JP2001068680A5 - - Google Patents

Download PDF

Info

Publication number
JP2001068680A5
JP2001068680A5 JP2000101787 JP2000101787A JP2001068680A5 JP 2001068680 A5 JP2001068680 A5 JP 2001068680A5 JP 2000101787 JP2000101787 JP 2000101787 JP 2000101787 A JP2000101787 A JP 2000101787A JP 2001068680 A5 JP2001068680 A5 JP 2001068680A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000101787
Other versions
JP4651773B2 (en
JP2001068680A (en
Publication date
Priority to JP9948199 priority Critical
Priority to JP17612099 priority
Priority to JP11-99481 priority
Priority to JP11-176120 priority
Priority to JP2000101787A priority patent/JP4651773B2/en
Priority claimed from JP2000101787A external-priority patent/JP4651773B2/en
Application filed filed Critical
Publication of JP2001068680A publication Critical patent/JP2001068680A/en
Publication of JP2001068680A5 publication Critical patent/JP2001068680A5/ja
Publication of JP4651773B2 publication Critical patent/JP4651773B2/en
Application granted granted Critical
Application status is Expired - Fee Related legal-status Critical
Anticipated expiration legal-status Critical

Links

JP2000101787A 1999-04-06 2000-04-04 Method for manufacturing semiconductor device Expired - Fee Related JP4651773B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP9948199 1999-04-06
JP17612099 1999-06-22
JP11-99481 1999-06-22
JP11-176120 1999-06-22
JP2000101787A JP4651773B2 (en) 1999-04-06 2000-04-04 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000101787A JP4651773B2 (en) 1999-04-06 2000-04-04 Method for manufacturing semiconductor device

Publications (3)

Publication Number Publication Date
JP2001068680A JP2001068680A (en) 2001-03-16
JP2001068680A5 true JP2001068680A5 (en) 2007-06-07
JP4651773B2 JP4651773B2 (en) 2011-03-16

Family

ID=27308970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000101787A Expired - Fee Related JP4651773B2 (en) 1999-04-06 2000-04-04 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP4651773B2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6346730B1 (en) * 1999-04-06 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate
US6362507B1 (en) * 1999-04-20 2002-03-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical devices in which pixel section and the driver circuit are disposed over the same substrate
KR100915148B1 (en) * 2003-03-07 2009-09-03 엘지디스플레이 주식회사 Method for fabricating switching and driving device for liquid crystal display device with driving circuit
KR100924493B1 (en) * 2003-06-27 2009-11-03 엘지디스플레이 주식회사 Method of fabricating an array substrate for Liquid Crystal Display Device with driving circuit
US7859187B2 (en) 2003-11-14 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Display device and method for fabricating the same
JP4831954B2 (en) * 2003-11-14 2011-12-07 株式会社半導体エネルギー研究所 Method for manufacturing display device
KR100721555B1 (en) 2004-08-13 2007-05-23 삼성에스디아이 주식회사 Bottom gate thin film transistor and method fabricating thereof
TWI339442B (en) * 2005-12-09 2011-03-21 Samsung Mobile Display Co Ltd Flat panel display and method of fabricating the same
US9799773B2 (en) 2011-02-02 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
KR20160133994A (en) * 2015-05-14 2016-11-23 엘지디스플레이 주식회사 Thin Film Transistor and Backplane Substrate including the Same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0586674B2 (en) * 1984-03-06 1993-12-13 Seiko Epson Corp
JP3942699B2 (en) * 1997-08-29 2007-07-11 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
JP2007083013A5 (en)
JP2007080994A5 (en)
JP2007228046A5 (en)
JP2007226989A5 (en)
JP2007068215A5 (en)
JP2007068217A5 (en)
JP2007171786A5 (en)
JP2007073039A5 (en)
JP2007011577A5 (en)
JP2007298358A5 (en)
JP2010507210A5 (en)
JP2007164476A5 (en)
JP2007235723A5 (en)
JP2007142526A5 (en)
JP2007139921A5 (en)
JP2007249859A5 (en)
JP2007007126A5 (en)
JP2007014086A5 (en)
JP2007235373A5 (en)
JP2007208711A5 (en)
JP2007281091A5 (en)
JP2007235759A5 (en)
JP2007142267A5 (en)
JP2007171692A5 (en)
JP2007028874A5 (en)

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070404

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070404

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100820

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100907

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101006

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101102

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101105

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101207

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101215

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131224

Year of fee payment: 3

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131224

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250