JP2001308217A - Semiconductor device - Google Patents

Semiconductor device

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Publication number
JP2001308217A
JP2001308217A JP2000126839A JP2000126839A JP2001308217A JP 2001308217 A JP2001308217 A JP 2001308217A JP 2000126839 A JP2000126839 A JP 2000126839A JP 2000126839 A JP2000126839 A JP 2000126839A JP 2001308217 A JP2001308217 A JP 2001308217A
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JP
Japan
Prior art keywords
conductive
insulating substrate
layer
semiconductor element
surface
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Pending
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JP2000126839A
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Japanese (ja)
Inventor
Takahiro Nakao
貴博 中尾
Original Assignee
Kyocera Corp
京セラ株式会社
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Application filed by Kyocera Corp, 京セラ株式会社 filed Critical Kyocera Corp
Priority to JP2000126839A priority Critical patent/JP2001308217A/en
Publication of JP2001308217A publication Critical patent/JP2001308217A/en
Application status is Pending legal-status Critical

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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Abstract

PROBLEM TO BE SOLVED: To resolve the problem of deterioration of conductivity between the conductor layer on the upper surface of an insulating board and a metal cover having different heat expansion coefficients, caused by the stress which is generated by the heat generated when a semiconductor element operates. SOLUTION: This semiconductor device is composed of the insulating board 1 having a loading part 1a of the semiconductor element 2 on the upper surface and the grounding conductor 5 on the side surface, the semiconductor element 2 loaded on the loading part 1a, the conductor layer 4 formed to surround the loading part 1a on the upper surface of the insulating substrate 1 and connected to the grounding conductor 5 electrically, and the conductive cover 3 interposing the conductor layer 4 and being connected through the conductive sealing material 6 in the upper surface of the insulating substrate 1. The conductive sealing material 6 contains a thermosetting resin as a main component and contains the conductive particles whose surface of the core which is composed of organic materials which are 5-30 μm in average particle diameter and 1-50 MPa in compressive strength.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、外部への電磁波の放射を防ぐシールド効果や外部からの電磁波の侵入を防止するイミュニティ効果を有する半導体装置に関するものであり、特に高周波用半導体素子を搭載した携帯電話に代表される移動体通信分野等の半導体装置に関するものである。 BACKGROUND OF THE INVENTION The present invention relates to a semiconductor device having a immunity effect of preventing the electromagnetic waves from entering from the shielding effect and the outside to prevent radiation of electromagnetic waves to the outside, in particular mounting a semiconductor element for high frequency to a semiconductor device such as a mobile communication field represented by a mobile phone.

【0002】 [0002]

【従来の技術】近年、移動体通信機器は高性能化が急激に進展し、これに伴って半導体素子も高速駆動が行なわれノイズの影響を極めて受け易いものとなってきている。 In recent years, mobile communication devices rapidly progressing higher performance, it has become extremely susceptible to influence of the semiconductor elements and high-speed driving performed noise accordingly. また同時に、半導体素子の発生するノイズが他の電子機器に大きな影響を与えるようになってきている。 At the same time, the noise generated by the semiconductor element has come to have a significant influence on other electronic devices.

【0003】このような半導体素子を収容する半導体素子収納用パッケージは、一般に酸化アルミニウム質焼結体や窒化アルミニウム質焼結体・ムライト質焼結体・窒化珪素質焼結体等の電気絶縁材料から成り、その上面中央部に半導体素子を搭載するための凹状の搭載部を有する絶縁基体と、絶縁基体上面に搭載部を取り囲むように形成されるとともに絶縁基体側面に形成された接地導体と電気的に接続された導体層と、鉄−ニッケル−コバルト合金等から成り、絶縁基体上面の導体層に半田やろう材等により接合され電磁波の侵入や放射を防止する金属蓋体とから構成されている。 [0003] Semiconductor element storage package containing such a semiconductor device is generally an electrically insulating material such as sintered aluminum oxide or aluminum nitride sintered body, mullite sintered body, silicon nitride sintered bodies from comprises an insulating substrate having a mounting portion of the concave for mounting a semiconductor element on the upper central portion, the ground conductor and electrically formed in the insulating substrate side while being formed so as to surround the mounting portion in an insulating substrate top surface and connected to the conductor layer, an iron - nickel - consists cobalt alloy, is composed of a metal lid to prevent the entry and emission of the joined electromagnetic waves by solder bastard material or the like to the conductor layer of the insulating substrate top surface there.

【0004】しかしながら上記の半導体素子収納用パッケージでは、熱膨張係数の異なる絶縁基体と金属蓋体とを、弾性率が高く歪み等の応力を緩和しにくい半田やろう材等の金属により接合しているために、半導体素子が作動する際に発生する熱によって熱膨張係数の異なる絶縁基体と金属蓋体との間に大きな応力が発生するとともにこの応力が絶縁基体に作用して絶縁基体にクラックが入ってしまい、その結果、半導体素子収納用パッケージの気密封止が破れ、内部に収容する半導体素子を長期間にわたり正常、かつ安定に作動させることができないという欠点を有していた。 [0004] However, in the above semiconductor device package for housing, a different insulating substrate and a metal lid thermal expansion coefficient, and joined by a metal solder bastard material such as stress hardly alleviate such distortion high elastic modulus to have, cracks in the insulating base acts on the stress insulating substrate with large stress is generated between the thermal expansion coefficients of different insulating substrate and the metal cover member by the heat generated when the semiconductor element is operated It will enter, as a result, hermetically sealed semiconductor device housing package is torn, normally a semiconductor element housed inside for a long period of time and had a drawback that can not be stably operated.

【0005】他方、絶縁基体と金属蓋体との接合を、弾性率の低い導電性接着剤により行なう方法が提案されている。 [0005] On the other hand, bonding between the insulating substrate and the metal lid, a method of performing has been proposed by the lower conductive adhesive modulus of elasticity. この提案によれば、例えば微粉のカーボン粉末や金属粉末等の導電性粉末を熱硬化性樹脂等の樹脂に50〜 According to this proposal, for example, 50 to conductive powder such as carbon powder or metal powder pulverized into resin such as a thermosetting resin
200重量%添加混合した導電性接着剤を、スクリーン印刷法やディスペンサ法を用いて絶縁基体と金属蓋体との接合部分に塗布し、絶縁基体と金属蓋体との接合部分を重ね合わせ加圧しながら加熱することにより絶縁基体と金属蓋体とを接合するものであり、半導体素子が作動する際に発生する熱によって熱膨張係数の異なる絶縁基体と金属蓋体との間に大きな応力が発生したとしても、弾性率の低い導電性接着剤が応力を緩和して絶縁基体にクラックが入るのを有効に防止できるというものである。 200% by weight adding and mixing conductive adhesive, by a screen printing method or a dispenser method is applied to the joint portion between the insulating substrate and the metal lid, superimposed pressurized junction between the insulating substrate and the metal lid by heated it is intended to join the insulating substrate and the metal lid, large stress between the different insulating substrate and the metal lid thermal expansion coefficient by the heat generated when the semiconductor device operates is generated as also it is that less conductive adhesive modulus of elasticity can be effectively prevented from cracks in the relaxed insulating substrate stress.

【0006】しかしながら、このような導電性接着剤は導電性粉末が熱硬化性樹脂等の樹脂に対して50〜200重量%と高密度に充填されているために、接着剤中の樹脂の濡れ性が劣化して導電性接着剤と絶縁基体や金属蓋体との密着性が悪くなり、絶縁基体と金属蓋体とから成る容器の気密封止の信頼性が低下したり、また、導電性接着剤と金属蓋体および絶縁基体上面の導体層との接触抵抗値が増加してしまい、電磁波の放射を防ぐシールド効果や外部からの電磁波の侵入を防止するイミュニティ効果が低下してしまうという問題点を有していた。 However, in order such conductive adhesive to the conductive powder is densely packed with 50 to 200% by weight relative to the resin such as a thermosetting resin, wetting of the resin in the adhesive sex adhesion becomes poor of the conductive adhesive and the insulating substrate and the metal lid deteriorated, reliability may decrease the hermetically sealed container made of an insulating substrate and a metal lid, the conductive the adhesive and the metal lid and would be contact resistance between the conductor layer of the insulating substrate top surface is increased, a problem that immunity effect of preventing the electromagnetic waves from entering from the shielding effect and the outside to prevent the emission of electromagnetic waves is reduced He had a point.

【0007】このような問題点を解決するために、絶縁基体と金属蓋体とを接合する接着剤として、熱硬化性樹脂等の樹脂に平均粒子径が0.01〜5μm、圧縮強さが0. [0007] In order to solve such a problem, as the adhesive for joining the insulating substrate and the metal lid, the average particle size in a resin such as a thermosetting resin is 0.01 to 5 [mu] m, the compressive strength 0.
6〜5GPa程度の導電性粒子を0.5〜50重量%添加混合した異方性導電接着剤を用いることが提案されている。 The 6~5GPa degree of the conductive particles be used an anisotropic conductive adhesive agent added mixed 0.5-50 wt% is proposed.

【0008】この接着剤によれば、樹脂に対する導電性粒子の添加量を0.5〜50重量%とすることにより接着剤の濡れ性の悪化を防止できるとともに、樹脂に添加された個々の導電性粒子が金属蓋体および絶縁基体上面の導体層の両者と直接接触するために良好な導電性が得られるというものである。 According to the adhesive, with the deterioration of the wettability of the adhesives by the addition amount of the conductive particles to the resin and 0.5 to 50 wt% can be prevented individual conductive particles added to the resin There is that good conductivity is achieved in order to direct contact with both the conductive layer of the metal lid and the insulating substrate top surface.

【0009】 [0009]

【発明が解決しようとする課題】しかしながら、上記の異方性導電接着剤は、含有する導電性粒子の圧縮強さが [SUMMARY OF THE INVENTION However, the above-mentioned anisotropic conductive adhesive, compression strength of the conductive particles contained
0.6〜5GPa程度と高いことから、異方性導電接着剤を絶縁基体と金属蓋体との接合部分に塗布し両者の接合部分を重ね合わせ加圧しながら加熱硬化する際、導電性粒子が大きく変形することがなく導電性粒子と絶縁基体上面の導体層や金属蓋体との接触が点接触となってしまい、その結果、半導体素子が作動する際に発生する熱によって熱膨張係数の異なる絶縁基体と金属蓋体との間に発生する大きな応力によって導電性粒子と絶縁基体上面の導体層や金属蓋体との点接触部分が離れてしまい、導電性が低下してしまうという問題点を有していた。 Since about the high 0.6~5GPa, when cured by heating under pressure superposed joint portion of the applied both to the joint portion between the anisotropic conductive adhesive insulating substrate and the metal lid, the conductive particles are deformed largely it becomes contact of the conductive particles and the conductive layer and the metal lid of the insulating substrate top surface point contact without the, so that different insulating substrate coefficient of thermal expansion by the heat the semiconductor element is generated at the time of operation has a cause apart point contact portion of the conductive layer and the metal lid with the conductive particles by a large stress occurring insulating substrate upper surface between the metal lid, the problem that conductivity decreases which was.

【0010】また、絶縁基体と金属蓋体とを熱硬化性樹脂等の樹脂で接合する場合、その気密封止を完全とし信頼性のあるものとするためには樹脂の厚みを5μm以上とすることが好ましいが、樹脂の厚みを5μm以上とした場合、導電性粒子の平均粒子径が0.01〜5μmであることから絶縁基体上面の導体層および金属蓋体の両者と直接接触する導電性粒子の数が少なくなってしまい、さらに、樹脂の厚みが厚くなる程、直接接触する導電性粒子の数が極端に減少してしまい導電性が低下してしまうという問題点を有していた。 Further, when bonding the insulating substrate and the metal lid with a resin such as a thermosetting resin, and more 5μm thickness of the resin in order to make its hermetically sealed and completely reliable it is preferred, if the thickness of the resin was above 5 [mu] m, an average particle diameter of the conductive particles of the conductive particles in direct contact with both the conductive layer and the metal lid of the insulating substrate top surface since it is 0.01~5μm number becomes small, further, as the thickness of the resin is increased, the conductive number will decrease extremely conductive particles in direct contact had a problem that deteriorates.

【0011】本発明は、かかる従来技術の問題点に鑑み案出されたものであり、その目的は、外部への電磁波の放射および外部からの電磁波の侵入を有効に防止でき、 [0011] The present invention has been devised in view of the problems of the prior art, the object can effectively prevent the electromagnetic waves from entering from radiation and external electromagnetic waves to the outside,
かつ気密信頼性の高い半導体装置を提供することにある。 And to provide a highly airtight reliable semiconductor device.

【0012】 [0012]

【課題を解決するための手段】本発明の半導体装置は、 The semiconductor device of the present invention According to an aspect of the
上面に半導体素子の搭載部を有するとともに側面に接地導体が被着形成された絶縁基体と、搭載部に搭載された半導体素子と、絶縁基体の上面に搭載部を取り囲むように被着形成され、接地導体と電気的に接続された導体層と、絶縁基体の上面に間に導体層を挟んで導電性封止材を介して接合された導電性蓋体とから成る半導体装置であって、導電性封止材は熱硬化性樹脂を主成分とするとともに平均粒子径が5〜30μm、圧縮強さが1〜50MP An insulating substrate ground conductor on the side surface is deposited and formed and having a mounting portion of the semiconductor element on the upper surface, a semiconductor element mounted on the mounting portion, are deposited and formed so as to surround the mounting portion on the upper surface of the insulating substrate, a conductor layer that is electrically connected to the ground conductor, a semiconductor device comprising a sandwich in the conductive sealing member is bonded through a conductive lid conductor layer between the upper surface of the insulating substrate, conductive sex encapsulant average particle diameter is a principal component of the thermosetting resin is 5 to 30 [mu] m, compressive strength 1~50MP
aの有機系樹脂材料から成る粒子の表面に金属層を被覆して成る導電性粒子を含有することを特徴とするものである。 It is characterized in that it contains electrically conductive particles formed by covering a metal layer on the surface of the particles composed of an organic resin material a.

【0013】本発明の半導体装置によれば、絶縁基体と導電性蓋体とを熱硬化性樹脂を主成分とする導電性封止材を用いて封止したことから、半導体素子が作動する際に発生する熱によって熱膨張係数の異なる絶縁基体と導電性蓋体との間に大きな応力が発生したとしても、熱硬化性樹脂を主成分とする弾性率の低い導電性封止材が応力を緩和して絶縁基体にクラックが入るのを有効に防止することができる。 According to the semiconductor device of the present invention, an insulating substrate and a conductive lid since it was sealed with a conductive sealing material composed mainly of a thermosetting resin, when the semiconductor element is operated large even stress is generated, low conductivity sealing material elastic modulus composed mainly of thermosetting resin stress between the different insulating base and the conductive lid thermal expansion coefficient by heat generated relaxation to can effectively prevent the cracks in the insulating base.

【0014】また、本発明の半導体装置によれば、導電性封止材に含有される導電性粒子を構成する有機系樹脂材料から成る粒子の圧縮強さが1〜50MPaと低いことから、導電性封止材を絶縁基体の導体層と導電性蓋体との接合部分に塗布し両者の接合部分を重ね合わせ加圧しながら加熱硬化する際、導電性粒子が大きく変形し導電性粒子と絶縁基体上面の導体層や導電性蓋体との接触が面接触となり良好な電気的接続が可能となり、その結果、半導体素子が作動する際に発生する熱によって熱膨張係数の異なる絶縁基体と導電性蓋体との間に大きな応力が発生したとしても、この応力によって導電性粒子と絶縁基体上面の導体層や導電性蓋体との接触部分が離れて導電性が低下してしまうということもない。 Further, according to the semiconductor device of the present invention, the compressive strength of particles composed of an organic resin material constituting the conductive particles contained in the conductive sealing member from lower and 1 to 50 MPa, the conductive when heat curing under pressure superposed joint portion of the applied both to the joint portion of the sexual sealing material between the conductor layer and the conductive lid of the insulating substrate, the conductive particles are largely deformed conductive particles insulated substrate contact between the conductive layer and the conductive lid upper surface enables good electrical connection becomes surface contact, so that different insulating substrate coefficient of thermal expansion by the heat the semiconductor element is generated at the time of operation of the conductive cover even large stress between the body occurs, there is no fact lowered conductivity apart contact portions of the conductor layer and a conductive lid and the insulating substrate top surface conductive particles by the stress.

【0015】さらに、本発明の半導体装置によれば、導電性粒子の平均粒子径を5〜30μmとしたことから、絶縁基体と導電性蓋体とを封止する導電性封止材の厚みを5μm以上とすることができ、気密封止を信頼性のある完全なものすることができる。 Furthermore, according to the semiconductor device of the present invention, the average particle diameter of the conductive particles since it was 5 to 30 [mu] m, the thickness of the conductive sealing member for sealing an insulating substrate and a conductive lid can be 5μm or more, it is possible to be complete is the airtight sealing reliability.

【0016】 [0016]

【発明の実施の形態】以下、本発明の半導体装置を図面に基づき詳細に説明する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor device of the present invention in detail with reference to the accompanying drawings.

【0017】図1は本発明の半導体装置の実施の形態の一例を示す断面図であり、1は絶縁基体、2は半導体素子、3は導電性蓋体、4は導体層、5は接地導体、6は導電性封止材である。 [0017] Figure 1 is a sectional view showing an example of an embodiment of a semiconductor device of the present invention, 1 denotes an insulating substrate, 2 is a semiconductor device, the conductive lid 3, 4 conductor layers, 5 a ground conductor , 6 is a conductive sealing member.

【0018】絶縁基体1は、その上面の略中央部に半導体素子2を搭載するための凹状の搭載部1aが設けてあり、この搭載部1aには半導体素子2がガラス、樹脂、 The insulating substrate 1, Yes and the mounting portion 1a of the concave for mounting a semiconductor element 2 in a substantially central portion of the upper surface is provided, the semiconductor element 2 is glass in the mounting portion 1a, a resin,
ろう材等から成る接着剤を介して接着固定される。 It is adhesively fixed via an adhesive made of a brazing material or the like.

【0019】絶縁基体1は、酸化アルミニウム質焼結体やムライト質焼結体・窒化アルミニウム質焼結体・窒化珪素質焼結体・炭化珪素質焼結体等の電気絶縁材料から成り、例えば、酸化アルミニウム質焼結体から成る場合であれば、酸化アルミニウム、酸化珪素、酸化マグネシウム、酸化カルシウム等の原料粉末に適当な有機バインダ、溶剤、可塑剤、分散剤を添加混合して泥漿物を作り、この泥漿物を従来周知のドクターブレード法やカレンダーロール法等のシート成形法を採用しシート状にしてセラミックグリーンシート(セラミック生シート)を得、しかる後、それらセラミックグリーンシートに適当な打抜き加工を施すとともにこれを複数枚積層し、約16 The insulating substrate 1 is made of an electrically insulating material such as sintered aluminum oxide and mullite sintered-aluminum nitride sintered body, a silicon nitride sintered body, a silicon carbide sintered body, for example, , in the case made of sintered aluminum oxide, aluminum oxide, silicon oxide, magnesium oxide, suitable organic binder material powder, such as calcium oxide, solvent, plasticizer, mud 漿物 adding and mixing the dispersing agent making, to obtain a ceramic green sheet (ceramic raw sheet) by the mud 漿物 to employ a sheet forming method such as conventionally known doctor blade method or calendar roll method sheet, thereafter, a suitable punching them ceramic green sheets This laminating a plurality together subjected to processing, from about 16
00℃の高温で焼成することによって製作される。 It is manufactured by firing at a high temperature of 00 ° C..

【0020】また、絶縁基体1は、搭載部1a底面から下面にかけて複数個の配線導体層7が被着形成されており、この配線導体層7の搭載部1a底面部には半導体素子2の各電極がボンディングワイヤ8を介して電気的に接続され、また、絶縁基体1の下面に導出された部位には外部電気回路(図示せず)が半田等の接続部材を介して電気的に接続される。 Further, the insulating substrate 1, a plurality of wiring conductor layers 7 toward the lower surface of the mounting portion 1a bottom are deposited and formed, each of the mounting portion 1a to the bottom surface portion the semiconductor element 2 of the wiring conductor layer 7 electrodes are electrically connected via a bonding wire 8, also the site derived on the lower surface of the insulating substrate 1 external electric circuit (not shown) is electrically connected via a connecting member such as solder that.

【0021】配線導体層7は、半導体素子2の各電極を外部電気回路に電気的に接続する際の導電路として作用し、タングステン、モリブデン、マンガン等の高融点金属により形成され、例えばタングステン、モリブデン、 The wiring conductor layer 7 acts as a conductive path for connecting the respective electrodes of the semiconductor element 2 and electrically to the external electric circuit is formed of tungsten, molybdenum, a refractory metal such as manganese, for example, tungsten, molybdenum,
マンガン等の高融点金属粉末に適当な有機溶剤、溶媒、 Refractory metal powder in a suitable organic solvent such as manganese, solvents,
可塑剤等を添加混合して得た金属ペーストを従来周知のスクリーン印刷法等の厚膜手法を採用して絶縁基体1となるセラミックグリーンシートにあらかじめ印刷塗布・ Pre-printed coating to a ceramic green sheet metal paste obtained by adding and mixing a plasticizer or the like adopts a thick-film technique such conventionally known screen printing method as an insulating substrate 1,
穴埋めしておき、これをセラミックグリーンシートと同時に焼成することによって絶縁基体1の搭載部1a底面部から下面にかけて所定パターンに被着形成される。 Filling; then, it is deposited formed in a predetermined pattern over the lower surface of the mounting portion 1a bottom portion of the insulating substrate 1 by firing this ceramic green sheet and simultaneously.

【0022】なお、配線導体層7はその表面にニッケル、金等の良導電性で耐蝕性およびろう材との濡れ性が良好な金属をめっき法により1〜20μmの厚みに被着させておくと、配線導体層7の酸化腐蝕を有効に防止することができるとともに配線導体層7とボンディングワイヤ8との接続および配線導体層7と外部電気回路の配線導体との半田付けを強固となすことができる。 [0022] The wiring conductor layer 7 is allowed to deposited on 1~20μm thickness by plating wettability good metal of nickel, corrosion resistance and brazing material in good conductivity such as gold on the surface thereof When, it is made firmly soldered to the wiring conductors of the connection and the wiring conductor layer 7 and the external electric circuit of a wiring conductor layer 7 and the bonding wire 8 it is possible to effectively prevent oxidation corrosion of the wiring conductor layers 7 can. したがって、配線導体層7の酸化腐蝕を防止し、配線導体層7とボンディングワイヤ8との接続および配線導体層7と外部電気回路の配線導体との半田付けを強固となすには、 Therefore, to prevent oxidation corrosion of the wiring conductor layer 7, to firmly and forms a soldering the wiring conductors of the connection and the wiring conductor layer 7 and the external electric circuit of a wiring conductor layer 7 and the bonding wire 8,
配線導体層7の表面にニッケル、金等をめっき法により1〜20μmの厚みに被着させておくことが好ましい。 Nickel on the surface of the wiring conductor layer 7, it is preferably allowed to deposited to a thickness of 1~20μm by plating gold or the like.

【0023】また、絶縁基体1の上面には、搭載部1a Further, on the upper surface of the insulating substrate 1, the mounting portion 1a
を取り囲むとともに絶縁基体1の側面に被着形成された接地導体5と電気的に接続された導体層4が被着形成されている。 The ground conductor 5 that is deposited and formed which are electrically connected to the conductive layer 4 is deposited and formed on the side surface of the insulating substrate 1 surrounds a.

【0024】導体層4・接地導体5は、導電性蓋体3を外部の接地導体(図示せず)に電気的に接続する際の導電路として作用するとともに電磁波のパッケージ内部から外部への放射やパッケージ外部から内部への侵入を防止する機能を有し、タングステン、モリブデン、マンガン等の高融点金属により形成されている。 The conductive layer 4, the grounding conductor 5, the radiation from inside the electromagnetic wave of the package as well as act as a conductive path for connecting the conductive cover 3 to electrically external ground conductor (not shown) to the outside has a function of preventing intrusion to inside or outside of the package, tungsten, molybdenum, is formed of a refractory metal such as manganese.

【0025】導体層4・接地導体5は、タングステン、 [0025] The conductor layer 4-ground conductor 5, tungsten,
モリブデン、マンガン等の高融点金属粉末に適当な有機溶剤、溶媒、可塑剤等を添加混合して得た金属ペーストを従来周知のスクリーン印刷法等の厚膜手法を採用して絶縁基体1となるセラミックグリーンシートにあらかじめ印刷塗布しておき、これをセラミックグリーンシートと同時に焼成することによって絶縁基体1の上面および側面に所定パターンに被着形成される。 Consisting of molybdenum, a refractory metal powder in a suitable organic solvent such as manganese, solvents, and the thick-film technique adopted by the insulating base 1, such as a conventional metal paste obtained by adding and mixing a plasticizer such as a well-known screen printing method advance the print applied to the ceramic green sheet is deposited formed in a predetermined pattern on the upper surface and the side surface of the insulating substrate 1 by firing this ceramic green sheet and simultaneously.

【0026】なお、接地導体5は、絶縁基体1の側面に全面的にあるいはスリット状に形成され、使用周波数に合わせてその面積や配置を変更することにより、電磁波の放射や侵入を効果的に防止することができる。 [0026] Incidentally, the ground conductor 5 is formed entirely on or slit-shaped in the side surface of the insulating substrate 1, by changing the area and arrangement according to the use frequency effectively the electromagnetic radiation and penetration it is possible to prevent. また、 Also,
接地導体5を絶縁基体1の下面まで導出することにより、より効果的に電磁波の放射や侵入を防止することができる。 By deriving a ground conductor 5 to the lower surface of the insulating substrate 1 can be prevented more effectively electromagnetic radiation or intrusion.

【0027】また、導体層4・接地導体5はその表面に配線導体層7と同様な理由によりニッケル、金等の良導電性で耐蝕性およびろう材との濡れ性が良好な金属をめっき法により1〜20μmの厚みに被着させておくことが好ましい。 [0027] The plating method is good metallic wettability with the conductive layer 4, the ground conductor 5 is nickel the same reason as the wiring conductor layers 7 on its surface, corrosion resistance and brazing material in good conductivity, such as gold it is preferably allowed to deposited to a thickness of 1~20μm by.

【0028】絶縁基体1の上面には、導電性蓋体3が間に導体層4を挟んで導電性封止材6を介して接合されている。 [0028] the upper surface of the insulating substrate 1, a conductive cover 3 is bonded via a conductive sealing member 6 across the conductive layer 4 in between.

【0029】導電性蓋体3は、半導体素子2をパッケージ内部に気密に封止する作用を成すとともに電磁波のパッケージ内部から外部への放射やパッケージ外部から内部への侵入を防止する機能を有し、鉄・アルミニウム・ The conductive lid 3 has a function of preventing from entering the interior of the semiconductor element 2 from the radiation and outside the package from inside the electromagnetic wave of the package together with an action to be hermetically sealed inside the package to the outside , iron, aluminum,
銅・タングステン・鉄−ニッケル合金・鉄−コバルト合金・鉄−ニッケル−コバルト合金等の金属材料や、酸化アルミニウム質焼結体・窒化アルミニウム質焼結体等のセラミックス材料やABS樹脂・フェノール樹脂・ポリエステル樹脂等の樹脂材料の表面を金属被膜で覆った導電性材料により形成されている。 Copper-tungsten-iron - nickel alloy, an iron - cobalt alloy, an iron - nickel - or a metal material such as cobalt alloy, ceramic material or ABS resin phenolic resins such as aluminum oxide sintered body, an aluminum nitride sintered body, It is formed of a conductive material covering the surface of the resin material such as polyester resin in the metal coating.

【0030】導電性蓋体3が金属材料から成る場合は、 [0030] When a conductive cover 3 is made of metallic material,
鉄−ニッケル合金・鉄−コバルト合金・鉄−ニッケル− Iron - nickel alloy, iron - cobalt alloy, iron - nickel -
コバルト合金等の鉄合金を使用することにより、導電性蓋体3と絶縁基体1との熱膨張係数を近似させることができ、導電性蓋体3と絶縁基体1との良好な接合信頼性を得ることができる。 The use of iron alloys such as cobalt alloy, the thermal expansion coefficient of the conductive cover 3 and the insulating substrate 1 can be approximated to the conductive cover 3 and a good bonding reliability between the insulating substrate 1 it is possible to obtain.

【0031】このような金属材料から成る導電性蓋体3 The conductive lid 3 made of such a metallic material
は、鉄−ニッケル合金・鉄−コバルト合金・鉄−ニッケル−コバルト合金等のインゴット(塊)を従来周知の打抜き加工法等を採用し、所定の形状に形成することにより形成される。 An iron - nickel alloy, an iron - cobalt alloy, an iron - nickel - an ingot such as cobalt alloy (ingot) adopted conventionally known stamping method or the like, it is formed by forming a predetermined shape.

【0032】なお、導電性蓋体3が鉄−ニッケル合金・ [0032] The conductive lid 3 iron - nickel alloy,
鉄−コバルト合金・鉄−ニッケル−コバルト合金等の鉄合金から成る場合は、導電性蓋体3の腐蝕防止のために、その表面をニッケルや金・半田等の各種金属めっきにより被覆することが好ましい。 Iron - cobalt alloy, an iron - nickel - if made of an iron alloy such as a cobalt alloy, for corrosion prevention of the conductive cover 3, the surface be coated with various metal plating of nickel and gold, solder or the like preferable.

【0033】また、導電性蓋体3は、導電性蓋体3が例えば酸化アルミニウム質焼結体や窒化アルミニウム質焼結体等のセラミックス材料の表面を金属被膜で覆った導電性材料から成る場合、酸化アルミニウム・窒化アルミニウム等の原料粉末に適当な有機溶剤・溶媒を添加混合して原料粉末を調整するとともにこの原料粉末をプレス成形によって所定形状に成形し、しかる後、この成形体を約1600℃の温度で焼成し、さらに、この焼成体の表面全体に無電解めっき法によりニッケルや金・半田等の各種金属被膜を被着させることにより製作される。 [0033] The conductive lid 3, when the conductive lid 3 is for example made of the surface of the ceramic material such as sintered aluminum oxide or aluminum nitride sintered body of a conductive material covered with metal coating , the raw material powder together with the added and mixed in a suitable organic solvent, solvent to raw material powder such as aluminum oxide, aluminum nitride adjusting the raw material powder is molded into a predetermined shape by press molding, thereafter, the molded body about 1600 fired at ℃ temperature, further, it is fabricated by depositing the various metal coating nickel and gold, solder or the like by electroless plating on the entire surface of the sintered body.

【0034】さらに、導電性蓋体3は、それが例えばA Furthermore, the conductive lid 3, it is for example A
BS樹脂やフェノール樹脂等の樹脂材料の表面を金属被膜で覆った導電性材料から成る場合、ABS樹脂やフェノール樹脂等の樹脂材料等から成る薄板を、従来周知の打抜き加工法等を採用して所定の形状に形成し、しかる後、表面全体に無電解めっき法によりニッケルや金・半田等の各種金属被膜を被着させることにより製作される。 When made the surface of the resin material such as BS resin, phenolic resin of a conductive material covered with a metal coating, a thin plate made of a resin material such as ABS resin, phenolic resin, employ conventionally known punching method formed into a predetermined shape, and thereafter, various metal coating of nickel, gold, solder or the like by electroless plating on the entire surface is fabricated by depositing. あるいは、ABS樹脂やフェノール樹脂等の樹脂材料から成る薄板の表面にニッケルや金・銅等から成る金属箔をあらかじめ被着させておき、しかる後、従来周知の打抜き加工法等を採用して所定の形状に製作してもよい。 Alternatively, leave a metal foil made on the surface of the thin plate made of a resin material such as ABS resin, phenolic resin from nickel, gold, copper or the like is previously deposited, after which employs a conventional known stamping method given it may be made of the shape.

【0035】導電性封止材6は、絶縁基体1と導電性蓋体3とを接合する作用を成すとともに絶縁基体1上面の導体層4と導電性蓋体3とを電気的に接続する機能を有し、熱硬化性樹脂を主成分とするとともに平均粒子径が5〜30μm、圧縮強さが1〜50MPaの有機系樹脂材料から成る粒子の表面に金属層を被覆して成る導電性粒子を含有している。 The conductive sealing member 6 has a function of electrically connecting the insulating substrate 1 and the insulating base 1 conductor layer 4 and the conductive lid 3 of the top surface with conductive forming a function of bonding the lid member 3 has an average particle diameter of 5 to 30 [mu] m, compressive strength of the organic surface metal layer coated with conductive particles comprising particles made of a resin material 1~50MPa is a principal component of the thermosetting resin It contains a.

【0036】本発明によれば、絶縁基体1と導電性蓋体3とを熱硬化性樹脂を主成分とする導電性封止材6を用いて封止したことから、半導体素子2が作動する際に発生する熱によって熱膨張係数の異なる絶縁基体1と導電性蓋体3との間に大きな応力が発生したとしても、熱硬化性樹脂を主成分とする弾性率の低い導電性封止材6が応力を緩和して絶縁基体1にクラックが入るのを有効に防止することができる。 According to the present invention, since the insulating substrate 1 and the conductive lid 3 sealed with a conductive sealing material 6 consisting mainly of thermosetting resin, the semiconductor element 2 is operated large even stress is generated, low conductivity modulus composed mainly of thermosetting resin sealing material between the different insulating base 1 and the conductive lid 3 coefficients of thermal expansion by heat generated during 6 can be effectively prevented from cracking in the insulating substrate 1 relaxes the stress.

【0037】このような熱硬化性樹脂としては、耐湿性あるいは接合強度の観点から緻密な3次元網目構造を有するエポキシ樹脂を主成分とする熱硬化性樹脂が好ましく、ビスフェノールA型エポキシ樹脂やビスフェノールA変性エポキシ樹脂・ビスフェノールF型エポキシ樹脂・フェノールノボラック型エポキシ樹脂・クレゾールノボラック型エポキシ樹脂・特殊ノボラック型エポキシ樹脂・フェノール誘導体エポキシ樹脂・ビフェノール骨格型エポキシ樹脂等のエポキシ樹脂にイミダゾール系・アミン系・リン系・ヒドラジン系・イミダゾールアダクト系・アミンアダクト系・カチオン重合系・ジシアンジアミド系等の硬化剤を添加したもので形成されている。 [0037] As such a thermosetting resin, the thermosetting resin is preferably mainly composed of an epoxy resin having a dense three-dimensional network structure from the viewpoint of moisture resistance or bonding strength, bisphenol A type epoxy resin and bisphenol imidazole-amine to a modified epoxy resin bisphenol F-type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, special novolak type epoxy resin, a phenol derivative epoxy resin, biphenol skeleton-type epoxy resin having an epoxy resin, It is formed of a material obtained by adding phosphorus-based, hydrazine-imidazole adduct system, amine adduct-cationic polymerization, dicyandiamide, etc. of the curing agent.

【0038】なお、2種類以上のエポキシ樹脂を混合して用いてもよく、さらにシリコンゴムやシリコンレジン・LDPE・HDPE・PMMA・架橋PMMA・ポリスチレン・架橋ポリスチレン・エチレン−アクリル共重合・ポリメタクリル酸エチル・ブチルアクリレート・ウレタン等の軟質微粒子から成る充填材を添加してもよい。 It should be noted, two or more epoxy resins may be used as a mixture, further a silicon rubber or silicon resin, LDPE, HDPE, PMMA, crosslinked PMMA, polystyrene cross-linked polystyrene-ethylene - acrylic copolymer, polymethacrylic acid a filler made of a soft particles such as ethyl acrylate-urethane may be added.

【0039】また、本発明によれば、導電性封止材6に含有される導電性粒子を構成する有機系樹脂材料から成る粒子の圧縮強さが1〜50MPaと低いことから、導電性封止材6を絶縁基体1上面の導体層4と導電性蓋体3 Further, according to the present invention, the compressive strength of particles composed of an organic resin material constituting the conductive particles contained in the conductive sealing member 6 from lower and 1 to 50 MPa, the conductive seal conductor layers of a sealant 6 insulating base 1 top 4 and the conductive lid 3
との接合部分に塗布し両者の接合部分を重ね合わせ加圧しながら加熱硬化する際、導電性粒子が大きく変形し導電性粒子と絶縁基体1上面の導体層4や導電性蓋体3との接触が面接触となり良好な電気的接続が可能となり、 Contact bonding applied when heat cured under pressure overlay the joint portion of both the portions, the insulated conductive particles are largely deformed conductive particles substrate 1 top conductor layer 4 and the conductive lid 3 of the There enables good electrical connection becomes surface contact,
その結果、半導体素子2が作動する際に発生する熱によって熱膨張係数の異なる絶縁基体1と導電性蓋体3との間に大きな応力が発生したとしても、この応力によって導電性粒子と絶縁基体1上面の導体層4や導電性蓋体3 As a result, even large stress between the different insulating base 1 and the conductive lid 3 coefficients of thermal expansion by the heat generated when the semiconductor element 2 is activated occurs, the insulating base conductive particles by the stress 1 the upper surface conductor layer 4 and the conductive lid 3
との接触部分が離れて導電性が低下してしまうということもない。 Nor that the conductive contact portion is separated is lowered with.

【0040】さらに、導電性封止材6は、導電性粒子の含有量が0.5〜50重量%であることから、導電性封止材6中の樹脂の濡れ性が劣化して導電性封止材6と絶縁基体1や導電性蓋体3との密着性が悪くなることはない。 [0040] Furthermore, the conductive sealing member 6, since the content of the conductive particles is 0.5 to 50 wt%, the conductive sealing wettability of the conductive sealing resin sealing material in 6 deteriorates It never deteriorates adhesion between the wood 6 and the insulating substrate 1 and a conductive cover 3.

【0041】なお、導電性封止材6は、導電性粒子の含有量が0.5重量%未満であると導電性が低下する傾向があり、また、50重量%を超えると樹脂の濡れ性が低下する傾向がある。 [0041] Note that the conductive sealing member 6, the content of the conductive particles tends to decrease conductivity is less than 0.5 wt%, also decreases the wettability of the resin exceeds 50 wt% there is a tendency to. したがって、導電性粒子の含有量は0.5 Accordingly, the content of the conductive particles is 0.5
〜50重量%の範囲が好ましい。 Preferably in the range of 50 wt%.

【0042】導電性粒子を構成する有機系樹脂材料の粒子としては、例えばアクリル系樹脂やフェノール系樹脂・ウレタン系樹脂・ベンゾグアナミン樹脂・メラミン系樹脂・ポリジビニルベンゼン・ポリスチレン樹脂等の各種有機系樹脂材料から成る粒子が用いられる。 [0042] The particles of the organic-based resin material for the conductive particles, for example, acrylic resins, phenolic resins, urethane resins, benzoguanamine resins, melamine resins, polydivinyl various organic resins such as benzene polystyrene resin particles made of material is used.

【0043】有機系樹脂材料の粒子の圧縮強さが1MP The compressive strength of the particles of the organic resin material is 1MP
a未満では、有機系樹脂材料の粒子の弾性率が低すぎて加圧しながら加熱硬化する際の加重で導電性粒子がつぶれてしまい、導電性粒子と導体層4および導電性蓋体3 In less than a, the organic elastic modulus of the particles of the resin material will be crushed weighted with conductive particles at the time of heat-curing under pressure too low, the conductive particles and the conductor layer 4 and the conductive lid 3
との密着性が低下して良好な導電性が得られなくなる傾向があり、また、圧縮強さが50MPaを超えると弾性率が高くなり過ぎ、加圧しながら加熱硬化する際の加重で導電性粒子が十分に変形することが困難となり、導電性粒子と導体層4および導電性蓋体3との接触が点接触と成ってしまい、その結果、半導体素子2が作動する際に発生する熱によって熱膨張係数の異なる絶縁基体1と導電性蓋体3との間に発生する大きな応力によって導電性粒子と絶縁基体1上面の導体層4や導電性蓋体3との点接触部分が離れてしまい、導電性が低下してしまう傾向がある。 Good adhesion is lowered and conductivity can tend to not be obtained, and when the compressive strength is more than 50MPa only elastic modulus increased, weighted with conductive particles at the time of heat-curing under pressure heat by becomes difficult to sufficiently deformed, the contact between the conductive particles and the conductor layer 4 and the conductive cover member 3 becomes a point contact, as a result, heat generated when the semiconductor element 2 is operated different insulating base 1 and the point contact portion between the conductive particles by a large stress generated between the insulating substrate 1 top conductor layer 4 and the conductive cover member 3 between the conductive cover 3 of the expansion coefficients causes away, conductivity tends to decrease. したがって、有機系樹脂材料の粒子の圧縮強さは1〜50MPaの範囲であることが好ましい。 Therefore, it is preferable that the compressive strength of the particles of the organic resin material is in the range of 1 to 50 MPa.

【0044】また、導電性粒子は、有機系樹脂材料の粒子の表面に、下地層としての膜厚10〜500nmのニッケル層とこの表面の膜厚10〜100nmの金層とから成る金属層を被覆して形成されている。 [0044] Further, conductive particles, the surfaces of the particles of the organic resin material, a metal layer comprising a nickel layer having a thickness of 10~500nm as an underlying layer and a gold layer having a thickness of 10~100nm of this surface coating to be formed. 金属層の表面を形成する金は化学的に安定で導電性粒子の酸化腐蝕を有効に防止する作用なし、また、下地層を形成するニッケルは有機系樹脂材料の粒子の表面に金を強固に接合させる作用を成す。 Gold forming the surface of the metal layer is chemically no action to effectively prevent oxidation corrosion of the stable conductive particles and nickel to form the underlayer strongly gold on the surface of the particles of the organic resin material an action to be joined.

【0045】ニッケル層の膜厚が10nm未満であると、 [0045] When the thickness of the nickel layer is less than 10 nm,
有機系樹脂材料から成る粒子の表面に金層を強固に接合することが困難となる傾向があり、また、500nmを超えるとニッケル層が有機系樹脂材料から成る粒子の表面から剥離し易くなる傾向がある。 Tend to be difficult to firmly bond the gold layer on the surface of the particles composed of an organic resin material and a nickel layer is easily peeled off from the surface of the particles composed of an organic resin material exceeds 500nm tendency there is. したがって、ニッケル層の膜厚は10〜500nmの範囲が好ましい。 Therefore, the thickness of the nickel layer in a range of 10~500nm is preferred. さらに、金層の膜厚が10nm未満であると、導電性封止材6の抵抗値が増加する傾向があり、また、100nmを超えるとニッケル層と金層とから成る金属層が有機系樹脂材料から成る粒子の表面から剥離し易くなる傾向がある。 Further, if the thickness of the gold layer is less than 10 nm, there is a tendency that the resistance value of the conductive sealing member 6 is increased, also, the metal layer comprising a nickel layer and a gold layer exceeds 100nm organic resin It tends to be easily peeled from the surface of the particles composed of material. したがって、金層の膜厚は10〜100nmの範囲が好ましい。 Therefore, the thickness of the gold layer is in the range of 10~100nm is preferred.

【0046】このような有機系樹脂材料から成る粒子の表面に金属層を形成した導電性粒子は、例えば平均粒子径が5〜30μmのアクリル系樹脂表面に無電解めっきにより、まずニッケルめっき層を膜厚10〜500nmとなるように被着形成し、その後、金めっき層を膜厚10〜100 The conductive particles forming a metal layer on the surface of particles consisting of such organic-based resin material, for example, by electroless plating average particle diameter in the acrylic resin surface of 5 to 30 [mu] m, the nickel plating layer First, deposited formed to a thickness 10 to 500 nm, then the thickness of the gold plating layer 10 to 100
nmと成るように被着形成することによって形成される。 It is formed by depositing formed in such a way that nm.

【0047】また、導電性粒子の平均粒子径が5μm未満の場合、良好な導電性を得るために導電性封止材6の厚みを5μm未満とする必要があるが、導電性封止材6 Further, when the average particle diameter of the conductive particles is less than 5 [mu] m, it is necessary to be less than 5 [mu] m the thickness of the conductive sealing member 6 in order to obtain good conductivity, the conductive sealing member 6
の厚みが5μm未満では絶縁基体1と導電性蓋体3との気密封止を完全なものとすることが困難となる傾向があり、また、30μmを超えると加圧しながら加熱硬化する際の加重で導電性粒子が大きく変形して金属被膜が破損し、良好な導電性を得られなくなる傾向がある。 The thickness is less than 5μm tend to be difficult to be complete hermetic sealing of the insulating base 1 and the conductive cover 3, also weighting at the time of heat-curing while applying pressure exceeds 30μm in the conductive particles is greatly deformed metal coating is broken, tends to not be obtained a good conductivity. したがって、導電性粒子の平均粒子径は5〜30μmの範囲とすることが好ましい。 Therefore, the average particle diameter of the conductive particles is preferably in a range of 5 to 30 [mu] m.

【0048】さらに、導電性封止材6の厚みは5〜25μ [0048] Further, the thickness of the conductive sealing member 6 is 5~25μ
mの範囲が好ましく、導電性封止材6の厚みが5μm未満では絶縁基体1と導電性蓋体3との気密封止を完全なものとすることが困難となる傾向があり、また、25μm Is preferably in the range of m, is less than the thickness of the conductive sealing member 6 is 5μm tend to be difficult to be complete hermetic sealing of the insulating base 1 and the conductive lid 3, also, 25 [mu] m
を超えると導電性封止材6の耐湿性が低下してしまう傾向がある。 By weight, the moisture resistance of the conductive sealing member 6 tends to decrease. したがって、導電性封止材6の厚みは5〜25 Therefore, the thickness of the conductive sealing member 6 5-25
μmの範囲であることが好ましい。 It is preferably in the range of [mu] m.

【0049】かくして上述の半導体装置によれば、絶縁基体1の搭載部1a底面に半導体素子2をガラス、樹脂、ろう材等から成る接着材を介して接着固定するとともに半導体素子2の各電極をボンディングワイヤ8により配線導体層7に接続させ、しかる後、絶縁基体1と導電性蓋体3とを間に導体層4を挟んで導電性封止材6を介して接続することにより、絶縁基体1と導電性蓋体3 [0049] Thus, according to the above-described semiconductor device, a glass semiconductor element 2 to the mounting portion 1a bottom surface of the insulating base 1, the resin, the electrodes of the semiconductor element 2 with adhered and fixed through an adhesive made of the brazing material or the like is connected to the wiring conductor layer 7 by a bonding wire 8, whereafter, by connecting via the conductive sealing member 6 across the conductive layer 4 between the insulating substrate 1 and the conductive cover 3, an insulating substrate 1 and the conductive lid 3
とから成る容器の内部に半導体素子2を気密に収容することによって最終製品としての半導体装置が完成する。 The semiconductor device as a final product is completed by accommodating the semiconductor element 2 hermetically in the interior of the container consisting of.

【0050】なお、本発明は上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば種々の変更は可能であり、例えば図2に断面図で示すように、接地導体を絶縁基体1の側面ではなく、絶縁基体1の内部に貫通した貫通接地導体9としてもよい。 [0050] The present invention is not limited to the embodiments described above, various modifications as long as it does not depart from the gist of the present invention can be, for example, as shown in cross section in FIG. 2 , rather than the side surface of the insulating substrate 1 to the ground conductor may be a through grounding conductor 9 which passes through the interior of the insulating base 1.
また、半導体素子2の各電極と配線導体層7との電気的接続を半田バンプ10等の導電性接続部材で接続してもよい。 It is also possible to connect the electrical connection between the electrodes of the semiconductor element 2 and the wiring conductor layer 7 with the conductive connection member of solder bumps 10 or the like.

【0051】 [0051]

【発明の効果】本発明の半導体装置によれば、絶縁基体と導電性蓋体とを熱硬化性樹脂を主成分とする導電性封止材を用いて封止したことから、半導体素子が作動する際に発生する熱によって熱膨張係数の異なる絶縁基体と導電性蓋体との間に大きな応力が発生したとしても、熱硬化性樹脂を主成分とする弾性率の低い導電性封止材が応力を緩和して絶縁基体にクラックが入るのを有効に防止することができる。 According to the semiconductor device of the present invention, since it has an insulating base and the conductive lid sealed with a conductive sealing material composed mainly of a thermosetting resin, the semiconductor element is operated even large stress between the different insulating base and the conductive lid thermal expansion coefficient is generated by the heat generated at the time of a low electrically conductive sealing member of elastic modulus as a main component thermosetting resin stress relaxation to a can effectively prevent the cracks in the insulating base.

【0052】また、本発明の半導体装置によれば、導電性封止材に含有される導電性粒子の圧縮強さが1〜50M [0052] Further, according to the semiconductor device of the present invention, the compressive strength of the conductive particles contained in the conductive encapsulant 1~50M
Paと低いことから、導電性封止材を絶縁基体の導体層と導電性蓋体との接合部分に塗布し両者の接合部分を重ね合わせ加圧しながら加熱硬化する際、導電性粒子が大きく変形し導電性粒子と絶縁基体上面の導体層や導電性蓋体との接触が面接触となり良好な電気的接続が可能となり、その結果、半導体素子が作動する際に発生する熱によって熱膨張係数の異なる絶縁基体と導電性蓋体との間に大きな応力が発生したとしても、この応力によって導電性粒子と絶縁基体上面の導体層や導電性蓋体との接触部分が離れて導電性が低下してしまうということもない。 Since Pa and low, when the heat-curing under pressure superposed joint portion of the applied both to the joint portion of the conductive sealing member and the conductive layer and the conductive lid of the insulating substrate, the conductive particles are deformed largely contact between the conductive particles and the conductive layer or a conductive lid insulating substrate top surface enables good electrical connection becomes surface contact, so that the thermal expansion coefficient by the heat generated when the semiconductor element is operated different large stress between the insulating substrate and the conductive cover member even occurs, conductivity is decreased apart contact portions of the conductive particles and the conductive layer or a conductive lid insulating substrate top surface by the stress It never arises in that.

【0053】さらに、本発明の半導体装置によれば、導電性粒子の平均粒子径を5〜30μmとしたことから、絶縁基体と導電性蓋体とを封止する導電性封止材の厚みを5μm以上とすることができ、気密封止を信頼性のある完全なものすることができる。 [0053] Further, according to the semiconductor device of the present invention, the average particle diameter of the conductive particles since it was 5 to 30 [mu] m, the thickness of the conductive sealing member for sealing an insulating substrate and a conductive lid can be 5μm or more, it is possible to be complete is the airtight sealing reliability.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の半導体装置の一実施例を示す断面図である。 1 is a cross-sectional view showing an embodiment of a semiconductor device of the present invention.

【図2】本発明の半導体装置の他の実施例を示す断面図である。 2 is a sectional view showing another embodiment of a semiconductor device of the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

1・・・・・・・絶縁基体 1a・・・・・・搭載部 2・・・・・・・半導体素子 3・・・・・・・導電性蓋体 4・・・・・・・導体層 5・・・・・・・接地導体 6・・・・・・・導電性封止材 7・・・・・・・配線導体層 1 ............ insulating substrate 1a · · · · · · mounting part 2 ......... semiconductor element 3 ............ conductive cover 4 ....... conductor layer 5 ....... ground conductor 6 ....... conductive sealing member 7 ....... wiring conductor layer

Claims (3)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 上面に半導体素子の搭載部を有するとともに側面に接地導体が被着形成された絶縁基体と、前記搭載部に搭載された半導体素子と、前記絶縁基体の上面に前記搭載部を取り囲むように被着形成され、前記接地導体と電気的に接続された導体層と、前記絶縁基体の上面に間に前記導体層を挟んで導電性封止材を介して接合された導電性蓋体とから成る半導体装置であって、前記導電性封止材は熱硬化性樹脂を主成分とするとともに平均粒子径が5〜30μm、圧縮強さが1〜50MPaの有機系樹脂材料から成る粒子の表面に金属層を被覆して成る導電性粒子を含有することを特徴とする半導体装置。 And 1. A dielectric substrate a ground conductor on the side surface is deposited and formed and having a mounting portion of the semiconductor element on the upper surface, a semiconductor element mounted on the mounting portion, the mounting portion on the upper surface of the insulating substrate is deposited and formed so as to surround, the ground conductor and electrically connected to the conductor layer, the insulating substrate of the conductive cap which is bonded via the conductive sealing member across the conductive layer between the top surface a semiconductor device comprising a body, said conductive sealing member has a mean particle size is a principal component of the thermosetting resin 5 to 30 [mu] m, particle compressive strength made of an organic resin material 1~50MPa wherein a containing conductive particles formed by covering a metal layer on the surface of the.
  2. 【請求項2】 前記導電性封止材中の前記導電性粒子の含有量が0.5〜50重量%であることを特徴とする請求項1記載の半導体装置。 2. A semiconductor device according to claim 1, wherein the content of the conductive particles in the conductive sealing member is characterized in that 0.5 to 50 wt%.
  3. 【請求項3】 前記金属層は、膜厚10〜500nmのニッケル層を下地とし、該ニッケル層上に膜厚10〜1 Wherein the metal layer is a nickel layer having a thickness of 10~500nm a base thickness on the nickel layer 10 to 1
    00nmの金層を被覆して成ることを特徴とする請求項1または請求項2記載の半導体装置。 The semiconductor device according to claim 1 or claim 2, wherein the formed by coating the gold layer nm.
JP2000126839A 2000-04-27 2000-04-27 Semiconductor device Pending JP2001308217A (en)

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