a light-emitting element 1 insulating thermally it may be covered with a hardening resin. あるいは、少なくとも発光素子1を導電性熱硬化樹脂で覆い、 Alternatively, at least covering the light emitting element 1 with a conductive thermosetting resin,
ワイヤー3、リード2の先端部および導電性熱硬化樹脂を絶縁性熱硬化樹脂で覆ってもよい。 Wire 3, the tip and the conductive thermosetting resin leads 2 may be covered with an insulating thermosetting resin.

【0028】その他、この発明の要旨を変えない範囲において、種々変形実施可能なことは勿論である。 [0028] Other, within a scope not changing the gist of the present invention, various modifications may be implemented as a matter of course.

【0029】 [0029]

【発明の効果】あらかじめ電流のリーク用パスを設けることにより、たとえ発光素子の側面に残渣等が付着していても、発光素子に並列に接続された電気抵抗素子または導電性熱硬化樹脂に電流が流れ、残渣にはほとんど電流が流れない。 By providing, according to the present invention previously current leaking path, even though residues and the like on the side surface of the light emitting element is attached, the current to the connected electrical resistance elements or conductive thermosetting resin in parallel with the light emitting element flow, almost no current flows through the residue. 接合面に高電界は発生せず、残渣の融解は起こらない。 A high electric field on the bonding surface is not generated, the melting of the residue does not occur. 発光素子の接合を完全に短絡させてしまうことがなくなる。 It is eliminated altogether short the junction of the light emitting element. したがって、発光素子へのダメージを減らすことができ、静電耐量の高い半導体発光装置ができる。 Therefore, it is possible to reduce damage to the light emitting element, it is high the semiconductor light emitting device electrostatic withstand.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の第1の実施形態における半導体発光装置の断面図。 Sectional view of a semiconductor light emitting device according to a first embodiment of the present invention; FIG.

【図2】半導体発光装置をテストするESD試験における回路図。 Figure 2 is a circuit diagram of ESD test for testing the semiconductor light emitting device.

【図3】本発明の第2の実施形態における半導体発光装置の断面図。 Sectional view of a semiconductor light emitting device according to a second embodiment of the present invention; FIG.

【図4】本発明の第3の実施形態における半導体発光装置の断面図。 Sectional view of a semiconductor light emitting device according to a third embodiment of the present invention; FIG.

【図5】一般的なInGaAlP系発光LED(発光素子)の断面図 FIG. 5 is a cross-sectional view of a typical InGaAlP-based light emitting LED (light emitting element)

【図6】従来における半導体発光装置の断面図。 6 is a cross-sectional view of a semiconductor light-emitting device in the related art.

【図7】発光素子に残渣が付着している断面図。 7 is a cross-sectional view residue is attached to the light emitting element.

【図8】半導体発光装置をテストするESD試験における回路図。 Figure 8 is a circuit diagram of ESD test for testing the semiconductor light emitting device.

【符号の説明】 DESCRIPTION OF SYMBOLS

1…発光素子 2…リード 3…ワイヤー 4…絶縁性熱硬化樹脂 5…電気抵抗素子 6…導電性熱硬化樹脂 7…残渣 1 ... light emitting element 2 ... lead 3 ... wire 4 ... insulative thermosetting resin 5 ... resistance element 6 ... conductive thermosetting resin 7 ... residue

Claims (9)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】発光素子と、 前記発光素子の一方の面に先端部が電気的に接続された第1のリードと、 前記発光素子の他方の面に先端部が電気的に接続された第2のリードと、 前記第1のリードと第2のリード間に接続された電気抵抗素子とを備えることを特徴とする半導体発光装置。 And 1. A light emitting device, first the a first lead tip on one surface of the light-emitting element is electrically connected, the distal end portion on the other surface of the light-emitting element is electrically connected and second lead, the semiconductor light emitting device characterized by comprising a first lead and electrical resistance element connected between the second lead.
  2. 【請求項2】発光素子と、 前記発光素子の一方の面に先端部が電気的に接続された第1のリードと、 前記発光素子の他方の面に先端部が電気的に接続された第2のリードと、 前記発光素子と並列に接続された電気抵抗素子とを備えることを特徴とする半導体発光装置。 2. A light emitting device, first the a first lead tip on one surface of the light-emitting element is electrically connected, the distal end portion on the other surface of the light-emitting element is electrically connected the semiconductor light-emitting device, characterized in that it comprises a second lead and an electrical resistance element connected in parallel with the light emitting element.
  3. 【請求項3】前記発光素子、前記電気抵抗素子および前記リードの先端部は、絶縁性熱硬化樹脂により覆われていることを特徴とする請求項1または2記載の半導体発光装置。 Wherein the light emitting element, the tip portion of the electric resistance element and the leads, the semiconductor light emitting device according to claim 1, wherein that it is covered with an insulating thermosetting resin.
  4. 【請求項4】発光素子と、 前記発光素子の一方の面に先端部が電気的に接続された第1のリードと、 前記発光素子の他方の面に先端部が電気的に接続された第2のリードと、 前記第1および第2のリードに跨って形成された導電性熱硬化樹脂とを備えることを特徴とする半導体発光装置。 4. A light emitting device, first the a first lead tip on one surface of the light-emitting element is electrically connected, the distal end portion on the other surface of the light-emitting element is electrically connected the semiconductor light-emitting device, characterized in that it comprises a second lead, and the formed across the first and second lead conductive thermosetting resin.
  5. 【請求項5】前記発光素子および前記リードの先端部のうち、少なくとも前記発光素子は絶縁性熱硬化樹脂により覆われていることを特徴とする請求項4記載の半導体発光装置。 5. Among the leading end portion of the light emitting element and the lead, at least the light emitting element is a semiconductor light emitting device according to claim 4, characterized in that it is covered with an insulating thermosetting resin.
  6. 【請求項6】前記導電性熱硬化樹脂は、前記絶縁性熱硬化樹脂の下方に配置され、且つ、前記絶縁性熱硬化樹脂と接して設けられていることを特徴とする請求項5記載の半導体発光装置。 Wherein said conductive thermoset resins, wherein arranged below the insulating thermosetting resins, and the according to claim 5, characterized in that provided in contact with the insulating thermosetting resins semiconductor light-emitting device.
  7. 【請求項7】前記導電性熱硬化樹脂は、前記絶縁性熱硬化樹脂により覆われていることを特徴とする請求項5記載の半導体発光装置。 Wherein said conductive thermoset resins, semiconductor light-emitting device according to claim 5, characterized in that it is covered with the insulating thermosetting resin.
  8. 【請求項8】発光素子と、 前記発光素子の一方の面に先端部が電気的に接続された第1のリードと、 前記発光素子の他方の面に先端部が電気的に接続された第2のリードと、 前記発光素子および前記リードの先端部のうち、少なくとも前記発光素子を被覆する導電性熱硬化樹脂とを備えることを特徴とする半導体発光装置。 8. A light emitting device, first the a first lead tip on one surface of the light-emitting element is electrically connected, the distal end portion on the other surface of the light-emitting element is electrically connected and second lead out of the tip of the light emitting element and the lead, the semiconductor light emitting device characterized by comprising a conductive thermosetting resin that covers at least the light emitting element.
  9. 【請求項9】前記導電性熱硬化樹脂および前記リードの先端部は、絶縁性熱硬化樹脂により覆われていることを特徴とする請求項8記載の半導体発光装置。 Tip of claim 9 wherein said conductive thermosetting resin and the leads, the semiconductor light emitting device according to claim 8, characterized in that it is covered with an insulating thermosetting resin.
JP2000282990A 2000-09-19 2000-09-19 Semiconductor light emitting device Pending JP2002094121A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005122292A1 (en) * 2004-06-10 2005-12-22 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device
JP2009516931A (en) * 2005-11-22 2009-04-23 ショッキング テクノロジーズ インコーポレイテッドShocking Technologies, Inc. Emitting device using a voltage-sensitive state transitions dielectric material
EP1750309A3 (en) * 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
KR100964370B1 (en) 2008-04-10 2010-06-25 조인셋 주식회사 Led chip package having protection device for instant high-voltage
JP2011222574A (en) * 2010-04-05 2011-11-04 Stanley Electric Co Ltd Light-emitting device and manufacturing method for the same
US9607970B2 (en) 2009-11-13 2017-03-28 Sharp Kabushiki Kaisha Light-emitting device having a plurality of concentric light transmitting areas
US9679942B2 (en) 2010-01-22 2017-06-13 Sharp Kabushiki Kaisha Light emitting device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005122292A1 (en) * 2004-06-10 2005-12-22 Epivalley Co., Ltd. Iii-nitride semiconductor light emitting device
EP1750309A3 (en) * 2005-08-03 2009-07-29 Samsung Electro-mechanics Co., Ltd Light emitting device having protection element
JP2009516931A (en) * 2005-11-22 2009-04-23 ショッキング テクノロジーズ インコーポレイテッドShocking Technologies, Inc. Emitting device using a voltage-sensitive state transitions dielectric material
KR100964370B1 (en) 2008-04-10 2010-06-25 조인셋 주식회사 Led chip package having protection device for instant high-voltage
US9607970B2 (en) 2009-11-13 2017-03-28 Sharp Kabushiki Kaisha Light-emitting device having a plurality of concentric light transmitting areas
US9679942B2 (en) 2010-01-22 2017-06-13 Sharp Kabushiki Kaisha Light emitting device
US9966367B2 (en) 2010-01-22 2018-05-08 Sharp Kabushiki Kaisha Light emitting device
JP2011222574A (en) * 2010-04-05 2011-11-04 Stanley Electric Co Ltd Light-emitting device and manufacturing method for the same

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