JP2001291855A - Solid-state image pickup element - Google Patents

Solid-state image pickup element

Info

Publication number
JP2001291855A
JP2001291855A JP2000144093A JP2000144093A JP2001291855A JP 2001291855 A JP2001291855 A JP 2001291855A JP 2000144093 A JP2000144093 A JP 2000144093A JP 2000144093 A JP2000144093 A JP 2000144093A JP 2001291855 A JP2001291855 A JP 2001291855A
Authority
JP
Japan
Prior art keywords
solid
image pickup
sensitivity
state image
pickup element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000144093A
Other languages
Japanese (ja)
Inventor
Takashi Miura
高志 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Miura Takashi
Original Assignee
Miura Takashi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Miura Takashi filed Critical Miura Takashi
Priority to JP2000144093A priority Critical patent/JP2001291855A/en
Publication of JP2001291855A publication Critical patent/JP2001291855A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To improve the sensitivity of a solid-state image pickup element to be used for a digital camera or the like. SOLUTION: The thin film of photo-catalyst such as titanium dioxide is formed, or polymer into which the micro-powder of the photo-catalyst such as the titanium dioxide is mixed is applied on the light receiving face of a CCD(charge coupled device) or a CMOS(complementary metallic oxide film semiconductor) sensor so that image pickup sensitivity can be improved.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、デジタルカメラ
等で使用する固体撮像素子の感度を向上する技術に関す
るものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for improving the sensitivity of a solid-state imaging device used in a digital camera or the like.

【0002】[0002]

【従来の技術】従来、デジタルカメラに使用されるCC
Dでは光量が少ない環境での撮像感度が十分でないた
め、電気的に信号を増幅して感度を向上していたが、雑
音も同時に増幅されるために、フィルタにより信号対雑
音比を向上させるなどのコスト増加を招いていた。ま
た、CMOSセンサを撮像素子として用いる場合には、
CCDに比べて感度が低く雑音の除去が非常に困難であ
った。
2. Description of the Related Art CCs conventionally used in digital cameras
In the case of D, the sensitivity was improved by electrically amplifying the signal because the imaging sensitivity in an environment with a small amount of light was not sufficient. Cost increase. When a CMOS sensor is used as an image sensor,
The sensitivity was lower than that of the CCD, and it was very difficult to remove noise.

【0003】[0003]

【発明が解決しようとする課題】このため撮影画素数が
増加する程、1画素あたりの受光面積が減少するため、
高感度で低雑音の固体撮像素子の製造が困難である。C
MOSセンサはCCDに比べて製造コストが低減できる
可能性があり、低価格で高感度な撮像素子の実現が求め
られている。本発明は、CCDやCMOSセンサの受光
面に光触媒の薄膜を配置することで、高感度で低雑音の
固体撮像素子を低価格で製造可能とするために発明され
たものである。
For this reason, as the number of photographing pixels increases, the light receiving area per pixel decreases.
It is difficult to manufacture a high-sensitivity, low-noise solid-state imaging device. C
There is a possibility that the manufacturing cost of the MOS sensor can be reduced as compared with the CCD, and realization of a low-cost and high-sensitivity imaging device is required. The present invention has been devised in order to make it possible to manufacture a high-sensitivity, low-noise solid-state imaging device at low cost by arranging a thin film of a photocatalyst on the light receiving surface of a CCD or CMOS sensor.

【0004】[0004]

【課題を解決するための手段】いまその解決手段を図面
に従いながら説明すれば、
Means for Solving the Problems Now, the solution will be described with reference to the drawings.

【0005】光触媒1が固体撮像素子2の受光面に配置
しており、撮影される光はまず光触媒に入射する。入射
した光は光触媒により励起されて、固体撮像素子の出力
信号が増加する。この時、雑音は変化しないので信号対
雑音比が改善される。
A photocatalyst 1 is arranged on a light receiving surface of a solid-state image sensor 2, and light to be photographed first enters the photocatalyst. The incident light is excited by the photocatalyst, and the output signal of the solid-state imaging device increases. At this time, since the noise does not change, the signal to noise ratio is improved.

【0006】[0006]

【発明の実施の形態】本発明において光触媒1は2酸化
チタンなどの光触媒の薄膜を固体撮像素子2の受光面に
直接形成する方法または2酸化チタンなどの光触媒物質
の微粉末を混入したポリマーを受光面に塗布することに
より配置することができる。
DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a photocatalyst 1 is formed by directly forming a thin film of a photocatalyst such as titanium dioxide on the light-receiving surface of a solid-state imaging device 2 or by using a polymer mixed with a fine powder of a photocatalytic substance such as titanium dioxide. It can be arranged by applying to the light receiving surface.

【発明の効果】固体撮像素子の面積を増加せずに、撮像
感度と信号対雑音比が向上し、高性能なデジタルカメラ
を低価格にて提供することが可能となる。
As described above, the imaging sensitivity and the signal-to-noise ratio are improved without increasing the area of the solid-state imaging device, and a high-performance digital camera can be provided at a low price.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の機能ブロック図FIG. 1 is a functional block diagram of the present invention.

【符号の説明】[Explanation of symbols]

1は光触媒 2は固体撮像素子 1 is a photocatalyst 2 is a solid-state image sensor

Claims (1)

【特許請求の範囲】[Claims] CCD(電荷結合素子)またはCMOS(相補性金属酸
化膜半導体)センサを利用する撮像素子において、その
受光面に2酸化チタン等の光触媒の薄膜を配置した固体
撮像素子。
An image sensor using a CCD (Charge Coupled Device) or CMOS (Complementary Metal Oxide Semiconductor) sensor, in which a thin film of a photocatalyst such as titanium dioxide is arranged on the light receiving surface.
JP2000144093A 2000-04-08 2000-04-08 Solid-state image pickup element Pending JP2001291855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000144093A JP2001291855A (en) 2000-04-08 2000-04-08 Solid-state image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000144093A JP2001291855A (en) 2000-04-08 2000-04-08 Solid-state image pickup element

Publications (1)

Publication Number Publication Date
JP2001291855A true JP2001291855A (en) 2001-10-19

Family

ID=18650810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000144093A Pending JP2001291855A (en) 2000-04-08 2000-04-08 Solid-state image pickup element

Country Status (1)

Country Link
JP (1) JP2001291855A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8698998B2 (en) * 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US9645505B2 (en) 2004-06-09 2017-05-09 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9958786B2 (en) 2003-04-11 2018-05-01 Nikon Corporation Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer
US9645505B2 (en) 2004-06-09 2017-05-09 Nikon Corporation Immersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid
US8698998B2 (en) * 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
US8810767B2 (en) 2004-06-21 2014-08-19 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device

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A02 Decision of refusal

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Effective date: 20040224