JP2001168464A - Multi-wavelength semiconductor laser element and manufacturing method therefor - Google Patents

Multi-wavelength semiconductor laser element and manufacturing method therefor

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JP2001168464A
JP2001168464A JP34743899A JP34743899A JP2001168464A JP 2001168464 A JP2001168464 A JP 2001168464A JP 34743899 A JP34743899 A JP 34743899A JP 34743899 A JP34743899 A JP 34743899A JP 2001168464 A JP2001168464 A JP 2001168464A
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gaas
layer
substrate
clad
laser
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Shinichi Azuma
新一 我妻
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Sony Corp
ソニー株式会社
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Abstract

PROBLEM TO BE SOLVED: To provide a multi-wavelength semiconductor laser element of a configuration which is easily manufactured.
SOLUTION: A multi-wavelength semiconductor laser element 10 comprises a semi-insulating GaAs substrate 16, where first and second slopes 12 and 14 tilted, at a tilt angle θ1 and a tilt angle θ2 respectively, in a (111) A plane direction are provided alternately, as well as an n-AlGaInP lower clad layer 18, GaInP active layer 20, and a P-AlGaInP upper clad layer 22 epitaxial-grown sequentially by an MOCVD method, etc., along the slope of GaAs substrate 16. A p-side electrode 24 is formed on slopes 26 and 28 of the upper clad layer 22 parallel to the first and second slopes 12 and 14 of the GaAs substrate 16, while an n-side electrode 30 is formed on the rear surface of the GaAs substrate 16.
COPYRIGHT: (C)2001,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、多波長半導体レーザ素子及びその製造方法に関し、更に詳細には、作製の容易な構成を備えた半導体レーザ素子及びその作製方法に関するものである。 BACKGROUND OF THE INVENTION The present invention relates to a multi-wavelength semiconductor laser device and a manufacturing method thereof, and more particularly, to a semiconductor laser device and a manufacturing method thereof with a simple structure of the manufacturing.

【0002】 [0002]

【従来の技術】半導体レーザ素子、なかでも波長650 BACKGROUND OF THE INVENTION semiconductor laser element, and among them, wavelength 650
nmの可視レーザ光を発光するAlGaInP系半導体レーザ素子は、光ディスク記録・再生装置等の光ピックアップ、光通信機器等の光源として多用されている。 AlGaInP semiconductor laser device that emits visible laser light nm, the optical pickup such as an optical disc recording and reproducing apparatus, is widely used as a light source of an optical communication device or the like.

【0003】ここで、図4を参照して、従来のAlGa [0003] In this case, with reference to FIG. 4, the conventional AlGa
InP系半導体レーザ素子の作製方法及び基本的構成を説明する。 Illustrating a manufacturing method and a basic configuration of the InP-based semiconductor laser device. 図4(a)及び(b)は、従来のAlGaI 4 (a) and (b) a conventional AlGaI
nP系半導体レーザ素子を作製する際の工程毎の基板断面図である。 It is a substrate cross-sectional view of each process of making the nP-based semiconductor laser device. また、図5は従来の半導体レーザ素子の発光部の位置を示す模式図である。 Further, FIG. 5 is a schematic view showing the position of the light emitting portion of a conventional semiconductor laser device. 先ず、図4(a)に示すように、主面が平坦なGaAs基板42上に、MOC First, as shown in FIG. 4 (a), the main surface on a flat GaAs substrate 42, MOC
VD法等によって、順次、n−AlGaInP下クラッド層44、活性層46、及びp−AlGaInP上クラッド層48をエピタキシャル成長させ、積層構造を形成する。 The VD method, sequentially, n-AlGaInP lower cladding layer 44, an active layer 46 and p-AlGaInP upper cladding layer 48, is epitaxially grown to form a laminated structure. 次いで、図4(b)に示すように、上クラッド層48上にp側電極50を、GaAs基板42の裏面にn Then, as shown in FIG. 4 (b), the p-side electrode 50 on the upper cladding layer 48, the back surface of the GaAs substrate 42 n
側電極52をそれぞれ形成する。 Forming a side electrode 52, respectively. 以上の工程によって、 Through the above steps,
AlGaInP系半導体レーザ素子40の基本的構造を作製することができる。 It can be produced basic structure of an AlGaInP semiconductor laser device 40. 尚、図4では、簡単にするために、電流狭窄構造、光閉じ込め構造等を省略している。 In FIG. 4, for simplicity, it is omitted current confinement structure, the light confinement structure or the like.

【0004】従来の半導体レーザ素子40では、p側電極50からn側電極52に電流を注入すると、図5に示すように、活性層46のp側電極直下領域が発光部54 [0004] In the conventional semiconductor laser element 40, when current is injected from the p-side electrode 50 on the n-side electrode 52, as shown in FIG. 5, the p-side electrode region immediately below the light emitting portion 54 of the active layer 46
となって、波長650nmのレーザ光を発光する。 It becomes, for emitting a laser beam having a wavelength of 650 nm.

【0005】 [0005]

【発明が解決しようとする課題】ところで、最近の光ディスク記録・再生装置等では、異なる様式の複数種の光ディスク、例えばコンパクト・ディスクと光磁気ディスクとを一つの装置で記録、再生することが要請されている。 [SUMMARY OF THE INVENTION Incidentally, in a recent optical disk recording and reproducing apparatus or the like, a plurality of kinds of optical disks different modes, for example, records the compact disc and the magneto-optical disk in a single device, to be reproduced request It is. そして、このためには、相互に波長の異なるレーザ光を光源とする光ピックアップが必要になる。 Then, for this purpose, it becomes mutually laser beams of different wavelengths require an optical pickup as a light source. 従って、 Therefore,
一つの半導体レーザ素子から相互に波長の異なる複数のレーザ光を発光させる多波長半導体レーザ素子が求められている。 Multi-wavelength semiconductor laser device from a single semiconductor laser element to emit a plurality of laser beams having different wavelengths from each other are required.

【0006】そこで、本発明の目的は、作製の容易な構成を備えた多波長半導体レーザ素子及びその作製方法を提供することである。 An object of the present invention is to provide a multi-wavelength semiconductor laser device and a manufacturing method having the simple structure of the manufacturing.

【0007】 [0007]

【課題を解決するための手段】ところで、従来から、 In order to solve the problem the way, from the prior art,
(111)A面方向、又は(111)B面方向に数度から十数度傾斜させた傾斜面を備える(001)基板上に、AlGaInP系ダブルヘテロ接合積層構造を形成することにより、活性層の組成を変えずに、AlGaI (111) A plane direction, or (111) B plane direction includes an inclined surface is inclined dozen degrees few degrees (001) substrate, by forming an AlGaInP based double heterojunction laminated structure, the active layer without changing the composition of, AlGaI
nP系半導体レーザ素子の発振波長を制御する手法が、 Method for controlling the oscillation wavelength of the nP-based semiconductor laser device,
例えば下記の文献等で提案されている。 For example, it has been proposed in the literature like the following. H.Hamada,et al:IEEE J.Quantum Elecron 27 (1991) 14 H.Hamada, et al: IEEE J.Quantum Elecron 27 (1991) 14
83 S.Minagawa and M.Kondow : Elecron Lett. 25 (1989) 83 S.Minagawa and M.Kondow:. Elecron Lett 25 (1989)
758 M.Ikeda,et al : Elecron Lett. 24 (1988) 1095 758 M.Ikeda, et al:. Elecron Lett 24 (1988) 1095

【0008】上述の文献によれば、傾斜基板上にAlG [0008] According to the above documents, AlGaAs on the inclined substrate
aInP系化合物半導体層を成長させることにより、A By growing the aInP based compound semiconductor layer, A
lGaInP系半導体レーザ素子の短波長化を図ることができる。 It is possible to shorten the wavelength of lGaInP based semiconductor laser device. これは、AlGaInP系化合物半導体層の特有の性質であって、バンドギャップエネルギーが基板方位に依存して変わるからである。 This is a unique property of AlGaInP-based compound semiconductor layer, the band gap energy is because vary depending on the substrate orientation. つまり、AlGaI In other words, AlGaI
nP系では、結晶の組成が同じであっても、III族原子が規則的に並んで自然超格子を形成している状態と、 In nP system, even the composition of the crystals is the same, and a state where the group III atoms form a natural superlattice regularly arranged,
無秩序に並んでいる状態とでは、バンドギャップエネルギーが異なり、そして、このような結晶の秩序状態は、 In a state where are arranged disorderly, different band gap energy and, ordered state of such crystals,
成長条件や基板の面方位に依存して変わる。 It varies depending on the plane orientation of the growth conditions and the substrate. 例えば(1 For example, (1
00)から〔011〕方向に傾いた面方位の基板結晶の上にAlGaInPを成長させると、そのバンドギャップエネルギーが大きくなる。 00) from the [011] When growing AlGaInP on the direction inclined plane orientation of the substrate crystal, the band gap energy becomes large.

【0009】従来、例えば(111)A面方向に傾斜角0°、8°、10°、及び15°で傾斜する傾斜面を備えた基板上にAlGaInP系ダブルヘテロ接合積層構造を形成した半導体レーザ素子が開発されつつある。 Conventionally, for example, (111) inclination angle of 0 ° in the A plane direction, 8 °, 10 °, and a semiconductor laser formed of an AlGaInP double heterojunction laminated structure on a substrate having an inclined surface inclined at 15 ° elements are being developed. しかし、この手法では、使用する傾斜基板の基板方位により発振波長がほぼ決定されてしまうこと、つまり、一つの傾斜基板上には1波長のレーザ光を発光する半導体レーザ素子しか作製できないという問題があって、そのまま多波長半導体レーザ素子の作製に適用できない。 However, in this technique, the oscillation wavelength by the substrate orientation of the inclined substrate used will be substantially determined, that is, the one inclined substrate is a problem that only the semiconductor laser element for emitting a laser beam of one wavelength can not be produced there are, can not be directly applied to manufacturing of multi-wavelength semiconductor laser device. 本発明者は、上述の傾斜基板の手法を発展させ、相互に異なる傾斜角を有する複数個の傾斜面を有する基板上にAl The present inventor has developed a method of inclined substrate described above, Al on a substrate having a plurality of inclined surfaces having mutually different tilt angles
GaInP系ダブルヘテロ接合積層構造を形成することを着想し、本発明を発明するに到った。 Conceived forming a GaInP-based double heterojunction layered structures were led to the invention of the present invention.

【0010】上記目的を達成するために、本発明に係る多波長半導体レーザ素子は、相互に異なる傾斜角で(1 [0010] To achieve the above object, a multi-wavelength semiconductor laser device according to the present invention, another at different inclination angles (1
11)A面方向に傾斜する複数個の傾斜面を周期的な配列で備える化合物半導体基板と、化合物半導体基板の傾斜面上に、傾斜面に沿ってエピタキシャル成長させた、 11) a compound semiconductor substrate having a plurality of inclined surfaces inclined in the A plane direction in a periodic arrangement, on the inclined surface of the compound semiconductor substrate, is epitaxially grown along the inclined surface,
活性層を含むAlGaInP系化合物半導体層からなる積層構造と、相互に異なる傾斜角で(111)A面方向に傾斜する複数個の傾斜面からなる、積層構造の最上層の上面に形成された第1の電極と、基板裏面に形成された第2の電極とを備えることを特徴としている。 A laminated structure made of AlGaInP-based compound semiconductor layers including an active layer, the mutually comprising a plurality of inclined surfaces inclined in different tilt angles (111) A plane direction, is formed on top of the uppermost layer of the laminated structure a first electrode, and further comprising a second electrode formed on the back surface of the substrate.

【0011】本発明では、基板方位の異なる複数の傾斜面上にAlGaInP系の化合物半導体材料で活性層を形成することにより、活性層の自然超格子の形成度合いが異なるので、異なる発振波長の発光構造を備えた多波長半導体レーザ素子を実現することができる。 In the present invention, by forming the active layer of a compound semiconductor of an AlGaInP-based material on different inclined surfaces of the substrate orientation, since formation degree of natural superlattice of the active layer are different, the light emission of different oscillation wavelengths it is possible to realize a multi-wavelength semiconductor laser element having a structure. 本発明では、好適な傾斜角は、0°、8°、10°、及び15° In the present invention, a suitable tilt angle, 0 °, 8 °, 10 °, and 15 °
のいずれかである。 It is either.

【0012】また、本発明に係る多波長半導体レーザ素子の作製方法は、相互に異なる傾斜角で(111)A面方向に傾斜する複数個の周期的な配列で設けられた化合物半導体基板の傾斜面上に、傾斜面に沿って活性層を含むAlGaInP系化合物半導体層をエピタキシャル成長させて、積層構造を形成する工程と、相互に異なる傾斜角で(111)A面方向に傾斜する複数個の傾斜面からなる、積層構造の最上層の上面に第1の電極を形成し、かつ基板裏面に第2の電極を形成する工程とを備えることを特徴としている。 Further, a method for manufacturing a multi-wavelength semiconductor laser device according to the present invention, a compound semiconductor substrate provided with a plurality of periodic sequences inclined mutually at different tilt angles (111) A plane direction gradient on the surface, the AlGaInP-based compound semiconductor layers including an active layer along the inclined surface by epitaxial growth, forming a laminated structure, mutually at different tilt angles (111) a plurality of inclined sloping surface a direction consisting face, it is characterized in that the first electrode is formed on the upper surface of the uppermost layer of the laminated structure, and comprises a step of forming a second electrode on the rear surface of the substrate. 本発明方法で、化合物半導体層をエピタキシャル成長させる方法には制約は無く、例えばMOCVD法等を使って成長させる。 In the present invention method, the method of epitaxially growing a compound semiconductor layer constraint is not, for example, is grown using the MOCVD method or the like.

【0013】 [0013]

【発明の実施の形態】以下に、実施形態例を挙げ、添付図面を参照して、本発明の実施の形態を具体的かつ詳細に説明する。 DETAILED DESCRIPTION OF THE INVENTION below, exemplifying embodiment, with reference to the accompanying drawings, an embodiment of the present invention specifically and in detail. 多波長半導体レーザ素子の実施形態例本実施形態例は、本発明に係る多波長半導体レーザ素子の実施形態の一例であって、図1(a)は本実施形態例の多波長半導体レーザ素子の構成を示す断面図、及び図1(b)は傾斜面の拡大図である。 Embodiment the present exemplary embodiment of a multi-wavelength semiconductor laser device, an example embodiment of a multi-wavelength semiconductor laser device according to the present invention, FIG. 1 (a) of the multi-wavelength semiconductor laser device of the present embodiment cross-sectional view showing the configuration, and FIG. 1 (b) is an enlarged view of the inclined surface. また、図2は本実施形態例の多波長半導体レーザ素子の発光部の位置を示す模式図である。 Also, FIG. 2 is a schematic view showing the position of the light emitting portion of the multi-wavelength semiconductor laser device of the present embodiment. 本実施形態例の多波長半導体レーザ素子10は、AlGaInP系化合物半導体層の積層構造を有し、図1(a)に示すように、相互に異なる傾斜角θ Multi-wavelength semiconductor laser device 10 of this embodiment has a laminated structure of an AlGaInP-based compound semiconductor layer, as shown in FIG. 1 (a), the inclination angles different from each other θ
1及び傾斜角θ 2で、それぞれ、(111)A面方向に傾斜する第1の傾斜面12と第2の傾斜面14とを交互に備える半絶縁性GaAs基板16と、GaAs基板1 1 and the inclination angle theta 2, respectively, the semi-insulating GaAs substrate 16 having alternately a first inclined surface 12 and the second inclined surface 14 which is inclined (111) A plane direction, the GaAs substrate 1
6の第1及び第2の傾斜面12、14上に、傾斜面に沿って順次、MOCVD法等によってエピタキシャル成長させた、n−AlGaInP下クラッド層18と、Ga On the first and second inclined surfaces 12, 14 of the 6, successively along the inclined surface, was epitaxially grown by MOCVD or the like, and n-AlGaInP lower cladding layer 18, Ga
InP活性層20と、p−AlGaInP上クラッド層22とを備えている。 And InP active layer 20, and a p-AlGaInP upper cladding layer 22. 第1の傾斜面12の傾斜角θ 1 Inclination angle theta 1 of the first inclined surface 12
は、図1(b)に示すように、約15°であり、第2の傾斜面14の傾斜角θ 2は0°に極めて近い角度である。 As shown in FIG. 1 (b), it is about 15 °, the inclination angle theta 2 of the second inclined surface 14 is very close angle 0 °. また、第1の傾斜面12及び第2の傾斜面14の(001)面での長さL 1及びL 2は、同じ長さLである。 The length L 1 and L 2 in the (001) plane of the first inclined surface 12 and the second inclined surface 14 is the same length L.

【0014】n−AlGaInP下クラッド層18、G [0014] n-AlGaInP lower cladding layer 18, G
aInP活性層20、及びp−AlGaInP上クラッド層22は、GaAs基板16の第1の傾斜面12及び第2の傾斜面14に沿って平行にエピタキシャル成長しているので、図1に示すように、それぞれ、ほぼ傾斜角θ 1及び傾斜角θ 2で(111)A面方向に傾斜する傾斜層となっている。 aInP active layer 20 and the p-AlGaInP upper cladding layer 22, is, since the parallel epitaxially grown along the first inclined surface 12 and the second inclined surface 14 of the GaAs substrate 16, as shown in FIG. 1, respectively, it is substantially inclined angle theta 1 and at a tilt angle θ 2 (111) inclined layer inclined surface a direction.

【0015】p側電極24が、GaAs基板16の傾斜面12及び傾斜面14に平行な上クラッド層22の傾斜面26及び傾斜面28上に、また、n側電極30がGa [0015] p-side electrode 24, on the inclined surface 26 and the inclined surface 28 of the upper cladding layer 22 parallel to the inclined surface 12 and the inclined surface 14 of the GaAs substrate 16, also, n-side electrode 30 is Ga
As基板16に裏面に、それぞれ、形成されている。 The back surface As substrate 16 are respectively formed. 本実施形態例では、p側電極24は、上クラッド層22上に形成されているが、オーミック電極を構成するために、上クラッド層22上にGaAs等からなるコンタクト層を成膜し、コンタクト層上に形成しても良い。 In the present embodiment, p-side electrodes 24 are formed on the upper cladding layer 22, in order to constitute an ohmic electrode, forming a contact layer made of GaAs or the like is formed on the upper cladding layer 22, the contact it may be formed on the layer. 尚、 still,
本実施形態例の多波長半導体レーザ素子10の説明では、簡単にするために、電流狭窄構造、光閉じ込め構造等を省略している。 In the description of the multi-wavelength semiconductor laser device 10 of the present embodiment, for simplicity, it is omitted current confinement structure, the light confinement structure or the like.

【0016】本実施形態例の多波長半導体レーザ素子1 The multi-wavelength semiconductor laser device of the present embodiment 1
0は、p側電極24からn側電極28に向かって電流を注入すると、図2に示すように、相互に傾斜角の異なる2個の活性層20a、20bが発光部32となって、発光する。 0, when current is injected toward the p-side electrode 24 on the n-side electrode 28, as shown in FIG. 2, two active layers 20a having different mutual inclination, 20b becomes the light emitting portion 32, light emitting to. 活性層20a、20bの傾斜角の違いにより、 The active layer 20a, due to the difference in the angle of inclination of the 20b,
活性層の自然超格子の形成度合いが異なるために、活性層20aから発光するレーザ光と活性層20bから発光するレーザ光との間で発振波長の差が生じるので、1つの半導体レーザ素子から相互に異なる2つの波長のレーザ光を発光させることができる。 To form the degree of natural superlattice of the active layer are different, the difference in oscillation wavelength between the laser light emitted from the laser beam and the active layer 20b of the light emitting from the active layer 20a occurs, cross from one semiconductor laser element it can emit laser light of two different wavelengths.

【0017】本実施形態例では、相互に異なる傾斜角を持つ2面の傾斜面を交互に基板に設けた例を示したが、 [0017] In this embodiment, an example provided on the substrate the sloped surface of two surfaces having mutually different tilt angles alternately,
相互に異なる傾斜角を持つ3面以上の傾斜面を周期的な配列で基板に形成し、各AlGaInP系化合物半導体層を基板の傾斜面に沿って設け、1つの半導体レーザ素子から相互に異なる三つ以上の波長のレーザ光を発光させることもできる。 Three sides or more inclined surfaces having mutually different tilt angles formed on the substrate in a periodic arrangement, each AlGaInP-based compound semiconductor layer provided along the inclined surface of the substrate, different from each other from one semiconductor laser element three One or more of a laser beam having a wavelength may be emitted. 更には、傾斜面の長さLを短くすることにより、量子効果を得る応用例も考えられる。 Furthermore, by shortening the length L of the inclined surface, conceivable applications to obtain the quantum effect.

【0018】 多波長半導体レーザ素子の製造方法の実施 The implementation of the method of manufacturing a multi-wavelength semiconductor laser element
形態例本実施形態例は、本発明に係る多波長半導体レーザ素子の製造方法の実施形態の一例であって、図3(a)から(c)は、それぞれ、本実施形態例の方法に従って多波長半導体レーザ素子を作製する際の工程毎の基板断面図である。 Embodiments the present embodiment is an example of embodiment of a method for manufacturing a multi-wavelength semiconductor laser device according to the present invention, FIG. 3 (a) (c), respectively, the multi accordance with the method of this embodiment it is a substrate cross-sectional view of each process of making the wavelength semiconductor laser device. 先ず、図3(a)に示すように、GaAs基板16の(001)面に、相互に異なる傾斜角θ 1及び傾斜角θ 2で(111)A面方向に傾斜する傾斜面12と14とを形成する。 First, as shown in FIG. 3 (a), (001) plane of the GaAs substrate 16, mutually at different tilt angles theta 1 and the inclination angle theta 2 (111) inclined surface 12 inclined surface A direction 14 and to form. 尚、傾斜面12及び傾斜面14の(001)面での長さL 0 Incidentally, the inclined surface 12 and the length L 0 in the (001) plane of the inclined surface 14 1及びL 2 (図1(b)参照)は、相互に同じ長さである。 1 and L 2 (see FIG. 1 (b)) are the same length each other.

【0019】次いで、図3(b)に示すように、GaA [0019] Then, as shown in FIG. 3 (b), GaA
s基板16の第1の傾斜面12及び第2の傾斜面14上に、傾斜面に沿って、順次、MOCVD法等によって、 On the first inclined surface 12 and the second inclined surface 14 of the s substrate 16, along the inclined surface, successively, by the MOCVD method or the like,
n−AlGaInP下クラッド層18、活性層20、及び、p−AlGaInP上クラッド層22をエピタキシャル成長させ、それぞれを、GaAs基板16の第1及び第2傾斜面12及び14に平行な、ほぼ傾斜角θ 1及び傾斜角θ 2で(111)A面方向に傾斜する傾斜層として形成する。 n-AlGaInP lower cladding layer 18, active layer 20, and a p-AlGaInP upper cladding layer 22 is epitaxially grown, respectively, parallel to the first and second inclined surfaces 12 and 14 of the GaAs substrate 16, substantially inclined angle θ 1 and the inclination angle θ 2 (111) is formed as an inclined layer inclined surface a direction. 次いで、図3(c)に示すように、Ga Then, as shown in FIG. 3 (c), Ga
As基板16の第1の傾斜面12及び第2の傾斜面14 First inclined surface 12 and the second inclined surface 14 of the As substrate 16
に平行な上クラッド層22の傾斜面26及び傾斜面28 Inclination of the upper cladding layer 22 parallel to the surface 26 and the inclined surface 28
上にp側電極24を、また、GaAs基板16に裏面にn側電極30を、それぞれ、形成する。 The p-side electrode 24 above, also the n-side electrode 30 on the back surface of the GaAs substrate 16, respectively, are formed. これにより、本実施形態例の多波長半導体レーザ素子10の基本的構造を形成することができる。 Thus, it is possible to form the basic structure of a multi-wavelength semiconductor laser device 10 of the present embodiment.

【0020】 [0020]

【発明の効果】本発明では、基板方位の異なる複数の傾斜面上にAlGaInP系の化合物半導体材料で活性層を形成することにより、活性層の自然超格子の形成度合いが異なるので、異なる発振波長の発光構造を備えた多波長半導体レーザ素子を実現することができる。 In the present invention, by forming the active layer of a compound semiconductor of an AlGaInP-based material on different inclined surfaces of the substrate orientation, since formation degree of natural superlattice of the active layer are different, different oscillation wavelengths it is possible to realize a multi-wavelength semiconductor laser device comprising a light emitting structure. 本発明方法は、本発明に係る多波長半導体レーザ素子を一つのプロセス工程で作製できる好適な方法を実現している。 The present invention realizes a suitable method capable of producing a multi-wavelength semiconductor laser device according to the present invention in one process step.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】図1(a)は本実施形態例の多波長半導体レーザ素子の構成を示す断面図、及び図1(b)は傾斜面の拡大図である。 1] Fig. 1 (a) is a cross-sectional view showing the structure of a multi-wavelength semiconductor laser device of the present embodiment, and FIG. 1 (b) is an enlarged view of the inclined surface.

【図2】実施形態例の多波長半導体レーザ素子の発光部の位置を示す模式図である。 2 is a schematic view showing the position of the light emitting portion of the multi-wavelength semiconductor laser device of an example embodiment.

【図3】図3(a)から(c)は、それぞれ、実施形態例の方法に従って多波長半導体レーザ素子を作製する際の工程毎の基板断面図である。 Figure 3 from (a) (c) are respectively a substrate cross-sectional view of each process of making the multi-wavelength semiconductor laser element according to the method of example embodiments.

【図4】図4(a)及び(b)は、それぞれ、従来のA [4] FIG. 4 (a) and (b), respectively, a conventional A
lGaInP系半導体レーザ素子を作製する際の工程毎の基板断面図である。 It is a substrate cross-sectional view of each process of making the lGaInP based semiconductor laser device.

【図5】従来の半導体レーザ素子の発光部の位置を示す模式図である。 5 is a schematic view showing the position of the light emitting portion of a conventional semiconductor laser device.

【符号の説明】 DESCRIPTION OF SYMBOLS

10……実施形態例の多波長半導体レーザ素子、12… Multi-wavelength semiconductor laser device 10 ...... embodiment, 12 ...
…第1の傾斜面、14……第2の傾斜面、16……Ga ... first inclined surface, 14 ...... second inclined surface, 16 ...... Ga
As基板、18……半絶縁性GaAs基板、20……G As substrate, 18 ...... semi-insulating GaAs substrate, 20 ...... G
aInP活性層、22……p−AlGaInP上クラッド層、24……p側電極、26、28……上クラッド層の傾斜面、30……n側電極、32……発光部、40… aInP active layer, 22 ...... p-AlGaInP upper cladding layer, 24 ...... p-side electrode, 26 and 28 inclined surface ...... upper cladding layer, 30 ...... n-side electrode, 32 ...... emitting portion, 40 ...
…従来の半導体レーザ素子、42……GaAs基板、4 ... conventional semiconductor laser element, 42 ...... GaAs substrate, 4
4……n−AlGaInP下クラッド層、46……活性層、48……p−AlGaInP上クラッド層、50… 4 ...... n-AlGaInP lower cladding layer, 46 ...... active layer, 48 ...... p-AlGaInP upper cladding layer, 50 ...
…p側電極、52……n側電極、54……発光部。 ... p-side electrode, 52 ...... n-side electrode, 54 ...... emitting portion.

Claims (3)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 相互に異なる傾斜角で(111)A面方向に傾斜する複数個の傾斜面を周期的な配列で備える化合物半導体基板と、 化合物半導体基板の傾斜面上に、傾斜面に沿ってエピタキシャル成長させた、活性層を含むAlGaInP系化合物半導体層からなる積層構造と、 相互に異なる傾斜角で(111)A面方向に傾斜する複数個の傾斜面からなる、積層構造の最上層の上面に形成された第1の電極と、 基板裏面に形成された第2の電極とを備えることを特徴とする多波長半導体レーザ素子。 And 1. A compound semiconductor substrate comprising mutually at different tilt angles (111) a plurality of inclined surfaces inclined in the A plane direction in a periodic arrangement, on the inclined surface of the compound semiconductor substrate, along the inclined surface Te is epitaxially grown, a laminate structure made of AlGaInP-based compound semiconductor layers including an active layer, comprising a plurality of inclined surfaces inclined mutually at different tilt angles (111) a plane direction, the top layer of the top surface of the layered structure multi-wavelength semiconductor laser device and a first electrode formed, characterized in that it comprises a second electrode formed on the back surface of the substrate to.
  2. 【請求項2】 傾斜角は、0°、8°、10°、及び1 Wherein inclination angles, 0 °, 8 °, 10 °, and 1
    5°のいずれかであることを特徴とする請求項1に記載の多波長半導体レーザ素子。 Multi-wavelength semiconductor laser device according to claim 1, wherein the the 5 ° either.
  3. 【請求項3】 相互に異なる傾斜角で(111)A面方向に傾斜する複数個の周期的な配列で設けられた化合物半導体基板の傾斜面上に、傾斜面に沿って活性層を含むAlGaInP系化合物半導体層をエピタキシャル成長させて、積層構造を形成する工程と、 相互に異なる傾斜角で(111)A面方向に傾斜する複数個の傾斜面からなる、積層構造の最上層の上面に第1 To 3. mutually at different tilt angles (111) Compound provided by a plurality of periodic sequences inclined surface A direction semiconductor substrate inclined plane, AlGaInP including an active layer along the inclined surface the system compound semiconductor layer is epitaxially grown, forming a laminated structure, comprising a plurality of inclined surfaces inclined mutually at different tilt angles (111) a plane direction, the first on top of the uppermost layer of the laminated structure
    の電極を形成し、かつ基板裏面に第2の電極を形成する工程とを備えることを特徴とする多波長半導体レーザ素子の作製方法。 The method for manufacturing a multi-wavelength semiconductor laser device of the electrodes is formed, and characterized in that it comprises a step of forming a second electrode on the rear surface of the substrate.
JP34743899A 1999-12-07 1999-12-07 Multi-wavelength semiconductor laser element and manufacturing method therefor Pending JP2001168464A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005129905A (en) * 2003-10-20 2005-05-19 California Inst Of Technology Nitride semiconductor device and method of manufacturing the same
WO2017077917A1 (en) * 2015-11-06 2017-05-11 ウシオ電機株式会社 Semiconductor light emitting element and method for manufacturing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005129905A (en) * 2003-10-20 2005-05-19 California Inst Of Technology Nitride semiconductor device and method of manufacturing the same
JP4637534B2 (en) * 2003-10-20 2011-02-23 カリフォルニア インステチュート オブ テクノロジーCalifornia Institute of Technology Light emitting diode device and a manufacturing method thereof
WO2017077917A1 (en) * 2015-11-06 2017-05-11 ウシオ電機株式会社 Semiconductor light emitting element and method for manufacturing same

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