JP2001506375A5 - - Google Patents
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- Publication number
- JP2001506375A5 JP2001506375A5 JP1998527310A JP52731098A JP2001506375A5 JP 2001506375 A5 JP2001506375 A5 JP 2001506375A5 JP 1998527310 A JP1998527310 A JP 1998527310A JP 52731098 A JP52731098 A JP 52731098A JP 2001506375 A5 JP2001506375 A5 JP 2001506375A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Description
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76874996A | 1996-12-17 | 1996-12-17 | |
US08/768,749 | 1996-12-17 | ||
PCT/EP1997/007054 WO1998027461A1 (en) | 1996-12-17 | 1997-12-16 | A method for reducing metal ion contaminants in photoresist compositions containing an organic polar solvent by ion exchange |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2001506375A JP2001506375A (ja) | 2001-05-15 |
JP2001506375A5 true JP2001506375A5 (ja) | 2005-08-11 |
JP3789138B2 JP3789138B2 (ja) | 2006-06-21 |
Family
ID=25083379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52731098A Expired - Fee Related JP3789138B2 (ja) | 1996-12-17 | 1997-12-16 | 有機極性溶媒を含有するフォトレジスト組成物中の混入金属イオンをイオン交換により低減する方法 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0948756B1 (ja) |
JP (1) | JP3789138B2 (ja) |
KR (1) | KR100477401B1 (ja) |
CN (1) | CN1244930A (ja) |
DE (1) | DE69711433T2 (ja) |
WO (1) | WO1998027461A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5936071A (en) * | 1998-02-02 | 1999-08-10 | Clariant Finance (Bvi) Limited | Process for making a photoactive compound and photoresist therefrom |
TWI442694B (zh) | 2003-05-30 | 2014-06-21 | Asml Netherlands Bv | 微影裝置及元件製造方法 |
JP5458538B2 (ja) * | 2007-12-12 | 2014-04-02 | 日立化成株式会社 | 半導体装置及びその製造方法 |
WO2010005518A1 (en) | 2008-07-08 | 2010-01-14 | Dow Global Technologies Inc. | Acid removal in cleaning processes |
JP5541766B2 (ja) * | 2009-05-19 | 2014-07-09 | 株式会社ダイセル | フォトレジスト用高分子化合物の製造方法 |
CN102169107A (zh) * | 2011-01-15 | 2011-08-31 | 博嘉圣(福州)微电子科技有限公司 | 芯片钠离子沾污失效分析实现方法 |
JP5686217B1 (ja) | 2014-04-30 | 2015-03-18 | 住友ベークライト株式会社 | 感光性樹脂材料および樹脂膜 |
JP6349943B2 (ja) * | 2014-05-13 | 2018-07-04 | 三菱ケミカル株式会社 | 化合物の精製方法、及び高分子化合物の製造方法 |
JP6433503B2 (ja) * | 2014-09-02 | 2018-12-05 | 富士フイルム株式会社 | 非化学増幅型レジスト組成物、非化学増幅型レジスト膜、パターン形成方法、及び、電子デバイスの製造方法 |
WO2018044703A1 (en) * | 2016-08-30 | 2018-03-08 | Rohm And Haas Company | Low-sodium resin |
CN109426070A (zh) * | 2017-08-25 | 2019-03-05 | 京东方科技集团股份有限公司 | 光刻胶组合物、金属图案以及阵列基板的制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01228560A (ja) * | 1988-03-08 | 1989-09-12 | Hitachi Chem Co Ltd | 不純金属成分の低減された溶液の製造法 |
KR100242920B1 (ko) * | 1992-03-06 | 2000-03-02 | 잰대머 | 저수준의 금속이온을 갖는 포토레지스트(rhotoresists having a low level of metal ions) |
JP3727335B2 (ja) * | 1992-11-25 | 2005-12-14 | Azエレクトロニックマテリアルズ株式会社 | フォトレジスト用底部反射防止塗料における金属イオンの低減 |
US5350714A (en) * | 1993-11-08 | 1994-09-27 | Shipley Company Inc. | Point-of-use purification |
US5525315A (en) * | 1993-12-07 | 1996-06-11 | Shipley Company, L.L.C. | Process for removing heavy metal ions with a chelating cation exchange resin |
WO1996012214A1 (en) * | 1994-10-12 | 1996-04-25 | Hoechst Celanese Corporation | Low metal ion photoactive compounds and photoresists compositions produced therefrom |
US5614352A (en) * | 1994-12-30 | 1997-03-25 | Hoechst Celanese Corporation | Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin |
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1997
- 1997-12-16 CN CN97181389A patent/CN1244930A/zh active Pending
- 1997-12-16 EP EP97952948A patent/EP0948756B1/en not_active Expired - Lifetime
- 1997-12-16 JP JP52731098A patent/JP3789138B2/ja not_active Expired - Fee Related
- 1997-12-16 KR KR10-1999-7005411A patent/KR100477401B1/ko not_active IP Right Cessation
- 1997-12-16 DE DE69711433T patent/DE69711433T2/de not_active Expired - Fee Related
- 1997-12-16 WO PCT/EP1997/007054 patent/WO1998027461A1/en active IP Right Grant