JP2001133816A - Method for forming electrically conductive film which diminishes scattered and reflected light - Google Patents
Method for forming electrically conductive film which diminishes scattered and reflected lightInfo
- Publication number
- JP2001133816A JP2001133816A JP31267099A JP31267099A JP2001133816A JP 2001133816 A JP2001133816 A JP 2001133816A JP 31267099 A JP31267099 A JP 31267099A JP 31267099 A JP31267099 A JP 31267099A JP 2001133816 A JP2001133816 A JP 2001133816A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- film
- scattered
- transparent conductive
- reflected light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、エレクトロクロミ
ックミラー、エレクトロクロミック表示素子、液晶表示
素子、太陽電池、発光素子、電界シールド等様々な機能
素子に適用されるＳｎＯ２膜やＩＴＯ膜等の透明導電膜
の散乱反射光低減構造及び方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transparent material such as an SnO 2 film or an ITO film applied to various functional devices such as an electrochromic mirror, an electrochromic display device, a liquid crystal display device, a solar cell, a light emitting device, and an electric field shield. The present invention relates to a structure and a method for reducing scattered and reflected light of a conductive film.
【０００２】[0002]
【従来の技術】エレクトロクロミックミラーや液晶表示
素子等様々な機能素子において、ＳｎＯ２膜の透明導電
膜が利用されている。ＳｎＯ２膜等の透明導電膜の表面
には、ＳｎＯ２膜等の粒子の不揃いや突起等に起因する
凹凸があり、入射した光線が光散乱（ヘイズ）を生じ
る。2. Description of the Related Art In various functional devices such as an electrochromic mirror and a liquid crystal display device, a transparent conductive film such as a SnO 2 film is used. On the surface of the transparent conductive film such as SnO 2 film, there are irregularities caused by uneven or protrusions or the like of the particles such as SnO 2 film, light incident results in a light scattering (haze).
【０００３】この透明導電膜上のヘイズは、その散乱光
により白濁が生じ、ミラーや表示素子の場合は視認性を
低める。従来、透明導電膜上のヘイズの対応は、イオン
プレーティング法やスパッタ法等、製造コストとしては
高くつくが凹凸のできにくい成膜方法を採用して対応し
たり、あるいは薄膜を何層か積層することによって対応
している。要するに、成膜時の成膜条件（方法）により
対応している。The haze on the transparent conductive film causes turbidity due to the scattered light, and in the case of a mirror or a display element, the visibility is reduced. Conventionally, the haze on the transparent conductive film has been dealt with by adopting a film forming method such as ion plating method or sputtering method which is expensive in production cost but hard to make unevenness, or laminating several thin films. By responding. In short, it corresponds by the film formation conditions (method) at the time of film formation.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
ように成膜条件にてヘイズに対応する場合、製造コスト
が高くなり、製造工程が複雑となり、手間がかかるとい
う問題があった。本発明は、多少の凹凸は発生するが、
成膜方法としては低コストで手間のかからないＣＶＤ法
を用い、しかも従来の凹凸面に起因する問題を解決する
ことを目的とするものである。要するに、簡単で手間が
かからず、低コストで、透明導電膜上の散乱光を低減さ
せる透明導電膜の構造及びその形成方法を実現すること
を課題とする。However, when the haze is controlled under the film forming conditions as in the prior art, there is a problem that the manufacturing cost is increased, the manufacturing process is complicated, and it takes time. In the present invention, although some unevenness occurs,
An object of the present invention is to use a low-cost and low-cost CVD method as a film forming method, and to solve a problem caused by a conventional uneven surface. In short, it is an object of the present invention to realize a structure of a transparent conductive film which reduces scattered light on the transparent conductive film at a low cost, which is simple, hassle-free, and a method for forming the same.
【０００５】上記のとおり、従来は導電膜の形成過程で
ヘイズ対応措置をとる発想しかなく、ガラス基板に成膜
後に研磨加工するという発想はなかった。本発明者はこ
の点に着目し、導電膜をガラス等の基板に形成してから
研磨加工してその表面に形成された成膜材料の粒子の不
揃いや突起等に起因する凹凸を除去してヘイズの低減を
図ろうという着想を得た。本発明は、この着想を実現し
ようとするものである。As described above, conventionally, there was only an idea of taking measures against haze in the process of forming a conductive film, and no idea of polishing after forming a film on a glass substrate. The present inventor paid attention to this point, and formed a conductive film on a substrate such as glass and then polished to remove irregularities or irregularities caused by irregularities or projections of the film-forming material formed on the surface. I got the idea to reduce haze. The present invention seeks to realize this idea.
【０００６】[0006]
【課題を解決するための手段】本発明は、上記課題を解
決するために、基板上に形成された透明導電膜に光が入
射した際に生じる散乱反射光を低減する散乱反射光低減
導電膜を形成する方法であって、上記基板上に上記透明
導電膜を形成し、該透明導電膜の表面を研磨加工し、上
記散乱反射光の原因である上記表面上の凹凸を除去する
ことを特徴する散乱反射光低減導電膜の形成方法を提供
する。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention provides a scattered / reflected light reducing conductive film for reducing scattered / reflected light generated when light enters a transparent conductive film formed on a substrate. Forming the transparent conductive film on the substrate, polishing the surface of the transparent conductive film, and removing irregularities on the surface that cause the scattered reflected light. The present invention provides a method for forming a scattered reflected light reducing conductive film.
【０００７】本発明は、上記課題を解決するために、基
板上に形成された透明導電膜であって、上記透明導電膜
は、上記基板上に形成された状態において、その表面が
研磨加工され上記表面上の凹凸が除去されており、上記
透明導電膜に光を入射した際に生じる散乱反射光が低減
されていることを特徴する散乱反射光低減導電膜を提供
する。According to the present invention, there is provided a transparent conductive film formed on a substrate, wherein the surface of the transparent conductive film is polished while being formed on the substrate. Provided is a scattered-reflected-light-reducing conductive film, wherein irregularities on the surface are removed, and scattered-reflected light generated when light enters the transparent conductive film is reduced.
【０００８】上記透明導電膜は、ＳｎＯ２膜又はＩＴＯ
膜等である。The transparent conductive film is made of SnO 2 film or ITO.
Film.
【０００９】上記透明導電膜は、エレクトロクロミック
素子、液晶素子、太陽電池、電界シールド又は発光素子
に適用可能である。The above-mentioned transparent conductive film is applicable to an electrochromic device, a liquid crystal device, a solar cell, an electric field shield or a light emitting device.
【００１０】上記透明導電膜は、エレクトロクロミック
素子に適用する場合は、固体形エレクトロクロミックミ
ラー又は液体型エレクトロクロミックミラーの透明導電
膜である。When the transparent conductive film is applied to an electrochromic element, it is a transparent conductive film of a solid-state electrochromic mirror or a liquid-type electrochromic mirror.
【００１１】上記研磨加工には、ＳｉＯ２の研磨粒子を
用いて、湿式研磨により、上記透明導電膜の表面に傷を
生じさせないようにする。In the above-mentioned polishing, abrasive particles of SiO 2 are used, and wet polishing is performed so as not to cause scratches on the surface of the transparent conductive film.
【００１２】[0012]
【発明の実施の形態】本発明に係る散乱反射光低減導電
膜及びその形成方法の実施の形態を実施例に基づいて図
面を参照して説明する。図１は、本発明に係る散乱反射
光低減導電膜及びその形成方法の実施例１を説明する図
であり、図１（ａ）、（ｅ）は、本発明に係る散乱反射
光低減導電膜としてＳｎＯ２膜が固体型エレクトロクロ
ミックミラーに適用された実施例を示す図であり、図１
（ｂ）、（ｃ）、（ｄ）は、本発明の特徴を説明するた
めの図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a scattered reflection light reducing conductive film and a method of forming the same according to the present invention will be described with reference to the drawings based on examples. FIG. 1 is a diagram for explaining a scattered reflection light reducing conductive film according to the present invention and Example 1 of a method for forming the same. FIGS. 1A and 1E are diagrams illustrating a scattered reflection light reducing conductive film according to the present invention. FIG. 1 is a diagram showing an example in which a SnO 2 film is applied to a solid-state electrochromic mirror as FIG.
(B), (c), (d) is a figure for demonstrating the characteristic of this invention.
【００１３】図１（ａ）において、固体型エレクトロク
ロミックミラー１は、ガラス基板２上にはＳｎＯ２膜
（酸化錫膜）３が形成されており、ＳｎＯ２膜３の上面
には固体型エレクトロクロミック層４が形成されてお
り、さらに固体型エレクトロクロミック層４の上面にＡ
ｌ反射膜５が形成されて構成されている。In FIG. 1A, a solid-state electrochromic mirror 1 has a glass substrate 2 on which a SnO 2 film (tin oxide film) 3 is formed, and a solid-state electrochromic mirror 3 on the upper surface of the SnO 2 film 3. A chromic layer 4 is formed.
1 is formed by forming a reflection film 5.
【００１４】ＳｎＯ２膜３は、ガラス基板２上にＣＶＤ
法により成膜され、固体型エレクトロクロミックミラー
１において透明電極として機能する。Ａｌ反射膜５は真
空蒸着等の方法により固体型エレクトロクロミック層４
の上面に蒸着され、反射膜兼電極として機能する。The SnO 2 film 3 is formed on the glass substrate 2 by CVD.
It functions as a transparent electrode in the solid-state electrochromic mirror 1. The Al reflective film 5 is formed on the solid-state electrochromic layer 4 by a method such as vacuum evaporation.
And functions as a reflective film and electrode.
【００１５】固体型エレクトロクロミック層４は、図示
しないが、ＳｎＯ２膜３側から順に、酸化イリジウム等
により形成された酸化発色膜、五酸化タンタル等により
形成された固体電解質膜、及び酸化タングステン等によ
り形成された還元発色膜が積層されて構成される。Although not shown, the solid-type electrochromic layer 4 includes, in order from the SnO 2 film 3 side, an oxidized coloring film formed of iridium oxide or the like, a solid electrolyte film formed of tantalum pentoxide or the like, and tungsten oxide or the like. Are formed by laminating the reduction coloring films formed by the above.
【００１６】固体型エレクトロクロミックミラー１で
は、ＳｎＯ２膜３とＡｌ反射膜５の間に電圧の印加、非
印加により、固体型エレクトロクロミック層４の還元発
色膜を着色、消色し、反射率（光量）を調整し、例え
ば、自動車用防眩ミラー等に利用される。In the solid-state electrochromic mirror 1, by applying or not applying a voltage between the SnO 2 film 3 and the Al reflecting film 5, the reduced color forming film of the solid-type electrochromic layer 4 is colored and decolored, and the reflectance is increased. (Light amount) is adjusted, and is used for, for example, an anti-glare mirror for automobiles.
【００１７】このような固体型エレクトロクロミックミ
ラーに１おいて、ＳｎＯ２膜３は、上記の通りガラス基
板２上にＣＶＤ法により成膜されるが、成膜後の膜表面
には図１（ｂ）に示すような凹凸６がある。このような
凹凸６は、ＳｎＯ２の粒子がＳｎＯ２膜３の表面に露出
するために生じるものと考えられる。このような凹凸６
があると、固体型エレクトロクロミックミラー１に入射
した光線は乱反射して散乱反射光となり、ＳｎＯ２膜３
上に白濁（ヘイズ）が生じる。In such a solid-state electrochromic mirror 1, the SnO 2 film 3 is formed on the glass substrate 2 by the CVD method as described above. There are irregularities 6 as shown in b). Such irregularities 6, particles of SnO 2 are thought to occur to expose the surface of the SnO 2 film 3. Such irregularities 6
In this case, the light incident on the solid-state electrochromic mirror 1 is irregularly reflected to be scattered and reflected, and the SnO 2 film 3
Haze occurs on the top.
【００１８】そこで、本発明では、ＳｎＯ２膜３をガラ
ス基板２上にＣＶＤ法により成膜してから、ＳｎＯ２膜
表面を機械的、物理的に研磨して、ＳｎＯ２膜表面の凹
凸６を除去し、図１（ｃ）、（ｄ）に示すような平坦面
７とする。具体的な研磨加工方法としては、研磨粒子と
してＳｉＯ２粒子を用い、しかも湿式研磨を用いること
により、表面に研磨粒子が残らず、又大きな傷が生じな
いようにした。[0018] In the present invention, the SnO 2 film 3 was deposited by CVD on the glass substrate 2, the mechanical the SnO 2 film surface, physically polishing, the SnO 2 film surface unevenness 6 Is removed to form a flat surface 7 as shown in FIGS. As a specific polishing method, SiO 2 particles were used as the polishing particles, and wet polishing was used so that no polishing particles remained on the surface and no large scratches were generated.
【００１９】このように形成されたＳｎＯ２膜３は、そ
の表面の凹凸６が研磨して除去されているから、入射光
が反射して散乱する散乱反射光を小さく抑え、ＳｎＯ２
膜３上に生じる白濁を減少させることができる。[0019] The SnO 2 film 3 formed in this way, since unevenness 6 of the surface is removed by polishing, and with minimal scattering reflected light incident light is scattered and reflected, SnO 2
The cloudiness generated on the film 3 can be reduced.
【００２０】実施例１についてより具体的な製作実験例
を、以下説明する。ＣＶＤ法によりガラス基板２にＳｎ
Ｏ２膜３を形成し、ＳｎＯ２基板（ここでは、ガラス基
板上ＳｎＯ２膜３が一体に形成されて成る基板をい
う。）を得た。このＳｎＯ２基板は、透過率が８０％、
抵抗値が１５Ω／□であった。このＳｎＯ２基板を、そ
のまま図１（ａ）に示すような固体型エレクトロクロミ
ックミラーの透明電極として適用した場合、ＳｎＯ２基
板の表面には凹凸６が形成されており（図１（ｂ）参
照）、入射光が散乱し、ヘイズが生じ、即ちこの散乱反
射光によりＳｎＯ２基板の表面が白濁してしまい、鏡と
しての機能を果たさなくなる。A more specific example of a production experiment for the first embodiment will be described below. Sn on glass substrate 2 by CVD method
An O 2 film 3 was formed to obtain a SnO 2 substrate (here, a substrate in which the SnO 2 film 3 was integrally formed on a glass substrate). This SnO 2 substrate has a transmittance of 80%,
The resistance value was 15Ω / □. When this SnO 2 substrate is used as it is as a transparent electrode of a solid-state electrochromic mirror as shown in FIG. 1A, irregularities 6 are formed on the surface of the SnO 2 substrate (see FIG. 1B). ), The incident light is scattered and haze is generated, that is, the scattered reflected light makes the surface of the SnO 2 substrate cloudy, and does not function as a mirror.
【００２１】そこで、このＳｎＯ２基板を、粒径１μｍ
以下のシリカ粒子を研磨粒子として、シリコン用仕上げ
パットを用い、研磨圧２０ｇ／ｃｍ２以上で１０分以上
研磨を行い、図１（ｂ）のようなＳｎＯ２基板の表面の
凹凸６を、図１（ｃ）に示すように除去し平坦面７とし
た。このようにして研磨加工後のＳｎＯ２基板は、その
表面に散乱反射光が生じることなく、従って白濁するこ
となく、非常にクリアな透明基板である。ＳｎＯ２基板
の鏡面が得られた。なお、研磨面を図１（ｃ）に示すよ
うに完全に平坦にしなくても、図１（ｄ）に示すよう
に、凹凸６を形成する凸部のピークを研磨加工して平坦
面７’にしただけでもヘイズをかなり取り除くことがで
きる。Therefore, this SnO 2 substrate is made to have a particle size of 1 μm.
Using the following silica particles as abrasive particles, polishing is performed for at least 10 minutes at a polishing pressure of 20 g / cm 2 or more using a finishing pad for silicon, and unevenness 6 on the surface of the SnO 2 substrate as shown in FIG. It was removed as shown in FIG. Thus, the polished SnO 2 substrate is a very clear transparent substrate with no scattered reflected light on its surface and therefore no cloudiness. A mirror surface of the SnO 2 substrate was obtained. Note that, even if the polished surface is not completely flat as shown in FIG. 1C, as shown in FIG. The haze alone can remove a lot of haze.
【００２２】このようにして得られたＳｎＯ２基板を用
いて、図１（ａ）に示す固体型エレクトロクロミックミ
ラーを作製した場合、外観上、散乱反射光白濁が生じる
ことなく、反射率８〜７０％の可変反射率ミラーを得る
ことができた。さらに、高温放置試験、作動サイクルテ
スト等の様々な耐久テストを行った結果、十分な耐久性
を有することが確認できた。When the solid-state electrochromic mirror shown in FIG. 1A is manufactured using the thus obtained SnO 2 substrate, the reflectance is 8 to 10 without appearance of scattered reflected light and opacity. A 70% variable reflectance mirror was obtained. Furthermore, as a result of performing various durability tests such as a high-temperature storage test and an operation cycle test, it was confirmed that the battery had sufficient durability.
【００２３】さらに、このようにして得られたＳｎＯ２
基板を用いて、６５０℃にて１４００Ｒの曲げを行い、
図１（ｅ）に示すような湾曲タイプの固体型エレクトロ
クロミックミラー８を作製した。この固体型エレクトロ
クロミックミラー８の反射率は、エレクトロクロミック
層４を印加、非印加して着色、消色することにより、８
〜７０％となり、本発明に係るＳｎＯ２膜３の散乱反射
光低減導電膜は、湾曲タイプの固体型エレクトロクロミ
ックミラー８にも効果的であることが確認できた。Further, the thus obtained SnO 2
Using a substrate, bend 1400R at 650 ° C,
A curved solid-type electrochromic mirror 8 as shown in FIG. The reflectance of the solid-type electrochromic mirror 8 can be determined by applying or not applying the electrochromic layer 4 and coloring or decoloring the electrochromic layer 4.
This indicates that the conductive film for reducing scattered and reflected light of the SnO 2 film 3 according to the present invention is also effective for the curved solid-state electrochromic mirror 8.
【００２４】図２は、本発明に係る散乱反射光低減導電
膜及びその形成方法の実施例２を説明する図であり、本
発明係る散乱反射光低減導電膜であるＳｎＯ２膜３が、
液体型エレクトロクロミックミラー９に適用された実施
例を示す図である。図３において、液体型エレクトロク
ロミックミラー９は、上部ガラス基板１０及び下部ガラ
ス基板１１を有し、下部ガラス基板１１上には透明電極
として機能するＳｎＯ ２膜３が形成されており、上部ガ
ラス基板１０の下面にはＡｌ反射膜５が形成されてい
る。FIG. 2 shows a scattered and reflected light reducing conductive material according to the present invention.
FIG. 4 is a diagram for explaining a second embodiment of the film and the method for forming the film.
SnO that is a scattered reflection light reducing conductive film according to the invention2The membrane 3
Implementation applied to liquid electrochromic mirror 9
It is a figure showing an example. In FIG.
The lomic mirror 9 comprises an upper glass substrate 10 and a lower glass.
A transparent electrode on the lower glass substrate 11.
Functioning as SnO 2The film 3 is formed and the upper gas
An Al reflection film 5 is formed on the lower surface of the glass substrate 10.
You.
【００２５】さらに、Ａｌ反射膜５の下面には酸化タン
グステン等の電気化学的発色層（酸化タングステン等）
１２が形成されている。上部ガラス基板１０と下部ガラ
ス基板１１の間には、封止部材１３により封止された電
解液１４が充填されている。この液体型エレクトロクロ
ミックミラー９も実施例１同様に、ＳｎＯ２膜３とＡｌ
反射膜５の間に電圧を印加、非印加することにより、電
気化学的発色層１２を着色、消色し、ミラーの反射光量
を調整することができ、例えば、自動車用防眩ミラー等
に利用される。Further, an electrochemical coloring layer (such as tungsten oxide) of tungsten oxide or the like is formed on the lower surface of the Al reflection film 5.
12 are formed. The space between the upper glass substrate 10 and the lower glass substrate 11 is filled with an electrolyte solution 14 sealed by a sealing member 13. This liquid-type electrochromic mirror 9 also has the SnO 2 film 3 and the Al
By applying or not applying a voltage between the reflective films 5, the electrochemical color-forming layer 12 can be colored or decolored, and the amount of light reflected by the mirror can be adjusted. Is done.
【００２６】この液体型エレクトロクロミックミラー９
の下部ガラス基板１１上のＳｎＯ２膜３についても、下
部ガラス基板１１上にＳｎＯ２膜３を形成した後で、Ｓ
ｎＯ ２膜３の表面を研磨加工することにより、その表面
の凹凸６を除去し、実施例１同様に、図１（ｃ）又は
（ｄ）に示すように平坦にする。これにより、ＳｎＯ２
膜表面における散乱を小さく抑え、散乱反射光による白
濁の程度が減少させることができる。This liquid type electrochromic mirror 9
Of SnO on lower glass substrate 112Also for membrane 3
SnO on the glass substrate 112After forming the film 3, S
nO 2By polishing the surface of the film 3, the surface
1C or FIG. 1C as in the first embodiment.
Flatten as shown in (d). Thereby, SnO2
Scattering on the film surface is kept small, and white
The degree of turbidity can be reduced.
【００２７】以上、本発明に係る散乱反射光低減導電膜
及びその形成方法の実施の形態を、実施例１、２におい
てエレクトロクロミックミラーに適用されたＳｎＯ２膜
について説明したが、本発明は、上記実施例に限定され
ることなく、エレクトロクロミック表示素子、液晶表示
素子、太陽電池、発光素子、電界シールド、発光素子等
様々な機能素子の下地となるＳｎＯ２膜やＩＴＯ膜等の
透明導電膜についても適用可能である。As described above, the embodiments of the scattered / reflected light reducing conductive film and the method for forming the same according to the present invention have been described with reference to the SnO 2 film applied to the electrochromic mirror in Examples 1 and 2. Without being limited to the above embodiments, a transparent conductive film such as an SnO 2 film or an ITO film which is a base for various functional elements such as an electrochromic display element, a liquid crystal display element, a solar cell, a light emitting element, an electric field shield, and a light emitting element. Is also applicable.
【００２８】その他、本発明は、上記実施例等に限定さ
れることなく、特許請求の範囲記載の技術的事項の範囲
内でいろいろな実施の形態、実施例があることは言うま
でもない。In addition, it goes without saying that the present invention is not limited to the above-described embodiments and the like, and there are various embodiments and examples within the technical scope described in the claims.
【００２９】[0029]
【発明の効果】本発明は、透明導電膜をガラス等の基板
に形成してから研磨加工し、透明導電膜の成膜材料粒子
の不揃いや突起等に起因する凹凸を除去してヘイズの低
減を図るものであるから、透明導電膜の成膜過程でヘイ
ズ対応措置をとる従来の技術に比べ、簡単で手間がかか
らず、低コストで、透明導電膜上の散乱光を低減させ、
白濁を抑える透明導電膜を得ることができる。According to the present invention, the transparent conductive film is formed on a substrate such as glass and then polished to remove irregularities due to irregularities in the film forming material of the transparent conductive film and projections and the like, thereby reducing haze. Therefore, compared with the conventional technology that takes measures against haze in the process of forming the transparent conductive film, it is simpler, less troublesome, lower cost, and reduces the scattered light on the transparent conductive film.
A transparent conductive film that suppresses clouding can be obtained.
【図１】本発明に係る散乱反射光低減導電膜及びその形
成方法の実施例を説明する図であり、図１（ａ）、
（ｅ）は、本発明に係る散乱反射光低減導電膜としてＳ
ｎＯ ２膜が固体型エレクトロクロミックミラーに適用さ
れた実施例を示す図であり、図１（ｂ）、（ｃ）、
（ｄ）は、本発明の特徴を説明するための図である。FIG. 1 shows a scattered-reflection-light-reducing conductive film according to the present invention and its shape.
FIG. 1 is a diagram for explaining an embodiment of a forming method, and FIG.
(E) shows S as the scattered and reflected light reducing conductive film according to the present invention.
nO 2Film applied to solid-state electrochromic mirror
FIGS. 1 (b), (c),
(D) is a figure for explaining the feature of the present invention.
【図２】本発明に係る散乱反射光低減導電膜及びその形
成方法の実施例２を説明する図である。FIG. 2 is a view for explaining Example 2 of a scattered / reflected light reduction conductive film and a method for forming the same according to the present invention.
１、８ 固体型エレクトロクロミックミラー ２ ガラス基板 ３ ＳｎＯ２膜 ４ 固体型エレクトロクロミック層 ５ Ａｌ反射膜 ６ 凹凸 ７、７’ 平坦面 ９ 液体型エレクトロクロミックミラー １０ 上部ガラス基板 １１ 下部ガラス基板 １２ 電気化学発色層 １３ 封止部材 １４ 電解液1,8-solid-state electrochromic mirror 2 glass substrate 3 SnO 2 film 4 solid type electrochromic layer 5 Al reflection film 6 uneven 7,7 'flat surface 9 liquid electrochromic mirror 10 upper glass substrate 11 lower glass substrate 12 electrochemical Coloring layer 13 Sealing member 14 Electrolyte
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｂ 13/00 ５０３ Ｈ０１Ｂ 13/00 ５０３Ｂ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01B 13/00 503 H01B 13/00 503B
Claims (6)
が入射した際に生じる散乱反射光を低減する散乱反射光
低減導電膜を形成する方法であって、 上記基板上に上記透明導電膜を形成し、 該透明導電膜の表面を研磨加工し、上記散乱反射光の原
因である上記表面上の凹凸を除去することを特徴する散
乱反射光低減導電膜の形成方法。1. A method for forming a scattered / reflected light reducing conductive film for reducing scattered / reflected light generated when light enters a transparent conductive film formed on a substrate, the method comprising: And forming a surface of the transparent conductive film by polishing to remove irregularities on the surface, which is a cause of the scattered reflected light.
ＩＴＯ膜であることを特徴とする請求項１記載の散乱反
射光低減導電膜の形成方法。2. The method according to claim 1, wherein the transparent conductive film is a SnO 2 film or an ITO film.
ミック素子、液晶素子、太陽電池、電界シールド又は発
光素子に適用されることを特徴とする請求項１又は２記
載の散乱反射光低減導電膜の形成方法。3. The method according to claim 1, wherein the transparent conductive film is applied to an electrochromic device, a liquid crystal device, a solar cell, an electric field shield or a light emitting device. Method.
ロクロミックミラー又は液体型エレクトロクロミックミ
ラーの透明導電膜であることを特徴とする請求項１又は
２記載の散乱反射光低減導電膜の形成方法。4. The method according to claim 1, wherein the transparent conductive film is a transparent conductive film of a solid-state electrochromic mirror or a liquid-type electrochromic mirror.
粒子を用いて、湿式研磨により、上記透明導電膜の表面
に傷を生じさせないようにしたことを特徴とする請求項
１、２、３又は４記載の散乱反射光低減導電膜の形成方
法。5. The polishing process according to claim 1, wherein said polishing is performed by using abrasive particles of SiO 2 so as not to cause scratches on the surface of said transparent conductive film by wet polishing. Or the method for forming a scattered and reflected light reducing conductive film according to 4.
って、 上記透明導電膜は、上記基板上に形成された状態におい
て、その表面が研磨加工され上記表面上の凹凸が除去さ
れており、上記透明導電膜に光を入射した際に生じる散
乱反射光が低減されていることを特徴する散乱反射光低
減導電膜。6. A transparent conductive film formed on a substrate, wherein the surface of the transparent conductive film is polished to remove irregularities on the surface while being formed on the substrate. And a scattered-reflected-light-reducing conductive film, wherein scattered reflected light generated when light is incident on the transparent conductive film is reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31267099A JP2001133816A (en) | 1999-11-02 | 1999-11-02 | Method for forming electrically conductive film which diminishes scattered and reflected light |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31267099A JP2001133816A (en) | 1999-11-02 | 1999-11-02 | Method for forming electrically conductive film which diminishes scattered and reflected light |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001133816A true JP2001133816A (en) | 2001-05-18 |
Family
ID=18032024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31267099A Pending JP2001133816A (en) | 1999-11-02 | 1999-11-02 | Method for forming electrically conductive film which diminishes scattered and reflected light |
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| Country | Link |
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| JP (1) | JP2001133816A (en) |
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