JP2001015635A - Package for storing optical semiconductor element - Google Patents

Package for storing optical semiconductor element

Info

Publication number
JP2001015635A
JP2001015635A JP11183266A JP18326699A JP2001015635A JP 2001015635 A JP2001015635 A JP 2001015635A JP 11183266 A JP11183266 A JP 11183266A JP 18326699 A JP18326699 A JP 18326699A JP 2001015635 A JP2001015635 A JP 2001015635A
Authority
JP
Japan
Prior art keywords
optical semiconductor
semiconductor element
frame
layer
cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11183266A
Other languages
Japanese (ja)
Other versions
JP3619393B2 (en
Inventor
Kazuhiro Kawabata
和弘 川畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP18326699A priority Critical patent/JP3619393B2/en
Publication of JP2001015635A publication Critical patent/JP2001015635A/en
Application granted granted Critical
Publication of JP3619393B2 publication Critical patent/JP3619393B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PROBLEM TO BE SOLVED: To keep an optical semiconductor element always at a proper temperature even with a cooling member of low output, operate the optical semiconductor element normally and stably for a long period by storing the optical semiconductor element airtightly, and provide a compact and light package by preventing drop of cooling efficiency without allowing heat dissipation from a cooling member to work on an optical semiconductor element through a substrate. SOLUTION: An optical semiconductor element 4 is mounted on an upper surface of a ceramic substrate 5b at an upper side, a lower surface of a ceramic substrate at a lower side is exposed to the outside, and a metallized layer 5d is provided to a side surface of at least one ceramic substrate. A cooling member 5 wherein an electronic cooling element 5e is arranged between the ceramic substrates 5b, 5c is brazed to the inner side of a hole 1a of a frame-like substrate 1. As a result, heat generated from an optical semiconductor element 4 is emitted effectively without passing through the substrate 1, and compactness and thinning can be realized while storing the optical semiconductor element 4 airtightly.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は光半導体素子を収容
するための光半導体素子収納用パッケージに関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor element housing package for housing an optical semiconductor element.

【0002】[0002]

【従来の技術】従来、光半導体素子を収容するための光
半導体素子収納用パッケージは、一般に鉄−ニッケル−
コバルト合金や銅−タングステン合金等の金属材料から
成り、上面中央部に光半導体素子が電子冷却素子から成
る冷却部材を間に挟んで載置される載置部を有する基体
と、前記光半導体素子載置部を囲繞するようにして基体
上に銀ロウ等のロウ材を介して接合され、側部に貫通孔
及び切欠部を有する鉄−ニッケル−コバルト合金等の金
属材料から成る枠体と、前記枠体の貫通孔に取着され、
内部に光信号が伝達される空間を有する鉄−ニッケル−
コバルト合金等の金属材料から成る筒状の固定部材と、
前記筒状の固定部材に融点が200℃〜400℃の金−
錫合金等の低融点ロウ材を介して取着された固定部材の
内部を塞ぐ非晶質ガラス等から成る透光性部材と、前記
枠体の切欠部に挿着され、酸化アルミニウム質焼結体か
ら成る絶縁体に光半導体素子の各電極がボンディングワ
イヤを介して電気的に接続されるメタライズ配線層が形
成されているセラミック端子体と、前記枠体の上面に取
着され、光半導体素子を気密に封止する蓋体とから構成
されており、前記基体の光半導体素子載置部に光半導体
素子を間に冷却部材を挟んで載置固定させるとともに該
光半導体素子の各電極をボンディングワイヤを介してセ
ラミック端子体のメタライズ配線層に電気的に接続し、
しかる後、前記枠体の上面に蓋体を接合させ、基体と枠
体と蓋体とから成る容器内部に光半導体素子を気密に収
容するとともに筒状固定部材に光ファイバ部材を、例え
ばYAG溶接等により取着することによって製品として
の光半導体装置となる。
2. Description of the Related Art Conventionally, a package for housing an optical semiconductor element for housing an optical semiconductor element is generally made of iron-nickel-
A base made of a metal material such as a cobalt alloy or a copper-tungsten alloy, and having a mounting portion in the center of the upper surface where the optical semiconductor element is mounted with a cooling member including an electronic cooling element interposed therebetween; A frame body made of a metal material such as an iron-nickel-cobalt alloy having a through-hole and a cutout on a side portion, which is joined to the base via a brazing material such as silver brazing so as to surround the mounting portion, Attached to the through hole of the frame,
Iron-nickel with space for transmitting optical signals inside
A cylindrical fixing member made of a metal material such as a cobalt alloy;
The cylindrical fixing member has a melting point of 200 ° C to 400 ° C.
A translucent member made of amorphous glass or the like that blocks the inside of the fixing member attached via a low melting point brazing material such as a tin alloy; A ceramic terminal body in which a metallized wiring layer in which each electrode of the optical semiconductor element is electrically connected via a bonding wire to an insulator made of a body, and an optical semiconductor element attached to the upper surface of the frame body And a lid for hermetically sealing the optical semiconductor element. The optical semiconductor element is mounted and fixed on the optical semiconductor element mounting portion of the base with a cooling member interposed therebetween, and each electrode of the optical semiconductor element is bonded. Electrically connected to the metallized wiring layer of the ceramic terminal body via the wire,
Thereafter, a lid is joined to the upper surface of the frame, the optical semiconductor element is hermetically housed in a container formed of the base, the frame, and the lid, and the optical fiber member is attached to the cylindrical fixing member by, for example, YAG welding. An optical semiconductor device as a product can be obtained by attaching the optical semiconductor device.

【0003】前記光半導体装置は、冷却部材により光半
導体素子等の光学部品を冷却しつつ例えば、光半導体素
子に外部電気回路から供給される駆動信号によって光励
起を起こさせ、この励起した光を透光性部材を介し光フ
ァイバ部材に授受させるとともにこの光ファイバ部材の
光ファイバ内を伝達させることによって、高速通信等に
使用される。
In the optical semiconductor device, for example, an optical component such as an optical semiconductor element is cooled by a cooling member, and the optical semiconductor element is optically excited by a drive signal supplied from an external electric circuit, and the excited light is transmitted. It is used for high-speed communication and the like by transmitting and receiving an optical fiber member via an optical member and transmitting the optical fiber member inside the optical fiber.

【0004】また、特開平9−55489号公報には、
リードフレームの表側に固体撮像素子を設け、裏側に冷
却部材を設け、この固体撮像素子及び前記冷却部材を該
冷却部材の反固体撮像素子側の面が外部に露出するよう
に樹脂からなるパッケージに実装された固体撮像装置が
開示されている。
Japanese Patent Application Laid-Open No. 9-55489 discloses that
A solid-state imaging device is provided on the front side of the lead frame, and a cooling member is provided on the back side. The solid-state imaging device and the cooling member are packaged in a resin package such that the surface of the cooling member on the side opposite to the solid-state imaging device is exposed to the outside. A mounted solid-state imaging device is disclosed.

【0005】この固体撮像装置によれば、固体撮像素子
と冷却部材が、ともに樹脂により封止されており、か
つ、冷却部材をその反固体撮像素子側の面が露出するよ
うなパッケージ構造となっているので、固体撮像装置を
徒らに大きくすることなく冷却効率を高めることができ
るというものである。
According to this solid-state image pickup device, the solid-state image pickup device and the cooling member are both sealed with resin, and the cooling member has a package structure in which the surface on the side opposite to the solid-state image pickup device is exposed. Therefore, the cooling efficiency can be improved without unnecessarily increasing the size of the solid-state imaging device.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、前記従
来の光半導体素子収納用パッケージにおいては、基体及
び枠体を形成している鉄−ニッケル−コバルト合金や銅
−タングステン合金等の金属材料やセラミック端子体の
絶縁体を形成している酸化アルミニウム質焼結体の熱伝
導率が15W/m・K以上と大きいものであることか
ら、光半導体素子を冷却部材で冷却しつつ、光半導体素
子を外部電気回路から供給される駆動信号によって光励
起させた場合、光半導体素子が載置される冷却部材の上
面のセラミック基板は適温となっているものの基体と接
する下面のセラミック基板は高温(約100℃)となっ
て、熱を有するため、この下面のセラミック基板から基
体、枠体、セラミック端子体及びボンディングワイヤを
介して光半導体素子に前記熱が大きく作用し、前記光半
導体素子の冷却部材による冷却効率を大きく低下させて
しまうといった問題点を有していた。
However, in the above-mentioned conventional package for housing an optical semiconductor element, a metal material such as an iron-nickel-cobalt alloy or a copper-tungsten alloy or a ceramic terminal forming the base and the frame is used. Since the thermal conductivity of the aluminum oxide sintered body forming the insulator of the body is as large as 15 W / m · K or more, the optical semiconductor element can be externally cooled while cooling the optical semiconductor element with a cooling member. When the optical signal is excited by a drive signal supplied from an electric circuit, the ceramic substrate on the upper surface of the cooling member on which the optical semiconductor element is mounted has an appropriate temperature, but the ceramic substrate on the lower surface in contact with the base has a high temperature (about 100 ° C.). Because of the heat, the optical semiconductor element is transferred from the ceramic substrate on the lower surface through the base, the frame, the ceramic terminal, and the bonding wires. The heat acts largely had a problem that the cooling results in efficiency greatly reduce by cooling member of the optical semiconductor element.

【0007】また、前記枠体の高さは前記冷却部材と前
記光半導体素子との合計の高さ以上であることが必要な
ため、光半導体素子収納用パッケージの小型化や軽量化
を図ることが困難であるといった問題点を有していたと
ともに製品としての光半導体装置と成した場合にも同様
な問題点を有していた。
In addition, since the height of the frame needs to be equal to or greater than the total height of the cooling member and the optical semiconductor element, the package for storing the optical semiconductor element is reduced in size and weight. In addition, there is a problem that the optical semiconductor device is difficult, and a similar problem occurs when the optical semiconductor device is formed as a product.

【0008】また、特開平9−55489号公報に開示
されている固体撮像装置に用いられている光半導体素子
収納用パッケージのような冷却部材を備えた構造の場合
には、冷却効率は向上するものの、一般的に吸水性が高
い樹脂をパッケージ本体に用いていることから、また前
記樹脂は、冷却部材との熱膨張係数が大きく相違するた
めに、前記固体撮像素子を作動させた際に発せられる熱
による大きな熱膨張差が発生し、前記固体撮像素子と前
記樹脂の間で密着性が劣化することから、固体撮像素子
等の光半導体素子を気密に収容することが困難であると
いった問題点を有していた。
In the case of a structure having a cooling member such as an optical semiconductor element housing package used in a solid-state imaging device disclosed in Japanese Patent Application Laid-Open No. 9-55489, cooling efficiency is improved. However, since the resin having high water absorption is generally used for the package body, and the resin has a large difference in thermal expansion coefficient from the cooling member, the resin emits when the solid-state imaging device is operated. A large difference in thermal expansion occurs due to the applied heat, and the adhesion between the solid-state imaging device and the resin is deteriorated. Therefore, it is difficult to hermetically accommodate an optical semiconductor device such as a solid-state imaging device. Had.

【0009】本発明は上記問題点に鑑み案出されたもの
で、その目的は、冷却部材からの放熱が基体を介して光
半導体素子に作用することなく、冷却効率が低下するの
を有効に防止することによって、低出力の冷却部材によ
っても前記光半導体素子を常に適温とすることができ、
しかも、この光半導体素子を気密に収容することによっ
て、長期間にわたり光半導体素子を正常かつ安定に作動
させることができ、さらに小型かつ軽量な光半導体素子
収納用パッケージを提供することにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to effectively reduce the cooling efficiency without heat radiation from a cooling member acting on an optical semiconductor element via a base. By preventing, the optical semiconductor element can always be kept at an appropriate temperature even by a low-power cooling member,
In addition, it is an object of the present invention to provide a compact and lightweight package for housing an optical semiconductor element which can be normally and stably operated for a long period of time by housing the optical semiconductor element in an airtight manner.

【0010】[0010]

【課題を解決するための手段】本発明の光半導体素子収
納用パッケージは、枠状の基体と、この基体の内側に挿
着され、上面に光半導体素子が載置される載置部を有す
るとともに下面を外部に露出させた冷却部材と、前記基
体上に前記載置部を囲繞するようにして取着され、側部
に貫通孔及び切欠部を有する枠体と、前記貫通孔に取着
され、光ファイバ部材が挿入固定される筒状の固定部材
と、前記切欠部に挿着され、絶縁体に前記光半導体素子
の各電極が電気的に接続されるメタライズ配線層が形成
されているセラミック端子体と、前記枠体の上面に取着
され、光半導体素子を気密に封止する蓋体とからなる構
造であって、前記冷却部材は、上下のセラミック基板間
に電子冷却素子を配設して成り、少なくとも一方の前記
セラミック基板の側面に形成されたメタライズ層を介し
て前記基体の内側にロウ付けされていることを特徴とす
るものである。
The optical semiconductor device housing package of the present invention has a frame-shaped base and a mounting portion which is inserted inside the base and on which the optical semiconductor element is mounted. A cooling member having a lower surface exposed to the outside, a frame body having a through-hole and a cut-out portion on the side, and being attached to the base so as to surround the mounting portion, and being attached to the through-hole. A cylindrical fixing member into which the optical fiber member is inserted and fixed; and a metallized wiring layer which is inserted into the cutout portion and electrically connected to each electrode of the optical semiconductor element on the insulator. A structure comprising a ceramic terminal body and a lid attached to an upper surface of the frame body and hermetically sealing the optical semiconductor element, wherein the cooling member has an electronic cooling element arranged between upper and lower ceramic substrates. And at least one of the ceramic substrates Is characterized in that through a metallized layer formed on the surface is brazed to the inside of the substrate.

【0011】本発明の光半導体素子収納用パッケージに
よれば、前記光半導体素子から発せられる熱を放散させ
る構造として、略中央部に貫通された孔部を有した枠状
の基体の内側すなわち、その孔部に、上面に光半導体素
子を載置するための載置部を有したセラミック基板と、
下面が前記枠状の基体の外部に露出したセラミック基板
と、それらの間に配設された電子冷却素子とからなる冷
却部材を挿着するために、少なくとも一方のセラミック
基板の側面にメタライズ層を設け、このメタライズ層を
介して枠状の基体の孔部の側面とロウ付けされて成る構
造としたことから、枠状の基体と冷却部材とを強固に接
合でき、かつ気密性に優れた金属接合すなわちロウ付け
を行っているため、光半導体素子収納用パッケージ内部
に光半導体素子を気密に収容し、長期間にわたり正常か
つ安定に作動させることができる。
According to the package for housing an optical semiconductor element of the present invention, as a structure for dissipating heat generated from the optical semiconductor element, the package is provided inside a frame-shaped base having a hole penetrated substantially in the center, that is, In the hole portion, a ceramic substrate having a mounting portion for mounting the optical semiconductor element on the upper surface,
In order to insert a cooling member composed of a ceramic substrate whose lower surface is exposed to the outside of the frame-shaped base and an electronic cooling element disposed therebetween, a metallized layer is formed on a side surface of at least one of the ceramic substrates. The metal member has a structure that is brazed to the side surface of the hole of the frame-shaped base via the metallized layer, so that the frame-shaped base and the cooling member can be firmly joined together and have excellent airtightness. Since the bonding, that is, the brazing, is performed, the optical semiconductor element can be hermetically housed inside the optical semiconductor element housing package, and can be normally and stably operated for a long period of time.

【0012】また、冷却部材は枠状の基体の孔部に挿着
されているため、枠体は、冷却部材を枠状の基体に入り
込ませた分の高さ分は低くすることができ、その結果、
小型且つ軽量な光半導体素子収納用パッケージとするこ
とができる。
Also, since the cooling member is inserted into the hole of the frame-shaped base, the height of the frame can be reduced by the amount of the cooling member inserted into the frame-shaped base, as a result,
A compact and lightweight package for housing an optical semiconductor element can be obtained.

【0013】また、光半導体素子を冷却部材で冷却しつ
つ外部電気回路から供給される駆動信号によって光励起
させた場合、冷却部材から放出される熱は、枠状の基体
を介することなく、その外部に露出した下面から放散さ
れるので、光半導体素子に作用することはなく、その結
果、光半導体素子の冷却部材による冷却効率を高いもの
とすることができ、低出力の冷却部材でも光半導体素子
を常に適温の状態で作動させることができる。
Further, when the optical semiconductor element is optically excited by a drive signal supplied from an external electric circuit while being cooled by the cooling member, the heat released from the cooling member does not pass through the frame-shaped base but to the outside. Since it is radiated from the exposed lower surface, it does not act on the optical semiconductor element, and as a result, the cooling efficiency of the optical semiconductor element by the cooling member can be increased. Can always be operated at an appropriate temperature.

【0014】[0014]

【発明の実施の形態】次に、本発明を添付図面に基づき
詳細に説明する。
Next, the present invention will be described in detail with reference to the accompanying drawings.

【0015】図1は本発明の光半導体素子収納用パッケ
ージの実施の形態の一例を示す断面図であり、図2はこ
の光半導体素子収納用パッケージの蓋体を除いた平面図
である。これらの図において、1は枠状の基体、2は枠
体、3は蓋体、4は光半導体素子、5は冷却部材であ
る。この枠状の基体1と枠体2と蓋体3と冷却部材5と
で内部に光半導体素子4を収容するための容器が構成さ
れる。
FIG. 1 is a sectional view showing an embodiment of an optical semiconductor element housing package according to the present invention, and FIG. 2 is a plan view of the optical semiconductor element housing package without a cover. In these figures, 1 is a frame-shaped base, 2 is a frame, 3 is a lid, 4 is an optical semiconductor element, and 5 is a cooling member. The frame-shaped base 1, frame 2, lid 3, and cooling member 5 constitute a container for housing the optical semiconductor element 4 therein.

【0016】この枠状の基体1は鉄−ニッケル−コバル
ト合金や鉄−ニッケル合金等の金属材料や酸化アルミニ
ウム焼結体、窒化アルミニウム焼結体、ムライト質焼結
体、窒化珪素質焼結体等のセラミック材料から成り、そ
の中央部に冷却部材5が挿着されるための孔部1aが形
成されている。
The frame-shaped substrate 1 is made of a metal material such as iron-nickel-cobalt alloy or iron-nickel alloy, aluminum oxide sintered body, aluminum nitride sintered body, mullite sintered body, silicon nitride sintered body. A hole 1a for inserting the cooling member 5 is formed in the center of the ceramic material.

【0017】枠状の基体1は、金属材料の場合、例え
ば、鉄−ニッケル−コバルト合金等のインゴット(塊)
に圧延加工法や打ち抜き加工法等、従来周知の金属加工
法を施すこと等によって所定の形状に形成される。
When the frame-shaped substrate 1 is made of a metal material, for example, an ingot such as an iron-nickel-cobalt alloy is used.
It is formed into a predetermined shape by applying a conventionally known metal working method such as a rolling method or a punching method.

【0018】また枠状の基体1は、セラミック材料の場
合、例えば酸化アルミニウム焼結体の場合は、酸化アル
ミニウム、酸化珪素、酸化マグネシウム、酸化カルシウ
ム等の原料粉末に適当な有機バインダ、溶剤等を添加混
合して泥漿物を作るとともに、この泥漿物をドクターブ
レード法やカレンダーロール法を採用することによっ
て、セラミックグリーンシート(セラミック生シート)
と成し、しかる後、このセラミックグリーンシートに適
当な打ち抜き加工を施すとともにこれを1枚で、あるい
は複数枚積層して、約1600℃の温度で焼成すること
によって製作される。
When the frame-shaped substrate 1 is made of a ceramic material, for example, in the case of an aluminum oxide sintered body, an appropriate organic binder, a solvent or the like is added to a raw material powder of aluminum oxide, silicon oxide, magnesium oxide, calcium oxide or the like. A ceramic green sheet (ceramic green sheet) is formed by adding and mixing to form a slurry, and using the slurry by a doctor blade method or a calendar roll method.
Thereafter, the ceramic green sheet is manufactured by subjecting the ceramic green sheet to a suitable punching process and laminating one or a plurality of the green sheets and firing at a temperature of about 1600 ° C.

【0019】この枠状の基体1はまたその中央部に形成
された孔部1aに冷却部材5が挿着されている。この冷
却部材5は光半導体素子4を支持するための支持部材と
して作用し、その上面の略中央部に光半導体素子4を載
置するための載置部5aを有し、この載置部5aには光
半導体素子4が錫−ビスマス等の低温半田を介して接着
固定される。
A cooling member 5 is inserted into a hole 1a formed in the center of the frame-shaped base 1. The cooling member 5 functions as a support member for supporting the optical semiconductor element 4, and has a mounting section 5a for mounting the optical semiconductor element 4 at a substantially central portion of the upper surface thereof. The optical semiconductor element 4 is bonded and fixed via a low-temperature solder such as tin-bismuth.

【0020】この冷却部材5は、図1に示すように、上
面側のセラミック基板5bと下面側のセラミック基板5
cの長さが等しく、これらの間に電子冷却素子5eを配
設して成る。
As shown in FIG. 1, the cooling member 5 includes a ceramic substrate 5b on the upper side and a ceramic substrate 5 on the lower side.
c are equal in length, and an electronic cooling element 5e is arranged between them.

【0021】電子冷却素子5eは、上面側のセラミック
基板5bと下面側のセラミック基板5cの間に、例えば
金属電極を介してP型素子とN型素子からなる2種類の
熱伝半導体を交互に配列したものであって、光半導体素
子から発せられる熱を、上面側のセラミック基板5bで
吸熱し、下面側のセラミック基板5cで放熱(発熱)す
る特性を有するものである。従って、光半導体素子4が
載置される上面側のセラミック基板5bは常に適温とな
り、一方、下面側のセラミック基板5cは高温となって
いる。
The thermoelectric cooler 5e is composed of two types of thermoconductive semiconductors composed of a P-type element and an N-type element alternately between a ceramic substrate 5b on the upper surface and a ceramic substrate 5c on the lower surface, for example, via a metal electrode. They are arranged in such a manner that heat generated from the optical semiconductor element is absorbed by the upper ceramic substrate 5b and is radiated (heated) by the lower ceramic substrate 5c. Accordingly, the upper ceramic substrate 5b on which the optical semiconductor element 4 is mounted is always at an appropriate temperature, while the lower ceramic substrate 5c is at a high temperature.

【0022】また冷却部材5は、図1に示すように、枠
状の基体1の中央部に設けられた貫通された孔部1aの
側面と、光半導体素子4が載置される上面側のセラミッ
ク基板5bの側面および下面側のセラミック基板5cの
側面のいずれにも施されたメタライズ層5dとが、錫−
鉛半田や錫−銀半田等の低温半田を介して接着固定され
る。これにより、冷却部材5を枠状の基体1の孔部1a
に強固に接合せしめることができ、また、光半導体素子
4を気密に収容することができるとともに、この光半導
体素子4から発せられる熱を、この熱で高温となってい
る下面側のセラミック基板5cから、枠状の基体1を介
することなく効率良く放熱できることとなる。
As shown in FIG. 1, the cooling member 5 has a side surface of a through hole 1a provided in the center of the frame-shaped base 1, and a top surface side on which the optical semiconductor element 4 is mounted. The metallized layer 5d provided on both the side surface of the ceramic substrate 5b and the side surface of the ceramic substrate 5c on the lower surface is in contact with tin-
It is bonded and fixed via low-temperature solder such as lead solder or tin-silver solder. Thereby, the cooling member 5 is connected to the hole 1a of the frame-shaped base 1.
And the optical semiconductor element 4 can be housed in an airtight manner, and the heat generated from the optical semiconductor element 4 is transferred to the ceramic substrate 5c on the lower side, which is heated to a high temperature by this heat. Therefore, heat can be efficiently dissipated without passing through the frame-shaped base 1.

【0023】なお、この冷却部材5は、図3に要部拡大
断面図で示すように、上面側のセラミック基板5bの長
さが、下面側のセラミック基板5cの長さよりも短く、
これらの間に電子冷却素子5eを配設して成るものとし
てもよい。この例の場合には、枠状の基体1の中央部に
設けられた貫通された孔部1aの側面と、上面側のセラ
ミック基板5bの側面のみに施されたメタライズ層5d
とが、錫−鉛半田や錫−銀半田等の低温半田を介して接
着固定される。このようにすると、光半導体素子4を気
密に収容することができるとともに、この光半導体素子
4から発せられる熱は、枠状の基体1を介することがな
いばかりでなく、下面側のセラミック基板5cも介する
ことがないので、より効率良く放熱できることとなる。
As shown in FIG. 3, the length of the upper ceramic substrate 5b is shorter than that of the lower ceramic substrate 5c.
An electronic cooling element 5e may be provided between them. In the case of this example, the side surface of the penetrated hole 1a provided at the center of the frame-shaped base 1 and the metallized layer 5d provided only on the side surface of the ceramic substrate 5b on the upper surface side
Are bonded and fixed via low-temperature solder such as tin-lead solder or tin-silver solder. In this way, the optical semiconductor element 4 can be housed in an airtight manner, and the heat generated from the optical semiconductor element 4 does not not only pass through the frame-shaped base 1 but also the ceramic substrate 5c on the lower surface side. Therefore, heat can be dissipated more efficiently.

【0024】冷却部材5における上面側のセラミック基
板5bと下面側のセラミック基板5cは、酸化アルミニ
ウム質焼結体や窒化アルミニウム質焼結体等から成り、
例えば窒化アルミニウム質焼結体から成る場合には、窒
化アルミニウム、酸化イットリウム、酸化カルシウム等
の原料粉末に適当な有機バインダ、溶剤等を添加混合し
て泥漿物を作るとともに、この泥漿物をドクターブレー
ド法やカレンダーロール法を採用することによってセラ
ミックグリーンシート(セラミック生シート)と成し、
しかる後、前記セラミックグリーンシートに適当な打ち
抜き加工を施し、約1700℃の温度で焼結することに
よって製作される。
The ceramic substrate 5b on the upper surface side and the ceramic substrate 5c on the lower surface side of the cooling member 5 are made of an aluminum oxide sintered body, an aluminum nitride sintered body, or the like.
For example, in the case of an aluminum nitride sintered body, a suitable organic binder, a solvent, etc. are added to raw material powders such as aluminum nitride, yttrium oxide, and calcium oxide to form a slurry, and the slurry is doctor bladed. And ceramic green sheet (ceramic raw sheet)
Thereafter, the ceramic green sheet is manufactured by subjecting the ceramic green sheet to appropriate punching and sintering at a temperature of about 1700 ° C.

【0025】メタライズ層5dは、枠状の基体1の孔部
1aに接着固定させる際の接着層として作用し、タング
ステン、モリブデン、マンガン等の高融点金属粉末によ
り形成されている。
The metallized layer 5d functions as an adhesive layer when it is bonded and fixed to the hole 1a of the frame-shaped substrate 1, and is made of a high melting point metal powder such as tungsten, molybdenum, manganese or the like.

【0026】このメタライズ層5dはタングステン、モ
リブデン、マンガン等の高融点金属粉末に適当な有機バ
インダ、溶剤等を添加混合して得た金属ペーストを、上
面側のセラミック基板5bおよび下面側のセラミック基
板5cとなるセラミックグリーンシートの少なくとも一
方の側面に、予め従来周知のスクリーン印刷法により印
刷塗布した後に焼成することによって、上面側のセラミ
ック基板5bと下面側のセラミック基板5cに形成され
る。
The metallized layer 5d is made of a metal paste obtained by adding a suitable organic binder, a solvent and the like to a high melting point metal powder such as tungsten, molybdenum, manganese or the like, and mixing the metal paste with an upper ceramic substrate 5b and a lower ceramic substrate. The ceramic green sheet 5c is formed on the ceramic substrate 5b on the upper surface side and the ceramic substrate 5c on the lower surface side by printing and applying on at least one side surface of the ceramic green sheet by a conventionally well-known screen printing method and then firing.

【0027】なお、メタライズ層5dはその露出する表
面にニッケル、金等の耐蝕性に優れ、かつロウ材との濡
れ性に優れる金属を1μm〜20μmの厚みにメッキ法
により被着させておくと、メタライズ層5dの酸化腐蝕
を有効に防止することができるとともにメタライズ層5
dを枠状の基体1の孔部1aの側面に、より強固にロウ
付けすることができる。従って、メタライズ層5dは、
その露出する表面にニッケル、金等の耐蝕性に優れ、か
つロウ材との濡れ性に優れる金属を1μm〜20μmの
厚みに被着させておくことが好ましい。
The metallized layer 5d is preferably provided with a metal having excellent corrosion resistance such as nickel and gold and excellent wettability with a brazing material to a thickness of 1 μm to 20 μm by a plating method on the exposed surface. And the metallization layer 5d can be effectively prevented from being oxidized and corroded.
d can be more firmly brazed to the side surface of the hole 1a of the frame-shaped base 1. Therefore, the metallization layer 5d
It is preferable that a metal having excellent corrosion resistance, such as nickel and gold, and having excellent wettability with a brazing material is applied to the exposed surface to a thickness of 1 μm to 20 μm.

【0028】さらに冷却部材5が挿着された枠状の基体
1の上面には、光半導体素子4が載置される載置部5a
を囲繞するようにして枠体2が接合されており、この枠
体2の内側に光半導体素子4を収容するための空所が形
成されている。
Further, on the upper surface of the frame-shaped base 1 on which the cooling member 5 is inserted, a mounting portion 5a on which the optical semiconductor element 4 is mounted.
The frame 2 is joined so as to surround the optical semiconductor element 4. A space for accommodating the optical semiconductor element 4 is formed inside the frame 2.

【0029】枠体2は鉄−ニッケル−コバルト合金や鉄
−ニッケル合金等の金属材料から成り、例えば、これら
の金属材料のインゴット(塊)をプレス加工により枠状
とすることによって形成され、枠状の基体1への取着
は、この枠状の基体1上面と枠体2の下面とを銀ロウ材
を介しロウ付けすることによって行なわれている。
The frame 2 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. For example, the frame 2 is formed by pressing an ingot of such a metal material into a frame shape by pressing. Attachment to the frame-shaped base 1 is performed by brazing the upper surface of the frame-shaped base 1 and the lower surface of the frame 2 via a silver brazing material.

【0030】枠体2はまたその側部に貫通孔2aが設け
てあり、この貫通孔2aの内壁面には筒状の固定部材6
が取着され、さらに筒状の固定部材6の内側の一端に
は、例えば光半導体素子4が励起した光を集光させるた
めの透光性部材7が取着されている。
The frame 2 also has a through hole 2a on the side thereof, and a cylindrical fixing member 6 is formed on the inner wall surface of the through hole 2a.
Further, at one end inside the cylindrical fixing member 6, for example, a light transmitting member 7 for condensing light excited by the optical semiconductor element 4 is attached.

【0031】枠体2の側部に形成されている貫通孔2a
は固定部材6を枠体2に取着するための取着孔として作
用し、枠体2の側部に従来周知のドリル孔あけ加工を施
すこと等によって所定形状に形成される。
A through hole 2a formed on the side of the frame 2
Acts as an attachment hole for attaching the fixing member 6 to the frame 2, and is formed into a predetermined shape by performing a conventionally well-known drilling process on a side portion of the frame 2.

【0032】この枠体2の貫通孔2aに取着されている
固定部材6は光ファイバ部材9を枠体2に固定する際の
下地固定部材として作用するとともに光半導体素子4が
励起した光を光ファイバ部材9に伝達させる作用をな
し、その外側の一端には光ファイバ部材9が取着接続さ
れる。
The fixing member 6 attached to the through hole 2a of the frame 2 functions as a base fixing member when fixing the optical fiber member 9 to the frame 2, and also reduces the light excited by the optical semiconductor element 4. The optical fiber member 9 is transmitted to the optical fiber member 9, and the optical fiber member 9 is attached and connected to one end on the outside.

【0033】筒状の固定部材6は鉄−ニッケル−コバル
ト合金や鉄−ニッケル合金等の金属材料から成り、例え
ば、これらの金属材料のインゴット(塊)をプレス加工
により筒状とすることによって形成される。
The cylindrical fixing member 6 is made of a metal material such as an iron-nickel-cobalt alloy or an iron-nickel alloy. For example, the fixing member 6 is formed by pressing an ingot of such a metal material into a cylinder by pressing. Is done.

【0034】さらに固定部材6はその内側の一端に、例
えば透光性部材7が取着されており、この透光性部材7
は固定部材6の内部空間を塞ぎ、枠状の基体1と枠体2
と蓋体3とから成る容器の気密封止を保持させるととも
に固定部材6の内部空間を伝達する光半導体素子4の励
起した光をそのまま固定部材6に取着接続される光ファ
イバ部材9に伝達させる作用をなす。
Further, the fixing member 6 has, for example, a light-transmitting member 7 attached to one inner end thereof.
Is used to close the internal space of the fixing member 6, and to form a frame-shaped base 1 and a frame 2
The light excited by the optical semiconductor element 4, which transmits the internal space of the fixing member 6 while maintaining the hermetic sealing of the container composed of the container 3 and the lid 3, is transmitted as it is to the optical fiber member 9 attached to and connected to the fixing member 6. It has the effect of causing.

【0035】この透光性部材7は例えば、酸化珪素、酸
化鉛を主成分とした鉛系およびホウ酸、ケイ砂を主成分
としたホウケイ酸系の非晶質ガラスで形成されており、
この非晶質ガラスは結晶軸が存在しないことから光半導
体素子4の励起する光を透光性部材7を通過させて光フ
ァイバ部材9に授受させる場合、光半導体素子4の励起
した光は透光性部材7で複屈折を起こすことはなくその
まま光ファイバ部材9に授受されることとなり、その結
果、光半導体素子4が励起した光の光ファイバ部材9へ
の授受が高効率となって光信号の伝送効率を高いものと
なすことができる。
The light-transmitting member 7 is made of, for example, a lead-based amorphous glass mainly containing silicon oxide and lead oxide and a borosilicate-based amorphous glass mainly containing boric acid and silica sand.
Since the amorphous glass has no crystal axis, the light excited by the optical semiconductor element 4 is transmitted and transmitted to the optical fiber member 9 by passing the light excited by the optical semiconductor element 4 through the translucent member 7. The birefringence does not occur in the optical member 7 and is transmitted / received to the optical fiber member 9 as it is. As a result, the transmission / reception of the light excited by the optical semiconductor element 4 to / from the optical fiber member 9 becomes highly efficient. Signal transmission efficiency can be increased.

【0036】この透光性部材7の固定部材6への取着は
例えば、図4に示すように、透光性部材7の外周部に予
め金属膜8を被着させておき、この金属膜8と固定部材
6とを金−錫合金等のロウ材を介しロウ付けすることに
よって行なわれる。この場合、透光性部材7の固定部材
6への取着が金−錫合金等によるロウ付けにより行われ
ることから取着の信頼性が高いものとなり、これによっ
て固定部材6と透光性部材7との取着部における光半導
体素子4を収容する容器の気密封止が完全となり、容器
内部に収容する光半導体素子4を長期間にわたり正常か
つ安定に作動させることができる。
For attaching the light transmitting member 7 to the fixing member 6, for example, as shown in FIG. 4, a metal film 8 is previously applied to the outer periphery of the light transmitting member 7, 8 and the fixing member 6 are brazed through a brazing material such as a gold-tin alloy. In this case, since the attachment of the translucent member 7 to the fixing member 6 is performed by brazing with a gold-tin alloy or the like, the attachment is highly reliable. The hermetic sealing of the container accommodating the optical semiconductor element 4 at the portion where the optical semiconductor element 4 is attached to the container 7 is completed, and the optical semiconductor element 4 accommodated in the container can be normally and stably operated for a long time.

【0037】なお、この透光性部材7の外周部に予め被
着されている金属膜8は透光性部材7を構成する非晶質
ガラスの融点が約700℃と低く、従来周知のMo−M
n法を採用することによって形成することができないこ
とから、図4に示すように、非晶質ガラスに対して活性
があり、強固に接合するチタン、チタン−タングステ
ン、窒化タンタルの少なくとも1種から成る第1層8a
と、この第1層8aが透光性部材7を固定部材6にロウ
付けする際の熱によって後述する第3層8cに拡散し、
金属膜8の透光性部材7に対する接合強度が低下するの
を有効に防止する白金、ニッケル、ニッケル−クロムの
少なくとも1種から成る第2層8bと、金属膜8に対す
るロウ材の濡れ性を改善し、金属膜8にロウ材を強固に
接合させて透光性部材7を固定部材6に強固に取着させ
る金、白金、銅の少なくとも1種から成る第3層8cと
を順次、積層させることによって形成されており、特に
チタン−白金−金を順次積層させて形成した金属膜8は
透光性部材7との接合強度が強く、かつロウ材との濡れ
性が良好で透光性部材7を固定部材6にロウ付けするこ
とが可能なことから金属膜8として極めて好適である。
The melting point of the amorphous glass constituting the light transmitting member 7 is as low as about 700 ° C., and the metal film 8 previously coated on the outer peripheral portion of the light transmitting member 7 is low. -M
Since it cannot be formed by adopting the n method, as shown in FIG. 4, it is active against amorphous glass and is formed from at least one of titanium, titanium-tungsten, and tantalum nitride which are strongly bonded. First layer 8a
And the first layer 8a is diffused into a third layer 8c, which will be described later, by heat generated when the translucent member 7 is brazed to the fixing member 6,
The second layer 8b made of at least one of platinum, nickel, and nickel-chromium, which effectively prevents the bonding strength of the metal film 8 to the translucent member 7, and the wettability of the brazing material to the metal film 8 The third layer 8c made of at least one of gold, platinum, and copper is sequentially laminated, in which the brazing material is firmly joined to the metal film 8 to firmly attach the light transmitting member 7 to the fixing member 6. In particular, the metal film 8 formed by sequentially laminating titanium-platinum-gold has a high bonding strength with the light-transmitting member 7, a good wettability with the brazing material, and a good light-transmitting property. Since the member 7 can be brazed to the fixing member 6, it is very suitable as the metal film 8.

【0038】さらに、このチタン、チタン−タングステ
ン、窒化タンタルの少なくとも1種から成る第1層8a
と、白金、ニッケル、ニッケル−クロムの少なくとも1
種から成る第2層8bと、金、白金、銅の少なくとも1
種から成る第3層8cとの3層構造を有する金属膜8は
その各々の金属材料、窒化物を透光性部材7の外周部に
スパッタリング法や蒸着法、イオンプレーティング法、
メッキ法等により順次、所定厚みに被着させることによ
って形成される。
Further, the first layer 8a made of at least one of titanium, titanium-tungsten, and tantalum nitride
And at least one of platinum, nickel and nickel-chromium
A second layer 8b of seeds and at least one of gold, platinum and copper
The metal film 8 having a three-layer structure with the third layer 8c made of a seed is formed by depositing a metal material or nitride on the outer periphery of the light transmitting member 7 by a sputtering method, a vapor deposition method, an ion plating method, or the like.
It is formed by sequentially applying a predetermined thickness by a plating method or the like.

【0039】また、さらにこの金属膜8をチタン、チタ
ン−タングステン、窒化タンタルの少なくとも1種から
成る第1層8aと、白金、ニッケル、ニッケルークロム
の少なくとも1種から成る第2層8bと、金、白金、銅
の少なくとも1種から成る第3層8cとで形成する場
合、第1層8aの層厚は500Å未満となると金属膜8
の透光性部材7に対する接合強度が弱くなる傾向にあ
る。また2000Åを超えると透光性部材7に第1層8
aを被着させる際に第1層8a中に大きな応力が発生内
在し、この内在応力によって第1層8aが透光性部材7
より剥離し易くなる傾向にある。したがって、第1層8
aの厚みは500Åから2000Åの範囲としておくこ
とが好ましい。
Further, the metal film 8 is formed of a first layer 8a made of at least one of titanium, titanium-tungsten, and tantalum nitride, a second layer 8b made of at least one of platinum, nickel, and nickel-chromium. When the third layer 8c made of at least one of gold, platinum and copper is used, if the thickness of the first layer 8a is less than 500 °, the metal film 8
Tends to weaken the bonding strength to the light transmitting member 7. If the thickness exceeds 2000 °, the first layer 8
a, large stress is generated inside the first layer 8a when the first layer 8a is applied, and the first layer 8a
It tends to be more easily peeled. Therefore, the first layer 8
It is preferable that the thickness of a is set in the range of 500 ° to 2000 °.

【0040】また、第2層8bの層厚は500Å未満と
なると透光性部材7を固定部材6にロウ付けする際の熱
によって第1層8aが第3層8cに拡散するのを有効に
防止することができず、金属膜8の透光性部材7に対す
る接合強度が低下してしまう危険性がある。一方、10
000Åを超えると第1層8a上に第2層8bを被着さ
せる際に第2層8b中に大きな応力が発生内在し、この
内在応力によって第2層8bが第1層8aより剥離し易
くなる傾向にある。したがって、第2層8bの厚みは5
00Åから10000Åの範囲としておくことが好まし
い。
When the thickness of the second layer 8b is less than 500 °, the first layer 8a is effectively prevented from diffusing into the third layer 8c due to the heat generated when the translucent member 7 is brazed to the fixing member 6. This cannot be prevented, and there is a risk that the bonding strength of the metal film 8 to the translucent member 7 may be reduced. On the other hand, 10
If it exceeds 000 °, a large stress is generated in the second layer 8b when the second layer 8b is applied on the first layer 8a, and the second layer 8b is easily separated from the first layer 8a due to the intrinsic stress. Tend to be. Therefore, the thickness of the second layer 8b is 5
It is preferable to set the range between 00 ° and 10000 °.

【0041】また、第3層8cの層厚は0.5μm未満
であると金属膜8に対するロウ材の濡れ性が大きく改善
されず、透光性部材7を固定部材6に強固にロウ付け取
着するのが困難となる傾向にある。一方、5μmを超え
ると第2層8b上に第3層8cを被着させる際に第3層
8c中に大きな応力が発生内在し、この内在応力によっ
て第3層8cが第2層8bより剥離し易くなる傾向にあ
る。したがって、第3層8cの厚みは0.5μmから5
μmの範囲としておくことが好ましい。
If the thickness of the third layer 8c is less than 0.5 μm, the wettability of the brazing material to the metal film 8 is not significantly improved, and the light transmitting member 7 is firmly brazed to the fixing member 6. It tends to be difficult to wear. On the other hand, if it exceeds 5 μm, a large stress is generated in the third layer 8c when the third layer 8c is deposited on the second layer 8b, and the third layer 8c is separated from the second layer 8b due to the intrinsic stress. It tends to be easier. Therefore, the thickness of the third layer 8c is 0.5 μm to 5 μm.
It is preferable to keep the range of μm.

【0042】さらにこの枠体2はその側部に切欠部2b
が形成されており、この切欠部2bにはセラミック端子
体10が挿着されている。
Further, the frame 2 has a notch 2b on its side.
Are formed, and a ceramic terminal body 10 is inserted into the notch 2b.

【0043】このセラミック端子体10は電気絶縁材料
から成る絶縁体11と複数個のメタライズ配線層12と
から成り、メタライズ配線層12を枠体2に対し電気的
絶縁をもって枠体2の内側から外側にかけて配設する作
用をなし、絶縁体11の側面に予めメタライズ金属層を
被着させておくとともに、このメタライズ金属層を枠体
2の切欠部2a内壁面に銀ロウ等のロウ材を介し取着す
ることによって枠体2の切欠部2aに挿着される。
The ceramic terminal 10 comprises an insulator 11 made of an electrically insulating material and a plurality of metallized wiring layers 12. The metallized wiring layer 12 is electrically insulated from the frame 2 from the inside to the outside of the frame 2. A metallized metal layer is applied to the side surface of the insulator 11 in advance, and the metallized metal layer is applied to the inner wall surface of the cutout 2a of the frame 2 through a brazing material such as silver braze. By being attached, it is inserted into the notch 2a of the frame 2.

【0044】このセラミック端子体10の絶縁体11は
酸化アルミニウム質焼結体やムライト質焼結体、ガラス
セラミック焼結体等から成り、その製作方法は、例えば
酸化アルミニウム質焼結体から成る場合には、前記枠状
の基体1についての酸化アルミニウム質焼結体の場合の
製作方法と同様である。
The insulator 11 of the ceramic terminal body 10 is made of an aluminum oxide sintered body, a mullite sintered body, a glass ceramic sintered body, or the like. Is the same as the manufacturing method of the frame-shaped substrate 1 in the case of the aluminum oxide sintered body.

【0045】また、このセラミック端子体10には枠体
2の内側から外側にかけて導出する複数個のメタライズ
配線層12が埋設されており、このメタライズ配線層1
2の枠体2の内側に位置する領域には光半導体素子4の
各電極がボンディングワイヤ13を介して電気的に接続
され、また枠体2の外側に位置する領域には外部電気回
路と接続される外部リ−ド端子14が銀ロウ等のロウ材
を介し取着されている。
A plurality of metallized wiring layers 12 extending from the inside to the outside of the frame 2 are buried in the ceramic terminal body 10.
Each electrode of the optical semiconductor element 4 is electrically connected to a region located inside the second frame 2 via a bonding wire 13, and is connected to an external electric circuit in a region located outside the second frame 2. An external lead terminal 14 is attached via a brazing material such as silver brazing.

【0046】このメタライズ配線層12は光半導体素子
4の各電極を外部電気回路に接続する際の導電路として
作用し、タングステン、モリブデン、マンガン等の高融
点金属粉末により形成されている。
The metallized wiring layer 12 functions as a conductive path when connecting each electrode of the optical semiconductor element 4 to an external electric circuit, and is formed of a high melting point metal powder such as tungsten, molybdenum, and manganese.

【0047】また、メタライズ配線層12はタングステ
ン、モリブデン、マンガン等の高融点金属粉末に適当な
有機バインダ、溶剤等を添加混合して得た金属ペースト
を絶縁体11となるセラミックグリーンシートに予め従
来周知のスクリ−ン印刷法により所定パタ−ンに印刷塗
布した後に焼成することによって絶縁体11に形成され
る。
The metallized wiring layer 12 is formed by adding a metal paste obtained by adding an appropriate organic binder, a solvent and the like to a high melting point metal powder such as tungsten, molybdenum, manganese or the like to a ceramic green sheet serving as the insulator 11 in advance. It is formed on the insulator 11 by printing and applying a predetermined pattern by a well-known screen printing method and then firing.

【0048】なお、このメタライズ配線層12はその露
出する表面にニッケル、金等の耐蝕性に優れ、かつロウ
材との濡れ性に優れる金属を1μm〜20μmの厚みに
メッキ法により被着させておくと、メタライズ配線層1
2の酸化腐蝕を有効に防止することができるとともにメ
タライズ配線層12への外部リード端子14のロウ付け
を強固となすことができる。従って、このメタライズ配
線層12は、その露出する表面にニッケル、金等の耐蝕
性に優れ、かつロウ材との濡れ性に優れる金属を1μm
〜20μmの厚みに被着させておくことが好ましい。
The metallized wiring layer 12 is formed by coating a metal having excellent corrosion resistance such as nickel and gold and having excellent wettability with a brazing material to a thickness of 1 μm to 20 μm on an exposed surface by plating. In other words, metallized wiring layer 1
2 can be effectively prevented, and the brazing of the external lead terminals 14 to the metallized wiring layer 12 can be firmly performed. Therefore, the metallized wiring layer 12 is made of a metal having excellent corrosion resistance such as nickel and gold and excellent wettability with a brazing material of 1 μm on the exposed surface.
It is preferable to apply it to a thickness of 20 μm.

【0049】また、このメタライズ配線層12には外部
リード端子14が銀ロウ等のロウ材を介してロウ付け取
着されており、この外部リード端子14は容器内部に収
容する光半導体素子4の各電極を外部電気回路に電気的
に接続する作用をなし、外部リード端子14を外部電気
回路に接続することによって容器内部に収容される光半
導体素子4はボンディングワイヤ13、メタライズ配線
層12および外部リード端子14を介して外部電気回路
に接続されることとなる。
External lead terminals 14 are brazed to the metallized wiring layer 12 via a brazing material such as silver brazing. The external lead terminals 14 are provided for the optical semiconductor element 4 housed in the container. The optical semiconductor element 4 accommodated in the container by connecting each electrode to an external electric circuit and connecting the external lead terminal 14 to the external electric circuit is connected to the bonding wire 13, the metallized wiring layer 12, and the outside. It will be connected to an external electric circuit via the lead terminal 14.

【0050】この外部リード端子14は鉄−ニッケル−
コバルト合金や鉄−ニッケル合金等の金属材料から成
り、例えば、これらの合金の金属材料から成るインゴッ
ト(塊)に圧延加工法や打ち抜き加工法等、従来周知の
金属加工法を施すことによって所定の形状に形成され
る。
The external lead terminals 14 are made of iron-nickel-
It is made of a metal material such as a cobalt alloy or an iron-nickel alloy. For example, a predetermined well-known metal working method such as a rolling method or a punching method is applied to an ingot made of the metal material of these alloys. It is formed into a shape.

【0051】さらに、この枠体2はその上面に、例え
ば、鉄−ニッケル−コバルト合金や鉄−ニッケル合金等
の金属材料から成る蓋体3が接合され、これによって枠
状の基体1と枠体2と蓋体3とからなる容器の内部に光
半導体素子4が気密に封止されることとなる。
Further, a lid 3 made of a metal material such as, for example, an iron-nickel-cobalt alloy or an iron-nickel alloy is joined to the upper surface of the frame 2 to thereby form a frame-shaped base 1 and a frame. The optical semiconductor element 4 is hermetically sealed inside a container including the lid 2 and the lid 3.

【0052】この蓋体3の枠体2上面への接合は、例え
ば、シームウェルド法等の溶接によって行なわれる。
The joining of the lid 3 to the upper surface of the frame 2 is performed by, for example, welding such as a seam welding method.

【0053】かくして本発明の光半導体素子収納用パッ
ケージによれば、枠状の基体1の略中央部に貫通した孔
部1aを設け、この孔部1aに、冷却部材5の上面側の
セラミック基板5bの側面および下面側のセラミック基
板5cの側面の少なくとも一方に施されたメタライズ層
5dとが低温半田を介して接着固定され、この冷却部材
5の光半導体素子載置部5aに光半導体素子4を載置固
定するとともに光半導体素子4の各電極をボンディング
ワイヤ13を介して外部リード端子14に電気的に接続
し、次に枠体2の上面に蓋体3を接合させ、枠状の基体
1と冷却部材5と枠体2と蓋体3とから成る容器内部に
光半導体素子4を収容し、最後に枠体2に取着させた筒
状の固定部材6に光ファイバ部材9を取着接続させるこ
とによって最終製品としての光半導体装置となる。そし
て、外部電気回路から供給される駆動信号によって光半
導体素子4に光を励起させ、この励起した光を非晶質ガ
ラスから成る透光性部材7を通して光ファイバ部材9に
授受させるとともに、この光ファイバ部材9の光ファイ
バ内を伝達させることによって高速光通信等に使用され
る。
Thus, according to the package for housing an optical semiconductor element of the present invention, a through-hole 1a is provided substantially at the center of the frame-shaped substrate 1, and the ceramic substrate on the upper surface side of the cooling member 5 is provided in the hole 1a. The metallized layer 5d applied to at least one of the side surface of the ceramic substrate 5c and the side surface of the ceramic substrate 5c on the lower surface is bonded and fixed via low-temperature solder, and the optical semiconductor element 4 is mounted on the optical semiconductor element mounting portion 5a of the cooling member 5. And the electrodes of the optical semiconductor element 4 are electrically connected to the external lead terminals 14 via the bonding wires 13, and then the lid 3 is joined to the upper surface of the frame 2 to form a frame-shaped base. The optical semiconductor element 4 is accommodated in a container including the cooling member 5, the cooling member 5, the frame 2, and the lid 3, and the optical fiber member 9 is finally mounted on the cylindrical fixing member 6 attached to the frame 2. The final product by connecting The optical semiconductor device as. Then, light is excited in the optical semiconductor element 4 by a drive signal supplied from an external electric circuit, and the excited light is transmitted to and received from the optical fiber member 9 through the transparent member 7 made of amorphous glass. It is used for high-speed optical communication and the like by transmitting the inside of the optical fiber of the fiber member 9.

【0054】なお、本発明は上述の実施例に限定される
ものではなく、本発明の要旨を逸脱しない範囲であれば
種々の変更は可能である。例えば冷却部材5は、上面側
のセラミック基板5bの長さが、下面側のセラミック基
板5cの長さよりも長く、枠状の基体1の中央部に設け
られた貫通された孔部1aの側面と、下面側のセラミッ
ク基板5cの側面のみに施されたメタライズ層5dと
が、錫−鉛半田や錫−銀半田等の低温半田を介して接着
固定されるようなものとしてもよい。
The present invention is not limited to the above-described embodiment, and various changes can be made without departing from the gist of the present invention. For example, the cooling member 5 is configured such that the length of the ceramic substrate 5b on the upper surface side is longer than the length of the ceramic substrate 5c on the lower surface side, and the side surface of the through hole 1a provided in the central portion of the frame-shaped base body 1 Alternatively, the metallized layer 5d applied only to the side surface of the lower ceramic substrate 5c may be bonded and fixed via low-temperature solder such as tin-lead solder or tin-silver solder.

【0055】[0055]

【発明の効果】本発明の光半導体素子収納用パッケージ
によれば、光半導体素子から発せられる熱を放散させる
構造として、略中央部に貫通された孔部を有した枠状の
基体の内側すなわち、その孔部に、上面に光半導体素子
を載置するための載置部を有した上面側のセラミック基
板と、下面が前記枠状の基体の外部に露出した下面側の
セラミック基板と、それらの間に配設された電子冷却素
子とからなる冷却部材を挿着するために、少なくとも一
方のセラミック基板の側面にメタライズ層を設け、この
メタライズ層を介して枠状の基体の孔部の側面とロウ付
けされて成る構造としたことから、枠状の基体と冷却部
材とを強固に接合でき、かつ気密性に優れた金属接合す
なわちロウ付けを行なっているため、光半導体素子収納
用パッケージ内部に光半導体素子を気密に収容し、長期
間にわたり正常、かつ安定に作動させることができる。
According to the package for housing an optical semiconductor element of the present invention, as a structure for dissipating the heat generated from the optical semiconductor element, the inside of a frame-shaped base having a hole penetrated substantially at the center, that is, An upper surface-side ceramic substrate having a mounting portion for mounting an optical semiconductor element on the upper surface, a lower surface side ceramic substrate having a lower surface exposed to the outside of the frame-shaped base; A metallization layer is provided on at least one side surface of the ceramic substrate in order to insert a cooling member composed of an electronic cooling element disposed between them, and a side surface of the hole of the frame-shaped base is provided through the metallization layer. Since the frame-shaped base and the cooling member can be firmly joined together with the air-tight metal bonding, that is, brazing, the inside of the optical semiconductor element housing package is The optical semiconductor element housed in an airtight, can be actuated normally and stably for a long period of time.

【0056】また、冷却部材は枠状の基体の孔部に挿着
されているため、枠体は、冷却部材を枠状の基体に入り
込ませた分の高さ分は低くすることができ、その結果、
小型かつ軽量な光半導体素子収納用パッケージとするこ
とができる。
Also, since the cooling member is inserted into the hole of the frame-shaped base, the height of the frame can be reduced by the amount of the cooling member inserted into the frame-shaped base. as a result,
A compact and lightweight package for housing an optical semiconductor element can be obtained.

【0057】また、光半導体素子を冷却部材で冷却しつ
つ外部電気回路から供給される駆動信号によって光励起
させた場合、冷却部材から放出される熱は、枠状の基体
を介することなく、その外部に露出した下面から放散さ
れるので、光半導体素子に作用することはなく、その結
果、光半導体素子の冷却部材による冷却効率を高いもの
とすることができ、低出力の冷却部材でも光半導体素子
を常に適温の状態で作動させることができる。
Further, when the optical semiconductor element is optically excited by a drive signal supplied from an external electric circuit while being cooled by the cooling member, the heat released from the cooling member does not pass through the frame-shaped base but to the outside. Since it is radiated from the exposed lower surface, it does not act on the optical semiconductor element, and as a result, the cooling efficiency of the optical semiconductor element by the cooling member can be increased. Can always be operated at an appropriate temperature.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の光半導体素子収納用パッケージの実施
の形態の一例を示す断面図である。
FIG. 1 is a cross-sectional view showing an example of an embodiment of an optical semiconductor element housing package of the present invention.

【図2】図1に示す光半導体素子収納用パッケージの蓋
体を除いた平面図である。
FIG. 2 is a plan view of the package for housing an optical semiconductor element shown in FIG. 1 excluding a lid.

【図3】図1に示した冷却部材とは別な形状の冷却部材
を用いた例の要部拡大断面図である。
FIG. 3 is an enlarged sectional view of a main part of an example using a cooling member having a shape different from that of the cooling member shown in FIG. 1;

【図4】図1に示す光半導体素子収納用パッケージに使
用される透光性部材を説明するための要部拡大断面図で
ある。
FIG. 4 is an enlarged sectional view of a main part for explaining a light-transmitting member used in the package for housing an optical semiconductor element shown in FIG. 1;

【符号の説明】[Explanation of symbols]

1・・・・枠状の基体 2・・・・枠体 2a・・貫通孔 2b・・切欠部 3・・・・蓋体 4・・・・光半導体素子 5・・・・冷却部材 5a・・載置部 5b・・上面側のセラミック基板 5c・・下面側のセラミック基板 5d・・メタライズ層 5e・・電子冷却素子 6・・・・固定部材 9・・・・光ファイバ部材 10・・・セラミック端子体 11・・・絶縁体 12・・・メタライズ配線層 DESCRIPTION OF SYMBOLS 1 ... Frame-shaped base | substrate 2 ... Frame 2a ... Through-hole 2b ... Notch 3 ... Lid 4 ... Optical semiconductor element 5 ... Cooling member 5a ... Mounting part 5b Upper ceramic substrate 5c Lower ceramic substrate 5d Metallization layer 5e Electronic cooling element 6 Fixing member 9 Optical fiber member 10 Ceramic terminal body 11 ・ ・ ・ Insulator 12 ・ ・ ・ Metalized wiring layer

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 33/00 H01S 5/022 H01S 5/022 H01L 23/36 M ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat ゛ (Reference) H01L 33/00 H01S 5/022 H01S 5/022 H01L 23/36 M

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 枠状の基体と、該基体の内側に挿着さ
れ、上面に光半導体素子が載置される載置部を有すると
ともに下面を外部に露出させた冷却部材と、前記基体上
に前記載置部を囲繞するようにして取着され、側部に貫
通孔及び切欠部を有する枠体と、前記貫通孔に取着さ
れ、光ファイバ部材が挿入固定される筒状の固定部材
と、前記切欠部に挿着され、絶縁体に前記光半導体素子
の各電極が電気的に接続されるメタライズ配線層が形成
されているセラミック端子体と、前記枠体の上面に取着
され、光半導体素子を気密に封止する蓋体とからなる光
半導体素子収納用パッケージであって、前記冷却部材
は、上下のセラミック基板間に電子冷却素子を配設して
成り、少なくとも一方の前記セラミック基板の側面に形
成されたメタライズ層を介して前記基体の内側にロウ付
けされていることを特徴とする光半導体素子収納用パッ
ケージ。
1. A cooling member having a frame-shaped base, a mounting portion inserted inside the base, and having an upper surface on which an optical semiconductor element is mounted and having a lower surface exposed to the outside, A frame body having a through hole and a cutout on the side, and a cylindrical fixing member attached to the through hole and into which the optical fiber member is inserted and fixed. And a ceramic terminal body in which a metallized wiring layer in which an electrode of the optical semiconductor element is electrically connected to an insulator is formed, and is attached to an upper surface of the frame body. An optical semiconductor element housing package comprising a lid for hermetically sealing the optical semiconductor element, wherein the cooling member is provided by disposing an electronic cooling element between upper and lower ceramic substrates; Through the metallized layer formed on the side of the substrate A package for housing an optical semiconductor element, wherein the package is brazed inside the base.
JP18326699A 1999-06-29 1999-06-29 Optical semiconductor element storage package Expired - Fee Related JP3619393B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18326699A JP3619393B2 (en) 1999-06-29 1999-06-29 Optical semiconductor element storage package

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Publication Number Publication Date
JP2001015635A true JP2001015635A (en) 2001-01-19
JP3619393B2 JP3619393B2 (en) 2005-02-09

Family

ID=16132666

Family Applications (1)

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Country Link
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* Cited by examiner, † Cited by third party
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JP2008108781A (en) * 2006-10-23 2008-05-08 Fujikura Ltd Cooling system
WO2008081758A1 (en) 2006-12-28 2008-07-10 Tokuyama Corporation Process for producing metallized aluminum nitride substrate
JP2008538658A (en) * 2005-04-21 2008-10-30 エイオーネックス・テクノロジーズ・インコーポレイテッド Intermediate substrate and manufacturing method thereof
US7520683B2 (en) 2004-09-06 2009-04-21 Opnext Japan, Inc. Optical module
KR101055095B1 (en) 2010-03-09 2011-08-08 엘지이노텍 주식회사 Light emitting device
JP2016167494A (en) * 2015-03-09 2016-09-15 アイシン精機株式会社 Thermoelectric conversion device
US9851087B2 (en) 2015-03-11 2017-12-26 Panasonic Intellectual Property Management Co., Ltd. Light emitting device and lighting apparatus

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7520683B2 (en) 2004-09-06 2009-04-21 Opnext Japan, Inc. Optical module
JP2008538658A (en) * 2005-04-21 2008-10-30 エイオーネックス・テクノロジーズ・インコーポレイテッド Intermediate substrate and manufacturing method thereof
JP2008108781A (en) * 2006-10-23 2008-05-08 Fujikura Ltd Cooling system
WO2008081758A1 (en) 2006-12-28 2008-07-10 Tokuyama Corporation Process for producing metallized aluminum nitride substrate
EP2099068A1 (en) * 2006-12-28 2009-09-09 Tokuyama Corporation Process for producing metallized aluminum nitride substrate
EP2099068A4 (en) * 2006-12-28 2011-01-26 Tokuyama Corp Process for producing metallized aluminum nitride substrate
KR101055095B1 (en) 2010-03-09 2011-08-08 엘지이노텍 주식회사 Light emitting device
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