JP2001332683A - Laminated semiconductor device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a laminated semiconductor device for high-density mounting with no significant increase in mounting area compared to the case when a single semiconductor device is mounted. SOLUTION: A first semiconductor device 10 is mounted on one surface of a wiring board 30 comprising a film-like board while a second semiconductor device 20 is mounted on the other surface of the wiring board 30. Related to the wiring board 30, a part except for the region held between the first and second semiconductor devices 10 and 20 is bent along the second semiconductor device 20 so that a part of the wiring board 30 is arranged on the rear surface of the second semiconductor device 20, with a solder ball 40 fitted to a connection terminal provided to the wiring board 30 arranged on the rear surface of the second semiconductor device 20. The first and second semiconductor devices 10 and 20 can be electrically connected to an external terminal through the wiring board 30 and the solder ball 40.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a stacked semiconductor device capable of high-density mounting and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, a stacked semiconductor device having a structure in which a plurality of semiconductor devices are stacked has been proposed as a semiconductor device capable of high-density mounting in response to miniaturization of electronic devices and increase in capacity of memories and the like. I have.

[0003] For example, Japanese Patent Application Laid-Open No.
A stacked semiconductor device (stacked semiconductor device) capable of high-density mounting without increasing the mounting area as compared with the case of mounting a single semiconductor device is disclosed.

FIG. 13 shows a schematic sectional structure of a stacked semiconductor device disclosed in Japanese Patent Application Laid-Open No. H11-97619, and the structure of the stacked semiconductor device 100 will be described.

The stacked semiconductor device 100 has a structure in which a first semiconductor device (upper semiconductor device in the drawing) 110 and a second semiconductor device (semiconductor device in lower drawing) 120 are stacked.

[0006] A plurality of leads 111 for inputting and outputting signals to and from a semiconductor element incorporated in the first semiconductor device 110 are arranged on the left and right side surfaces of the first semiconductor device 110 in the figure. In addition, the second semiconductor device 120 has a SOB (Sm
all the outline balls), on the back surface (lower surface in the figure) of the semiconductor device 120, at the left and right ends in the figure, input and output signals to and from a semiconductor element built in the second semiconductor device 120. Lead 12 for
The solder balls 122 serving as connection terminals are attached to the leads 121.

As shown in FIG. 13, a first semiconductor device 1
The lead 111 provided on the connector 10 is bent in a J-shape, and has a structure in which the lead 111 wraps the solder ball 122.

In the stacked semiconductor device 100, the second
Of the first semiconductor device 110 is held inside the lead 111 of the first semiconductor device 110, so that the mounting area does not increase as compared with the case where the first semiconductor device 110 is mounted alone, and By stacking the two semiconductor devices 120, high-density mounting is possible.

[0009]

In the above-mentioned stacked semiconductor device 100, after the first semiconductor device 110 and the second semiconductor device 120 are stacked, the lead 111 is bent into a J-shape, and the lead 111 is used. The first semiconductor device 11 is manufactured by enclosing the solder ball 122.
To stack the lead 111 in a J-shape after stacking the 0 and the second semiconductor device 120, a special processing machine and a dedicated mounting machine are required.

In the stacked semiconductor device 100, different types of semiconductor devices are used as the first semiconductor device 110 and the second semiconductor device.
When manufacturing the semiconductor device 0, it is necessary to separately manage semiconductor devices of different types, and there is a problem that it takes time and effort to manage parts.

Accordingly, the present invention solves the above-mentioned problems, and enables high-density mounting without significantly increasing the mounting area as compared with a case where a semiconductor device is mounted alone, and a special processing machine or a special processing machine. An object of the present invention is to provide a stacked semiconductor device which can be easily manufactured without the need for a mounting machine, and does not require time and effort for component management during manufacturing, and a method for manufacturing the same.

[0012]

Means for Solving the Problems The inventors of the present invention have conducted research to solve the above-mentioned problems, and as a result, have arrived at the invention of the following stacked semiconductor device.

A stacked semiconductor device according to the present invention is a stacked semiconductor device in which a first semiconductor device and a second semiconductor device are stacked, wherein the first semiconductor device includes a wiring and a connection terminal. The second semiconductor device is mounted on one surface of the substrate, the second semiconductor device is mounted on the other surface of the wiring substrate, and the first semiconductor device and the second semiconductor device are connected via the wiring substrate. And electrically connected to each other.

Further, the first semiconductor device and the second semiconductor device each include a lead,
The lead is electrically connected to the connection terminal of the wiring board.

Further, the invention is characterized in that the wiring substrate is formed of a film-like substrate having a larger area than the first and second semiconductor devices.

In the wiring board, a portion other than a portion sandwiched between the first semiconductor device and the second semiconductor device is bent along the second semiconductor device, and A part is arranged on the back side of the second semiconductor device.

In order to maintain the shape of the bent wiring board, a part of the wiring board disposed on the back side of the second semiconductor device is made of a heat-resistant tape, an adhesive or the like. It is desirable that the semiconductor device is fixed to the back surface of the second semiconductor device via an adhesive member.

Further, a solder ball is attached to a part of the wiring board disposed on the back side of the second semiconductor device, and the first and second semiconductor devices are connected to the wiring board and the solder. It is characterized by being electrically connectable to an external terminal via a ball.

The above-described stacked semiconductor device of the present invention has a first
The semiconductor device is mounted on one surface of the wiring substrate, the second semiconductor device is mounted on the other surface of the wiring substrate, and is disposed on the back surface side of the second semiconductor device. Since the solder balls are attached to the wiring board and can be electrically connected to the external terminals via the solder balls, the portions connected to the external terminals are in the mounting regions of the first and second semiconductor devices. It is located in.

Therefore, the stacked semiconductor device of the present invention enables high-density mounting without greatly increasing the mounting area as compared with the case where the semiconductor device is mounted alone.

Since the thickness of the wiring board made of a film-like substrate is small, the height of the stacked semiconductor device of the present invention is
The height is almost the same as the height when the first semiconductor device and the second semiconductor device are stacked in two stages.

Furthermore, in the stacked semiconductor device of the present invention, the same semiconductor device can be used as the first semiconductor device and the second semiconductor device. No need for parts management.

The above-described stacked semiconductor device of the present invention can be manufactured as follows.

First, the first semiconductor device is mounted on one surface of the wiring board, and the leads of the first semiconductor device and the connection terminals of the wiring board are electrically connected to each other. After the first semiconductor device is electrically connected to the wiring board, the second semiconductor device is mounted on the other surface of the wiring board, and the lead of the second semiconductor device is connected to the first semiconductor device. By electrically connecting a connection terminal of a wiring board and electrically connecting the second semiconductor device and the wiring board, the first semiconductor device and the second semiconductor device are connected to each other by the wiring. It is electrically connected via the substrate.

Next, a portion of the wiring board except for a portion sandwiched between the first semiconductor device and the second semiconductor device is bent along the second semiconductor device to form a wiring board. A part is arranged on the back side of the second semiconductor device.

Next, in order to maintain the shape of the bent wiring board, a part of the wiring board disposed on the back side of the second semiconductor device is made of a heat-resistant tape, an adhesive or the like. It is desirable that the semiconductor device is fixed to the back surface of the second semiconductor device via an adhesive member.

Finally, a stacked semiconductor device of the present invention can be manufactured by attaching a solder ball to a part of the wiring board arranged on the back side of the second semiconductor device.

As described above, the stacked semiconductor device of the present invention can be easily manufactured without requiring a special processing machine or a dedicated mounting machine.

Further, in order to enable mounting on a substrate or the like which cannot be connected via the solder ball, the wiring substrate is bent and the solder ball is mounted on the wiring substrate disposed on the back side of the second semiconductor device. Instead, a pin for external terminal connection is provided on a flat wiring board, and the first and second semiconductor devices and the external terminal are electrically connectable via the wiring board and the pin for external terminal connection. It is good.

Similarly, in the stacked semiconductor device of the present invention having such a structure, the first semiconductor device is mounted on one surface of the wiring substrate, and the second semiconductor device is mounted on the other surface of the wiring substrate. Since the semiconductor device is mounted on a surface of the semiconductor device, high-density mounting is enabled without greatly increasing the mounting area as compared with a case where the semiconductor device is mounted alone.

Since the stacked semiconductor device is provided with pins for connecting external terminals, a through-hole is provided in a mounting board or the like, and the pins for connecting external terminals are inserted into the through-holes. It has a structure that can be mounted on a substrate or the like that cannot be mounted via balls.

Further, in this stacked semiconductor device, after the first semiconductor device and the second semiconductor device are mounted on the wiring board,
It can be manufactured by providing external connection pins on the wiring board, without the need for special processing machines or dedicated mounting machines.
It can be easily manufactured.

[0033]

Next, an embodiment according to the present invention will be described in detail.

First Embodiment FIG. 1 shows a schematic structure of a stacked semiconductor device 1 according to a first embodiment of the present invention, and the structure of the stacked semiconductor device will be described.

In FIG. 1, reference numerals 10 and 20 denote a first semiconductor device (upper semiconductor device in the figure) and a second semiconductor device (lower semiconductor device in the figure), respectively. A wiring board having
Indicates a solder ball.

In the stacked semiconductor device 1, the first semiconductor device 10 and the second semiconductor device 20 are TSOP (Thin).
A semiconductor device in which a plurality of leads 11 and 21 for inputting and outputting signals to and from semiconductor elements built in the semiconductor devices 10 and 20 are arranged on two or four sides such as a small out-line package. FIG. 1 shows, as an example, a first semiconductor device 1 in which leads 11 and 21 are arranged on two side surfaces.
0 and the second semiconductor device 20 are illustrated.

The first semiconductor device 10 and the second semiconductor device 20 may be composed of different types of semiconductor devices. However, in order to save the trouble of parts management when manufacturing the stacked semiconductor device 1, As shown in FIG. 1, a first semiconductor device 1
It is desirable that the first semiconductor device 20 and the second semiconductor device 20 are formed of the same semiconductor device.

In the stacked semiconductor device 1, the first semiconductor device 10 is mounted on one surface (on the upper surface in the drawing) of the wiring substrate 30, and the second semiconductor device 20 is mounted on the wiring substrate 30. It is mounted on the other surface (on the lower surface in the figure). The first semiconductor device 10 and the second semiconductor device 20 are both mounted on the surface of the wiring board 30 such that the leads 11 and 21 are in contact with the wiring board 30.

As shown in FIG. 1, the first semiconductor device 10 and the second semiconductor device 20
The portion excluding the portion sandwiched between the second semiconductor device 20
And a part of the wiring board 30 is disposed on the back surface side (the lower surface side in the figure) of the second semiconductor device 20.

FIG. 2 shows only the wiring substrate 30 of the stacked semiconductor device 1. FIG. 3 shows a schematic cross-sectional structure in which the vicinity of the boundary between the leads 11 and 21 and the wiring board 30 is enlarged.

As shown in FIG. 2, a plurality of connection terminals 31 made of metal such as copper are arranged in two rows on the upper surface of the wiring board 30 in the drawing. Similarly, although not shown on the lower surface of the wiring substrate 30, a plurality of connection terminals 32 made of metal such as copper are arranged in two rows.

As shown in FIG. 3, each connection terminal 31, 32
Are provided so as to correspond to the respective leads 11 and 21, and the leads 11 and 21 and the connection terminals 31 and 32 are electrically connected via solder portions 33 and 34. The wiring board 30 includes a plurality of wirings, not shown, and the respective connection terminals 31 and the respective connection terminals 32 are electrically connected via the wirings. Therefore, the first semiconductor device 10 and the second semiconductor device 20 are electrically connected via the wiring board 30.

FIG. 4 shows the structure of the wiring board 30 when the wiring board 30 shown in FIG. 2 is viewed from below in the figure. FIG. 5 shows a wiring type substrate 3 in the stacked semiconductor device 1.
2 shows a schematic cross-sectional structure of a portion near a bent portion of No. 0. In FIG. 5, for simplification, the solder portion 33,
34 is omitted.

As shown in FIG. 5, in the stacked semiconductor device 1, in order to maintain the shape of the bent wiring substrate 30, a part of the wiring substrate 30 disposed on the back side of the second semiconductor device 20 is formed. Is preferably fixed to the back surface of the second semiconductor device 20 via an adhesive member 36 made of a heat-resistant tape, an adhesive or the like.

As shown in FIGS. 4 and 5, a plurality of connection terminals 35 for connecting to external terminals are provided outside the portion of the wiring substrate 30 arranged on the back surface side of the second semiconductor device 20. Are provided, and a solder ball 40 is attached to each connection terminal 35.

In the stacked semiconductor device 1, the first semiconductor device 10 and the second semiconductor device 20 have a structure that can be electrically connected to external terminals via a wiring board 30 and solder balls 40. By electrically connecting the solder balls 40 to external terminals, the stacked semiconductor device 1 can be mounted on a substrate or the like.

Next, a method of manufacturing the stacked semiconductor device 1 according to the first embodiment of the present invention will be described with reference to FIGS.

FIG. 6 is a perspective view showing the structure of the first semiconductor device 10 (second semiconductor device 20) used for manufacturing the stacked semiconductor device 1. As shown in FIG. Since the structure of the first semiconductor device 10 (the second semiconductor device 20) has been described above, the description is omitted.

FIG. 7 is a perspective view showing the structure of a wiring board 30 made of a film-like substrate used for manufacturing the stacked semiconductor device 1. As shown in FIG. As shown in FIG. 7, the wiring substrate 30 before manufacturing the stacked semiconductor device 1 is a flat substrate having a larger area than the first semiconductor device 10 and the second semiconductor device 20.

A plurality of connection terminals 31 arranged in two rows are provided on the upper surface of the wiring board 30 in the drawing, and the connection terminals 31 are not shown on the lower surface in the drawing. Are provided.

The connection terminals 31 are provided at predetermined positions so that each lead 11 contacts each connection terminal 31 when the first semiconductor device 10 is set on the upper surface of the wiring board 30 in the drawing. I have. Similarly, when the second semiconductor device 20 is installed on the lower surface of the wiring board 30 in the drawing, each lead 21 is connected to each connection terminal 32.
It is provided at a predetermined position so as to contact with.

On the upper surface of the wiring board 30 in the figure, a plurality of connection terminals 35 for connecting the wiring board 30 to external terminals are provided at the left end and the right end in the figure.

First, as shown in FIG. 8, each lead 11 of the first semiconductor device 10 is electrically connected to each connection terminal 31 of the wiring board 30, and the first semiconductor device 10 is connected to the wiring board 30. It is mounted on one surface (on the upper surface in the figure).

Next, as shown in FIG. 9, each lead 21 of the second semiconductor device 20 is electrically connected to the connection terminal 32 of the wiring board, and the second semiconductor device 20 is connected to the wiring board 3.
0 is mounted on the other surface (on the lower surface in the figure).

In these steps, the leads 11 (2
A method of electrically connecting 1) to each connection terminal 31 (32) will be described.

The solder paste is printed on the surface of each connection terminal 31 (32) of the wiring board 30 and subjected to a reflow process, so that the solder is once melted and then solidified, as shown in FIG. A solder portion 33 (34) is formed between each lead 11 (21) and each connection terminal 31 (32).
According to this method, each lead 11 (21) and each connection terminal 3
1 (32) can be fixed and electrically connected via the solder portion 33 (34).

Further, as described above, the connection terminal 31
Are electrically connected to each other, the first semiconductor device 10 and the second semiconductor device 20 shown in FIG. 9 are electrically connected via the wiring board 30.

Next, as shown in FIG.
The first semiconductor device 10 and the second semiconductor device 2
0 except for the portion sandwiched by the second semiconductor device 2
The wiring board 30 is bent along 0 and a part of the wiring board 30 is arranged on the back surface side (the lower surface side in the drawing) of the second semiconductor device 20.

At this time, as shown in FIG. 5, in order to maintain the shape of the bent wiring board 30, a part of the wiring board 30 arranged on the back side of the second semiconductor device 20 is removed.
It is desirable that the semiconductor device 20 is fixed to the back surface of the second semiconductor device 20 via an adhesive member 36 made of a heat-resistant tape, an adhesive or the like.

Finally, as shown in FIG. 11, the solder balls 40 are mounted on the connection terminals 35 provided on the outside of the wiring board 30 disposed on the back side of the second semiconductor device 20, and the reflow process is performed. After the solder balls 40 are once melted and then solidified, the respective connection terminals 35 and the respective solder balls 40 are fixed and electrically connected, whereby the stacked semiconductor device 1 is manufactured.

The stacked semiconductor device 1 of the present embodiment has the first
The semiconductor device 10 is mounted on one surface of the wiring board 30, the second semiconductor device 20 is mounted on the other surface of the wiring substrate 30, and the second semiconductor device 2
0 on the wiring board 30 arranged on the back side of the solder ball 40.
Is attached and can be electrically connected to the external terminal via the solder ball 40. Therefore, the portion connected to the external terminal is located within the mounting region of the first and second semiconductor devices 10 and 20. Have been.

Therefore, the stacked semiconductor device 1 of the present invention
The semiconductor device enables high-density mounting without significantly increasing the mounting area as compared with the case where the semiconductor device is mounted alone.

The wiring substrate 3 made of a film substrate
Since the thickness of “0” is thin, the height of the stacked semiconductor device 1 of the present invention is almost the same as the height when the first semiconductor device 10 and the second semiconductor device 20 are stacked in two stages. .

Further, in the stacked semiconductor device 1 according to the present invention, the same semiconductor device can be used as the first semiconductor device 10 and the second semiconductor device 20, and therefore, when manufacturing the stacked semiconductor device 1. No need for parts management.

Further, as described in the method of manufacturing the stacked semiconductor device 1 of the present embodiment, the stacked semiconductor device 1 of the present embodiment can be easily manufactured without requiring a special processing machine or a dedicated mounting machine. Is what you can do.

Second Embodiment FIG. 12 shows a schematic structure of a stacked semiconductor device 2 according to a second embodiment of the present invention, and the structure of the stacked semiconductor device will be described. In FIG. 12, the stacked semiconductor device 1
The same components as those described above are denoted by the same reference numerals, and description thereof will be omitted.

In FIG. 12, reference numeral 50 denotes a wiring board made of a glass epoxy substrate, a ceramic substrate, or the like, provided with wiring and connection terminals. Reference numeral 60 denotes an external terminal connection pin for connecting the wiring board 50 to an external terminal.

As shown in FIG. 12, the stacked semiconductor device 2
In FIG. 5, the first semiconductor device 10 is mounted on one surface (on the upper surface in the drawing) of the wiring substrate 50, and the second semiconductor device 20 is mounted on the other surface (the lower surface in the drawing) of the wiring substrate 50. On the surface).

As in the first embodiment, the first semiconductor device 1
0 and the second semiconductor device 20 are both leads 11 and 21
Are mounted on the surface of the wiring board 50 so as to contact the wiring board 50.

Similarly to the wiring board 30 of the first embodiment, the wiring board 50 is provided with connection terminals corresponding to the leads 11 and 21, respectively. The connection terminal is fixed and electrically connected via a solder portion. Therefore, similarly to the first embodiment, the first semiconductor device 10 and the second semiconductor device 20 are electrically connected via the wiring board 50.

In the present embodiment, a plurality of external terminal connection pins 60 for connecting to external terminals are provided at the left end and the right end of the wiring board 50 in the drawing in the vertical direction in the drawing. The first semiconductor device 10 and the second semiconductor device 20 can be electrically connected to external terminals via the wiring board 50 and the external terminal connecting pins 60.

By providing through holes in a substrate or the like on which the stacked semiconductor device 2 is mounted and inserting the external terminal connecting pins 60 into the through holes, the stacked semiconductor device 2 can be mounted on the substrate or the like. .

In the stacked semiconductor device 2, similarly to the first embodiment, after the first semiconductor device 10 and the second semiconductor device 10 are sequentially mounted on the surface of the wiring board 50, It can be manufactured by attaching the external connection pins 60 to the.

The stacked semiconductor device 2 of the present embodiment has the first
Since the semiconductor device 10 is mounted on one surface of the wiring substrate 30 and the second semiconductor device 20 is mounted on the other surface of the wiring substrate 30, Compared to this, high-density mounting is enabled without significantly increasing the mounting area.

However, since the external terminal connection pins are provided outside the mounting regions of the first and second semiconductor devices 10 and 20 in the stacked semiconductor device 2, the stacked semiconductor device of the first embodiment is not used. The mounting area is larger than that of the device 1.

Since the wiring board 50 is provided with pins for connecting external terminals, the stacked semiconductor device 2 of the present embodiment can be mounted on a board or the like that cannot be mounted via solder balls. ing.

Also, in the stacked semiconductor device 2 of the present embodiment, the first semiconductor device 10 and the second semiconductor device 2
Since the same semiconductor device can be used as 0,
When manufacturing the stacked semiconductor device 2, there is no need for troublesome parts management.

The stacked semiconductor device 2 can be manufactured as described above, and can be easily manufactured without requiring a special processing machine or a dedicated mounting machine.

[0079]

As described above, according to the present invention,
It enables high-density mounting without significantly increasing the mounting area compared to the case where a semiconductor device is mounted alone, and can be easily manufactured without requiring special processing machines or dedicated mounting machines. In addition, it is possible to provide a stacked semiconductor device and a method of manufacturing the same that do not require time and effort in component management during manufacturing.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a schematic structure of a stacked semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a perspective view showing a structure of a wiring board of the stacked semiconductor device according to the first embodiment of the present invention.

FIG. 3 is an enlarged schematic cross-sectional view of a portion near a boundary between a lead and a wiring board in the stacked semiconductor device according to the first embodiment of the present invention.

FIG. 4 is a diagram when the wiring board shown in FIG. 2 is viewed from below.

FIG. 5 is a schematic cross-sectional view of a portion near a bent portion of the wiring board in the stacked semiconductor device according to the first embodiment of the present invention.

FIG. 6 is a perspective view showing a structure of a semiconductor device used in the method of manufacturing a stacked semiconductor device according to the first embodiment of the present invention.

FIG. 7 is a perspective view showing a structure of a wiring board used in the method of manufacturing the stacked semiconductor device according to the first embodiment of the present invention.

FIG. 8 is a perspective view showing a step of mounting the first semiconductor device on a wiring board in the method for manufacturing a stacked semiconductor device according to the first embodiment of the present invention.

FIG. 9 is a perspective view showing a step of mounting the second semiconductor device on the wiring board in the method of manufacturing the stacked semiconductor device according to the first embodiment of the present invention.

FIG. 10 is a perspective view showing a step of bending a wiring board in the method of manufacturing the stacked semiconductor device according to the first embodiment of the present invention.

FIG. 11 is a perspective view showing a step of attaching a solder ball to a wiring board in the method for manufacturing a stacked semiconductor device according to the first embodiment of the present invention.

FIG. 12 is a perspective view illustrating a schematic structure of a stacked semiconductor device according to a second embodiment of the present invention.

FIG. 13 is a schematic cross-sectional view showing the structure of a conventional stacked semiconductor device.

[Explanation of symbols]

 1, 2 Stacked semiconductor device 10 First semiconductor device 20 Second semiconductor device 11, 21 Lead 30, 50 Wiring board 31, 32 Connection terminal 33, 34 Solder part 35 Connection terminal 36 Adhesive member 40 Solder ball 60 External terminal Connection pins

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05K 1/18

Claims (14)

[Claims] 1. A stacked semiconductor device in which a first semiconductor device and a second semiconductor device are stacked, wherein the first semiconductor device is provided on one surface of a wiring board having a wiring and a connection terminal. Mounted, the second semiconductor device is mounted on the other surface of the wiring substrate, and the first semiconductor device and the second semiconductor device are electrically connected via the wiring substrate A stacked semiconductor device, comprising: 2. The semiconductor device according to claim 1, wherein each of the first semiconductor device and the second semiconductor device has a lead, and the lead and the connection terminal of the wiring board are electrically connected. The stacked semiconductor device according to claim 1, wherein: 3. The stacked semiconductor device according to claim 1, wherein said wiring substrate is formed of a film-shaped substrate having a larger area than said first and second semiconductor devices. 4. A portion of the wiring board other than a portion sandwiched between the first semiconductor device and the second semiconductor device is bent along the second semiconductor device, and 4. The stacked semiconductor device according to claim 3, wherein a part of the stacked semiconductor device is arranged on the back side of the second semiconductor device. 5. A part of the wiring board disposed on the back side of the second semiconductor device, wherein a part of the second wiring board is provided via an adhesive member.
5. The stacked semiconductor device according to claim 4, wherein said stacked semiconductor device is fixed to a back surface of said semiconductor device. 6. A solder ball is attached to a part of the wiring board disposed on the back side of the second semiconductor device, and the first and second semiconductor devices are connected to the wiring board and the solder. 6. The stacked semiconductor device according to claim 4, wherein said stacked semiconductor device is electrically connectable to an external terminal via a ball. 7. The wiring board includes external terminal connecting pins, and the first and second semiconductor devices electrically connect external terminals to the external terminals via the wiring board and the external terminal connecting pins. 3. The stacked semiconductor device according to claim 1, wherein the stacked semiconductor device is freely connectable. 8. A method for manufacturing a stacked semiconductor device in which a first semiconductor device and a second semiconductor device are stacked, wherein the first semiconductor device is a wiring board having wiring and connection terminals. After mounting on one surface and electrically connecting the first semiconductor device and the wiring substrate, mounting the second semiconductor device on the other surface of the wiring substrate, Wherein the first semiconductor device and the second semiconductor device are electrically connected via the wiring substrate by electrically connecting the second semiconductor device and the wiring substrate. A method for manufacturing a semiconductor device. 9. The semiconductor device according to claim 1, wherein each of the first semiconductor device and the second semiconductor device includes a lead, and the first semiconductor device, the second semiconductor device, and the wiring substrate are electrically connected to each other. 9. The manufacturing method of a stacked semiconductor device according to claim 8, wherein when electrically connecting, the leads of the first and second semiconductor devices are electrically connected to the connection terminals of the wiring board. Method. 10. The first and second wiring boards are provided as the wiring board.
10. The method for manufacturing a stacked semiconductor device according to claim 8, wherein a film-shaped substrate having an area larger than that of the semiconductor device is used. 11. After the second semiconductor device is mounted on the wiring substrate, a portion of the wiring substrate other than a portion sandwiched between the first semiconductor device and the second semiconductor device is removed by the second semiconductor device. 11. The method of manufacturing a stacked semiconductor device according to claim 10, wherein the semiconductor device is bent along the second semiconductor device, and a part of the wiring substrate is disposed on a back surface side of the second semiconductor device. 12. The semiconductor device according to claim 11, wherein a part of the wiring board disposed on the back surface side of the second semiconductor device is fixed to the back surface of the second semiconductor device via an adhesive member. A manufacturing method of the stacked semiconductor device according to the above. 13. The method of manufacturing a stacked semiconductor device according to claim 11, wherein a solder ball is attached to a part of said wiring board disposed on the back side of said second semiconductor device. . 14. The stacked semiconductor device according to claim 8, wherein after the second semiconductor device is mounted on the wiring board, pins for connecting external terminals are provided on the wiring board. Production method.