JP2001330563A - Inspection device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an efficient and low-cost semiconductor inspection device. SOLUTION: An electro-optical system lens-barrel 4 of inspection SM and an optical system lens-barrel 5 of a Raman analytical mechanism are installed in a common sample chamber 1. In this case, installation is executed so that a focus point of an objective lens of the inspection SM agrees with a laser beam irradiation point of the Raman analytical mechanism, and a stage 3 is driven so that the focus point falls on the surface of a sample 2. A galvanometer scan mirror is mounted on the optical system lens-barrel of the Raman analytical mechanism, to thereby scan the sample 2 by a laser beam from a Raman excitation laser beam source 7.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inspection apparatus for semiconductors and the like having a Raman analysis mechanism.

[0002]

2. Description of the Related Art In a semiconductor manufacturing process, a defect generated in a manufacturing process is detected and observed, a component analysis of the defect is performed, and the nature of the defect obtained by the analysis is analyzed. The manufacturing conditions and the like in the manufacturing process are improved so as to reduce the occurrence of defects.

[0003] Recently, since the density of semiconductor elements has been remarkably increased (miniaturization) and the defects themselves have also been miniaturized, the detection and detection of such fine defects have recently been carried out. For the observation, a developed scanning electron microscope for defect inspection (hereinafter referred to as an inspection SM) having a scanning electron microscope as a basic structure is used.

On the other hand, when performing component analysis of such fine defects, there is a movement to use a Raman microscope having a Raman analysis mechanism capable of distinguishing the molecular structure of an organic substance.

[0005]

In the case of analyzing a component of a defect from the detection and observation of the defect, generally, first, a semiconductor sample is set in a sample chamber of the inspection SEM to detect a defect on the sample. Observation is performed, and once the semiconductor sample is removed from the sample chamber to the outside of the sample chamber, the sample is set in a sample chamber of a Raman microscope provided separately from the inspection SEM, and component analysis of defects of the sample is performed. I have.

However, when detecting and observing a defect in a semiconductor sample and analyzing a component of a defect in the same semiconductor sample, the detection and observation and defect detection and observation of the defect in the semiconductor sample are performed by separately provided devices. A considerable amount of time is required for a defect inspection process including a series of analysis steps, and a separate defect detection / observation device and a defect analysis device are required, resulting in a large cost. The present invention has been made to solve such a problem, and provides a new inspection apparatus.

[0007]

An inspection apparatus according to the present invention provides an electronic apparatus for scanning a specimen to be inspected with a focused electron beam in a specimen chamber provided with a stage on which the specimen to be inspected is mounted. An electron optical column equipped with an optical unit and an optical column equipped with an optical unit for irradiating a laser beam condensed on the specimen to be inspected are attached. The scanning image of the sample to be inspected is observed based on the electrons detected from the sample to be inspected, and the Raman scattered light obtained from the sample to be inspected by the latter laser beam irradiation is analyzed by a Raman spectroscope. It is characterized in that the sample component to be inspected is analyzed by spectroscopy.

[0008]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows a schematic example of an inspection apparatus according to the present invention.

In FIG. 1, reference numeral 1 denotes a sample chamber, in which a stage 3 for mounting a sample 2 is provided. Although not shown, the stage may be, for example, a Z plate movable in the Z-axis direction, an X plate movable in the X direction, a Y plate movable in the Y direction, and an electron beam optical axis O. It is composed of a tilt plate that can be tilted at an appropriate angle. Although not shown, each plate is a Z-direction stage movement driving mechanism, an X-direction stage movement driving mechanism, a Y-direction stage movement driving mechanism, and a stage inclination driving mechanism. It is adapted to be driven by.

The upper wall 1U of the sample chamber 1 is provided with two holes at an appropriate distance from each other. One hole is provided with the electron optical system barrel 4 of the inspection SEM, and the other hole is provided with the other hole. Is provided with an optical system barrel 5 of a Raman spectroscopic mechanism. On this occasion,
In design, on the central axis of the electron beam optical system lens barrel 4, that is,
At the focus position Fi of the final stage lens (objective lens) of the inspection SEM on the electron beam optical axis center O, on the central axis of the optical system barrel 5 of the Raman spectroscopy mechanism, that is, on the optical axis center Q of the Raman excitation laser beam. The electron beam optical system barrel 4 and the optical system barrel 5 of the Raman spectroscopic mechanism are mounted on the upper wall 1U of the sample chamber 1 so that the irradiation points of the laser beam of the Raman spectroscopic mechanism coincide with each other.

In the electron optical system barrel 4, an electron gun 6,
An optical system unit such as a focusing lens (not shown), a deflector (not shown), and an objective lens (not shown) is provided.

The optical system lens barrel 5 includes a lens barrel main portion 5A, and supports 5B and 5C which are intermediate portions of the lens barrel main portion 5A and are branched in a direction perpendicular to the center axis Q of the lens barrel main portion. Consisting of
A Raman excitation laser light source 7, a condenser lens 8, reflection mirrors 9, 10, a half mirror 11, an objective lens 12, and the like are provided in the lens barrel main portion 5A, and only Raman scattered light is provided in the branch portion 5B. A Raman filter 13, a condenser lens 14, and a connector 16A to which one end of an optical fiber 15 is connected are provided. Also, in the branch 5C,
Reflection mirrors 17 and 18 and a galvanometer scan mirror 19 are provided. Although not shown, the galvanometer scan mirror 19 is driven by a deflection driving mechanism.

On the side wall 1Sa of the sample chamber 1, a Raman spectroscopic box 49 in which a connector 16B, a condenser lens 47 and a spectroscope 48 are accommodated is mounted.

As shown in FIG.
One end is connected to a connector 16A provided in the support 5B and the other end is connected to a connector 16B provided in the Raman spectroscopic box 19 through a hole formed in the sample chamber side wall 1Sa. I have.

Although not shown, the condenser lens 14
One end of the optical fiber 15 connected to the connector 16A is located at the position where the Raman scattered light is condensed by the light source, and the spectroscope 48 is located at the position where the Raman scattered light is condensed by the condenser lens 47.
The position of each of the condenser lenses 14 and 47 can be moved in parallel along the optical axis of the Raman scattered light so that the spectral incident portion is located.

In the drawing, reference numeral 20 denotes a detector provided with a photoelectron image multiplier,
21 is an amplifier, and 22 is a control device such as a computer. In the figure, 23 is a secondary electron detector attached to the sample chamber side wall 1Sb, 24 is an amplifier, and 25 is a display device such as a cathode ray tube.

The controller 22 reads the Raman spectrum data from the amplifier 21 and the secondary electron image data from the amplifier 24, performs various kinds of signal processing, and displays the Raman spectrum on the display device 25 based on the former data. Or display device 2 based on the latter data.
In addition to displaying the next electron image on the sample on the sample 5, a drive command is sent to the drive mechanism (not shown) of the stage system and the deflection drive mechanism of the galvanometer scan mirror 19, and the electron optical system barrel 4 An operation command is given to each of the units provided therein, and various calculations are performed.

The operation of the device having such a configuration will be described below.

For example, a case where a defect inspection of a semiconductor sample (wafer) completed up to a specific step in a semiconductor manufacturing process will be described.

Usually, the position coordinates of an abnormal point (defect point) of such a semiconductor sample is first measured by an optical defect inspection apparatus (high-speed abnormal point detection apparatus) not shown.
This optical defect inspection device is a commercially available one. A semiconductor sample is placed on a sample mounting table of the defect device, light is irradiated on the entire surface of the sample, reflected light from the sample is detected, and the reflected light is It outputs information (position coordinates of defect points) of abnormal points (defect points) on the sample based on the information.

The output data (position coordinates of the defect) of the optical defect inspection apparatus is sent to an operation / control work station (referred to as EWS) (not shown), where it is displayed on the coordinate system of the defect inspection SM. , And the converted data is temporarily stored in the internal memory of the EWS.

The stored position coordinate data of the defect is sequentially sent to the control unit 22 to detect and detect each defect.
Full-scale defect inspection, which consists of a series of observation and analysis steps, begins.

First, a semiconductor sample (wafer) 2 to be inspected
Is set at a predetermined position on the stage 3 in the sample chamber 1.

Next, the position coordinate data of the defect is sent from the control device 22 to the stage moving drive mechanism (not shown), so that the stage 3 moves so that the defect comes on the electron beam optical axis O of the inspection SM. Is done. At this time, if the moving amount is small, the position coordinate data is sent to the deflector control circuit (not shown) of the inspection SM, and the defect is shifted on the electron beam optical axis O of the inspection SM by moving the electron beam optical axis. You may come. Also, a rough data portion of the position coordinate data is sent to a stage movement driving mechanism (not shown), and a fine data portion is sent to a deflector control circuit (not shown), so that the movement of the stage 3 and the movement of the electron beam optical axis are controlled. The movement may cause the defect to be on the electron beam optical axis O of the inspection SM.
Since the accuracy of the position coordinate data value of the defect detected by the optical defect inspection device has a limit and the stage movement accuracy also has a limit, as shown in FIG.
Is very close to the electron beam optical axis O, but is not always on the electron beam optical axis O.

In this state, in the electron optical system barrel 4 of the inspection SM, the electron beam from the electron gun 6 is focused on the sample 2 by a focusing lens (not shown), and is focused by a deflector (not shown). A predetermined peripheral range (a range in which a defect is considered to be included) R on one side r around the optical axis O is scanned with the electron beam thus obtained. Secondary electrons generated from the sample 2 by this scanning are detected by the secondary electron detector 23 and stored as image data in the built-in memory of the control device 22 via the amplifier 24. The control device calculates an error between the position of the defect and the optical axis O from the stored image data based on the secondary electrons, and supplies deflection data corresponding to the error value to a deflector control circuit (not shown) of the inspection SM. Correction value (offset value)
The area having the size corresponding to the predetermined peripheral range R is again scanned with the electron beam. The control device 2
Reference numeral 2 causes the display device 25 to display a secondary electron image of a defect based on data based on the secondary electrons detected by the scanning.
Since this secondary electron image has been subjected to correction corresponding to the error between the defect and the electron beam optical axis O, it is displayed at the center of the display screen of the display device 25, and the operator can view the secondary image of the displayed defect. Observe the secondary electron image. If the error between the position of the defect and the optical axis O is too large to be corrected by the deflection of the electron beam, a rough partial value of the error value is given to the stage moving drive mechanism. Is given to a deflector control circuit (not shown) of the inspection SM as a correction value (offset value).

Next, the component analysis of the defect thus detected and observed is performed as follows.

As described above, the focus position Fi of the final-stage lens (objective lens) of the inspection SEM on the center O of the electron beam optical axis is previously set on the center axis of the optical system barrel 5 of the Raman spectroscopic mechanism, ie, The laser beam irradiation point of the Raman spectroscopic mechanism on the center Q of the Raman excitation laser axis is designed to be coincident. At the same time, the Z-plate is driven by a Z-direction movement drive mechanism (not shown) according to a command from the control device 22 so that the surface of the sample 3 coincides with the focal point of the final stage lens (objective lens) of the inspection SM. ing. Therefore, ideally, when the correction value is not given to the electron beam, the laser beam irradiation point of the Raman spectroscopy mechanism should be in a state where the focus point of the electron beam coincides with the sample surface. is there.

In this state, the laser beam from the Raman excitation laser light source 7 is condensed by the condenser lens 8, the reflection mirrors 9, 17, the galvanometer scan mirror 19, the reflection mirrors 18, 10, the half mirror 11, and the objective lens 12.
Is irradiated on the sample 3 via the.

As described above, actually, as shown in FIG. 3, since the defect K is not on the electron beam optical axis O before the correction, it is not on the laser optical axis Q. The laser beam from the excitation laser light source 7 may not be irradiated on the defect K.

Since the irradiation intensity distribution of the laser beam from the Raman excitation laser light source 7 is a mountain shape having a FWHM of a finite value D as shown in FIG. 4, even if the defect K is not on the laser optical axis Q, １ ／ of the half width from the optical axis, ie, D
The defect K causes Raman excitation if it falls within a range of / 2 (Raman excitation occurs when a Raman excitation laser beam is irradiated in this range, a so-called Raman excitation allowable range). However, if the defect K does not fall within the Raman excitation allowable range, the defect K does not cause Raman excitation. Therefore, in order to avoid such a fear, the control device 22 controls the deflection driving mechanism (not shown) of the galvanometer scan mirror 19 so that the defect K is irradiated with a laser beam having an intensity that causes Raman excitation. , A scanning signal having a predetermined amplitude. If the defect K does not fall within the Raman excitation allowable range, it is considered that the defect surely exists in the immediate vicinity of the range, and therefore a scan signal with a small amplitude may be used.

By supplying such a scanning signal to a deflection driving mechanism (not shown) of the galvanometer scan mirror 19, the laser beam from the Raman excitation laser light source 7 scans a range including the defect K at a high speed. Irradiation of a laser beam based on the scanning causes Raman excitation of the defect K, and Raman scattered light is generated from the defect K. The Raman scattered light passes through the objective lens 12 and is guided by the half mirror 11 to the Raman filter 13 by changing the course, for example, by 90 °. The Raman filter 13 does not allow scattered light other than Raman scattered light, such as Rayleigh scattered light mixed with the incoming Raman scattered light, to pass only pure Raman scattered light.

The pure Raman scattered light that has passed through the Raman filter in this manner is condensed by the condensing lens 14,
Raman spectroscopy box 49 via optical fiber 15
And the light is condensed by the condenser lens and enters the spectroscope 48. The spectroscope splits the incoming Raman scattered light. The separated Raman spectrum is at a level indicating the molecular structure component of the defect K, and is converted into an electrical signal by the detector 20. The Raman spectrum converted to the electric signal is amplified by the amplifier 21 and
2 and temporarily stored as Raman spectrum data of the defect in a memory built in the control device. The control device displays a Raman spectrum (a Raman spectrum waveform, a peak position, a spectrum intensity, a half width, and the like can be determined) on the display device 25 based on the data instead of the secondary electron image of the defect. Let it.

Thereafter, defects on other samples are similarly detected, observed and analyzed.

As described above, in this embodiment, the electron optical system column of the inspection SM and the optical system column of the Raman analysis mechanism are mounted in the same sample chamber, and detection and observation of a defect of the sample placed on a common stage are performed.・ Since analysis can be performed continuously,
Such a series of defect inspection processes can be performed extremely efficiently, and the cost is significantly reduced as compared with a case where an independent defect detection / observation device and a defect analysis device are prepared.

In the above example, the laser beam from the Raman excitation laser light source 7 is swung within a predetermined range on the sample by the galvanometer scan mirror 19 so that the defect is irradiated with a laser beam that causes Raman excitation of the defect. However, instead of performing such scanning, the following may be performed.

The lens barrel support 5C shown in FIG. 1 is not provided.
The reflection mirrors 9 and 10 are removed from the lens barrel main part 5A, and the X-direction deflection mirror 30X and the Y-direction deflection mirror 30Y are arranged between the half mirror 11 and the objective lens 12 in the lens barrel main part 5A as shown in FIG. An X-direction driver 31X and a Y-direction driver 3 for driving the X-direction deflection mirror 30X and the Y-direction deflection mirror 30Y, respectively, outside the lens barrel.
1Y is provided. Each of these drivers operates in accordance with a command from the control device 22. Then, the control device 25 sends the data corresponding to the correction value, that is, the correction data (deflection data) corresponding to the error value between the position of the defect K and the electron beam optical axis O in each of the X direction drivers 31X and Y direction. When given to the driver 31Y, the X-direction deflecting mirror 30X and the Y-direction deflecting mirror 30Y
Are inclined corresponding to the X-direction component value and the Y-direction component value of the correction value, respectively. As a result, the laser beam from the Raman excitation laser light source 7 irradiates the defect K with a sufficient intensity. Note that a motor may be used as each of the drivers, or a piezo element or the like may be used.

As shown in FIG. 6, the scattered light generated from the sample 2 is sufficiently introduced into the lens barrel 5 between the objective lens 12 and the sample 2 provided in the lens barrel main part 5A of the Raman spectroscopic mechanism. A light collector 50 may be provided so that the scattered light from the sample 2 can be collected in the lens barrel 5 so that it can be taken in. The condensing body 50 is formed of a concave mirror such as a parabolic mirror. The objective lens 12 is attached to the open end of the converging mirror 50. The converging body 50 also strikes the tip facing the sample 2 and the electron beam optical axis O of the inspection SEM. There are holes 51,
52 is opened. Therefore, it is possible to irradiate the sample 2 without interrupting the electron beam from the electron gun 6 and sufficiently enter the scattered light from the sample 2 into the light collector, and
Through the lens barrel main part 5A. still,
FIG. 6A shows a case where the sample is horizontal, and FIG. 6B shows a case where the tilt plate (not shown) is tilted by a tilt drive mechanism (not shown), and the sample is appropriately moved. The figure shows a case where the light collector is inclined at an angle, and the shape of the light collector 50 is designed so that the sample 2 does not collide with the light collector 50 even in such a case.

As shown in FIG. 7, a fluorescent plate 60, a plurality of microchannel plates 61A, 61B, 61C, a fluorescent plate 62, and a linear CCD array 63 are arranged between the spectroscope 48 and the amplifier 21 in this order. The Raman light split by the spectroscope 48 is applied to the fluorescent plate 60 to generate electrons from the fluorescent plate, the electrons are amplified by the plurality of microchannel plates 61A, 61B, 61C, and the amplified electrons are transferred to the fluorescent plate 62. The light may be applied to generate light, and the light may be converted into a current by the linear CCD array 63. By doing so, the intensity of the weak Raman light split by the spectroscope 48 can be increased, and thereby the Raman spectral sensitivity can be increased.

As shown in FIG. 8, an optical fiber 70 is inserted along the central axis between the half mirror 11 and the sample 2 in the barrel main portion 5A, and the tip of the optical fiber 70 facing the sample 2 has a tip. An extremely sharpened needle-like body 71 having a very small opening at the tip is disposed, and the tip of the needle-like body is brought close to the sample 2 such that evanescent light based on the near-field effect from the sample 2 can be detected. Alternatively, the evanescent light from the sample may be propagated through the optical fiber 70 of the needle 71. By guiding the light detected in this way toward the half mirror 11 via the optical fiber 70, even if the defect on the sample 2 is extremely fine, the component analysis can be performed. The needle 71 has a three-dimensional piezo for fine movement so that the needle 71 can be finely moved in a direction parallel to the laser optical axis Q and in a two-dimensional direction on a plane perpendicular to the laser optical axis Q. A piezo element 72 is mounted on the lens barrel main part 5 which operates based on a command from the control device 22.
A is finely moved by a movement drive signal from a piezo element drive circuit 73 provided outside A. The optical fiber 70 extending from the end of the needle-like body on the side opposite to the sample side has a margin so that the needle-like body 71 can finely move in the three-dimensional direction. It is connected to the.

Also, as described above, the design is such that the laser position of the Raman spectroscopy mechanism on the Raman excitation laser axis Q is set at the focus position Fi of the final stage lens (objective lens) of the inspection SEM on the electron beam optical axis O. The electron beam electron optical system lens barrel 4 and the optical system lens barrel 5 of the Raman spectroscopic mechanism are attached to the upper wall 1U of the sample chamber so that the irradiation points of the beams coincide. However, the optical system barrel 5 can be arbitrarily finely moved in a two-dimensional direction on a plane perpendicular to the central axis Q of the optical system barrel 5 of the Raman analysis mechanism in case the coincidence is out of order due to a temporal change or the like. Thus, for example, a pressing mechanism that can move the entire optical system barrel in the vertical direction on the plane and a pressing mechanism that can move the entire optical system barrel in the horizontal direction are provided around the optical system barrel. You may do it.
At this time, a mechanism capable of detecting reflected light generated from the sample when the sample is irradiated with the laser beam from the Raman excitation laser light source 7 and displaying a reflection image of the sample 2 based on the detected reflected light is provided. First, the electron beam of the inspection SM is two-dimensionally swung over the sample at a constant width around the optical axis O to obtain a secondary electron image of the sample 2, and then the laser beam of the Raman spectroscopy A reflected image of the sample 2 is obtained by two-dimensionally shaking the sample with a constant width around the center of the axis Q to obtain a reflected image of the secondary electron image which is located on the electron beam optical axis O. The pressing mechanism is driven so that the mark corresponding to the mark comes on the laser optical axis Q.

In the example shown in FIG. 1, when scanning the sample 2 with the laser beam from the Raman excitation laser light source 7, the galvanometer scan mirror 19 is used, but an acousto-optic light deflection element is used. May be.

[Brief description of the drawings]

FIG. 1 shows a schematic example of an inspection apparatus according to the present invention.

FIG. 2 is a diagram used to explain the operation of the device of the present invention.

FIG. 3 is a diagram used to explain the operation of the device of the present invention.

FIG. 4 is a diagram used to explain the operation of the device of the present invention.

FIG. 5 shows a main part of a modified example of the present invention.

FIG. 6 shows a main part of a modification of the present invention.

FIG. 7 shows a main part of a modified example of the present invention.

FIG. 8 shows a main part of a modification of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Sample chamber 1U ... Sample chamber upper wall 1Sa, 1Sb ... Sample chamber side wall 2 ... Sample 3 ... Stage 4 ... Electronic optical system column 5 ... Optical system column 5A ... Optical system column main part 5B, 5C ... Optical system Lens tube support 6 ... Electron gun 7 ... Raman excitation laser light source 8 ... Condensing lens 9,10,17,18 ... Reflection mirror 11 ... Half mirror 12 ... Objective lens 13 ... Raman filter 14,47 ... Condensing lens 15 ... Light Fibers 16A, 16B Connector 48 Spectroscope 49 Raman spectrometer box 20 Detector 21 Amplifier 22 Controller 23 Secondary electron detector 24 Amplifier 25 Display 30X X-direction deflecting mirror 30Y Y-direction Deflection mirror 31X X direction driver 31Y Y direction driver 50 Light collector 51, 52 Hole 60, 62 Fluorescent plate 61A, 61B, 61C Microcha Channel plate 70: Optical fiber 71: Needle-like body 72: Piezo element for three-dimensional fine movement 73: Piezo element drive circuit

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/66 H01L 21/66 N 5C033 // G01N 21/956 G01N 21/956 A H01J 37/28 H01J 37 / 28 B (72) Inventor Masayuki Inoguchi 2-34-7 Akebonocho, Tachikawa-shi, Tokyo Nippon Electronic System Technology Co., Ltd. (72) Inventor Masao No-Leaker 3-1-2 Musashino, Akishima-shi, Tokyo Japan Inside Electronic Co., Ltd. (72) Inventor Satoshi Oki 3-1-2 Musashino, Akishima-shi, Tokyo Japan Inside Electronic Co., Ltd. (72) Inventor Shuichi Muraishi 3-1-2 Musashino, Akishima-shi, Tokyo Japan Electronic Riosonic Co., Ltd. In-house F term (reference) 2F067 AA45 AA54 BB01 BB04 CC17 EE10 FF11 HH06 JJ05 KK04 PP12 RR30 SS02 TT01 UU32 2G001 AA03 AA07 AA1 0 BA07 BA14 CA03 CA07 DA01 DA02 DA09 EA06 FA06 FA09 GA04 GA06 HA12 HA13 JA03 JA07 JA11 JA20 KA01 KA03 KA13 LA11 MA05 PA11 2G043 AA01 BA14 CA07 DA06 EA03 FA01 GA02 GB03 HA02 HA05 HA15 JA01 KA09 LA02 LA03 LA07 MA10 A13 2 AA01 BA02 BA05 CA41 CB19 CB21 DH12 DH24 DH32 DH39 DH50 DJ04 DJ05 5C033 UU03 UU06 UU10

Claims (15)

[Claims] 1. An electron optical system barrel having an electron optical means for scanning a sample to be inspected with a focused electron beam in a sample chamber provided with a stage on which the sample to be inspected is mounted. An optical system barrel provided with an optical unit for irradiating the test sample with a focused laser beam, based on electrons detected from the test sample by the former electron beam scanning. The scanning image of the sample to be inspected is observed, and the components of the sample to be inspected are analyzed by splitting the Raman scattered light obtained from the sample by the latter laser beam irradiation with a Raman spectroscope. Inspection equipment that is made as. 2. The electron optical system column and the optical system column are attached to a sample chamber such that an electron beam irradiation region on the sample by the electron optical means coincides with an irradiation region of the laser beam. The inspection device according to claim 1, wherein 3. The inspection apparatus according to claim 1, wherein the laser beam is capable of scanning on a sample to be inspected. 4. The inspection apparatus according to claim 1, wherein at least a part of an optical path for guiding Raman scattered light between the sample to be inspected and the spectroscope is constituted by a flexible optical fiber. 5. The inspection apparatus according to claim 1, wherein the optical system barrel is capable of two-dimensionally finely moving in a direction intersecting a laser beam optical axis. 6. The inspection apparatus according to claim 1, wherein a filter for passing only Raman scattered light is disposed on an optical path for extracting scattered light from the sample to be inspected. 7. The inspection apparatus according to claim 1, further comprising: a deflecting unit for deflecting an irradiation position of the laser beam on the sample to be inspected on a laser beam optical path in the optical system barrel. 8. A light collector for condensing scattered light from the test sample into the optical system barrel directly above the test sample along the optical axis of the laser beam. Inspection device as described. 9. The condensing body is a concave mirror, and a hole is formed in a portion of the tip portion facing the sample to be inspected and a portion intersecting with the optical axis of the electron beam. 9. The inspection device according to claim 8, wherein an objective lens is provided. 10. The mirror of claim 9, wherein said concave mirror is a parabolic mirror.
Inspection device as described. 11. The Raman light split by the spectroscope,
The fluorescent light is applied to the fluorescent screen, electrons generated from the fluorescent light are amplified by at least one microchannel plate, the amplified electrons are applied to another fluorescent screen to generate light, and the generated light is converted into a current by a linear CCD array. 2. The inspection apparatus according to claim 1, wherein the inspection is performed. 12. A mirror for passing a laser beam for irradiating a sample to be inspected and guiding scattered light from the sample to be inspected toward a spectroscope is provided at an intermediate portion in the optical system barrel. 2. The inspection apparatus according to claim 1, wherein a needle-like body having an optical fiber inserted on its central axis is arranged on the optical axis of the laser beam between the mirror and the sample to be inspected. 13. The inspection apparatus according to claim 12, wherein the needle-like body is movable in a direction of an optical axis of the laser beam and on a plane perpendicular to the optical axis. 14. The inspection apparatus according to claim 13, wherein the needle-shaped body is moved by a moving mechanism having a piezo element. 15. The inspection apparatus according to claim 12, wherein the tip of the needle-shaped body is located at a distance from the sample to be inspected in which evanescent light from the sample to be inspected can be detected.