JP2001316889A - Equipment and system for liquid treatment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To carry out plating while keeping a semiconductor wafer cleanly. SOLUTION: A semiconductor equipment comprises a chamber having a transportation part 11 for transferring the semiconductor wafer to and from outside and having a plating part 12 for subjecting the semiconductor wafer for plating, a plating liquid tank 29 installed in a plating part 12, and a migration mechanism 14 for moving the semiconductor wafer to a predetermined plating position C to subject the semiconductor wafer for plating. In a boundary between the transportation part 11 and the plating part 12, a separator 27 providing an opening 27a for passing the semiconductor wafer is arranged. Air cleaned by a filter 25 is spouted from a top plate of the transportation part 11 and is absorbed at a top face of the separator 27 to form a downflow in the transportation part 11. Thus, mist and the like generated in a plating part 12 are exhausted through an exhaust-pipe 31. Accordingly, an ambient atmosphere in the transportation part 11 is separated from an ambient atmosphere in the plating part 12.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid processing apparatus and a liquid processing system, and more particularly to a liquid processing apparatus and a liquid processing system suitable for liquid processing of semiconductor devices and the like.

[0002]

2. Description of the Related Art One method for forming a conductive layer having a uniform thickness on a semiconductor wafer is electroplating. When plating a semiconductor wafer, a barrier layer and a seed layer are previously formed on the surface of the semiconductor wafer. The barrier layer prevents metal particles (or metal atoms) of the conductive layer formed by the plating process from diffusing into the semiconductor wafer. The seed layer is a layer that becomes a seed when the conductive layer is grown by plating.

[0005] The semiconductor wafer having the barrier layer and the seed layer formed thereon is carried into a processing chamber in which a plating bath filled with a processing solution is installed, and subjected to a plating process. Specifically, the semiconductor wafer carried into the processing chamber is arranged so that its plating surface (the surface of the seed layer) is in contact with the surface of the plating solution. Then, a predetermined voltage is applied to each of the seed layer and the plating solution, so that the conductive layer grows on the seed layer. By performing this plating process for a predetermined time, a conductive layer having a predetermined thickness is formed on the seed layer.

[0004]

However, in the conventional plating process described above, the yield and operation reliability of the manufactured semiconductor device may be reduced. Specifically, mist of a plating solution or the like is generated from a plating tank installed in the processing chamber, and scatters into the processing chamber and adheres to various portions of the semiconductor wafer. In particular, since copper easily contaminates the semiconductor wafer, when copper plating is performed,
Copper may adhere to a portion other than the plating surface of the semiconductor wafer, and the characteristics and the like of the semiconductor wafer may change.

As described above, a semiconductor device manufactured from a semiconductor wafer contaminated with a plating solution may have a low yield and a low operating reliability. A similar problem generally occurs in liquid processing in which a processing target such as a semiconductor wafer is subjected to liquid processing such as plating.

Accordingly, it is an object of the present invention to provide a liquid processing apparatus and a liquid processing system which realize a high yield of semiconductor devices. Another object of the present invention is to provide a liquid processing apparatus and a liquid processing system for performing a predetermined process while keeping a semiconductor wafer clean.

[0007]

In order to achieve the above object, a liquid processing apparatus according to a first aspect of the present invention comprises: a first region for transferring an object to / from an external device; A chamber having a second region for performing predetermined liquid processing on the object to be processed, a processing liquid tank installed in the second region and storing a processing liquid, and the processing liquid in the second region. It is characterized by comprising liquid treatment means for subjecting the body to liquid treatment, and separation means for separating the atmosphere in the first region and the atmosphere in the second region. According to the present invention, since the atmosphere in the first region and the atmosphere in the second region are separated, fine particles such as mist generated by performing the liquid treatment on the object adhere to the object. Can be prevented. As a result, a high yield of the manufactured semiconductor device can be realized. Also, since one chamber forms one substantially closed processing space, for example,
A multi-chamber system in which a plurality of the liquid processing apparatuses are set can be formed relatively easily.

The processing solution tank stores a plating solution containing copper, and the wafer processing means forms a layer made of copper on the object to be processed formed of a semiconductor wafer by performing a plating process. The separation unit is provided in the first region, and near the boundary between the first region and the second region, a suction unit for sucking an atmosphere in the first region; The first region and the second region
Exhaust means for exhausting the atmosphere in the second area to the outside near the boundary with the area. When manufacturing semiconductor devices, copper should be handled with special care.
It is a substance that should be prevented from being contaminated or spread. According to this configuration, the first region and the second region are substantially separated, and further,
Since the chamber forms a substantially closed processing space, contamination and the like can be prevented.

[0009] The separation means may include impurities contained in the atmosphere sucked by the suction means, such as dust, dust, organic matter,
An impurity removing means for removing a chemical substance may be provided.

The liquid processing means is provided inside the chamber and holds the object to be processed, and the liquid processing means is provided outside the chamber and moves the holding means, for example, moves up, down, left and right. A moving unit that moves the object by rotating the object.

[0011] The chamber may have a door for separately maintaining the processing liquid tank and the wafer processing means.

[0012] A caster for movement may be further provided. As described above, the liquid processing apparatus includes a substantially closed one.
Form one processing space. For this reason, by arranging the casters in each chamber so as to be easily movable, a multi-chamber system in which a plurality of liquid processing apparatuses are set can be formed relatively easily.

[0013] A liquid processing system according to a second aspect of the present invention comprises: a transport device for transporting an object to be processed; and a liquid processing device for performing a predetermined liquid process on the object loaded by the transport device. Wherein the liquid processing apparatus is configured to have a first region for transferring the object to and from the outside, a second region for performing a predetermined process on the object, a chamber having: A processing liquid tank installed in the second area for storing a processing liquid; liquid processing means for performing liquid processing on the object to be processed in the second area; an atmosphere in the first area and the second area; And separation means for separating the internal atmosphere.

The processing solution tank stores, for example, a plating solution containing copper, and the solution processing means forms a copper layer on the object to be formed of a semiconductor wafer by performing a plating process. Wherein the separation means is provided in the first area, and near the boundary between the first area and the second area, a suction means for sucking an atmosphere in the first area; An exhaust unit that is provided and exhausts an atmosphere in the second area to the outside near the boundary between the first area and the second area may be provided.

[0015] The separating means may include an impurity removing means for removing impurities contained in the atmosphere sucked by the suction means.

The wafer processing means is installed inside the chamber and holds the object to be processed, and the wafer processing means is installed outside the chamber and moves the object by moving the holding means. And moving means.

[0017] The chamber may have a door for separately maintaining the processing liquid tank and the wafer processing means.

[0018] The liquid processing apparatus may further include a caster for moving.

[0019]

Next, a liquid processing apparatus according to an embodiment of the present invention will be described with reference to the drawings, taking a plating chamber as an example. The plating chamber according to the embodiment of the present invention is applied to, for example, a semiconductor processing system as shown in FIG. The semiconductor processing system includes a transfer chamber 1
, A load lock chamber 2, and a processing chamber 3. The plating chamber is used as the processing chamber 3.

The transfer chamber 1 includes a transfer robot and the like, and transfers the semiconductor wafer W to be processed to the load lock chamber 2 and the processing chamber 3.

The load lock chamber 2 is connected to the transfer chamber 1 and is provided for transferring the semiconductor wafer W between the transfer chamber 1 and the outside while maintaining the pressure in the transfer chamber 1. Specifically, the load lock chamber 2 is provided with a vacuum pump and the like, and is set so that the internal pressure is substantially equal to the pressure in the transfer chamber 1 after the semiconductor wafer W to be processed is loaded. The semiconductor wafer W can be carried into the transfer chamber 1. Further, the load lock chamber 2 is set so that the internal pressure is substantially equal to the external pressure after the semiconductor wafer W having undergone the predetermined processing is carried in from the transfer chamber 1, and the semiconductor wafer W is Can be carried out.

A plurality of processing chambers 3 are provided, each of which is connected to the transfer chamber 1 and performs a predetermined processing on the semiconductor wafer W. For example, the processing chamber 3 performs a liquid process such as plating and cleaning, or a process such as annealing on the semiconductor wafer W. For example, one control circuit for controlling the operation of the semiconductor processing system configured as described above is provided in each of the chambers or in the semiconductor processing system. When a control circuit is provided in each of the chambers, the control circuits are connected to each other by a cable or the like, and are set so that the operation in each chamber is performed efficiently.

Next, a detailed configuration of the plating chamber according to the embodiment of the present invention will be described. FIG. 2 is a sectional view showing the configuration of the plating chamber. As shown in FIG. 2, the inside of the plating chamber is a transport unit 1 in order from the top.
1, a plating unit 12, and a circulation unit 13, which are divided into three regions. A moving mechanism 14 for transporting the semiconductor wafer W to the outside and a caster 15 for moving the plating chamber are provided.

The transfer section 11 is an area for transferring the semiconductor wafer W to and from the outside. An installation port 21 for installing the moving mechanism 14 is formed on the ceiling of the transport unit 11, and a part of the moving mechanism 14 is installed inside the plating chamber via the installation port 21. On the side wall of the transfer section 11, a gate 22 for taking in and out the semiconductor wafer W is provided. For example, the gate 22 is connected to the transfer chamber 1, and the semiconductor wafer W moves between the plating chamber and the transfer chamber 1 via the gate 22.

The top of the transport section 11 has a transport section 11
In order to generate a downflow of air in the inside and to fill the inside of the transport unit 11 with clean air, one or a plurality of sets of an intake port 23, a fan 24, a filter 25, and an air pipe 25 are provided. The air inlet 23 is formed on the top plate of the plating chamber and communicates with the outside air. The fan 24 takes in outside air through the intake port 23 and blows it out of the outlet. The filter 25 removes impurities such as dust and dust contained in the air blown from the outlet of the fan 24. Further, an organic substance removing filter for trapping organic substances, a chemical filter for removing chemical substance components, and the like may be provided.

A separator 27 is provided between the transport section 11 and the plating section 12 to separate the air in the transport section 11 from the air in the plating section 12. Separator 2
7 have a plurality of openings formed on the upper surface thereof.
The gas in 1 is exhausted. Since clean air is supplied from the filter 25 and the gas in the transport unit 11 is sucked and exhausted from the upper surface of the separator 27, a clean downflow always exists in the transport unit 11, and Is maintained in a clean atmosphere.

The separator 27 has a through hole 2 through which the semiconductor wafer W moves between the transfer section 11 and the plating section 12.
7a. Further, the lower surface (plated surface) of the semiconductor wafer W disposed at the predetermined cleaning position B is provided on the separator 27.
For example, a washing nozzle 28 for ejecting pure water for washing is provided. The plating section 12 is an area where a plating process is performed on the semiconductor wafer W, and includes an inner tank 29, an outer tank 30, and an exhaust pipe 31.

The inner tank 29 is a tank for storing a plating solution such as a copper sulfate solution supplied from the circulating unit 13. When the inner tank 29 is filled with the plating solution, the semiconductor wafer W disposed at a predetermined plating position C is filled with the plating solution. The plating surface is arranged so as to contact the liquid surface of the plating solution. In addition, a circulation unit 1 is provided at the bottom of the inner tank 29.
An ejection tube 29a serving as a supply path for the plating solution from 3 is provided, and an anode electrode 29b for applying a predetermined voltage to the plating solution during plating is formed around the ejection tube 29a.

The outer tank 30 is provided for collecting the plating solution overflowing from the inner tank 29. Specifically, the outer tub 30 is installed at a predetermined interval from the inner tub 29 so that a recovery path 30a is formed between the inner tub 29 and the outer tub 30. The plating solution overflowing from the inner tank 29 is recovered by the circulation unit 13 through the recovery path 30a.

The exhaust pipe 31 is formed along the separator 27 and is connected to an exhaust system (not shown). Air in the plating section 12 containing fine particles (mist) of the plating solution is discharged to the outside through the exhaust pipe 31. In this way, the transport unit 11 and the plating unit 12 are separated from each other.
7, and further, while forming a downflow in the transporting unit 11, exhausting air from the upper surface of the separator 27.
By exhausting the air in the plating unit 12 from the exhaust pipe 31 adjacent to the separator 27, the air in the transport unit 11 and the air in the plating unit 12 can be reliably separated. Thereby, the mist of the plating solution does not adhere to the semiconductor wafer W in the transfer unit 11, and the semiconductor wafer W can be kept clean. Further, the mist can be prevented from diffusing out of the plating chamber due to the down flow in the transport unit 11.

The circulation section 13 is an area for circulating the plating solution, and includes circulation pipes 32 and 33, a recovery pipe 34, and a tank 3
5, a pump 36, a valve 37, and an ejection pump 38 are provided.

The recovery pipe 34 is connected to a recovery path 30 a formed between the inner tank 29 and the outer tank 30, recovers the plating solution overflowing from the inner tank 29, and supplies the plating solution to the jet pump 38. The tank 35 stores a new plating solution of a predetermined concentration, and this new plating solution is supplied to the collection pipe 34 via the supply pump 36 and the valve 37. The amount of the supplied new plating solution is set to an amount determined in advance by experiments or the like so that the concentration of the plating solution in the inner tank 29 becomes constant. The ejection pump 38 is connected to the ejection pipe 29.
a, and supplies the recovered plating solution and a new plating solution supplied through the recovery pipe 34 into the inner tank 11 through the ejection pipe 29a. This makes it possible to use the plating solution efficiently and to keep the concentration of the plating solution constant at all times.

The moving mechanism 14 comprises a rotating mechanism and an elevating mechanism. The rotation mechanism is provided at a tip of the rotation shaft 39, the rotation shaft 39 that penetrates the installation port 21, the holding unit 40 that holds the semiconductor wafer W, and applies a predetermined voltage to the plating surface of the semiconductor wafer W; A rotation motor 41 installed outside the plating chamber and rotating the holding unit 40
It has.

On the other hand, the elevating mechanism is installed outside the plating chamber and the support shaft 42 supporting the rotating shaft 39,
An elevating motor 43 for elevating and lowering the support shaft 42 is provided.
The elevating mechanism raises and lowers the rotating shaft 39 by the elevating motor 43, and arranges the holder 40 (or the semiconductor wafer W) at a predetermined position. Specifically, the elevating mechanism 14b includes a delivery position A where the semiconductor wafer W is delivered to / from the outside, a cleaning position B where the plating surface of the semiconductor wafer W is cleaned, and plating that performs the plating process on the semiconductor wafer W. The holding unit 40 is disposed at each of the positions C. After the plating process is completed, the rotation mechanism rotates the semiconductor wafer W to remove excess water and the like adhering to the semiconductor wafer W. However, in order to keep the air in the transport unit 11 clean,
The rotation mechanism rotates the semiconductor wafer W between the cleaning position B and the plating position C. As described above, the rotation motor 41
In addition, since the elevating motor 43 is provided outside the plating chamber, it is possible to prevent particles and the like generated by the operation of the motor from adhering to the semiconductor wafer W.

When a control circuit for controlling the operation of the semiconductor processing system is provided in each chamber, the plating chamber has a control unit 16 as shown in FIG. The control unit 16 controls the operation of the entire plating chamber related to the plating process according to a setting input in advance by a plating chamber user or the like.

Next, the operation of the plating chamber configured as described above will be described. Hereinafter, a case where a copper plating process is performed on the semiconductor wafer W will be described as an example. First, the processing chamber 3 necessary for performing the plating process is connected to the transfer chamber 1 as shown in FIG. Specifically, the load lock chamber 2, the plating chamber 3a, the cleaning chamber 3b, and the annealing chamber 3c are connected to the transfer chamber 1. At this time, since the plating chamber 3a includes the casters 15 and can be easily moved, a semiconductor processing system can be easily constructed. Although not described below, the operation of the semiconductor processing system is controlled by a control circuit (a control unit 1).
6 inclusive).

After each chamber is connected to the transfer chamber 1, the pressure in each chamber is set to a predetermined pressure by a vacuum pump (not shown) or the like. Also, the plating chamber 3a
The plating solution of a predetermined concentration is stored in the inner tank 29, and the internal air is separated by the separator 27. Specifically, the supply pump 36 of the plating chamber 3a sucks a plating solution having a predetermined concentration from the tank 25 and supplies the plating solution to the collection pipe 34 via the valve 37. And the ejection pump 38
Discharges the plating solution supplied to the recovery pipe 34 into the ejection pipe 29a.
And the inner tank 11 is filled with a plating solution having a predetermined concentration. Also, the fan 24 of the plating chamber 3a
Takes in outside air through the intake port 23. The outside air taken in by the fan 24 is supplied into the transport unit 11 through the filter 25 and exhausted from the separator 27. As a result, a clean downflow is generated in the transport unit 11. On the other hand, the air in the plating section 12 is supplied to an exhaust system (not shown) via the exhaust pipe 31 and is discharged to the outside. In this manner, the plating solution having a predetermined concentration in the inner tank 29 is stored, and the air in the plating chamber 3a is separated by the separator 27 as a boundary.

After the pressure and the like in each chamber are set to a predetermined value as described above, the semiconductor wear W to be plated is carried into the load lock chamber 2 by a transport mechanism (not shown) or the like. The semiconductor wafer W to be plated is
For example, as shown in FIG.
And a seed layer 53. Barrier layer 5
2 is to prevent the metal (copper) constituting the conductive layer formed by the plating process from diffusing into the substrate 51.
It is formed on the substrate 51 by sputtering or the like.
The material of the barrier layer 52 is, for example, tungsten.

The seed layer 53 is a layer serving as a seed for growing a conductive layer formed by plating, and is formed on the barrier layer 52 by sputtering or the like. The load lock chamber 2 into which the semiconductor wafer W is loaded,
After setting the internal pressure to be substantially the same as the pressure in the transfer chamber 1, the space between the transfer chamber 1 is released.

The transfer robot in the transfer chamber 1 carries the semiconductor wafer W in the load lock chamber 2 into the plating chamber 3a. Specifically, the transfer robot loads the semiconductor wafer W through the gate 22 of the plating chamber 3a, and places the semiconductor wafer W on the holding unit 40 arranged at the receiving position A with the seed layer 53 down. Is set. After the semiconductor wafer W is set on the holding unit 40, the gate 22 is closed, and the elevating mechanism lowers the holding unit 40 holding the semiconductor wafer W to the cleaning position B by the elevating motor 43.

Thereafter, the lifting mechanism lowers the holding unit 40 to the plating position C by the lifting motor 43. And
The holding part 40 is arranged at the plating position C and the semiconductor wafer W
When the plating surface of the plate contacts the surface of the plating solution, the holding portion 40
Applies a predetermined voltage to the seed layer 53, and the anode electrode 29b applies a predetermined voltage to the plating solution. Specifically, the holding unit 40 applies a negative voltage to the seed layer 43, and the anode electrode 29b applies a positive voltage to the plating solution. Thus, a Cu conductive layer is formed on the seed layer 53.

After the plating process is completed, when the holding unit 40 is placed at the cleaning position B, pure water is sprayed from the cleaning nozzle 28 toward the surface (plating surface) of the seed layer 53, and the surface of the seed layer 43 is discharged. Is washed. The elevating mechanism includes a holding unit 40
And the semiconductor wafer W is detached from the plating solution. However, the raised position of the holding unit 40 is set between the cleaning position B and the plating position C in order to keep the air in the transport unit 11 clean. And the rotation mechanism is a rotation motor 41
To rotate the semiconductor wafer W to remove excess water adhering to the semiconductor wafer W. Next, when the lifting mechanism raises the holding unit 40 to the receiving position A, the gate 22 is released, and the semiconductor wafer W is carried out by the transfer robot in the transfer chamber 1.

The semiconductor wafer W carried out of the plating chamber 3a is carried into a cleaning chamber 3b and subjected to a cleaning process. Specifically, a trace amount of a plating solution or the like remaining on the semiconductor wafer W is removed by irradiation with pure water or the like. Thereafter, the semiconductor wafer W is placed in the annealing chamber 3c.
And then annealed. Thereby, the crystal grain size, the crystal direction, and the like of the conductive layer formed by the plating process are uniformed. After the completion of the annealing, the semiconductor wafer W is carried into the load lock chamber 2 again by the transfer robot in the transfer chamber 1. When the semiconductor wafer W is loaded into the load lock chamber 2 from the transfer chamber 1, the internal pressure of the load lock chamber 2 is set to be substantially equal to the external pressure, and then the load lock chamber 2 is released from the outside. And
A semiconductor wafer W is taken out of the semiconductor processing system,
The processing by the semiconductor processing system shown in FIG. 3 ends.

As described above, the plating chamber 3a
Since the air in the transport unit 11 and the air in the plating unit 12 and the circulating unit 13 are controlled separately, it is possible to prevent air including mist of the plating solution from entering the transport unit 11, The inside air can be kept clean. For this reason, for example, even when a copper plating process that contaminates a semiconductor wafer is performed, the semiconductor wafer can be kept clean. Further, since the rotating motor 41 and the elevating motor 43 of the moving mechanism 14 are provided outside the plating chamber 3a, it is possible to prevent particles and the like generated by rotation of the motor from adhering to the semiconductor wafer. As a result, the yield of the manufactured semiconductor device is high, and high operation reliability of the semiconductor device can be realized.

It should be noted that the ceiling of the plating chamber 3a is
As shown in FIG. By doing so, maintenance and the like of the plating chamber 3a can be easily performed. Further, a plurality of doors for separately maintaining the moving mechanism 14, the inner tank 29 and the outer tank 30, piping for circulating the plating solution, and the like may be provided on the ceiling and side walls of the plating chamber 3a.

An air curtain may be provided in place of the exhaust pipe 31. For example, as shown in FIG. 6, a fume port 44 for blowing clean air onto a plane, and a fume port 4
A suction port 45 for sucking the air blown out from the blast port 44 is provided at a position facing the nozzle 4. Then, a compressor or the like that generates and blows out clean air is connected to the blowing port 44, and an exhaust pump or the like is connected to the suction port 45 to exhaust the sucked air to the outside. Even if it does in this way, plating part 1
The air containing the mist of the plating solution and the like existing in 2 can be prevented from entering the transfer section 11, and the semiconductor wafer can be kept clean.

In the above embodiment, the case where the plating chamber 3a is used for the copper plating process has been described. However, the plating chamber 3a can be used for a plating process other than the copper plating. In addition, the method of dividing the inside into a plurality of regions and independently controlling the air in each region is not limited to the plating chamber 3a, and when a predetermined process is performed on the semiconductor wafer, a gas or a particle that adversely affects the semiconductor wafer is used. The present invention can be applied to a processing chamber in which the above-described phenomenon occurs. For example, by applying the present invention to a cleaning chamber, a sputtering chamber, or the like, air can be separately controlled in a region where a predetermined process is performed on a semiconductor wafer and in a region where the semiconductor wafer is transferred, similarly to the above. Therefore, the semiconductor wafer can be kept clean, and a high yield of the manufactured semiconductor device can be realized. Further, the semiconductor device manufactured in this manner has high operation reliability. Further, in the above embodiment, the case where the liquid processing is performed on the semiconductor wafer W has been described as an example, but the processing target is not limited to the semiconductor wafer W,
A glass substrate or the like for a CD (Liquid Crystal Display) may be used.

[0048]

As is apparent from the above description, a high yield of semiconductor devices can be realized by the present invention. Further, according to the present invention, predetermined processing can be performed while keeping the semiconductor wafer clean.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of a semiconductor processing system using a plating chamber according to an embodiment of the present invention.

FIG. 2 is a configuration diagram of a plating chamber according to an embodiment of the present invention.

FIG. 3 is a diagram showing a specific configuration of a semiconductor processing system using a plating chamber according to an embodiment of the present invention.

FIG. 4 is a configuration diagram of a semiconductor wafer processed by the semiconductor processing system shown in FIG. 3;

FIG. 5 is another configuration diagram of the plating chamber according to the embodiment of the present invention.

FIG. 6 is another configuration diagram of the plating chamber according to the embodiment of the present invention.

[Explanation of symbols]

 Reference Signs List 1 transport chamber 2 load lock chamber 3 processing chamber 3a plating chamber 3b cleaning chamber 3c annealing chamber 11 transport unit 12 plating unit 13 circulation unit 14 moving mechanism 15 caster 16 control unit 21 installation port 22 gate 23 intake port 24 fan 25 filter 27 Separator 28 Cleaning nozzle 29 Inner tank 29a Ejector pipe 29b Anode electrode 30 Outer tank 30a Recovery path 31 Exhaust pipe 34 Recovery pipe 35 Tank 36 Supply pump 37 Valve 38 Ejection pump 39 Rotating shaft 40 Holder 41 Rotating motor 42 Supporting shaft 43 Lifting motor 44 Fume 45 Inlet

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K024 AA09 BB12 CB01 CB02 CB03 CB26 GA16 4M104 BB17 DD52 HH20 5F031 CA02 GA14 GA16 GA57 MA25 NA02 NA08

Claims (12)

[Claims] 1. A chamber having a first area for transferring an object to and from the outside, and a second area for performing a predetermined liquid treatment on the object, and the second area. A processing solution tank for storing a processing solution therein, a liquid processing unit for performing a liquid processing on the object to be processed in the second region, an atmosphere in the first region and an atmosphere in the second region. And a separating means for separating the liquid and the liquid. 2. The processing solution tank stores a plating solution containing copper, and the wafer processing means performs a plating process.
Forming a layer made of copper on the object to be processed composed of a semiconductor wafer, wherein the separating means is provided in the first area, and near a boundary between the first area and the second area. Suction means for sucking the atmosphere in the first area; and exhaust means for exhausting the atmosphere in the second area near a boundary between the first area and the second area, the suction means being installed in the second area. The liquid processing apparatus according to claim 1, further comprising: an exhaust unit configured to perform the processing. 3. The liquid processing apparatus according to claim 1, wherein said separating means includes an impurity removing means for removing impurities contained in the atmosphere sucked by said suction means. 4. The liquid processing means is installed inside the chamber and holds the object to be processed. The liquid processing means is installed outside the chamber and moves the holding means to move the object by moving the holding means. 4. A moving means for moving, comprising:
The liquid processing apparatus according to the item. 5. The chamber has a door for separately maintaining the processing liquid tank and the liquid processing means.
The liquid processing apparatus according to any one of claims 1 to 4, wherein: 6. The vehicle further comprising a caster for moving.
The liquid processing apparatus according to any one of claims 1 to 5, wherein: 7. A transport apparatus for transporting an object to be processed, and a liquid processing apparatus for performing a predetermined liquid treatment on the object loaded by the transport apparatus, wherein the liquid processing apparatus is connected to an external device. A chamber having a first region for transferring the object to be processed between the first region and a second region for performing a predetermined process on the object to be processed; and a chamber disposed in the second region for storing a processing liquid. A processing liquid tank; a liquid processing unit configured to perform liquid processing on the object to be processed in the second region; and a separation unit configured to separate an atmosphere in the first region and an atmosphere in the second region. A liquid processing system, comprising: 8. The processing solution tank stores a plating solution containing copper, and the solution processing means forms a copper layer on the object to be formed of a semiconductor wafer by performing a plating process. Wherein the separating means is provided in the first area, and near a boundary between the first area and the second area, a suction means for sucking an atmosphere in the first area; The apparatus according to claim 7, further comprising: an exhaust unit that is installed and that exhausts an atmosphere in the second area to the outside near a boundary between the first area and the second area. Liquid treatment system. 9. The liquid processing system according to claim 7, wherein said separation means includes an impurity removing means for removing impurities contained in the atmosphere sucked by said suction means. 10. The liquid processing means is installed inside the chamber and holds the object to be processed. The liquid processing means is installed outside the chamber and moves the holding means to move the object by moving the holding means. 10. A moving means for moving, comprising:
The liquid treatment system according to the item. 11. The liquid processing apparatus according to claim 7, wherein said chamber has a door for separately maintaining said processing liquid tank and said liquid processing means. system. 12. The liquid processing apparatus according to claim 7, further comprising a caster for moving.
2. The liquid processing system according to claim 1.