JP2001291855A - Solid-state image pickup element - Google Patents
Solid-state image pickup elementInfo
- Publication number
- JP2001291855A JP2001291855A JP2000144093A JP2000144093A JP2001291855A JP 2001291855 A JP2001291855 A JP 2001291855A JP 2000144093 A JP2000144093 A JP 2000144093A JP 2000144093 A JP2000144093 A JP 2000144093A JP 2001291855 A JP2001291855 A JP 2001291855A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- image pickup
- sensitivity
- state image
- pickup element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、デジタルカメラ
等で使用する固体撮像素子の感度を向上する技術に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for improving the sensitivity of a solid-state imaging device used in a digital camera or the like.
【0002】[0002]
【従来の技術】従来、デジタルカメラに使用されるCC
Dでは光量が少ない環境での撮像感度が十分でないた
め、電気的に信号を増幅して感度を向上していたが、雑
音も同時に増幅されるために、フィルタにより信号対雑
音比を向上させるなどのコスト増加を招いていた。ま
た、CMOSセンサを撮像素子として用いる場合には、
CCDに比べて感度が低く雑音の除去が非常に困難であ
った。2. Description of the Related Art CCs conventionally used in digital cameras
In the case of D, the sensitivity was improved by electrically amplifying the signal because the imaging sensitivity in an environment with a small amount of light was not sufficient. Cost increase. When a CMOS sensor is used as an image sensor,
The sensitivity was lower than that of the CCD, and it was very difficult to remove noise.
【0003】[0003]
【発明が解決しようとする課題】このため撮影画素数が
増加する程、1画素あたりの受光面積が減少するため、
高感度で低雑音の固体撮像素子の製造が困難である。C
MOSセンサはCCDに比べて製造コストが低減できる
可能性があり、低価格で高感度な撮像素子の実現が求め
られている。本発明は、CCDやCMOSセンサの受光
面に光触媒の薄膜を配置することで、高感度で低雑音の
固体撮像素子を低価格で製造可能とするために発明され
たものである。For this reason, as the number of photographing pixels increases, the light receiving area per pixel decreases.
It is difficult to manufacture a high-sensitivity, low-noise solid-state imaging device. C
There is a possibility that the manufacturing cost of the MOS sensor can be reduced as compared with the CCD, and realization of a low-cost and high-sensitivity imaging device is required. The present invention has been devised in order to make it possible to manufacture a high-sensitivity, low-noise solid-state imaging device at low cost by arranging a thin film of a photocatalyst on the light receiving surface of a CCD or CMOS sensor.
【0004】[0004]
【課題を解決するための手段】いまその解決手段を図面
に従いながら説明すれば、Means for Solving the Problems Now, the solution will be described with reference to the drawings.
【0005】光触媒1が固体撮像素子2の受光面に配置
しており、撮影される光はまず光触媒に入射する。入射
した光は光触媒により励起されて、固体撮像素子の出力
信号が増加する。この時、雑音は変化しないので信号対
雑音比が改善される。A photocatalyst 1 is arranged on a light receiving surface of a solid-state image sensor 2, and light to be photographed first enters the photocatalyst. The incident light is excited by the photocatalyst, and the output signal of the solid-state imaging device increases. At this time, since the noise does not change, the signal to noise ratio is improved.
【0006】[0006]
【発明の実施の形態】本発明において光触媒1は2酸化
チタンなどの光触媒の薄膜を固体撮像素子2の受光面に
直接形成する方法または2酸化チタンなどの光触媒物質
の微粉末を混入したポリマーを受光面に塗布することに
より配置することができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS In the present invention, a photocatalyst 1 is formed by directly forming a thin film of a photocatalyst such as titanium dioxide on the light-receiving surface of a solid-state imaging device 2 or by using a polymer mixed with a fine powder of a photocatalytic substance such as titanium dioxide. It can be arranged by applying to the light receiving surface.
【発明の効果】固体撮像素子の面積を増加せずに、撮像
感度と信号対雑音比が向上し、高性能なデジタルカメラ
を低価格にて提供することが可能となる。As described above, the imaging sensitivity and the signal-to-noise ratio are improved without increasing the area of the solid-state imaging device, and a high-performance digital camera can be provided at a low price.
【図1】本発明の機能ブロック図FIG. 1 is a functional block diagram of the present invention.
1は光触媒 2は固体撮像素子 1 is a photocatalyst 2 is a solid-state image sensor
Claims (1)
化膜半導体)センサを利用する撮像素子において、その
受光面に2酸化チタン等の光触媒の薄膜を配置した固体
撮像素子。An image sensor using a CCD (Charge Coupled Device) or CMOS (Complementary Metal Oxide Semiconductor) sensor, in which a thin film of a photocatalyst such as titanium dioxide is arranged on the light receiving surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000144093A JP2001291855A (en) | 2000-04-08 | 2000-04-08 | Solid-state image pickup element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000144093A JP2001291855A (en) | 2000-04-08 | 2000-04-08 | Solid-state image pickup element |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2001291855A true JP2001291855A (en) | 2001-10-19 |
Family
ID=18650810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000144093A Pending JP2001291855A (en) | 2000-04-08 | 2000-04-08 | Solid-state image pickup element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2001291855A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8698998B2 (en) * | 2004-06-21 | 2014-04-15 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
US9645505B2 (en) | 2004-06-09 | 2017-05-09 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid |
US9958786B2 (en) | 2003-04-11 | 2018-05-01 | Nikon Corporation | Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer |
-
2000
- 2000-04-08 JP JP2000144093A patent/JP2001291855A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9958786B2 (en) | 2003-04-11 | 2018-05-01 | Nikon Corporation | Cleanup method for optics in immersion lithography using object on wafer holder in place of wafer |
US9645505B2 (en) | 2004-06-09 | 2017-05-09 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with measuring device to measure specific resistance of liquid |
US8698998B2 (en) * | 2004-06-21 | 2014-04-15 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
US8810767B2 (en) | 2004-06-21 | 2014-08-19 | Nikon Corporation | Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10218923B2 (en) | Methods and apparatus for pixel binning and readout | |
US9888199B2 (en) | Solid-state imaging device, imaging device, and signal reading method | |
KR102212100B1 (en) | Split-gate conditional-reset image sensor | |
WO2016199594A1 (en) | Solid-state imaging device and electronic device | |
US9088726B2 (en) | Solid-state image capturing device, method of driving solid-state image capturing device, and image capturing apparatus | |
US9030583B2 (en) | Imaging system with foveated imaging capabilites | |
TW200838296A (en) | Multi image storage on sensor | |
TWI587494B (en) | Image sensor pixel for high dynamic range image sensor | |
JPWO2017018258A1 (en) | Solid-state imaging device and electronic apparatus | |
CN113330734A (en) | BDI-based pixels for synchronous frame-based and asynchronous event-driven readers | |
EP1519416A3 (en) | Solid state image pickup device | |
JP6922889B2 (en) | Solid-state image sensor, drive method, and electronic equipment | |
TW200701447A (en) | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device | |
EP1557886A3 (en) | Solid-state imaging device and camera | |
CN112992949A (en) | Solid-state imaging device and electronic apparatus | |
JP2006278539A (en) | Mos solid state imaging device | |
US9749566B2 (en) | Imaging device and electronic device | |
JP6263914B2 (en) | Imaging device, driving method of imaging device, and camera | |
US20200169681A1 (en) | Ctia based pixel for simultaneous synchronous frame-based & asynchronous event-driven readouts | |
US7400355B2 (en) | Image pickup apparatus and photometer | |
JP2009004605A (en) | Image sensor and imaging device | |
JP2001291855A (en) | Solid-state image pickup element | |
JP2010272666A (en) | Solid-state imaging device | |
US20070153105A1 (en) | Method and device of high efficiency image capturing | |
JPH05235317A (en) | Solid-state image pickup element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20040224 |