JP2002009515A - Frequency adjustment method for dielectric resonator, filter, duplexer and communication unit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plane circuit type dielectric resonator where minute lines are formed on the surface of a dielectric board and whose frequency can be adjusted even when the resonator is sealed with a cap so as to easily configure a filter and a duplexer having a desired frequency characteristic and also a communication unit provided with these. SOLUTION: A multiple spiral electrode 22 is formed by thin film fine processing on the surface of the dielectric board 1 and a ground electrode 3 is formed on the lower face to configure a multiple spiral resonator. A removal section 15 is formed by removing a prescribed amount of a dielectric material from a ground electrode forming side of the dielectric board 1 on which the electrode by the thin film fine processing is not formed in the time of frequency adjustment. The resonance frequency can be adjusted by the removed amount of the dielectric material.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for adjusting a frequency of a dielectric resonator in a microwave band or a millimeter wave band, a filter, and the like, which are used for wireless communication and transmission and reception of electromagnetic waves.
The present invention relates to a duplexer and a communication device.

[0002]

2. Description of the Related Art Conventionally, as a method of adjusting the frequency of a dielectric resonator, Japanese Patent Application Laid-Open Nos. 8-56107 and 9-461 have been disclosed.
No. 32 and JP-A-11-122006 are disclosed.

In the prior art, an electrode for forming a resonator is formed on the surface of a dielectric substrate, and the frequency is adjusted by trimming the electrode on the surface of the dielectric substrate. In a device in which a surface electrode is formed on the surface of a dielectric substrate, frequency adjustment is performed by shaving the vicinity of the surface electrode on the surface of the dielectric substrate. In a filter having a microstrip line resonator formed on the upper surface of a dielectric substrate, a frequency adjustment is performed by forming a dielectric layer for adjustment so as to cover the entire resonator.

[0004]

However, in the above method, it is difficult to perform trimming without adversely affecting the electrode pattern when the electrode pattern is formed by fine processing of a thin film having a thickness of about 10 μm or less.
In addition, since the adjustment can be performed only before sealing the dielectric substrate surface with a cap etc., if the frequency changes before and after the cap is sealed, consider the frequency change due to sealing. Adjustments need to be made. In the above method, the dielectric layer must be formed before sealing with a cap, etc., so if the frequency changes before and after sealing, adjust the frequency with the sealing in mind. Need to do.

SUMMARY OF THE INVENTION An object of the present invention is to solve these problems and to provide a desired frequency even in a planar circuit type dielectric resonator in which fine lines are formed on the surface of a dielectric substrate, and even after sealing with a cap. An object of the present invention is to provide a method of adjusting the frequency of a dielectric resonator to obtain characteristics, a filter and a duplexer capable of adjusting the frequency, and a communication device provided with them.

[0006]

SUMMARY OF THE INVENTION According to the present invention, when adjusting the frequency of a planar circuit type dielectric resonator in which electrodes are formed on a surface of a dielectric substrate by thin film fine processing, a part of the dielectric substrate is adjusted. By removing the dielectric substrate from the surface other than the surface on which the electrode is formed by the thin film microfabrication, the resonance frequency is adjusted in the upward direction. In this way, the frequency can be adjusted by removing the dielectric part of the dielectric substrate from the surface other than the surface on which the thin film microfabrication has been performed, making it possible to adjust the frequency without damaging the fine electrode pattern on the dielectric substrate surface And

Further, the present invention adjusts the resonance frequency in a decreasing direction by filling a dielectric formed in a hole formed on a surface other than a surface on which an electrode is formed by thin film microfabrication of a dielectric substrate. Also in this case, the operation is performed on the dielectric substrate from a surface other than the surface on which the thin film microfabrication has been performed, and the frequency can be adjusted without damaging the fine electrode pattern on the surface of the dielectric substrate.

According to the above-mentioned frequency adjusting method, the present invention can be applied to a dielectric resonator device suitable for adjusting the resonance frequency in a decreasing direction. Alternatively, what has been once adjusted in the upward direction can be adjusted again in the downward direction.

As the electrode formed by the above-mentioned thin film fine processing, for example, both ends of a plurality of spiral lines are distributed on a substantially inner circumference and an outer circumference around a predetermined point on a substrate, respectively. It is assumed that the tracks are arranged so as not to cross each other. Thus, even in the case of a resonator having a plurality of multiplexed spiral lines, the frequency can be adjusted without cutting the line length of each line.

Further, according to the present invention, the frequency is adjusted by removing a portion of the dielectric substrate while the cap is placed on the dielectric substrate. As a result, even in a dielectric resonator device in which the frequency characteristics change when the cap is placed, the final frequency can be adjusted in the state of the completed product with the cap placed.

Further, the present invention provides a method for manufacturing a semiconductor device, comprising the steps of:
In a filter including a planar circuit type dielectric resonator having electrodes formed by thin-film micromachining and a base material on which the dielectric resonator is mounted, a filter is formed on a surface opposite to a surface on which electrodes are formed by thin-film micromachining. A hole is previously formed in the base material that is in contact with the base material. This facilitates removal of a predetermined amount of the dielectric portion of the dielectric resonator.

Further, the present invention provides a method for manufacturing a semiconductor device, comprising the steps of:
In a filter including a planar circuit type dielectric resonator having electrodes formed by thin-film micromachining and a base material on which the dielectric resonator is mounted, a filter is formed on a surface opposite to a surface on which electrodes are formed by thin-film micromachining. A hole for filling a dielectric for frequency adjustment is formed in advance. This constitutes a dielectric resonator whose frequency can be adjusted in a decreasing direction.

Further, the present invention constitutes a duplexer provided with the above filter. Further, the present invention constitutes a communication device provided with the above filter or duplexer.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A dielectric resonator device according to a first embodiment and a frequency adjustment method thereof will be described with reference to FIG. In FIG. 1, reference numeral 1 denotes a rectangular plate-shaped dielectric substrate, on the upper surface of which a multi-line electrode 21 composed of a plurality of lines is formed. On the lower surface, the ground electrode 3 of substantially the entire surface is formed. Each line length of the multi-wire electrode 21 is set to と き λg when the wavelength of the used frequency is λg. Among the plurality of lines arranged in the width direction of each line, the main line at the center has a relatively large line width, and a plurality of lines having a small line width are juxtaposed on both sides thereof. Each of them functions as a half-wavelength resonance line open at both ends, and the whole of them also functions as a half-wavelength resonator. In the microwave band or the millimeter wave band, current concentration at the edge of the electrode becomes remarkable, but a plurality of lines with a narrow line width are arranged at the edges to be on both sides of the main line as described above. By doing so, in other words, by dividing the portion to be the edge into a plurality of lines having a small line width, the edge effect is reduced and the Qo of the resonator can be increased. These line widths are 10 μm or less, and are formed by thin film fine processing by photolithography.

In FIG. 1A, reference numerals 15a and 15b denote dielectric removal portions obtained as a result of frequency adjustment from the lower surface side of the dielectric substrate 1. That is, a hole is formed in the dielectric substrate 1 together with the ground electrode 3 by cutting using a luter or processing by irradiating a laser beam from the surface of the dielectric substrate 1 where the multi-line electrodes 21 are not formed. By thus partially removing the dielectric substrate, the effective permittivity of the resonance space generated in the dielectric substrate 1 between the multi-wire electrode 21 and the ground electrode 3 decreases, and the resonance frequency increases accordingly. I do.
Therefore, the resonance frequency is adjusted in the ascending direction depending on the depth or diameter (width in the expanding direction) of the removing portions 15a and 15b, and further, when the removing portions 15a and 15b are formed as linear grooves. .

FIG. 1B is a perspective view of a dielectric resonator in which the frequency of the resonator has been adjusted in a decreasing direction. 16a, 16
“b” is a dielectric material filled in a predetermined amount in a hole formed on the lower surface of the dielectric substrate 1. The configuration of the multi-line electrode 21 on the upper surface of the dielectric substrate 1 is the same as in the case of FIG.

The holes for filling the dielectrics 16a and 16b may be formed in advance when the dielectric substrate 1 is manufactured, or
As shown in FIG. 1A, the holes provided for adjusting the frequency in the upward direction are filled when the frequency is adjusted again in the downward direction. As the dielectrics 16a and 16b, a dielectric material having a small dielectric loss, such as an epoxy resin, is used.

In FIG. 1, the dielectric removing portions 15a,
15b, and the positions to be filled with the dielectrics 16a and 16b are shown on the front end face of the dielectric substrate 1,
These positions need not be at the end face of the dielectric substrate 1,
It may be provided at a central position facing the multi-wire electrode 21. Further, in FIG. 1, the position of the removing unit 15 or the position where the dielectric 16 is to be filled is set to two places, but these may be one place or a plurality of three or more places.

Next, the structure of a dielectric resonator according to a second embodiment will be described with reference to FIGS. 2A is a top view of the dielectric resonator, FIG. 2B is a longitudinal sectional view at the center thereof, and FIG. 2C is an enlarged sectional view of a circled portion in FIG. On the upper surface of the dielectric substrate 1, both ends of a plurality of lines each having a spiral shape are distributed at positions to be an inner periphery and an outer periphery around a center on the dielectric substrate,
The multiple spiral electrodes 22 are arranged so that a plurality of lines do not cross each other. A ground electrode 3 is formed on the lower surface of the dielectric substrate 1, and a multiple spiral resonator is formed by the multiple spiral electrodes 22 and the ground electrode 3 sandwiching the dielectric substrate 1. This allows
As shown in (C), the lines are arranged at equal intervals in the width direction of the lines, thereby mitigating the edge effect generated at the edge of the resonance electrode and increasing the Qo of the resonator. .

At the center of the surface (the lower surface in the figure) of the dielectric substrate 1 opposite to the surface on which the multiple spiral electrodes 22 are formed,
A removal section 15 for frequency adjustment is formed. The removing portion 15 is formed by drilling a lower surface of the dielectric substrate 1 with a luter or a laser beam. The removing unit 15
Is preferably formed at the center of the multiple spiral electrode 22 in terms of characteristics.

FIG. 3 shows the relationship between the amount of dielectric removal by the removing unit 15 and the amount of change in the resonance frequency. This means that the resonance frequency of the resonator shown in FIG. 2 is about 2 GHz, the dielectric removal amount is represented by (the square of the hole diameter of the removal portion 15 × the depth), and the resonance before the removal portion 15 is formed. 0% frequency change
Asked. As described above, the dielectric removal amount and the resonance frequency change amount are in a substantially proportional relationship, and the dielectric removal amount for obtaining a predetermined resonance frequency characteristic is determined using this relationship. For example, the resonance frequency before frequency adjustment is measured, the ratio of the deviation from the target resonance frequency is calculated, and the necessary amount of dielectric removal (hole diameter and depth) is calculated therefrom. Drive or set the number of irradiation pulses of the laser hole. Further, the frequency measurement and the removal of the dielectric by an amount corresponding to the difference between the target frequency and the target frequency may be repeated.
Further, the size of the removing unit 15 may be gradually increased while measuring the resonance frequency of the resonator until a desired resonance frequency is obtained.

FIG. 4 is a diagram showing the configuration of the dielectric resonator according to the third embodiment. (A) is a top view, (B) is a longitudinal cross-sectional view at the center, and (C) is an enlarged view of a circle portion in (B). Unlike the one shown in FIG. 3, in this example,
The dielectric 16 is filled in a hole formed on the lower surface of the dielectric substrate 1. The effective dielectric constant in the resonance region of the dielectric substrate 1 sandwiched between the multiple spiral lines 22 on the upper surface and the ground electrode 3 on the lower surface is changed by the filling amount and the relative dielectric constant of the dielectric 16, thereby determining the resonance frequency. . For example, when the relative permittivity of the dielectric 16 to be filled is the same as the relative permittivity of the dielectric substrate 1,
The amount of change in the resonance frequency with respect to the filling amount of No. 6 has the same relationship if the horizontal axis shown in FIG. 3 is replaced with the dielectric filling amount and the vertical axis is replaced with the negative value of the resonance frequency change amount. If the relative permittivity of the dielectric 16 to be filled is smaller than that of the dielectric substrate 1, the slope of the straight line shown in FIG. 3 becomes smaller. Conversely, if the relative permittivity of the dielectric 16 is larger than that of the dielectric substrate 1, Becomes larger. If the relationship between the amount of change in the resonance frequency and the filling amount of the dielectric is determined in advance, the dielectric 16 may be filled into the hole by a dispenser or the like by an amount corresponding to the ratio of the resonance frequency to be adjusted.

FIG. 5 is a diagram showing a dielectric filter according to a fourth embodiment and a method of adjusting the frequency thereof. (A) is a top view of a dielectric filter, (B) is a central longitudinal sectional view thereof. However, in the top view shown in (A), the cap 13 covering the upper part is shown in a see-through state. On the upper surface of the dielectric substrate 1a, three multiple spiral electrodes 22a, 22b,
22c, and the ground electrode 3 is formed on the lower surface. Thus, three multiplex spiral resonators are formed. Further, on the upper surface of the dielectric substrate 1, an outer peripheral coupling electrode 14 that is coupled to the multiple spiral electrodes 22a and 22c at the outer peripheral portions is formed.

In FIG. 5, reference numeral 6 denotes an insulating substrate such as an alumina substrate or a glass epoxy substrate, on which bonding pads 10 are formed on the upper surface and ground electrodes 3 are formed on the lower surface. The dielectric substrate 1 is mounted on the upper surface of the substrate 6, and the outer peripheral coupling electrode 14 and the bonding pad 10 are connected via the bonding wire 11. The upper surface of the substrate 6 is sealed with a metal cap 13 covering the dielectric substrate 1 and the wire bonding portion. Note that input / output electrodes (not shown) are formed from the lower surface to the side surfaces of the substrate 6, and are electrically connected to the bonding pads 10.

In this way, a dielectric filter exhibiting a band-pass characteristic by the three-stage resonator is formed. The resonance frequencies of the respective resonators are removed portions 15a, 15b, 15c that reach the dielectric substrate 1 through the substrate 6 from the surface of the portion of the substrate 6 not covered by the cap 13, that is, the lower surface in the figure.
Is formed to adjust the frequency. The resonance frequency is adjusted in the same manner as in the case shown in FIG. 2 by the amount of removal of the removing portions 15a, 15b, 15c from the dielectric substrate 1. At this time, the ground electrode 3 is provided on the lower surface of the dielectric substrate 1.
Is formed, the removal amount of the removal portion with respect to the substrate 6 hardly affects the characteristics.

With the cap 13 thus covered,
In other words, since the frequency adjustment can be performed in the final finished product state, the frequency characteristics are not changed again by covering the cap after performing the frequency adjustment,
Products whose frequency characteristics fall within a desired range can be manufactured at an extremely high yield.

FIG. 6 is a diagram showing the configuration of the dielectric filter according to the fifth embodiment. Unlike the structure shown in FIG. 5, a frame-shaped substrate 6 having a large opening at the center is used, and a metal plate 7 is attached to the lower surface of the substrate 6 so that the upper surface of the metal plate 7 enters the frame of the substrate 6. , The dielectric substrate 1 is mounted.
The configuration of the dielectric substrate 1 is the same as that shown in FIG. With such a structure, the height can be reduced by the thickness of the substrate 6. Reference numerals 15a, 15b, and 15c denote removal portions for frequency adjustment. Positions corresponding to the central portions of the multiple spiral electrodes 22a, 22b, and 22c from the surface of the metal plate 7 are shown in FIG.
By removing the dielectric substrate 1 by a predetermined amount, the resonance frequency of the resonator at each stage is adjusted. According to this structure,
Since it is not necessary to provide a removal portion through the substrate 6, the removal amount for frequency adjustment is small, and the productivity is improved.

FIG. 7 is an exploded perspective view showing the structure of the filter according to the sixth embodiment. Unlike the filter shown in FIG. 6, before bonding the dielectric substrate 1 to the metal plate 7, a hole is formed in the metal plate 7 at a position immediately below the center of the multiple spiral electrode. According to such a structure, it is not necessary to provide a hole by penetrating the metal plate 7 at the time of frequency adjustment, and the cutting process is facilitated, the manufacturing process is simplified, and the productivity is improved.

In the structure shown in FIG. 7, a hole having a predetermined depth is formed in the dielectric substrate 1 at a position where a dielectric for frequency adjustment is to be filled. The frequency may be adjusted by filling the hole with a predetermined amount of dielectric.

FIG. 8 is a block diagram showing the configuration of the duplexer. Here, any of the filters shown in FIGS. 5 to 7 is used as the transmission filter and the reception filter. Alternatively, the transmission filter unit and the reception filter unit may be configured on a single dielectric substrate, and the duplexer may be configured as one component.

FIG. 9 is a block diagram showing the configuration of the communication device. Here, the duplexer having the configuration shown in FIG. 8 is used. A circuit is configured such that a transmission circuit and a reception circuit are formed on a circuit board, a transmission circuit is connected to a transmission signal input terminal, a reception circuit is connected to a reception signal output terminal, and an antenna is connected to an antenna terminal. Mount the duplexer on the board.

[0032]

According to the present invention, the frequency is adjusted by removing the dielectric portion of the dielectric substrate from the surface other than the surface on which the thin film is finely processed, so that the fine electrode pattern on the surface of the dielectric substrate can be formed. The frequency can be adjusted without causing damage.

According to the present invention, the dielectric material is filled into the holes formed on the surface of the dielectric substrate other than the surface on which the electrodes are formed by the thin film microfabrication, whereby the fine electrode on the surface of the dielectric substrate is filled. The present invention can also be applied to a dielectric resonator device suitable for adjusting the resonance frequency in a decreasing direction without damaging the pattern. In addition, it is also possible to adjust the value once adjusted in the upward direction again in the downward direction.

Further, according to the present invention, the frequency can be adjusted in a state of a finished product in which a cap is put on the dielectric substrate, so that a product within a predetermined frequency range can be manufactured at an extremely high yield.

Further, according to the present invention, a filter comprising: a planar circuit type dielectric resonator in which electrodes are formed on a surface of a dielectric substrate by thin film fine processing; and a base material on which the dielectric resonator is mounted. In, by forming in advance a hole in the base material that is in contact with the surface opposite to the surface on which the electrode is formed by thin film microfabrication, it becomes easy to remove a predetermined amount of the dielectric portion of the dielectric resonator, The productivity is improved.

Further, according to the present invention, there is provided a filter comprising: a planar circuit type dielectric resonator in which electrodes are formed on a surface of a dielectric substrate by thin film fine processing; and a base material on which the dielectric resonator is mounted. A hole for filling a dielectric for frequency adjustment is formed on the surface opposite to the surface on which the electrode is formed by thin film microfabrication, so that the frequency can be adjusted in the decreasing direction. It can be used as a vessel.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a configuration of a dielectric resonator according to a first embodiment.

FIG. 2 is a diagram showing a configuration of a dielectric resonator according to a second embodiment.

FIG. 3 is a diagram showing the relationship between the amount of dielectric removal and the amount of change in resonance frequency in the dielectric resonator.

FIG. 4 is a diagram showing a configuration of a dielectric resonator according to a third embodiment.

FIG. 5 is a diagram showing a configuration of a dielectric filter according to a fourth embodiment.

FIG. 6 is a diagram showing a configuration of a dielectric filter according to a fifth embodiment.

FIG. 7 is a diagram showing a configuration of a dielectric filter according to a sixth embodiment.

FIG. 8 is a diagram showing a configuration of a duplexer according to a seventh embodiment.

FIG. 9 is a diagram showing a configuration of a communication device according to an eighth embodiment.

[Explanation of symbols]

 Reference Signs List 1-dielectric substrate 21-multi-wire electrode 22-multiple spiral electrode 3-ground electrode 6-substrate 7-metal plate 10-bonding pad 11-bonding wire 13-cap 14-peripheral coupling electrode 15-removal part 16-dielectric

 ──────────────────────────────────────────────────の Continued on the front page (72) Inventor Aoji Hidaka 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto Inside Murata Manufacturing Co., Ltd. (72) Inventor Makoto Abe 2-26-10 Tenjin, Nagaokakyo-shi, Kyoto F-term in Murata Manufacturing Co., Ltd. (reference) 5J006 HB03 HB12 HB13 JA01 LA11 MA05 NA04 NC02 PA03 PA06

Claims (8)

[Claims] 1. A method of adjusting the frequency of a planar circuit type dielectric resonator in which an electrode is formed on a surface of a dielectric substrate by thin film microfabrication, comprising: A method of adjusting the frequency of a dielectric resonator, wherein a resonance frequency is adjusted in a rising direction by removing a surface other than a surface on which an electrode is formed by processing. 2. A method for adjusting the frequency of a planar circuit type dielectric resonator in which electrodes are formed on a surface of a dielectric substrate by thin-film micromachining, the method comprising: A method for adjusting the frequency of a dielectric resonator, in which a hole formed in the surface of (1) is filled with a dielectric to adjust the resonance frequency in a decreasing direction. 3. The electrode formed by the thin film fine processing is an aggregate of a plurality of electrodes each forming a spiral shape,
Both ends of at least a part of the plurality of electrodes are distributed around a predetermined point on the dielectric substrate substantially on the inner periphery and the outer periphery of the assembly, respectively, to thereby form the plurality of electrodes. 3. The frequency adjusting method for a dielectric resonator according to claim 1 or 2, wherein the dielectric resonators are arranged so as not to cross each other. 4. The frequency adjustment of a dielectric resonator according to claim 1, wherein a portion of the dielectric substrate is removed or a dielectric is filled while a cap is placed on the dielectric substrate. Method. 5. A filter comprising: a planar circuit type dielectric resonator in which electrodes are formed on a surface of a dielectric substrate by thin film microfabrication; and a base material on which the dielectric resonator is mounted. A filter in which holes are previously formed in the base material that is in contact with a surface opposite to a surface on which the electrode is formed. 6. A filter comprising: a planar circuit type dielectric resonator in which electrodes are formed on a surface of a dielectric substrate by thin film microfabrication; and a base material on which the dielectric resonator is mounted. A filter having a hole for filling a dielectric material for frequency adjustment on a surface other than a surface on which an electrode is formed. 7. A duplexer comprising the filter according to claim 5 provided as a transmission filter or a reception filter, or as both filters. 8. The filter according to claim 5, wherein
A communication device comprising the duplexer according to claim 7.