JP2001100187A - Substrate for liquid crystal panel, liquid crystal panel, electronic instrument using the same, and manufacturing method of substrate for liquid crystal panel - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a reflection type display having a wide viewing angle and bright high quality by providing a reflection electrode with an optimal reflection characteristic in a reflection type liquid crystal panel. SOLUTION: The substrate for the liquid crystal panel comprises a transistor and a reflection electrode 13 connected with the transistor on the substrate. Under the reflection electrode 13, the substrate has 2nd conductive layer 10a which is laminated on an area corresponding to the reflection electrode 13 through an interlayer insulating film and is formed in a rugged form by being provided with lots of through-holes. Looking from the 2nd conductive layer on average, a shading film covering a gap of the reflection electrode 13 is also formed, and this shading film part has no open holes.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a liquid crystal panel substrate on a reflective electrode side constituting a reflection type liquid crystal panel, a liquid crystal panel formed using the liquid crystal panel substrate, and a structure formed using the liquid crystal panel. Electronic equipment and a method of manufacturing such a liquid crystal panel substrate.

[0002]

2. Description of the Related Art In recent years, liquid crystal panels have been used as information display devices for portable devices such as cellular phones and portable information terminals. The content of the information to be displayed is from character display to a dot matrix type liquid crystal panel is used to display a large amount of information at a time, and the number of pixels is gradually increased and the duty is high.

In such portable equipment, a simple matrix type liquid crystal panel is used as a display device. However, in a simple matrix type liquid crystal panel, when multiplex driving is performed, the higher the duty ratio as a selection signal of a row scanning line, the higher the duty. This is a serious problem in a battery-operated portable device that requires a voltage and requires a little reduction in power consumption.

[0004] For this reason, the present applicant has filed Japanese Patent Application No.
No. 11293 proposes a reflective liquid crystal panel of a static drive type in which a substrate of a liquid crystal panel is a semiconductor substrate, a memory circuit is formed on the semiconductor substrate for each pixel, and display control is performed based on data held in the memory circuit. . According to such a reflective liquid crystal panel, display is performed by reflecting light incident from the outside. Therefore, a backlight as a light source is not required, so that power consumption is low, and a thin and light weight can be achieved.

[0005]

However, according to the reflective liquid crystal panel proposed by the applicant of the present invention or the electronic apparatus using the same, the contrast is high, the response speed is relatively fast, and the driving voltage is low. Although it has well-balanced characteristics that are basically required for a display, such as low display and easy gray scale display, it also has problems with a narrow viewing angle and is not suitable for bright display in principle Have a point.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and has a wide viewing angle, a reflective liquid crystal panel substrate which enables bright and high-quality reflective display, and a method using the liquid crystal panel substrate. It is an object to provide a liquid crystal panel, an electronic device using the liquid crystal panel, and a method for manufacturing the liquid crystal panel substrate.

[0007]

In order to solve the above-mentioned problems, a substrate for a liquid crystal panel according to the present invention comprises, on a substrate, a transistor, a reflective electrode connected to the transistor, and an interlayer insulating film below the reflective electrode. A first silicon oxide film, a second silicon oxide film formed on the first silicon oxide film by a polycondensation reaction between a silicon compound and hydrogen peroxide, It is characterized by being formed by a third silicon oxide film formed on the second silicon oxide film.

According to the liquid crystal panel substrate of the present invention, the first
The second silicon oxide film formed by the polycondensation reaction of the silicon compound and the hydrogen peroxide on the silicon oxide film of step (a) smoothly smoothes the unevenness formed by the flow process prior to the second silicon oxide film forming step. It is possible to make a curved shape. For this reason, the third silicon oxide film formed on the second silicon oxide film can form a good insulating film without cracks, and can be formed above the reflective film via the interlayer insulating film. The surface of the electrode (i.e., the reflection surface) can also have an uneven shape along the unevenness of the second silicon oxide film. As a result, a reflective electrode having a good degree of scattering can be formed.

According to one aspect of the liquid crystal panel substrate of the present invention, a concave / convex film formed in a concave / convex shape under the reflective electrode via an interlayer insulating film in a region corresponding to the reflective electrode. Having. For this reason, the surface of the reflective electrode (that is, the reflective surface) formed thereover via the interlayer insulating film is also formed in an uneven shape corresponding to the uneven shape in the uneven film. For this reason, the degree of scattering of the reflected light can be increased in accordance with the degree of unevenness on the surface of the reflective electrode. As a result,
When a direct-view reflective liquid crystal device is formed using the liquid crystal panel substrate, it is possible to increase the intensity of light scattered in a direction perpendicular to the display screen even for incident light from all angles. With the reflective electrode having the optimal reflection characteristics, a bright high-quality reflective display on a natural ground surface with a wide viewing angle can be performed.

According to one aspect of the liquid crystal panel substrate of the present invention, the first silicon oxide film has a thickness of 50 to 50.
What is necessary is just to form a film in 0 nm.

As a result, the reflection electrode formed on the interlayer insulating film can form a gently uneven shape.
Good scattering can be provided.

According to one aspect of the liquid crystal panel substrate of the present invention, it is preferable that the third silicon oxide film is porous.

According to this aspect, the gasification components such as water and hydrogen contained in the second silicon oxide film can be easily and sufficiently desorbed by the annealing treatment performed later. It is possible to form an interlayer insulating film made of a highly reliable silicon oxide film without any problem.

According to one aspect of the liquid crystal panel substrate of the present invention, the step of forming the interlayer insulating film includes at least the following steps (a) to (d). I do. (A) reacting a silicon compound with at least one of oxygen and a compound containing oxygen by a chemical vapor deposition method to form a first silicon oxide film; and (b) forming a silicon compound and hydrogen peroxide. Forming a second silicon oxide film by reacting by a chemical vapor deposition method, (c) 3
A step of performing an annealing treatment at a temperature of 50 to 500 ° C., and (d) forming a third silicon oxide film by reacting the silicon compound with at least one of oxygen and a compound containing oxygen by a chemical vapor deposition method Process.

According to this aspect, an interlayer insulating film having good reliability can be formed, and at the same time, a reflective electrode formed thereon is formed on an interlayer insulating film having a gently uneven curve shape. Therefore, it is possible to form a reflective electrode having a good degree of scattering.

According to one embodiment of the liquid crystal panel substrate of the present invention, after the step (d), a silicon compound, at least one of nitrogen and a compound containing nitrogen, and a compound containing impurities are subjected to chemical vapor deposition. (E) forming a silicon nitride film by reacting by a method.

According to this aspect, since the silicon nitride film can be formed on the silicon oxide film having the gentle unevenness, it is possible to form the silicon nitride film having good insulating properties without cracks or the like. At the same time, transistors and wirings having excellent moisture resistance can be formed.

According to one embodiment of the liquid crystal panel substrate of the present invention, the silicon compound used in the step (b) is:
Monosilane, disilane, SiH2 Cl2, SiF4, CH3
It is characterized in that it is at least one selected from an inorganic silane compound such as SiH3 and an organic silane compound such as tripropylsilane and tetraethoxysilane.

In this embodiment, in the step (b), the silicon compound is an inorganic silane compound;
May be carried out by a reduced pressure chemical vapor deposition method under the temperature conditions of above.

In this embodiment, in the step (b), the silicon compound is an organic silane compound;
It may be performed by a reduced pressure chemical vapor deposition method at a temperature of 50 ° C.

According to one aspect of the liquid crystal panel substrate of the present invention, the step (a) is performed by a plasma enhanced chemical vapor deposition method at a temperature of 300 to 500 ° C.

According to one embodiment of the liquid crystal panel substrate of the present invention, the silicon compound used in the step (a) is preferably an organic silane compound.

According to one aspect of the liquid crystal panel substrate of the present invention, a light-shielding film which is formed of the same film as the concavo-convex film and shields a gap between the reflective electrodes when viewed from a direction perpendicular to the substrate is further provided. Have.

According to this aspect, the concavo-convex film is made of, for example, an Al film, and the same film is provided with a light-shielding film for shielding the gap between the reflective electrodes. Therefore, if a transistor is arranged below the reflective electrode and the uneven film, light that enters through the gap between the reflective electrodes can be shielded by the light-shielding film, and this light enters the semiconductor layer forming the transistor and causes light leakage. Can be avoided. And
By forming both the concavo-convex film and the light-shielding film from the same film, the number of layers in the laminated structure does not need to be increased unnecessarily, and the device configuration and the manufacturing process in the liquid crystal panel substrate can be simplified. . In addition, as long as the uneven film is a transparent film, as long as it is formed in an uneven shape, the basic function of providing unevenness to the reflective electrode is maintained. Is obtained.

According to one aspect of the liquid crystal panel substrate of the present invention, the uneven film is made of one conductive film, and further has a wiring formed from the same film as the one conductive film.

According to this aspect, the uneven film is made of, for example, A
An interconnect such as a relay interconnect between the reflective electrode and the transistor is formed from the one conductive film. That is, by forming both the concavo-convex film and the wiring from the same film, the number of layers in the laminated structure does not need to be increased unnecessarily, and the device configuration and the manufacturing process in the liquid crystal panel substrate can be simplified. Become. In addition, as long as the uneven film is an insulating film, as long as it is formed in an uneven shape, the basic function of providing unevenness to the reflective electrode is maintained. The effect of increasing is obtained.

According to one aspect of the liquid crystal panel substrate of the present invention, another conductive film is further laminated between the one conductive film and the substrate via an interlayer insulating film. Due to the presence and absence of another conductive film, a step is formed in the uneven film formed of the one conductive film portion located above the other conductive film.

In this aspect, another conductive film is further laminated between the one conductive film and the substrate with an interlayer insulating film interposed therebetween. A configuration may be such that a step is formed in the uneven film formed of the one conductive film portion located above another conductive film.

According to this structure, for example, in the case of a concave-convex film in which a through-hole simply formed in a flat film is formed as a recess, there are only two levels on the surface of the concave-convex film. Due to the presence and absence of other conductive films, three or more levels can be present on the surface of the uneven film.
This makes it possible to efficiently increase the degree of scattering of the reflected light. In this case, the other conductive film may be positively patterned so that a fine step is formed on one surface of the uneven film, or a pattern of a wiring or the like formed from the other conductive film may be used as it is. You may comprise so that a level | step difference may arise.

According to one aspect of the liquid crystal panel substrate of the present invention, the uneven film is formed in an uneven shape by forming a large number of fine holes in a flat film irregularly.

According to this aspect, since the uneven film can be formed by forming holes by etching after forming the flat film, the uneven film can be formed relatively easily. In particular, in the case where a wiring or a light-shielding film is formed from the same film as the concavo-convex film, such holes can be formed at the same time as patterning the wiring and the light-shielding film by photolithography and etching. This is advantageous in simplifying the process.

It is also possible to form an uneven film by forming fine projections instead of holes, that is, to form an uneven film so as to have a convex portion instead of a concave portion.
Also in this case, when the wiring and the light-shielding film are formed from the same film as the uneven film, the wiring and the light-shielding film can be formed simultaneously with patterning by photolithography and etching, so that the manufacturing process is simplified. This is advantageous in that

In one aspect of the liquid crystal panel substrate of the present invention, the interlayer insulating film is formed of a CMP (Chemical Mechanical).
Polishing).

According to this aspect, the unevenness formed below the interlayer insulating film is flattened, and the reflective electrode formed thereon can be formed flat. This embodiment is very effective in applications in which a high flatness is required for the reflective electrode of the liquid crystal panel substrate, for example, a light valve for a projector.

According to one aspect of the liquid crystal panel substrate of the present invention, the substrate is a semiconductor substrate. According to this aspect, a transistor for controlling the switching of the reflective electrode can be formed on the semiconductor substrate.

In this aspect, the substrate may be formed of single crystal silicon.

In another aspect of the liquid crystal panel substrate of the present invention, the substrate is a transparent substrate.

According to this embodiment, a transistor for controlling the switching of the reflective electrode can be formed on the transparent substrate.

In this aspect, the substrate may be formed of glass. In this case, a liquid crystal panel substrate can be manufactured at low cost.

In order to solve the above problems, the liquid crystal panel of the present invention comprises a liquid crystal sandwiched between the above-mentioned liquid crystal panel substrate of the present invention and a transparent counter substrate.

According to the liquid crystal panel of the present invention, since the liquid crystal panel substrate of the present invention is provided, if a direct-view reflective liquid crystal device is constructed using the liquid crystal panel, optimal reflection characteristics can be obtained. With the reflective electrode, a bright, high-quality reflective display can be performed on a natural ground surface with a wide viewing angle.

According to the electronic apparatus of the present invention, since the liquid crystal panel of the present invention described above is provided, the viewing angle is wide and the viewing angle is wide due to the direct-view type reflective display unit constituted by using the liquid crystal panel. A bright, high-quality reflective display can be performed on an appropriate base surface.

The method of manufacturing a liquid crystal panel substrate according to the present invention comprises:
A method for manufacturing a liquid crystal panel substrate, comprising: a plurality of scanning lines and a plurality of data lines on a substrate; a transistor connected to the scanning line and the data line; and a reflective electrode connected to the transistor. A step of forming an uneven film on the substrate in a region corresponding to the reflective electrode; and forming the reflective electrode on the uneven film via an interlayer insulating film. The membrane is the first
And a second silicon oxide film formed on the first silicon oxide film and formed by a polycondensation reaction between the silicon compound and hydrogen peroxide, and a third silicon oxide film It is characterized by the following.

According to the method of manufacturing a substrate for a liquid crystal panel of the present invention, the second silicon oxide film forming step can make the unevenness formed by the previous flow process into a gentle curved shape, and The surface of the reflective electrode formed above via the interlayer insulating film (that is, the reflective surface) can also have an uneven shape along the unevenness of the second silicon oxide film. As a result, a reflective electrode having a good degree of scattering is formed. Therefore, the above-described liquid crystal panel substrate of the present invention can be manufactured relatively easily and with good reproducibility.

The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

[0046]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.

(Schematic Configuration of Liquid Crystal Panel and First Embodiment of Liquid Crystal Panel Substrate of the Present Invention) First, the schematic configuration of the entire liquid crystal panel provided with the liquid crystal panel substrate of the present invention, and the present invention will be described. The configuration of the first embodiment of the liquid crystal panel substrate will be described with reference to FIGS. 1 and 5 and FIGS. Here, FIG. 1 is a sectional view of a pixel region of the liquid crystal panel substrate on the reflective electrode side in the first embodiment of the present invention, and FIG. 5A is a plan view of this pixel region. FIG. 5B is an enlarged plan view showing a gap between the reflective electrodes in FIG. FIG. 13 is a plan view of the entire liquid crystal panel, and FIG. 14 is a sectional view taken along the line AA ′.

In the liquid crystal panel substrate on the reflective electrode side in the present invention, a semiconductor substrate is used as the substrate 1 as shown in FIG. The material of the substrate 1 is not limited to this embodiment. For example, a transparent substrate such as a glass substrate may be used.

First, an outline of the entire structure of the reflection type liquid crystal panel of the present invention will be described with reference to FIGS.

As shown in FIGS. 13 and 14, an image display area 20 is provided in the center of the substrate 1 on the side of the reflective electrode (the lower side in FIG. 14). The lines and the column scanning lines are arranged in a matrix. Each pixel is arranged according to the intersection of a row scan line and a column scan line,
Each pixel is provided with a reflection electrode 13 and furthermore, each reflection electrode 1
A liquid crystal pixel driving circuit is provided on the substrate 1 below the substrate 3 as described later. In a peripheral area of the image display area 20, a row scanning line driving circuit 111 for supplying a row scanning signal to a row scanning line, a column scanning line driving circuit 113 for supplying a column scanning signal to a column scanning line, and a pad area 26. An input data line 22 for taking in input data from outside is arranged. A substrate 1 and a common electrode 3 disposed opposite to the substrate 1 and having an inner surface
Transparent opposing substrate 3 made of, for example, glass on which is formed
Reference numeral 5 denotes a liquid crystal panel 30 in which a liquid crystal 37 is sealed in a gap between the solid line and the alternate long and short dash line by a seal member 36, and a liquid crystal 37 is sealed in the gap. The hatched area sandwiched between the image display area 20 and the dotted line on the substrate 1 prevents light from entering the row scan line drive circuit 111, the column scan line drive circuit 113, and the input data line 22. At the same time, a light shielding film 25 for defining a frame of the image display area 20 is formed.

Next, the sectional structure of the first embodiment of the liquid crystal panel substrate will be described in detail with reference to FIG.

In FIG. 1, a substrate 1 is formed of a P-type semiconductor substrate (or an N-type semiconductor substrate) such as single-crystal silicon, and an N-type well region having a higher impurity concentration than the substrate 1 is formed on the surface of the substrate 1. 2 (or a P-type well region). The well region 2 is separated from the well region in which elements constituting peripheral circuits such as the column scanning line driving circuit 113, the row scanning line driving circuit 111, and the input data line 22 are formed as shown in FIG. May be formed.

On the well region 2, a field oxide film for device isolation (so-called LOCO) formed on the substrate 1 is formed.
S) 3 is formed. The field oxide film 3 is formed by, for example, selective thermal oxidation. An opening is formed in the field oxide film 3, and a gate electrode 5 made of polysilicon or metal silicide is formed in the center of the inside of the opening via a gate oxide film formed by thermal oxidation of the surface of the silicon substrate. Source / drain regions 6a and 6b formed of impurity layers (hereinafter referred to as doping layers) are formed on the surface of the well region 2 on both sides of the gate electrode 5, and a field effect transistor (hereinafter referred to as FET) is constructed. . Above the source / drain regions 6a and 6b, for example, BPSG (Boron Phosphorus)
First conductive layers 8a and 8b of the first layer counted from the substrate 1 side via a first interlayer insulating film 7 composed of a Silica Grass) film.
Are formed. The first conductive layers 8a and 8b are formed, for example, by forming an aluminum layer or a tantalum layer by sputtering.
It is formed by depositing 00 nm. The first conductive layer 8a is electrically connected to a source region (or a drain region) 6a through a contact hole formed in the first interlayer insulating film 7, and forms a source electrode (or a drain electrode) of the FET. The first conductive layer 8b is electrically connected to a drain region (or a source region) 6b via a contact hole formed in the first interlayer insulating film 7,
A drain electrode (or a source electrode) of the FET is formed.

Above the first conductive layers 8a and 8b, a second interlayer insulating film 9 made of, for example, a silicon oxide film is formed.
A contact hole 9b is formed in the second interlayer insulating film 9. Further above, the second conductive layers 10a and 10b of the second layer counted from the substrate 1 side are formed. The second conductive layers 10a and 10b are formed, for example, by depositing an aluminum layer or a tantalum layer to a thickness of 500 nm by a sputtering method. First conductive layer 8b and second conductive layer 1
0b is electrically connected through a contact hole 9b. The second interlayer insulating film 9 can be formed by, for example, a sputtering method or a plasma CVD method using TEOS (tetraethylorthosilicate). In the present embodiment, the second interlayer insulating film 9 is formed by, for example, depositing a silicon oxide film by TEOS plasma CVD at 1100 nm.

On the other hand, the second conductive layer 10 a
In the region corresponding to the gap, the incident light enters the semiconductor layer side (well region 2) on the substrate 1 and
Has a function of blocking light so as not to leak light. That is, in this region, a planar layout is formed so as to cover the gap between the reflective electrodes 13 without forming a concave portion (ie, without opening a fine hole). On the other hand, in the region corresponding to the reflective electrode 13, the second conductive layer 10a
A concave portion in which holes are irregularly arranged in a burrow shape is formed. The hole preferably has a diameter of 0.5 to 10 μm, and may have any size or several sizes in this range. Further, the shape of the hole is not limited to this embodiment. For example, a polygon such as a regular octagon may be applied.

The step of forming such a hole is performed in the second step.
This can be performed simultaneously with the step of patterning the wiring and the light-shielding film from the conductive layers 10a and 10b by photolithography and etching, which is advantageous in the manufacturing process.

In this embodiment, the second conductive layer 10b
Is directly connected to the first conductive layer 8b through the contact hole 9b, but may be connected using a connection plug made of a refractory metal such as tungsten.

Further, a first silicon oxide film 11a, a second silicon oxide film 11b, a third silicon oxide film 11c, and a silicon nitride film 11d are formed above the second conductive layers 10a and 10b. . In the present embodiment, the first silicon oxide film 11a is made of, for example, TEOS plasma CV.
The second silicon oxide film 11b is formed from a silicon oxide film having a thickness of 750 nm and formed by a polycondensation reaction. The thickness of the second silicon oxide film is not limited to the thickness of the present embodiment, but may be 100 to 500 in order to form an appropriate concave portion in a region corresponding to the reflective electrode 13.
It is desirable to be about nm. Further, similarly to the first silicon oxide film 11a, the third silicon oxide film 11c has a thickness of 500
It is formed by a silicon oxide film of nm. Further, the silicon nitride film 11d is formed, for example, by using nitrogen gas as a carrier.
H4 and NH3 are formed to a thickness of 400 nm by reacting at a temperature of 300 to 450 ° C. by a plasma CVD method. Note that the thickness of the silicon nitride film is not limited to this embodiment, but it is necessary to form an appropriate concave portion in a region corresponding to the reflective electrode 13 and to have a sufficient passivation function. ~ 100
Desirably, it is about 0 nm. Thus, the first silicon oxide film 11a corresponding to the reflection electrode 13 and the second silicon oxide film 11a
Silicon oxide film 11b, third silicon oxide film 11
c, Since the taper of the concave portion formed on the surface of the silicon nitride film 11d has a gentle curved shape, the reflective electrode 13 having good reflection characteristics is formed thereon.

First silicon oxide film 11a, second silicon oxide film 11b, third silicon oxide film 11c, annealing step, and silicon nitride film 11d formed above second conductive layers 10a and 10b. This will be described in detail below.

A. Formation of First Silicon Oxide Film 11a First, tetraethoxysilane (TEOS) and oxygen are added for 30 minutes.
The first silicon oxide film 11a having a thickness of 100 to 200 nm is formed by reacting at 0 to 500 ° C. by a plasma chemical vapor deposition (CVD) method. This silicon oxide film 11a has a higher insulating property than a film grown from SiH4 and has a lower etching rate with respect to an aqueous solution of hydrogen fluoride.
It becomes a dense film.

B. Formation of Second Silicon Oxide Film 11b Next, under a reduced pressure of preferably 2.5 * 10 <2> Pa, more preferably 0.3 * 10 <2> to 2.0 * 10 <2> Pa, using nitrogen gas as a carrier, SiH4 and H2O2 are used.
Is reacted by the CVD method to form the second silicon oxide film 11b. The upper limit of the thickness of the second silicon oxide film 11b is set to such an extent that cracks do not occur in the film. Specifically, the thickness of the second silicon oxide film 11b is preferably set to 100 to 300 nm in order to obtain a gentle uneven shape.

The temperature at which the second silicon oxide film 11b is formed is related to the fluidity of the film at the time of film formation. If the film forming temperature is high, the fluidity of the film is reduced and the flatness is impaired. The temperature during film formation is preferably 0 to 20 ° C, more preferably 0 to 10 ° C.
Is set to

The flow rate of H 2 O 2 is not particularly limited, but is preferably at least twice the flow rate of SiH 4.
From the viewpoint of the uniformity of the film and the throughput, it is desirable to set the flow rate in a gas conversion range of, for example, 100 to 1000 SCCM.

The second silicon oxide film 11b formed in this step is in a state of a silanol polymer, has good fluidity, and has high self-flattening characteristics. Further, the second silicon oxide film 11b has a high hygroscopicity because it contains many hydroxyl groups (-OH).

C. Formation of Third Silicon Oxide Film 11c Next, in the presence of SiH4, PH3 and N2O,
The PSG film (third silicon oxide film) 11c having a thickness of 100 to 600 nm is formed by reacting a gas at a temperature of 300 to 450 ° C. at a high frequency of 200 to 600 kHz by a plasma CVD method. The third silicon oxide film 11c is formed continuously after the formation of the second silicon oxide film 11b in consideration of the high hygroscopicity of the second silicon oxide film 11b, Alternatively, it is desirable that the second silicon oxide film 11b is formed after being stored in an atmosphere containing no moisture.

Further, in the third silicon oxide film 11c, gaseous components such as water and hydrogen contained in the second silicon oxide film 11b are easily and sufficiently desorbed by an annealing process performed later. In consideration of this, it is necessary to be porous. For this purpose, the third silicon oxide film 11c has a temperature of, for example, preferably 450 ° C. or lower, more preferably 300 to 400 ° C., preferably 1 MHz or lower, and more preferably 200 to 600 k.
It is desirable that the film be formed by a plasma CVD method at a Hz and contain impurities such as phosphorus. Since such impurities are contained in the third silicon oxide film 11c, the third silicon oxide film 11c becomes more porous, so that not only the stress on the film can be reduced, but also the gettering effect on alkali ions and the like can be obtained. You can also bring. The concentration of such an impurity is set in consideration of the gettering effect and the like. For example, when the impurity is phosphorus, it is desirable that the impurity be contained at a ratio of 2 to 6% by weight.

In plasma CVD, the use of N 2 O as a compound containing oxygen promotes the desorption of hydrogen bonds in the second silicon oxide film 11b.
As a result, gasified components such as moisture and hydrogen contained in the second silicon oxide film 11b can be more reliably removed.

The thickness of the third silicon oxide film 11c has a role of adjusting the required thickness of the interlayer insulating film,
Considering the function of the N2O plasma for desorbing the hydrogen bond, it is preferably 100 nm or more, more preferably 100 nm or more.
６００600 nm.

D. Annealing Next, annealing is performed at a temperature of 350 to 500 ° C. in a nitrogen atmosphere. By this annealing process, the second silicon oxide film 11b and the third silicon oxide film 11
c is densified and has good insulation and water resistance.
That is, by setting the annealing temperature to 350 ° C. or higher, the condensation polymerization reaction of silanol in the second silicon oxide film 11b is almost completely performed, and the water and hydrogen contained in the film are sufficiently released. A dense film can be formed. Further, by setting the annealing temperature to 500 ° C. or less, the aluminum film forming the first conductive layer 8 is not adversely affected.

E. Formation of silicon nitride film 11d Next, using nitrogen gas as a carrier, SiH4 and NH
3 are reacted at a temperature of 300 to 450 ° C. by a plasma CVD method to form a silicon nitride film 11d. This silicon nitride film 11d has a thickness of, for example, 300 to 1500 nm in consideration of a sufficient passivation function.

When a SOG film is used as a film corresponding to the second silicon oxide film 11b, for example, S
Since the etching rate of the OG film is high, side etching advances, and there is a problem that a film above the SOG film is liable to cause chipping and cracking.

The second conductive layer 10a formed simultaneously with the second conductive layer 10a
The connection between the conductive layer 10b and the reflective electrode 13 is made by contacting the contact holes opened in the first silicon oxide film 11a, the second silicon oxide film 11b, and the third silicon oxide film 11c with a refractory metal such as tungsten. Connecting plug 1
2 is buried by a CVD method or the like.

After the connection plug 12 is formed, the third conductive layer, which is the third layer counted from the substrate 1 side, is formed of, for example, aluminum by a low-temperature sputtering method as the reflective electrode 13.
Thereby, the reflective electrode 1 having a high reflectance of 90% or more.
3 can be formed.

As described above, a reflective electrode having an optimal reflection characteristic can be easily and reproducibly formed, and a reflective type display having a wide viewing angle and a bright high-quality reflective display on a natural ground surface can be obtained. A liquid crystal panel can be provided.

In this embodiment, particularly, as shown in FIG. 1, the presence and absence of the first conductive layers 8a and 8b cause the second conductive layer 10 located above the first conductive layers 8a and 8b to be located.
The step a is formed, and the step is finally formed in the reflective electrode 13 by the step. Therefore, compared to the case where the concave portion is formed in the flat second conductive layer 10a, it is possible to make the surface of the reflective electrode 13 have approximately four levels. Therefore, it is possible to efficiently increase the degree of scattering of the reflected light. In particular, it is possible to avoid problems such as double reflection that may occur when a recess is formed in the flat conductive layer 10a. In this embodiment,
Although a step is formed by using a pattern of wiring or the like formed from the first conductive films 8a and 8b as it is, as in a second embodiment described later, the first conductive films 8a and 8b are formed.
Also, may be positively patterned so as to have a large number of minute uneven portions so that a fine step is formed over one surface of the second conductive layer 10a.

Next, the arrangement of the concave portions in the pixel region and the light-shielding layer in the liquid crystal panel substrate shown in FIG. 1 will be described with reference to FIG.

In FIG. 5A, in the pixel region of the liquid crystal panel substrate of the first embodiment, a reflective electrode having a large number of smooth uneven portions on a second conductive layer 10a having a large number of concave portions formed thereon. 13 is formed, and the second conductive layer 10 a in which the concave portion is not formed is formed so as to cover the gap between the reflective electrodes 13. Further, in the center of each reflection electrode 13, a contact hole 9b serving as a connection portion between the drain electrode (or source electrode) 8b and the second conductive layer 10b as described above.
Is formed adjacent thereto, and a connection plug 12 for connecting the second conductive layer 10b and the reflective electrode 13 is formed.

As shown in FIG. 5B in an enlarged manner, the second conductive layer 10a has a concave portion in which holes are irregularly arranged in a burrow shape in a region B corresponding to the reflective electrode 13. Yes,
Except for the region B, no concave portion is formed in a region corresponding to the gap portion of the reflective electrode 13 so that incident light does not enter the semiconductor layer side on the substrate 1 and the FET does not leak light. In the present embodiment, a circle is applied to the shape of the hole.
The hole preferably has a diameter of 0.5 to 5 μm, and may have any size or several sizes in this range. Further, the shape of the hole is not limited to this embodiment. For example, a polygon such as a regular octagon may be applied.

In FIG. 5B, the reflection electrode 13
Is not particularly limited, but is about 3 μm to have a light shielding function.
m or more.

(Second Embodiment of Liquid Crystal Panel Substrate of the Present Invention) Next, a second embodiment of the liquid crystal panel substrate of the present invention will be described with reference to FIGS. Here, FIG.
FIG. 4 is a cross-sectional view of a second embodiment of a liquid crystal panel substrate on a reflective electrode side of a reflective liquid crystal panel to which the present invention is applied. still,
2, the same components as those shown in FIG. 1 are denoted by the same reference numerals, and the description thereof will be omitted.

As shown in FIG. 2, in the second embodiment, the second conductive layer 10b and the reflection electrode 13 are directly connected via a contact hole without using the connection plug 12 as in the first embodiment. I have. Thus, the present embodiment is very effective in simplifying the process.
Furthermore, in the second embodiment, a first conductive layer 8c is formed in addition to the first conductive layers 8a and 8b. First conductive layer 8c
Is patterned so as to have a portion where a number of minute concave portions are opened so that fine steps are formed over one surface of the second conductive layer 10a. Thereby, compared with the case where the concave portion is formed in the flat second conductive layer 10a, it is possible to make approximately four levels exist over the entire surface of the reflective electrode 13, and it is possible to efficiently scatter the reflected light. Can be increased. Other configurations are the same as those of the first embodiment shown in FIG. In particular, the arrangement of the concave portion of the pixel region and the light shielding layer in the second embodiment are the same as those in the first embodiment shown in FIG.

(Third Embodiment of Liquid Crystal Panel Substrate of the Present Invention) Next, a third embodiment of the liquid crystal panel substrate of the present invention will be described with reference to FIGS. Here, FIG.
FIG. 7 is a cross-sectional view of a third embodiment of a liquid crystal panel substrate on a reflective electrode side of a reflective liquid crystal panel to which the present invention is applied. still,
3, the same components as those shown in FIG. 1 are denoted by the same reference numerals, and the description thereof will be omitted.

As shown in FIG. 3, in the third embodiment, as in the first embodiment, the second conductive layer 10b as a relay wiring is used.
, The drain electrode (or source electrode) 8 b and the reflective electrode 13 are electrically connected by the connection plug 12. A high melting point metal such as tungsten is used for the connection plug 12.

At this time, as shown in FIG. 6, the concave portions of the second conductive layer 10a in which the holes are irregularly arranged in the form of burrows are in contact with the periphery of the contact holes where the connection plugs 12 are formed in each pixel. Since it can be formed over the entire area of the pixel display area 20 except for the gap between the electrodes 13, it is possible to form a reflective electrode having more optimal reflection characteristics.

In the third embodiment, as shown in FIG. 3, the interlayer insulating film 9 is subjected to a flattening process. By performing the flattening process as described above, the surface of the reflective electrode 13 can be made uneven by the concave portions formed in the second conductive layer 10a without depending on the steps or unevenness in the base of the second conductive layer 10a. One surface of the electrode 13 can have a uniform uneven shape. Other configurations are the same as those of the first embodiment shown in FIG.

(Fourth Embodiment of Liquid Crystal Panel Substrate of the Present Invention) Next, a fourth embodiment of a liquid crystal panel substrate of the present invention will be described with reference to FIGS. Here, FIG.
FIG. 9 is a sectional view of a fourth embodiment of a liquid crystal panel substrate on the reflective electrode side of a reflective liquid crystal panel to which the present invention is applied. still,
In FIG. 4, the same components as those shown in FIG. 1 are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIG. 4, in the fourth embodiment, unlike the first embodiment, the substrate 1 'is made of quartz or a non-alkali glass substrate, and a single crystal or polycrystal is formed on the substrate 1'. A crystalline or amorphous silicon film (a layer for forming the source / drain regions 6a 'and 6b') is formed. On this silicon film, for example, a silicon oxide film formed by thermal oxidation and a nitride film deposited by CVD are used. A gate insulating film made of an insulating film having a two-layer structure of silicon is formed. The silicon film is doped with an N-type impurity (or a P-type impurity) to form source / drain regions 6a 'and 6b' of the TFT, and a gate electrode 5 of the TFT is formed on the gate insulating film. It is formed of polysilicon or metal silicide. The other configuration is the same as that of the first embodiment. In particular, the first electrode is formed on the gate electrode 5 as in the case of the first embodiment.
Interlayer insulating film 7, first conductive layers 8a, 8b, second interlayer insulating film 9, second conductive layers 10a, 10b, first silicon oxide film 11a, second silicon oxide film 11b, third silicon oxide film 11c, silicon nitride film 11d and reflection electrode 13
Are laminated in this order. Further, regarding the arrangement of the concave portion of the pixel region and the light shielding layer in the fourth embodiment,
This is the same as the case of the first embodiment shown in FIG.

Although FIG. 4 shows a top gate type in which the gate electrode 5 is located above the channel, a gate electrode is formed first, and a silicon film serving as a channel is disposed on a gate insulating film. It may be a gate type.

In the first to fourth embodiments described above, the second conductive layer 10a is formed in an uneven shape by forming a hole in the second conductive layer 10a, that is, by forming a concave portion. (See FIG. 1 to FIG. 4), the second conductive layer 10a is formed by forming protrusions on the second conductive layer or by forming the second conductive layer into a large number of fine protrusions.
May be formed in an uneven shape. Also in this case, it is possible to form the second conductive layer in an uneven shape by photolithography and etching simultaneously with the step of forming the second conductive layer 10b.

(Description of the Pixels of the Liquid Crystal Panel of the Present Invention and the Driving Circuit Thereof) Next, the reflection electrodes configured as in the above-described embodiments are used as pixel electrodes to drive each pixel. An example of a driver circuit provided is described with reference to FIGS. Here, FIG. 7 is a block diagram showing an example of a pixel of the liquid crystal panel of the present invention and a driving circuit thereof, and FIG. 8 is a circuit diagram showing the driving circuit of FIG.
FIG. 3 is a circuit diagram in the case of being configured with S transistors.

In FIG. 7, in the image display area, row scanning lines 110-n (n is a natural number indicating the row of the row scanning line) and column scanning line 112-m (m is a natural number indicating the column of the column scanning line) Are arranged in a matrix, and a driving circuit of each pixel is arranged at an intersection of the scanning lines. In the image display area, column data lines 115-d (d is a natural number indicating a column of the column data lines) branched from the input data lines 114 along the column scanning lines 112-m are also arranged. A row scanning line driving circuit 111 is arranged in a peripheral area on the row side of the image display area, and a column scanning line driving circuit 113 is arranged in a peripheral area on the column side of the image display area.

The row scanning line driving circuit 111 is controlled by the row scanning line driving circuit control signal 120, and a selection signal is output to the selected row scanning line 110-n. Unselected row scanning lines are set to a non-selection potential. Similarly, the column scanning line driving circuit 11 is controlled by the column scanning line driving circuit control signal 121.
3 is controlled, a selection signal is output to the selected column scanning line 112-m, and an unselected column scanning line is set to a non-selection potential. Which row scanning line and which column scanning line to select is determined by the control signals 120 and 121. That is, the control signals 120 and 121 are address signals that specify the selected pixel.

The switching control circuit 109 arranged near the intersection of the selected row scanning line 110-n and the selected column scanning line 112-m receives the selection signal of both scanning lines, and outputs an ON signal. Row scanning line 110-n and column scanning line 11
When at least one of 2-m is not selected, an off signal is output. That is, an ON signal is output only from the switching control circuit 109 of the pixel located at the intersection of the selected row scanning line and column scanning line, and the other switching control circuits 1
09 outputs an off signal. In the present embodiment, the liquid crystal pixel drive circuit 101 is controlled by the ON / OFF signal of the switching control circuit 109.

Next, the configuration and operation of the liquid crystal pixel drive circuit 101 will be described with reference to FIG.

As shown in FIG. 7, the liquid crystal pixel driving circuit 10
1 includes a switching circuit 102, a memory circuit 103, and a liquid crystal pixel driver 104.

The switching circuit 102 is turned on by the ON signal of the switching control circuit 109 and is turned off by the OFF signal. When the switching circuit 102 is turned on, the column data line 1 connected thereto is turned on.
The 15-d data signal is written to the memory circuit 103 via the switching circuit 102. On the other hand, the switching circuit 102 is turned off by the off signal of the switching control circuit 109 and holds the data signal written in the memory circuit 103.

The data signal held in the memory circuit 103 is supplied to a liquid crystal pixel driver 104 arranged for each pixel. The liquid crystal pixel driver 104 supplies the first voltage 116 supplied to the first voltage signal line 118 or the second voltage 117 supplied to the second voltage signal line 119 according to the level of the supplied data signal. One of the liquid crystal pixels 10
5 to the reflective electrode 13. The first voltage 116 is a voltage for bringing the liquid crystal pixel 105 to a black display state when the liquid crystal panel performs a normally white display, while the second voltage 117 is a voltage for bringing the liquid crystal pixel 105 to a white display state. .

When the data signal held in the memory circuit 103 is at the H level, in the liquid crystal pixel driver 104, the gate connected to the first voltage signal line 118 for displaying the liquid crystal in black in the case of normally white display is turned on. State, and the first voltage 11 is applied to the reflective electrode 13 in each pixel.
6 is supplied and the reference voltage 1 supplied to the counter electrode 108 is
The liquid crystal pixel 105 enters a black display state due to the potential difference from the pixel 22. Similarly, when the held data signal is at the L level, the gate connected to the second voltage signal line 119 in the liquid crystal pixel driver 104 becomes conductive, and the second voltage 117 is supplied to the reflective electrode 13 so that the liquid crystal is supplied. The pixel 105 enters a white display state.

With the above configuration, the power supply voltage, the first voltage 116, the second voltage 117, and the reference voltage 122 can be driven at approximately the logic voltage, and when the rewriting of the screen display is not necessary, the data holding of the memory circuit 103 is performed. Since the display state can be maintained by the function, almost no current flows.

The liquid crystal pixel 105 is a reflective electrode to which either one of the first voltage 116 or the second voltage 117 output from the liquid crystal pixel driver 104 is selected and supplied according to the held data signal. 13 is provided for each pixel, a potential difference between the two electrodes is applied to a liquid crystal layer 107 interposed between the reflective electrode 13 and the counter electrode 108, and a black display state is set according to a change in the orientation of liquid crystal molecules according to the potential difference. (Also called an ON display state) and a white display state (also called an OFF display state). As described above, the liquid crystal panel is provided between the substrate 1 such as a semiconductor substrate and the substrate 35 such as glass.
7 are enclosed and sandwiched (see FIG. 14), the reflective electrodes 13 are arranged in a matrix on the substrate 1, and the liquid crystal pixel drive circuit 101, the row scanning lines 110-n,
A column scanning line 112-m, a column data line 115-d, a row scanning line driving circuit 111, a column scanning line driving circuit 113, and the like are formed (see FIG. 13). Each pixel applies a voltage to each pixel between the reflective electrode 13 and the counter electrode 33, supplies a voltage to the liquid crystal layer 37 of each pixel interposed therebetween, and adjusts the orientation of liquid crystal molecules for each pixel. Change.

Next, an example of a specific circuit configuration such as the liquid crystal pixel drive circuit configured as described above will be described.

As shown in FIG. 8, in this embodiment,
The switching control circuit 109 can be configured by a logic circuit of a NOR gate circuit 109-1 having a CMOS transistor configuration and an inverter 109-2 having a CMOS transistor configuration. The NOR gate circuit 109-1 outputs a positive logic ON signal when both inputs have a negative logic selection signal, and outputs a negative logic ON signal by the inverter 109-2. The switching circuit 102 is a CM
Transmission gate 10 of OS transistor configuration
2-1. The transmission gate 102-1 is turned on based on the ON signal of the switching control circuit 109, connects the column data line 115 to the memory circuit 103, and is turned off based on the OFF signal. The memory circuit 103 can have a configuration in which a clocked inverter 103-1 having a CMOS transistor configuration and an inverter 103-2 having a CMOS transistor configuration are connected in a feedback manner. The data signal is sent from the switching circuit 102 to the memory circuit 1 by the ON signal of the switching control circuit 109.
03, is inverted by the inverter 103-2, and the output is fed back by the clocked inverter 103-1 operated by the OFF signal of the switching control circuit 109 to hold the data signal. The liquid crystal pixel driver 104 can be constituted by transmission gates 104-1 and 104-2 having two CMOS transistors. When the data signal held in the memory circuit 103 is H
In the case of the level, in the liquid crystal pixel driver 104, the transmission gate 104-1 connected to the first voltage signal line 118 for displaying the liquid crystal black in the case of the normally white display becomes conductive, and the first electrode is connected to the reflective electrode 13. The voltage 116 is supplied, and the liquid crystal pixel 105 enters a black display state due to a potential difference from the reference voltage 122 supplied to the counter electrode 108. Similarly, when the held data signal is at the L level, the transmission gate 104-2 connected to the second voltage signal line 119 is turned on, the second voltage 117 is supplied to the reflective electrode 13, and the liquid crystal pixel 105
Becomes a white display state.

Next, FIGS. 9 to 12 show another example of a driving circuit provided in each pixel configured to drive the reflection electrode configured as in each of the above embodiments as a pixel electrode for each pixel. It will be described with reference to FIG. Here, FIG.
FIG. 10 is a circuit diagram showing another example of a pixel of the liquid crystal panel of the present invention and a driving circuit thereof, and FIG. 10 is a circuit diagram showing a detailed configuration of one of the liquid crystal pixel driving circuits.
FIG. 1 is a plan view showing the layout pattern, and FIG.
FIG. 2 is an enlarged plan view showing a portion related to one liquid crystal pixel driving circuit among them. 9 to 12, the same components as those shown in FIGS. 7 and 8 are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

The configuration example of the driving circuit shown in FIG. 9 is particularly suitable for a color liquid crystal panel, and one switching control circuit 109 'sequentially supplies R, G, B, R, G, and B in the row direction. The arranged six liquid crystal pixel driving circuits 101 'are connected. Then, these six liquid crystal pixel driving circuits 1
01 ′ via the input data line 114 ′, the six serial-to-parallel converted (in order, R,
The image signals (for G, B, R, G, B) are configured to be simultaneously input under the control of the same switching control circuit 109 ′ (that is, as a driving circuit of the same address). On the reflective electrode 13 connected to each liquid crystal pixel drive circuit 101 ', a color filter of each color (R, G or B) is formed at an opposing position on the substrate 1 or the substrate 2, and six color filters are formed. The liquid crystal pixel drive circuit enables display of a color corresponding to a color image signal in each pixel.

In this configuration example, the switching control circuit 109 'is composed of a NOR gate circuit having a CMOS transistor configuration and an inverter having a CMOS transistor configuration, as shown in FIG.
The clock signal CK is supplied to the clock input terminals of the six liquid crystal pixel driving circuits 101 ′ via the
1 ′ inverted clock signal / CK
Is provided.

Further, in the circuit shown in FIG. 9, one liquid crystal pixel driving circuit 101 'is as shown in the symbol diagram of FIG. 10A, and a specific circuit configuration corresponding to this is shown in FIG. ,
For example, as shown in FIG. 10B, similarly to that shown in FIG. 8, a transmission gate having a CMOS transistor configuration, a clocked inverter having a CMOS transistor configuration, and an inverter are provided, and an input data line is provided at the timing of a clock signal CK. The first voltage 116 or the second voltage 117 is applied to the reflective electrode 13 according to the data (DATA) supplied from 114 ′ and held.

Therefore, the operation of the drive circuit shown in FIG. 9 is the same as that shown in FIGS. 7 and 8, except that a plurality of reflective electrodes 13 are driven simultaneously.

Here, an example of a specific planar layout pattern of the drive circuit shown in FIG. 9 is shown in FIG. 11, and a portion related to one liquid crystal pixel drive circuit 101 'is shown in FIG.
It is shown enlarged.

As shown in FIGS. 11 and 12, below each pixel electrode 13, a liquid crystal pixel driving circuit 101 'and various wirings connected thereto are arranged. In particular, in FIG. 12, the input data line 114 ', the row scan line 110, the column scan line 112, the clock signal line 125, the inverted clock signal line 1
26, ground line (GND), predetermined power supply line (Vc
c), the first voltage signal line 118 and the second voltage signal line 11
Most of the various wirings such as 9 are the first conductive layer (in the figure,
Layers formed in shaded areas)
Is formed from. In a portion where these wirings need to intersect, a relay wiring portion is mainly formed from the same conductive polysilicon film as the gate electrode (a film formed in a region indicated by no hatching in the figure). Is formed.
In the drawings, contact holes for electrically connecting different conductive layers and semiconductor layers are indicated by black squares, and connection plugs may or may not be arranged in each contact hole. In each transistor,
A gate electrode made of a conductive polysilicon film is opposed to a P-type or N-type semiconductor film (a film formed in a region indicated by oblique lines in the drawing) via an insulating film (not shown). Further, in the approximate center of the reflective electrode 13, the first conductive layer (drain or source electrode) and the reflective electrode 13 are formed by the second conductive layer 10b and the connection plug 12, as shown in FIG.
And are connected.

As can be seen from FIGS. 11 and 12, the second
Since it is sufficient that the conductive layer 10b is formed in a small area in plan view, the second conductive layer can be formed to be spread over most of the area on the substrate.
The second conductive layer 10a not shown in FIG.
By forming the “reflection pattern” in a concavo-convex shape, it is possible to provide the reflective electrode 13 with good reflection characteristics in most areas on the substrate. Further, since various wirings are formed using the first conductive layer, the presence and absence of the first conductive layer 8a are used to form a surface of the reflective electrode 13 via the second conductive layer 10a as described above. A step can be provided, and the reflection characteristics can be further improved. In FIG. 12, a planar region where the first conductive layer 8a is not formed (that is, a region where no wiring is formed)
By positively patterning the first conductive layer 8c as in the above-described second embodiment (see FIG. 2), uniform and fine steps can be given to the second conductive layer 10a. .

(Description of the Structure of the Liquid Crystal Panel of the Present Invention) Next, the entire structure of the liquid crystal panel provided with the liquid crystal panel substrate of each of the above-described embodiments will be described again with reference to FIGS.
This will be described in more detail with reference to FIG. FIG. 13 is a plan view of the entire liquid crystal panel, and FIG.
It is sectional drawing.

As shown in FIG. 13, in the liquid crystal panel 30, as a circuit for driving the pixels, first, the frame area covered with the light-shielding film 25 is provided in the row scanning line driving circuit 11 as described above.
1, a column scanning line driving circuit 113 and an input data line 22 are provided.
In the lower part, as described above, the switching control circuit 109, the switching circuit 102, the memory circuit 103, and the liquid crystal pixel driver 104 are provided. FIG.
And a third conductive layer formed in the same step as the reflective electrode 13 shown in FIG. 1 so that a predetermined potential such as an LC common electrode potential is applied. The pad area 26
Are formed with pads or terminals used to supply a power supply voltage.

As shown in FIG. 14, a substrate 32 made of glass, ceramic, or the like is adhered to the back surface of the substrate 1 with an adhesive. At the same time, on the front side of the substrate 1, an incident side glass substrate 35 having a counter electrode 33 made of a transparent conductive film (ITO) to which an LC common electrode potential is applied is arranged at an appropriate interval. FIG.
In a gap bonded by the seal material 36 formed in the seal material formation region 36 of FIG.
The liquid crystal panel 30 is filled with a liquid crystal (Nematic) type liquid crystal or an SH (Super Homeotropic) type liquid crystal in which liquid crystal molecules are substantially vertically aligned in a state where no voltage is applied.
The position where the sealing material 36 is provided is set so that the pad region 26 is located outside the sealing material 36 for inputting a signal from outside.

The light shielding film 25 on the peripheral circuit is configured to face the counter electrode 33 with the liquid crystal 37 interposed. When the LC common electrode potential is applied to the light-shielding film 25, the LC common electrode potential is applied to the counter electrode 33, so that no DC voltage is applied to the liquid crystal portion interposed therebetween. Therefore, in the case of the TN type liquid crystal, the liquid crystal molecules are always kept twisted by about 90 °, and in the case of the SH type liquid crystal, the liquid crystal molecules are always kept in a vertically aligned state. That is, the liquid crystal 37 is not turned on / off or has a white spot due to the potential change of the light shielding film 25 in the region facing the light shielding film 25. More generally, a light-shielding film that is disposed in a region surrounded by the sealant 37 and made of the first, second, or third conductive layers facing the liquid crystal 37 (that is, any light-shielding film formed not for wiring but for light-shielding) 1H (1H) of the normally black mode and the normally white mode.
For example, according to the inversion driving method such as inversion such as (horizontal scanning period) inversion and 1S (1 vertical scanning period) inversion, for example, the counter electrode 3
By setting the same potential as 3 or the same potential as the predetermined power supply potential, it is preferable to constantly fix the opposing liquid crystal 37 portion to black or white so that the liquid crystal 37 does not have white spots and has high contrast. At the same time, the liquid crystal 37 is
It is preferable not to deteriorate.

In this embodiment, in particular, the strength of the substrate 1 made of a semiconductor substrate is significantly increased because the substrate 32 made of glass or ceramic is bonded to the back surface of the substrate 1 by an adhesive. As a result, after bonding the substrate 32 to the substrate 1, the opposing substrate (glass substrate 35)
Is advantageous in that the gap of the liquid crystal layer becomes uniform over the entire panel.

On the substrate 1 of the liquid crystal panel 30 in each of the embodiments described with reference to FIGS.
A sampling circuit that samples an image signal at a predetermined timing, a precharge circuit that writes a precharge signal of a predetermined potential at a timing preceding the image signal for each data line to reduce a writing load on the data line of the image signal, Various circuits such as an inspection circuit for inspecting the quality, defects, and the like of the liquid crystal device at the time of shipment may be additionally provided according to a method of driving pixels.

In each of the embodiments described above with reference to FIGS. 1 to 14, for example, a TN
(Twisted Nematic) mode, VA (Vertically Aligne)
d) Mode, PDLC (Polymer Dispersed Liquid Crysta)
l) A polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction according to an operation mode such as a mode or a normally white mode / normally black mode. In a predetermined area facing the reflective electrode 13, RGB
May be formed on the counter substrate 35 together with the protective film. Alternatively, it is also possible to form a color filter layer with a color resist or the like on the reflection electrodes 13 corresponding to RGB on the substrate 1. If you do this,
The liquid crystal panel of each embodiment can be applied to a color liquid crystal device such as a direct-view or reflection type color liquid crystal television. Furthermore, a dichroic filter that produces RGB colors using light interference may be formed by depositing a number of interference layers having different refractive indexes on the counter substrate 35. According to the counter substrate with the dichroic filter, a brighter color liquid crystal device can be realized.

(Description of Electronic Apparatus Using Liquid Crystal Panel of the Present Invention) Next, an example of an electronic apparatus using the reflective liquid crystal panel of the present invention as a display device will be described.

FIG. 15A is a perspective view showing a mobile phone. The mobile phone 1000 includes a liquid crystal display unit 1001 using the reflective liquid crystal panel of the present invention.

FIG. 15B is a perspective view showing a wristwatch-type electronic device. The timepiece 1100 is provided with a liquid crystal display unit 1101 using the reflective liquid crystal panel of the present invention.
Since this liquid crystal panel has higher definition pixels than a conventional clock display unit, it can also display television images, and can realize a wristwatch type television.

FIG. 15C is a perspective view showing a portable information processing device such as a word processor or a personal computer. The information processing apparatus 1200 includes an input unit 1202 such as a keyboard, a liquid crystal display unit 1206 using a reflective liquid crystal panel of the present invention, and an information processing apparatus main body 1204.

Since each electronic device is a battery-driven electronic device, using a reflective liquid crystal panel without a light source lamp can extend the battery life. Also,
Since the peripheral circuit can be built in the panel substrate as in the present invention, the number of components can be significantly reduced, and the weight and size can be further reduced.

In addition to the electronic equipment shown in FIG. 15, a liquid crystal television, a viewfinder type or a monitor direct-view type video tape recorder, a car navigation device, an electronic organizer, a calculator, a word processor, an engineering workstation (EWS), Videophone, POS terminal,
Electronic devices such as devices with touch panels, etc.
Therefore, a liquid crystal panel using the liquid crystal panel substrate of the fourth embodiment can be applied.

The present invention is not limited to the above-described embodiments, and can be implemented by appropriately changing the embodiments without changing the gist of the present invention.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view in a pixel region of a first embodiment of a liquid crystal panel substrate on a reflective electrode side constituting a reflective liquid crystal panel to which the present invention is applied.

FIG. 2 is a cross-sectional view in a pixel region of a second embodiment of a liquid crystal panel substrate on a reflective electrode side that constitutes a reflective liquid crystal panel to which the present invention is applied.

FIG. 3 is a cross-sectional view of a liquid crystal panel substrate on a reflective electrode side constituting a reflective liquid crystal panel to which the present invention is applied, in a pixel region of a third embodiment.

FIG. 4 is a cross-sectional view in a pixel region of a fourth embodiment of a liquid crystal panel substrate on a reflective electrode side that constitutes a reflective liquid crystal panel to which the present invention is applied.

FIG. 5 is a plan view (FIG. 5A) showing an arrangement of a concave portion and a light-shielding layer in a pixel region in the first, second, and fourth embodiments; FIG. 5B).

FIG. 6 is a plan view showing an arrangement of a concave portion of a pixel region and a light shielding layer in a third embodiment.

FIG. 7 is a block diagram illustrating an example of a pixel of a liquid crystal panel configured using the liquid crystal panel substrate of each embodiment, a driving circuit thereof, and the like.

FIG. 8 is a circuit diagram in which the drive circuit based on FIG. 7 is configured by CMOS transistors.

FIG. 9 is a circuit diagram showing a configuration example of a driving circuit for a pixel region in each embodiment in the case of a color liquid crystal panel.

10 is a symbol diagram (FIG. 10A) of one liquid crystal pixel driving circuit included in the driving circuit of FIG. 9 and a circuit diagram showing a specific circuit configuration corresponding to the symbol diagram (FIG. 10B). It is.

11 is a plan view showing a layout pattern of the drive circuit of FIG.

FIG. 12 is an enlarged plan view showing a portion related to one liquid crystal pixel drive circuit in the layout pattern of the drive circuit in FIG. 11;

FIG. 13 is a plan view of a reflective liquid crystal panel formed using the liquid crystal panel substrate of each embodiment.

14 is a sectional view taken along line A-A 'of FIG.

15 is a perspective view of a mobile phone using the reflective liquid crystal panel of each embodiment (FIG. 15 (a)), a perspective view of a wristwatch type television (FIG. 15 (b)), and a perspective view of a personal computer (FIG. 15). (C)).

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Well region 3 ... Field oxide film 5 ... Gate electrode 6a, 6b ... Source / drain region 7 ... First interlayer insulating film 8a, 8b ... First conductive layer (source / drain) Electrode) 9 Second interlayer insulating film 9b Contact hole 10a, 10b Second conductive layer 11a First silicon oxide film 11b Second silicon oxide film 11c Third silicon oxide Film 11d Silicon nitride film 12 Connection plug 13 Reflective electrode (third conductive layer) 20 Pixel display area 22 Input data line 25 Light shielding film (third conductive layer) 26 Pad Region 32 substrate 33 counter electrode 35 glass substrate 36 sealing material 37 liquid crystal 101 liquid crystal pixel driving circuit 102 switching circuit 103 memory circuit 104 liquid crystal image Elementary driver 105 Liquid crystal pixel 109 Switching control circuit 110 Row scanning line 111 Row scanning line driving circuit 112 Column scanning line 113 Column scanning line driving circuit 114 Input data line 115 Column data line 116 First voltage 117 Second voltage 118 First voltage signal line 119 Second voltage signal line 120 Control signal for row scanning line drive circuit 121 Column Scan line drive circuit control signal 122 Reference voltage 125 Clock signal line 126 Inverted clock signal line 1000 Cellular phone 1001 Liquid crystal display 1100 Clock 1101 Liquid crystal display 1200 Information Processing unit 1202 Input unit 1204 Information processing unit main unit 1206 Liquid crystal display unit

 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 2H090 HA04 HA06 HA08 HB03X HB04X HC03 HD03 HD06 JB04 LA01 LA04 LA05 LA20 2H092 JA25 JA46 JB08 JB56 JB58 KA03 KA04 KA07 KB13 KB22 KB25 MA05 MA08 NA01 NA19 PA09 PA12 5F0BF02 BC23 BF29 BH01 5F110 BB01 BB04 CC02 CC07 DD02 DD03 DD05 EE05 EE09 FF02 FF03 FF09 FF23 FF29 GG12 GG13 GG15 HL03 HL04 HL23 NN02 NN03 NN04 NN22 NN24 NN55 NN66

Claims (24)

[Claims] A substrate, a transistor, a reflective electrode connected to the transistor, and an interlayer insulating film below the reflective electrode, wherein the interlayer insulating film is a first silicon oxide film, A second silicon oxide film formed by a polycondensation reaction between a silicon compound and hydrogen peroxide on the silicon oxide film of the above, and a third silicon oxide film formed on the second silicon oxide film A substrate for a liquid crystal panel. 2. The semiconductor device according to claim 1, further comprising a concave / convex film formed in a concave / convex shape and laminated in a region corresponding to the reflective electrode via an interlayer insulating film below the reflective electrode. LCD panel substrate. 3. The first silicon oxide film has a thickness of 5
The liquid crystal panel substrate according to claim 1, wherein the thickness is from 0 to 500 nm. 4. The liquid crystal panel substrate according to claim 1, wherein the third silicon oxide film is porous. 5. A light-shielding film which is formed of the same film as the uneven film and shields a gap between the reflective electrodes when viewed from a direction perpendicular to the substrate.
The liquid crystal panel substrate according to claim 4. 6. The liquid crystal panel according to claim 1, wherein the concavo-convex film is formed of one conductive film, and further includes a wiring formed from the same film as the one conductive film. Substrate. 7. The method according to claim 1, wherein the one conductive film and the substrate are
Another conductive film is further laminated via an interlayer insulating film,
3. The liquid crystal according to claim 2, wherein a step is generated in the uneven film formed of the one conductive film portion located above the other conductive film due to the presence and absence of the other conductive film. Panel substrate. 8. The irregularity film according to claim 1, wherein the irregularity film is formed by irregularly forming a large number of fine holes in a flat film. 4. The liquid crystal panel substrate according to 1. 9. The method according to claim 1, wherein the interlayer insulating film is formed by a chemical mechanical polishing (CMP).
2. The liquid crystal panel substrate according to claim 1, wherein the substrate is smoothed by mechanical polishing. 10. The liquid crystal panel substrate according to claim 1, wherein the substrate is a semiconductor substrate. 11. The liquid crystal panel substrate according to claim 10, wherein the substrate is made of single crystal silicon. 12. The liquid crystal panel substrate according to claim 1, wherein the substrate is a transparent substrate. 13. The liquid crystal panel substrate according to claim 12, wherein the substrate is formed of glass. 14. The method for manufacturing a liquid crystal panel substrate according to claim 1, wherein the step of forming the interlayer insulating film includes at least the following steps (a) to (d). Manufacturing method for a liquid crystal panel substrate. (A) reacting a silicon compound with at least one of oxygen and a compound containing oxygen by a chemical vapor deposition method to form a first silicon oxide film; and (b) forming a silicon compound and hydrogen peroxide. Forming a second silicon oxide film by reacting by a chemical vapor deposition method, (c) 3
A step of performing an annealing treatment at a temperature of 50 to 500 ° C., and (d) forming a third silicon oxide film by reacting the silicon compound with at least one of oxygen and a compound containing oxygen by a chemical vapor deposition method Process. 15. After the step (d), a silicon compound and at least one of nitrogen and a compound containing nitrogen are provided.
The method for manufacturing a substrate for a liquid crystal panel according to claim 14, further comprising: (e) forming a silicon nitride film by reacting a compound containing impurities by a chemical vapor deposition method. 16. The silicon compound used in the step (b) is monosilane, disilane, SiH 2 Cl 2, Si
The method for producing a substrate for a liquid crystal panel according to claim 14 or 15, wherein the method is at least one selected from an inorganic silane compound such as F4 and CH3SiH3 and an organic silane compound such as tripropylsilane and tetraethoxysilane. 17. The method according to claim 14, wherein the step (b) is performed by a low pressure chemical vapor deposition method at a temperature of 0 to 20 ° C., wherein the silicon compound is an inorganic silane compound.
A method for manufacturing a liquid crystal panel substrate according to claim 16. 18. The method according to claim 14, wherein the step (b) is performed by a low pressure chemical vapor deposition method under a temperature condition of 100 to 150 ° C., wherein the silicon compound is an organic silane compound. Of manufacturing a liquid crystal panel substrate. 19. The step (a) is performed at 300 to 500 ° C.
The method for manufacturing a substrate for a liquid crystal panel according to claim 14, wherein the method is performed by a plasma enhanced chemical vapor deposition method under the following temperature conditions. 20. The silicon compound used in the step (a) is an organic silane compound.
9. The method for manufacturing a liquid crystal panel substrate according to item 8. 21. A liquid crystal panel comprising a liquid crystal sandwiched between the liquid crystal panel substrate according to claim 1 and a transparent counter substrate. 22. An electronic apparatus comprising the liquid crystal panel according to claim 21. 23. Manufacturing of a substrate for a liquid crystal panel having a plurality of scanning lines and a plurality of data lines on a substrate, a transistor connected to the scanning line and the data line, and a reflective electrode connected to the transistor. A method, comprising: forming a concave-convex uneven film in a region corresponding to the reflective electrode on the substrate; and forming the reflective electrode on the concave-convex film via an interlayer insulating film. A first silicon oxide film, a second silicon oxide film formed on the first silicon oxide film and formed by a polycondensation reaction between a silicon compound and hydrogen peroxide, and A method for manufacturing a substrate for a liquid crystal panel, comprising a third silicon oxide film. 24. A substrate, comprising: a plurality of row scanning lines and a plurality of column scanning lines crossing each other; a plurality of data lines arranged along the column scanning lines; a voltage signal line for supplying a voltage signal; A plurality of pixel driving circuits arranged corresponding to intersections of the row scanning lines and the column scanning lines, wherein the pixel driving circuit is turned on when a pixel electrode and the row scanning line are selected, A switching circuit that is non-conductive when at least one of a row scanning line and a column scanning line is not selected; and a data signal of the data line when the switching circuit is conductive, and when the switching circuit is non-conductive. A memory circuit for holding a data signal, and outputting the first voltage signal from the voltage signal line to the pixel electrode when the data signal held in the memory circuit is at a first level; A pixel driver for outputting the second voltage signal from the voltage signal line to the pixel electrode, wherein the pixel driver includes a transistor, a reflective electrode connected to the transistor, and an interlayer below the reflective electrode. An insulating film, wherein the interlayer insulating film is a first silicon oxide film, and a second silicon oxide film formed on the first silicon oxide film by a polycondensation reaction between a silicon compound and hydrogen peroxide. A liquid crystal panel substrate formed of a third silicon oxide film formed on the second silicon oxide film.