JP2001216614A - Magnetoresistive effect element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element dealing with the request of high sensitivity and micronized size by suppressing the expansion of effective core width. SOLUTION: The magnetoresistive effect element consists of one or more magnetic material layers 1 magnetized to one direction and a diffusion material layer 5 consisting of a non-magnetic material is provided on a part except an external signal reading part so as to come into contact with the part. The magnetic layer 1 directly under the diffusion material layer 5 is specified to be a diffusion layer 7 in which elements of the diffusion material layer 5 are diffused.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element, and more particularly to a hard disk drive (H
Reproduction head (read head) for magnetic recording devices such as DD)
The present invention relates to a magnetoresistive element characterized by a configuration for suppressing an increase in the effective core width in a magnetoresistive element having an overlaid structure used for the present invention.

[0002]

2. Description of the Related Art In recent years, as demands for miniaturization and large capacity of a hard disk device or the like as an external storage device of a computer have increased, read head elements have been required to have high sensitivity and fineness. From a viewpoint, 40 Gbit / in
In order to achieve a recording density of ch ² (≒ 6.2 Gbit / cm ² ), the width of a track recorded on a magnetic recording medium is expected to be 0.3 μm.

Here, a magnetoresistive element using a spin valve film constituting a conventional read head will be described with reference to FIG. FIG. 8 is a schematic cross-sectional view of a conventional magnetoresistive element. A lower portion made of a NiFe alloy or the like is interposed on an Al ₂ O ₃ —TiC substrate serving as a base of the slider via an Al ₂ O ₃ film. A magnetic shield layer (both not shown) is provided, and Al ₂ O
_The free layer 43, the intermediate layer 44, the pinned layer 45, and the lower read gap layer 41 and the Ta layer 42 such as ₃
After providing a spin valve film composed of an antiferromagnetic layer 46 and patterning the spin valve film into a predetermined shape, a hard bias layer 47 composed of a high coercivity film such as CoCrPt is provided on both ends of the spin valve film. / Ti /
A conductive film composed of a Ta multilayer film or the like is deposited to form a lead electrode 4.
8 is formed. Then, although illustration is omitted, again,
NiFe through an upper read gap layer such as Al ₂ O ₃
By providing the upper magnetic shield layer made of an alloy or the like, the basic configuration of the read head is completed.

[0004] The principle of reproduction in this read head is that when an external magnetic field is applied from a magnetic recording medium or the like, a ferromagnetic layer whose magnetization is not fixed, that is, a free layer is used.
Since the magnetization direction of the layer 43 is freely rotated in accordance with the external magnetic field, the ferromagnetic layer having a fixed magnetization, that is, a pinned (p
(Need) An angle difference is generated between the magnetization direction of the layer 45 and the magnetization direction.

Since the scattering depending on the spin of the conduction electrons changes depending on the angle difference and the electric resistance changes, the change in the electric resistance is determined by flowing a constant sense current from the lead electrode 47. The state of the external magnetic field, that is, the signal magnetic field from the magnetic recording medium is obtained by detecting the change in the voltage value, and the magnetoresistance change rate of the read head using this spin valve film is about 5%. Becomes

In order to read a signal from a track written on a magnetic recording medium with a fine width by using such a magnetoresistive element without being affected by an adjacent track, the core width of a read head is required. It is necessary to make w smaller than the track width recorded on the magnetic recording medium.

In order to increase the sensitivity of such a magnetoresistive element, Barkhausen noise occurs if the free layer 43 constituting the spin valve film does not form a single magnetic domain, and the reproduction output fluctuates greatly. Free layer 43
A hard bias layer 47 is provided to control the magnetic domain of the semiconductor device.

However, in this case, the magnetization of the region near the hard bias layer 47 on both sides of the spin valve film becomes
Since the magnetic layer is fixed by a huge magnetic field from the hard bias layer 47, both ends of the free layer 43 are 0.1 to 0.2.
About μm is a dead zone 49 where the response to the magnetic field from the magnetic recording medium becomes dull, and the effective core width is smaller by about 0.2 to 0.4 μm than the apparent core width.

For this reason, it is necessary to form the apparent core width 0.2 to 0.4 μm wider than the substantially required core width, and to read a track having a width of 0.3 μm. , A core width of about 0.8 μm is required.
However, the change in magnetoresistance in the dead zone 49 is small, and
Since the electrical resistance of the spin valve film is much higher than that of the lead terminal 48, making the actual core width larger than the required core width results in a significant decrease in the output of the magnetoresistive element.

At present, studies have been made on an overlay structure in order to avoid a decrease in sensitivity due to such a dead zone 49. A magnetoresistive element employing such an overlay structure is shown in FIG. I will explain. FIG. 9 is a schematic sectional view of a magneto-resistance effect element having an overlaid structure. The basic configuration is the same as that of the magneto-resistance effect element of FIG. In the case of the element, a structure in which the interval between the hard bias layers 47 is wider than the interval between the lead electrodes 48, that is, an overlaid structure is employed.

By adopting such an overlaid structure, the dead zone 49 can be used as the lead electrode 4 for detecting the reproduction output.
8, the current does not flow in the dead zone 49. As a result, the spin valve film sufficiently responds to the magnetic field of the magnetic recording medium and the output can be efficiently taken out, so that the sensitivity is improved.

[0012]

However, in the magnetoresistive element of the overlay structure, the magnetization direction of the free layer 43 of the spin valve film below the lead electrode is completely fixed by the magnetization of the hard bias layer 47. However, the magnetization direction is slightly changed by the external magnetic field, and as a result, the effective core width w, which is the signal reading width, becomes wider than the design core width. Track will be affected.

Accordingly, it is an object of the present invention to provide a magnetoresistive element which suppresses the expansion of the effective core width and responds to the demand for higher sensitivity and finer structure.

[0014]

FIG. 1 is an explanatory view of the principle configuration of the present invention. Referring to FIG. 1, means for solving the problems in the present invention will be described. FIG.
FIG. 1A is a schematic cross-sectional view of a magnetoresistive element in which an antiferromagnetic layer is on an upper side, and FIG. 1B is a magnetoresistive element in which an antiferromagnetic layer is on a lower side. It is a schematic sectional drawing of. 1 (a) and 1 (b) (1) The present invention relates to a magnetoresistive effect element comprising one or more magnetic material layers 1 magnetized in one direction, and a portion other than an external signal reading portion. And a diffusion material layer 5 made of a non-magnetic material is provided so as to be in contact with the diffusion material layer 5, and the diffusion layer 7 in which the elements of the diffusion material layer 5 are diffused is provided.

As described above, since the magnetic properties of the magnetic material are very sensitive to the composition, the element of the non-magnetic material such as Au is diffused into a portion other than the external signal reading portion, so that the magnetic property of the magnetic material layer 1 is increased. Characteristics can be degraded,
Thereby, the magnetic sensitivity in a region other than the design core width can be eliminated.

Further, according to the present invention, in the above (1), one or more magnetic material layers 1 may have an anisotropic magnetoresistance (AMR: AMR).
Nisotropic Magneto-Resisti
vity) film or an artificial lattice film. That is, by diffusing an element of a nonmagnetic material such as Au into a peripheral region other than the design core width in the AMR film or the artificial lattice film, the magnetic characteristics of the AMR film or the artificial lattice film can be deteriorated.

(2) Further, according to the present invention, in a magnetoresistance effect element, one or more magnetic material layers 3 magnetized in one direction are provided on both sides of an intermediate layer 2 made of a nonmagnetic material, An antiferromagnetic layer 4 is provided so as to be in contact with the magnetic material layer 3, and a portion other than the external signal reading portion is non-magnetic so as to be in contact with either the antiferromagnetic layer 4 in the portion or the magnetic material layer 1 on the other side. A diffusion material layer 5 made of a material is provided, and either the antiferromagnetic layer 4 in contact with the diffusion material layer 5 or the magnetic material layer 1 on the other side is connected to the diffusion material layer 5.
Are formed as diffusion layers 6 and 7 in which the above elements are diffused.

As described above, one of the magnetic material layer 3 on one side, that is, the antiferromagnetic layer 4 provided in contact with the pinned layer, and the magnetic material layer 1 on the other side, that is, the free layer By diffusing an element of a nonmagnetic material such as Au, the antiferromagnetic properties of the antiferromagnetic layer 4 can be eliminated or the magnetic properties of the free layer can be degraded. The width can be matched.

Further, the present invention is characterized in that, in the above (2), the intermediate layer 2 made of a non-magnetic material is made of a non-magnetic metal layer. That is, by applying the present invention to a spin valve element, it is possible to make the designed core width and the effective core width of the spin valve element coincide.

Further, the present invention is characterized in that, in the above (2), the intermediate layer 2 made of a nonmagnetic material comprises a nonmagnetic metal layer and an oxide insulating material layer in contact with the nonmagnetic metal layer. That is, by applying the present invention to an element (TMR element) having a ferromagnetic tunnel junction structure, the design core width and the effective core width of the TMR element can be matched.

(3) In the present invention, in the above (1) or (2), the diffusion material layer 5 is made of Pt, Pd, Au,
It is characterized by being made of one or more of Ag, Cu, Ir, Rh, Ni, Fe, Cr and Co.

As described above, Pt, Pd, Au, Ag, C
One of at least one of u, Ir, Rh, Ni, Fe, Cr, and Co is preferable. In particular, when the magnetic material layer 1 is made of Ni, Fe, and Co, the elements that degrade the magnetic properties include Au, Ag, Cu, Ni, and Ni.
One or more of Fe and Co are suitable, and the antiferromagnetic layer 4 is made of Pt, Pd, A
When one or more of u, Ag, Cu, Ir, Rh, Ni, Fe, and Cr is made of an alloy material with Mn, the diffusion element that eliminates the antiferromagnetic properties is Pt,
Pd, Au, Ag, Cu, Ir, Rh, Ni, Fe, C
r is preferred.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A manufacturing process according to a first embodiment of the present invention will now be described with reference to FIGS. Referring to FIG. 2A, first, an Al ₂ O ₃ film having a thickness of 2 μm is deposited on an Al ₂ O ₃ —TiC substrate by a sputtering method, and then 100 [Oe] is deposited by a selective electrolytic plating method. While applying a magnetic field, Ni having a thickness of 1 to 3 μm, for example, 3 μm.
An Fe film is formed to form a lower magnetic shield layer (none is shown). Then, an Al ₂ O ₃ film having a thickness of, for example, 500 ° is deposited by sputtering, and then ion milling is performed. The lower read gap layer 11 is formed by patterning into a predetermined shape,
Next, a spin valve film for forming a magnetoresistive element is deposited.

As the spin valve film, for example, 8
By applying a magnetic field of 0 [Oe] and using a sputtering method, the thickness of the Ta layer
2 is formed, and the thickness is, for example, 40 ° NiFe.
A free layer 13, a CoFe free layer 14 having a thickness of, for example, 25 °, a Cu intermediate layer 15 having a thickness of, for example, 25 °,
For example, a CoFe pinned layer 16 having a thickness of 25 ° and a PdP layer having a thickness of 20 to 300 °, for example, 250 °
The tMn film antiferromagnetic layer 17 is formed by sequentially laminating.

In this case, the composition of NiFe is, for example, Ni ₈₁ Fe ₁₉ , and the composition of CoFe is, for example,
Co ₉₀ Fe ₁₀ , and the composition of PdPtMn is, for example, Pd ₃₁ Pt ₁₇ Mn ₅₂ . In this case, the magnitude of the applied magnetic field needs to be large enough to give anisotropy to the NiFe free layer 13, but if it is excessive, the distribution of the film thickness deposited by the sputtering method. Will be adversely affected.

Subsequently, after depositing an Au layer 18 having a thickness of 20 to 500 Å, for example, 400 Å, a resist film (not shown) is formed in a region other than an external magnetic field reading region of the spin valve film. Then, the Au layer 18 on the external magnetic field reading region of the spin valve film is removed, and then the resist layer is removed. In this case, the removal width of the Au layer 18 is 40 Gbit / inch ² (≒ 6.2 Gbit).
/ Cm ² ) to achieve a recording density of 0.25 μm
And

Next, as shown in FIG. 2B, a Ta layer 19 serving as an antioxidant film is deposited on the entire surface again by sputtering to a thickness of, for example, 60 °, and then 1 × 10 ^-4. Pa or less, for example,
In a vacuum of 1 × 10 ⁻⁵ Pa, 100 [Oe] or more in a direction orthogonal to the magnetic field applied during film formation, for example, 25
While applying a DC magnetic field of 00 [Oe], 25
Heat treatment is performed at 0 to 280 ° C, for example, 280 ° C for 0.5 to 5 hours, for example, 3 hours. In this case, 280
In the heat treatment step of C.degree.
The CoFe free layer 1 serving as a barrier layer between the u and the NiFe free layer 13 so that no mutual diffusion occurs between them.
4 to form a two-layer free layer.

By the heat treatment in the state where the magnetic field is applied, the magnetization direction of the CoFe pinned layer 16 is fixed as the direction of the DC magnetic field to which the magnetization direction of the PdPtMn antiferromagnetic layer 17 is applied.
The region other than the region where the external magnetic field is read out of the spin valve film by diffusing Au into the n anti-ferromagnetic layer 17 is removed.
As a result, the antiferromagnetic properties are lost. Therefore, no change in magnetoresistance occurs in a region other than the external magnetic field reading region.

Next, by performing ion milling using Ar ions by using the resist pattern 21 as a mask, the exposed portions of the spin valve film, the Au layer 18 and the Ta layer 19 are removed, and the spin pattern is removed. Form a valve element. Next, a hard bias layer 22 made of a CoCrPt film having a thickness of 10 to 500 Å, for example, 200 Å is deposited on the entire surface by sputtering. In this case, the composition of CoCrPt constituting the hard bias layer 22 is, for example, Co
₇₈ Cr ₁₀ Pt ₁₂ .

Next, after the hard bias layer 22 deposited on the resist pattern 21 is removed together with the resist pattern 21 by a lift-off method, a thick electrode is again formed by a sputtering method to form a lead electrode. For example, 10
An Al film 23 of 0 nm (= 1000 °) is deposited on the entire surface.

Referring to FIG. 3E, the Al layer 23 is subjected to ion milling using Ar ions by using a resist pattern 24 having an opening corresponding to the core width as a mask, thereby removing the exposed portion of the Al layer 23 to thereby obtain a lead. An electrode 25 is formed.

Next, after removing the resist pattern 24, although not shown, an Al ₂ O ₃ film having a thickness of, for example, 500 ° is deposited again by a sputtering method, after which the illustration is omitted. Forming an upper read gap layer by patterning into a predetermined shape using an ion milling method,
Then, the thickness is 1-3 μm by selective electrolytic plating.
The basic configuration of the MR head using a single spin valve element as a magnetoresistive effect element is completed by forming a NiFe film having a thickness of m, for example, 3 μm to form an upper magnetic shield layer.

As described above, in the first embodiment of the present invention, the PdPtMn antiferromagnetic layer 17 is used as an external magnetic field reading area by utilizing the fact that the antiferromagnetic property is very sensitive to the composition. Since Au is diffused into the region to lose the antiferromagnetic property, the pinning force is drastically reduced in the Au diffusion layer 20, and no change in magnetoresistance occurs in this region. Are almost the same, and it is possible to achieve both narrower core width and improved sensitivity.

Next, referring to FIG.
A second embodiment of the present invention in which the stacking order is reversed will be described.
However, the basic manufacturing process excluding the lamination order is
Since it is completely the same as the first embodiment, the illustration is simplified.
You. FIG. 4 is a schematic diagram of an MR head according to a second embodiment of the present invention.
FIG._TwoO_Three-Switch on TiC substrate
Al with a thickness of 2 μm using the sputtering method_TwoO _ThreePile membrane
After that, 100 [O
e) while applying the magnetic field, the thickness is 1 to 3 μm, for example.
For example, a 3 μm NiFe film is formed to form a lower magnetic shield layer.
(Neither is shown) and then sputtering
And the thickness is, for example, 500 °_TwoO_ThreeMembrane
After being deposited, it is formed into a predetermined shape by ion milling.
Lower read gap layer 1 by patterning
1 and then to form a magnetoresistive element
Is deposited.

As the spin valve film according to the second embodiment, for example, the thickness serving as an underlayer is formed by sputtering while applying a magnetic field of 80 [Oe].
For example, after forming a 50 ° Ta layer 12 and a 50 ° NiFe layer (not shown), the thickness is 20 to 300 mm.
{, For example, 250 ° PdPtMn film antiferromagnetic layer 1
7, a CoFe pinned layer 16 having a thickness of, for example, 25 °,
The thickness is, for example, a Cu intermediate layer 15 having a thickness of 25 °, the thickness is, for example, a CoFe free layer 14 having a thickness of 25 °, and the thickness is, for example,
For example, it is formed by sequentially laminating a 40 ° NiFe free layer 13.

Thereafter, similarly to the first embodiment, the thickness is 250 to 500 °, for example, 400 ° A.
After the u-layer 18 is deposited, a resist layer (not shown) is formed in a region other than the region for reading the external magnetic field of the spin valve film.
The Au layer 18 on the external magnetic field reading area of 5 μm is removed, and then the resist layer is removed.

Next, a Ta layer 19 serving as an antioxidant film is formed on the entire surface again by the sputtering method.
After being deposited at 60 °, in a vacuum of 1 × 10 ⁻⁴ Pa or less, for example, 1 × 10 ⁻⁵ Pa, at least 100 [Oe] in a direction orthogonal to the magnetic field applied at the time of film formation,
For example, while applying a DC magnetic field of 2500 [Oe],
250-280 ° C. in vacuum, for example 30-280 ° C.
Heat treatment is performed for 300 minutes, for example, 180 minutes.

By the heat treatment in the state where the magnetic field is applied, the NiFe free layer 13 and the CoFe free layer 1
The region other than the region where the Au magnetic field is read out of the spin valve film by diffusing Au from the Au layer 18 to the Au
Degrades magnetic characteristics. Therefore, in an area other than the external magnetic field reading area, the Cu intermediate layer 15
Electron scattering due to the magnetization direction at the interface with the substrate does not occur, and the change in magnetoresistance is suppressed.

Next, a resist pattern (not shown)
Milling using Ar ions as a mask, the spin valve film, the Au layer 18, and
The exposed portion of the Ta layer 19 is removed to form a spin valve element. Next, a hard bias layer 22 made of a CoCrPt film having a thickness of 10 to 500 Å, for example, 200 Å is deposited on the entire surface by sputtering.

Next, after removing the hard bias layer 22 deposited on the resist pattern together with the resist pattern by a lift-off method, the thickness of the lead electrode is again set by using a sputtering method, for example.
A 1000 ° Al film is deposited on the entire surface.

Next, an opening corresponding to the core width is provided.
Using Ar ions with the resist pattern as a mask
By performing on-milling, the exposed portion of the Al layer is removed.
After forming the lead electrode 25 by removing,
The distaste pattern is removed and then sputtered again.
The thickness is, for example, 500 °_TwoO _Three
After depositing the film, the desired shape is formed using the ion milling method.
By patterning the upper lead gap layer
Is formed, and then the thickness is reduced by selective electrolytic plating.
After forming a 1-3 μm, for example, 3 μm, NiFe film,
Single spin bar
Basic structure of an MR head using a lube element as a magnetoresistive element.
The result is completed.

As described above, in the second embodiment of the present invention, the external magnetic field reading area of the NiFe free layer 13 and the CoFe free layer 14 is utilized by utilizing the fact that the magnetic properties of the magnetic material are very sensitive to the composition. Since Au is diffused into a region other than the region to deteriorate the magnetic characteristics, the Au diffusion layer 2
Electron scattering due to the magnetization direction at the interface between the Cu 6 and the Cu intermediate layer 15 does not occur, the change in magnetoresistance is suppressed, and the design core width and the effective core width almost coincide with each other. Can be improved at the same time.

Next, a third embodiment of the present invention using an anisotropic magnetoresistive element (AMR element) instead of a spin valve element as a magnetoresistive element will be described with reference to FIG. However, except for the step of forming the AMR element,
Therefore, the description of the manufacturing process will be omitted. FIG. 5 is a schematic cross-sectional view of a third embodiment of the present invention. The thickness of a lower read gap layer 11 made of Al ₂ O ₃ is For example, 50 ° N
The bias applying layer 27 made of iFe has a thickness of, for example,
A 50 ° Al ₂ O ₃ layer 28 and, for example, a thickness of 10
0 ° NiFe magnetoresistive layer 29 is sequentially deposited, and Au is diffused from the Au layer 18 to the NiFe magnetoresistive layer 29 to form Au.
The diffusion layer 30 is formed. In this case, the compositions of the bias applying layer 27 and the NiFe magnetoresistive layer 29 are as follows:
For example, Ni ₈₁ Fe ₁₉ is used.

Also in the third embodiment, NiF
Since the Au is diffused into a region other than the external magnetic field reading region of the e-magnetoresistive layer 29 to deteriorate the magnetic characteristics,
The change in the magnetoresistance in the Au diffusion layer 30 is suppressed, and the design core width and the effective core width substantially match, so that it is possible to achieve both narrower core width and improved sensitivity.

Next, a fourth embodiment of the present invention using a tunnel magnetoresistive element (TMR element) instead of a spin valve element as a magnetoresistive element will be described with reference to FIG. Except for the process of forming the TMR element, it is the same as the first embodiment, and the description of the manufacturing process is omitted. FIG. 6 is a schematic cross-sectional view of a fourth embodiment of the present invention. The thickness of the lower read gap layer 11 made of Al ₂ O ₃ is reduced via a Ta layer 12 via a Ta layer 12. For example, 40 ° N
iFe free layer 31, CoF having a thickness of, for example, 25 °
e-free layer 32, Cu intermediate layer 33 having a thickness of, for example, 25 °, oxide layer 34 made of Al ₂ O ₃ having a thickness of, for example, 13 °, CoFe pinned layer 35 having a thickness of, for example, 25 °, and , Having a thickness of 20 to 300 mm, for example, 250 mm
Of the PdPtMn film antiferromagnetic layer 36 are sequentially laminated.

Also in the fourth embodiment, PdP
Since Au is diffused in the tMn film antiferromagnetic layer 36 in a region other than the external magnetic field reading region to deteriorate the magnetic characteristics, the pinning force in the Au diffusion layer 37 is drastically reduced, so that the change in magnetoresistance is suppressed. Since the design core width and the effective core width are almost the same, it is possible to achieve both narrower core width and improved sensitivity.

Next, referring to FIG. 7, a fifth embodiment of the present invention using a TMR element having an antiferromagnetic layer on the lower side as a magnetoresistive element corresponding to the second embodiment described above. However, except for the step of forming the TMR element,
Since it is the same as the first embodiment, the description of the manufacturing process is omitted. FIG. 7 is a schematic sectional view of a fifth embodiment of the present invention, in which a thickness of 20 μm is formed on a lower read gap layer 11 made of Al ₂ O ₃ via a Ta layer 12. A PdPtMn film antiferromagnetic layer 36 of about 300 °, for example, 250 °, a CoFe pinned layer 35 of, for example, 25 °
For example, a Cu intermediate layer 33 of 25 °
An oxide layer 34 made of Al ₂ O _{3 with} a thickness of ₃ °, a CoFe free layer 32 with a thickness of, for example, 25 °, and a NiFe free layer 31 with a thickness of, for example, 40 ° are sequentially laminated.

Also in the fifth embodiment, NiF
Since Au is diffused into the e-free layer 31 and the CoFe-free layer 32 in regions other than the external magnetic field reading region to deteriorate the magnetic characteristics, the Au diffusion layer 38 and the Cu intermediate layer 3
Electron scattering due to the magnetization direction at the interface with No. 3 does not occur, the change in magnetoresistance is suppressed, and the design core width and the effective core width are almost the same. Will be possible.

The embodiments of the present invention have been described above. However, the present invention is not limited to the configuration described in each embodiment, and various modifications are possible. For example, as the magnetoresistive element, a magnetoresistive element using an artificial lattice film in the third embodiment may be used instead of the AMR element. In this case, for example, a Co ₉₀ Fe ₁₀ film having a thickness of 11 ° and a Cu film having a thickness of 21 ° are alternately sequentially deposited into 10 layers to form an artificial lattice film, which becomes an external magnetic field reading region of the artificial lattice film. An Au layer may be selectively provided in a region other than the above, and Au may be diffused from the Au layer to deteriorate magnetic properties.

In the description of the first and second embodiments of the present invention, a spin valve film, ie, NiFe / CoFe / Cu / CoFe / P is used as a magnetoresistive element.
Although a single spin valve element made of dPtMn is used, the invention is not limited to such a single spin valve element. For example, NiFe / Cu / NiFe / F
A single spin valve element having another laminated structure such as eMn may be used, and further, a double spin valve element may be used.

In the description of each of the above embodiments, CoCrPt is used as the hard bias layer. However, the hard bias layer is not limited to CoCrPt.
Another high coercive force film such as CoCr may be used.

In each of the above embodiments, N
iFe, CoFe, PdPtMn, and CoCrPt
Ni ₈₁ Fe ₁₉ , Co ₉₀ Fe ₁₀ , Pd ₃₁ P
Although t ₁₇ Mn ₅₂ and Co ₇₈ Cr ₁₀ Pt ₁₂ are used, the composition ratio is not limited to such a composition ratio. If the composition ratio is appropriately selected according to the required magnetic characteristics and processing characteristics, etc. Good thing.

Further, the antiferromagnetic layer is not limited to PdPtMn, but may be Pt, Pd, Au, Ag, Cu, I
An alloy material of Mn and one or more of r, Rh, Ni, Fe, and Cr may be used.
Further, the diffusion element for eliminating the antiferromagnetic properties is not limited to Au, but may be Pt, Pd, Ag, Cu, Ir, Rh,
One or more of Ni, Fe, and Cr may be used.

The free layer is made of NiFe or CoFe.
It is not limited to Au, but NiFeCo may be used. Also in this case, the element that deteriorates the magnetic characteristics is not limited to Au, and Ag, Cu, Ni,
One or more of Fe and Co may be used.

In the description of each of the above embodiments, an Al film is used as the lead electrode 25.
The film is not limited to a film, and a Ta / TiW / Ta laminated structure film, a Cu film, or an Au film may be used.

In each of the above embodiments, the ion milling method is used when patterning the lead electrode 25. However, the present invention is not limited to the ion milling method, and the RIE (reactive ion etching) method may be used. May be used.

In the description of each embodiment of the present invention, a single MR head structure is described. However, the present invention is not limited to such a single MR head, but may be an inductive thin film. It goes without saying that the present invention is also applied to a composite type thin film magnetic head laminated with a magnetic head.

[0058]

According to the present invention, a non-magnetic element such as Au is diffused into a region other than an external magnetic field reading region of a magnetoresistive element constituting a thin-film magnetic head to deteriorate magnetic characteristics or to reduce magnetic characteristics. Since the ferromagnetic properties are lost, the change in magnetoresistance outside the external magnetic field reading area is suppressed,
It is possible to realize a magnetoresistive element having a narrow signal reading width and a high density, which greatly contributes to the spread of HDD devices having a high recording density.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of a basic configuration of the present invention.

FIG. 2 is an explanatory diagram of a manufacturing process partway through the first embodiment of the present invention.

FIG. 3 is an explanatory view of a manufacturing process of the first embodiment of the present invention after FIG. 2;

FIG. 4 is a schematic sectional view of a second embodiment of the present invention.

FIG. 5 is a schematic sectional view of a third embodiment of the present invention.

FIG. 6 is a schematic sectional view of a fourth embodiment of the present invention.

FIG. 7 is a schematic sectional view of a fifth embodiment of the present invention.

FIG. 8 is a schematic sectional view of a conventional magnetoresistance effect element.

FIG. 9 is a schematic sectional view of a conventional magnetoresistive element having an overlay structure.

[Explanation of symbols]

Reference Signs List 1 magnetic material layer 2 intermediate layer 3 magnetic material layer 4 antiferromagnetic layer 5 diffusion material layer 6 diffusion layer 7 diffusion layer 11 lower read gap layer 12 Ta layer 13 NiFe free layer 14 CoFe free layer 15 Cu intermediate layer 16 CoFe pinned layer 17 PdPtMn antiferromagnetic layer 18 Au layer 19 Ta layer 20 Au diffusion layer 21 a resist pattern 22 hard bias layer 23 Al layer 24 a resist pattern 25 lead electrode 26 Au diffusion layer 27 biasing layer 28 Al ₂ O ₃ layer 29 NiFe magnetic Resistance layer 30 Au diffusion layer 31 NiFe free layer 32 CoFe free layer 33 Cu intermediate layer 34 Oxide layer 35 CoFe pinned layer 36 PdPtMn antiferromagnetic layer 37 Au diffusion layer 38 Au diffusion layer 41 Lower read gap layer 42 Ta layer 43 free layer 44 Middle layer 45 Pinned 46 antiferromagnetic layer 47 hard bias layer 48 lead electrode 49 deadband

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Reiko Kondo 4-1-1, Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa F-term in Fujitsu Limited (reference) 5D034 BA04 BA05 BA05 BA21 CA08

Claims (3)

[Claims] A diffusion material layer made of one or more magnetic material layers magnetized in one direction, and a diffusion material layer made of a non-magnetic material is provided in a portion other than an external signal reading portion so as to be in contact with the portion. A magnetoresistive element, wherein the magnetic material layer in contact with the layer is a diffusion layer in which elements of the diffusion material layer are diffused. 2. One or more magnetic material layers magnetized in one direction are provided on both sides of an intermediate layer made of a non-magnetic material, and an antiferromagnetic layer is provided so as to be in contact with the magnetic material layer on one side. A diffusion material layer made of a non-magnetic material is provided in a portion other than the signal reading portion so as to be in contact with either the antiferromagnetic layer in the portion or the magnetic material layer on the other side, and the anti-ferromagnetic layer in contact with the diffusion material layer A magnetoresistive element, wherein either the magnetic layer or the magnetic material layer on the other side is a diffusion layer in which elements of the diffusion material layer are diffused. 3. The method according to claim 1, wherein the diffusion material layer is made of Pt, Pd, Au,
3. The magnetoresistive element according to claim 1, wherein the element is made of one or more of Ag, Cu, Ir, Rh, Ni, Fe, Cr, and Co.