JP2000323620A - Semiconductor mounting board and manufacture thereof, and method of mounting semiconductor chip - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture and provide at low cost a semiconductor mounting board having functions of low electric resistance with a semiconductor chip and high mechanical connection, and further, to obtain a method of mounting semiconductor chip easy in processing and excellent in productivity. SOLUTION: A thermosetting insulation resin layer 16 softened by heating and reveals its adhesive property is formed on the surface of the side on which a semiconductor chip is equipped. At the same time, an independent conductive terminal 18 is formed on the part of the surface in which an electrode of the semiconductor chip is connected to a conductive wiring 12 of a wiring board. When packaging the semiconductor chip, the thermosetting insulation resin layer 16 is heated and softened, and the conductive terminal 18 is embedded and passed through the resin layer by pressing. Thus, the electrode of the semiconductor chip is connected to the conductive wiring 12.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor mounting substrate for mounting a semiconductor chip by flip-chip connection, a method of manufacturing the same, and a method of mounting a semiconductor chip.

[0002]

2. Description of the Related Art In recent years, with the demand for higher functionality and lighter, thinner and smaller electronic devices, high-density integration and high-density mounting of electronic components have been progressing. Semiconductor packages have been increasingly miniaturized and have more pins than ever before.

[0003] With the miniaturization of semiconductor packages,
In a package using a conventional lead frame, the miniaturization has reached its limit. Recently, a BGA (Ball (Ball)) has been used in which a chip is mounted on a circuit board.
Grid Array) and CSP (Chip Sca)
le Package), a new area mounting type packaging system has been proposed. In these semiconductor packages, various insulating materials such as plastics and ceramics, which are called semiconductor mounting substrates, having electrodes of a semiconductor chip and a function of a lead frame of a conventional semiconductor package, and terminals of a substrate composed of conductive wiring are provided. Electrical connection methods include wire bonding and TA.
B (Tape Automated Bonding)
A method, and furthermore, an FC (Flip Chip) method and the like are known. Recently, BGA and CSP structures using an FC connection method, which are advantageous for miniaturization of a semiconductor package, have been actively proposed.

In this FC connection method, generally, connection bumps are formed on electrodes of a semiconductor chip in advance by electroplating, and the bumps and terminals on the substrate are aligned and connected by thermocompression bonding. The process of forming bumps on the electrodes of a semiconductor chip is complicated, the manufacturing cost of the bumps is high, and the gap between the chip and the substrate is filled with an insulating resin called underfill in order to obtain the moisture-proof reliability of the bump connection. It is necessary to seal the bump connection portion, and a step of filling and curing the underfill is required. Therefore, there is a problem that the manufacturing process is complicated and the manufacturing cost is increased.

Therefore, instead of underfill, a method of using an anisotropic conductive sheet as a connection material for electrically connecting and mechanically bonding a semiconductor chip and a substrate has been focused on and studied. The anisotropic conductive sheet is provided with an adhesive property. Usually, the anisotropic conductive sheet is pasted on a substrate, and then a semiconductor chip is mounted, and electrical connection and mechanical connection are simultaneously performed. Such an anisotropic conductive sheet system has been increasingly attracting attention as an effective means for reducing the size and cost of semiconductor packages, and the following anisotropic conductive sheet has been proposed.

FIG. 3 is a cross-sectional view showing a typical example of a conventionally proposed semiconductor chip mounting method using an anisotropic conductive sheet. The anisotropic conductive sheet 33 is obtained by dispersing conductive fine particles 35 in a thermoplastic or thermosetting resin. The resin flows at the time of thermocompression bonding, and the electrical connection in the thickness direction is performed by the conductive fine particles 35 sandwiched between the electrodes 34 of the semiconductor chip 31 serving as connection terminals and the conductor wiring of the semiconductor mounting substrate 32. LCD panel and TCP (Tape Carrier Package)
e) is used for electrical connection and the like. The anisotropic conductive sheet having such a structure is characterized in that it can be manufactured by a relatively simple process of dispersing conductive fine particles in a resin, and that the alignment when bonding to a substrate can be performed relatively roughly. . However, since the electrical connection is obtained by the conductive fine particles that are stochastically present between the electrodes of the semiconductor chip and the terminals of the substrate, the conductive fine particles are made finer and more dispersed as the pitch becomes narrower. It is necessary to make it. As a result, the particle density is increased. As a result, the distance between the particles is reduced and the electrical insulation is reduced. The connection area between the particles and the electrode and the terminal is reduced to increase the connection resistance. And so on.

Recently, an example as shown in FIG. 4 has been proposed. A semiconductor mounting substrate in which a semiconductor chip and a substrate are electrically connected and mechanically bonded without forming a bump on the semiconductor chip. Adhesive layer 46 on the surface
The resin film 43 has a structure in which a minute through hole is made by a drill or a laser, and then the inside of the through hole is filled with a conductor 45 by a method such as plating or conductive paste printing. At the time of thermocompression bonding, the adhesive layer 46 flows to bond the semiconductor chip 41 and the semiconductor mounting substrate 32,
The electrical connection is obtained by the conductor 45 at a portion sandwiched between the electrode 44 of the semiconductor chip 41 as a connection terminal and the conductor wiring 47 of the semiconductor mounting substrate. Such a structure is characterized in that since the electrodes of the semiconductor chip and the terminals of the substrate and the conductor are arranged facing each other, the electrical connection is excellent and the electrical insulation between adjacent conductors is also excellent. And

However, since fine drilling with high positional accuracy is required, drilling with a laser is required, and there is a problem that the production cost is increased due to the low productivity and high running cost, which are the drawbacks of the laser. . In addition, although the formation of a conductor in a minute hole is usually performed by plating, as the hole diameter becomes smaller, uniform plating becomes more difficult, the height of the conductor tends to vary, and the quality is deteriorated such that electrical connection cannot be performed at the time of connection. There is a problem.

[0009]

DISCLOSURE OF THE INVENTION The present invention has been made in view of the above-mentioned various problems that the conventional method for electrically and mechanically connecting a semiconductor chip and a substrate by plating bumps or anisotropic conductive sheets has. In view of the above, it has been made as a result of earnest research, and it is possible to manufacture and provide a semiconductor mounting substrate having a function of low electric resistance and strong mechanical connection with a semiconductor chip at low cost, and furthermore, It is an object of the present invention to provide a semiconductor chip mounting method excellent in productivity.

[0010]

That is, the present invention relates to a wiring board for mounting a semiconductor for mounting a semiconductor chip,
A thermosetting insulating resin layer which is softened by heating and exhibits adhesiveness is formed on the surface on which the semiconductor chip is mounted, and the electrodes of the semiconductor chip and the conductor wiring of the wiring board on the surface of the thermosetting insulating resin layer. And an independent conductor terminal is formed at a portion where the thermosetting insulating resin layer has a melt viscosity of 200 to 20,000 at the time of softening by heating.
A semiconductor mounting substrate characterized by being in a poise range.

A second aspect of the present invention is that a wiring board on which a semiconductor chip is mounted is formed of a copper foil and a thermosetting insulating resin layer which is softened by heating and exhibits adhesiveness. The method for producing a substrate for mounting a semiconductor, comprising: a step of bonding the layer sheets by applying heat and pressure; and a step of forming a conductor terminal by etching the copper foil of the two-layer sheet.

Further, a third aspect of the present invention is a step of aligning the conductor terminals of the semiconductor mounting substrate with electrodes of the semiconductor chip so as to face each other, and heating the semiconductor chip from the back surface thereof. , The electrodes of the semiconductor chip are connected to the conductor terminals, and the conductor terminals are buried vertically through the thermosetting insulating resin layer, and the conductor terminals are connected to the conductor wiring of the wiring board. Bonding a semiconductor chip to a substrate.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the drawings. FIG. 1 is a cross-sectional view showing a typical manufacturing method for obtaining a semiconductor mounting substrate of the present invention.

First, a wiring board 11 and a two-layer sheet 17 are prepared (a). The wiring board 11 includes a conductor wiring 12 including at least an insulating resin 13, a connection terminal for connecting an electrode of a semiconductor chip, and a connection terminal for connecting to a terminal of a mounting board. May be formed with a solder resist 14. Au, Ni, Pd, In, Pb, and Sn are formed on the surface of the conductor wiring 12.
A coating of a metal such as these and alloys thereof may be provided by electroless plating or electrolytic plating. A flexible wiring board having an insulating layer of polyimide resin or polyester resin, a rigid wiring board having an insulating layer of epoxy resin, phenol resin or the like, and further, Al ₂ O ₃ or AlN
A ceramic wiring substrate using a ceramic such as an insulating layer can be used.

The two-layer sheet 17 is composed of two layers, a copper foil 15 and a thermosetting insulating resin layer 16. A thermosetting insulating resin varnish is coated on the surface of the copper foil 15 with conductor terminals 18 and conductor wires 12 to be described later. The thickness of the thermosetting insulating resin layer 16 at a portion sandwiched by the above is in a range of 0.7 to 1.5 times the thickness of the conductor terminal 18 plus the thickness of a surface treatment 19 described later. It is possible to adjust the amount of coating so as to enter the coating, apply the coating uniformly, and then dry it. The thickness of the thermosetting insulating resin layer 16 at a portion sandwiched between the conductor terminal 18 and the conductor wiring 12 is the same as that of the conductor terminal 18.
When the thickness is smaller than 0.7 times the thickness obtained by adding the thickness of the surface treatment 19 to the thickness of the surface treatment 19, the conductor terminals 18 become pillars when the semiconductor chip is mounted, and the distance between the semiconductor chip and the thermosetting insulating resin layer 16 is reduced. In the case where the gap is formed, the semiconductor chip cannot be bonded and the electrical reliability is easily lowered, and if it is larger than 1.5 times, the conductor terminal 18 cannot penetrate the thermosetting insulating resin layer 16 and the conductive Is more likely to occur.

The resin used for the thermosetting insulating resin layer 16 may be, for example, one or more resins such as epoxy resin, maleimide resin, fluorine resin, acrylic resin, and silicone resin. They can be used in combination. Further, a thermoplastic resin having excellent sheet forming ability may be mixed and used. For example, polyamide resin, polyester resin, polyimide resin, urethane resin,
Polystyrene resin, synthetic rubber resin and the like.

Specific examples of the curing agent used for the resin of the thermosetting insulating resin layer include epoxy resins, which are latent curing agents such as dicyandiamide, imidazole compounds, organic acid hydrazide, diaminomaleonitrile, and melamine. Derivatives, amine imides, aromatic diazonium salts, diallyliodonium salts, triallylsulfonium salts, triallylselenium salts, ketimine compounds, etc.
Species or a mixture of plural types can be used. Coloring agents, inorganic fillers, various coupling agents, and the like may be added to these adhesive resins.

Next, the two-layer sheet 17 is laminated on the surface of the wiring board 11 on which the conductor wiring 12 is formed, on the side on which the semiconductor chip is mounted, by heating and pressing (b).

Subsequently, the copper foil 15 and the solder resist 1
4, a photosensitive resist film is formed on both surfaces, and conductor terminals 18 are formed through the steps of pattern exposure, resist development, copper etching, and photosensitive resist peeling (c).
Here, the photosensitive resist formed on the surface of the solder resist 14 is applied for the purpose of protecting the conductor wiring 12 from an etchant. The formation of the conductor terminal by the etching method serves the purpose of eliminating the variation in the height of the conductor as in the plating method, and reducing and stabilizing the conduction resistance.

Finally, a surface treatment 19 is applied to the conductor terminal 18 (d). This is performed to prevent oxidation of copper and to improve the electrical connection performance. Au, Ni, Pd, P
A method of electroless plating a metal or alloy such as b, Sn, In, or a Pb-Sn alloy by a flow solder method can also be used. As described above, the semiconductor mounting substrate of the present invention is obtained.

Next, a method of mounting a semiconductor chip on a semiconductor mounting board of the present invention will be described. FIG. 2 is a diagram showing a typical example.

First, the semiconductor mounting substrate 22 according to the present invention
Is placed at a predetermined position on the substrate receiving table 24 of the bonding apparatus. Next, the semiconductor chip 21 is suction-fixed to a heating / pressing tool 23 having a chip suction mechanism, and a positioning mark formed in advance on the semiconductor mounting substrate 22 and the semiconductor chip 21 is read by an image recognition device, and the conductor terminals are read. The electrode 25 and the electrode 26 are opposed to each other and accurately positioned. Simultaneously with the alignment, the melt viscosity of the thermosetting insulating resin layer 27 is set to
Temperature to become 200-20,000 poise (50-200
(A). If necessary, a heater may be built in the substrate receiving base 24, and the semiconductor mounting substrate 22 may be heated to soften the thermosetting insulating resin layer 27 in advance.

When the softening melt viscosity of the thermosetting insulating resin layer 27 is less than 200 poise, the flow of the insulating resin causes the conductor terminals 25 to be displaced from a desired position or the thickness of the thermosetting insulating resin layer 27 to be reduced. It becomes uneven. Conversely, if the softening melt viscosity exceeds 20,000 poise, it becomes difficult to embed and penetrate the conductor terminal 25 into the thermosetting insulating resin layer 27 at a predetermined pressure of the heating and pressing tool 23, and the conductor terminal 25 and the electrode 26 Connection failure. Depending on the combination of the materials of the conductor terminal 25 and the electrode 26, it is also possible to use ultrasonic waves together in order to obtain higher connectivity.

Next, the heating and pressing tool 23 is lowered,
The semiconductor chip 21 is pressed in parallel to the semiconductor mounting substrate 22. When the conductor terminal 25 and the electrode 26 come into contact with each other, the descent of the heating / pressing tool 23 is stopped once, and the heat of the semiconductor chip 21 is transmitted to the thermosetting insulating resin layer 27 via the conductor terminal 25, and When the temperature of the resin layer 27 reaches the desired temperature and melt viscosity, 1 to 30 kgf
Start pressurization at / cm ² . Thereby, the conductor terminal 2
5 is vertically buried and penetrates the thermosetting insulating resin layer 27, and the bottom thereof is connected to the conductor wiring 28 which is a connection terminal of the semiconductor mounting substrate 22. Further, the semiconductor chip 21 and the semiconductor mounting substrate 22 are heated to a temperature at which the thermosetting insulating resin layer 27 is thermoset in the pressurized state and maintained for a predetermined time, so that the thermosetting insulating resin layer 27 is formed. (B). Further, at this time, when ultrasonic waves are used in combination, the conductor terminals 25 and the electrodes 26 are alloy-connected, and the mechanical strength is further increased.

The thermosetting insulating resin layer 27 used at this time
Is a solid at room temperature, and can be buried and penetrated by heating the conductor terminal 25 when heated to the softening and melting temperature, and furthermore, by heating to a high temperature, the semiconductor chip 21 and the semiconductor mounting substrate 22 can be simultaneously bonded while being thermally cured. Things. The softening and melting temperature at which the thermosetting insulating resin layer 27 does not thermoset is preferably in the range of 50 ° C to 200 ° C. 50 ℃
In the case of a thermosetting insulating resin having a lower softening / melting temperature, tack occurs on the sheet surface, and workability is significantly reduced. Also,
In the thermosetting insulating resin having a softening and melting temperature exceeding 200 ° C., when the conductor terminal penetrates the thermosetting insulating resin layer and makes contact between the conductors for electrical conduction, the thermosetting proceeds before penetrating. May cause poor connection. on the other hand,
It is important that the thermosetting start temperature is higher than the softening and melting temperature by 10 ° C. or more. If the temperature difference is smaller than this, it is difficult to control the temperature, which leads to the same connection failure as described above. As described above, the semiconductor chip 21 is mounted on the semiconductor mounting substrate 22.
(C).

[0026]

EXAMPLES The present invention will be described in more detail with reference to the following Examples, but it should not be construed that the invention is limited thereto.

Example 1 Rolled copper foil having a thickness of 18 μm (FX-BSH-35, Mitsui Kinzoku Mining Co., Ltd.)
Was coated with an epoxy resin varnish and dried to obtain a two-layer sheet composed of a copper foil and a thermosetting insulating resin layer having a thickness of 40 μm. The two-layer sheet was laminated on a surface of a flexible wiring board using a polyimide resin as an insulating layer, on a side on which a semiconductor chip was mounted. The obtained substrate was subjected to dry film lamination, exposure, development, copper foil etching, and dry film peeling steps to obtain a diameter of 100 μm.
A semiconductor mounting substrate on which a m-shaped cylindrical conductor terminal was formed was manufactured. At this time, the thickness of the thermosetting insulating resin layer between the conductor terminal and the conductor wiring was 0.7 times the conductor terminal.

The obtained substrate for mounting a semiconductor was placed on a substrate holder of a bonding apparatus, and after positioning with the upper tool on which the semiconductor chip was fixed by suction, the substrate holder and the upper tool were heated to 80 ° C. At this temperature, the melt viscosity of the thermosetting insulating resin layer was 2000 poise, and no thermosetting reaction occurred. By subsequent pressure bonding at a pressure of 10 kgf / cm ² , the conductor terminal vertically penetrated and penetrated the thermosetting insulating resin layer, and came into contact with the wiring conductor of the flexible wiring board. After that, while continuing to pressurize,
Set the temperature of the board holder and upper tool of the bonding machine to 1
The substrate was held at 80 ° C. for 1 minute to fix the semiconductor mounting substrate and the semiconductor chip. The conduction resistance was 2 mΩ / one conductor terminal, and there was almost no change in the conduction resistance value at −50 / 125 ° C. and 500 cycles.

Example 2 Electrolytic copper foil having a thickness of 70 μm (VLP, manufactured by Mitsui Kinzoku Mining Co., Ltd.)
Then, an epoxy-based resin varnish was applied and dried to obtain a two-layer sheet composed of a copper foil and a thermosetting insulating resin layer having a thickness of 80 μm. The two-layer sheet was laminated on a surface of a flexible wiring board using a polyimide resin as an insulating layer, on a side on which a semiconductor chip was mounted. In addition, 6Sn / 4Pb solder was previously coated with a thickness of 5 μm on a portion of the conductor wiring of the flexible wiring board which is to be joined to the conductor terminal. The obtained substrate was subjected to dry film lamination, exposure, development, copper foil etching, and dry film peeling steps to produce a semiconductor mounting substrate on which cylindrical conductive terminals having a diameter of 100 μm were formed. Further, the exposed surfaces of the conductor terminals were subjected to electroless 6Sn / 4Pb solder plating. At this time, the thickness of the thermosetting insulating resin layer between the conductor terminal and the conductor wiring was 0.8 times the conductor terminal.

The obtained substrate for mounting a semiconductor was placed on a substrate holder of a bonding apparatus, and after positioning with a upper tool to which semiconductor chips were fixed by suction, the substrate holder and the upper tool were heated to 150 ° C. At this temperature, the melt viscosity of the thermosetting insulating resin layer was 900 poise, and no thermosetting reaction had occurred. By subsequent compression bonding under a pressure of 12 kgf / cm ² , the conductor terminal vertically penetrated and penetrated the thermosetting insulating resin layer, and came into contact with the wiring conductor of the flexible wiring board. After that, while continuing to pressurize,
Adjust the temperature of the board holder and upper tool of the bonding machine.
The temperature was maintained at 200 ° C. for 1 minute to fix the semiconductor mounting substrate and the semiconductor chip. Furthermore, by heating to 260 ° C., soldering was performed between the conductor wiring and the conductor terminal by soldering to strengthen the bonding. The conduction resistance is 4 mΩ / conductor terminal 1
And there was almost no change in the conduction resistance value at −50 / 125 ° C. for 1000 cycles.

Comparative Example 1 Conductive fine particles composed of Au / Ni / resin core (particle size: about 5 μm) were mixed with an epoxy resin varnish by stirring at 3 wt% to form a film to prepare an anisotropic conductive sheet. The same flexible wiring board as that used in this example was attached to the surface of the same flexible wiring board on which the semiconductor chip was mounted.
Temporary pressure bonding was performed at 5 ° C. and 5 kgf / cm ² . The semiconductor mounting substrate with the anisotropic conductive sheet manufactured in this manner is placed on a substrate receiving table of a bonding apparatus, and the semiconductor chip with the Au stud bump is fixed by suction. Semiconductor mounting board with conductive sheet and Au
170 ° C, 20kg with a semiconductor chip with stud bumps
It was crimped under the condition of f / cm ² and fixed. The conductor wiring of the semiconductor mounting substrate and the bow of the semiconductor chip contacted each other via the conductive fine particles.

In Examples 1 and 2 and Comparative Example 1,
Table 1 summarizes the evaluation results after mounting the semiconductor chip. From these results, the use of the semiconductor mounting substrate of the present invention makes it possible to compare the conduction resistance per terminal and the resistance value in a TC test (temperature cycle test) as compared with the conventional mounting method using an anisotropic conductive sheet. Is significantly reduced, the occurrence of disconnection failure in the TC test is almost eliminated,
It can be seen that the semiconductor mounting substrate of the present invention is extremely excellent.

[0033]

[Table 1]

[0034]

As described in detail above, according to the present invention,
A semiconductor mounting substrate having excellent electrical and mechanical connection functions with a semiconductor chip can be manufactured and provided at low cost, and an easy and highly productive mounting method can be provided.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a typical method for manufacturing a semiconductor mounting substrate according to the present invention.

FIG. 2 is a cross-sectional view showing a typical example of a mounting method using a semiconductor mounting substrate according to the present invention.

FIG. 3 is a cross-sectional view showing a typical example of a semiconductor chip mounting method using a conventional anisotropic conductive sheet in which conductive fine particles are dispersed.

FIG. 4 is a sectional view showing a typical example of a semiconductor chip mounting method using a conventional resin film in which a through hole is filled with a conductor.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 11 Wiring board 12, 28, 36, 47 Conductor wiring 13 Insulating resin 14 Solder resist 15 Copper foil 16, 27 Thermosetting insulating resin layer 17 Two-layer sheet 18, 25 Conductor terminal 19 Surface treatment 21, 31, 41 Semiconductor chip 22 , 32, 42 Semiconductor mounting substrate 23 Heating and pressurizing tool 24 Substrate pedestal 26, 34, 44 Electrode 33 Anisotropic conductive sheet in which conductive fine particles are dispersed 35 Conductive fine particles 43 Resin film in which through holes are filled with conductive material 45 Conductor 46 Adhesive layer

 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kensuke Nakamura 2-5-8 Higashishinagawa, Shinagawa-ku, Tokyo Sumitomo Bakelite Co., Ltd. F-term (reference) 5E319 AA03 AB05 BB20 CC01 CD04 5F044 KK02 KK03 KK04 KK07 KK13 KK17 KK18 KK19 KK21 PP16 PP17 PP19

Claims (5)

[Claims] 1. A semiconductor mounting wiring board for mounting a semiconductor chip, wherein a thermosetting insulating resin layer which is softened by heating and exhibits adhesiveness is formed on a surface on a side on which the semiconductor chip is mounted. In the surface of the thermosetting insulating resin layer, an independent conductor terminal is formed at a portion connecting the electrode of the semiconductor chip and the conductor wiring of the wiring board, and when the thermosetting insulating resin layer is softened by heating. Wherein the melt viscosity is in the range of 200 to 20,000 poise. 2. The method according to claim 1, wherein the thickness of the conductive terminal is in the range of 0.7 to 1.5 times the thickness of the thermosetting insulating resin layer formed immediately below the conductive terminal. The substrate for mounting a semiconductor according to the above. 3. A two-layer sheet comprising a copper foil and a thermosetting insulating resin layer which is softened by heating and exhibits adhesiveness is heated and heated on the surface of the wiring board on which the semiconductor chip is mounted on which the conductive wiring is formed. 3. The method of manufacturing a semiconductor mounting substrate according to claim 1, comprising a step of pressing and bonding, and a step of forming conductor terminals by etching the copper foil of the two-layer sheet. 4. A step of aligning the conductor terminals of the semiconductor mounting substrate according to claim 1 with electrodes of the semiconductor chip so as to face each other, and heating the semiconductor chip from the back surface in parallel with the semiconductor mounting substrate. Pressing, the electrodes of the semiconductor chip are connected to the conductor terminals, the conductor terminals are vertically buried and penetrated in the thermosetting insulating resin layer, and the conductor terminals are connected to the conductor wiring of the wiring board, and at the same time, the semiconductor chip is connected to the wiring board. Bonding the semiconductor chip. 5. While heating the semiconductor chip from the back surface,
When the conductor terminal is buried vertically through the thermosetting insulating resin layer, the melt viscosity of the thermosetting insulating resin is 200.
The method for mounting a semiconductor chip according to claim 4, wherein the range is in the range of 20,000 poise.