JP2001273614A - Head of magnetic recording device, its manufacturing method and magnetic recording device using the head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a head without destruction due to electric short-circuit or the like, a method capable of manufacturing the head stably and in a high yield and a magnetic recording device high in reliability without fear of static destruction or the like of the head. SOLUTION: The head is formed by a thin film laminating method. A work assisting film 30 is disposed at an upper part of at least one film and the work assisting film 30 consists of a material which is not destructed when a film positioned at an upper part of the work assisting film is film-formed and is laminated in a region where the work assisting film is destructed when the film positioned at the upper part of the work assisting film in a film positioned at a lower part of the work assisting film is film-formed. Even if the film positioned at the upper part of the work assisting film is, for example, thick and long etching time and etching quantity are required, the work assisting film makes the film positioned at the lower part of the work assisting film not to be directly etched. That is, film-forming can be performed without destruction of a pre-formed film and the destruction of a film positioned at a lower part of the head is prevented to be able to obtain the head without electric short-circuit and static destruction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording apparatus head, a method of manufacturing the same, and a magnetic recording apparatus having the head.

[0002]

2. Description of the Related Art A magnetoresistive head utilizes a characteristic in which the resistance value of a semiconductor changes depending on the strength of a magnetic field. Therefore, a sufficient reproduction output can be obtained even at a low recording speed, which is advantageous for increasing the density and reducing the size of the magnetic recording apparatus. The head is usually formed by a thin film forming method using a magnetoresistive head as a read element and an inductive head as a write element.

In such a head, necessary films and tolerances are determined from electrical characteristics of films such as an upper gap film of a read element, a lower gap film of a magnetoresistive head, and a gap film of a write element. These films are formed by an ion milling method or a lift-off method, and the film thickness is determined by the film thickness at the time of film formation and is uniform in the plane. The maintenance of the film thickness is described in, for example, JP-A-62-1759.
As described in Japanese Patent Publication No. 22, an upper gap film of a read element, a lower gap film of a magnetoresistive head,
This is performed by laminating an etching prevention film only on the region where the recording / reproducing gap is formed in the gap film of the write element, and then selectively removing the etching prevention film.

[0004]

However, in the film forming method described in Japanese Patent Application Laid-Open No. Sho 62-175922, if the etching time of the upper film in the head is short, the lower film becomes the upper film. Is easily destroyed under the influence of the etching of the film. In particular, in a read / write separation type head in which a read element made of a magnetoresistive head is stacked below and a write element made of an inductive head is stacked above, the thickness of a film located below the write element is large, Since the etching time is long, the amount of etching is large, and the read element is usually thin with a thickness of 0.5 μm or less, the read element is formed when a film below the read element is formed. The film is lost by etching the underlying film in the write element, and the read element may be destroyed.

An object of the present invention is to prevent a film located under the head from being destroyed by the deposition of a film located above the head. That is, the films constituting the head are completely insulated and mounted on a magnetic recording apparatus. Sometimes, an electrical short circuit or electrostatic breakdown between constituent films or layers is prevented from occurring.

[0006]

In order to achieve the above object, the head of the magnetic recording apparatus of the present invention is formed by a thin film laminating method. At least one of the constituent films has a processing assisting film formed thereon. It is made of a material which is disposed and which is not destroyed when forming the film located above the processing aid film, and which is destroyed when forming the film located above the processing aid film in the film located below the processing aid film. Are stacked in the region to be formed.

In order to achieve the above object, the method for manufacturing a head of a magnetic recording apparatus according to the present invention employs a thin film laminating method. After the formation of the film to be formed, a region made of a material that is not destroyed by the film formation of the film located above the head in a region that is destroyed when the film located above the head is formed in the film located below the head. Forming an auxiliary film.

In order to achieve the above object, a magnetic recording apparatus according to the present invention has a magnetic storage medium in the form of a disk, a drive mechanism for rotating the magnetic storage medium, a magnetoresistive head, and a magnetic storage medium. A mechanism for determining the position of the magnetoresistive head in the above is provided, but the magnetoresistive head has a processing aid film deposited on top of at least one of the films constituting the head, and the processing aid film is assisted by the processing aid film. It is made of a material that is not destroyed when a film located above the film is formed, and is stacked in a region that is destroyed when forming a film located above the processing aid film in a film located below the processing aid film.

[0009]

In the head of the magnetic recording apparatus of the present invention, when forming a film located above the processing aid film, the processing aid film covers the film disposed below the processing aid film and is located above the processing aid film. In order to form the film located on the upper part of the processing aid film without destroying the film under the processing aid film formation, it protects the film arranged below the processing aid film formation from the action such as etching in the film formation. It is structurally stable and has excellent withstand voltage performance without fear of destruction or electrostatic destruction due to electrical short-circuiting between films or layers.

According to the method of manufacturing a head of a magnetic recording apparatus of the present invention, when forming a film located above the head,
The lower processing assist film covers the film disposed under the processing aid film formation and protects the film disposed below the processing aid film formation from an action such as etching in forming a film located above the processing aid film formation. The film located at the top of the head can be formed without destroying the film located at the top of the head. And a head with excellent pressure resistance performance can be obtained.

In the magnetic recording apparatus of the present invention, the reproduction output of the head is determined only by the wavelength of the magnetic signal without depending on the rotation speed of the disk as a magnetic recording medium, and sufficient reproduction output is obtained even at a low recording speed. Equipped with the obtained magneto-resistive head, high-density recording can be performed on the disk, and the disk can be reduced in diameter. Since there is no destruction due to an electric short-circuit or electrostatic destruction during operation or operation after mounting, high reliability can be obtained.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In a head of a magnetic recording apparatus according to the present invention, at least one film constituting the head is provided with a processing aid film formed thereon, and the processing aid film is formed at the time of forming a film positioned above the processing aid film. It is made of a material that is not destroyed, and is stacked in a region that is destroyed when forming a film located above the processing aid film formation in a film located below the processing aid film formation, and is used for forming a film located above the processing aid film formation. The processing auxiliary film covers the film disposed under the processing auxiliary film and covers the film disposed under the processing auxiliary film from an action such as etching in the film formation of the film located above the processing auxiliary film.
The film located above the processing aid film formation can be formed without destroying the film below the processing aid film formation.

It has a magnetoresistive head as a read element and an inductive head as a write element.
When the read element is formed below the head and the write element is formed above the read element for a combined read / write magnetic disk storage device, the processing auxiliary film is formed by the upper gap film and the lower gap of the read element. Is formed above the gap film of the write element. Since the processing auxiliary film made of an organic material is easy to obtain a material having high electric insulation, the film can be easily formed, and by baking, the film is not easily broken at the time of forming the film located at the upper portion, and thus is located at the lower portion. The film can be protected more reliably.
Specifically, for example, a photoresist or a photosensitive polyimide resin containing a novolak of a phenol resin as a main component and containing an alkali group which becomes alkali-soluble when exposed to light, but using Al ₂ O ₃ Can also. The film is formed by a photolithography technique. In the case of a photoresist or photosensitive polyimide resin containing a phenolic resin novolak as a main component and containing an alkali group which is alkali-soluble when exposed to light, the upper gap film, the lower gap, and the write element of a lead element Is applied to the gap film, exposed and developed using a photomask having a predetermined shape, and then baked. If of Al ₂ O ₃ is coated with a photoresist, by using a mask on which a predetermined shape can be obtained by exposing the photoresist film and after developing this, deposited Al ₂ O _3, a photoresist film This is done by removing the portion of the pattern and leaving Al ₂ O ₃ only where needed. It is desirable that the thickness be 0.1 μm to 3.0 μm. This is because when the thickness is 0.1 μm or less, voids are generated in the formed film, and it is not possible to prevent the destruction of the film located at the lower part. This is because a defect occurs in the film.

FIGS. 1 and 2 show an example of a head for a magnetic disk storage device according to the present invention. This head has a magneto-resistive head as a read element and an inductive head as a write element. A read / write separation combined type in which the read element is formed at the lower part of the head and the write element is formed at the upper part of the read element. Consists of a head. The read elements are a lower shield film 12, a lower gap film 13, a magnetoresistive film 14, a magnetic domain control film 1
5, an electrode conductor film 16, an upper gap film 17, and an upper shield film 18. The write element includes a gap film 21, a coil 22, an interlayer insulating film 23, and an upper magnetic film 2.
4. Terminal 2 for connecting protective film 25 and lead wire
It consists of six. The manufacture of the head is performed by a multilayer film forming method.

In forming the read element, a base insulating film 11 is formed on a surface of a substrate 10 made of ceramics such as Al ₂ O ₃ —TiC, and has a thickness of 3 μm on the surface of the base insulating film 11 and is made of a NiFe alloy. A lower gap film 13 having a thickness of 0.18 μm and made of Al ₂ O ₃ is formed on the surface of the lower shield film 12 by a non-bias sputtering method. A magnetoresistive film 1 having a thickness of 30 nm and made of a NiFe alloy on the surface of the film 13;
A magnetic domain control film 15 having a thickness of 4 and 50 nm and made of NiO is simultaneously formed by non-bias sputtering, and a surface of the lower gap film 13 and the magnetoresistive film 14 having a thickness of 0.15 μm and Nb and Au are formed. Electrode conductive film 1 composed of two layers of Nb and W or two layers of Nb and W
6 is formed on the lower gap film 13 and the electrode conductor film 16 with a thickness of 0.15 μm and Al ₂
The upper gap film 17 made of O ₃ is formed by a non-bias sputtering method, and an upper shield film 18 having a thickness of 3 μm and made of a NiFe alloy is formed on the surface of the upper gap film 17.

The write element is formed by the upper gap film 17.
And have and forming a gap layer 21 made of Al ₂ O ₃ to 0.7μm thickness on the surface of the upper shield film 18, a lift-off method Al ₂ O ₃ of the back gap portion and the terminal portion of the gap film 21 after film formation Then, a film is formed on the surface of the gap film 21 for reducing the step of the base in the interlayer insulating film 23 and preventing the coil from being cut off by using a photoresist. A coil 22 having a thickness of 4 μm is formed, and a film between the coil 22 and the upper magnetic film 24 in the interlayer insulating film 23 is formed by photoresist,
Unnecessary portions such as a back gap in the interlayer insulating film 23 are removed by exposure and development, and an upper magnetic film 24 having a thickness of 3 μm and made of NiFe is formed on the surface of the interlayer insulating film 23 to have a thickness of 60 μm. Al ₂ O ₃
Is formed by laminating a protective film 25 made of, and forming the terminals 26 by plating. The thickness of the interlayer insulating film is 15 μm.

The processing auxiliary film is indicated by reference numeral 30 and is laminated on the surface of the lower gap film 13 and the electrode conductor film 16 in the read element, except for the region serving as the recording / reproducing gap. After the electrode conductor film 16 is formed, a photoresist containing a novolak of phenolic resin as a main component and containing an alkali group which is alkali-soluble when exposed to light is applied to the electrode conductor film 1.
6 and the surface of the lower gap film 13 are applied to a thickness of 2.0 μm, the photoresist film is exposed using a predetermined mask, the photoresist film is developed, and the photoresist film is evacuated to 200 to 400 ° C. in vacuum. Formed by baking at a temperature of

When forming the upper shield film 18, the upper magnetic film 24, or the coil 22, the processing auxiliary film 30 forms the electrode conductor film 16 and the lower gap film 13 located below the processing auxiliary film 30. For example, the influence of the film formation of the upper shield film 18, the upper magnetic film 24 and the coil 22 is not affected. That is, the upper shield film 1
8 is formed into a predetermined shape by an ion milling method. After the film is formed on the entire surface of the substrate, an unnecessary portion, that is, a portion having no photoresist pattern is removed by a beam such as argon ion. Even if the upper shield film 18 is over-etched, since the processing auxiliary film 30 covers the lower gap film 13 and the electrode conductor film 16, the ion beam does not reach the lower gap film 13 and the electrode conductor layer 16, The gap film 13 and the electrode conductor layer 16 are not broken. Further, in forming the upper magnetic film 24 and the coil 22, when the upper magnetic film 24 formed by sputtering and the coil 22 formed by plating are formed into a predetermined shape by ion milling, the upper magnetic film 24 and the coil 22 are formed. Coil 2
Even if overetching occurs, the processing aid film 30 covers the lower gap film 13 and the electrode conductor film 16 because the processing aid film 30 covers the lower gap film 13 and the electrode conductor film 16 from the ion beam. The electrode conductor layer 16 is not destroyed. For this reason, it is possible to obtain a head which is structurally stable without destruction of the read element and has excellent withstand voltage performance. When a withstand voltage test of the read element is performed on the obtained head, the dielectric breakdown voltage is 60 V to 80 V or more between all constituent films in the read element.

Further, a processing auxiliary film 30 made of a photosensitive polyimide resin is formed on the electrode conductor film 16 and the lower gap film 1.
A head formed in the area other than the area where the recording / reproducing gap is formed on the surface of No. 3 and having the same structure as the other head was fabricated and subjected to a withstand voltage test of the read element. 70V between
-90V or more. The formation of the processing auxiliary film 30 is as follows.
After forming the electrode conductor film 16, photosensitive polyimide is applied to the surfaces of the electrode conductor film 16 and the lower gap film 13.
It is applied with a thickness of 0 μm, and the photosensitive polyimide layer is exposed and developed using a photomask having a predetermined shape, and then the photosensitive polyimide layer is heated at a temperature of about 350 ° C. This is done by baking in a vacuum. The formation of other films on the head is the same as that of the above-described head.

Further, a processing auxiliary film 30 made of Al ₂ O _{3 is formed.}
Is formed in a region other than a region serving as a recording / reproducing gap on the surfaces of the electrode conductor film 16 and the lower gap film 13, and a head having the same structure as the other is made, and a withstand voltage test of the magnetoresistive head is performed. As a result, the breakdown voltage is 70 V to 90 V or more between all the constituent films of the read element. Processing assistant film 30
Is formed by a lift-off method. After the electrode conductor film 16 is formed, a photoresist mainly composed of phenolic resin novolak is applied to the surface of the electrode conductor film 16 and the lower gap film 13 with a thickness of 1.5 μm. The photoresist film is exposed and developed using a mask capable of obtaining a predetermined shape.
This is performed by forming an Al ₂ O ₃ film having a thickness of m to 2.5 μm, removing a portion of the pattern of the photoresist film by a lift-off method, and leaving only the necessary portion of the Al ₂ O ₃ . The formation of other films on the head is the same as that of the above-described head.

For comparison, a head having the same structure except for the processing aid film formation was prepared without any such processing aid film formation, and 90% or more of the heads had the upper shield film of the read element and the write head. When the upper magnetic film of the element or the coil of the write element is formed, the electrode conductor film is disconnected and cannot be used as a head. When a withstand voltage test was performed on the remaining head without disconnection, the dielectric breakdown voltage was 5 V to 10 V, which was about 1/10 compared to the head according to the present invention. It is said that a magnetic disk storage device requires a withstand voltage of, for example, 30 V or more as a head. Therefore, even if the magnetic disk storage device is mounted on a magnetic disk storage device, electrostatic breakdown occurs.

FIG. 3 shows another embodiment of the head of the present invention. This head also comprises a combined read / write separation type head in which a read element composed of a magnetoresistive head is formed below the head and a write element composed of an inductive head is formed above the head. The read element is a lower shield film 12, a lower gap film 13, a magnetoresistive film 1
4, a magnetic domain control film 15, an electrode conductor film 16, an upper gap film 17, and an upper shield film 18; a write element is formed above a read element with an isolation film 20 interposed therebetween; 21, a coil 22, an interlayer insulating film 23, an upper magnetic film 24, a protective film 25, and terminals 26 for connecting lead wires.

The processing auxiliary film 130 is formed on the surface of the lower gap film 13 in the read element. The processing-assisted film itself is made of a photoresist mainly composed of novolac of phenol resin.
Is the same as the head described in relation to. Processing assistant film 2
Once formed, the magnetoresistive film 14, the magnetic domain control film 15, the electrode conductor film 16, the upper gap film 17, and the like are formed by the same method as that of the head described with reference to FIGS.
An upper shield film 18 and a separation film 20 are formed, and then a gap film 21, a coil 22, an interlayer insulating film 23, an upper magnetic film 24, a protection film 25, and a terminal 26 forming a write element are formed. However, when the electrode conductor film 16, the upper shield film 18, and the magnetoresistive film 14 are formed, the lower gap film 13 and the magnetic domain control film 15 are not broken. That is, the electrode conductor film 16 is formed on the lower gap film 1.
3 and the surface of the magnetoresistive film 14 are formed into a predetermined shape by ion milling using a photoresist as a mask. Since the processing auxiliary film 30 covers the lower gap film 13, the ion beam does not reach the lower gap film 13 and does not destroy the lower gap film 13. Also, when the upper shield film 18 is etched by the ion milling method, since the processing auxiliary film 330 covers the lower gap film 13 and the electrode conductor film 16, the lower gap film 13 and the electrode conductor film 16 are over-etched. In addition, the lower gap film 13 and the electrode conductor film 16 are not over-etched when the magnetoresistive film 14 is formed. For this reason, it is possible to obtain a head which is structurally stable without destruction of the read element and has excellent withstand voltage performance. When a withstand voltage test is performed on the read element in the obtained head, the dielectric breakdown voltage is 60 V to 80 V or more between all constituent films of the read element.

FIG. 4 shows still another embodiment of the head of the present invention. This head also has a combined read / write separation type head in which a read element composed of a magnetoresistive head is formed below the head, and a write element composed of an inductive head is formed above the head. The read element comprises a lower shield film 12, a lower gap film 13, a magnetoresistive film 14, a magnetic domain control film 15, an electrode conductor film 16, an upper gap film 17 and an upper shield film 18, and the write element comprises an isolation film 20. The write element itself, which is formed above the read element, includes a gap film 21, a coil 22, an interlayer insulating film 23, an upper magnetic film 24, a protective film 25, and terminals 26 for connecting lead wires. But,
The processing auxiliary film 230 is a gap film 21 in the light element.
It is laminated on the surface. The processing aid film itself is made of a photoresist mainly composed of phenolic resin novolak.

The method of forming the processing auxiliary film 230 is the same as that of the head described with reference to FIGS. 1 and 2, and after the processing auxiliary film 230 is formed, the method described with reference to FIGS. According to the same method as the head, the electrode conductor film 16,
Upper gap film 17, upper shield film 18, separation film 20
Is formed, and then a gap film 21, a coil 22, an interlayer insulating film 23, an upper magnetic film 24,
The protection film 25 and the terminal 26 are formed. However, when the upper magnetic film 24 and the coil 22 are etched by the ion milling method, since the processing auxiliary film 230 covers the upper portions of the lower gap film 13 and the electrode conductor film 16, the gap film 21 and the upper shield film 18 are formed. In addition, the upper gap film 17 and the electrode conductor film 16 are not over-etched by the ion beam, so that the read element and the write element are structurally stable, and a head with excellent withstand voltage performance can be obtained. When a withstand voltage test is performed on the read element in the obtained head, the dielectric breakdown voltage is 250 V or more between all constituent films of the read element and the write element.

FIG. 5 shows still another embodiment of the head of the present invention. This head also comprises a read / write separation combined type head in which a read element composed of a magnetoresistive head is formed below the head, and a write element composed of an inductive head is formed above the head. The read element is composed of the lower shield film 12, the lower gap film 13, the magnetoresistive film 14, the magnetic domain control film 15, the electrode conductor film 16, the upper gap film 17 and the upper shield film 18, and the write element is composed of the gap film 21, the coil 22, Interlayer insulating film 23,
It comprises an upper magnetic film 24, a protective film 25 and terminals 26 for connecting lead wires.

However, in this head, the processing aid film 330 is formed on the surface of the upper gap film 17 in the read element, and the processing aid film itself is made of Al ₂ O ₃ . After forming the upper gap film 17, a photoresist mainly composed of phenolic novolak is applied to the surface of the upper gap film 17,
This photoresist film is exposed using a mask having a predetermined shape, and after developing the exposed photoresist film, Al ₂ O ₃ is formed, and the pattern portion of the photoresist film is removed by lift-off. This is done by leaving Al ₂ O ₃ only where necessary.

The method of forming the processing auxiliary film 330 is the same as that of the head described with reference to FIGS. 1 and 2, and after the processing auxiliary film 230 is formed, the method described with reference to FIGS. Using the same method as for the head, the upper shield film 1
8. A separation film 20 is formed, and then a gap film 21, a coil 22, an interlayer insulating film 23, an upper magnetic film 24, a protective film 25, and a terminal 26 forming a write element are formed. However, when the upper shield film 18, the upper magnetic film 24, and the coil 22 are etched by the ion milling method, since the processing auxiliary film 330 covers the upper gap film 17, the upper gap film 17 is over-etched by the ion beam. Instead, the read element is structurally stable without destruction, and a head with excellent withstand voltage performance can be obtained. When a withstand voltage test is performed on the read element of the obtained head, the dielectric breakdown voltage is 65 V to 90 V or more between all the constituent films of the read element.

FIG. 6 shows an example of a magnetic recording apparatus incorporating a head according to the present invention. This magnetic recording device is a magnetic disk storage device, which has a magnetic storage medium in the form of a disk, a drive mechanism for rotating the magnetic storage medium, a head having a magnetoresistive head, and a head position on the magnetic storage medium. Deciding mechanism.

Spindle 41 and spindle motor 4
Reference numeral 2 denotes a drive mechanism for the magnetic recording medium. The spindle 41 is held by a bearing provided on a base 43, and the spindle motor 42 is fixed to the base 43, and is connected to the spindle 41 by a belt and a belt wheel.
The spindle 41 can be rotated.

A disk 44 as a magnetic storage medium is fitted on the spindle 41 via a spacer, and is fixed to the spindle 41 by a clamp.
It can rotate together with the spindle 41.

The head 45 is composed of a combined recording / reproduction / separation type head in which a magnetoresistive head as a read element and an inductive head as a write element are integrated. A constituent film is disposed on the upper part of the processing aid film, and the processing aid film is made of a material that is not destroyed when forming the film located on the upper part of the processing aid film. Are stacked in a region that is destroyed when the film located at the position is formed. For example, in the read element, similarly to the head described with reference to FIGS. 1 and 2, the processing aid film is formed by leaving a region where a recording / reproducing gap is formed in the surface of the electrode conductor film in the read element and the lower gap film. Are laminated on the surface of the film. The head 45 is connected to a read / write circuit 51 for controlling a signal current flowing through the head by a lead wire drawn from a read element and a write element, and an interface circuit 53 for exchanging signals with a disk controller 52 is provided. And is electrically connected to the disk controller 52.

The head 45 is attached to a load arm via a support spring. In this head assembly, the load arm is fixed to the carriage 46.
The carriage 46 constitutes a part of a head positioning mechanism. Rollers on the carriage 46 are mounted on rails laid on the base 43, and by moving the carriage 46, the head 45 is linearly moved in the radial direction of the disk 44. It is made to be able to be made. Movement is base 4
3 is performed by a voice coil motor 47 installed in the voice coil motor 3. The drive circuit 54 of the voice coil motor 47 is electrically connected to the disk controller 52.
The head 45 is positioned by the spindle motor 42 rotating the disk 44, the voice coil motor 47 moving the carriage 46 and the head assembly linearly, and the drive circuit 45 controlling the voice coil motor 47 according to a signal sent from the disk controller 52.
This is done by controlling the operation of

A signal is written to the disk 44 and a signal is read from the disk 44 when the disk controller 52 rotates the spindle motor 42 and the voice coil motor 47
Is controlled by controlling the read / write circuit 51 by controlling the operation of the head 45 on the disk. At this time, the head 45 constituting the head assembly uses the magnetoresistive head as a read element as described above, and the reproduction output from this read element does not depend on the rotation speed of the disk 44, It is determined only by the wavelength, and a sufficient reproduction output can be obtained even when the recording speed for the disk 44 is low. Therefore, high-density recording is performed on the disk 44, the diameter of the disk 44 is reduced, and the size of the entire apparatus can be reduced.
In addition, the head 45 may include a film in which at least one film constituting the read element has a processing aid film formed thereon, and the processing aid film is located above the processing aid film and a film located below the processing aid film. This type of head is equipped with a conventional head of this type in order to completely insulate the head and prevent accidents such as destruction of the read element due to an electrical short circuit or electrostatic destruction of the read element during operation of the magnetic disk storage device. It is possible to achieve extremely high reliability as compared with a magnetic disk storage device that performs the above.

[0035]

As described above, according to the present invention,
Not only can it be manufactured with a stable and high yield, but also when mounted on a magnetic recording device, there is no destruction due to electrical short-circuiting of the constituent films or layers, and there is no concern about electrostatic destruction. Since a head having a magnetoresistive head that is stable in terms of quality can be obtained, it is possible to obtain a miniaturized magnetic recording apparatus having a large storage capacity and high reliability.

[Brief description of the drawings]

FIG. 1 is a sectional view of an embodiment of a head of a magnetic recording apparatus according to the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a sectional view of another embodiment of the head of the magnetic recording apparatus of the present invention.

FIG. 4 is a sectional view of still another embodiment of the head of the magnetic recording apparatus of the present invention.

FIG. 5 is a sectional view of still another embodiment of the head of the magnetic recording apparatus of the present invention.

FIG. 6 is a cross-sectional view illustrating an example of a magnetic recording apparatus having a head according to the present invention.

[Explanation of symbols]

12 ... lower shield film, 13 ... lower gap film, 14 ...
Magnetoresistive film, 15 magnetic domain control film, 16 electrode conductor film, 17 upper gap film, 18 upper shield film 1
8, 21: gap film, 22: coil, 23: interlayer insulating film, 24: upper magnetic film, 25: protective film, 26: terminal, 3
0, 130, 230, 330: processing auxiliary film, 44: magnetic storage medium, 41, 42: drive mechanism, 45: head, 4
6, 47: Positioning mechanism.

Claims (3)

[Claims] In a head of a magnetic recording apparatus formed by a thin film lamination method, at least one film constituting the head is provided with a processing auxiliary film on an upper portion, and the processing auxiliary film is located on the upper portion of the processing auxiliary film. And a film that is not destroyed when forming a film to be processed, and is stacked in a region that is destroyed when forming a film located above the processing-assisted film formation in a film located below the film-formed auxiliary film formation. Head of magnetic recording device. 2. A method for manufacturing a head of a magnetic recording apparatus by a thin film laminating method, comprising: forming a film located at a lower portion of a head which is destroyed by forming a film located at an upper portion of the head; Forming a processing auxiliary film made of a material that is not destroyed by the film formation of the film located on the head in a region that is destroyed during the film formation of the film located on the head in the film located on the head. A method for manufacturing a magnetic recording apparatus head. 3. A magnetic storage medium in the form of a disk,
In a magnetic disk recording apparatus including a drive mechanism for rotating a magnetic storage medium, a head having a magnetoresistive head, and a mechanism for determining the position of the head on the magnetic storage medium, the magnetoresistive head constitutes the same. A processing auxiliary film is laminated on at least one film, and the processing auxiliary film is made of a material that is not destroyed when forming the film located above the processing auxiliary film, and the processing auxiliary is formed on a film positioned below the processing auxiliary film. A magnetic recording device, wherein the magnetic recording device is stacked in a region that is destroyed when a film located above the film is formed.