JP2000269555A - Surface mounting type light emitting diode and manufacture of the same - Google Patents

Surface mounting type light emitting diode and manufacture of the same

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Publication number
JP2000269555A
JP2000269555A JP6787099A JP6787099A JP2000269555A JP 2000269555 A JP2000269555 A JP 2000269555A JP 6787099 A JP6787099 A JP 6787099A JP 6787099 A JP6787099 A JP 6787099A JP 2000269555 A JP2000269555 A JP 2000269555A
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Prior art keywords
emitting diode
resin sealing
sealing body
light emitting
surface
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JP6787099A
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JP3349111B2 (en
Inventor
Koichi Fukazawa
Akira Koike
Yoshio Murano
晃 小池
由夫 村野
孝一 深澤
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Citizen Electronics Co Ltd
株式会社シチズン電子
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Priority to JP6787099A priority Critical patent/JP3349111B2/en
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Publication of JP3349111B2 publication Critical patent/JP3349111B2/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/505Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52Encapsulations

Abstract

PROBLEM TO BE SOLVED: To suppress aging of wavelength converting materials by preventing wavelength converting materials, such as a fluorescent substance from being affected by ultraviolet rays from the outside part, in a surface mounting type light emitting diode. SOLUTION: This diode 11 is provided with a light emitting diode element 15 loaded on the upper face of a glass epoxy substrate 12, a reflecting frame 21 arranged in the periphery, a first resin sealing body 25 packed in the reflecting frame 21 for sealing the light emitting diode 15, a second resin sealing body 27 packed at the upper face side of the glass epoxy substrate 12 including the reflecting frame 21, while leaving an upper outer peripheral part 12a of the glass epoxy substrate 12 and a third cap-shaped resin sealing body 28 adhered and fixed to the upper outer peripheral part 12a of the glass epoxy substrate 12 with which the upper face and peripheral side face of the second resin sealing body 12 are covered. Then, wavelength converting materials are mixed into the first resin sealing body 25, and ultraviolet absorbent is mixed into the third resin sealing body 28.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、マザーボード上に表面実装することのできる表面実装型発光ダイオード及びその製造方法に係り、特に発光ダイオード素子の波長を変換することで発光色を変えるタイプの表面実装型発光ダイオードに関するものである。 The present invention relates to relates to a surface mount-type light-emitting diode and a manufacturing method thereof can be surface mounted on the motherboard, in particular surface types changing the emission color by converting the wavelength of the light emitting diode element it relates mounted light emitting diode.

【0002】 [0002]

【従来の技術】従来、この種の波長変換型の発光ダイオードとしては、例えば図14に示したものが知られている(特開平7−99345号)。 Conventionally, as a light emitting diode of wavelength conversion type of this kind is known that shown for example in FIG. 14 (Japanese Patent Laid-Open No. 7-99345). これはリードフレーム型の発光ダイオード1であって、リードフレームの一方側のメタルポスト2に凹部3を設け、この凹部3内に発光ダイオード素子4を載せて固着すると共に、この発光ダイオード素子4とリードフレームの他方側のメタルステム5とをボンディングワイヤ6によって接続する一方、前記凹部3内に波長変換用の蛍光物質等が混入されている樹脂材7を充填し、さらに全体を砲弾形の透明エポキシ樹脂8によって封止した構造のものである。 This is a light emitting diode 1 of the lead frame, the recesses 3 provided on one side of the metal post 2 of the lead frame, the fixed put the light-emitting diode element 4 in the recess 3, and the light emitting diode element 4 while connected by bonding wires 6 and the other side of the metal stem 5 of the lead frame, filled with a resin material 7 a fluorescent substance or the like is mixed for wavelength conversion in the recess 3, further clear the entire shell type shape it is of the sealed structure by epoxy resin 8. このような構造からなる発光ダイオード1にあっては、発光ダイオード素子4での発光波長が凹部3内に充填された樹脂材7によって波長変換されるために、発光ダイオード素子4の元来の発光色とは異なる発光を照射させることが出来る。 In the light emitting diode 1 having such a structure, for emission wavelength of a light emitting diode element 4 is wavelength-converted by the resin material 7 filled in the recess 3, the original light emission of the light emitting diode element 4 it can be irradiated with different emission color.

【0003】 [0003]

【発明が解決しようとする課題】ところで、樹脂材7に混入されている波長変換用の蛍光物質等は、外部からの紫外線などによって老化し易いといった性質を有しているが、上述した従来の発光ダイオード1は、全体を透明エポキシ樹脂8によって封止しているだけなので、上記蛍光物質が外部からの紫外線による影響を受け易いといった問題があった。 [SUMMARY OF THE INVENTION Incidentally, a fluorescent substance or the like for wavelength conversion are mixed in a resin material 7 has a property such easily aged ultraviolet rays from the outside, of the above-mentioned conventional emitting diode 1, because only seals the entire by transparent epoxy resin 8, the fluorescent material has a problem likely to be affected by ultraviolet rays from the outside.

【0004】そこで本発明の第1の目的は、発光ダイオードの構造を表面実装型とし、且つ上記蛍光物質等の波長変換用材料が外部からの紫外線などによる影響を受けにくいものとすることで、波長変換用材料の老化を抑えることにある。 [0004] The first object of the present invention therefore, the structure of the light-emitting diodes and surface-mount, and that the wavelength conversion material such as the fluorescent substance shall hardly affected by ultraviolet rays from the outside, in suppressing the aging of wavelength converting material.

【0005】また、本発明の第2の目的は、紫外線の影響を受けにくい構造としたことが原因で発光ダイオードの輝度の低下を伴わないようにすることにある。 [0005] A second object of the present invention is to be set to less susceptible structure of the ultraviolet so as without a decrease in brightness of the light emitting diode due.

【0006】 [0006]

【課題を解決するための手段】上記課題を解決するために、本発明の請求項1に係る表面実装型発光ダイオードは、ガラエポ基板の上面に搭載された発光ダイオード素子と、ガラエポ基板の上面側に充填されて前記発光ダイオード素子を封止する樹脂封止体とを備えた表面実装型発光ダイオードにおいて、前記発光ダイオード素子の周囲に配置された反射枠と、この反射枠内に充填され前記発光ダイオード素子を封止する第1の樹脂封止体と、前記ガラエポ基板の上面外周部を残して前記反射枠を含むガラエポ基板の上面側に充填された第2の樹脂封止体と、この第2の樹脂封止体の上面及び周側面に被せられ且つ前記ガラエポ基板の上面外周部に接着固定されたキャップ状の第3の樹脂封止体とを備え、上記第1の樹脂封止体には波長変換 In order to solve the above problems SUMMARY OF THE INVENTION The surface mount type light emitting diode according to claim 1 of the present invention includes a light emitting diode element mounted on the upper surface of the glass epoxy substrate, an upper surface side of the glass epoxy substrate in a surface-mount type light emitting diode with a resin sealing body for sealing the light emitting diode element is filled in, a reflective frame disposed around the light emitting diode element, the light emitting filled in the reflective frame in a first resin sealing body for sealing the diode element, and the second resin sealed body filled in the upper surface of the glass epoxy substrate including the reflective frame, leaving an upper surface outer peripheral portion of the glass-epoxy substrate, the first and a bonding fixed cap-like on the upper surface outer peripheral portion of the cover being and the glass-epoxy substrate on the upper surface and the peripheral side surface of the second resin sealing body third resin sealing body, in the first resin sealing body wavelength conversion 材料が、また第3の樹脂封止体には紫外線吸収剤が混入されていることを特徴とする。 Material, also in the third resin sealing body, characterized in that the ultraviolet absorber is mixed.

【0007】また、本発明の請求項2に係る表面実装型発光ダイオードは、前記充填された第1の樹脂の上面が、反射枠の上端縁より低いことを特徴とする。 [0007] The surface mount type light emitting diode according to claim 2 of the present invention, the upper surface of the first resin in which the filled, characterized in higher than the top edge of the reflection frame.

【0008】また、本発明の請求項3に係る表面実装型発光ダイオードは、前記第1の樹脂に混入される波長変換用材料が、蛍光染料又は蛍光顔料からなる蛍光物質であることを特徴とする。 Further, a surface mounted light emitting diode according to claim 3 of the present invention, the wavelength converting material mixed in the first resin, and characterized in that a fluorescent substance consisting of a fluorescent dye or fluorescent pigment to.

【0009】また、本発明の請求項4に係る表面実装型発光ダイオードは、前記第2の樹脂中に波長変換された光を拡散する拡散剤が混入されていることを特徴とする。 Further, a surface mounted light emitting diode according to claim 4 of the present invention is characterized in that the diffusion agent that diffuses the second light whose wavelength is converted into the resin is mixed.

【0010】また、本発明の請求項5に係る表面実装型発光ダイオードは、前記第3の樹脂の上面に集光レンズ部が形成されていることを特徴とする。 Further, according to claim 5 in accordance with a surface mounted light emitting diode of the present invention is characterized in that said condensing lens unit to a third upper surface of the resin are formed.

【0011】また、本発明の請求項6に係る表面実装型発光ダイオードは、前記発光ダイオード素子が、窒化ガリウム系化合物半導体あるいはシリコンカーバイド系化合物半導体からなる青色発光の素子であることを特徴とする。 Further, a surface mounted light emitting diode according to claim 6 of the present invention, the light emitting diode element, characterized in that it is a device of the blue emission of a gallium nitride-based compound semiconductor or silicon carbide-based compound semiconductor .

【0012】また、本発明の請求項7に係る表面実装型発光ダイオードの製造方法は、ガラエポ集合基板の上面に電極パターンを形成し、この電極パターン上に反射枠を接着固定する工程と、それぞれの反射枠の内部に発光ダイオード素子を搭載し、この発光ダイオード素子の電極と前記電極パターンとを接続する工程と、前記それぞれの反射枠内に波長変換用材料が混入された第1の樹脂封止体を充填して発光ダイオード素子を封止する工程と、それぞれのガラエポ基板の上面外周部がマスクされる金型を用い、前記反射枠を含むガラエポ集合基板の上面側に拡散材が混入された第2の樹脂封止体を充填する工程と、紫外線吸収剤が混入された第3の樹脂封止体の集合体を別工程で形成し、この第3の樹脂封止体の集合体を前記第2の樹脂 [0012] In the method of manufacturing a surface mounted light emitting diode according to claim 7 of the present invention includes the steps of the electrode pattern is formed on the upper surface of the glass epoxy aggregate substrate, to adhere the reflective frame on the electrode patterns, respectively internal to mounting the light emitting diode element of the reflective frame, a step of connecting the electrode and the electrode pattern of the light emitting diode element, a first resin molding the wavelength converting material on the reflection frame in said each of which is incorporated using a step of sealing the light emitting diode element is filled with a sealing member, a mold upper surface outer peripheral portion is masked for each glass-epoxy substrate, a diffusion material is mixed into the upper surface of the glass epoxy collective substrate including the reflective frame a step of filling the second resin sealing body has a collection of third resin sealing body which ultraviolet absorber is mixed to form a separate step, the assembly of the third resin sealing body the second resin 止体の上からガラエポ集合基板上に被せ、前記金型のマスクによって露出しているガラエポ集合基板の上面外周部と第3の樹脂封止体の集合体とを接着する工程と、ガラエポ集合基板に想定された切断ラインに沿ってそれぞれの発光_イオードを構成する基板の大きさ毎に切断し、一つ一つの発光ダイオードに分割する工程とを備えたことを特徴とする。 Over the glass epoxy collective substrate from above the stop member, a step of bonding the assembly of the upper surface outer peripheral portion and the third resin sealing body of glass epoxy collective substrate exposed by said mold mask, glass epoxy aggregate board along the supposed cutting line is cut into the size of the substrate constituting the respective light emitting _ diode, characterized by comprising a step of dividing every single light-emitting diode.

【0013】 [0013]

【発明の実施の形態】以下、添付図面に基づいて本発明に係る表面実装型発光ダイオード及び製造方法の実施の形態を詳細に説明する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an embodiment of a surface mount-type light-emitting diode and a manufacturing method according to the present invention will be described in detail with reference to the accompanying drawings. 図1乃至図3は、本発明に係る表面実装型発光ダイオードの実施例を示したものである。 1 to 3 illustrates an embodiment of a surface mounted light emitting diode according to the present invention. ここで、図1は表面実装型発光ダイオードを示す斜視図であり、図2は上記表面実装型発光ダイオードをマザーボードに実装した時の上記図1におけるA−A線に沿った断面図、図3は同じく上記図1におけるB−B線に沿った断面図である。 Here, FIG. 1 is a perspective view showing the surface mounted light emitting diodes, cross-sectional view taken along the line A-A in FIG 1 when 2 that implements the above surface mount type light emitting diode on the mother board, Figure 3 is a cross-sectional view also taken along line B-B in FIG. 1. この実施例に係る表面実装型発光ダイオード11は、矩形状のガラエポ基板(ガラスエポキシ基板)12の上面に一対の電極(例えばカソード電極13とアノード電極14)をパターン形成し、カソード電極13の中央電極部20に発光ダイオード素子1 A surface-mount type light emitting diode 11 according to this embodiment, a pair of electrodes on the upper surface of a rectangular glass epoxy substrate (glass epoxy substrate) 12 (e.g., cathode electrode 13 and anode electrode 14) was patterned, the center of the cathode electrode 13 light emitting diode element to the electrode portion 20 1
5を搭載し、上面電極をアノード電極14にボンディングワイヤ23で接続した後、ガラエポ基板12の上面側を樹脂で封止した構造のものである。 5 mounted, after connecting a bonding wire 23 to the upper electrode to the anode electrode 14, but the upper surface side of the glass epoxy substrate 12 of the sealed structure in the resin. 前記ガラエポ基板12の裏面側に形成されたカソード電極13及びアノード電極14の各裏面電極13a,14aは、図2及び図3に示したように、マザーボード18に設けられたプリント配線19a,19bと導通している。 Each back electrode 13a of the cathode electrode 13 and anode electrode 14 formed on the rear surface side of the glass epoxy substrate 12, 14a, as shown in FIGS. 2 and 3, the printed wiring 19a provided on the motherboard 18, and 19b It is conducting.

【0014】上記カソード電極13の中央電極部20には導電性接着剤22によって発光ダイオード素子15の下面電極が固着され、この発光ダイオード素子15の周囲に円筒状の反射枠21が配置される。 [0014] the lower surface electrode of the light emitting diode element 15 by the conductive adhesive 22 to the center electrode part 20 of the cathode electrode 13 is fixed, a cylindrical reflecting frame 21 around the light emitting diode element 15 is disposed. この反射枠21 This reflection frame 21
は、前記発光ダイオード素子15と同様に中央電極部2 , The light emitting diode element 15 in the same manner as the central electrode portion 2
0に固着されている。 It is fixed to 0. また、内周面がすりばち状に傾斜しており、発光ダイオード素子15の発光を内周面に反射させて上方向へ集光する働きを持つ。 Further, a inner circumferential surface inclined in mortar form, has a function of converging upward by reflecting on the inner peripheral surface of the light-emitting diode element 15. なお、発光ダイオード素子15からの光の反射率を上げるために、内周面を鏡面仕上げにする場合もある。 In order to increase the reflectance of light from the light emitting diode element 15, there is also a case where the inner peripheral surface to a mirror finish.

【0015】前記反射枠21内に配置される発光ダイオード素子15は略立方体形状の微小チップであり、下面と上面にそれぞれ電極を有する。 The light emitting diode element 15 disposed in the reflecting frame 21 is very small chip of substantially cubic shape, having respective electrodes on the lower surface and the upper surface. 前述したように、下面電極はカソード電極13の中央電極部20に導電性接着剤22を介して導通され、一方上面電極はボンディングワイヤ23によってアノード電極14に接続されている。 As described above, the lower electrode is conducted through the conductive adhesive 22 to the center electrode part 20 of the cathode electrode 13, whereas the upper surface electrodes are connected by a bonding wire 23 to the anode electrode 14. この実施例における発光ダイオード素子15には、 The light emitting diode element 15 in this embodiment,
シリコンカーバイド系化合物半導体からなる青色発光素子であるが、窒化ガリウム系化合物半導体の青色発光素子を用いることもできる。 Is a blue light emitting element made of a silicon carbide-based compound semiconductor, it may be used a blue light emitting element of a gallium nitride-based compound semiconductor.

【0016】この実施例において、前記反射枠21内には発光ダイオード素子15の波長を変換する目的で、第1の樹脂封止体25が充填されている。 [0016] In this embodiment, the the reflective frame 21 for the purpose of converting the wavelength of the light emitting diode element 15, a first resin sealing body 25 is filled. この第1の樹脂封止体25は、エポキシ系の透明樹脂を主成分とし、その中に青色の発光ダイオード素子に励起されて長波長の可視光を発する波長変換用材料を混入させたものであり、例えば青色の発光ダイオードを白色に変換して発光させることができる。 The first resin sealing body 25 is mainly composed of an epoxy-based transparent resin, one obtained by mixing a wavelength conversion material that emits blue light-emitting diode visible light of the excited by long wavelength element therein There, for example, can blue light emitting diode to emit light by converting to white. この波長変換用材料には蛍光染料や蛍光顔料等からなる蛍光物質が用いられる。 Fluorescent substance is used consisting of fluorescent dyes and fluorescent pigments, etc. In this wavelength conversion material. 蛍光染料としては、例えばフルオレセインやローダミン等の有機蛍光体が、また蛍光顔料としては、タングステン酸カルシウム等の無機蛍光体が用いられる。 As the fluorescent dye, for example, an organic phosphor such as fluorescein and rhodamine, but also as a fluorescent pigment, inorganic phosphors such as calcium tungstate is used. なお、これら蛍光物質の混入量を変えることで変換する波長領域を調整することができる。 Incidentally, it is possible to adjust the wavelength range to be converted by changing the mixed amount of these fluorescent materials.

【0017】上記第1の樹脂封止体25の充填量は、図1乃至図3にも示したように、その上面が反射枠21の上端縁26より低い位置になるように留めることが望ましい。 The filling amount of the first resin sealing body 25, as shown in FIGS. 1 to 3, it is desirable that the upper surface fastened to become lower than the upper edge 26 of the reflector frame 21 position . そうすることで、複数の表面実装型発光ダイオード11を近接配置した時に、一方の発光ダイオードからの発光を他方の発光ダイオードの反射枠21の上端縁2 By doing so, when placed close a plurality of surface-mount type light emitting diode 11, the upper end of the reflecting frame 21 of the other light-emitting diode light emission from one of the light emitting diodes edges 2
6で遮ることができるので、両方の発光ダイオードの発光色が混ざり合うのを防げることになる。 It is possible to block 6, so that prevented from emission color of both light-emitting diodes are mixed together.

【0018】また、この実施例では上記反射枠21を含むガラエポ基板12の上面側が、第2の樹脂封止体27 Further, the upper surface of the glass epoxy substrate 12 in this embodiment including the reflective frame 21, a second resin sealing body 27
によって封止されている。 It is sealed by. この第2の樹脂封止体27 The second resin sealing body 27
は、前記第1の樹脂封止体25によって波長変換された後の発光色をそのまま透過させるものであり、エポキシ系の透明樹脂を単独で使用することもできるが、この中に酸化アルミニウムや二酸化ケイ素等の拡散剤を混入させることによって、より均一性のある発光色が得られる。 , The first and the luminescent color after being wavelength-converted by the resin sealing body 25 which is directly transmitted, it may be used an epoxy transparent resin alone, aluminum oxide or dioxide therein by is mixed diffusion agent such as silicon, the emission color is obtained that is more uniformity. なお、第2の樹脂封止体27は、ガラエポ基板12 The second resin sealing body 27, glass epoxy substrate 12
の上面全体を封止することなく、上面外周部12aを露出させた状態で形成されている。 Without sealing the entire upper surface of, and is formed in a state of exposing the upper surface outer peripheral portion 12a.

【0019】さらに、この実施例では前記第2の樹脂封止体27の上部に第3の樹脂封止体28が形成されている。 Furthermore, a third resin sealing body 28 is formed on top of the In this embodiment the second resin sealing body 27. 図4に示すように、この第3の樹脂封止体28は、 As shown in FIG. 4, the third resin sealing body 28,
前述までの工程とは別工程で作られており、前記第2の樹脂封止体27の上面27a及び周側面27bに被せる凹所30が設けられている。 The steps up to above are made in different steps, recesses 30 for covering the upper surface 27a and the peripheral side surface 27b of the second resin sealing body 27 is provided. この凹所30は、前記第2 The recess 30, the second
の樹脂封止体27の形状に対応した空間を形作っており、第3の樹脂封止体28を被せた時に、第2の樹脂封止体27の上面27a及び周側面27bにそれぞれ密着する上壁面30a及び側壁面30bとで形成されている。 And shaping of corresponding to the shape of the resin sealing body 27 space, when covered with the third resin sealing body 28, on which contact respectively on the upper surface 27a and the peripheral side surface 27b of the second resin sealing body 27 It is formed in the wall surface 30a and the side surface 30b. また、第3の樹脂封止体28の下壁面30cには全周に亘って接着剤24が塗布されており、第2の樹脂封止体27の上に被せた時にガラエポ基板12の上面外周部12aに接着固定される。 Further, the lower wall surface 30c of the third resin sealing body 28 and the adhesive 24 is applied over the entire circumference, an upper surface outer periphery of the glass epoxy substrate 12 when placed over the second resin sealing body 27 It is adhesively fixed to the part 12a.

【0020】上記第3の樹脂封止体28は、第2の樹脂封止体27と同様、エポキシ系の透明樹脂を主成分とするものであるが、その中にサリチル酸誘導体や2−ヒドロキシベンゾフェノン誘導体等の紫外線吸収剤が混入されている。 [0020] The third resin sealing body 28, similarly to the second of the resin sealing body 27, but as a main component an epoxy transparent resin, salicylic acid derivative and 2-hydroxybenzophenones therein ultraviolet absorbers such derivatives is mixed. このように、紫外線吸収剤が混入された第3 Thus, the third ultraviolet absorber is mixed
の樹脂封止体28で第2の樹脂封止体27の外側を覆うことによって外光からの紫外線が遮断され、結果的に第1の樹脂封止体25に混入されている蛍光物質への紫外線の影響が少なくなって老化が抑えられることになる。 In the resin sealing body 28 of the second ultraviolet of the external light is blocked by covering the outside of the resin sealing body 27, resulting in to the fluorescent substance which is mixed into the first resin sealing body 25 the influence of ultraviolet rays becomes less so that aging is suppressed.
この第3の樹脂封止体28は、紫外線による蛍光物質の老化防止を目的とするものであるから、紫外線を有効に遮断できるだけの厚みを有していればよい。 The third resin sealing body 28, since it is an object of anti-aging of the fluorescent substance by the ultraviolet, may have a thickness of only ultraviolet can effectively block.

【0021】この実施例において、前記第3の樹脂封止体28の上面中央部には半球状の集光レンズ部29が一体に突出形成されている。 [0021] In this embodiment, the upper central portion of the third resin sealing body 28 hemispherical condenser lens section 29 is formed integrally projects. この集光レンズ部29は、反射枠21の上方に位置しており、反射枠21の内周面で上方向に向けて反射された発光ダイオード素子15からの光を集光するための凸レンズとしての働きを持つ。 The condenser lens section 29 is positioned above the reflective frame 21, the light from the light emitting diode element 15 is reflected toward the upper direction in the inner peripheral surface of the reflecting frame 21 as a convex lens for condensing It has a function of. 即ち、発光ダイオード素子15から発した光は、そのまま上方に直進するものと、反射枠21の内周面で反射してから上方に向かうものに分かれるが、いずれの光も第1 That is, light emitted from the light emitting diode element 15, and which goes straight upwards, but divided into those directed upward after reflected by the inner circumferential surface of the reflective frame 21, neither the light first
の樹脂封止体25によって波長変換され、さらに第2の樹脂封止体27で発光色を均一にしてから集光レンズ部29で集光されるため、高輝度の白色発光が得られることになる。 The wavelength is converted by the resin sealing body 25, to be further condensed by the condenser lens 29 from a uniform emission color at a second resin sealing body 27, on the white light emission with high luminance can be obtained Become. この集光レンズ部29の曲率半径や形状、屈折率は、集光が得られる範囲では特に限定されるものではない。 Radius of curvature, shape, refractive index of the condenser lens unit 29 is not particularly limited in the range in which light collection is obtained. なお、第3の樹脂封止体28に集光レンズ部2 Incidentally, the condensing lens unit 2 to the third resin sealing body 28
9を設けない場合もある。 There is also a case of not providing the 9.

【0022】図2及び図3に示したように、上記構成からなる表面実装型発光ダイオード11は、マザーボード18の上面に直接実装することができる。 [0022] As shown in FIGS. 2 and 3, a surface mount-type light-emitting diode 11 having the above structure can be directly mounted on the upper surface of the motherboard 18. 即ち、マザーボード18の上面に形成されているプリント配線19 That is, the printed wiring is formed on the upper surface of the motherboard 18 19
a,19b上に表面実装型発光ダイオード11を上向きに載置し、ガラエポ基板12の左右両側の裏面電極13 a, upwardly by placing the surface mounted light emitting diode 11 on the 19b, the left and right sides of the back electrode of the glass epoxy substrate 12 13
a,13bを半田接合することによって高さ寸法を抑えた発光ダイオードの実装が完了する。 a, implementation of light-emitting diodes with reduced height by 13b to the solder joint is completed. このようにしてマザーボード18に実装された表面実装型発光ダイオード11からは青色発光から白色発光に変換された光が変色することなく上方向への指向性を有しながら発せられる。 Thus from the surface mounted light emitting diode 11 mounted on the motherboard 18 in the emitted while having a directivity in the upward direction without discoloration light converted from the blue light-emitting white light.

【0023】図5乃至図13は、上記構成からなる表面実装型発光ダイオード11の製造方法を示したものであり、多数の発光ダイオードを同時に製造するためにガラエポ集合基板31が用いられる。 FIG. 5 to 13, which describes the preparation of the surface-mount type light emitting diode 11 having the above structure, the glass-epoxy aggregate substrate 31 to produce a large number of light-emitting diodes simultaneously used. 図5は、ガラエポ集合基板31に、上述した個々のガラエポ基板12毎にカソード電極及びアノード電極を構成する電極パターン32 5, the electrode pattern 32 of the glass-epoxy aggregate substrate 31, a cathode electrode and an anode electrode for each individual glass epoxy substrate 12 described above
と、個々のガラエポ基板12を仕切る長孔スルーホール部33を形成するまでの工程を示したものである。 When it shows the steps required to form a long hole through holes 33 for partitioning the individual glass-epoxy substrate 12.

【0024】図6は、ガラエポ集合基板31の上面に反射枠集合体35を位置決めし、電極パターン32の所定位置に反射枠21を載置して接着固定するまでの工程を示したものである。 [0024] Figure 6, positioning the reflector frame assembly 35 on the upper surface of the glass epoxy aggregate substrate 31, there is shown a process up by placing a reflective frame 21 at a predetermined position of the electrode patterns 32 are bonded and fixed .

【0025】次の工程では、図7に示したように、上記ガラエポ集合基板31の各反射枠21内に発光ダイオード素子15を載置し、中央電極部20に発光ダイオード素子15の下面電極を導電性接着剤22で接着する。 [0025] In the next step, as shown in FIG. 7, placing the light emitting diode element 15 in each reflective frame 21 of the glass-epoxy aggregate substrate 31, the lower electrode of the light emitting diode element 15 to the center electrode part 20 bonding a conductive adhesive 22. キュア炉に入れて発光ダイオード素子15を固着したのち、発光ダイオード素子15の上面電極とガラエポ集合基板31のアノード電極14とをボンディングワイヤ2 After fixing the light emitting diode element 15 placed in a curing oven, the light emitting diode bonding wire 2 and the anode electrode 14 of the upper electrode and the glass epoxy aggregate substrate 31 of element 15
3によって接続する。 3 by the connection.

【0026】図8は、第1の樹脂封止体25の封止工程を示したものである。 [0026] Figure 8 illustrates a sealing step of the first resin sealing body 25. この封止工程では、蛍光物質が混入された第1の樹脂封止体25を各反射枠21内にそれぞれ流し込み、発光ダイオード素子15の上面電極より上部まで充填する。 In this sealing step, pouring each first resin sealing body 25 which fluorescent material is mixed in the reflective frame 21 is filled from the upper surface electrode of the light emitting diode element 15 to the top. なお、充填の際には、第1の樹脂封止体25の上面が反射枠21の上端縁26まで達しないように注意する。 At the time of filling, the upper surface of the first resin sealing body 25 is careful not to reach the upper edge 26 of the reflector frame 21. 充填後キュア炉に入れて第1の樹脂封止体25を熱硬化させる。 A first resin sealing body 25 is thermally cured by placing the curing oven after filling.

【0027】図9及び10は、第2の樹脂封止体27の封止工程を示したものである。 [0027] Figures 9 and 10 shows the sealing process of the second resin sealing body 27. この封止工程では、ガラエポ集合基板31の上面に金型36を設置し、この金型36内に第2の樹脂封止体27を流し込んでガラエポ集合基板31の上面全体を同時に封止するものである。 What this sealing step, the mold 36 is placed on the upper surface of the glass epoxy aggregate substrate 31, at the same time sealing the entire upper surface of the glass epoxy aggregate substrate 31 by pouring a second resin sealing body 27 in the mold 36 it is. 金型36は、ガラエポ集合基板31の外周を囲むと同時に、長孔スルーホール部33に沿ったY方向の金型マスク部37と、これと直交するX方向の金型マスク部38 Mold 36, and at the same time surround the outer periphery of the glass epoxy aggregate substrate 31, a Y-direction of the mold mask portion 37 along the long hole through holes 33, X-direction of the mold mask portion 38 perpendicular thereto
とを有しており、各金型マスク部37,38によってガラエポ集合基板31を格子状に仕切っている。 Has the door, and partitions in a grid of glass-epoxy collective substrate 31 by each die mask portions 37 and 38. ガラエポ集合基板31の上面に充填された第2の樹脂封止体27 Second resin sealing body 27 that is filled to the upper surface of the glass epoxy aggregate substrate 31
は、キュア炉での加熱によって熱硬化される。 It is thermally cured by heating in a curing oven.

【0028】図11及び図12は、第3の樹脂封止体2 [0028] FIGS. 11 and 12, the third resin sealing member 2
8の封止工程を示したものである。 8 shows the step of sealing. 前述の金型36を外すとガラエポ集合基板31は、隣り合う第2の樹脂封止体27間に空隙39が形成されるから、各ガラエポ基板12の上面外周部12aが露出される。 Glass-epoxy aggregate substrate 31 when removing the mold 36 described above, the gap 39 between the second resin sealing body 27 adjacent from being formed, the upper surface outer peripheral portion 12a of the glass epoxy substrate 12 is exposed. 一方、第3の樹脂封止体28は、別工程で集合体40として形成しておき、これを前記ガラエポ集合基板31の上から被せる。 On the other hand, the third resin sealing body 28 is previously formed as an aggregate 40 in a separate step, covering it from above the glass-epoxy collective substrate 31.
集合体40の各凹所30を第2の樹脂封止体27に嵌め入れ、予め集合体40の下壁面30cに塗布しておいた接着剤24を介して上面外周部12aに接着する。 Fitted each recess 30 of the assembly 40 to the second of the resin sealing body 27 is bonded to the upper surface outer peripheral portion 12a with an adhesive 24 which has been applied to the lower wall surface 30c of the pre-assembly 40. その後、これをキュア炉に入れて接着剤24を固化する。 Then, to solidify the adhesive 24 is put in a curing oven.

【0029】図13は、ガラエポ集合基板31に搭載された発光ダイオード素子15が、第1の樹脂封止体2 FIG. 13 is a light emitting diode element 15 mounted on the glass epoxy aggregate substrate 31, a first resin sealing body 2
5、第2の樹脂封止体27及び第3の樹脂封止体28の3層構造で封止された状態を示したものである。 5 shows a sealed state a three-layer structure of a second resin sealing body 27 and the third resin sealing body 28. このようなガラエポ集合基板31を、図11及び図13に示したように、予め基板上に想定されたX,Y方向の切断ライン41,42に沿って桝目状にダイシング又はスライシングし、図1に示したような1個ずつの表面実装側発光ダイオード11に分割する。 Such glass-epoxy aggregate substrate 31, as shown in FIGS. 11 and 13, by dicing or slicing advance X which is supposed on the substrate along the cutting line 41, 42 in the Y direction in squares shape, FIG. 1 dividing the surface mount side light emitting diodes 11 of one by one, as shown in. 分割された一つ一つの表面実装型発光ダイオード11は、自動マウント機(図示せず)によって真空吸着されマザーボード18上に移送される。 A surface-mount type light emitting diode 11 of each one of divided is transferred on the mother board 18 is vacuum-adsorbed by an automatic mounting machine (not shown).

【0030】なお、上記いずれの実施例もボンディングワイヤ23を用いた接続方法について説明したが、この発明はこれに限定されるものではなく、例えば半田バンプを用いたフリップチップ実装などの接続方法も含まれるものである。 [0030] Incidentally, each of the above embodiments may have been described connection method using the bonding wires 23, the present invention is not limited thereto, and connection methods such as flip chip mounting using the example solder bumps it is intended to be included.

【0031】 [0031]

【発明の効果】以上説明したように、本発明に係る表面実装型発光ダイオードによれば、第2の樹脂封止体の外表面を紫外線吸収剤が混入してある第3の樹脂封止体で被覆したので、第2の樹脂封止体より内側に位置する波長変換用材料が外部からの紫外線などによる影響を受けにくいものとなり、波長変換用材料の老化を抑えることができる。 As described in the foregoing, according to the surface mounted light emitting diode according to the present invention, the third resin sealing body that the outer surface of the second resin sealing body ultraviolet absorber are mixed in so coated, the wavelength converting material located inside the second resin sealing body is intended to hardly affected by ultraviolet rays from the outside, it is possible to suppress the aging of wavelength converting material.

【0032】また、本発明によれば、第3の樹脂封止体を別工程で形成し、これを第2の樹脂封止体の上に被せるようにしたので、第2の樹脂封止体の周側面まで第3 Further, according to the present invention, the third resin sealing body is formed in a separate process, because it was set to cover the top of the second resin sealing body, a second resin sealing body the first to the peripheral surface 3
の樹脂封止体で被覆することができ、紫外線吸収効果が一段と発揮される。 Be the coated with a resin sealing body can, ultraviolet absorbing effect is further exerted.

【0033】また、本発明によれば、紫外線吸収剤を第3の樹脂封止体のみに混入し、第2の樹脂封止体には混入させてないので、紫外線吸収剤による発光ダイオードの輝度低下を最小限に抑えることができる。 Further, according to the present invention, an ultraviolet absorber mixed only to a third of the resin sealing body, since the second resin sealed body not be mixed, brightness of the light emitting diode according to an ultraviolet absorber it is possible to suppress the decrease to a minimum.

【0034】また、本発明によれば、反射枠内に充填される第1の樹脂封止体の上面を該反射枠の上端縁より低くしたので、複数の表面実装型発光ダイオードを近接配置した時でも、一方の発光ダイオードからの発光を他方の発光ダイオードの反射枠の上端縁で遮ることができ、 Further, according to the present invention, since the upper surface of the first resin sealing body which is filled in the reflective frame and lower than the upper edge of the reflection frame, placed close a plurality of surface mount-type light-emitting diode even when, can block the light emitted from one light emitting diode at the upper edge of the reflective frame of the other light-emitting diodes,
両方の発光ダイオードの発光色が混ざり合うといったことがない。 Is not such emission color of both light-emitting diodes are mixed together.

【0035】また、本発明に係る表面実装型発光ダイオードの製造方法によれば、ガラエポ集合基板に多数の表面実装型発光ダイオードを同時に作ることができるので、大幅なコストダウンが可能で経済的効果が大である。 Further, according to the manufacturing method of a surface mounted light emitting diode according to the present invention, it is possible to make a number of surface-mount type light emitting diode at the same time the glass-epoxy aggregate substrate, enables significant cost reduction economic effect There is a large. さらに、集光レンズ部が封止樹脂封止体と一体に成形されている他、マザーボードへの自動マウントも可能であるなど、工数削減や歩留りの向上、更には信頼性の向上なども図ることができる。 Furthermore, in addition to the condensing lens unit is formed integrally with the sealing resin sealing body, etc. is also possible automatic mounting to the motherboard, man-hours increase reduction and yield, also possible to achieve such further improvement of the reliability can.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明に係る表面実装型発光ダイオードの実施例を示す斜視図である。 Is a perspective view showing an embodiment of a surface mounted light emitting diode according to the present invention; FIG.

【図2】上記表面実装型発光ダイオードをマザーボードに実装した時の上記図1におけるA−A線に沿った断面図である。 2 is a cross-sectional view taken along the line A-A in FIG. 1 when mounted to the surface-mount type light emitting diode on the motherboard.

【図3】上記表面実装型発光ダイオードをマザーボードに実装した時の上記図1におけるB−B線に沿った断面図である。 3 is a sectional view taken along line B-B in FIG. 1 when mounted to the surface-mount type light emitting diode on the motherboard.

【図4】別工程で作った第3の樹脂封止体を第2の樹脂封止体の上に被せる時の断面図である。 4 is a cross-sectional view of the covering of the third resin sealing body made in a separate process on the second resin sealing body.

【図5】上記表面実装型発光ダイオードを集合基板で製造する際の電極パターン形成工程を示す斜視図である。 5 is a perspective view showing an electrode pattern forming step of the manufacturing process of a set substrate of the surface mount type light emitting diode.

【図6】上記集合基板上に反射枠集合体を載置する工程を示す斜視図である。 6 is a perspective view showing a step of placing a reflective frame assembly on the collective substrate.

【図7】上記集合基板上に発光ダイオード素子を搭載し、ワイヤボンドする工程を示す断面図である。 [7] mounted light emitting diode element in the collective substrate, a cross-sectional view illustrating a process of wire bonding.

【図8】上記集合基板上の発光ダイオード素子を第1の樹脂封止体で封止する工程を示す断面図である。 8 is a sectional view showing a step of sealing the light emitting diode element on the collective substrate with the first resin sealing body.

【図9】上記集合基板の上部を金型を用いて第2の樹脂封止体で封止する工程を示す斜視図である。 9 is a perspective view showing a step of sealing the second resin sealing body using the mold upper portion of the assembled board.

【図10】上記図9のC−C線に沿った断面図である。 10 is a cross-sectional view taken along line C-C of FIG 9.

【図11】前記第2の樹脂封止体の上部を第3の樹脂封止体で封止する工程を示す斜視図である。 11 is a perspective view showing a step of sealing an upper portion of the second resin sealing body in the third resin sealing body.

【図12】上記図11のD−D線に沿った断面図である。 12 is a sectional view taken along line D-D of FIG 11.

【図13】第3の樹脂封止体で封止した集合基板をX, [13] The collective substrate sealed with the third resin sealing body X,
y方向の切断ラインに沿って分割する場合の断面説明図である。 It is a cross sectional view of a case of dividing along the y-direction of the cutting line.

【図14】従来における波長変換型の発光ダイオードの一例を示す断面図である。 14 is a cross-sectional view showing an example of a wavelength conversion-type light emitting diode in the prior art.

【符号の説明】 DESCRIPTION OF SYMBOLS

11 表面実装型発光ダイオード 12 ガラエポ基板 12a 上面外周部 13 カソード電極 14 アノード電極 15 発光ダイオード素子 21 反射枠 25 第1の樹脂封止体 26 反射枠の上端縁 27 第2の樹脂封止体 28 第3の樹脂封止体 29 集光レンズ部 31 ガラエポ集合基板 36 金型 40 第3の樹脂封止体の集合体 41 X方向の切断ライン 42 Y方向の切断ライン 11 surface mounted light emitting diode 12 glass epoxy substrate 12a upper surface outer peripheral portion 13 cathode electrode 14 anode electrode 15 light emitting diode element 21 reflecting frame 25 first upper edge of the resin sealing body 26 reflective frame 27 second resin sealing body 28 the 3 of the resin sealing body 29 a condenser lens unit 31 glass epoxy aggregate substrate 36 mold 40 third assembly 41 X direction of the resin sealing body of the cutting line 42 Y-direction of the cutting line

───────────────────────────────────────────────────── フロントページの続き (72)発明者 深澤 孝一 山梨県富士吉田市上暮地1丁目23番1号 株式会社シチズン電子内 Fターム(参考) 4M109 AA02 CA01 DA02 EC11 EC12 GA01 5F041 AA11 AA14 AA43 AA44 CA33 CA40 CB36 DA34 DA36 EE23 EE25 ────────────────────────────────────────────────── ─── front page of the continuation (72) inventor Koichi Fukasawa Yamanashi Prefecture Fujiyoshida Kamikurechi 1-chome No. 23 No. 1 Co., Ltd. Citizen Electronics in the F-term (reference) 4M109 AA02 CA01 DA02 EC11 EC12 GA01 5F041 AA11 AA14 AA43 AA44 CA33 CA40 CB36 DA34 DA36 EE23 EE25

Claims (7)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 ガラエポ基板の上面に搭載された発光ダイオード素子と、ガラエポ基板の上面側に充填されて前記発光ダイオード素子を封止する樹脂封止体とを備えた表面実装型発光ダイオードにおいて、 前記発光ダイオード素子の周囲に配置された反射枠と、 A light emitting diode element mounted on the upper surface of the glass epoxy substrate [1 claim ## in a surface-mount type light emitting diode with a resin sealing body for sealing the light emitting diode element is filled to the upper surface side of the glass epoxy substrate, a reflective frame disposed around the light emitting diode element,
    この反射枠内に充填され前記発光ダイオード素子を封止する第1の樹脂封止体と、前記ガラエポ基板の上面外周部を残して前記反射枠を含むガラエポ基板の上面側に充填された第2の樹脂封止体と、この第2の樹脂封止体の上面及び周側面に被せられ且つ前記ガラエポ基板の上面外周部に接着固定されたキャップ状の第3の樹脂封止体とを備え、 上記第1の樹脂封止体には波長変換用材料が、また第3 A first resin sealing body for sealing the light emitting diode element is filled in the reflective frame in a second filled in the upper surface of the glass epoxy substrate including the reflective frame, leaving an upper surface outer peripheral portion of the glass epoxy substrate comprising a resin sealing body, and the second placed over the upper surface and the peripheral side surface of the resin sealing body and the glass-epoxy third cap-like that is adhered and fixed to the outer peripheral part of the upper surface of the substrate of a resin sealing body, said wavelength converting material to the first resin sealing body, and the third
    の樹脂封止体には紫外線吸収剤が混入されていることを特徴とする表面実装型発光ダイオード。 A surface-mount type light emitting diode in the resin sealing body, characterized in that the ultraviolet absorber is mixed.
  2. 【請求項2】 前記充填された第1の樹脂封止体の上面が、反射枠の上端縁より低いことを特徴とする請求項1 2. A method according to claim top surface of the first resin sealing body that is the filling, characterized in higher than the top edge of the reflection frame 1
    記載の表面実装型発光ダイオード。 A surface-mount type light emitting diode according.
  3. 【請求項3】 前記第1の樹脂封止体に混入される波長変換用材料が、蛍光染料又は蛍光顔料からなる蛍光物質であることを特徴とする請求項1記載の表面実装型発光ダイオード。 Wherein said wavelength converting material mixed in the first resin sealing body, a fluorescent dye or claim 1 surface-mounted light-emitting diode, wherein a is a fluorescent substance consisting of a fluorescent pigment.
  4. 【請求項4】 前記第2の樹脂封止体には波長変換された光を拡散する拡散剤が混入されていることを特徴とする請求項1記載の表面実装型発光ダイオード。 Wherein said second resin sealing member to the surface-mount type light emitting diode according to claim 1, wherein the diffusion agent that diffuses the light wavelength conversion is mixed in.
  5. 【請求項5】 前記第3の樹脂封止体の上面には集光レンズ部が形成されていることを特徴とする請求項1記載の表面実装型発光ダイオード。 Wherein said third on the upper surface of the resin sealing body according to claim 1 surface-mounted light-emitting diode, wherein the formed condensing lens unit.
  6. 【請求項6】 前記発光ダイオード素子が、窒化ガリウム系化合物半導体あるいはシリコンカーバイド系化合物半導体からなる青色発光の素子であることを特徴とする請求項1記載の表面実装型発光ダイオード。 Wherein said light emitting diode element, according to claim 1 surface-mounted light-emitting diode, wherein a is an element of blue emission comprising a gallium nitride compound semiconductor or silicon carbide-based compound semiconductor.
  7. 【請求項7】 ガラエポ集合基板の上面に電極パターンを形成し、この電極パターン上に反射枠を接着固定する工程と、 それぞれの反射枠の内部に発光ダイオード素子を搭載し、この発光ダイオード素子の電極と前記電極パターンとを接続する工程と、 前記それぞれの反射枠内に波長変換用材料が混入された第1の樹脂封止体を充填して発光ダイオード素子を封止する工程と、 それぞれのガラエポ基板の上面外周部がマスクされる金型を用い、前記反射枠を含むガラエポ集合基板の上面側に拡散材が混入された第2の樹脂封止体を充填する工程と、 紫外線吸収剤が混入された第3の樹脂封止体の集合体を別工程で形成し、この第3の樹脂封止体の集合体を前記第2の樹脂封止体の上からガラエポ集合基板上に被せ、 7. forming a top surface on the electrode pattern of the glass epoxy aggregate substrate, a step of bonding and fixing the reflective frame on the electrode pattern, the interior of each of the reflection frame by mounting the light emitting diode element, of the light emitting diode element a step of connecting the the electrode electrode pattern, and the step of sealing the first resin sealed body filled emitting diode element for wavelength conversion material is mixed into the reflective frame within the respective, respectively using a mold upper surface outer peripheral portion of the glass epoxy substrate is masked, a step of filling the second resin sealing body diffusion material is mixed into the upper surface of the glass epoxy collective substrate including the reflective frame, ultraviolet absorber the assembly of the third resin sealing body which are mixed to form in a separate process, over the glass-epoxy set on a substrate assembly of the third resin sealing body from above of the second resin sealing body,
    前記金型のマスクによって露出しているガラエポ集合基板の上面外周部と第3の樹脂封止体の集合体とを接着する工程と、 ガラエポ集合基板に想定された切断ラインに沿ってそれぞれの発光ダイオードを構成する基板の大きさ毎に切断し、一つ一つの発光ダイオードに分割する工程とを備えたことを特徴とする表面実装型発光ダイオードの製造方法。 A step of bonding the assembly of the upper surface outer peripheral portion and the third resin sealing body of glass epoxy collective substrate exposed by said mold mask, each of the light emitting along a cutting line that is supposed to glass epoxy aggregate substrate diode cut into the size of the substrate constituting the method of manufacturing a surface mount-type light-emitting diode, characterized in that a step of dividing every single light-emitting diode.
JP6787099A 1999-03-15 1999-03-15 A surface-mount type light emitting diode and a manufacturing method thereof Expired - Fee Related JP3349111B2 (en)

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