JP2001144334A - Optical semiconductor device and forming method therefor - Google Patents

Optical semiconductor device and forming method therefor

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Publication number
JP2001144334A
JP2001144334A JP32623699A JP32623699A JP2001144334A JP 2001144334 A JP2001144334 A JP 2001144334A JP 32623699 A JP32623699 A JP 32623699A JP 32623699 A JP32623699 A JP 32623699A JP 2001144334 A JP2001144334 A JP 2001144334A
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Japan
Prior art keywords
optical semiconductor
die
semiconductor device
package
recess
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JP32623699A
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Japanese (ja)
Inventor
Hiroaki Tamemoto
広昭 為本
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Nichia Chem Ind Ltd
日亜化学工業株式会社
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Application filed by Nichia Chem Ind Ltd, 日亜化学工業株式会社 filed Critical Nichia Chem Ind Ltd
Priority to JP32623699A priority Critical patent/JP2001144334A/en
Publication of JP2001144334A publication Critical patent/JP2001144334A/en
Application status is Pending legal-status Critical

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic

Abstract

PROBLEM TO BE SOLVED: To provide an optical semiconductor device, which is almost free of a mounting failure when an LED die is mounted and a method of forming the same.
SOLUTION: An optical semiconductor device is equipped with a package 1 composed of a positive and a negative lead electrode, 2 and 3, and a molded resin 10 and an optical semiconductor die 4 provided with a positive and a negative die electrode, 5 and 6, formed on its main surface, where the semiconductor die 4 is mounted on the lead electrodes 2 and 3 through the intermediary of conductive adhesive members 7 and 8 in a flip-chip mounting manner. The package 1 is provided with a recess 9 between the lead electrodes 2 and 3, and at least the recess 9 is provided at a position making its part face the semiconductor die 4.
COPYRIGHT: (C)2001,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、各種インジケーター、ディスプレイ、光プリンターの書き込み光源及び液晶のバックライト等に利用可能な光半導体ダイを用いた光半導体装置に関し、特に、LEDダイがフリップチップ実装された光半導体装置に関するものである。 TECHNICAL FIELD The present invention relates to various indicators, displays, relates to an optical semiconductor device using the optical semiconductor die available writing light source and the liquid crystal backlight light such as a printer, in particular, LED die flip-chip mounted It has been to an optical semiconductor device.

【0002】 [0002]

【従来の技術】今日、LEDダイを用いた光半導体装置が、種々の光源として広く利用されている。 Nowadays, optical semiconductor device using the LED die, are widely used as various light sources. LEDダイは小型で効率が良く、鮮やかな色の発光をする。 LED die may have a compact efficient, the emission of bright colors. また、 Also,
低消費電力であるほか、半導体発光素子であるので玉切れなどの心配がない。 In addition to low power consumption, there is no worry about, such as ball out because it is a semiconductor light-emitting element. さらに、初期駆動特性が優れ、振動やON/OFF点灯の繰り返しに強いという特性を有していることから、今後更に広く用いられるものと考えられる。 Furthermore, the initial drive characteristics excellent, since it has strong that characteristic repetition of vibration and ON / OFF lighting believed to be used more widely in the future. LEDダイは約300μm角程度と極めて小さいものであり、通常、リード電極に接続された後、樹脂で封止されて用いられるが、最近では、外部との導通が可能なリード電極が埋め込まれたパッケージ内部にLE LED dies are those extremely small as about 300μm square, usually after being connected to the lead electrode, but used are sealed with resin, more recently, has been embedded can lead electrode conduction with the outside the inside of the package to LE
Dダイを配置させた光半導体装置が多く使用されるようになってきている。 D die an optical semiconductor device which is disposed has come to be widely used.

【0003】そのような光半導体装置の一般的な構造は、LEDダイを収納することが可能な大きさの凹部を有するパッケージと、そのパッケージに埋め込まれたリード電極とを有しており、そのリード電極は、LEDダイと接続するために、凹部の底面で一部が露出されている。 [0003] The general structure of such an optical semiconductor device has a package having a size recess capable of housing the LED die, the lead electrodes embedded in the package, the lead electrode, in order to connect the LED die are partially exposed at the bottom surface of the recess.

【0004】このように作製されたパッケージに、LE [0004] Preparation packages thus, LE
Dダイをダイボンド樹脂等で固定して、露出されたリード電極とLEDダイの電極とを、例えば金属ワイヤによって接続した後、LEDダイを保護するために透明性エポキシ樹脂で被覆することにより、光半導体装置が作製される。 Securing the D die at die bonding resin or the like, and exposed lead electrode and the LED die electrode, for example, after connecting the metal wires, by coating with a transparent epoxy resin in order to protect the LED die, light the semiconductor device is manufactured. こうして作製された光半導体装置は、他ののチップタイプ部品と同様の方法で表面実装される。 Thus fabricated optical semiconductor device is surface-mounted in the same manner as the other of the chip type part. リード電極を介して電流が供給されるとLEDダイが発光し、 LED die emits light when current is supplied through the lead electrodes,
発光された光はLEDダイから直接又は凹部の側面で反射してパッケージの外部へ放出される。 The emitted light is emitted and reflected by the side surface of the direct or recess from the LED die to the outside of the package.

【0005】近年、LEDダイが様々な用途に使われるようになるにつれ、ダイ・ボンディングの方法も多様化し、電気的接続や取り扱いを容易にするために様々な工夫がなされている。 Recently, as the LED die is to be used for various applications, and also various methods of die bonding, electrical connections and various devices for ease of handling have been made. そのなかで、一方の主面側に正負の電極(ダイ電極)が形成されたLEDダイを、その電極形成面を下にして、パッケージに形成された正負のリード電極上に設置し、それぞれの電極の接合には、接着剤として例えばはんだのような導電性の部材を用いて導通するようになされた、いわゆるフリップチップ実装タイプのものは、ワイヤ・ボンディングが不要であるため、 Among them, the LED die positive and negative electrodes (dies electrode) is formed on a principal plane, the electrode forming side down, was placed on the positive and negative lead electrodes formed on the package, respectively because the bonding of the electrodes was made to conduct with the conductive member such as solder as an adhesive, the so-called flip-chip mounting type, wire bonding is not required,
断線等の問題が生じず、取り扱いが容易である。 Problem does not occur, such as breakage, it is easy to handle.

【0006】 [0006]

【発明が解決しようとする課題】しかしながら、LED The object of the invention is to, however, LED
ダイを実装する際にその搭載位置がズレる場合がある。 Its mounting position when mounting die in some cases deviate.
これは、LEDダイの大きさが約300μmと極めて小さいために起こる問題で、LEDダイ搭載機の精度を上げるにも現時点では限度がある。 This is the size of the LED die is a problem that occurs for small as about 300 [mu] m, there is a limit at present to increase the accuracy of the LED die mounting machine. LEDダイの搭載位置がずれると、ショート不良を起こしたり、また、リード電極とダイ電極が接合しなかったりする不良を起こす原因になる。 When the mounting position of the LED die is shifted, or cause short circuits, also causes causing defects lead electrode and the die electrode or not joined. ここで、ワイヤ・ボンディングタイプの光半導体装置は、LEDダイ搭載位置のズレを補正することができるという利点があるが、工程に要する時間を考慮に入れると、やはりフリップチップ実装タイプのものが望ましい。 Here, the wire bonding type optical semiconductor device has the advantage that it is possible to correct the deviation of the LED die mounting position, but taking into account the time required for the process, it is desirable also that of the flip chip mounting type .

【0007】フリップチップ実装タイプの光半導体装置で、ダイ電極とリード電極を確実に接合させるために、 [0007] In the flip chip mounting type optical semiconductor device, in order to reliably bond the die electrode and the lead electrode,
パッケージにダイ電極が嵌入できるような凹部を設け、 A recess that can fit the die electrode provided on the package,
この凹部内にリード電極を形成させる等の方法を用いれば、LEDダイを正確にかつ確実に所定の位置に搭載することができる。 Using the method such as to form a lead electrode in the recess, it is possible to mount the LED die accurately and reliably place. しかし、この方法では、ダイ電極とパッケージ凹部の位置がその形成時点でズレていた場合には、接合時に補正することは不可能であるので、LED However, in this method, when the position of the die electrode and the package recess was shifted in its formation time, it is impossible to correct at the time of joining, LED
ダイ搭載位置を嵌合により決めてしまう方法は、結局不良を減らすことはできない。 How it would determined by fitting the die mounting position can not eventually reduce defects.

【0008】そこで、上記のようにリード電極をLED [0008] Therefore, LED lead electrodes as described above
ダイ実装面を窪ませた凹部内に形成させるのでなく、L Rather than forming in a recess recessed die mounting surface, L
EDダイ実装面と同一面上にリード電極を形成させ、このリード電極上にLEDダイをフリップチップ実装させるタイプのものを考えてみる。 ED die mounting surface to form a lead electrode on the same plane, consider what the LED die onto the lead electrode of a type that flip-chip mounting. パッケージとしては、成形樹脂とリード電極とを一体成形してなる形式のものが成形が容易であり、後で形成させる工程を設ける必要がないので、時間的にも短縮でき好都合であるので、よく用いられている。 The package of the type formed by integrally molding a molding resin and the lead electrode are easily molded, since it is not necessary to provide a step of forming later, since it is convenient can be shortened in time and, often It has been used. しかし、通常この一体成形の方法は、 However, conventional methods of this integral molding,
パッケージ成形時に金型内にリード電極となる金属片を設置し、そこに溶融した成形樹脂を充填するだけなので、リード電極の位置は固定されていない。 The metal piece to be the lead electrode into a die installed at the package molding, since only filling therein molten molding resin, the position of the lead electrode is not fixed. リード電極は金属片なので、大きくは変形しないものの、成形樹脂充填時にその充填圧等により位置がズレてしまい、正極と負極の間の間隔にはバラツキが生じてしまう。 The lead electrode metal piece, largely but not deformed, deviated positions by the filling pressure and the like during the molding resin filling, there arises a variation in the spacing between the positive electrode and the negative electrode. このバラツキもLEDダイ搭載時にカバーしなければならず、 This variation must also be covered at the time of the LED die mounted,
LEDダイ搭載機にはやはり極めて高精度なものが必要であった。 Again it was necessary extremely high precision to the LED die mounting machine.

【0009】さらにこのタイプの場合、たとえリード電極上にLEDダイが正確に配置されたとしても、接合時に均等な押力が加わらなかったり、あるいは導電性接着部材の量が正極側と負極側とで違っていたりすると、L [0009] Further, in the case of this type, even if the if the LED die on the lead electrodes are accurately positioned, the amount of or not applied is equal pushing force during bonding, or conductive adhesive member positive side and the negative side and you happen to differ in, L
EDダイが動いて所定の位置からズレてしまう。 ED die is moved deviates from a predetermined position. このような場合、隣接する電極にまで導電性接着部材が広がり、ショート不良を起こすという問題が起こるので、実装作業には細心の注意が必要であった。 In such a case, it spreads conductive adhesive member to the adjacent electrodes, so a problem that causes a short circuit failure occurs, the mounting operation was necessary care.

【0010】そこで、本発明は、フリップチップ実装型の光半導体装置において、LEDダイ実装時の不良が生じにくい光半導体装置及びその形成方法を提供することを目的とする。 [0010] Therefore, the present invention provides a flip-chip-mounted optical semiconductor device, and an object thereof is poor at the time of LED die mounted to provide a hard optical semiconductor device and a method of forming occur.

【0011】 [0011]

【課題を解決するための手段】即ち、本発明に係る光半導体装置は、正及び負のリード電極と成形樹脂とから形成されてなるパッケージと、正及び負のダイ電極が一つの主面側に共に形成されてなる光半導体ダイとを備え、 Means for Solving the Problems That is, the optical semiconductor device according to the present invention comprises a package comprising formed from the positive and negative lead electrodes and the molding resin, the positive and negative dies electrodes one main surface and an optical semiconductor die both of which formed,
該光半導体ダイが導電性接着部材を介して上記リード電極上にフリップチップ実装された光半導体装置であって、上記パッケージは、上記リード電極の正極と負極の間に凹部を有し、該凹部の少なくとも一部が上記光半導体ダイと対向する位置に形成されていることを特徴とする。 An optical semiconductor device is flip-chip mounted on the lead electrodes through the optical semiconductor die conductive adhesive member, the package has a recess between the positive electrode and the negative electrode of the lead electrode, the recess At least a portion of the is characterized in that it is formed at a position opposite to the optical semiconductor die. このように構成することにより、LEDダイを実装する際に、導電性接着部材パッケージ成形時に生じたリード電極の位置ズレや、LEDダイ搭載時に不均等な押圧が掛かって生じたLEDダイの位置ズレにともなう導電性接着部材のはみ出しによる電極間のショート不良を防ぐことができる。 With this configuration, when mounting the LED die, the position deviation and the lead electrode that occurred during the conductive adhesive member package molding, misalignment of the LED die caused by uneven pressed applied during LED die mounted it is possible to prevent short circuit between the electrodes failure due extrusion of the conductive adhesive member associated with.

【0012】また、本発明に係る光半導体装置では、上記光半導体ダイは、透光性の封止部材で覆うことができる。 [0012] In the optical semiconductor device according to the present invention, the optical semiconductor die may be covered with a sealing member of translucent.

【0013】さらに、本発明に係る光半導体装置では、 Furthermore, in the optical semiconductor device according to the present invention,
上記パッケージの成形樹脂は、液晶ポリマー樹脂、ポリブチレンテレフタレート樹脂、及びセラミックスからなる群から選択される1つを用いて構成することができる。 Molding resin of the package is a liquid crystal polymer resin, it can be configured using a polybutylene terephthalate resin, and the one selected from the group consisting of ceramics.

【0014】またさらに、本発明に係る光半導体装置では、上記凹部は、その底部において、凹部底面を正極側と負極側とに分断する遮断壁が形成されていてもよい。 [0014] Furthermore, in the optical semiconductor device according to the present invention, the recess in its bottom may be formed blocking wall that divides the bottom surface of the recess to the positive side and the negative electrode side.

【0015】また、本発明に係る光半導体装置の形成方法は、金型に成形上型と正及び負のリード電極とを設置し、該金型中に成形樹脂を射出してパッケージを一体形成し、正及び負のダイ電極が一つの主面側に共に形成されてなる光半導体ダイを、導電性接着部材を介して上記リード電極上にフリップチップ実装する光半導体装置の形成方法であって、上記一体成形は、成形上型として、 [0015] The formation method of the optical semiconductor device according to the present invention has established the upper die and the positive and negative lead electrodes in a mold, integrally form the package by injection molding resin into the mold and, an optical semiconductor die positive and negative die electrode is formed together into one main surface, through the conductive adhesive member to a forming method of the optical semiconductor device is flip-chip mounted on the lead electrode the integrally formed, as upper mold,
パッケージに凹部を形成可能な突起を有した突起付成形上型を用いて行われ、該突起は、リード電極の正極と負極の間と対向し、かつ少なくとも一部が光半導体ダイが実装される位置と対向していることを特徴とする。 Performed using the upper die with projections having a formable projections recesses in the package, 該Tokki faces the between the positive electrode and the negative electrode, and at least a part of the optical semiconductor die is mounted in the lead electrodes and it is located facing. このように形成させることにより、リード電極の正極と負極の間に、導電性接着部材が広がっていくことができる凹部を、パッケージ成形時に同時に形成させることができる。 By thus forming, between the positive electrode and the negative electrode of the lead electrode, the recess may be conductive adhesive member spreads, it can be simultaneously formed during package molding. また、成形上型の突起にリード電極を突き当てながら成形することで成形樹脂充填時にリード電極の位置が対極側にずれてショート不良を起こすこと、及びリード電極が前記とは逆方向にズレて電極間隙間が広がることを防ぐことができる。 Further, the molding position of the resin when filling the lead electrodes may cause short circuits shifted to the counter electrode side, and the lead electrode is the shifted in opposite directions by molding while abutting the lead electrode to the upper die projection it is possible to prevent the inter-electrode gap widens.

【0016】 [0016]

【発明の実施の形態】以下、図面を参照して本発明に係る実施の形態のチップタイプ光半導体装置について説明する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, will be described chip type optical semiconductor device according to a preferred embodiment of the present invention with reference to the drawings. 本発明の光半導体装置は、図1に示すように、パッケージ1に正及び負のリード電極2、3が設けられ、 The optical semiconductor device of the present invention, as shown in FIG. 1, the positive and negative lead electrodes 2, 3 provided in the package 1,
その上にLEDダイ4がフリップチップ実装されている。 LED die 4 is flip-chip mounted thereon. ダイ電極7、8は導電性接着部材7、8によってリード電極2、3と導通するようになっている。 Die electrodes 7 and 8 is adapted to conduct the lead electrodes 2 and 3 by the conductive adhesive members 7 and 8. ここで、 here,
本発明の実施の形態の光半導体装置においては、正のリード電極2と負のリード電極3の間に凹部9を有し、該凹部の少なくとも一部がLEDダイ4と対向する位置に形成されている。 In the optical semiconductor device of the embodiment of the present invention, a positive a recess 9 between the lead electrode 2 and the negative lead electrode 3, formed on at least a portion is opposed to the LED die 4 position of the recess ing. これによって、本実施の形態の光半導体装置は、LEDダイ4実装時に接着剤及びLEDダイとリード電極間の電気的導通を得るために用いる導電性接着部材7、8が、LEDダイ4実装時に押圧されて広がっていく際に容量の大きな凹部9内に導入されていくので、ショート不良を防ぐことができるものである。 Thereby, the optical semiconductor device of this embodiment, the conductive adhesive members 7 used to obtain electrical conduction between the adhesive and the LED die and the lead electrode during LED die 4 implementation, during LED die 4 mounted since we are introduced into a large recess 9 of capacity when spreads were pressed, it is capable of preventing short circuits.

【0017】以下、本実施の形態の光半導体装置の各構成について詳述する。 [0017] Hereinafter, will be described in detail each constituent of the optical semiconductor device of the present embodiment. 尚、図1は本実施の形態の光半導体装置の模式的平面図であり、図2は図1のX−X'線についての模式的断面図であり、図3及び図4は本実施の一実施例を示す光半導体装置の模式的断面図である。 Incidentally, FIG. 1 is a schematic plan view of an optical semiconductor device of this embodiment, FIG. 2 is a schematic cross-sectional view of line X-X 'in FIG. 1, 3 and 4 of the present it is a schematic cross-sectional view of an optical semiconductor device according to an embodiment.
また、図5は、本実施の形態の光半導体装置の形成方法を説明するための模式的断面図であり、図6は図5と比較するための、従来の光半導体装置の形成方法を説明するための模式的断面図である。 Further, FIG. 5 is a schematic sectional view for explaining a method of forming an optical semiconductor device of the present embodiment, for comparison 6 and FIG. 5, a conventional method of forming an optical semiconductor device described it is a schematic cross-sectional views for.

【0018】(パッケージ1)パッケージ1は、成形樹脂として、液晶ポリマーやポリブチレンテレフタレート(PBT)樹脂、ポリアミド樹脂、ABS樹脂、メラミン樹脂等の絶縁性支持部材を用いることができる。 [0018] (package 1) package 1, as a molding resin, liquid crystal polymer and polybutylene terephthalate (PBT) resin, a polyamide resin, ABS resin, it is possible to use an insulating support member such as a melamine resin. 図5 Figure 5
に示す金型16内に成形上型14及び正負のリード電極2、3を所定の位置に設置し、更に成形上型14を設置した後、下方すなわち符号Aを付して示す矢印の方向から溶融した成形樹脂10を射出することにより作製される。 The upper mold 14 and the positive and negative lead electrodes 2 and 3 was set at a predetermined position in the mold 16 shown in, after further installed upper die 14, in the direction of the arrow shown are designated by the lower or sign A the molten molding resin 10 is manufactured by injection. 金型16内に射出された溶融成形樹脂10は、冷却後金型16から取り出され、成形上型14を取り外すことによってリード電極2、3がそれぞれ所定の形状に加工されたパッケージ1となる。 Melt molding resin 10 that is injected into the mold 16 is removed from the cooled mold after 16, the lead electrodes 2 and 3 by detaching the upper die 14 becomes a package 1 that has been processed into a predetermined shape.

【0019】本実施の形態において、パッケージ1は、 [0019] In this embodiment, package 1,
リード電極の正極2と負極3の間に凹部を有し、この凹部の少なくとも一部はLEDダイと対向する位置に形成されている。 A recess between the positive electrode 2 and negative electrode 3 of the lead electrodes, at least a portion of the recess is formed in a position opposed to the LED die. このことにより、LEDダイ実装時に接着剤として用いられる導電性接着部材7、8が押圧されて広がった場合に起こるショート不良を防ぐことが可能となる。 Thus, the conductive adhesive members 7 and 8 for use as an adhesive when the LED die mounting it is possible to prevent a defect short circuit occurs when the spread is pressed. 正極2と負極3の間に十分な間隔をとれば、ショート不良を防ぐことはできるが、それではパッケージを大きくするなどの対策が必要であり、光半導体装置を小型化できなくなってしまうのに対し、本発明の実施の形態のごとき凹部9を、正負のリード電極間に設けることで、容易にショート不良を防ぐことができる。 Taking sufficient spacing between the positive electrode 2 and negative electrode 3, although it is possible to prevent a short circuit, So it is necessary to take measures such as increasing the package, the optical semiconductor device while it becomes impossible to miniaturize the recess 9, such as the embodiment of the present invention, by providing between the positive and negative lead electrodes, can be prevented easily short-circuit defect.

【0020】凹部9は、リード電極の正極2と負極3の間で、少なくとも一部がLEDダイと対向する位置に形成されるが、さらに言えば、LEDダイ4の中央部と凹部9の中央部が重なるような位置に形成されることが好ましい。 The recess 9, between the positive electrode 2 and negative electrode 3 of the lead electrodes, at least a portion is formed at a position facing the LED dies and, more, central middle portion and the concave portion 9 of the LED die 4 it is preferred that part is formed at a position overlapping. このように構成されることで、正極側から広がってきた導電性接着部材と、負極側から広がってきた導電性接着部材は、同じようにLEDダイの中心方向に向かうので、LEDダイがズレにくくなる。 By such a configuration, and has spread from the positive electrode side conductive adhesive member, a conductive adhesive member that has spread from the negative electrode side, since the same manner towards the center of the LED die, the LED die is not easily displaced Become. 凹部9のすべてがLEDダイと対向していない、つまり、凹部とLE All of the recesses 9 are not opposed to the LED die, i.e., concave portions and LE
Dダイの中心部がずれていても、そのうちの一部が対向していれば、導電性接着部材は、凹部内に広がっていくことができるので、ショート不良を防ぐことができる。 Be offset is the heart of the D die long as a part of which faces the conductive adhesive member, it is possible to spread in the recess, it is possible to prevent short circuits.

【0021】また、凹部9は、正極2側及び負極3側から広がった導電性接着部材7、8がくっつかないような形状及び大きさでなければならないので、好ましくは、 Further, the recess 9, so must be shaped and sized to conductive adhesive members 7 and 8 spread from the cathode 2 side and the anode 3 side from sticking, preferably,
図2のごときパッケージ表面に対してほぼ垂直な角度に形成された側面と、パッケージ表面とほぼ水平な角度に形成された底面とを有する形状で、かつ、その容量は導電性接着部材の容積よりも大きく形成させるのがよい。 Shape has a side surface formed in a substantially perpendicular angle to the package surface, such as in FIG. 2, and a bottom surface which is formed in a substantially horizontal angle between the package surface and, from the volume of the volume conductive adhesive member it is preferable also to larger.
また、図3のように凹部内で導電性接着部材7、8がショート不良を起こさないように、凹部底部を正極側と負極側に分断するような遮断壁11を形成させてもよい。 Further, as the conductive adhesive members 7 and 8 in the recess as shown in FIG. 3 does not cause a short circuit, it may be formed a barrier wall 11 so as to divide the recess bottom to the positive and negative sides.
遮断壁11を図4のように高くして正負のリード電極間に2つの凹部12、13が形成された形態にしてもよい。 The blocking wall 11 may be raised two recesses 12 and 13 between the positive and negative lead electrodes are formed by the form as shown in FIG. 凹部9内に遮断壁11を形成させることにより、導電性接着部材の広がりを凹部内部においても確実に遮断でき、ショート不良を更に確実に防ぐことができる。 By forming a barrier wall 11 in the recess 9, the spread of the conductive adhesive member is also possible to reliably blocked inside the recess, it is possible to prevent short circuits more reliably. 凹部の側面が傾斜を持っている場合、極端には底面を有しないような錐状であった場合は、かえって導電性接着部材が凹部側面を滑って広がりやすくなり、ショート不良を起こし易くなってしまうので好ましくないが、上記のように遮断壁11を形成させておけば、ショート不良を防ぐことができる。 If the side surface of the concave portion has an inclination, if extreme was cone which does not have a bottom, and rather conductive adhesive member is likely spread slipped recess side, it is susceptible to short-circuit failure Although not preferred since put away, if to form a blocking wall 11, as described above, it is possible to prevent short circuits. 要は、押圧された導電性接着部材の広がり先(空間)を対極との間もしくは周辺に確保し、 In short, to ensure spreading destination the pressed conductive adhesive member (space) around or between the counter electrode,
この凹部内で導電性接着部材がショートしにくい形状に形成させておけばよい。 Conductive adhesive member within this recess it is sufficient to form a short difficult shape. 凹部の形状は、凹部形成方法に応じて都合のよい形状に形成させればよい。 The shape of the recess, it is sufficient to form a good shape convenient depending on recess formation method.

【0022】また、上記光半導体ダイは、例えば図5に示すように透光性の封止部材14で覆われていてもよい。 Further, the optical semiconductor die, for example, may be covered with a sealing member 14 of the translucent as shown in FIG. 封止部材の具体的な材料としては、主としてエポキシ樹脂、ユリア樹脂等の耐候性に優れた透光性樹脂が好適に用いられる。 As a specific material of the sealing member, epoxy resin, weather resistance excellent translucent resin of urea resin or the like is preferably used mainly. このように構成することで、外部から保護することができる。 With this configuration, it can be protected from the outside. また、パッケージに設けられたリード電極2、3は、銅板、リン青銅板、鉄板等の電気良導体金属板から形成することができる。 The lead electrodes 2 and 3 provided on the package can be formed copper plate, phosphor bronze plate, an electrically good conductor metal plate such as an iron plate. リード電極2、3は、上記パッケージ1の表面に、その一部が露出するように成形され、LEDダイ4と導通可能となっている。 Lead electrodes 2 and 3, the surface of the package 1 is shaped so as partially to expose, and can conduct an LED die 4.

【0023】(成形上型15)本実施の形態においては、上記パッケージ1成形時の成形上型として、電極間に凹部9を形成できるような突起16が設けられた突起付成形上型15を用いることが好ましい。 [0023] In the form of (upper die 15) present embodiment, as the upper die when the package 1 forming the projections with the upper die 15 which protrusion 16 is provided such as to form a recess 9 between the electrodes it is preferably used. このような突起付成形上型15を用い、矢印Aで示すように成形樹脂を射出することによって、リード電極の正極と負極の間の凹部9を、パッケージ1成形と同時に形成させることができる。 Using such molding upper die 15 with the projections, by injection molding resin as indicated by the arrow A, the recesses 9 between the positive electrode and the negative electrode of the lead electrode may be formed package 1 formed at the same time. もちろん、凹部9は、パッケージ1成形後に削り取る等の方法で形成させてもなんら問題はないが、 Of course, the recess 9 is not any problem even if formed by a method such as scraping after package 1 formed,
突起付成形上型15を用いることで、凹部形成工程を別に設ける必要もなく、手間が省ける。 By using the upper die 15 with the projections, it is unnecessary to provide a separate pit formation step, labor can be saved.

【0024】更に、この突起16があることで、パッケージ1成形時のリード電極2、3のズレをも防ぐことができる。 Furthermore, since this projection 16 there can also be prevented a deviation of the lead electrodes 2, 3 of the package 1 during molding. 図7のような突起のない成形上型18を用いてパッケージを一体成形する場合、リード電極2、3は金属なので、形が崩れるようなことはまずないものの、溶融した成形樹脂10が金型17内に矢印Aで示されるように射出される際の圧力で、多少は変形する。 When integrally forming the package by using the upper die 18 projecting free as shown in FIG. 7, the lead electrodes 2 and 3 metals, although such seldom as collapse form, the molding resin 10 molds the molten at a pressure as it is emitted as indicated by the arrow a in 17, somewhat deformed. そのため、リード電極の正極2と負極3間の間隔にバラツキが生じる。 Therefore, variations in the distance between the cathode 2 and the anode 3 of the lead electrode. 場合によっては、極端に間隔が狭くなりこともあり、ショート不良を起こし易くなる。 In some cases, extremely sometimes spacing is narrowed, becomes susceptible to short circuit. 本実施の形態のような突起付成形上型15を用いることで、パッケージ1に凹部9を形成させると共に、電極間に突き出た突起がリード電極2、3を固定し、電極間に一定の間隔を設ける働きをするので、LEDダイ実装時の不良も起こりにくく、安定して光半導体装置を形成することができる。 By using the with projection upper die 15 as in this embodiment, the forming a concave portion 9 to the package 1, the projection protruding between the electrodes to secure the lead electrodes 2 and 3, a constant between electrode spacing since functions to provide a, LED die failure even less likely to occur during mounting, it is possible to stably form an optical semiconductor device.

【0025】本実施の形態の突起付成形上型15を用いて一体成形する場合、突起16の形状が、成形上型を取り外す際に都合の良い形状にしておくことが好ましい。 In the case of integrally molded using projections with the upper die 15 of the present embodiment, the shape of the protrusions 16, it is preferable to the convenient shape when removing the upper mold.
さらに前述したように、凹部の側面が傾斜を有し、傾斜を利用して導電性接着部材が対極側に広がるのを加速するようでは意味がないので、パッケージ表面とほぼ垂直な角度を持った壁面と、パッケージ表面とほぼ水平な角度を持った面を突起部の先端に有することが好ましい。 Further, as described above, the side surface of the recess has an inclined, since the conductive adhesive member by use of the inclination is meaningless appears to accelerate the spread side of the counter electrode, with a substantially perpendicular angle with the package surface it is preferred to have a wall surface, a surface having a substantially horizontal angle between the package surface to the tip of the protrusion.
あるいは、凹部9の底面を正極側と負極側に分断するような遮断壁が形成されるような形状の突起にすることもできる。 Alternatively, it is also possible to projections shaped like the blocking wall so as to divide the bottom surface of the recess 9 in the positive electrode side and negative electrode side is formed. 遮断壁が形成去れるならば、凹部の壁面は傾斜を有していても問題はない。 If the blocking wall is formed, the wall surface of the recess is no problem even if a slope.

【0026】(LEDダイ4)本実施の形態において、 [0026] In the form of (LED die 4) present,
LEDダイ4は一方の主面に正電極5と負電極6とがいずれも形成されている光半導体素子であって、パッケージ1に設けられたリード電極2、3上に、フリップチップ実装される。 LED die 4 is an optical semiconductor device and the positive electrode 5 on one main surface and a negative electrode 6 are both formed, on the lead electrodes 2 and 3 provided on the package 1, is flip-chip mounted .

【0027】 [0027]

【発明の効果】本発明は、リード電極がショート不良を起こすのを防ぐことができ、信頼性の高い光半導体装置を提供することができる。 According to the present invention, it is possible to prevent the lead electrodes that cause a short circuit, it is possible to provide a highly reliable optical semiconductor device.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明に係る実施の形態の光半導体装置の模式的平面図である。 1 is a schematic plan view of an optical semiconductor device of the embodiment according to the present invention.

【図2】図1のX−X'線についての模式的断面図である。 2 is a schematic cross-sectional view of line X-X 'in FIG.

【図3】本発明の一実施例を示す模式的断面図である。 Figure 3 is a schematic sectional view showing an embodiment of the present invention.

【図4】本発明の一実施例を示す模式的断面図である。 4 is a schematic sectional view showing an embodiment of the present invention.

【図5】本発明の第2の実施の形態を示す模式的断面図である。 5 is a schematic sectional view showing a second embodiment of the present invention.

【図6】本発明の実施の形態の光半導体装置の形成方法を説明する模式的断面図である。 6 is a schematic sectional view for explaining a method of the optical semiconductor device of the embodiment of the present invention.

【図7】本発明の実施の形態の光半導体装置の形成方法を説明する模式的断面図である。 7 is a schematic sectional view for explaining a method of the optical semiconductor device of the embodiment of the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

1・・・・パッケージ 2・・・・リード電極(正極) 3・・・・リード電極(負極) 4・・・・LEDダイ 5・・・・LEDダイ電極(正極) 6・・・・LEDダイ電極(負極) 7、8・・・・導電性接着部材 9・・・・凹部 10・・・・成形樹脂 11・・・・凹部内遮断壁 12、13・・・・凹部 14・・・・透光性封止部材 15・・・・突起付成形上型 16・・・・突起 17・・・・金型 18・・・・成形上型 1 ... package 2 .... lead electrode (cathode) 3 ... lead electrode (negative electrode) 4 ... LED die 5 ... LED die electrode (positive electrode) 6 ... LED die electrode (negative electrode) 7,8 ... conductive bonding member 9 ... recess 10 ... molding resin 11 .... recess blocking walls 12,13 ... recess 14 ... - translucent sealing member 15 ... with projections upper die 16 ... projection 17 ... die 18 ... upper mold

Claims (5)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 正及び負のリード電極と成形樹脂とから形成されてなるパッケージと、正及び負のダイ電極が一つの主面側に共に形成されてなる光半導体ダイとを備え、該光半導体ダイが導電性接着部材を介して上記リード電極上にフリップチップ実装された光半導体装置であって、 上記パッケージは、上記リード電極の正極と負極の間に凹部を有し、該凹部の少なくとも一部が上記光半導体ダイと対向する位置に形成されていることを特徴とする光半導体装置。 With a 1. A positive and negative lead electrodes and the package made formed from a molded resin, a positive and an optical semiconductor die negative die electrode is formed together into one main surface side, light an optical semiconductor device is flip-chip mounted on the lead electrodes through the semiconductor die conductive adhesive member, the package has a recess between the positive electrode and the negative electrode of the lead electrodes, at least of the recess some optical semiconductor device characterized by being formed at a position opposite to the optical semiconductor die.
  2. 【請求項2】 上記光半導体ダイは、透光性の封止部材で覆われている請求項1記載の光半導体装置。 Wherein said optical semiconductor die, the optical semiconductor device according to claim 1, wherein are covered with a sealing member of translucent.
  3. 【請求項3】 上記パッケージの成形樹脂は、液晶ポリマー樹脂、ポリブチレンテレフタレート樹脂、及びセラミックスからなる群から選択される1つからなる請求項1記載の光半導体装置。 3. A molding resin of the package is a liquid crystal polymer resin, polybutylene terephthalate resin, and an optical semiconductor device according to claim 1, wherein comprises one selected from the group consisting of ceramics.
  4. 【請求項4】 上記凹部は、その底部において、凹部底面を正極側と負極側とに分断する遮断壁が形成されている請求項1記載の光半導体装置。 Wherein said recess has at its bottom, an optical semiconductor device according to claim 1, wherein the blocking wall that divides the bottom surface of the recess to the positive side and the negative electrode side is formed.
  5. 【請求項5】 金型に成形上型と正及び負のリード電極とを設置し、該金型中に成形樹脂を射出してパッケージを一体形成し、正及び負のダイ電極が一つの主面側に共に形成されてなる光半導体ダイを、導電性接着部材を介して上記リード電極上にフリップチップ実装する光半導体装置の形成方法であって、 上記一体成形は、成形上型として、パッケージに凹部を形成可能な突起を有した突起付成形上型を用いて行われ、該突起は、リード電極の正極と負極の間と対向し、 5. Install the upper die and the positive and negative lead electrodes in a mold, integrally form the package by injection molding resin into the mold, the main positive and negative dies electrodes one the optical semiconductor die together formed by forming on the side, via the conductive adhesive member to a forming method of the optical semiconductor device is flip-chip mounted on the lead electrodes, said integrally molded as the upper die, the package performed using the upper die with projections having a formable projections and recesses, 該Tokki faces the between the positive electrode and the negative electrode of the lead electrodes,
    かつ少なくとも一部が光半導体ダイが実装される位置と対向していることを特徴とする光半導体装置の形成方法。 And forming method of the optical semiconductor device characterized by being located facing at least a part of the optical semiconductor die is mounted.
JP32623699A 1999-11-17 1999-11-17 Optical semiconductor device and forming method therefor Pending JP2001144334A (en)

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US7029935B2 (en) 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7183587B2 (en) 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7906793B2 (en) 2004-10-25 2011-03-15 Cree, Inc. Solid metal block semiconductor light emitting device mounting substrates
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US9608166B2 (en) 2003-08-14 2017-03-28 Cree, Inc. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
US7029935B2 (en) 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7183587B2 (en) 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7906793B2 (en) 2004-10-25 2011-03-15 Cree, Inc. Solid metal block semiconductor light emitting device mounting substrates
US8598606B2 (en) 2004-10-25 2013-12-03 Cree, Inc. Solid metal block semiconductor light emitting device mounting substrates and packages
USRE42598E1 (en) 2004-12-23 2011-08-09 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
USRE45796E1 (en) 2004-12-23 2015-11-10 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
US8858004B2 (en) 2005-12-22 2014-10-14 Cree, Inc. Lighting device
US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US9220149B2 (en) 2006-01-20 2015-12-22 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
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