JP2002032035A - El display device and its inspecting method - Google Patents

El display device and its inspecting method

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Publication number
JP2002032035A
JP2002032035A JP2001140333A JP2001140333A JP2002032035A JP 2002032035 A JP2002032035 A JP 2002032035A JP 2001140333 A JP2001140333 A JP 2001140333A JP 2001140333 A JP2001140333 A JP 2001140333A JP 2002032035 A JP2002032035 A JP 2002032035A
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Japan
Prior art keywords
display device
el display
el
plurality
power supply
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JP2001140333A
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JP2002032035A5 (en
JP5041627B2 (en
Inventor
Jun Koyama
潤 小山
Original Assignee
Semiconductor Energy Lab Co Ltd
株式会社半導体エネルギー研究所
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Priority to JP2000140751 priority
Priority to JP2000-140751 priority
Application filed by Semiconductor Energy Lab Co Ltd, 株式会社半導体エネルギー研究所 filed Critical Semiconductor Energy Lab Co Ltd
Priority to JP2001140333A priority patent/JP5041627B2/en
Publication of JP2002032035A publication Critical patent/JP2002032035A/en
Publication of JP2002032035A5 publication Critical patent/JP2002032035A5/ja
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Abstract

PROBLEM TO BE SOLVED: To reduce manufacturing cost by confirming the operation of a TFT substrate before forming the film of EL(electroluminescence) material in an active matrix type EL display device to enhance the rate of non-defective products of final products. SOLUTION: In this display device, whether the TFT for drive is operates normally or not is judged by providing a capacitance for inspection which is connected to the drain region of the TFT for drive of a pixel part and by confirming the charge and discharge of the capacitance for inspection. As a result, it is possible to eliminate defective products before the film formation of the EL material and, thus, manufacturing cost can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an electronic display (electro-optical device) formed by forming an EL (electroluminescence) element on a substrate. In particular, the present invention relates to a display device using a semiconductor element (an element using a semiconductor thin film). Further, the present invention relates to an electronic device using the EL display device for a display portion. Further, the present invention relates to a method for inspecting an EL display device.

[0002] In this specification, an EL element refers to both an element utilizing light emission (fluorescence) from a singlet exciton and an element utilizing light emission (phosphorescence) from a triplet exciton. And

[0003]

2. Description of the Related Art In recent years, a technique for forming a thin film transistor (hereinafter, referred to as a TFT) on a substrate has been greatly advanced, and application development to an active matrix display device has been advanced. In particular, TFT using polysilicon film
Has higher field-effect mobility (also called mobility) than a TFT using a conventional amorphous silicon film,
High-speed operation is possible. Therefore, the control of the pixel, which has been conventionally performed by the drive circuit outside the substrate, can be performed by the drive circuit formed on the same substrate as the pixel.

Such an active matrix type display device has various advantages such as reduction of manufacturing cost, downsizing of the display device, increase in yield, and reduction of throughput by forming various circuits and elements on the same substrate. Is obtained.

Further, active matrix type EL display devices having an EL element as a self-luminous element have been actively researched. The EL display device is an organic EL display (OELD: Organic EL Display) or an organic light emitting diode (OLED: Organic Ligh).
t Emitting Diode).

[0006] The EL display device is of a self-luminous type unlike the liquid crystal display device. An EL element has a pair of electrodes (anode and cathode)
Although an EL layer is interposed therebetween, the EL layer usually has a laminated structure. A typical example is a laminated structure of “hole transport layer / light emitting layer / electron transport layer” proposed by Tang et al. Of Kodak Eastman Company. This structure has extremely high luminous efficiency, and almost all EL display devices currently under research and development adopt this structure.

In addition, a hole injection layer / hole transport layer / light-emitting layer / electron transport layer, or a hole injection layer / hole transport layer / light-emitting layer / electron transport layer / electron injection layer may be provided on the anode. A structure in which layers are sequentially stacked may be used. The light emitting layer may be doped with a fluorescent dye or the like.

In this specification, all layers provided between a cathode and an anode are collectively called an EL layer. Therefore, the above-described hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and the like are all included in the EL layer.

Then, a predetermined voltage is applied to the EL layer having the above structure from a pair of electrodes, whereby recombination of carriers occurs in the light emitting layer to emit light. Note that in this specification, emission of an EL element is referred to as driving of the EL element. In this specification, a light-emitting element including an anode, an EL layer, and a cathode is referred to as an EL element.

As a driving method of the EL display device, there is an analog driving method (analog driving). Analog driving of the EL display device will be described with reference to FIGS.

FIG. 10 shows a structure of a pixel portion of an analog drive EL display device. Gate signal lines (G1 to Gy) for inputting a selection signal from the gate signal line driving circuit are connected to a gate electrode of a switching TFT 1801 included in each pixel. The switching TF of each pixel
One of a source region and a drain region of T1801 is connected to a source signal line (also referred to as a data signal line) (S1 to Sx) for inputting an analog video signal, and the other is connected to a gate electrode of a driving TFT 1804 of each pixel and Each of the capacitors is connected to a capacitor 1808 included in the pixel.

One of a source region and a drain region of a driving TFT 1804 included in each pixel is connected to a power supply line (V1 to V1).
Vx), and the other is connected to the EL element 1806. The potential of the power supply lines (V1 to Vx) is called a power supply potential. The power supply lines (V1 to Vx) are connected to capacitors 1808 included in each pixel.

The EL element 1806 has an anode, a cathode, and an EL layer provided between the anode and the cathode. When the anode of the EL element 1806 is connected to the source region or the drain region of the driving TFT 1804, the EL element 180
The anode 6 is a pixel electrode, and the cathode is a counter electrode. Conversely, EL
When the cathode of the element 1806 is connected to the source region or the drain region of the driving TFT 1804, the EL element 1
An anode 806 is a counter electrode and a cathode is a pixel electrode.

In this specification, the potential of the counter electrode is called a counter potential. Note that a power supply that applies a counter potential to the counter electrode is referred to as a counter power supply. The potential difference between the potential of the pixel electrode and the potential of the counter electrode is the EL drive voltage.
Hang on layers.

FIG. 11 shows a timing chart when the EL display device shown in FIG. 10 is driven in an analog system. A period from when one gate signal line is selected to when another gate signal line is selected next is called one line period (L). The period from the display of one image to the display of the next image corresponds to one frame period (F). In the case of the EL display device in FIG. 10, since there are y gate signal lines, y line periods (L1 to Ly) are provided in one frame period.

As the resolution increases, the number of line periods in one frame period increases, and the driving circuit must be driven at a high frequency.

First, the power supply lines (V1 to Vx) are maintained at a constant power supply potential. The counter potential, which is the potential of the counter electrode, is also kept at a constant potential. The opposing potential is EL
There is a potential difference between the element 1806 and the power supply potential to the extent that the element 1806 emits light.

In the first line period (L1), a selection signal from the gate signal line driving circuit is input to the gate signal line G1. Then, analog video signals are sequentially input to the source signal lines (S1 to Sx). All the switching TFTs 1801 connected to the gate signal line G1
Is turned on, the analog video signal input to the source signal line is switched to the switching TFT 1801.
Through the gate of the driving TFT 1804.

Here, the switching TFT 1801
And the driving TFT 1804 are both n-channel TFTs.
Although a timing chart using an FT will be described as an example, the switching TFT and the driving TFT may be either an n-channel TFT or a p-channel TFT.

Note that, in this specification, the state where the TFT is turned on indicates a state where the gate voltage of the TFT changes and the source and the drain thereof conduct.

The amount of current flowing through the channel forming region of the driving TFT 1804 is controlled by the height (voltage) of the signal input to the gate electrode. Therefore, E
The potential applied to the pixel electrode of the L element 1806 is equal to the driving TF
It depends on the level of the potential of the analog video signal input to the gate electrode of T1804. And the EL element 18
Reference numeral 06 emits light under the control of the potential of the analog video signal.

When the above operation is repeated and the input of the analog video signal to the source signal lines (S1 to Sx) ends, the first line period (L1) ends. In addition,
The period until the input of the analog video signal to the source signal lines (S1 to Sx) ends and the horizontal retrace period may be combined into one line period. Then, in the second line period (L2), a selection signal is input to the gate signal line G2. Then, analog video signals are sequentially input to the source signal lines (S1 to Sx) in the same manner as in the first line period (L1).

Then, all the gate signal lines (G1 to Gy)
When the selection signal is input to all the line periods (L1 to L1)
Ly) ends. When all the line periods (L1 to Ly) end, one frame period ends. All the pixels display during one frame period, and one image is formed. Note that all the line periods (L1 to Ly) and the vertical blanking period may be combined into one frame period.

As described above, the amount of light emitted from the EL element 1806 is controlled by the analog video signal, and gradation is displayed by controlling the amount of light emitted. This method is a driving method called analog gray scale, and gray scale display is performed by a change in potential of an analog video signal input to a source signal line.

[0025]

As shown in FIG. 10, a conventional EL display device has a driving TFT 180 for a pixel portion.
The drain region No. 4 was only connected to the EL element 1806.

Here, the pixel TFT (switching TF)
T and driving TFTs) and TFTs forming driving circuits (source signal line driving circuit and gate signal line driving circuit)
An EL material is formed over a substrate having an insulating surface, and then a driving TFT and an EL element are electrically connected. In this specification, the steps before forming the EL material are referred to as TFT steps.

Therefore, in the conventional display device, the EL
Before the material is formed, the drain region of the driving TFT is open in circuit. Normal operation of the pixel TFT can be determined only by forming an EL material, completing a display device, and performing a lighting test. For this reason, even if an abnormality occurs in the pixel TFT and a normal display cannot be performed, detection cannot be performed until the final step, resulting in waste of the process.

As described above, in the conventional EL display device, the operation of the pixel TFT could not be confirmed in the process prior to the EL material film formation, causing unnecessary manufacturing cost.

The present invention has been made in view of the above problems, and has as its object to provide an active matrix type EL display device which can confirm the operation of a pixel TFT before forming an EL material. .

[0030]

In order to solve the above-mentioned problems, the present inventor inspects whether there is any problem in the driving TFT and the switching TFT before forming the EL material. , A substrate having a problematic TFT (hereinafter referred to as
(Represented as a defective product) so as not to proceed to the EL material film forming step, and to reduce waste of the production line.

Hereinafter, the configuration of the EL display device of the present invention will be described.

According to the present invention, an EL display having a plurality of source signal lines, a plurality of gate signal lines, a plurality of power supply lines, a plurality of switching thin film transistors, and a plurality of driving thin film transistors on an insulating substrate. The device has a test capacitor having one end connected to the drain region of the driving thin film transistor and the other end connected to the gate signal line, and the power supply line is led out of the insulating substrate via a switch. E characterized by having
An L display device is provided.

The switch is provided for each of the plurality of power supply lines, and includes a driving circuit for sequentially driving the switches.
An EL display device may be provided over the insulating substrate.

The driving circuit for sequentially driving the switches may be an EL display device characterized in that a part of the driving circuit is shared with the source signal line driving circuit.

[0035] The EL display device may be characterized in that the inspection capacitance takes a value of 0.05 pF to 1 pF.

According to the present invention, a plurality of source signal lines, a plurality of gate signal lines, a plurality of power supply lines, a plurality of switching thin film transistors, a plurality of driving thin film transistors, a plurality of driving thin film transistors, EL having inspection capacitance connected to drain region of thin film transistor
In the method for inspecting a display device, a step of operating the driving thin film transistor to charge the inspection capacitance to a constant potential, and a method of setting the potential of the power supply line different from the inspection capacitance after the driving thin film transistor is turned off. There is provided an inspection method for an EL display device, comprising: a step of setting a potential; and a step of extracting a charge charged in the inspection capacitance to the outside for each pixel via the power supply line and detecting a potential change. You.

A computer, a video camera, a head mounted display, an image reproducing device, or a portable information terminal using the display device may be used.

[0038]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of an EL display device according to the present invention and a method for inspecting the same will be described below.

FIG. 1 shows a first embodiment of the present invention.
FIG. 1 is a configuration diagram of a pixel portion of a display device of the present invention.

Power supply lines V1 to Vx, source signal line S1
To Sx, gate signal lines G1 to Gy, switching TF
T9102, driving TFT 9106, storage capacitor 910
7, an EL element 9105, and a test capacitor 9108.

The switching TFT 9102 is
Although a double gate structure is shown, the switching TFT of the pixel of the display device of the present invention is not limited to the double gate structure, and may have a single gate structure or a multi-gate structure with a double gate or more.

Although the driving TFT 9106 has a single gate structure, the driving TFT of the pixel of the display device of the present invention may have a double gate structure or a multi-gate structure.

Here, the drain region of the driving TFT 9106 is not only the EL element 9105 but also the inspection capacitor 9108.
Is also connected. In this example, the inspection capacity 9108
Is inserted between the drain region of the driving TFT 9106 and the gate signal line, but the configuration of the present invention is not limited to this. It may be between the drain region and another individual wiring.

FIG. 2 is a block diagram of the display device of the present invention.

The source signal line driving circuit 9201, the gate signal line driving circuits 9202 and 9203, the inspection driving circuit 92
04, switches 9205 and 9206, source signal line 92
07-9209, gate signal lines 9210-9212, pixel portion power supply lines 9213 and 9214, power supply line lead terminals 9215, and an external inspection circuit 9216.

In FIG. 2, a part of the source signal line, the gate signal line, the power supply line, and the switch is shown as a representative. Actually, these are formed corresponding to the pixels constituting the display device.

Unlike the related art, an inspection drive circuit 9204 is added. Further, switches 9205 and 9206 controlled by the inspection drive circuit 9204 are inserted between the pixel unit power supply lines 9213 and 9214 and the power supply line lead terminal 9215 for each pixel unit power supply line. . The power supply line lead terminal is connected to the external inspection circuit 9.
216.

The test drive circuits 9204 are arranged independently in FIG. 2, but when the source signal line drive circuit is of the analog type, both can be used. (Not shown)

Next, regarding the inspection method used in the present invention,
explain.

In the description, reference is made to FIG. 1 and FIG.

Here, E after the TFT process is completed.
It is assumed that the substrate is inspected at the stage before the L material is formed. If the connection between the TFTs constituting the display device, the capacitance (retention capacitance, inspection capacitance, etc.), the resistance, and the like has been completed, the stage of this process is assumed. It is not limited to.

Here, in FIG. 1, the EL element 910
5 at the stage of performing the following inspection,
The L material is not formed, and the EL element 9105 is not formed.

First, as a first procedure, a voltage corresponding to the "Hi" signal, for example, 10 V, is applied to the power supply line.
Next, each of the driver circuits (the source signal line driver circuit 9201 and the gate signal line driver circuits 9202 and 9203) is sequentially scanned, and in each pixel, the driving TFT 9106 is turned on, and the voltage 10V of the power supply lines V1 to Vx is reduced. Each inspection capacity 9
Write to 108.

The inspection capacity is 0.05 pF to 1 pF.
And take the value of.

As a second procedure, the following is performed. Source signal line driving circuit 9201, gate signal line driving circuit 9
The TFTs 202 and 9203 are operated to drive the pixel portion TFT 9.
Turn off all 106. Next, power supply lines V1 to Vx
To a voltage corresponding to the “Lo” signal, for example, 0V
Set to. At this time, the switches 9205 and 9206 remain on.

As a result, the power supply lines V1 to V
x becomes 0V.

As a third procedure, the following is performed.

The driving TFT 9106 of each pixel is operated at the timing shown in FIG.

The timing chart of FIG. 3 shows a case where the switching TFT is an n-channel TFT and the driving TFT is a p-channel TFT. However, the switching TFT and the driving TFT are p-channel TFTs. Either a TFT or an n-channel TFT may be used.

The source signal lines S1 to Sx are sequentially operated.
Here, the operation for the two source signal lines S1 and S2 is shown and described as a representative, but the same operation is performed for all the source signal lines S1 to Sx.

In the pixel in which the signal of "Lo" is input to the source signal line, "Hi" is sequentially applied to the gate signal lines G1 to Gy.
Is input, the driving TFT 9106 is turned on.

When all the power supply lines V1 to Vx are connected, the wiring capacitance is too large, and it becomes difficult to detect the voltage. Therefore, a switch connected to the power supply line is necessary to check the operation of the pixel TFT individually for each column of pixels.

Here, one pixel column means a pixel having a switching TFT connected to the same source signal line.

While the source signal line S1 is selected, a switch connected to a power supply line V1 for supplying power to a pixel having a switching TFT whose source region is connected to the source signal line S1 is in an ON state. Becomes The switches connected to the power supply lines V2 to Vx corresponding to the other pixels are all in an off state.

Next, while the source signal line S2 is selected, a switch connected to a power supply line V2 for supplying power to a pixel having a switching TFT whose source region is connected to the source signal line S2 is: It turns on. The power supply lines V1 and V1 corresponding to the other pixels
The switches connected to 3-Vx are all off.

Here, in FIG. 3, T1 and T2 are:
Signals for turning on or off the switch connected to the power supply line V1 and the switch connected to the power supply line V2, respectively, are shown.

In this embodiment, when the signal of “Hi” is input, the switch connected to the power supply line is turned on at T 1 and T 2, and when the signal of “Lo” is input, , The switch is turned off.

In the pixel, when the driving TFT 9106 is turned on, the electric charge held in the inspection capacitor 9108 is discharged to the power supply lines V1 to Vx. With this discharge,
Voltage is generated on the power supply lines V1 to Vx.

This voltage is given as follows. Assuming that the wiring capacitance value of the power supply line of the pixel portion is C1, the capacitance up to the power supply line lead-out terminal 9215 is C2, and the inspection capacitance is C3, the generated voltage Vout is given by Expression 1.

[0070]

[Expression 1] V out = 10 × C3 / (C1 + C2 + C
3)

C1 = C2 = 10 pF, C3 = 0.1 pF
Then, the voltage V out becomes 0.05 V.

Since this voltage Vout is small, an external inspection circuit 9216 is attached to the power supply line supply terminal 9215 for detection.

If the pixel TFT is defective, charging or discharging cannot be performed, so that no voltage Vout is generated.

In the timing chart shown in FIG.
The voltage Vout is generated at the power supply line lead terminal 9215 every time a pixel is selected. However, if there is an abnormality in the pixel TFT, the voltage signal is lost as shown in 9301, and a defect is generated. Understand.

As described above, by sequentially selecting all the pixels, the inspection of the pixel TFT can be performed.

[0076]

Embodiments of the present invention will be described below.

(Embodiment 1) In this embodiment, an example of the configuration of an inspection drive circuit of a display device of the present invention will be described.

In FIG. 4, the test drive circuit is a DFF
9401 comprising a shift register 9402 comprising
AND circuits 9403, 9404, 9405 and buffer circuits 9406, 9407, 94 composed of inverters
08.

Although FIG. 4 shows only a portion corresponding to the three power supply lines of the inspection drive circuit, actually, the inspection drive circuit is a circuit corresponding to all the power supply lines. It is composed by

Buffer circuit paths 9406, 9407, 94
The switches 9205, 9206, etc. shown in FIG. 2 are connected to the outputs 9409, 9410, 9411 of 08, and connect the pixel portion power supply line and the power supply line lead terminal.

Input terminal 940 of shift register 9402
If a “Hi” voltage is input to 0, terminals 9409 to 941
All outputs of 1 become signals corresponding to "Hi", and all switches can be turned on.

(Embodiment 2) In this embodiment, a configuration example of an external inspection circuit of a display device of the present invention will be described.

In FIG. 5, external inspection circuit 9501
Is composed of a switch 9502 for switching connections, an amplifier 9505 for signal detection, a voltage source 9503, a resistor 9504, and the like.

In the switch 9502, a voltage corresponding to the “Hi” signal, a 10 V voltage source 9503 or
The connection of the three input terminals to the voltage corresponding to the signal of “Lo”, the voltage source 9508 of 0 V, or the amplifier 9505 for amplifying the signal is selected.

The voltages of the voltage sources 9503 and 9508 are not limited to the above values, but can be optimized as needed.

A power supply line lead terminal of a substrate of a display device to be inspected is connected to the input 9507, and the inspection is performed according to the procedure shown in the embodiment. The judgment of the inspection is made by monitoring the output 9506 of the amplifier 9505.

The amplifier 9505 used here has a voltage gain of about 10 to 1000 times, and amplifies and detects a detection signal generated on the power supply line. Amplifier gain is 10
About 0 times is desirable.

This embodiment can be implemented by freely combining with the first embodiment.

(Embodiment 3) In the present invention, the driving TF
T108 is n-channel TFT or p-channel TFT
However, either of them can be used, but the EL element 1
When the anode 10 is a pixel electrode and the cathode is a counter electrode, the driving TFT 108 is preferably a p-channel TFT. Conversely, when the anode of the EL element 110 is a counter electrode and the cathode is a pixel electrode, the driving TFT 108 is an n-channel TFT.
Preferably, it is FT.

This embodiment can be implemented by freely combining with any of Embodiments 1 and 2.

Embodiment 4 In this embodiment, an example in which an EL display device is manufactured by using the present invention will be described.

FIG. 6A is a top view of an EL display device using the present invention. In FIG. 6A, reference numeral 4010 denotes a substrate, 4011 denotes a pixel portion, 4012 denotes a source signal line driver circuit, 4013a and 4013b denote gate signal line driver circuits, and respective driver circuits are wirings 4014a and 4014.
b, through 4015 and 4016 to FPC 4017,
Connected to an external device.

Although the present embodiment shows an example in which the inspection drive circuit is also used as the source signal line drive circuit 4012, the present invention is not limited to this configuration. The inspection driving circuit may be provided separately from the source signal line driving circuit.

Here, the cover member 6000 is formed so as to surround at least the pixel portion, preferably the driving circuit and the pixel portion.
A sealing material (also referred to as a housing material) 7000 and a sealing material (a second sealing material) 7001 are provided.

FIG. 6B shows a cross-sectional structure of the EL display device of this embodiment.
A driving circuit TFT 4022 (here, a CMOS circuit combining an n-channel TFT and a p-channel TFT is illustrated) 4022 and a pixel portion TFT 40
23 (however, only the driving TFT for controlling the current to the EL element is shown here). These TFTs may use a known structure (top gate structure or bottom gate structure).

In FIG. 6B, the driving TF
The test capacitors and the like connected to the T drain electrode are not shown.

Driving circuit TFT 4022, pixel portion TF
When T4023 is completed, a pixel electrode 4027 made of a transparent conductive film electrically connected to the drain of the pixel portion TFT 4023 is formed on an interlayer insulating film (flattening film) 4026 made of a resin material. As the transparent conductive film, a compound of indium oxide and tin oxide (called ITO) or a compound of indium oxide and zinc oxide can be used. After the pixel electrode 4027 is formed, an insulating film 4028 is formed, and an opening is formed over the pixel electrode 4027.

Next, an EL layer 4029 is formed. The EL layer 4029 is formed of a known EL material (a hole injection layer, a hole transport layer,
A light-emitting layer, an electron transport layer, or an electron injection layer) may be freely combined to form a stacked structure or a single-layer structure. A known technique may be used to determine the structure. Also, E
The L material includes a low molecular material and a high molecular (polymer) material. When a low molecular material is used, an evaporation method is used, but when a high molecular material is used, a spin coating method,
A simple method such as a printing method or an inkjet method can be used.

In this embodiment, the EL layer 4029 is formed by an evaporation method using a shadow mask. By forming a light-emitting layer (a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer) capable of emitting light having different wavelengths for each pixel using a shadow mask, color display becomes possible. In addition, there are a method in which a color conversion layer (CCM) and a color filter are combined, and a method in which a white light emitting layer and a color filter are combined, and any method may be used. Of course, monochromatic EL
It can also be a display device.

After forming the EL layer 4029, a cathode 4030 is formed thereon. Cathode 4030 and EL layer 4029
It is desirable to remove as much as possible moisture and oxygen existing at the interface. Therefore, the EL layer 4029 and the cathode 40 in vacuum
It is necessary to devise a method of continuously forming the film 30 or forming the EL layer 4029 in an inert atmosphere and forming the cathode 4030 without opening to the atmosphere. In this embodiment, the above-described film formation is made possible by using a multi-chamber type (cluster tool type) film formation apparatus.

In this embodiment, the cathode 4030 is
A laminated structure of a LiF (lithium fluoride) film and an Al (aluminum) film is used. Specifically, a 1-nm-thick LiF (lithium fluoride) film is formed over the EL layer 4029 by a vapor deposition method, and a 300-nm-thick aluminum film is formed thereover. Of course, a MgAg electrode which is a known cathode material may be used. The cathode 4030 is connected to the wiring 4016 in a region indicated by 4031. A wiring 4016 is a power supply line for applying a predetermined voltage to the cathode 4030,
It is connected to FPC 4017 through conductive paste material 4032.

In the region indicated by 4031, the cathode 40
In order to electrically connect the wiring 30 and the wiring 3016, it is necessary to form a contact hole in the interlayer insulating film 4026 and the insulating film 4028. These are interlayer insulating films 4026
May be formed at the time of etching (at the time of forming the contact hole for the pixel electrode) or at the time of etching the insulating film 4028 (at the time of forming the opening before the EL layer is formed). When the insulating film 4028 is etched, etching may be performed at a time up to the interlayer insulating film 4026. In this case, if the interlayer insulating film 4026 and the insulating film 4028 are made of the same resin material, the shape of the contact hole can be improved.

The passivation film 6003 and the filler 600 cover the surface of the EL element thus formed.
4. The cover material 6000 is formed.

Further, a sealing material 7 is provided inside the cover material 6000 and the substrate 4010 so as to surround the EL element portion.
000 is provided, and a sealing material (second sealing material) 7001 is formed outside the sealing material 7000.

At this time, the filler 6004 also functions as an adhesive for bonding the cover material 6000.
As the filler 6004, PVC (polyvinyl chloride), epoxy resin, silicone resin, PVB (polyvinyl butyral), or EVA (ethylene vinyl acetate) can be used. It is preferable to provide a desiccant inside the filler 6004 because a moisture absorbing effect can be maintained.

A spacer may be contained in the filler 6004. At this time, the spacer may be a granular substance made of BaO or the like, and the spacer itself may have hygroscopicity.

When a spacer is provided, the passivation film 6003 can reduce the spacer pressure.
In addition to the passivation film 6003, a resin film or the like for relaxing a spacer pressure may be provided.

Further, as the cover material 6000, a glass plate, an aluminum plate, a stainless steel plate, FRP (Fiber)
rglass-Reinforced Plastic
s) plate, PVF (polyvinyl fluoride) film,
Mylar film, polyester film or acrylic film can be used. The filling material 600
When PVB or EVA is used as 4, it is preferable to use a sheet having a structure in which aluminum foil of several tens of μm is sandwiched between PVF films or Mylar films.

However, depending on the direction of light emission (the direction of light emission) from the EL element, the cover material 6000 needs to have translucency.

Further, the wiring 4016 is formed of the sealing material 70.
00 and the gap between the sealing material 7001 and the substrate 4010, and is electrically connected to the FPC 4017. Although the wiring 4016 has been described here, the other wiring 4016
Similarly, 14a, 4014b, and 4015 are electrically connected to the FPC 4017 through the gap between the sealing material 7000 and the sealing material 7001 and the substrate 4010.

In this embodiment, the cover material 6000 is adhered after the filling material 6004 is provided, and the sealing material 7000 is attached so as to cover the side surface (exposed surface) of the filling material 6004. Lumber 70
After attaching 00, the filler 6004 may be provided. In this case, an injection port for a filler is provided to communicate with a space formed by the substrate 4010, the cover material 6000, and the sealing material 7000. Then, the gap is vacuumed (10
-2 Torr or less), immerse the injection port in the water tank containing the filler, and then fill the gap with the filler by setting the pressure outside the gap higher than the pressure inside the gap.

This embodiment can be implemented by freely combining with any of Embodiments 1 to 3.

(Embodiment 5) In this embodiment, a description will be given of the configuration of a source signal side driving circuit when driving is performed not in the analog gray scale described in the conventional example but in digital time gray scale.

FIG. 7 is a circuit diagram showing an example of the source signal side drive circuit used in this embodiment.

In the present invention, the driving method can be applied to any of analog gray scale, digital time gray scale, digital area gray scale and the like. Further, a method combining these gradation methods is also possible.

In FIG. 7, a shift register 801, latches (A) (802), and latches (B) (803) are arranged as shown in the figure.

In this embodiment, one set of latches (A)
(802) and one set of latches (B) (803) correspond to outputs to the four source signal lines S_a to S_d.
Therefore, there are four input lines VD for digital video signals input from the outside, and the signals input to the source signal lines S_a to S_d are respectively input.

In this embodiment, the level shifter for changing the amplitude of the voltage of the signal is not provided. However, the level shifter may be provided as appropriate.

The clock signals CLK, the clock signal CLKB whose polarity is inverted, the start pulse signal SP,
The driving direction switching signals SL / R are input to the shift register 801 from the wirings shown in the figure. A digital data signal VD input from the outside is input to the latch (A) (802) from the wiring shown in the figure. Latch signal S_LAT, signal S_LA with inverted polarity of S_LAT
Tb is calculated from the wiring shown in FIG.
Input to 3).

Regarding the detailed structure of the latches (A) (802), the latches (A) (8) corresponding to the source signal line S_a
02) will be described as an example. A part 804 of the latch (A) (802) has two clocked inverters and two inverters.

FIG. 8 is a top view of a part 804 of the latch (A) (802). Reference numerals 831a and 831b denote active layers of TFTs forming one of the inverters included in a part 804 of the latch (A) (802), and reference numeral 836 denotes a common gate electrode of the TFT forming one of the inverters. is there. Reference numerals 832a and 832b denote active layers of TFTs forming another inverter included in a part 804 of the latch (A) (802).
37b is a gate electrode provided on each of the active layers 832a and 832b. Note that the gate electrodes 837a and 83
7b is electrically connected.

Each of 833a and 833b is an active layer of a TFT forming one of the clocked inverters included in a part 804 of the latch (A) (802). Gate electrodes 838a and 838b are provided on the active layer 833a, and have a double gate structure. On the active layer 833b, gate electrodes 838b and 839 are provided to form a double gate structure.

Reference numerals 834a and 834b denote active layers of a TFT forming another clocked inverter included in a part 804 of the latch (A) (802). Gate electrodes 839 and 840 are provided on the active layer 834a to form a double gate structure. Further, gate electrodes 840 and 841 are provided on the active layer 834b to form a double gate structure.

This embodiment can be implemented by freely combining with any of Embodiments 1 to 4.

(Embodiment 6) In the EL display device of the present invention, the material used for the EL layer included in the EL element is not limited to the organic EL material, but may be an inorganic EL material. However, since a current inorganic EL material has a very high driving voltage, a TFT having a withstand voltage characteristic capable of withstanding such a driving voltage must be used.

Alternatively, if an inorganic EL material having a further lower driving voltage is developed in the future, it can be applied to the present invention.

This embodiment can be implemented by freely combining with any of Embodiments 1 to 5.

Embodiment 7 An electronic display, particularly an EL display, formed by using the present invention can be used for various electronic devices. Hereinafter, electronic devices incorporating an electronic display formed using the present invention as a display medium will be described.

Such electronic devices include a video camera, a television receiver, a digital camera, a head mounted display (goggle type display), a game machine, a telephone, a car navigation, a personal computer,
Image playback devices, mobile information terminals (mobile computers,
A mobile phone or an electronic book). One example is shown in FIG.

FIG. 9A shows a personal computer, which includes a main body 2001, a housing 2002, a display portion 2003, a keyboard 2004, and the like. The EL display device of the present invention can be used for the display portion 2003 of a personal computer.

FIG. 9B shows a video camera,
101, display unit 2102, voice input unit 2103, operation switch 2104, battery 2105, image receiving unit 2106
And so on. The EL display device of the present invention can be used for the display portion 2102 of a video camera.

FIG. 9C shows a part (one side on the right) of the head mounted display.
4, including an optical system 2305, a display unit 2306, and the like. The EL display device of the present invention can be used for the display portion 2306 of a head mounted display.

FIG. 9D shows an image reproducing apparatus (specifically, a DVD reproducing apparatus) provided with a recording medium.
1, recording medium (CD, LD, DVD, etc.) 2402,
An operation switch 2403, a display unit (a) 2404, a display unit (b) 2405, and the like are included. The display unit (a) mainly displays image information, and the display unit (b) mainly displays character information. However, the EL display device of the present invention employs the display units (a), ( b) can be used. Note that as an image reproducing apparatus provided with a recording medium, C
The present invention can be used for a D playback device, a game machine, and the like.

FIG. 9E shows a portable computer, which includes a main body 2501, a camera section 2502, an image receiving section 2503, operation switches 2504, a display section 2505, and the like. The EL display device of the present invention can be used for the display portion 2505 of a portable computer.

Further, if the emission luminance of the EL material becomes higher in the future, it can be used for a front type or rear type projector.

The electronic apparatus of this embodiment can be realized by using any combination of the first to sixth embodiments.

(Embodiment 8) FIG. 12 shows an example in which an EL display device is used in a mobile phone.

[0138] The portable telephone has a housing A1201 and a housing B12.
02 and an antenna 1205, and the housing A1
A display unit 1200 and a microphone 1209 are formed on a surface A 1203 of the housing 201, and a surface B 1204 of a housing B 1202 is formed.
Are formed with a speaker 1206, operation keys 1207, a power switch 1208, and the like.

The EL display device of the present invention can be used for a display section 1200 of a mobile phone.

The speaker 1206 and the operation keys 12
07, the display portion 1200, the microphone 1209, and the power switch 1208 can be formed in any part of the housing A 1201 and the housing B 1202 without being limited to the above arrangement.

In FIG. 12, the portable telephone is composed of two housing parts (a housing A 1201 and a housing B 1202), and one side thereof is connected by a hinge (not shown).
By closing the hinge, the housing A120 is closed.
1 and the surface B120 of the housing B1202.
4 can be overlapped. Note that overlapping the front surface A1203 of the housing A1201 and the front surface B1204 of the housing B1202 is referred to as folding in two.

Further, in the example of this portable telephone, the usage as shown in FIG. 13 is possible. That is, the speaker 1
It is possible to place the speaker 1206 near the ear 1211 and the microphone 1209 at the mouth 1212 by arranging the microphone 206 and the microphone 1209 in different housing parts and changing the angle between the surface A 1203 and the surface B 1204. Become. With such a configuration, there is an advantage that another person cannot see the mouth 1212 during a call. Also, since the mouth 1212 and the microphone 1209 are close to each other,
The effect of noise is reduced, good communication is enabled, and furthermore, there is an effect that a noise filter in the telephone can be reduced. Also, if the number of operation keys 1207 is increased,
It can also be used as a portable information terminal.

As described above, the applicable range of the present invention is extremely wide, and can be applied to electronic devices in all fields. Further, the electronic apparatus according to the present embodiment can be realized by using any combination of the embodiments 1 to 6.

[0144]

According to the above configuration, it is possible to provide a display device capable of inspecting a pixel portion TFT before an EL layer is formed. As a result, defective products can be removed before the EL material is formed, and manufacturing costs can be reduced.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a circuit configuration of a pixel portion of a display device of the present invention.

FIG. 2 is a block diagram of a display device of the present invention.

FIG. 3 is a timing chart illustrating a method for driving a display device of the present invention.

FIG. 4 is a diagram showing an embodiment of an inspection drive circuit of the display device of the present invention.

FIG. 5 is a diagram showing an embodiment of an external inspection circuit of the display device of the present invention.

FIG. 6 is a top view and a cross-sectional view of a display device of the present invention.

FIG. 7 is a circuit diagram of a source signal side driver circuit of a display device according to the present invention.

FIG. 8 is a top view of a latch of the display device according to the present invention.

FIG. 9 illustrates an electronic device using the display device of the present invention.

FIG. 10 is a circuit diagram of a pixel portion of a conventional display device.

FIG. 11 is a timing chart illustrating an analog driving method of a display device.

FIG. 12 illustrates a mobile phone using the present invention.

FIG. 13 is a diagram showing how to use a mobile phone according to the present invention.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) G09G 3/20 680 G09G 3/20 680A 680G 680S 680T 680V 3/30 3/30 Z H05B 33/10 H05B 33 / 10 33/14 33/14 A F term (reference) 3K007 AB18 BA06 BB01 BB04 BB05 DA01 DB03 EB00 FA00 5C080 AA06 BB05 DD15 DD28 FF11 JJ03 JJ04 JJ06 5C094 AA42 AA43 BA03 BA27 CA19 DA09 DA13 DB01 DB04 FB03 EA03 EA03 EA03 FB15 GB10 HA10 JA02 5G435 AA17 BB05 CC09 EE37 KK05 KK10

Claims (10)

[Claims]
1. An EL display device having a plurality of source signal lines, a plurality of gate signal lines, a plurality of power supply lines, a plurality of switching thin film transistors, and a plurality of driving thin film transistors on an insulating substrate. A test capacitor having one end connected to the drain region of the driving thin film transistor and the other end connected to the gate signal line; and the power supply line is led out of the insulating substrate via a switch. An EL display device.
2. The EL display device according to claim 1, wherein the switch is provided for each of the plurality of power supply lines, and has a drive circuit for sequentially driving the switches on the insulating substrate.
3. The EL display device according to claim 2, wherein the drive circuit for sequentially driving the switches shares a part with the source signal line drive circuit.
4. The EL display device according to claim 1, wherein the test capacitance has a value of 0.05 pF to 1 pF.
5. An insulating substrate, comprising: a plurality of source signal lines; a plurality of gate signal lines; a plurality of power supply lines; a plurality of switching thin film transistors; a plurality of driving thin film transistors; A method for testing an EL display device having a test capacitor connected to a drain region, the method comprising: activating the driving thin film transistor to charge the test capacitor to a constant potential; and turning off the driving thin film transistor; A step of setting a potential of a supply line to a potential different from the test capacitance; and a step of extracting a charge charged in the test capacitance to the outside for each pixel via the power supply line and detecting a potential change. An inspection method for an EL display device having:
6. A computer using the EL display device according to any one of claims 1 to 4.
7. A video camera using the EL display device according to any one of claims 1 to 4.
8. A head-mounted display using the EL display device according to any one of claims 1 to 4.
9. An image reproducing apparatus using the EL display device according to claim 1. Description:
10. A portable information terminal using the EL display device according to any one of claims 1 to 4.
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