JP2000299373A - フィールド酸化膜内に導電体膜を含む半導体素子及びその形成方法 - Google Patents
フィールド酸化膜内に導電体膜を含む半導体素子及びその形成方法Info
- Publication number
- JP2000299373A JP2000299373A JP2000091148A JP2000091148A JP2000299373A JP 2000299373 A JP2000299373 A JP 2000299373A JP 2000091148 A JP2000091148 A JP 2000091148A JP 2000091148 A JP2000091148 A JP 2000091148A JP 2000299373 A JP2000299373 A JP 2000299373A
- Authority
- JP
- Japan
- Prior art keywords
- film
- trench
- insulating film
- field
- field insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1999-10756 | 1999-03-29 | ||
KR1019990010756A KR100321737B1 (ko) | 1999-03-29 | 1999-03-29 | 내부에 도전체를 포함하는 소자분리막 및 그 형성 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2000299373A true JP2000299373A (ja) | 2000-10-24 |
Family
ID=19578037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000091148A Pending JP2000299373A (ja) | 1999-03-29 | 2000-03-29 | フィールド酸化膜内に導電体膜を含む半導体素子及びその形成方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2000299373A (ko) |
KR (1) | KR100321737B1 (ko) |
TW (1) | TW459308B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1253634A2 (en) * | 2001-04-26 | 2002-10-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
US9269765B2 (en) | 2013-10-21 | 2016-02-23 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device having gate wire disposed on roughened field insulating film |
-
1999
- 1999-03-29 KR KR1019990010756A patent/KR100321737B1/ko not_active IP Right Cessation
-
2000
- 2000-03-29 JP JP2000091148A patent/JP2000299373A/ja active Pending
- 2000-03-31 TW TW089106000A patent/TW459308B/zh active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1253634A2 (en) * | 2001-04-26 | 2002-10-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
US6632723B2 (en) | 2001-04-26 | 2003-10-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
EP1253634A3 (en) * | 2001-04-26 | 2005-08-31 | Kabushiki Kaisha Toshiba | Semiconductor device |
US9269765B2 (en) | 2013-10-21 | 2016-02-23 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device having gate wire disposed on roughened field insulating film |
Also Published As
Publication number | Publication date |
---|---|
KR20000061599A (ko) | 2000-10-25 |
TW459308B (en) | 2001-10-11 |
KR100321737B1 (ko) | 2002-01-26 |
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