JP2001308217A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To resolve the problem of deterioration of conductivity between the conductor layer on the upper surface of an insulating board and a metal cover having different heat expansion coefficients, caused by the stress which is generated by the heat generated when a semiconductor element operates. SOLUTION: This semiconductor device is composed of the insulating board 1 having a loading part 1a of the semiconductor element 2 on the upper surface and the grounding conductor 5 on the side surface, the semiconductor element 2 loaded on the loading part 1a, the conductor layer 4 formed to surround the loading part 1a on the upper surface of the insulating substrate 1 and connected to the grounding conductor 5 electrically, and the conductive cover 3 interposing the conductor layer 4 and being connected through the conductive sealing material 6 in the upper surface of the insulating substrate 1. The conductive sealing material 6 contains a thermosetting resin as a main component and contains the conductive particles whose surface of the core which is composed of organic materials which are 5-30 μm in average particle diameter and 1-50 MPa in compressive strength.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a shielding effect for preventing radiation of electromagnetic waves to the outside and an immunity effect for preventing invasion of electromagnetic waves from the outside, and more particularly to a semiconductor device having a high frequency semiconductor element mounted thereon. The present invention relates to a semiconductor device in a mobile communication field represented by a mobile phone.

[0002]

2. Description of the Related Art In recent years, the performance of mobile communication devices has been rapidly improved, and accordingly, semiconductor devices have been driven at a high speed, making them extremely susceptible to noise. At the same time, the noise generated by the semiconductor element has been greatly affecting other electronic devices.

A package for accommodating a semiconductor element for accommodating such a semiconductor element is generally made of an electrically insulating material such as an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, and a silicon nitride sintered body. An insulating base having a concave mounting portion for mounting a semiconductor element on a central portion of the upper surface thereof; and a ground conductor formed on the upper surface of the insulating base so as to surround the mounting portion and formed on a side surface of the insulating base. And a metal cover made of iron-nickel-cobalt alloy or the like, which is joined to the conductor layer on the upper surface of the insulating base by solder, brazing material, or the like to prevent intrusion and radiation of electromagnetic waves. I have.

However, in the above-mentioned package for housing a semiconductor element, an insulating base having a different coefficient of thermal expansion and a metal lid are joined by a metal such as solder or brazing material having a high elastic modulus and hardly relaxing stress such as distortion. Therefore, heat generated when the semiconductor element operates causes a large stress between the insulating base and the metal lid having different thermal expansion coefficients, and this stress acts on the insulating base to cause cracks in the insulating base. As a result, the hermetic sealing of the semiconductor element housing package is broken, and the semiconductor element housed inside cannot be normally and stably operated for a long period of time.

[0005] On the other hand, there has been proposed a method of joining an insulating base and a metal lid with a conductive adhesive having a low elastic modulus. According to this proposal, for example, a conductive powder such as fine carbon powder or metal powder is added to a resin such as a thermosetting resin by 50 to 50%.
A conductive adhesive mixed with 200% by weight is applied to the joint between the insulating base and the metal lid using a screen printing method or a dispenser method, and the joint between the insulating base and the metal lid is overlapped and pressed. While heating, the insulating base and the metal lid are joined to each other, and heat generated when the semiconductor element operates causes a large stress between the insulating base and the metal lid having different thermal expansion coefficients. Even so, the conductive adhesive having a low elastic modulus can relieve the stress and effectively prevent the insulating base from cracking.

However, such a conductive adhesive has a high density of 50 to 200% by weight of a conductive powder in a resin such as a thermosetting resin. And the adhesion between the conductive adhesive and the insulating base or the metal lid is deteriorated, and the reliability of hermetic sealing of the container composed of the insulating base and the metal lid is reduced. The contact resistance between the adhesive and the metal layer and the conductor layer on the upper surface of the insulating base increases, and the shielding effect that prevents electromagnetic wave radiation and the immunity effect that prevents intrusion of electromagnetic waves from the outside decrease. Had a point.

In order to solve such problems, as an adhesive for joining the insulating base and the metal lid, a resin such as a thermosetting resin has an average particle diameter of 0.01 to 5 μm and a compressive strength of 0.1 to 0.5 μm.
It has been proposed to use an anisotropic conductive adhesive obtained by adding and mixing 0.5 to 50% by weight of conductive particles of about 6 to 5 GPa.

According to this adhesive, by setting the amount of the conductive particles to the resin to be 0.5 to 50% by weight, it is possible to prevent the wettability of the adhesive from being deteriorated, and to make the individual conductive particles added to the resin. Is in direct contact with both the metal lid and the conductor layer on the upper surface of the insulating base, so that good conductivity can be obtained.

[0009]

However, the above-described anisotropic conductive adhesive has a low compressive strength of the conductive particles contained therein.
Because the anisotropic conductive adhesive is applied to the joint between the insulating base and the metal lid, and the two joints are superposed and pressurized and heat-cured, the conductive particles are greatly deformed because they are as high as about 0.6 to 5 GPa. The contact between the conductive particles and the conductive layer on the upper surface of the insulating substrate or the metal lid becomes a point contact, and as a result, the insulating substrate having a different thermal expansion coefficient due to heat generated when the semiconductor element operates. The large stress generated between the metal and the metal lid causes the conductive particles to separate from the point of contact between the conductive layer on the upper surface of the insulating substrate and the metal lid, resulting in a decrease in conductivity. I was

When the insulating base and the metal lid are joined with a resin such as a thermosetting resin, the thickness of the resin is set to 5 μm or more in order to complete the hermetic sealing completely and to ensure reliability. Preferably, when the thickness of the resin is 5 μm or more, since the average particle diameter of the conductive particles is 0.01 to 5 μm, the conductive particles in direct contact with both the conductive layer and the metal lid on the upper surface of the insulating substrate There has been a problem that the number of conductive particles in direct contact with the resin decreases extremely as the number of conductive particles decreases and the thickness of the resin increases, and the conductivity decreases.

The present invention has been devised in view of the above-mentioned problems of the prior art, and its object is to effectively prevent radiation of electromagnetic waves to the outside and penetration of electromagnetic waves from the outside,
Another object of the present invention is to provide a semiconductor device with high hermetic reliability.

[0012]

According to the present invention, there is provided a semiconductor device comprising:
An insulating base having a mounting portion of the semiconductor element on the upper surface and a ground conductor adhered to the side surface, a semiconductor element mounted on the mounting portion, and an insulating substrate formed on the upper surface of the insulating substrate so as to surround the mounting portion; A semiconductor device comprising: a conductive layer electrically connected to a ground conductor; and a conductive lid joined to a top surface of an insulating base with a conductive layer interposed therebetween through a conductive sealing material. The thermosetting resin is mainly composed of a thermosetting resin and has an average particle size of 5 to 30 μm and a compressive strength of 1 to 50 MP.
a) Conductive particles formed by coating a metal layer on the surface of the particles made of the organic resin material of a).

According to the semiconductor device of the present invention, since the insulating base and the conductive lid are sealed with the conductive sealing material containing a thermosetting resin as a main component, the semiconductor element can be operated when the semiconductor element is operated. Even if a large stress is generated between the insulating base having a different coefficient of thermal expansion and the conductive lid due to the heat generated, the conductive sealing material having a low elastic modulus mainly composed of a thermosetting resin can reduce the stress. It is possible to relax and effectively prevent cracks from entering the insulating base.

Further, according to the semiconductor device of the present invention, since the compressive strength of the particles made of the organic resin material constituting the conductive particles contained in the conductive encapsulant is as low as 1 to 50 MPa, the conductive property is low. When the conductive sealing material is applied to the joint between the conductor layer of the insulating substrate and the conductive lid, and the two joints are overlapped and heated and cured while pressing, the conductive particles are greatly deformed and the conductive particles and the insulating substrate are deformed. The contact between the conductive layer on the upper surface and the conductive lid is a surface contact, and good electrical connection is possible. As a result, the insulating base and the conductive lid having different thermal expansion coefficients due to heat generated when the semiconductor element operates. Even if a large stress is generated between the conductive particles and the body, the stress does not cause the contact between the conductive particles and the conductive layer or the conductive lid on the upper surface of the insulating substrate to be separated, and the conductivity is not reduced.

Further, according to the semiconductor device of the present invention, since the average particle diameter of the conductive particles is 5 to 30 μm, the thickness of the conductive sealing material for sealing the insulating base and the conductive lid is reduced. The thickness can be 5 μm or more, and the hermetic sealing can be made completely reliable.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a semiconductor device according to the present invention will be described in detail with reference to the drawings.

FIG. 1 is a sectional view showing an embodiment of a semiconductor device according to the present invention, wherein 1 is an insulating base, 2 is a semiconductor element, 3 is a conductive lid, 4 is a conductor layer, and 5 is a ground conductor. , 6 are conductive sealing materials.

The insulating substrate 1 is provided with a concave mounting portion 1a for mounting the semiconductor element 2 at a substantially central portion of the upper surface thereof, and the semiconductor element 2 is made of glass, resin,
It is bonded and fixed via an adhesive made of brazing material or the like.

The insulating substrate 1 is made of an electrically insulating material such as an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, and a silicon carbide sintered body. If it is made of an aluminum oxide sintered body, a suitable organic binder, a solvent, a plasticizer, and a dispersant are added to and mixed with raw material powders of aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, etc. The slurry is made into a sheet by using a sheet forming method such as a doctor blade method or a calender roll method, which is well known, to obtain a ceramic green sheet (ceramic green sheet). Thereafter, the ceramic green sheet is appropriately punched. Processing and stacking multiple pieces of this, about 16
It is manufactured by firing at a high temperature of 00 ° C.

A plurality of wiring conductor layers 7 are formed on the insulating base 1 from the bottom surface to the lower surface of the mounting portion 1a. Each of the semiconductor elements 2 is provided on the bottom surface of the mounting portion 1a of the wiring conductor layer 7. The electrodes are electrically connected via bonding wires 8, and an external electric circuit (not shown) is electrically connected to a portion led out to the lower surface of insulating base 1 via a connecting member such as solder. You.

The wiring conductor layer 7 functions as a conductive path when each electrode of the semiconductor element 2 is electrically connected to an external electric circuit, and is formed of a high melting point metal such as tungsten, molybdenum, and manganese. molybdenum,
Organic solvents and solvents suitable for refractory metal powders such as manganese,
A metal paste obtained by adding and mixing a plasticizer and the like is applied in advance to a ceramic green sheet serving as the insulating substrate 1 by applying a thick film method such as a conventionally known screen printing method.
By filling the hole and firing it simultaneously with the ceramic green sheet, the insulating substrate 1 is formed in a predetermined pattern from the bottom surface to the lower surface of the mounting portion 1a.

The surface of the wiring conductor layer 7 is coated with a metal such as nickel or gold having good conductivity, good corrosion resistance and good wettability with a brazing material to a thickness of 1 to 20 μm by plating. In addition, it is possible to effectively prevent the oxidative corrosion of the wiring conductor layer 7 and to strengthen the connection between the wiring conductor layer 7 and the bonding wires 8 and the soldering between the wiring conductor layer 7 and the wiring conductor of the external electric circuit. Can be. Therefore, in order to prevent the oxidative corrosion of the wiring conductor layer 7 and to strengthen the connection between the wiring conductor layer 7 and the bonding wires 8 and the soldering between the wiring conductor layer 7 and the wiring conductor of the external electric circuit,
It is preferable that nickel, gold, or the like is applied to the surface of the wiring conductor layer 7 by plating so as to have a thickness of 1 to 20 μm.

The mounting portion 1a is provided on the upper surface of the insulating base 1.
And a conductor layer 4 that is electrically connected to a ground conductor 5 formed on the side surface of the insulating base 1.

The conductor layer 4 and the ground conductor 5 function as a conductive path when electrically connecting the conductive lid 3 to an external ground conductor (not shown), and radiate electromagnetic waves from inside the package to the outside. And a function of preventing intrusion from the outside of the package into the inside, and is formed of a high melting point metal such as tungsten, molybdenum, and manganese.

The conductor layer 4 and the ground conductor 5 are made of tungsten,
A metal paste obtained by adding a suitable organic solvent, a solvent, a plasticizer, and the like to a high melting point metal powder such as molybdenum, manganese or the like is used as the insulating substrate 1 by employing a conventionally known thick film method such as a screen printing method. The ceramic green sheet is printed and applied in advance, and is fired at the same time as the ceramic green sheet, so that a predetermined pattern is formed on the upper surface and side surfaces of the insulating substrate 1.

The grounding conductor 5 is formed on the entire side surface of the insulating base 1 or in a slit shape. By changing the area and arrangement of the grounding conductor 5 in accordance with the frequency used, radiation and penetration of electromagnetic waves can be effectively prevented. Can be prevented. Also,
By leading the ground conductor 5 to the lower surface of the insulating base 1, radiation and intrusion of electromagnetic waves can be more effectively prevented.

The conductor layer 4 and the ground conductor 5 are plated with a metal having good conductivity, good corrosion resistance and good wettability with a brazing material, such as nickel or gold, on the surface thereof for the same reason as the wiring conductor layer 7. Is preferably applied to a thickness of 1 to 20 μm.

A conductive lid 3 is joined to the upper surface of the insulating base 1 via a conductive sealing material 6 with a conductive layer 4 interposed therebetween.

The conductive lid 3 functions to hermetically seal the semiconductor element 2 inside the package and has a function of preventing radiation of electromagnetic waves from inside the package to the outside and prevention of intrusion into the inside from the outside of the package. , Iron, aluminum,
Metal materials such as copper, tungsten, iron-nickel alloy, iron-cobalt alloy, iron-nickel-cobalt alloy, ceramic materials such as aluminum oxide sintered body and aluminum nitride sintered body, ABS resin, phenolic resin, etc. It is formed of a conductive material in which the surface of a resin material such as a polyester resin is covered with a metal film.

When the conductive lid 3 is made of a metal material,
Iron-nickel alloy / iron-cobalt alloy / iron-nickel-
By using an iron alloy such as a cobalt alloy, the coefficient of thermal expansion between the conductive lid 3 and the insulating base 1 can be approximated, and good joint reliability between the conductive lid 3 and the insulating base 1 can be improved. Obtainable.

The conductive lid 3 made of such a metal material
Is formed by forming an ingot (lump) of an iron-nickel alloy, an iron-cobalt alloy, an iron-nickel-cobalt alloy or the like into a predetermined shape by using a conventionally known punching method or the like.

The conductive lid 3 is made of an iron-nickel alloy.
When made of an iron alloy such as an iron-cobalt alloy or an iron-nickel-cobalt alloy, the surface of the conductive lid 3 may be coated with various metal platings such as nickel, gold, and solder to prevent corrosion. preferable.

The conductive lid 3 is made of a conductive material in which the surface of a ceramic material such as an aluminum oxide sintered body or an aluminum nitride sintered body is covered with a metal film, for example. A raw material powder such as aluminum oxide / aluminum nitride is mixed with a suitable organic solvent / solvent to prepare the raw material powder, and the raw material powder is formed into a predetermined shape by press molding. It is manufactured by firing at a temperature of ° C., and further applying various metal coatings such as nickel, gold and solder on the entire surface of the fired body by an electroless plating method.

Further, the conductive lid 3 is made of, for example, A
In the case of a conductive material in which the surface of a resin material such as a BS resin or a phenol resin is covered with a metal coating, a thin plate made of a resin material such as an ABS resin or a phenol resin is formed by a conventionally known punching method or the like. It is manufactured by forming it into a predetermined shape and then applying various metal films such as nickel, gold and solder by electroless plating over the entire surface. Alternatively, a metal foil made of nickel, gold, copper, or the like is previously adhered to the surface of a thin plate made of a resin material such as an ABS resin or a phenol resin, and thereafter, a predetermined method is adopted by using a conventionally known punching method or the like. May be manufactured.

The conductive sealing material 6 has a function of joining the insulating base 1 and the conductive lid 3 and a function of electrically connecting the conductive layer 4 on the upper surface of the insulating base 1 to the conductive lid 3. A conductive particle comprising a thermosetting resin as a main component, an average particle diameter of 5 to 30 μm, and a particle of an organic resin material having a compressive strength of 1 to 50 MPa. It contains.

According to the present invention, since the insulating base 1 and the conductive lid 3 are sealed with the conductive sealing material 6 containing a thermosetting resin as a main component, the semiconductor element 2 operates. Even if a large stress is generated between the insulating base 1 and the conductive lid 3 having different thermal expansion coefficients due to the heat generated at the time, the conductive sealing material having a low elastic modulus and mainly composed of a thermosetting resin. 6 can effectively prevent the insulating substrate 1 from cracking by cracking the stress.

As such a thermosetting resin, a thermosetting resin mainly composed of an epoxy resin having a dense three-dimensional network structure is preferable from the viewpoint of moisture resistance or bonding strength, and bisphenol A type epoxy resin and bisphenol A-modified epoxy resin, bisphenol F type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, special novolak type epoxy resin, phenol derivative epoxy resin, biphenol skeleton type epoxy resin, etc. It is formed by adding a curing agent such as phosphorus, hydrazine, imidazole adduct, amine adduct, cationic polymerization, or dicyandiamide.

It is to be noted that two or more epoxy resins may be mixed and used, and furthermore, silicone rubber, silicone resin, LDPE, HDPE, PMMA, cross-linked PMMA, polystyrene, cross-linked polystyrene, ethylene-acryl copolymer, polymethacrylic acid A filler composed of soft fine particles such as ethyl / butyl acrylate / urethane may be added.

Further, according to the present invention, since the compressive strength of the organic resin material constituting the conductive particles contained in the conductive sealing material 6 is as low as 1 to 50 MPa, the conductive sealing material 6 can be used. The stopper 6 is made of the conductive layer 4 on the upper surface of the insulating base 1 and the conductive lid 3.
The conductive particles are greatly deformed when applied to the joint portion of the substrate and heated and cured while the two joint portions are overlapped and pressurized, and the conductive particles contact with the conductive layer 4 or the conductive lid 3 on the upper surface of the insulating base 1. Becomes surface contact, and good electrical connection becomes possible.
As a result, even if a large stress is generated between the insulating base 1 and the conductive lid 3 having different thermal expansion coefficients due to the heat generated when the semiconductor element 2 operates, the conductive particles and the insulating base are caused by this stress. 1. Conductive layer 4 and conductive lid 3 on the upper surface
There is no possibility that the contact portion is separated and the conductivity is reduced.

Further, since the conductive sealing material 6 has a content of the conductive particles of 0.5 to 50% by weight, the wettability of the resin in the conductive sealing material 6 is deteriorated and The adhesion between the material 6 and the insulating base 1 or the conductive lid 3 does not deteriorate.

When the content of the conductive particles in the conductive sealing material 6 is less than 0.5% by weight, the conductivity tends to decrease, and when it exceeds 50% by weight, the wettability of the resin decreases. Tend to. Therefore, the content of conductive particles is 0.5
A range of 5050% by weight is preferred.

Examples of the particles of the organic resin material constituting the conductive particles include various organic resins such as acrylic resin, phenol resin, urethane resin, benzoguanamine resin, melamine resin, polydivinylbenzene, polystyrene resin and the like. Particles of a material are used.

The compressive strength of the particles of the organic resin material is 1MP.
If it is less than a, the elastic modulus of the particles of the organic resin material is too low, and the conductive particles are crushed by the load when heated and cured while applying pressure, and the conductive particles and the conductive layer 4 and the conductive lid 3 are crushed.
When the compressive strength exceeds 50 MPa, the modulus of elasticity is too high, and the conductive particles are subjected to a load when heated and cured while applying pressure. Is difficult to deform sufficiently, and the contact between the conductive particles and the conductive layer 4 and the conductive lid 3 becomes a point contact. As a result, heat generated when the semiconductor element 2 operates is generated. Due to the large stress generated between the insulating base 1 and the conductive lid 3 having different expansion coefficients, the point of contact between the conductive particles and the conductive layer 4 or the conductive lid 3 on the upper surface of the insulating base 1 is separated. The conductivity tends to decrease. Therefore, the compressive strength of the particles of the organic resin material is preferably in the range of 1 to 50 MPa.

The conductive particles include a metal layer comprising a nickel layer having a thickness of 10 to 500 nm as a base layer and a gold layer having a thickness of 10 to 100 nm on the surface of the particles of the organic resin material. It is formed by coating. The gold that forms the surface of the metal layer is chemically stable and has no action to effectively prevent the oxidative corrosion of the conductive particles, and the nickel that forms the base layer firmly attaches gold to the surface of the particles of the organic resin material. It acts to join.

When the thickness of the nickel layer is less than 10 nm,
There is a tendency that it is difficult to firmly bond the gold layer to the surface of the particles made of the organic resin material, and if it exceeds 500 nm, the nickel layer tends to peel off from the surface of the particles made of the organic resin material There is. Therefore, the thickness of the nickel layer is preferably in the range of 10 to 500 nm. Further, when the thickness of the gold layer is less than 10 nm, the resistance value of the conductive sealing material 6 tends to increase, and when the thickness exceeds 100 nm, the metal layer composed of the nickel layer and the gold layer becomes an organic resin. There is a tendency that the particles made of the material are easily separated from the surface. Therefore, the thickness of the gold layer is preferably in the range of 10 to 100 nm.

The conductive particles in which a metal layer is formed on the surface of the particles made of such an organic resin material have a nickel plating layer formed on the surface of an acrylic resin having an average particle diameter of 5 to 30 μm by electroless plating. It is deposited so as to have a film thickness of 10 to 500 nm, and then a gold plating layer is formed with a film thickness of 10 to 100 nm.
nm.

When the average particle diameter of the conductive particles is less than 5 μm, the thickness of the conductive sealing material 6 needs to be less than 5 μm in order to obtain good conductivity.
When the thickness is less than 5 μm, it tends to be difficult to complete the hermetic sealing between the insulating base 1 and the conductive lid 3. In this case, the conductive particles are greatly deformed, the metal coating is broken, and good conductivity tends not to be obtained. Therefore, the average particle size of the conductive particles is preferably in the range of 5 to 30 μm.

Further, the thickness of the conductive sealing material 6 is 5 to 25 μm.
m is preferable, and when the thickness of the conductive sealing material 6 is less than 5 μm, it tends to be difficult to complete the hermetic sealing between the insulating base 1 and the conductive lid 3.
If it exceeds 3, the moisture resistance of the conductive sealing material 6 tends to decrease. Therefore, the thickness of the conductive sealing material 6 is 5 to 25.
It is preferably in the range of μm.

Thus, according to the above-described semiconductor device, the semiconductor element 2 is bonded and fixed to the bottom surface of the mounting portion 1a of the insulating base 1 via an adhesive made of glass, resin, brazing material or the like, and each electrode of the semiconductor element 2 is connected. By connecting to the wiring conductor layer 7 by the bonding wire 8 and then connecting the insulating base 1 and the conductive lid 3 via the conductive sealing material 6 with the conductive layer 4 interposed therebetween, 1 and conductive lid 3
The semiconductor device 2 as a final product is completed by housing the semiconductor element 2 in an airtight manner in a container consisting of

It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made without departing from the scope of the present invention. For example, as shown in a sectional view in FIG. Alternatively, the ground conductor may be a through ground conductor 9 penetrating inside the insulating base 1 instead of the side surface of the insulating base 1.
Further, the electrical connection between each electrode of the semiconductor element 2 and the wiring conductor layer 7 may be connected by a conductive connection member such as a solder bump 10.

[0051]

According to the semiconductor device of the present invention, since the insulating base and the conductive lid are sealed with the conductive sealing material containing a thermosetting resin as a main component, the semiconductor element operates. Even if a large stress is generated between the insulating base having a different coefficient of thermal expansion and the conductive lid due to the heat generated at the time of the heat treatment, the conductive sealing material having a low elastic modulus containing a thermosetting resin as a main component can be used. Cracking can be effectively prevented by relaxing stress.

According to the semiconductor device of the present invention, the conductive particles contained in the conductive sealing material have a compressive strength of 1 to 50M.
Because of the low Pa, the conductive particles are greatly deformed when the conductive sealing material is applied to the joint between the conductor layer of the insulating base and the conductive lid, and the joints are superposed and heated and cured while pressing. The contact between the conductive particles and the conductive layer or the conductive lid on the upper surface of the insulating base is in surface contact, and good electrical connection is possible. As a result, the heat generated when the semiconductor element operates causes the thermal expansion coefficient to decrease. Even if a large stress is generated between different insulating bases and the conductive lid, the stress separates the conductive particles from the conductive layer on the upper surface of the insulating base or the conductive lid, thereby lowering the conductivity. There is no such thing as.

Further, according to the semiconductor device of the present invention, since the average particle diameter of the conductive particles is 5 to 30 μm, the thickness of the conductive sealing material for sealing the insulating base and the conductive lid is reduced. The thickness can be 5 μm or more, and the hermetic sealing can be made completely reliable.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a semiconductor device of the present invention.

FIG. 2 is a sectional view showing another embodiment of the semiconductor device of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating base 1a ... Mounting part 2 ... Semiconductor element 3 ... Conductive lid 4 ... Conductor Layer 5: ground conductor 6: conductive sealing material 7: wiring conductor layer

Claims (3)

[Claims] An insulating base having a mounting portion for a semiconductor element on an upper surface and a ground conductor adhered to a side surface; a semiconductor element mounted on the mounting portion; and the mounting portion on an upper surface of the insulating base. A conductive layer adhered and formed so as to surround and electrically connected to the ground conductor; and a conductive lid joined to the upper surface of the insulating base via a conductive sealing material with the conductive layer interposed therebetween. Wherein the conductive sealing material is mainly composed of a thermosetting resin, and has an average particle diameter of 5 to 30 μm and a compressive strength of 1 to 50 MPa. A semiconductor device comprising conductive particles formed by coating a metal layer on the surface of a semiconductor device. 2. The semiconductor device according to claim 1, wherein the content of the conductive particles in the conductive sealing material is 0.5 to 50% by weight. 3. The metal layer has a nickel layer having a thickness of 10 to 500 nm as an underlayer, and has a thickness of 10 to 1 nm on the nickel layer.
3. The semiconductor device according to claim 1, wherein the semiconductor device is formed by coating a gold layer having a thickness of 00 nm.