JP2000299373A - フィールド酸化膜内に導電体膜を含む半導体素子及びその形成方法 - Google Patents

フィールド酸化膜内に導電体膜を含む半導体素子及びその形成方法

Info

Publication number
JP2000299373A
JP2000299373A JP2000091148A JP2000091148A JP2000299373A JP 2000299373 A JP2000299373 A JP 2000299373A JP 2000091148 A JP2000091148 A JP 2000091148A JP 2000091148 A JP2000091148 A JP 2000091148A JP 2000299373 A JP2000299373 A JP 2000299373A
Authority
JP
Japan
Prior art keywords
film
trench
insulating film
field
field insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000091148A
Other languages
English (en)
Japanese (ja)
Inventor
Zentetsu Kyo
許然▲テツ▼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of JP2000299373A publication Critical patent/JP2000299373A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2000091148A 1999-03-29 2000-03-29 フィールド酸化膜内に導電体膜を含む半導体素子及びその形成方法 Pending JP2000299373A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1999-10756 1999-03-29
KR1019990010756A KR100321737B1 (ko) 1999-03-29 1999-03-29 내부에 도전체를 포함하는 소자분리막 및 그 형성 방법

Publications (1)

Publication Number Publication Date
JP2000299373A true JP2000299373A (ja) 2000-10-24

Family

ID=19578037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000091148A Pending JP2000299373A (ja) 1999-03-29 2000-03-29 フィールド酸化膜内に導電体膜を含む半導体素子及びその形成方法

Country Status (3)

Country Link
JP (1) JP2000299373A (ko)
KR (1) KR100321737B1 (ko)
TW (1) TW459308B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1253634A2 (en) * 2001-04-26 2002-10-30 Kabushiki Kaisha Toshiba Semiconductor device
US9269765B2 (en) 2013-10-21 2016-02-23 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device having gate wire disposed on roughened field insulating film

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1253634A2 (en) * 2001-04-26 2002-10-30 Kabushiki Kaisha Toshiba Semiconductor device
US6632723B2 (en) 2001-04-26 2003-10-14 Kabushiki Kaisha Toshiba Semiconductor device
EP1253634A3 (en) * 2001-04-26 2005-08-31 Kabushiki Kaisha Toshiba Semiconductor device
US9269765B2 (en) 2013-10-21 2016-02-23 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device having gate wire disposed on roughened field insulating film

Also Published As

Publication number Publication date
KR20000061599A (ko) 2000-10-25
TW459308B (en) 2001-10-11
KR100321737B1 (ko) 2002-01-26

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