JP2001238460A - Power converter - Google Patents

Power converter

Info

Publication number
JP2001238460A
JP2001238460A JP2000047667A JP2000047667A JP2001238460A JP 2001238460 A JP2001238460 A JP 2001238460A JP 2000047667 A JP2000047667 A JP 2000047667A JP 2000047667 A JP2000047667 A JP 2000047667A JP 2001238460 A JP2001238460 A JP 2001238460A
Authority
JP
Japan
Prior art keywords
switching element
element
press
module
connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000047667A
Other languages
Japanese (ja)
Inventor
Ryuji Iyotani
Shuji Kato
Shigeta Ueda
茂太 上田
隆二 伊予谷
修治 加藤
Original Assignee
Hitachi Ltd
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, 株式会社日立製作所 filed Critical Hitachi Ltd
Priority to JP2000047667A priority Critical patent/JP2001238460A/en
Publication of JP2001238460A publication Critical patent/JP2001238460A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/66Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal
    • H02M7/68Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters
    • H02M7/72Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/79Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/797Conversion of ac power input into dc power output; Conversion of dc power input into ac power output with possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/32Means for protecting converters other than automatic disconnection
    • H02M2001/325Means for protecting converters other than automatic disconnection with means for allowing continuous operation despite a fault, i.e. fault tolerant converters

Abstract

PROBLEM TO BE SOLVED: To provide a power converter comprising a means for enhancing reliability, when a module type switching element is connected in series. SOLUTION: In a power converter, comprising a plurality of self arc suppression type semiconductor switching elements which are connected serially depending on the voltage to be impeded, the self arc suppression type semiconductor switching element is a module type switching element, where a semiconductor chip 3 is mounted on an insulated substrate, and this module type switching element 3 is connected electrically in parallel with a compression type switching element 4, in which a semiconductor chip is held from both sides with package electrodes. When a fault is generated, the compression type switching element 4 connected in parallel with the defective switching element 3 is shorted, and the arm thereof returns to the on state. Thereafter, normal operation can be continued with only the other sound switching element 3 by bypassing the defective switching elements 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power converter using semiconductor switching elements connected in series, and more particularly to a means for improving reliability when using module type switching elements connected in series.

[0002]

2. Description of the Related Art In a high-voltage self-excited power converter, it is necessary to connect a self-extinguishing type semiconductor switching element in series in order to prevent a high voltage. In power converters that require high reliability, such as power applications, increase the number of serially connected switching elements and allow for voltage to allow operation to continue even if some switching elements fail. is there. If each of the switching elements is broken down, an electrically short circuit state is provided, so that the operation can be continued with only the remaining healthy switching elements. Therefore, in a high-voltage power converter requiring high reliability, a press-contact switching element that is short-circuited when a failure occurs has been used.

[0003]

However, in the press-contact type switching element, since the chip must be uniformly pressed, the buffer electrode of the package needs to be thick, and the thermal resistance from the chip to the surface of the package increases. There are drawbacks. If the thermal resistance of the package is large, the temperature rise due to the heat generated by the switching element increases, and the allowable loss decreases. To eliminate harmonics, it is preferable to increase the frequency of the switching element. However, an increase in switching element temperature due to an increase in switching loss becomes a bottleneck, and it becomes difficult to increase the switching frequency.

On the other hand, in the case of the module type switching element, the distance between the chip and the package surface can be shortened, and the thermal resistance is small. Thus, the so-called redundancy cannot be increased by securing an alternative road, and high reliability cannot be obtained.

[0005] It is an object of the present invention to provide a power conversion device provided with means for improving reliability when module type switching elements are connected in series.

[0006]

According to the present invention, there is provided a power converter having a plurality of self-extinguishing type semiconductor switching elements connected in series according to a voltage to be blocked. The arc-type semiconductor switching element is a module-type switching element in which a semiconductor chip is mounted on an insulating substrate, and is electrically connected in parallel with the module-type switching element, and is connected to a pressure-contact switching element in which the semiconductor chip is sandwiched between package electrodes from both sides. The proposed power converter is proposed.

The press-contact type switching element is, specifically, a semiconductor element having a pnp structure, a semiconductor element having a pnpn structure, a diode electrically connected in series in the opposite direction to each other, or a freewheel diode in a module-type switching element. These are diodes connected in the same direction.

In any of the power converters, the withstand voltage of the press contact type switching element can be made lower than the withstand voltage of the module type switching element.

According to the present invention, a pressure contact type switching element having the same withstand voltage as the module type switching element is connected in parallel with the module type switching element. As such a pressure-resistant switching element having a withstand voltage, a pnp element, a pnpn element, a diode element, and a diode element connected in series in opposite directions can be considered.

In a power converter that converts power from a DC voltage source into AC and supplies it to a load by an arm using a self-extinguishing type semiconductor switching element, for some reason,
It is assumed that a certain module type switching element has failed and is opened.

If the arm of the switching element is turned on when the switching element fails, the DC voltage and the voltage generated in the inductance of the load are connected in parallel to the failed switching element in the present invention. Since all the voltage is applied to the pressure-contact switching element and exceeds the allowable voltage, the pressure-switching element is short-circuited, and the arm returns to the ON state. Thereafter, the faulty switching element is bypassed, and normal operation can be continued with only the healthy switching element.

On the other hand, if the arm of the switching element is in an off state when a failure occurs in the switching element, the DC voltage is transmitted between the press-contact switching element connected in parallel to the failed switching element and another switching element connected in series. Is divided. When transitioning to the ON state, the switching elements excluding the failed switching element are ignited and have a low impedance.In this case, too, the DC voltage is applied to the press-contact switching element connected in parallel to the failed switching element. This press-contact switching element is short-circuited and returns to the on state. Thereafter, normal operation can be continued.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, an embodiment of a power converter according to the present invention will be described in detail with reference to FIGS.

[0014]

Embodiment 1 FIG. 1 is a system diagram schematically showing an overall configuration of a power converter to which the present invention is applied. In this power conversion device, arms 5 connected in series in two stages are connected in parallel for three phases, and are collectively connected to a DC voltage source 6. The load 71 of each phase is connected to the middle point of each arm connected in series in two stages. A drive signal generated by the PWM control or the PAM control is input to the IGBT 1 to turn on / off the entire arm 5 to generate an AC voltage, which is applied to the load 71.

FIG. 2 is a block diagram showing a main part of one phase in the first embodiment of the power converter according to the present invention extracted from the system configuration of FIG. Two arms 5 are connected in series with a DC power supply 6, and a midpoint between the two arms 5 is
An inductance load 7 is connected. In each arm 5, the IGBT 1 and the free wheel diode 2 are connected in parallel to form a modular switching element 3. The plurality of modular switching elements 3 are connected to respective drive circuits 8 and are connected in series with each other.

In the first embodiment, a pressure-contact type p-type switching element 3 is provided in parallel with the module-type switching element 3 as a main element.
The np element 4 is connected. The pressure contact type pnp element 4
It has forward and reverse withstand voltage characteristics equivalent to the forward withstand voltage of IGBT1. Note that the IGBT 1 and the freewheeling diode 2 are composed of an arbitrary number of chips.

FIG. 3 shows a module type switching element 3.
FIG. 2 is a diagram illustrating an internal circuit configuration. On the outer surface of the package 31, an emitter terminal 341, a collector terminal 342,
An emitter auxiliary terminal 3411 and a gate terminal 343 are provided. The emitter terminal 341 is electrically connected to the emitter of the IGBT and the anode of the free wheel diode 21. The emitter auxiliary terminal 3411 is connected to the emitter terminal 34.
1 and is electrically connected. The collector terminal 342 is
It is electrically connected to the collector of the IGBT. The gate terminal 343 is electrically connected to the gate of each IGBT chip 11. The emitter terminal 341 and the collector terminal 342 are used for passing a main current, and the gate terminal 343 is used.
And the emitter auxiliary terminal 3411 are used for connection to a gate circuit. The number of terminals and the number of connected IGBT chips and diode chips are arbitrary.

FIG. 4 is a sectional view showing an example of the internal structure of the module type switching element 3 of FIG. IGBT chip 1 on insulating substrate 32 via collector electrode 112
1 and an emitter electrode 111 is formed thereon. The emitter electrode 111 is connected to the wire bonding 3
5 is connected to the emitter pad 3415.
Similarly, the collector electrode 112 is connected to the wire bonding 3
5 is connected to the collector pad 3425.
The pad 3415 is connected to the emitter terminal 341 by a copper bar.
Is connected to The pad 3425 is connected to the collector terminal 342 by the copper bar 33.

The module type switching element of the present invention is not limited to the configuration shown in FIG. 3 or FIG. I
An electrode on a semiconductor chip through which a main current flows, such as an anode electrode and a cathode electrode, having a built-in GBT chip and a freewheeling diode chip, is electrically connected to a terminal on the package through wire bonding or soldering. When the IGBT chip or the freewheeling diode chip is electrically broken due to overvoltage, overcurrent, or the like, a metal wire between the device electrode and the package electrode is cut, and the device may be electrically opened. It can be adopted as the module type switching element of the present invention.

FIG. 5 is a diagram showing the top structure of the pressure contact type pnp element 4, and FIG. 6 is a sectional view showing the internal structure of the pressure contact type pnp element 4. As shown in FIG. A cathode terminal 441 is provided on the upper surface of the package 41, and an anode terminal 442 is provided on the lower surface.
Is installed. The cathode electrode 422 is formed on the upper surface of the pnp chip 401, and the anode electrode 4 is formed on the lower surface.
23 are formed. The cathode electrode 422, the pnp chip 401, and the anode electrode 423 are vertically sandwiched between molybdenum buffers 425.
25 is also sandwiched between the cathode terminal 441 and the anode terminal 442. When the cathode terminal 441 and the anode terminal 442 are pressed against each other, an electrical conduction state is maintained, and pn
Even if the p-chip 401 is electrically short-circuited due to an overvoltage or an overcurrent, the conduction between the electrode 422 and the terminal 441 and the conduction between the electrodes 423 and 442 are maintained.
That is, when the switching element fails, it is electrically short-circuited.

The pressure contact type pnp element 4 of the present invention is not limited to the structure shown in FIG. 5 or FIG. A pressure of, for example, 1 kg / cm 2 or more is applied between the package electrode and the electrode on the semiconductor chip, and the main electrodes on the semiconductor chip such as the anode and the cathode are placed on the package via a metal plate such as Mo or Cu. Any element that is electrically connected to the electrode and is electrically short-circuited even if the semiconductor chip is broken by an overcurrent or an overvoltage can be employed as the press-contact type pnp element of the present invention.

FIG. 7 is a plan view showing a mounting structure of only two stages of the series switching elements of FIG. 1, and FIG. 8 is a side view of the mounting structure of FIG. Each emitter terminal 341 of the module type switching element 3 and the pressing jig 8
The lower electrode 84 is electrically connected to the lower electrode 84 by a copper plate 81. Each collector terminal 342 and the upper electrode 83 of the pressing jig 80 are electrically connected. The upper electrode 83 and the press-contact type pnp element 4 sandwich the emitter terminal 441. The lower electrode 84 and the pressure contact type pnp element 4 sandwich the collector terminal 442. The upper electrode 84 is kept in a pressurized state by a copper plate 87 with a spring and a bolt 86. These structures are mounted on cooling fins 85. One series connected in this manner is connected to the copper plate 8.
7 connects to another series switching element. Therefore, even if the module 3 of the one series switching element group 900 fails and becomes open, if the crimping type pnp element 4 connected in parallel is short-circuited, current flows through the other series switching element group 901 and the like. You can do it.

In FIG. 2, the IGB in one arm 5
T5, for example, the IGBT 1 of the module 3 in the arm 5N or 5P is turned on and off at the same time. The paired arms 5 are not turned on at the same time. P
Drive signals generated by WM control or PAM control are
The signal is input to the GBT 1 to turn on / off the arm 5 and control the effective value of the voltage applied to the inductance load 7.

Here, the arm 5N and the arm 5P are alternately turned on and off, and attention is focused on when the drive signal to the arm 5P is off and the arm 5 is on. In the ON state, the current flows in a path of DC voltage source 6 → arm 5N → inductance load 7.

When the arm 5N is turned off, the arm 5N has a main circuit, that is, a DC voltage source 6 → an arm 5N.
The sum of the voltage generated in the wiring inductance 9 existing in the path of N → arm 5P → DC voltage source 6 and the voltage of DC voltage source 6 is applied. Therefore, the module 3 in the arm 5N
Must be set so that this voltage can be blocked. Even if some of the modules 3 fail, the number of series-connected units is given a margin so that the operation of the power converter can be continued. At least one extra module 3 connected in parallel with a press-contact type pnp element 4 in which the failure mode is short-circuited is connected to every switching element.

Since the press-contact type pnp element 4 exhibits a forward / reverse withstand voltage characteristic equivalent to the forward withstand voltage of the IGBT 1 in a normal state,
No current flows through the press-contact type pnp element 4.

For example, when the arm 5N is off,
It is assumed that the IGBT of the module 3F has failed and has been opened. The voltage of the DC voltage source 6 is
The voltage is divided by a press-contact type pnp element 4F connected in parallel to the other module 3 and another module 3 or a press-contact type pnp element 4. Next, when an ON signal is applied to each module 3 of the arm 5N, the module 3 excluding the failed module 3F
Is turned on and has a low impedance, so that the direct-current voltage is all applied to the press-contact type pnp element 4F. In this state, the press-contact type pnp element 4F is applied with an overvoltage, and breaks down due to failure. Therefore, the current can flow through the short-circuited press-contact type pnp element 4F, and the operation can be continued by the remaining healthy switching elements.

On the other hand, suppose that the IGBT of the module 3F breaks down and is opened while the arm 5N is on. Since the IGBT of module 3F failed and became open,
Although the current is temporarily interrupted, the voltage of the DC voltage source 6 is applied to the press-contact type pnp element 4F connected in parallel to the failed module 3F, so that the press-contact type pnp element 4F fails. Short circuit. Therefore, current can flow through the short-circuited pressure-contact type pnp element 4F, and the operation is immediately restarted.

[0029]

Second Embodiment FIG. 9 is a block diagram showing a main part of one phase in a second embodiment of the power converter according to the present invention extracted from the system configuration of FIG. FIG. 3 is a diagram illustrating a circuit configuration inside the modular switching element 3 of the second embodiment, and FIG. 4 is a cross-sectional view illustrating an example of an internal structure of the modular switching element 3 of FIG. FIG.
0 is a diagram showing the top structure of the pressure contact type pnpn element 41, and FIG. 11 is a cross-sectional view showing the internal structure of the pressure contact type pnpn element 41. FIG. 12 is a plan view showing a mounting structure of only two stages of the series switching elements of the second embodiment, and FIG. 13 is a side view of the mounting structure of FIG.

The second embodiment is an example in which the press-contact pnp element 4 in the first embodiment is replaced with a press-contact pnpn element 41. As the pressure-contact type pnpn element 41, various types of high-withstand-voltage elements such as thyristors and GTO elements are sold, so that they are easily available.

The operational effect of the second embodiment is the same as that of the first embodiment.
The effect is almost the same.

[0032]

Third Embodiment FIG. 14 is a block diagram showing a main part of one phase in a third embodiment of the power converter according to the present invention extracted from the system configuration of FIG. FIG. 3 is a diagram illustrating a circuit configuration inside the modular switching element 3, and FIG. 4 is a cross-sectional view illustrating an example of an internal structure of the modular switching element 3. FIG. 15 is a diagram showing the top structure of the press-contact diode element 42, and FIG. 16 is a cross-sectional view showing the internal structure of the press-contact diode element 42. FIG. 17 is a plan view showing a mounting structure of only two stages of serial switching elements of the third embodiment, and FIG. 18 is a side view of the mounting structure of FIG.

In the third embodiment, p of the first embodiment is used.
Instead of the np element 4 or the pnpn element 41 of the second embodiment,
An element in which two press-contact type diodes 42 are connected in series in opposite directions is employed.

The pressure-contact type diode 42 has a forward / reverse withstand voltage characteristic equivalent to the forward withstand voltage characteristic of the IGBT 1.
No current flows through the press-contact type diode 42.

For example, when the arm 5N is off,
It is assumed that the IGBT of the module 3F has failed and has been opened. The voltage of the DC voltage source 6 is
The voltage is divided by the press-contact diode 42AF connected in parallel with the other, ie, the diode 42 having the same orientation as the freewheel diode 2 and the other module 3 or the press-contact diode 42A. Next, when an ON signal is applied to each module 3 of the arm 5N, the modules 3 except for the failed module 3F are turned on and have a low impedance. Then, the insulation displacement diode 4
The voltage applied to the 2AF increases, and the press-contact type diode 42AF also fails and is short-circuited. Therefore, the current is
The current can flow through the short-circuited pressure contact type diode 42AF, and the operation can be continued by the remaining healthy switching elements.

On the other hand, suppose that the IGBT of the module 3F breaks down and is opened while the arm 5N is on. When the IGBT of the module 3F fails and opens, the current is temporarily interrupted, but the voltage of the DC voltage source 6 is applied to the press-contact type diode 42AF connected in parallel to the failed module 3F, The press-contact type diode 42AF also fails and is short-circuited. Therefore, current can flow through the short-circuited pressure-contact type diode 42AF, and the operation is immediately restarted by the remaining healthy switching elements.

[0037]

Fourth Embodiment FIG. 19 is a block diagram showing a main part of one phase in a fourth embodiment of the power converter according to the present invention extracted from the system configuration of FIG. FIG. 3 is a diagram illustrating a circuit configuration inside the modular switching element 3, and FIG. 4 is a cross-sectional view illustrating an example of an internal structure of the modular switching element 3. Press-contact type diode element 4
FIG. 16 is a cross-sectional view showing the internal structure of the press-contact diode element 42. FIG.
FIG. 21 is a plan view showing a mounting structure of only two stages in series among the series switching elements of Embodiment 4, and FIG. 21 is a side view of the mounting structure of FIG.

In the fourth embodiment, p of the first embodiment is used.
Instead of the np element 4 or the pnpn element 41 of the second embodiment,
The press-contact diode 42 is connected in the same direction as the freewheel diode 2.

The fourth embodiment is characterized in that the press-contact diode 42 is electrically connected in parallel with the freewheel diode 2, so that the current capacity has a margin. Also, there is an advantage that the number of press-contact type switching elements is smaller than that of the third embodiment.

The operation when the switching element fails and the effects of the embodiment are almost the same as those of the first to third embodiments.

[0041]

Embodiment 5 In Embodiments 1 to 4, the pressure-contact type p
The breakdown voltage of the np element 4, the press-contact type pnpn element 4, and the press-contact diode element 42 is set lower than that in consideration of the element margin of the module 3. In the off state,
When an overvoltage is to be applied to a certain module 3, a press-contact type pnp element 4, which is connected in parallel to the module 3,
The module 3 does not fail because the crimping type pnpn element 4, the crimping type diode element 42, etc. fail first and short-circuit. Further, in the off state, the press-contact type switching element is short-circuited, so that the operation can be continued without passing through the instantaneous operation interruption due to the switching element failure as in the first to fourth embodiments.

[0042]

According to the present invention, when a failure of a switching element occurs and its arm is in the ON state, the voltage is applied to all the press-contact switching elements connected in parallel to the failed switching element, and the allowable voltage is applied. Therefore, the press-contact switching element is short-circuited, and the arm returns to the ON state. Thereafter, the faulty switching element is bypassed, and normal operation can be continued with only the healthy switching element.

On the other hand, if the arm of the switching element fails and the arm is in the off state, at the time of the next transition to the on state, the press-contact switching element connected in parallel with the failed switching element is short-circuited. The arm returns to the on state. Thereafter, normal operation can be continued.

Therefore, even if one of the series-connected modular switching elements fails, the normal operation can be substantially continued, and the reliability of the power converter is improved.

[Brief description of the drawings]

FIG. 1 is a system diagram schematically showing an overall configuration of a power converter to which the present invention is applied.

FIG. 2 is a block diagram showing a main part of one phase in a first embodiment of the power converter according to the present invention extracted from the system configuration of FIG. 1;

FIG. 3 is a diagram showing a circuit configuration inside a module type switching element.

FIG. 4 is a cross-sectional view illustrating an example of an internal structure of the module-type switching element.

FIG. 5 is a diagram showing a top structure of a press contact type pnp element 4;

FIG. 6 is a cross-sectional view showing an internal structure of a pressure contact type pnp element.

FIG. 7 is a plan view showing a mounting structure of only two stages of serial switching elements in FIG. 1;

FIG. 8 is a side view of the mounting structure of FIG. 7;

FIG. 9 is a block diagram showing a main part of one phase in a second embodiment of the power converter according to the present invention extracted from the system configuration of FIG. 1;

FIG. 10 is a diagram showing a top structure of a pressure contact type pnpn element 41.

FIG. 11 is a cross-sectional view showing the internal structure of a pressure contact type pnpn element 41.

FIG. 12 shows two of the series switching elements of the second embodiment.
It is a top view which shows the mounting structure of only the serial part of a step.

13 is a side view of the mounting structure of FIG.

FIG. 14 is a block diagram showing a main part of one phase in a third embodiment of the power conversion device according to the present invention extracted from the system configuration of FIG. 1;

FIG. 15 is a diagram showing a top structure of the press-contact diode element 42;

FIG. 16 is a cross-sectional view showing the internal structure of the press-contact diode element 42.

FIG. 17 shows two of the series switching elements of the third embodiment.
It is a top view which shows the mounting structure of only the serial part of a step.

FIG. 18 is a side view of the mounting structure of FIG. 17;

FIG. 19 is a block diagram showing a main part of one phase in a fourth embodiment of the power converter according to the present invention extracted from the system configuration of FIG. 1;

FIG. 20 shows two of the series switching elements of the fourth embodiment.
It is a top view which shows the mounting structure of only the serial part of a step.

FIG. 21 is a side view of the mounting structure of FIG. 20;

DESCRIPTION OF SYMBOLS 1 IGBT 11 IGBT chip 111 Emitter electrode 112 Collector electrode 2 Reflux diode 21 Reflux diode chip 3 Module 3F Failure module 341 Emitter terminal 3411 Emitter auxiliary terminal 3415 Emitter pad 342 Collector terminal 3425 Collector pad 35 Wire bonding 4 Pressure contact Type pnp element 401 pnp chip 4F pressure type pnp element 41 pressure type pnpn element 41F pressure type pnpn element 411 pnpn chip 42 pressure type diode 42F pressure type diode 42A pressure type diode 42AF pressure type diode 421 Chip 422 Cathode electrode 423 Anode electrode 425 Molybdenum buffer 43 Package 441 Cathode terminal 442 Node terminal 5 Arm 5N N arm 5P P arm 6 DC voltage source 7 Inductance load 71 Transformer 80 Pressing jig 83 Upper electrode 84 Lower electrode 85 Cooling fin 86 Bolt 87 Spring-loaded upper plate 88 Lower plate 900 1 Series element group 901 Others Series element group 999 cross section

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H02M 7/12 H02M 7/12 H 7/5387 7/5387 Z (72) Inventor Ryuji Iyoya Hitachi, Ibaraki 7-1-1, Mika-cho, Ichi-cho F-term in Hitachi Research Laboratory, Hitachi Ltd. (Reference) 5H006 HA07 5H007 AA06 CA01 CB05 CC05 CC06 DA05 FA03 FA06 FA13 HA04 5H740 AA04 BA11 BA15 BA18 BB05 BB07 BB08 BC01 BC02 MM11 PP01 PP02

Claims (6)

[Claims]
1. A power conversion device having a plurality of self-extinguishing type semiconductor switching elements connected in series according to a voltage to be blocked, wherein said self-extinguishing type semiconductor switching element mounts a semiconductor chip on an insulating substrate. A module-type switching element, which is electrically parallel to the module-type switching element,
A power conversion device characterized by connecting a pressure contact type switching element in which a semiconductor chip is sandwiched between package electrodes from both sides.
2. The power converter according to claim 1, wherein the press-contact switching element is a semiconductor element having a pnp structure.
3. The power converter according to claim 1, wherein the press-contact switching element is a semiconductor element having a pnpn structure.
4. The power conversion device according to claim 1, wherein the press-contact switching elements are diodes connected in series electrically in opposite directions.
5. The power converter according to claim 1, wherein the press-contact switching element is a diode connected in the same direction as a freewheel diode in the module-type switching element. .
6. The power converter according to claim 1, wherein a withstand voltage of the press contact type switching element is lower than a withstand voltage of the module type switching element. .
JP2000047667A 2000-02-24 2000-02-24 Power converter Pending JP2001238460A (en)

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US7301755B2 (en) * 2003-12-17 2007-11-27 Siemens Vdo Automotive Corporation Architecture for power modules such as power inverters
WO2009075366A1 (en) * 2007-12-11 2009-06-18 Tokyo Institute Of Technology Soft-switching power converting apparatus
JP2010512135A (en) * 2006-12-08 2010-04-15 シーメンス アクチエンゲゼルシヤフトSiemens Aktiengesellschaft Semiconductor protective element for controlling DC side short circuit of voltage source inverter
JP2013027260A (en) * 2011-07-26 2013-02-04 Hitachi Ltd Power conversion apparatus
WO2013044961A1 (en) * 2011-09-29 2013-04-04 Siemens Aktiengesellschaft Short-circuit current discharge for a sub-module of a modular multi-stage converter (mmc)
JP2013169088A (en) * 2012-02-16 2013-08-29 Hitachi Ltd Power converter, dc substation, dc power transmission system and control method of power converter
KR101425400B1 (en) 2013-08-29 2014-08-13 한국전력공사 Power converter for high voltage direct current transmission
WO2014141436A1 (en) * 2013-03-14 2014-09-18 株式会社日立製作所 Power conversion system and control method for same
JP2015019569A (en) * 2013-07-12 2015-01-29 アーベーベー・テクノロジー・アーゲー High-output semiconductor module, module-type multi level converter system, and method for bypassing high-output semiconductor module

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301755B2 (en) * 2003-12-17 2007-11-27 Siemens Vdo Automotive Corporation Architecture for power modules such as power inverters
US8817440B2 (en) 2006-12-08 2014-08-26 Siemens Aktiengesellschaft Semiconductor protection elements for controlling short circuits at the DC end of voltage source converters
JP2010512135A (en) * 2006-12-08 2010-04-15 シーメンス アクチエンゲゼルシヤフトSiemens Aktiengesellschaft Semiconductor protective element for controlling DC side short circuit of voltage source inverter
WO2009075366A1 (en) * 2007-12-11 2009-06-18 Tokyo Institute Of Technology Soft-switching power converting apparatus
JPWO2009075366A1 (en) * 2007-12-11 2011-04-28 国立大学法人東京工業大学 Soft switching power converter
JP4534007B2 (en) * 2007-12-11 2010-09-01 国立大学法人東京工業大学 Soft switching power converter
JP2013027260A (en) * 2011-07-26 2013-02-04 Hitachi Ltd Power conversion apparatus
WO2013044961A1 (en) * 2011-09-29 2013-04-04 Siemens Aktiengesellschaft Short-circuit current discharge for a sub-module of a modular multi-stage converter (mmc)
JP2013169088A (en) * 2012-02-16 2013-08-29 Hitachi Ltd Power converter, dc substation, dc power transmission system and control method of power converter
JP5855790B2 (en) * 2013-03-14 2016-02-09 株式会社日立製作所 Power conversion system and control method thereof
WO2014141436A1 (en) * 2013-03-14 2014-09-18 株式会社日立製作所 Power conversion system and control method for same
TWI505625B (en) * 2013-03-14 2015-10-21 Hitachi Ltd Power conversion system and its control method
EP2824701B1 (en) * 2013-07-12 2020-05-06 ABB Power Grids Switzerland AG High-power semiconductor module
JP2015019569A (en) * 2013-07-12 2015-01-29 アーベーベー・テクノロジー・アーゲー High-output semiconductor module, module-type multi level converter system, and method for bypassing high-output semiconductor module
WO2015030359A1 (en) * 2013-08-29 2015-03-05 한국전력공사 High-voltage direct current converter
US9692311B2 (en) 2013-08-29 2017-06-27 Korea Electric Power Corporation High-voltage direct current converter including a 12-pulse diode recitifier connected in series with a voltage-source converter
KR101425400B1 (en) 2013-08-29 2014-08-13 한국전력공사 Power converter for high voltage direct current transmission

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