JP2001506375A5 - - Google Patents

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Publication number
JP2001506375A5
JP2001506375A5 JP1998527310A JP52731098A JP2001506375A5 JP 2001506375 A5 JP2001506375 A5 JP 2001506375A5 JP 1998527310 A JP1998527310 A JP 1998527310A JP 52731098 A JP52731098 A JP 52731098A JP 2001506375 A5 JP2001506375 A5 JP 2001506375A5
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JP
Japan
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JP1998527310A
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JP3789138B2 (ja
JP2001506375A (ja
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Priority claimed from PCT/EP1997/007054 external-priority patent/WO1998027461A1/en
Publication of JP2001506375A publication Critical patent/JP2001506375A/ja
Publication of JP2001506375A5 publication Critical patent/JP2001506375A5/ja
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Publication of JP3789138B2 publication Critical patent/JP3789138B2/ja
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Figure 2001506375
Figure 2001506375
Figure 2001506375
JP52731098A 1996-12-17 1997-12-16 有機極性溶媒を含有するフォトレジスト組成物中の混入金属イオンをイオン交換により低減する方法 Expired - Fee Related JP3789138B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US76874996A 1996-12-17 1996-12-17
US08/768,749 1996-12-17
PCT/EP1997/007054 WO1998027461A1 (en) 1996-12-17 1997-12-16 A method for reducing metal ion contaminants in photoresist compositions containing an organic polar solvent by ion exchange

Publications (3)

Publication Number Publication Date
JP2001506375A JP2001506375A (ja) 2001-05-15
JP2001506375A5 true JP2001506375A5 (ja) 2005-08-11
JP3789138B2 JP3789138B2 (ja) 2006-06-21

Family

ID=25083379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52731098A Expired - Fee Related JP3789138B2 (ja) 1996-12-17 1997-12-16 有機極性溶媒を含有するフォトレジスト組成物中の混入金属イオンをイオン交換により低減する方法

Country Status (6)

Country Link
EP (1) EP0948756B1 (ja)
JP (1) JP3789138B2 (ja)
KR (1) KR100477401B1 (ja)
CN (1) CN1244930A (ja)
DE (1) DE69711433T2 (ja)
WO (1) WO1998027461A1 (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5936071A (en) * 1998-02-02 1999-08-10 Clariant Finance (Bvi) Limited Process for making a photoactive compound and photoresist therefrom
TWI442694B (zh) 2003-05-30 2014-06-21 Asml Netherlands Bv 微影裝置及元件製造方法
JP5458538B2 (ja) * 2007-12-12 2014-04-02 日立化成株式会社 半導体装置及びその製造方法
WO2010005518A1 (en) 2008-07-08 2010-01-14 Dow Global Technologies Inc. Acid removal in cleaning processes
JP5541766B2 (ja) * 2009-05-19 2014-07-09 株式会社ダイセル フォトレジスト用高分子化合物の製造方法
CN102169107A (zh) * 2011-01-15 2011-08-31 博嘉圣(福州)微电子科技有限公司 芯片钠离子沾污失效分析实现方法
JP5686217B1 (ja) 2014-04-30 2015-03-18 住友ベークライト株式会社 感光性樹脂材料および樹脂膜
JP6349943B2 (ja) * 2014-05-13 2018-07-04 三菱ケミカル株式会社 化合物の精製方法、及び高分子化合物の製造方法
JP6433503B2 (ja) * 2014-09-02 2018-12-05 富士フイルム株式会社 非化学増幅型レジスト組成物、非化学増幅型レジスト膜、パターン形成方法、及び、電子デバイスの製造方法
WO2018044703A1 (en) * 2016-08-30 2018-03-08 Rohm And Haas Company Low-sodium resin
CN109426070A (zh) * 2017-08-25 2019-03-05 京东方科技集团股份有限公司 光刻胶组合物、金属图案以及阵列基板的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01228560A (ja) * 1988-03-08 1989-09-12 Hitachi Chem Co Ltd 不純金属成分の低減された溶液の製造法
KR100242920B1 (ko) * 1992-03-06 2000-03-02 잰대머 저수준의 금속이온을 갖는 포토레지스트(rhotoresists having a low level of metal ions)
JP3727335B2 (ja) * 1992-11-25 2005-12-14 Azエレクトロニックマテリアルズ株式会社 フォトレジスト用底部反射防止塗料における金属イオンの低減
US5350714A (en) * 1993-11-08 1994-09-27 Shipley Company Inc. Point-of-use purification
US5525315A (en) * 1993-12-07 1996-06-11 Shipley Company, L.L.C. Process for removing heavy metal ions with a chelating cation exchange resin
WO1996012214A1 (en) * 1994-10-12 1996-04-25 Hoechst Celanese Corporation Low metal ion photoactive compounds and photoresists compositions produced therefrom
US5614352A (en) * 1994-12-30 1997-03-25 Hoechst Celanese Corporation Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin

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