JP2001127212A - Semiconductor device and manufacturing method of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent warpage of a semiconductor element and a deformation of the element form being generated in a BCC type semiconductor device. SOLUTION: In a BBC type semiconductor device 10 which seals a semiconductor element 2 in a package consisting of a sealing resin 1 at a biased position within the package and comprises metal films 5, which are respectively provided on resin bumps 1a on the resin 1 and connected with the element 2 through bonding wires 3 to function as a mounting terminals, a sealing resin recessed part 6 is formed in the site which corresponds to the element 2 in the resin 1 and the volume of the resin 1 is reduced to prevent a warpage of the element 2 and a deformation of the element 2 from being generated.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a semiconductor device manufacturing technique, and more particularly, to a BCC type C.
The present invention relates to a semiconductor device adopting a sealing form such as SP and a technology effective when applied to a manufacturing technology thereof.

[0002]

2. Description of the Related Art For example, a resin-sealed semiconductor device has a structure in which a semiconductor element is bonded on a die pad (tab) of a lead frame, and the periphery thereof is sealed with a sealing resin. Thus, there is known a structure in which an inner lead is bonded and supported on an upper portion of a semiconductor element, and the periphery thereof is sealed with a sealing resin.

[0003]

In the structure using the above-mentioned die pad, the semiconductor element undergoes bending deformation at the time of temperature change due to the difference in the coefficient of thermal expansion between the metal material constituting the die pad and the semiconductor element made of Si or the like. There is a concern that

Further, in the case of the LOC structure, there is a technical problem that the internal structure is unbalanced due to the routing of the inner leads above the semiconductor element, and the package is likely to be warped.

In order to further reduce the size of the package based on these technical problems, a BCC type sealing form is known. That is, in the plate-shaped lead frame on which the semiconductor element is mounted, a plurality of recesses are formed by etching or the like in the periphery of the mounting area of the semiconductor element, and an electrode layer is formed on the inner periphery of the recess by plating or the like, After the electrode layer and the semiconductor element are electrically connected by a bonding wire, the semiconductor element, the bonding wire, and the electrode layer on the mounting surface side of the semiconductor element in the lead frame are sealed with a sealing resin. Is dissolved and removed by etching or the like, so that the electrode layer is exposed to the outer peripheral portion of the sealing resin, and functions as a mounting electrode in surface mounting.

However, in the BCC type sealing mode, there is a technical problem that the package is likely to be warped because the sealing resin is biased toward the semiconductor element.

An object of the present invention is to provide a semiconductor device capable of preventing warpage of a package and a manufacturing technique thereof.

Another object of the present invention is to provide a semiconductor device capable of securing the flatness of a package and improving the customer mountability, and a technique for manufacturing the same.

Another object of the present invention is to provide a BCC type CS.
It is an object of the present invention to provide a semiconductor device capable of preventing warpage of a package at P and a manufacturing technique thereof.

Another object of the present invention is to provide a BCC type CS.
It is an object of the present invention to provide a semiconductor device capable of ensuring the flatness of a package in P and improving the customer mountability, and a manufacturing technique thereof.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0012]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

According to the present invention, in a semiconductor device including a semiconductor element and a sealing resin covering at least a part of the semiconductor element, the semiconductor device has a structure in which a recess is formed in a part of the sealing resin.

According to the present invention, there is provided a semiconductor device including a semiconductor element and a sealing resin covering at least a part of the semiconductor element, wherein a metal plate is embedded in a surface of the sealing resin. .

The present invention also provides a semiconductor element, a sealing resin covering at least a part of the semiconductor element, a projection formed on a part of the sealing resin, and an external connection electrode formed on a surface of the projection. A semiconductor device including a bonding wire erected between the external connection electrode and the semiconductor element by ball bonding and electrically connecting the external connection electrode and the semiconductor element.
A bonding position is set, and a second bonding position is set on the side of the semiconductor element.

Further, the present invention provides a semiconductor device, a sealing resin covering at least a part of the semiconductor element, a protrusion formed on a part of the sealing resin, and an external connection electrode formed on a surface of the protrusion. In a semiconductor device including an external connection electrode and a bonding wire for electrically connecting the semiconductor element, the semiconductor element has a structure located substantially at the center of the sealing resin.

Further, a method of manufacturing a semiconductor device according to the present invention
A first step of forming a plurality of recesses on the mounting surface side of the semiconductor element in the lead frame so as to surround the semiconductor element, a second step of selectively forming a metal film on an inner periphery of the recess, A third step of mounting a semiconductor element on the semiconductor element, a fourth step of laying a bonding wire between the semiconductor element and the metal film to electrically connect the semiconductor element, and sealing the semiconductor element so as to have a recess immediately above the semiconductor element. The method includes a fifth step of sealing the semiconductor element and the bonding wires with a sealing resin, and a sixth step of removing the lead frame and exposing the metal film to the outside.

Further, a method of manufacturing a semiconductor device according to the present invention
Forming a plurality of recesses on the mounting surface side of the semiconductor element in the lead frame so as to surround the semiconductor element;
A step of selectively forming a metal film on the inner periphery of the recess, a step of laying a bonding wire between the semiconductor element and the metal film in a state where the semiconductor element is positioned on the lead frame, and electrically connecting the semiconductor element to the semiconductor element; The method includes a step of sealing the semiconductor element and the bonding wires with a sealing resin while the element is lifted from the lead frame, and a step of exposing the metal film to the outside by removing the lead frame.

[0019]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 shows one embodiment of the present invention, B
FIG. 2 is a cross-sectional view showing an example of a configuration of a semiconductor device having a sealing structure made of a CC type CSP. FIG. 2 is an upper plan view thereof, and FIG. 3 is a lower plan view thereof. FIG.
3A to 3H are schematic cross-sectional views illustrating an example of a method for manufacturing a semiconductor device of the present embodiment in the order of steps.

BCC type semiconductor device 1 shown in FIGS.
In 0, 1 is a sealing resin, 2 is a semiconductor element, 3 is a bonding wire, 4 is a die bonding material, and 5 is a metal film formed on the surface of the resin bump 1a of the sealing resin 1 by a method described later. It is. This metal film 5 functions as a mounting electrode during surface mounting.

In the present embodiment, in the sealing resin 1 for sealing the semiconductor element 2, a sealing resin recess 6 is formed on the outer peripheral surface immediately above the semiconductor element 2. The sealing resin concave portion 6 can be formed, for example, by providing a projection on a cavity surface of a molding die of the sealing resin 1.

Due to the presence of the sealing resin recess 6 in the sealing resin 1, the volume of the sealing resin 1 for sealing the semiconductor element 2 in the BCC type sealing mode which is present only on one side of the semiconductor element 2. This reduces warpage of the semiconductor device 10 caused by imbalance in the amount of distribution of the sealing resin 1 around the semiconductor element 2.

Next, an example of a method of manufacturing the above-described BCC type semiconductor device 10 will be described with reference to FIG.

First, a photoresist 22 is applied to both front and back surfaces of the plate-shaped lead frame 21 (the mounting surface of the semiconductor element 2 is the front side), and a position surrounding the mounting area of the semiconductor element 2 in the photoresist 22 on the front surface side. Next, a plurality of openings 22a are formed by exposure / development processing (FIG. 7).
(A)).

Next, a recess 21a is formed in the portion of the photoresist 22 exposed at the opening 22a by half-etching the lead frame 21 (FIG. 7B).

Next, the inner peripheral portion of the recess 21a of the lead frame 21 is plated by, for example, gold (Au) / palladium (Pd) /
A metal film 5 having a multilayer structure of nickel (Ni) / palladium (Pd) is formed (FIG. 7C).

Next, the photoresist 22 covering the lead frame 21 is removed (FIG. 7D).

Next, the semiconductor element 2 is die-bonded to the center of the plurality of recesses 21a (metal film 5) in the lead frame 21 via the die bonding material 4 (FIG. 7E).

Next, a plurality of bonding pads (not shown) of the semiconductor element 2 mounted on the lead frame 21 are provided.
A bonding wire 3 is installed between the metal film 5 formed on the inner periphery of each of the plurality of recesses 21a by ball bonding or the like (FIG. 7 (f)).

Next, the lead frame 21 on which the semiconductor element 2 is mounted by die bonding and wire bonding as described above is transferred to the transfer mold 3
0 between the upper mold 31 and the lower mold 32,
The resin is press-fitted into a cavity 31a formed so as to surround the semiconductor element 2 and the like, and the molding of the sealing resin 1 is performed. In the case of the present embodiment, in the cavity 31 a of the upper mold 31, a mold surface projection 31 b is protruded at a position directly above the semiconductor element 2, whereby the sealing resin 1 is provided in the sealing resin 1. The recess 6 is formed. The resin filled in the concave portion 21a of the lead frame 21
a (FIG. 7 (g)).

Next, by completely removing the lead frame 21 taken out from the transfer mold 30 by etching, the lead frame 21 is removed as shown in FIG.
The semiconductor device 10 of the BCC type having the structure exemplified in FIG.

Next, various modifications of the semiconductor device 10 of the present embodiment will be described.

The semiconductor device 10A shown in FIG. 4 has a configuration in which the metal plate 7 is mounted inside the sealing resin recess 6 formed in the sealing resin 1 in the configuration of the semiconductor device 10 described above. Thereby, the effect of preventing the warpage deformation by eliminating the unbalance of the distribution of the sealing resin 1 by the sealing resin concave portion 6 and
The heat radiation efficiency from the semiconductor element 2 can be improved.

The method for mounting the metal plate 7 inside the sealing resin recess 6 of the sealing resin 1 is as follows.
A method in which the metal plate 7 is arranged by a method such as vacuum suction instead of the mold surface protrusion 31b in the upper mold 31 of FIG. Alternatively, a method of fixing the metal plate 7 to the sealing resin recess 6 of the semiconductor device 10 having the configuration of FIG. 1 manufactured by the method of FIG.

The semiconductor device 10 B of the modification shown in FIG. 5 has a package (sealing resin 1) whose thickness is substantially the same as the thickness of the semiconductor element 2. As a realization method, the cavity 31a of the upper die 31 illustrated in FIG.
Mold 3 for thin thickness with reduced height
It is conceivable to use 0. In this case, when the margin of the wire height is small, in the ball bonding, the side of the metal film 5 is connected to the first bonding 8
The loop height of the bonding wire 8 is reduced as much as possible by devising the bonding order so that the bonding pad (not shown) on the semiconductor element 2 side is the second bonding 8b.

In the case of the semiconductor device 10B, the effect of reducing the warpage of the package can be obtained by reducing the thickness of the sealing resin 1, as in the case of the structure of FIG.

The semiconductor device 10 C of the modification shown in FIG. 6 has a structure in which the position of the semiconductor element 2 is substantially at the center of the sealing resin 1.

As a method of realizing the structure of the semiconductor device 10C shown in FIG. 6, a support pin (not shown) which moves up and down in both the upper mold 31 and the lower mold 32 in the transfer mold 30 shown in FIG. Then, when closing the mold,
The semiconductor element 2 is floated at the center of the cavity 31a,
In that state, the resin is filled. The support pin is retracted into the mold and pulled out in conjunction with the mold opening. In this case, support pin marks 9 remain on the sealing resin 1.

If one of the upper and lower support pins has a vacuum suction function, the other support pin may be omitted.

Next, an example of mounting the semiconductor device of the present embodiment will be described. FIG. 8 is a schematic sectional view showing a mounting example of the semiconductor device 10 of the present embodiment.

In the example of FIG. 8, a plurality of metal films 5 functioning as mounting terminals in the semiconductor device 10 are aligned on a wiring pattern 41 formed on one main surface of a mounting substrate 40, and solder reflow or the like is performed. Is mounted on the surface via the solder.

In the case of the present embodiment, since the sealing resin concave portion 6 is formed in the sealing resin 1 of the semiconductor device 10, the package (sealing resin 1) is flat without warping deformation. The floating of the plurality of metal films 5 functioning as terminals from the mounting surface is prevented, and reliable surface mounting can be performed. Furthermore, the occurrence of warpage of the sealing resin 1 due to a temperature change during operation after mounting is also suppressed, and the generation of thermal stress due to the warpage is reduced.
It is also possible to prevent the occurrence of a failure after mounting due to the peeling off of No. 2 and to improve the customer mountability.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above-described embodiments and can be variously modified without departing from the gist thereof. Needless to say, there is.

For example, the shape of the sealing resin recess 6 is not limited to a rectangle, but may be an arbitrary shape such as a circle or a polygon.

[0046]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

According to the semiconductor device of the present invention, it is possible to prevent the package from being warped.

According to the semiconductor device of the present invention, it is possible to obtain the effect that the flatness of the package can be ensured and the customer mountability can be improved.

According to the semiconductor device of the present invention, it is possible to prevent the package from being warped in a BCC type CSP.

According to the semiconductor device of the present invention, it is possible to obtain the effect that the flatness of the package in the CSP of the BCC type can be secured and the mountability to the customer can be improved.

According to the method of manufacturing a semiconductor device of the present invention,
The effect that warpage of the package can be prevented can be obtained.

According to the method of manufacturing a semiconductor device of the present invention,
The effect is obtained that the flatness of the package can be secured and the customer mountability can be improved.

According to the method of manufacturing a semiconductor device of the present invention,
The advantage is obtained that the package warpage deformation in the BCC type CSP can be prevented.

According to the method of manufacturing a semiconductor device of the present invention,
The effect that the package flatness in the BCC type CSP can be secured and the customer mountability can be improved is obtained.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of a configuration of a BCC type semiconductor device according to an embodiment of the present invention.

FIG. 2 is a top plan view thereof.

FIG. 3 is a plan view of the lower part.

FIG. 4 is a sectional view showing a modification of the BCC type semiconductor device according to one embodiment of the present invention;

FIG. 5 is a sectional view showing a modification of the BCC type semiconductor device according to one embodiment of the present invention;

FIG. 6 is a cross-sectional view showing a modification of the BCC type semiconductor device according to one embodiment of the present invention;

7A to 7H are schematic cross-sectional views illustrating an example of a method of manufacturing a semiconductor device according to an embodiment of the present invention in the order of steps.

FIG. 8 is a schematic sectional view showing a mounting example of a semiconductor device according to an embodiment of the present invention;

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 sealing resin 1 a resin bump 2 semiconductor element 3 bonding wire 4 die bonding material 5 metal film 6 sealing resin recess 7 metal plate 8 bonding wire 8 a first bonding 8 b second bonding 9 support pin mark 10 semiconductor device 10 A semiconductor device 10 B Semiconductor device 10C Semiconductor device 21 Lead frame 21a Depression 22 Photoresist 22a Opening 30 Transfer mold 31 Upper mold 31a Cavity 31b Mold surface projection 32 Lower mold 40 Mounting board 41 Wiring pattern 42 Solder

Claims (10)

[Claims] 1. A semiconductor device comprising a semiconductor element and a sealing resin covering at least a part of the semiconductor element,
A semiconductor device, wherein a recess is formed in a part of the sealing resin. 2. A semiconductor device comprising a semiconductor element and a sealing resin covering at least a part of the semiconductor element,
A semiconductor device, wherein a metal plate is embedded in a surface of the sealing resin. 3. The semiconductor device according to claim 1, wherein a projection formed on a part of the sealing resin, an external connection electrode formed on a surface of the projection, the external connection electrode and the semiconductor. And a bonding wire for electrically connecting the element to the semiconductor device. 4. A semiconductor element, a sealing resin covering at least a part of the semiconductor element, a projection formed on a part of the sealing resin, and an external connection electrode formed on a surface of the projection. A semiconductor device including a bonding wire that is bridged between the external connection electrode and the semiconductor element by ball bonding and that electrically connects the external connection electrode and the semiconductor element; A semiconductor device, wherein a first bonding position of ball bonding is set, and a second bonding position is set on the side of the semiconductor element. 5. A semiconductor element, a sealing resin covering at least a part of the semiconductor element, a projection formed on a part of the sealing resin, and an external connection electrode formed on a surface of the projection. A semiconductor device including a bonding wire for electrically connecting the external connection electrode and the semiconductor element, wherein the semiconductor element is located at a substantially central portion of the sealing resin. 6. The semiconductor device according to claim 1, wherein said semiconductor device is a BCC (bump chip carrier) type CSP (chip size package). Semiconductor device. 7. A first step of forming a plurality of recesses on a mounting surface side of a semiconductor element in a lead frame so as to surround the semiconductor element, and a step of selectively forming a metal film on an inner periphery of the recess. A third step of mounting the semiconductor element on the lead frame; a fourth step of extending a bonding wire between the semiconductor element and the metal film to electrically connect the semiconductor element to the metal film; A fifth step of sealing the semiconductor element and the bonding wires with a sealing resin so as to have a recess directly above the semiconductor element; and a step of removing the lead frame and exposing the metal film to the outside. 6. A method for manufacturing a semiconductor device, comprising: 8. The method for manufacturing a semiconductor device according to claim 7, wherein in the fifth step, a mold projection is formed at a position facing the semiconductor element in a cavity of a sealing mold,
A method of forming the concave portion of the sealing resin, or disposing a metal plate on an inner peripheral portion of a cavity of a sealing mold corresponding to the concave portion of the sealing resin, thereby forming the concave portion of the sealing resin. A method of forming and arranging the metal plate in the recess at the same time. 9. a step of forming a plurality of recesses on the mounting surface side of the semiconductor element in the lead frame so as to surround the semiconductor element; a step of selectively forming a metal film on an inner periphery of the recess; Laying a bonding wire between the semiconductor element and the metal film in a state where the semiconductor element is positioned on a lead frame and electrically connecting the semiconductor element and the metal film; and sealing the semiconductor element while lifting the semiconductor element from the lead frame. A method of manufacturing a semiconductor device, comprising: a step of sealing the semiconductor element and the bonding wire with a stopper resin; and a step of removing the lead frame to expose the metal film to the outside. 10. The semiconductor device manufacturing method according to claim 7, wherein the semiconductor device is a BCC (bump chip carrier) type CSP (chip size package). Device manufacturing method.