JP2001074670A - Inspection system of semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a small-sized inspection system easy to handle capable of simply inspecting the internal state of a semiconductor element sealed by a transparent or opaque synthetic resin material. SOLUTION: A semiconductor element 23 to be inspected of which the package comprises a synthetic resin material is positioned within the imaging region of a CCD imaging apparatus 34 equipped with a CCD camera 32 wherein an infrared transmission filter 31 is arranged in front of a CCD 30 and irradiated with infrared rays from the rear thereof by an infrared light source 27 having a plurality of infrared LEDs emitting infrared rays and infrared rays transmitted through the semiconductive element 23 are caught by the CCD imaging apparatus 34 and, further, the silhouette image of the semiconductor element 23 is formed on the basis of the signal from the CCD imaging apparatus 34 by an image processor 35 and displayed to inspect the internal state of the semiconductor element 23.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element inspection system suitable for inspecting an internal state of a semiconductor element sealed with a synthetic resin material.

[0002]

2. Description of the Related Art The prior art will be described with reference to FIGS. FIG. 6 is a configuration diagram showing a schematic configuration, and FIG.
FIG. 8 is a characteristic diagram illustrating sensitivity characteristics of the D imaging device, and FIG. 8 is a display diagram of a semiconductor element displayed on the image processing device.

[0006] In FIG. 6 to FIG.
Is composed of a light source unit 2 that emits inspection light, and an inspection unit 4 that is opposed to the light source unit 2 such that a semiconductor element 3 to be inspected is positioned therebetween. Light source 2
Is composed of a light source 7 in which a diffusion filter 6 is arranged on the front surface of a fluorescent lamp 5 so that parallel light is emitted, and a power source 8 for turning on the light source 7.

[0006] The inspection unit 4 is provided with a CCD (Charge).
A CCD camera 11 having an infrared light cut filter 10 disposed in front of a coupled device 9;
A CCD image pickup device 13 including a camera control unit 12 that receives a signal from the D camera 11 and outputs an image signal, and obtains an image signal from the CCD image pickup device 13 to perform image processing to form an image of the semiconductor element 3 to be inspected. And an image processing device 14 for displaying on a display unit (not shown). Further, the CCD camera 11 has a sensitivity characteristic of the CCD 9 shown in FIG.
By arranging an infrared light cut filter 10 for cutting infrared light having a wavelength of 750 nm or more on the front surface of the CCD 9, a visible light region indicated by oblique lines in FIG. Only the X light is incident on the CCD 9.

On the other hand, the semiconductor element 3 to be inspected disposed between the light source 7 and the CCD camera 11 is, for example, a photo
Like the light receiving portion of the interrupter element, a semiconductor pellet (not shown) is fixed to a predetermined position of the lead frame, not shown, and the semiconductor pellet is connected to a predetermined portion of the lead frame by a bonding wire. It is sealed in a package.

In the inspection of the internal state of the semiconductor device 3 by the inspection system 1 configured as described above, the light emitted from the light source 7 is projected on the semiconductor element 3 and the semiconductor element 3 is inspected.
Of the semiconductor device 3 captured by the CCD camera 11, image-processed, and displayed on the display unit of the image processing device 14.
Is performed by, for example, visually observing the shadow image 3a.

However, in such a conventional technique,
When the package is colorless and transparent, the light from the light source 7 passes through the package and reaches the internal structure, and the silhouette image at that time can be captured by the CCD camera 11, but the package is colored and opaque. In some cases, a silhouette image of the internal structure could not be captured, and the internal state could not be inspected. In other words, in the case where the package is colored and opaque, for example, the one that performs switching operation by light, the package is formed of a visible light cut type epoxy resin for the purpose of preventing disturbance light, and such a package is used. If there is, the image 3a displayed on the display unit of the image processing device 14 as shown in FIG.
Is only a silhouette image showing the outer shape of the semiconductor element 3, and the internal state is not displayed.

[0008] The inspection of the internal state of a semiconductor element of an opaque colored package cannot be performed by the above-described system.
For example, large and expensive equipment such as X-ray inspection equipment is required,
Furthermore, it took time to set up for inspection and the like, and the inspection could not be performed easily. For this reason, when an inspection of the internal state of a semiconductor device having an opaque colored package is to be performed in a manufacturing line, the introduction of the X-ray inspection apparatus or the like as described above requires workability, productivity, and the like. From the point of view, it was not appropriate.

[0009]

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to inspect the internal state of a semiconductor element sealed with a synthetic resin material by using a synthetic resin. Provides a small, easy-to-handle semiconductor device inspection system that can be easily performed regardless of whether the material is transparent or colored and opaque, and is also suitable for inspection introduced in a production line. Is to do.

[0010]

According to the present invention, there is provided an inspection system for a semiconductor device, comprising: a CCD imaging device having an infrared light transmitting filter disposed in front of a CCD; and a CCD imaging device sealed with a synthetic resin material. A semiconductor element to be inspected arranged in an imaging region, an infrared light source for projecting infrared light onto the semiconductor element, and an image processing for projecting infrared light and displaying a shadow image of the semiconductor element captured by a CCD imaging device Wherein the infrared light source is arranged so that infrared light transmitted through the semiconductor element is incident on the CCD image pickup device. Further, the infrared light source is arranged so that infrared light transmitted from the semiconductor element is incident on the CCD imaging device. Light emitting LED Thus made it is characterized in.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIGS. FIG. 1 is a configuration diagram showing a schematic configuration, FIG. 2 is a sectional view showing a main part of an infrared light source, FIG. 3 is a characteristic diagram showing sensitivity characteristics of a CCD imaging device, and FIG. 4 is an image processing device. FIG. 5 is a configuration diagram showing a main part of a modified embodiment.

Referring to FIGS. 1 to 5, an inspection system 21 is shown.
Is composed of an infrared light source unit 22 that emits infrared light of inspection light, and an inspection unit 24 that is opposed to the infrared light source unit 22 with a semiconductor element 23 to be inspected positioned therebetween. Have been. The infrared light source unit 22 includes a plurality of infrared LEs.
D (Light Emitting Diode) 25
Are provided in a case 26 and a constant voltage power supply 28 for causing the infrared light source 27 to emit light. The infrared light source 27 includes an appropriate number of infrared LEDs 25 according to the size of the semiconductor element 23 so that the infrared light is projected onto an area approximately equal to or slightly larger than the size of the semiconductor element 23 to be inspected. The plurality of infrared LEDs 25 are connected in parallel to a constant voltage power supply 28 by respectively connecting resistors 29 in series.

The inspection unit 24 includes a CCD (Charge).
e Coupled Device) 30, a CCD camera 32 in which an infrared light transmission filter 31 that transmits infrared light having a wavelength of 750 nm or more is disposed in front of a camera control unit that receives a signal from the CCD camera 32 and outputs an image signal. 33, a CCD imaging device 34;
An image processing device 35 obtains an image signal from the CCD imaging device 34, processes the image, and displays an image of the semiconductor element 23 to be inspected on a display unit (not shown). further,
In the CCD camera 32, the sensitivity characteristic of the CCD 30 is as shown by a characteristic line A in FIG. 3, and by disposing an infrared light transmitting filter 31 that transmits infrared light on the front surface of the CCD 30, the CCD camera 32 in FIG. Only the light in the infrared light region Y indicated by oblique lines is incident on the CCD 30.

On the other hand, the semiconductor element 23 to be inspected disposed between the infrared light source 27 and the CCD camera 32 is, for example, a light receiving section of a photo interrupter element as shown in a shadow image 23a of FIG. The semiconductor pellet 36 is fixed to a predetermined position of the lead frame 37, and the semiconductor pellet 36 and the predetermined part of the lead frame 37 are connected by a bonding wire 38, as shown by the reference numerals of the corresponding parts in the image 23a. The package is sealed in a package 39 made of a synthetic resin material such as an epoxy resin. Reference numeral 40 denotes the semiconductor pellet 36
The light-receiving window is formed in a substantially hemispherical shape with a transparent material so as to converge light to the light-receiving portion. It is formed of a cut type epoxy resin.

In the inspection of the internal state of the semiconductor element 23 by the inspection system 21 configured as described above, the infrared light emitted from the infrared light source 27 is projected on the semiconductor element 23 in a no-load state, CC with 23 silhouette images
The image 23 of the semiconductor device 3 shown in FIG. 4 captured by the D camera 32 and image-processed and displayed on the display unit of the image processing device 35
is performed, for example, by visual observation. The displayed image 23a also shows the internal state of the light receiving window 40 and a portion formed of a visible light cut type epoxy resin that does not transmit visible light, and the semiconductor pellet 36, the lead frame 37, The shape of the bonding wire 38 connecting them is also clearly shown.

As a result, according to the inspection system 21 described above, regardless of whether the synthetic resin material forming the package 39 is transparent or colored and opaque.
The infrared light of the inspection light projected from the infrared light source 27 passes through the package 39, and the internal state can be easily displayed by using the CCD imaging device 34 and the image processing device 35. Then, the infrared light source unit 22 and the C
The CD image pickup device 34 and the image processing device 35 have the same size as the conventional device using visible light, and are not particularly large in size but easy to handle. However, it is good and can be introduced into the production line for easy inspection.

In the above embodiment, the CCD
The CCD camera 32 of the imaging device 34 is positioned in front of the semiconductor device 23, and the infrared light source 27 of the infrared light source unit 22 is positioned so as to project infrared light from behind the semiconductor device 23. The transmitted infrared light from the infrared light source 27 is made incident on the CCD camera 32 to display the image 23a of the semiconductor element 23. However, the image 23a may be configured as in a modified example shown in FIG. . That is, the infrared light source 27 is arranged in front of the semiconductor element 23 and the infrared light source 2
7 is projected onto the semiconductor element 23 and the reflected light is
The semiconductor device 2 is made incident on a CD camera 32 and reflected light.
3 may be displayed.

Thus, regardless of whether the synthetic resin material forming the package 39 is transparent or colored and opaque, the perspective image of the semiconductor element 23 due to the reflected light can be obtained by the image processing device 35. The semiconductor device 23 is displayed as a silhouette image by the transmitted light of the above embodiment.
Rather than inspecting the internal state of the semiconductor pellet 3
The path of the bonding wire 38 connecting the lead frame 6 and the lead frame 37 and the state of each connection point are displayed in a more easily distinguishable manner, so that the internal state of the semiconductor element 23 can be more easily grasped.

In the above embodiment, the infrared light source 27 is constituted by using a plurality of infrared LEDs 25, but may be constituted by an infrared laser, an infrared lamp or the like.

[0020]

As is apparent from the above description, according to the present invention, the inspection of the internal state of a semiconductor element sealed with a synthetic resin material is performed by checking whether the synthetic resin material is transparent or colored and opaque. Since it can be easily performed even if it is present, and is small and easy to handle, there is an effect that it is possible to perform an inspection introduced in a production line.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a schematic configuration of an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a main part of an infrared light source according to an embodiment of the present invention.

FIG. 3 is a characteristic diagram illustrating sensitivity characteristics of the CCD imaging device according to the embodiment of the present invention.

FIG. 4 is a display diagram of a semiconductor element displayed on the image processing apparatus according to the embodiment of the present invention.

FIG. 5 is a configuration diagram showing a main part of a modification in one embodiment of the present invention.

FIG. 6 is a configuration diagram showing a schematic configuration of a conventional technique.

FIG. 7 is a characteristic diagram showing sensitivity characteristics of a CCD imaging device according to a conventional technique.

FIG. 8 is a display diagram of a semiconductor element displayed on a conventional image processing apparatus.

[Explanation of symbols]

 23 ... Semiconductor element 25 ... Infrared light emitting LED 27 ... Infrared light source 30 ... CCD 31 ... Infrared light transmission filter 32 ... CCD camera 34 ... CCD imaging device 35 ... Image processing device

Claims (4)

[Claims] A CCD imaging device having an infrared light transmitting filter disposed in front of the CCD; a semiconductor element to be inspected sealed with a synthetic resin material and disposed in an imaging region of the CCD imaging device; A semiconductor, comprising: an infrared light source that projects infrared light onto the semiconductor element; and an image processing device that projects the infrared light and displays a shadow image of the semiconductor element captured by the CCD imaging device. Device inspection system. 2. The semiconductor element inspection system according to claim 1, wherein the infrared light source is arranged so that infrared light transmitted through the semiconductor element is incident on the CCD image pickup device. 3. The inspection system for a semiconductor device according to claim 1, wherein the infrared light source is disposed so that infrared light transmitted from the semiconductor device is incident on the CCD image pickup device. 4. The inspection system according to claim 1, wherein the infrared light source comprises a plurality of infrared light emitting LEDs.