JP2002023662A - Electrooptical device and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electrooptical device having stable display characteristics and to provide an electronic equipment using this device. SOLUTION: The liquid crystal device 200 has a counter substrate 20 having a counter electrode 21, a TFT array substrate 10, and a liquid crystal layer 50 held between the substrates. The counter electrode 21 is electrically connected through a conducting pad 120 and a conductive material 112 formed on the TFT arrays substrate 10. The conducting material 112 consists of resin 111 and conductive particles 110 dispersed in the resin. Before the TFT array substrate 10 and the counter substrate 20 are laminated, the conductive particles 110 have a diameter larger by 0.2 to 0.8 μm than the distance between the counter substrate 21 and the conductive pad 120 when the liquid crystal device 200 is manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention belongs to the technical field of electro-optical devices, and particularly to the technical field of the structure of liquid crystal devices.

[0002]

2. Description of the Related Art For example, an electro-optical device of an active matrix drive system is a TFT (Thin Film Transistor).
An array substrate and a counter substrate are disposed to face each other, and a liquid crystal is sandwiched between the two substrates. The two substrates are bonded by a rectangular sealing material disposed on the outer peripheral portion of the substrates, and the liquid crystal is held in a space formed by the two substrates and the sealing material.

In a TFT array substrate, for example, a large number of scanning lines and data lines arranged vertically and horizontally on a quartz substrate, a large number of TFTs corresponding to respective intersections thereof, and pixel electrodes connected to the TFTs. Is provided. On the other hand, in the counter substrate, a counter electrode of a flat film is provided on, for example, a quartz substrate. The TFT array substrate and the counter substrate are provided with an alignment film made of an organic resin such as polyimide on the side in contact with the liquid crystal layer.

A pad for inputting a scanning signal voltage or a data signal voltage to a scanning line or a data line disposed on the TFT array substrate is disposed on the TFT array substrate. The scanning signal voltage and the image signal voltage are supplied to the lines and the data lines, respectively. Furthermore,
A conductive pad is provided on the TFT array substrate and is electrically connected to a counter electrode on the counter substrate via a conductive material. A common voltage is supplied to the counter electrode via the conductive pad. You. As described above, various signal voltages are collectively supplied on the TFT array substrate side.

[0005]

As the conductive material for electrically connecting the opposing electrode and the conductive pad, for example, a material in which conductive particles are dispersed in a resin is used. However, when the alignment film covers the counter electrode and the conductive pad, respectively, the contact between the counter electrode and the conductive particles, the contact between the conductive pad and the conductive particles becomes insufficient, and the counter electrode and the conductive pad formed by the conductive material become inconsistent. However, there is a problem that the contact resistance is high, the variation is large, and the display quality is deteriorated.

The present invention has been made to solve such a problem, and an object of the present invention is to provide an electro-optical device and an electronic apparatus having high display quality.

[0007]

In order to solve such a problem, the present invention employs the following configuration.

An electro-optical device according to the present invention includes a first substrate having a conductive film, and a second substrate having a conduction pad disposed to face the first substrate with a predetermined gap therebetween and facing the conductive film. In an electro-optical device, comprising: a substrate; and a conductive material in which conductive particles are dispersed in a resin that electrically connects the conductive film and the conductive pad. Are pressure-bonded via the conductive material and are electrically connected by the conductive particles.

According to such a configuration of the present invention, since the conductive film and the conductive pad are press-bonded via the conductive material, the conductive particles and the conductive film are compared with the case where they are simply in contact with each other. In addition, the contact area with the conduction pad can be increased. Thereby, the resistance between the conductive film and the conductive pad via the conductive material can be reduced. Here, if the conductive particles are elastic, the conductive particles are distorted by pressure bonding, so that the contact area between the conductive particles, the conductive film, and the conduction pad can be increased.

[0010] A first organic insulating film is disposed on the first substrate so as to cover the conductive film, and a second organic insulating film is disposed on the second substrate so as to cover the conduction pad. The conductive particles penetrate the first organic insulating film and the second organic insulating film. According to such a configuration, the conductive particles penetrate the first organic insulating film and the second organic insulating film by pressure bonding, in other words, break through, so that the conductive particles and the conductive film and the conduction pad are reliably connected. Can be contacted.

In addition, the conductive particles before the pressure bonding have a distance of 0.2 to 0.2 from the distance between the conductive film and the conductive pad.
It has a diameter larger by 0.8 μm. With such a configuration, the contact resistance between the conductive film and the conductive pad via the conductive material can be reduced and stabilized, and an electro-optical device with constantly stable quality characteristics can be obtained. Thus, the diameter of the conductive particles before crimping,
By making the distance between the conductive film and the conductive pad 0.2 μm or more, the contact resistance between the conductive film and the conductive pad via the conductive material can be reduced. In addition, when the diameter of the conductive particles before the pressure bonding is set to 0.8 μm or less than the distance between the conductive film and the conduction pad, when applied to a liquid crystal device, the color due to the difference in the thickness of the liquid crystal layer in the display region is reduced. The occurrence of unevenness can be prevented, and the in-plane display characteristics can be made uniform.

The conductive particles are characterized in that a metal coating is formed on the surface of a glass ball. Thus, as the conductive particles, those having a metal film formed on the surface of a glass ball can be used. Since the glass ball is an elastic body, the conductive particles are distorted by pressure bonding, and the contact area between the conductive particles and the conductive film and the conduction pad can be increased.

Further, the conductive particles are contained in the conductive material in a ratio of 10 to 40% by weight. As described above, by setting the content of the conductive particles to 10% by weight or more, the contact resistance between the conductive film and the conductive pad via the conductive material can be reliably reduced, and is set to 40% by weight or less. Thereby, the adhesive strength between the first substrate and the second substrate by the resin can be maintained.

In addition, a sealing material disposed between the first substrate and the second substrate along an outer peripheral portion of the substrate, and a region formed by the first substrate, the second substrate, and the sealing material And a liquid crystal held in the liquid crystal display. Thus, the present invention can be applied to a liquid crystal device in which liquid crystal is held between two substrates, and a liquid crystal device with high display quality can be obtained.

Further, the resin of the sealing material and the conductive material has an ultraviolet curing resin. According to such a configuration, the curing step of the sealing material and the curing step of the conductive material can be performed at the same time, and the manufacturing process can be simplified.

Further, the conductive particles are an elastic body. According to such a configuration, since the conductive particles are distorted by pressure bonding, the contact area between the conductive particles and the conductive film and the conduction pad can be increased.

Further, the conductive film or the conduction pad contains aluminum. According to such a configuration, since aluminum is a soft material, the conductive particles enter the conductive film or conductive pad containing aluminum by pressure bonding. Thus, the contact area between the conductive particles and the conductive film or the conduction pad can be increased, and the contact resistance can be reduced.

According to another electro-optical device of the present invention, there is provided a first substrate having a conduction electrode, a second substrate having a conduction electrode opposed to the first substrate and facing the conduction electrode of the first substrate. An electro-optical device, comprising: a conductive material made of conductive particles for electrically connecting the conductive electrode of the first substrate and the conductive electrode of the second substrate; The conductive electrodes of the two substrates are characterized in that the conductive material is crimped and electrically connected via the conductive material.

According to such a configuration of the present invention, since the conductive electrode of the first substrate and the conductive electrode of the second substrate are press-bonded via the conductive material, the conductive electrode is compared with a case where the conductive electrode is simply in contact with each other. In addition, the contact area between the conductive particles and the conductive electrode can be increased. Thereby, the resistance between the two conductive electrodes via the conductive material can be reduced. Here, if the conductive particles are elastic, the conductive particles are distorted by pressure bonding, so that the contact area between the conductive particles and the conductive electrode can be increased.

An organic insulating film is disposed on the conductive electrode on at least one of the first substrate and the second substrate, and the conductive material penetrates the organic insulating film to form the first insulating film.
The conductive electrode of the substrate and the conductive electrode of the second substrate are electrically connected. According to such a configuration,
By the pressure bonding, the conductive particles penetrate the organic insulating film, in other words, break through, so that the conductive particles can be reliably brought into contact with the conductive electrode.

According to another aspect of the invention, there is provided an electronic apparatus comprising: a light source; a light valve having the above-described electro-optical device for modulating light emitted from the light source; and a projection optical system for projecting light modulated by the light valve. And characterized in that: Further, the other electronic device includes a light source, a color separation unit that separates light emitted from the light source into a plurality of color lights, and the electro-optic device described above that modulates each of the color lights separated by the color separation unit. A light valve having a device, a color combining means for combining the color lights modulated by the light valve, and a projecting means for projecting the light combined by the color combining means. As described above, the above-described electro-optical device can be applied to an electronic device, and an electronic device with high display quality can be obtained.

[0022]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings, taking a liquid crystal device as an electro-optical device as an example. (Configuration of Liquid Crystal Device) FIG. 1 shows the overall configuration of the liquid crystal device.
This will be described with reference to FIGS. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming a display area of a liquid crystal device. FIG.
FIG. 3 is a plan view of the T-array substrate 10 together with the components formed thereon as viewed from the counter substrate 20, and FIG. 3 is a cross-sectional view taken along the line HH ′ of FIG. .
FIG. 4 is a cross-sectional view of a display area, a seal area, and a conductive material forming area of the liquid crystal device. In the drawings, in order to make each layer and each member a size recognizable in the drawing,
The scale is appropriately set for each layer and each member.

In FIG. 1, a plurality of unit pixel regions formed in a matrix and constituting a display region of the liquid crystal device of the present embodiment are formed by a plurality of pixel electrodes 9 formed in a matrix.
a and a polysilicon type TF for controlling the pixel electrode 9a
A data line 6a made of T30 and supplied with an image signal is electrically connected to the source of the TFT 30. Image signals S1, S2,..., Sn to be written to the data lines 6a
May be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. Further, the scanning line 3a is electrically connected to the gate of the TFT 30, and the scanning signal G1, G2,...
Gm is configured to be applied line-sequentially in this order. The pixel electrode 9a is electrically connected to the drain of the TFT 30. By closing the switch of the TFT 30, which is a switching element, for a certain period, the image signals S1, S2,... Write at a predetermined timing. The image signals S1, S2 of a predetermined level written in the liquid crystal through the pixel electrode 9a,
, Sn are held for a certain period of time between a counter electrode (described later) formed on a counter substrate (described below). The liquid crystal is
By changing the orientation and order of the molecular assembly according to the applied voltage level, the light is modulated to enable a gray scale display. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode.

As shown in FIGS. 2 and 3, the liquid crystal device 200
The TFT array substrate 10 and the opposing substrate 20 are arranged to face each other, and a twisted nematic liquid crystal 50 having a twist of, for example, 90 degrees is sandwiched between the two substrates. The TFT array substrate 10 includes, for example, a plurality of TFTs 30 and a plurality of pixel electrodes (not shown) connected to each TFT on a quartz substrate.
Are arranged and configured. The counter substrate 20 is configured by disposing a counter electrode 21 as a conductive film on a quartz substrate or a glass substrate. On the TFT array substrate 10 and the counter substrate 20, an alignment film 16 as a second organic insulating film made of polyimide which determines an initial alignment state of the liquid crystal layer and a first organic insulating film as a first organic insulating film are provided on the side in contact with the liquid crystal layer 50. The alignment film 22 is formed with a thickness of 40 nm to 120 nm, preferably 80 nm. The TFT array substrate 10 and the opposing substrate 20 are bonded and fixed by a sealing material 52 made of an ultraviolet curable epoxy resin and an epoxy acrylate resin provided on the outer peripheral portion of the substrate. It is sealed by a sealing material 54. The liquid crystal 50 is held in a region formed by the TFT array substrate 10, the counter substrate 20, the sealing material 52, and the sealing material 54. Also, inside the sealing material 52 of the counter substrate 20,
In parallel, a frame light shielding film 53 is provided. In the display area inside the sealing material 52 of the TFT array substrate 10, a plurality of scanning lines and a plurality of data lines intersecting with each other are arranged, and the TFT 30 and each TF which are arranged at each intersection are arranged.
A pixel electrode 9a connected for each T is arranged. The data line driving circuit 101 is provided in a region outside the sealing material 52.
And an external circuit connection terminal 102 is provided along one side of the TFT array substrate 10.
Are provided along two sides adjacent to this one side.
The scanning line 3a is electrically connected to the scanning line driving circuit 104, and a scanning signal is supplied from the scanning line driving circuit 104 to the scanning line. The data line 6a and the data line driving circuit 1
01 is electrically connected, and an image signal is supplied from the data line driving circuit 104 to the data line 6a. The scanning line driving circuit 104 and the data line driving circuit 101 are each electrically connected to an external circuit connection terminal 102, and a clock signal, power, and the like are supplied from the external circuit connection terminal 102. Further, on the remaining one side of the TFT array substrate 10, a plurality of wirings 105 for connecting between the scanning line driving circuits 104 provided on both sides of the display area are provided. Further, at least one of the corners of the counter substrate 20,
In the places, the TFT array substrate 10 and the opposing substrate 20
There is provided a conductive material 106 for establishing electrical continuity between the conductive material and the conductive material. The conductive material 106 is formed by the counter electrode 21 and the TF
This is for electrically connecting a later-described conductive pad provided on the T-array substrate 10 and is made by dispersing conductive fine particles in an ultraviolet curable acrylic resin.

As shown in FIG. 4, a counter substrate 20 in a display area of the liquid crystal device 200 is formed, for example, on a glass substrate 60 by a second light-shielding film 23 formed in a matrix corresponding to a non-opening area of each pixel. And the counter electrode 2 over the entire surface of the substrate.
And an alignment film 22 on which a predetermined alignment process such as a rubbing process is performed is provided on the counter electrode 21. The counter electrode 21 is made of, for example, a transparent conductive thin film such as an ITO film.

On the other hand, the TFT array substrate 10 in the display area is
The first light-shielding films 11 a are provided at positions facing the respective light-shielding films 30. The first light-shielding film 11a, the second light-shielding film 23, and the frame light-shielding film 53 are preferably made of Ti, which is an opaque refractory metal,
It is composed of a metal simple substance, an alloy, a metal silicide or the like containing at least one of Cr, W, Ta, Mo and Pb. On the first light-shielding film 11a, a base insulating film 12 is provided over the entire surface of the substrate so as to cover the first light-shielding film 11a. Base insulating film 12
Is provided for electrically insulating the semiconductor layer 1a constituting the pixel switching TFT 30 from the first light shielding film 11a. The base insulating film 12 is made of, for example, NSG
(Non-doped silicate glass) or the like, or a silicon oxide film, a silicon nitride film, or the like.

The semiconductor layer 1 constituting the TFT 30 is provided on the base insulating film 12, and the gate insulating film 2 is provided so as to cover the semiconductor layer 1. The TFT 30 is
The semiconductor layer 1 has an LDD structure, and the semiconductor layer 1 is formed to further sandwich the channel region 1a, the low-concentration source region 1b and the low-concentration drain region 1c formed to sandwich the channel region 1a. High concentration source region 1
d and a high-concentration drain region 1e. On the gate insulating film 2, a scanning line 3a having a gate electrode corresponding to the channel region 1a of the semiconductor layer 1 and a capacitor line 3b are arranged. Further, the scanning line 3a and the capacitance line 3b
A relay layer 80 is formed via a first interlayer insulating film 81 formed so as to cover. The relay layer 80 is formed of the gate insulating film 2
And a high-concentration drain region 1e of the semiconductor layer 1 via a first contact hole 8a formed in the first interlayer insulating film 81.
Is electrically connected to the In the present embodiment, the semiconductor layer 1 extends from the high-concentration drain region 1e to form a first storage capacitor electrode 1f, and a part of the capacitor line 3b facing the first storage capacitor electrode 1f serves as a second storage capacitor electrode. As the first dielectric film sandwiched between these electrodes,
A storage capacity is configured. Further, a part of the relay layer 80 facing the second storage capacitor electrode is connected to the third storage capacitor electrode 80.
b, the first interlayer insulating film 81 is a second dielectric film sandwiched between these electrodes, whereby a second storage capacitor is formed. The first and second storage capacitors are connected in parallel via the contact hole 8a to form a storage capacitor 70.

On the first interlayer insulating film 81, the second interlayer insulating film 4 is formed so as to cover the relay layer 80. A data line 6a made of Al is formed on the second interlayer insulating film 4, and the data line 6a is formed by a contact formed on the gate insulating film 2, the first interlayer insulating film 81, and the second interlayer insulating film 4. The hole 5 electrically connects to the high concentration source region 1d of the semiconductor layer 1. In contrast, a third interlayer insulating film 7 is formed on the second interlayer insulating film 4 so as to cover the data line 6a. On the third interlayer insulating film 7, a pixel electrode 9 a made of ITO or the like electrically connected to the relay layer 80 via the contact holes 8 b formed in the second interlayer insulating film 4 and the third interlayer insulating film 7. Are formed. Further, an alignment film 16 is formed on the entire surface of the substrate so as to cover the pixel electrode 9a.

In the counter substrate 20 in the sealing region of the liquid crystal device 200, a counter electrode 21 and an alignment film 22 extending from the display region are formed on a glass substrate 60, respectively. On the other hand, the TFT array substrate 10 includes a base insulating film 12, a gate insulating film 2, a first interlayer insulating film 81, a second interlayer insulating film 4, and a third interlayer insulating film 7 extending from a display region on a quartz substrate 90. And an alignment film 22 are formed.
Then, a sealing material 52 is arranged between the TFT array substrate 10 and the counter substrate 20.

The counter substrate 20 in the conductive material forming region of the liquid crystal device 200 is, like the sealing region, a glass substrate 60.
On top, the counter electrode 21 and the alignment film 2 extending from the display area
2 are formed respectively. Note that the conductive material forming region refers to a region where the conductive material is formed, and in the present embodiment, corresponds to a vicinity of a corner of the substrate. On the other hand, in the TFT array substrate 10, a base insulating film 12 and a gate insulating film 2 extending from a display region are formed on a quartz substrate 90.
On the gate insulating film 2, the first conduction pad 121 formed in the same manufacturing process as the manufacturing process of the scanning line 3 a in the display area
Are formed. On the first conduction pad 121, a first interlayer insulating film 81 and a second interlayer insulating film 4 extending from the display area are formed. On the second interlayer insulating film 4, the second
A conductive pad (conductive electrode) 122 is formed, and the first conductive pad 121 and the second conductive pad 121 are formed by contact holes (not shown) formed in the first interlayer insulating film 81 and the second interlayer insulating film.
The conductive pads 122 are electrically connected. In the present embodiment, the conduction pad 120 electrically connected to the counter electrode 21 via the conduction material 112 is a two-layer structure of the first conduction pad 121 and the second conduction pad electrically connected. It is composed of a structure. This conduction pad 12
Four 0s are formed on the TFT array substrate corresponding to the corners of the counter electrode 21. Furthermore, the second conduction pad 12
2, an alignment film 22 is formed. TF
A conductive material 12 is provided between the T array substrate 10 and the counter substrate 20.
2 are arranged.

The conductive material 112 is formed by dispersing conductive particles 110 in an ultraviolet curable acrylic resin 111. The conductive particles 110 are formed by coating a surface of a glass ball 113 with a metal 114 such as gold with a thickness of, for example, 0.1 μm. The diameter of the conductive particles 110 has a standard deviation of 0.0.
The central value is controlled at 3 μm or less. In the state of the liquid crystal device 200, the distance between the conduction pad 120 and the counter electrode 21 is set to, for example, 3.2 μm. This value is
It is determined by the distance between the pixel electrode 9a and the counter electrode 21 in the display area. The diameter of the conductive particles 110 is selected in the range of 3.4 to 4.0 μm before the pressure bonding for bonding the TFT array substrate 10 and the counter substrate 20 together. That is, the diameter of the conductive particles 110 before the two substrates are bonded to each other is different from that of the counter electrode 21 and the conductive pad 120 in the conductive material forming region when the liquid crystal device is used.
Is set to be larger than the distance by 0.2 to 0.8 μm.

By making the diameter of the conductive particles 110 larger by 0.2 μm or more than the distance between the counter electrode 21 and the conduction pad 120 in the conduction material forming region when a liquid crystal device is formed, a pressure bonding described later is performed. The conductive particles 110 penetrate the alignment films 16 and 22 in other words, in other words, break through, so that the conductive particles 110 and the conductive pad 120 and the conductive particles 110 and the counter electrode 21 are surely in contact with each other. Thereby, the contact resistance between the counter electrode 21 and the conduction pad 120 can be reduced, and the display quality of the liquid crystal device can be improved. Further, the diameter of the conductive particles 110 is 0.8 μm larger than the distance between the counter electrode 21 and the conductive pad 120 in the conductive material forming region when the liquid crystal device is used.
With the following, the liquid crystal layer in the display region adjacent to the conductive material forming region can be maintained at a desired thickness.
Therefore, it is possible to prevent the occurrence of color unevenness due to the non-uniform thickness of the liquid crystal layer in the display region, and thus to make the display characteristics in-plane uniform. In addition, since the conductive particles 110 in the present embodiment are elastic bodies, they are distorted to some extent by pressure bonding. Further, the second conduction pad 12 which is a part of the conduction pad 120 that contacts the conductive particles 110
2 is soft because it contains Al, and the conductive particles 110 are sunk into the conduction pad 122 by pressure bonding.
For this reason, even if the diameter of the conductive particles 110 is larger than the distance between the counter electrode 21 and the conductive pad 120 in the conductive material forming region when the liquid crystal device is used, distortion of the conductive particles due to pressure bonding and deformation of the conductive particles The distance between the opposing electrode 21 and the conduction pad 120 can be controlled within a desired value range by the incorporation of the conductive particles into the conduction pad. Depending on the elastic properties of the conductive particles 110 to be used and the material of the conductive pad and the counter electrode that comes into contact with the conductive particles 110, the conductive material is formed when the diameter of the conductive particles 110 is set to a liquid crystal device. If the distance is 0.8 μm or less than the distance between the counter electrode 21 and the conduction pad 120 in the region, the display quality of the liquid crystal device is not adversely affected.

The difference between the particle size of the conductive particles and the distance between the counter electrode 21 and the conductive pad 120 (the distance between the substrates in the figure) in the conductive material forming region will be described below with reference to the graph of FIG. The relationship between the conduction resistance between the counter electrode and the conduction pad (vertical conduction resistance in the figure) will be described. The horizontal axis in FIG. 7 shows the difference between the particle size of the conductive particles contained in the conductive material and the distance between the counter electrode 21 and the conductive pad 120.
The vertical axis in FIG. 7 indicates the counter electrode 21 arranged via the conductive material.
And the conduction resistance between the conduction pad 120 and the conduction pad 120. In the measurement, the measured value includes a certain wiring resistance. As for the conduction resistance, measurement points are randomly selected, and the minimum value, average value, and maximum value of the measured values are plotted on a graph. As the conductive material, a conductive material containing 30% by weight of conductive particles is used. Here, since the crosstalk was not visually recognized when the conduction resistance value was 130Ω or less, a liquid crystal device having a conduction resistance value of 130Ω or less is regarded as a non-defective product.

As shown in FIG. 7, when the difference between the conductive particle diameter and the distance between the opposing electrode 21 and the conduction pad 120 (hereinafter referred to as the distance between the substrates) is 0 μm, the maximum value of the resistance value is 2 μm.
20Ω, the average value is 200Ω, and the minimum value is 170Ω. When the difference between the conductive particle diameter and the distance between the substrates is 0.1 μm, the maximum value of the resistance value is 180Ω, the average value is 155Ω, and the minimum value is 180Ω. When the difference between the conductive particle diameter and the distance between the substrates is 0.15 μm, the maximum value of the resistance value is 135.
Ω, the average value is 128Ω, and the minimum value is 110Ω. As described above, when the difference between the conductive particle diameter and the distance between the substrates is 0.15 μm or less, the resistance value is relatively high, and the resistance value varies. In contrast,
When the difference between the conductive particle diameter and the distance between the substrates is 0.2 μm, the maximum value of the resistance value is 110Ω, the average value is 105Ω, and the minimum value is 98Ω, and the difference between the conductive particle diameter and the distance between the substrates is Is 0.3 μm, the maximum value of the resistance value is 103Ω, the average value is 101Ω, and the minimum value is 92Ω. When the difference between the conductive particle diameter and the distance between the substrates is 0.5 μm, the maximum value of the resistance value is Is 104Ω, the average value is 99Ω, the minimum value is 93Ω, and the difference between the conductive particle diameter and the distance between the substrates is 0.8 μm.
Then, the maximum value of the resistance value is 105Ω, the average value is 100Ω,
The minimum value is 95Ω. That is, when the difference between the conductive particle diameter and the distance between the substrates is 0.2 μm or more, 0.15 μm
m, the resistance value is surely lower than that in the case of m or less, and is stable at a low resistance value. Further, it can be seen that the variation in the resistance value is reduced. Therefore, by making the particle size of the conductive particles 0.2 μm or more larger than the distance between the substrates, the contact resistance between the counter electrode 21 and the conduction pad 120 can be reduced, and the display without crosstalk occurs. A high-quality liquid crystal device can be stably obtained.

The conductive particles are desirably contained in the conductive material at a ratio of 10 to 40% by weight. By containing 10% by weight or more, the electrical connection between the counter electrode 21 and the conduction pad 120 is ensured, and the contact resistance can be reduced. The adhesive strength with the TFT array substrate can be maintained. FIG. 8 illustrates the relationship between the content of the conductive particles and the conduction resistance between the counter electrode and the conduction pad. In the measurement, the measured value includes a certain wiring resistance. The horizontal axis in FIG. 8 indicates the content (% by weight) of the conductive particles, and the vertical axis indicates the conduction resistance value between the counter electrode 21 and the conduction pad 120 arranged via the conduction material (in the figure,
Vertical movement resistance). As the conductive particles contained in the conductive material, those having a particle size 0.4 μm larger than the value of the distance between the counter electrode 21 and the conductive pad 120 are used.

As shown in FIG. 8, when the content of the conductive particles is 3% by weight, the resistance value is 180Ω, and when the content is 5% by weight,
When the resistance value is 125Ω and 10% by weight, the resistance value is 108
In the case of Ω, 15% by weight, the resistance value is 103Ω, 20% by weight.
, The resistance value is 102Ω, the resistance value is 30Ω%, the resistance value is 100Ω, and the resistance value is 40Ω%, the resistance value is 101Ω, 5Ω.
In the case of 0% by weight, the resistance value is 115Ω. FIG.
As shown in the graph, when the content is 10% by weight or more, the resistance value becomes low and the resistance becomes stable. By setting the content of the conductive particles to 10% by weight or more,
The contact resistance between the opposing electrode 21 and the conduction pad 120 can be reduced, and a liquid crystal device with high display quality without crosstalk can be stably obtained.

In the above-described embodiment, as the conductive particles, those obtained by coating the surface of a glass ball with gold are used. However, glass fibers, resin balls, ceramic particles, or the like may be used instead of the glass balls. However, nickel or silver can be used instead of gold, and the present invention is not limited to the embodiment.

Although a liquid crystal device is taken as an example of the electro-optical device here, the present invention is not limited to this, and conductive films formed on two substrates are connected by a conductive material. In this case, the contact resistance between the two conductive films can be stably reduced by limiting the particle size of the conductive material.

(Manufacturing Process of Embodiment of Liquid Crystal Device) Next, a brief description will be given, with reference to FIG. 5, of a substrate bonding process of the liquid crystal device having the above configuration.

First, a TFT array substrate and a counter substrate are prepared.

Next, as shown in the step (1) of FIG. 5, the TFT array substrate is fixedly arranged on the mounting table so that the pixel electrodes face upward, and an ultraviolet-curing resin sealing material is applied. The sealing material is formed in a rectangular shape along the outer periphery of the substrate except for a portion corresponding to a liquid crystal injection port. The sealing material is preliminarily mixed with a granular spacer having a diameter of 3.0 μm for maintaining a distance between the two substrates. The application of the sealant can be performed by screen printing, a dispenser, or the like.

Next, as shown in the step (2), a conductive material is applied on the TFT array substrate in the vicinity of the corners of the rectangular sealing material using a dispenser. As the conductive material, a material in which granular conductive particles having a diameter of 3.4 to 4.0 μm, here 3.7 μm, dispersed in an ultraviolet curable resin at a ratio of 10 to 40% by weight, here 30% by weight, is used. Using.

Next, as shown in step (3), the opposing substrate is arranged on the TFT array substrate so that the opposing electrode of the opposing substrate and the pixel electrode of the TFT array substrate face each other, and the two substrates are superposed. Press. In a pressurized state, ultraviolet light is irradiated from the counter substrate side to cure the sealing material and the conductive material, and the two substrates are bonded and fixed. By this pressure bonding step, the conductive particles contained in the conductive material break through the alignment film,
It contacts the counter electrode and the conduction pad. Further, since the conductive particles are distorted in the thickness direction of the substrate, the contact area between the conductive particles and the counter electrode and the conduction pad can be increased. At this time, the size of the conductive particles in the thickness direction of the substrate is 3.
It was 2 μm.

Next, as shown in step (4), a liquid crystal obtained by mixing a plurality of types of nematic liquid crystals is sucked and injected into a space between the two substrates by vacuum suction or the like, and a liquid crystal layer having a predetermined thickness is formed. Is formed.

Next, as shown in the step (5), an acrylic ultraviolet curable resin is applied as a sealing material to the liquid crystal injection port by a dispenser, and the sealing material is cured by irradiating ultraviolet rays, whereby the liquid crystal device is manufactured. It is formed.

In the above-described manufacturing method, since the ultraviolet-curable resin is used for the sealing material and the conductive material, the sealing material and the conductive material can be cured at one time, and the manufacturing efficiency is high.

(Electronic Equipment) Hereinafter, a case where the above-described liquid crystal device is used as a light valve of a projection display device as an electronic equipment will be described.

As an example of an electronic apparatus using the above-described liquid crystal device, a configuration of a projection display device will be described with reference to FIG. In FIG. 6, a projection display device 1100 includes:
A light source 920, a uniform illumination optical system 923 for uniformizing light emitted from the light source 920, and the uniform illumination optical system 9
A color separation optical system 92 as a color separation unit that separates the light flux W emitted from the light into red (R), green (G), and blue (B).
4, a light guide system 927 for guiding the B color light separated by the color separation optical system 924 to a predetermined optical path, and respective color light fluxes R, G, B
Light valves 925 as modulation means for modulating light
R, 925G, and 925B; a color combining prism 910 as a color combining unit that recombines the modulated color light flux;
A projection lens unit 906 is provided as projection means for enlarging and projecting the combined light beam onto the surface of the projection surface 100.

The uniform illumination optical system 923 includes two lens plates 921 and 922 and a reflection mirror 931. The two lens plates 921 and 922 are arranged so as to be orthogonal to each other with the reflection mirror 931 interposed therebetween. Uniform illumination optical system 923
The two lens plates 921 and 922 each include a plurality of rectangular lenses arranged in a matrix. The light beam emitted from the light source 920 is divided into a plurality of partial light beams by the rectangular lens of the first lens plate 921. These partial luminous fluxes are divided into three light valves 925R and 925 by the rectangular lens of the second lens plate 922.
G, superimposed near 925B. Therefore, by using the uniform illumination optical system 923, the three light valves 925R, 925G, and 925B are illuminated with uniform illumination light even when the light source 920 has an uneven illuminance distribution in the cross section of the emitted light beam. It is possible to do.

Each color separation optical system 924 includes a blue-green reflecting dichroic mirror 941, a green reflecting dichroic mirror 942, and a reflecting mirror 943. First, in the blue-green reflecting dichroic mirror 941, the blue light beam B and the green light beam G included in the light beam W are reflected at right angles, and head toward the green reflecting dichroic mirror 942. The red light beam R passes through the mirror 941, is reflected at a right angle by the rear reflection mirror 943, and is emitted from the emission unit 944 of the red light beam R to the prism unit 910 side.

Next, a green reflecting dichroic mirror 942
Of the blue and green light fluxes B and G reflected by the blue-green reflection dichroic mirror 941,
Only the green light beam G is reflected at a right angle, and is emitted from the emission unit 945 of the green light beam G to the color combining optical system side. The blue light flux B that has passed through the green reflection dichroic mirror 942 is emitted from the emission section 946 of the blue light flux B to the light guide system 927 side. In this example, the emission portions 944 and 94 of the color light beams in the color separation optical system 924 from the emission portion of the light beam W of the uniform illumination optical element.
The distances to 5,946 are set to be substantially equal.

The red and green luminous flux R of the color separation optical system 924
Condensing lenses 951 and 952 are arranged on the emission sides of the G emission sections 944 and 945, respectively. Therefore,
The red and green luminous fluxes R and G emitted from the respective emission sections are incident on these condenser lenses 951 and 952 and are parallelized.

The red and green luminous fluxes R and G thus collimated enter the light valves 925R and 925G and are modulated to add image information corresponding to each color light. That is, the switching of these liquid crystal devices is controlled by a driving unit (not shown) according to the image information, so that each color light passing therethrough is modulated. On the other hand, the blue light flux B is guided to the corresponding light valve 925B via the light guide system 927, where it is similarly modulated according to image information. Note that the light valves 925R, 925G, and 925B of this example further include incident-side polarizing means 960R, 960G, and 960B, and output-side polarizing means 961R, 961G, and 961B, respectively, and liquid crystal devices 962R and 962G disposed therebetween. , 962B.

The light guide system 927 includes a light emitting portion 94 for the blue light beam B.
No. 6, a condenser lens 954 disposed on the exit side, an incident-side reflection mirror 971, an exit-side reflection mirror 972, an intermediate lens 973 disposed between these reflection mirrors, and a front side of the light valve 925B. And a condenser lens 953. The blue light flux B emitted from the condenser lens 946 is transmitted through the light guide system 927 to the liquid crystal device 962B.
And modulated. The optical path length of each color beam, that is,
Each liquid crystal device 962R, 962G, 9
The distance to 62B is the longest for the blue luminous flux B, and therefore the loss of light quantity of the blue luminous flux is the largest. However, by interposing the light guide system 927, the loss of light amount can be suppressed.

Each light valve 925R, 925G, 92
The color light fluxes R, G, and B modulated through 5B are incident on a color combining prism 910, where they are combined. The light combined by the color combining prism 910 is enlarged and projected on the surface of the projection surface 100 at a predetermined position via the projection lens unit 906.

In the projection type display device of this embodiment, the liquid crystal device 96
Since high-quality liquid crystal devices are used for the 2R, 962G, and 962B, display quality can be improved.

[Brief description of the drawings]

FIG. 1 is an equivalent circuit of various elements, wiring, and the like provided in a plurality of pixels in a matrix forming a display area in an embodiment of a liquid crystal device.

FIG. 2 is a plan view of a TFT array substrate in each embodiment of the liquid crystal device together with components formed thereon as viewed from a counter substrate side.

FIG. 3 is a sectional view taken along line HH ′ in FIG. 2;

FIG. 4 is a cross-sectional view of a display region, a seal region, and a conductive material forming region of the liquid crystal device according to the embodiment.

FIG. 5 is a diagram illustrating a manufacturing process of the liquid crystal device in the embodiment.

FIG. 6 is a configuration diagram of a projection display device which is an example of an electronic device using a liquid crystal device.

FIG. 7 is a graph showing a relationship between a difference between a particle diameter of conductive particles and a distance between substrates, and a conduction resistance (a vertical conduction resistance) between a counter electrode and a conduction pad.

FIG. 8 is a graph showing the relationship between the content of conductive particles and the conduction resistance (vertical conduction resistance) between the counter electrode and the conduction pad.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... TFT array substrate 16, 22 ... Orientation film 20 ... Counter substrate 21 ... Counter electrode 50 ... Liquid crystal layer 52 ... Sealing material 60 ... Glass substrate 90 ... Quartz substrate 110 ... Conductive particles 111 ... Resin 112 ... Conductive material 113 ... Glass Ball 114 Gold coating layer 120 Conductive pad 121 First conductive pad 122 Second conductive pad 200 Liquid crystal device 906 Projection lens unit 910 Color synthesis prism 920 Light source 924 Color separation means 925R, 925G , 925B ... Light valve

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G09F 9/00 343 G09F 9/00 348L 5G435 348 360 360D 360 G02F 1/136 500 H01L 29/786 H01L 29/78 612C // G02F 1/13357 G02F 1/1335 530 F-term (reference) 2H088 EA15 FA10 FA16 FA24 FA30 GA02 HA13 HA14 HA22 HA25 HA28 JA05 MA01 MA05 MA06 2H091 FA05X FA14Z FA15Z FA26X FA29Z FA35Y FA41Z FD07 LA13MA03 2H092 GA37 GA38 GA39 GA48 GA49 GA50 GA51 HA16 HA17 JA25 JA29 JA38 JA42 JA44 JA48 JB13 JB23 JB32. EA04 EA05 EA07 EB02 EC02 ED05 ED14 ED15 FA01 FA02 FB 12 FB15 GB01 JA01 JA08 5F110 AA30 BB01 CC02 DD03 DD13 DD14 EE37 GG02 GG13 HM15 HM19 NN02 NN46 NN73 5G435 AA16 AA17 BB12 BB15 BB17 CC09 CC12 DD05 EE25 EE42 FF05 FF13 GG02 GG04 GG28

Claims (13)

[Claims] A first substrate having a conductive film; a second substrate having a conduction pad disposed opposite to the first substrate with a predetermined gap therebetween; and a conductive pad opposed to the conductive film; And a conductive material in which conductive particles are dispersed in a resin that electrically connects the conductive pad to the conductive pad.The conductive film and the conductive pad include the conductive material. An electro-optical device, wherein the electro-optical device is pressure-bonded via a conductor and electrically connected by the conductive particles. 2. A first organic insulating film is disposed on the first substrate so as to cover the conductive film, and a second organic insulating film is disposed on the second substrate so as to cover the conduction pad. The electro-optical device according to claim 1, wherein the conductive particles penetrate the first organic insulating film and the second organic insulating film. 3. The method according to claim 1, wherein the conductive particles before the pressure bonding have a distance of 0.2 to 0.8 from the distance between the conductive film and the conductive pad.
The electro-optical device according to claim 1, wherein the electro-optical device has a diameter larger by μm. 4. The electro-optical device according to claim 1, wherein the conductive particles are formed by forming a metal coating on a glass ball surface. 5. The electro-optical device according to claim 1, wherein the conductive particles are contained in the conductive material in a ratio of 10 to 40% by weight. 6. A region formed between the first substrate and the second substrate along a peripheral portion of the substrate, and a region formed by the first substrate, the second substrate, and the seal material. The electro-optical device according to any one of claims 1 to 5, further comprising a liquid crystal held in the device. 7. The resin of the sealing material and the conductive material,
7. The electro-optical device according to claim 6, comprising an ultraviolet curable resin. 8. The electro-optical device according to claim 1, wherein the conductive particles are an elastic body. 9. The conductive film or the conduction pad,
The electro-optical device according to any one of claims 1 to 8, wherein the electro-optical device includes aluminum. 10. A first substrate having a conductive electrode, a second substrate disposed opposite to the first substrate and having a conductive electrode facing the conductive electrode of the first substrate, and a conductive electrode of the first substrate. And a conductive material made of conductive particles for electrically connecting the conductive electrode of the second substrate to the conductive electrode of the second substrate, wherein the conductive electrode of the first substrate and the conductive electrode of the second substrate are electrically connected to each other. An electro-optical device, wherein a material is crimped and electrically connected via the conductive material. 11. An organic insulating film is disposed on at least one of the first substrate and the second substrate on the conductive electrode,
The electro-optical device according to claim 10, wherein the conductive material penetrates the organic insulating film to electrically connect the conductive electrode of the first substrate and the conductive electrode of the second substrate. 12. A light valve having the electro-optical device according to claim 1, which modulates light emitted from the light source, and light modulated by the light valve. An electronic apparatus, comprising: a projection optical system that performs projection. 13. A light source, a color separation unit that separates light emitted from the light source into a plurality of color lights, and each of the color lights separated by the color separation unit is modulated. A light valve including the electro-optical device according to claim 1, a color combining unit that combines the color lights modulated by the light valve, and a projection unit that projects the light combined by the color combining unit. Electronic equipment characterized by the following.