JP2000269327A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

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Publication number
JP2000269327A
JP2000269327A JP11068195A JP6819599A JP2000269327A JP 2000269327 A JP2000269327 A JP 2000269327A JP 11068195 A JP11068195 A JP 11068195A JP 6819599 A JP6819599 A JP 6819599A JP 2000269327 A JP2000269327 A JP 2000269327A
Authority
JP
Japan
Prior art keywords
film
wiring
wiring layer
inter
porous film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11068195A
Other languages
Japanese (ja)
Inventor
Bii Anando Emu
Shohei Shima
Masaki Yamada
エム・ビー・アナンド
雅基 山田
昇平 嶋
Original Assignee
Toshiba Corp
株式会社東芝
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, 株式会社東芝 filed Critical Toshiba Corp
Priority to JP11068195A priority Critical patent/JP2000269327A/en
Publication of JP2000269327A publication Critical patent/JP2000269327A/en
Granted legal-status Critical Current

Links

Abstract

(57) [Problem] To prevent a carbon film which hinders a reduction in dielectric constant from remaining between wirings constituting an aerial wiring structure. A wiring layer in which a carbon film is embedded between a plurality of wirings is formed, and a porous film is formed on the wiring layer.
Is formed, and the carbon film 3 is vaporized by the oxygen plasma treatment, and the vaporized carbon film 3 is discharged to the outside via the porous film 4 ′, thereby removing the carbon film 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a wiring structure effective for reducing parasitic capacitance between wirings and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, a large-scale integrated circuit (LSI) formed by integrating a large number of transistors, resistors, and the like to achieve an electric circuit and integrating them on one chip has become an important part of computers and communication devices. It is heavily used. For this reason, the performance of the entire device is greatly related to the performance of the LSI alone. The performance of the LSI alone can be improved by increasing the degree of integration, that is, by miniaturizing the elements.

However, as a result of the progress of finer wiring and multi-layering along with finer elements, the following problems have become apparent. In other words, the problem of signal delay due to parasitic capacitance between lines (line capacitance, interlayer capacitance) rather than the resistance of the line itself has become apparent.

In order to reduce the parasitic capacitance between wirings, an insulating film having a low dielectric constant may be used. However, this type of insulating film generally has high hygroscopicity and low adhesion to a metal film.
There is a possibility that film peeling may occur in a later step.

Therefore, as a wiring structure for reducing the parasitic capacitance, a structure in which there is no interlayer insulating film between wirings (aerial wiring structure) has been proposed. FIG. 6 is a process sectional view for explaining a conventional method of manufacturing an aerial wiring structure.

First, as shown in FIG. 6A, a first wiring layer in which a space between a plurality of wirings 82 is buried with a carbon film 83 on a semiconductor substrate 81 on which elements are formed, according to a known method. To form

Next, as shown in FIG. 6B, after forming a silicon nitride film 84 as a support film for supporting the wiring 82, the carbon film 83 is oxidized by oxygen plasma treatment to form CO, CO 2, or the like. Gas.

At this time, the silicon nitride film 84 is made of CO or C.
Since the gas has a property of transmitting gas such as O 2 , the oxidized silicon nitride film 84 becomes a gas such as CO or CO 2 and is discharged to the outside. As a result, as shown in FIG.

Next, as shown in FIG. 6C, after forming an interlayer insulating film 85 on the silicon nitride film 84, a second wiring layer including a plurality of wirings 86 is formed on the interlayer insulating film 85. . Thereafter, if necessary, a further upper wiring layer is formed.

However, according to the study of the present inventors, it has been found that this kind of conventional method of manufacturing an aerial wiring structure has the following problems.

That is, in the step of FIG. 6B, the introduction of oxygen plasma and the discharge of the vaporized carbon film 83 are performed through the silicon nitride film 84, which is not very high in permeability. There is a problem that a desired low dielectric constant cannot be obtained because a part of 83 remains. There is also a problem that it takes a very long time to vaporize the carbon film 83.

Further, a silicon nitride film 84 as a support film
Has a high dielectric constant, which may hinder lowering of the dielectric constant, which is an advantage of the aerial wiring structure. As a method of solving such a problem, it is conceivable to reduce the thickness of the silicon nitride film 84. However, if the thickness of the silicon nitride film 84 is reduced, the mechanical strength of the support film decreases. The problem arises.

[0013]

As described above, in the conventional method of manufacturing an aerial wiring structure, the introduction of oxygen plasma and the discharge of the vaporized carbon film are not so high in permeability and are performed through the silicon nitride film. Therefore, there is a problem that a part of the carbon film remains between the wirings and a desired low dielectric constant cannot be obtained.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a wiring between wirings constituting an aerial wiring structure, such as a carbon film or the like which hinders a reduction in dielectric constant. An object of the present invention is to provide a semiconductor device having a structure capable of preventing a film from remaining, and a method for manufacturing the same.

[0015]

Means for Solving the Problems [Structure] To achieve the above object, a semiconductor device according to the present invention (claim 1)
The semiconductor device is characterized by comprising a wiring layer formed in a same layer on a semiconductor substrate and including a plurality of wirings having a cavity between each other, and an insulating porous film formed on the wiring layer.

In another semiconductor device according to the present invention (claim 2), a first wiring layer is formed in a same layer on a semiconductor substrate and includes a plurality of first wirings having a cavity between each other. And an insulating first porous film formed on the first wiring layer; and a second second wiring formed on the first porous film and formed of a plurality of second wirings having a cavity between the wirings. , And an insulating second porous film formed on the second wiring layer.

The more specific structures of these semiconductor devices are as follows.

(1) The first wiring layer and the second wiring layer
Adjacent upper and lower wiring layers may be used, or
-There may be another normal wiring layer between the second wiring layers.

When the first and second wiring layers are adjacent upper and lower wiring layers, an insulating film is formed on the first porous film, and the second wiring layer is formed of the insulating film and the second wiring layer. It is configured to be connected to the first wiring layer via a plug electrode buried in one porous film.

(2) Porous film or first and second films
Has a plurality of through holes. Here, it is preferable that the through-hole is formed by a plurality of holes.

(3) The plurality of wirings constituting the wiring layer may be physically separated, integrally formed, or both.

In the method of manufacturing a semiconductor device according to the present invention (claim 6), a step of forming a wiring layer in which a space between a plurality of wirings is filled with an inter-wiring film on a semiconductor substrate; Forming an insulating porous film, and removing the inter-wiring film by vaporizing the inter-wiring film and discharging the vaporized inter-wiring film to the outside via the porous film. It is characterized by having.

Further, according to another method of manufacturing a semiconductor device according to the present invention (claim 7), a first method in which a space between a plurality of first wirings is filled with a first inter-wiring film on a semiconductor substrate. Forming the first wiring layer, forming an insulating first porous film on the first wiring layer, vaporizing the first inter-wiring film, and removing the vaporized first wiring layer. Removing the first inter-wiring film by discharging the film to the outside via the first porous film; and forming a second space between the plurality of second wirings on the first porous film. Forming a second wiring layer embedded with the second wiring film, forming an insulating second porous film on the second wiring layer, and forming the second wiring film on the second wiring layer. Is vaporized, and the vaporized second inter-wiring film is discharged to the outside through the second porous film, whereby Characterized by a step of removing the second inter-wiring layer.

According to another aspect of the invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: embedding a first inter-wiring film between a plurality of first wirings on a semiconductor substrate; Forming a first wiring layer, forming an insulating first porous film on the first wiring layer, and forming a second space between the plurality of second wirings on the first porous film. Forming a second wiring layer embedded with the second inter-wiring film;
Forming an insulating second porous film on the first wiring layer, and vaporizing the second inter-wiring film, and externalizing the vaporized second inter-wiring film via the second porous film. And the first inter-wiring film is vaporized, and the vaporized first inter-wiring film is discharged to the outside through the first and second porous films, whereby the first and second inter-wiring films are discharged. 2) removing the inter-wiring film.

A more specific structure of the method for manufacturing these semiconductor devices is as follows.

(1) The porous film is formed by anodizing a film to be the porous film.

(2) The inter-wiring film is a carbon film, and the carbon film is removed by being vaporized by oxygen plasma treatment.

(3) When the first and second inter-wiring films are removed in different steps, an insulating film is formed on the first porous film, and the insulating film and the first porous film are removed. The first wiring layer and the second wiring layer are connected by burying a plug electrode in the first wiring layer.

(4) When removing the first and second inter-wiring films in the same step, a third inter-wiring film is formed on the first porous film, and the third inter-wiring film and the third inter-wiring film are removed. By embedding a plug electrode in the first porous film, the first wiring layer is connected to the second wiring layer, and the first wiring layer is connected to the first wiring layer.
In the step of removing the second inter-wiring film, the third inter-wiring film is also removed.

[Operation] The semiconductor device according to the present invention (claims 1 to 5) has a structure in which a porous film is provided on a wiring layer. According to the method of manufacturing a semiconductor device according to 6 to 11), it is possible to prevent the inter-wiring film remaining which hinders a decrease in the dielectric constant.

That is, according to the present invention, since the porous film, which is a film having higher permeability than the conventionally used silicon nitride film, is used, the oxygen plasma for vaporizing the inter-wiring film from the outside is used. And the like can be effectively introduced, and the vaporized inter-wiring film can be effectively exhausted to the outside, so that it is possible to prevent the inter-wiring film from remaining which hinders a decrease in the dielectric constant. In addition, since the gas can easily flow in and out, the time for removing the inter-wiring film can be shortened.

Further, since a porous film has a large number of holes (pores), the substantial dielectric constant of the entire film is smaller than that of a silicon nitride film. As a result, the dielectric constant can be made smaller than that of a conventional hollow wiring structure using a silicon nitride film.

Further, in the present invention, a porous film is used as a supporting film for supporting the wiring, and if a material having high mechanical strength such as alumina is used as the porous film, silicon nitride which is a conventional supporting film is used. As compared with the film, the wiring can be sufficiently supported, and the disadvantage such as the bending of the wiring layer does not occur.

In the case where there is a large space between the wirings, by providing a dummy pattern between the wide wirings, the bending of the wiring layer can be effectively prevented.

[0035]

Embodiments of the present invention (hereinafter, referred to as embodiments) will be described below with reference to the drawings.

(First Embodiment) FIGS. 1 and 2 are process sectional views showing a method for manufacturing a multilayer wiring layer having an aerial wiring structure according to a first embodiment of the present invention.

First, as shown in FIG. 1A, a first wiring layer in which a space between a plurality of wirings 2 is filled with a carbon film 3 (inter-wiring film) on a semiconductor substrate 1 on which elements are formed. Then, an Al film 4 serving as a support film (porous alumina film) for supporting the wiring 2 is formed.

Here, either of the wiring 2 and the carbon film 3 may be formed first. When the wiring 2 is formed first, a carbon film 3 is deposited on the entire surface so as to fill the space between the wirings 2 and then the surface is flattened by CMP or the like.
On the other hand, when the carbon film 3 is formed first, the wiring 2 is buried and formed by a damascene process.

The wiring 2 may be a metal wiring such as an Al wiring or a Cu wiring, or a wiring using a low-resistance polycrystalline silicon film containing impurities such as phosphorus. Further, the plurality of wirings 2 constituting the wiring layer may be physically separated, integrally formed, or both.

Next, as shown in FIG. 1 (b), the Al film 4 is anodized to form a porous film 4 '.

Here, there are two types of Al anodic oxide films, one is called a barrier film, and the other is called a porous film. A barrier film is formed when anodized using a weak acid solution such as an ammonium borate solution, while a porous film is formed when anodized using a relatively strong oxidizing solution such as an oxalic acid solution. Is formed. As the name implies, the porous film has many pores (pores) formed in the film, while the barrier film has no pores.

Since the pore (air) portion of the porous film has a dielectric constant of 1 in principle, it greatly contributes to lowering the dielectric constant between wirings. 25% temperature in 6% oxalic acid solution
When the anodic oxidation of the Al film 4 is performed under the conditions of a temperature of 2 ° C. and a constant current of 2 mA / cm 2 , the porous film 4 ′ grows at a growth rate of 50 nm / min. In this case, the pore diameter of the pores of the porous film 4 'is 20 to 40 nm. In the porous film 4 ', through holes are formed in the film thickness direction by pores as shown in FIG.

The through-hole does not need to be formed in a form as shown in FIG. 4B, but may be formed in a form in which pores are connected from the front surface to the back surface of the porous film 4 '. The point is that pores may be generated so that the gas for vaporizing the carbon film 3 and the vaporized carbon film 3 can be introduced and discharged, respectively. Therefore, if a portion between the pores of the porous film 4 'is thin and gas can enter and exit, there may be no need to provide a through-hole.

In the case of this embodiment, the base of the Al film 4 is composed of the wiring 2 and the carbon film 3, all of which are conductive films. Since these serve as a current supply path for promoting anodic oxidation, an anodic oxidation current is supplied from the entire lower portion of the Al film 4. Therefore, a portion of the Al film 4 does not remain in an island shape, and the entire Al film 4 can be formed as a porous film 4 '. In addition, the stage where the current for anodic oxidation becomes constant (just condition) When the anodic oxidation is stopped in step (1), a porous film 4 'in which a barrier film corresponding to the voltage at the time of the anodic oxidation is present at the bottom of the pore is formed, so that gas cannot enter and exit. The relationship between the thickness of the barrier film and the voltage is 1.4 nm /
V. Therefore, the anodization time does not end in just conditions, and after stopping the current supply, it is left in the oxalic acid solution to dissolve the barrier film existing at the bottom of the pore,
A path through which gas can flow in and out of the porous film 4 'is formed.

Next, as shown in FIG. 1 (c), the carbon film 3 is oxidized by oxygen plasma treatment to remove CO and CO 2.
And so on. These gases are discharged outside through the pores of the porous film 4 '. As a result, FIG.
As shown in (1), the space between the wirings 2 is hollowed to complete the first layer aerial wiring structure.

At this time, the porous film 4 ′ has much higher permeability than the silicon nitride film due to the presence of the pores, and the carbon film 3 does not remain between the wirings 2. In addition, since the carbon film 3 evaporates quickly, the carbon film 3 can be removed in a short time.

Next, as shown in FIG. 2D, after forming an interlayer insulating film 5 having a low dielectric constant on the porous film 4 ', a via hole is opened in the interlayer insulating film 5 and the porous film 4'. A plug electrode 6 is buried therein.

Next, as shown in FIG.
Similarly to the step, after forming a second wiring layer in which a space between the plurality of wirings 7 is filled with a carbon film 8 (inter-wiring film), an Al film 9 serving as a supporting film for supporting the wirings 7 is formed. Form. The type and the like of the wiring 7 are the same as those of the wiring 2.

Next, as shown in FIG. 2F, FIG.
1C, the Al film 9 is anodized to form a porous film 9 ', and then the carbon film 8 is vaporized and removed by oxygen plasma treatment. In this way, the second-layer aerial wiring structure is completed. Thereafter, by forming a passivation film 10 on the porous film 9 ', a multilayer wiring layer having a two-layer air wiring structure is completed.

(Second Embodiment) FIGS. 3 and 4 are process sectional views showing a method for manufacturing a multilayer wiring layer having an aerial wiring structure according to a second embodiment of the present invention. 1 are given the same reference numerals as in FIG. 1, and detailed description is omitted.

This embodiment differs from the first embodiment in that no interlayer insulating film exists between the upper and lower wiring layers.

First, as shown in FIG. 3A, a wiring 2, a carbon film 3, and an Al film 4 are formed on a semiconductor substrate 1, and then, as shown in FIG. Oxidation forms the porous film 4 '. Up to this point, the operation is the same as in the first embodiment.

Next, as shown in FIG. 3C, after depositing a carbon film 11 on the porous film 4 ',
A via hole is opened in the porous film 4 ', and a plug electrode 6 is buried therein. Thereafter, an Al film 12 serving as a support film is deposited on the entire surface.

Next, as shown in FIG. 3D, as in the case of the porous film 4 ', the Al film 12 is anodized to form a porous film 12'.

Next, as shown in FIG. 4E, after forming a second wiring layer in which a space between the plurality of wirings 7 is filled with a carbon film 8, a porous film 9 'is formed.

Next, as shown in FIG. 4F, the carbon films 3, 8, and 10 are vaporized and removed by the oxygen plasma treatment. Here, the carbon films 3, 8, and 11 are vaporized from the uppermost carbon film 8. In addition, carbon film 3,
Since only the porous films 4 ′ and 12 ′ exist between 8, there is nothing that inhibits the vaporization of the carbon films 3 and 11.

As described above, according to the present embodiment, since the carbon films 3, 8, and 11 can be removed in the same step, the carbon films 3, 8 and 11 can be removed in different steps, respectively, as compared with the first embodiment. The number of steps can be reduced.

Further, according to the present embodiment, since there is no interlayer insulating film between the wirings in the same wiring layer and between the wirings in the upper and lower wiring layers, the parasitic capacitance between the wirings in the same wiring layer ( It is possible to realize a multilayer wiring layer having extremely low parasitic capacitance (interlayer capacitance) between wirings of different upper and lower wiring layers and an upper and lower wiring layer.

Thereafter, as shown in FIG. 4G, a passivation film 10 is formed on the porous film 9 'to complete a multilayer wiring layer.

The present invention is not limited to the above embodiment. For example, in the first and second embodiments, the case of two multilayer wiring layers has been described, but three or more multilayer wiring layers can be manufactured by the same method.

In the first embodiment, by forming the porous film 4 'thick, a multilayer wiring layer having an aerial wiring structure without the interlayer insulating film 5 can be realized as shown in FIG. . In this case, since the porous film 4 'is formed thick, its mechanical strength becomes sufficiently large. Further, since the step of forming the interlayer insulating film 5 becomes unnecessary, the number of steps can be reduced. The same applies to the case of three or more multilayer wiring layers.

In the first and second embodiments, A
Although the porous film as the support film is formed by anodizing the 1 film, a porous film may be formed by anodizing another film such as a Si film.

If there is a large space between the wirings 2, there is a possibility that the porous layer 4 ′ hangs down, resulting in a problem that the wiring 7 formed thereon is bent. This problem can be easily solved by forming a dummy pattern between the wide wirings 2. Further, since the dummy pattern and the wiring 2 can be formed by patterning the same film, the problem of increasing the number of steps does not occur even if the dummy pattern is introduced.

In the first and second embodiments, a case has been described in which all the wiring layers are multi-layer wiring layers having an air wiring structure. However, an air wiring structure is adopted only for a wiring layer requiring a small parasitic capacitance. However, a normal wiring structure may be adopted for the remaining layers.

In this case, the wiring layer of the aerial wiring structure is a multilayer wiring layer having only one layer, the wiring layer of the normal wiring structure is a multilayer wiring layer having only one layer, and the wiring layer of the aerial wiring structure has a normal wiring layer. Various multilayer wiring layers such as a multilayer wiring layer having a wiring layer having a wiring structure and a multilayer wiring layer having the opposite wiring layer are possible.

In the first and second embodiments, the type of the semiconductor substrate 1 is not particularly limited. However, the semiconductor substrate 1 may be an ordinary silicon substrate or an SOI substrate.
A substrate may be used. Further, a semiconductor substrate made of a material other than silicon (for example, silicon germanium) may be used.

In addition, various modifications can be made without departing from the spirit of the present invention.

[0068]

As described in detail above, according to the present invention, a gas for vaporizing an inter-wiring film is effectively introduced from the outside by providing a porous film which is a highly permeable film on a wiring layer. And a method of manufacturing a semiconductor device having a hollow wiring structure capable of preventing a residual wiring film from hindering a decrease in dielectric constant, since a vaporized wiring film can be effectively discharged to the outside. It can be realized.

[Brief description of the drawings]

FIG. 1 is a process cross-sectional view showing a first half of a method for manufacturing a multilayer wiring layer of an aerial wiring structure according to a first embodiment of the present invention;

FIG. 2 is a process cross-sectional view showing the latter half of the method for manufacturing the multilayer wiring layer of the aerial wiring structure according to the first embodiment of the present invention;

FIG. 3 is a process cross-sectional view showing a first half of a method for manufacturing a multilayer wiring layer of an aerial wiring structure according to a second embodiment of the present invention;

FIG. 4 is a process cross-sectional view showing the latter half of the method for manufacturing the multilayer wiring layer of the aerial wiring structure according to the second embodiment of the present invention;

FIG. 5 is a sectional view showing a modification of the multilayer wiring layer of the aerial wiring structure according to the first embodiment;

FIG. 6 is a process sectional view showing a conventional method of manufacturing an aerial wiring structure;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate 2 ... Wiring (1st wiring) 3 ... Carbon film (1st inter-wiring film) 4 ... Al film 4 '... Porous film 5 ... Interlayer insulating film 6 ... Plug electrode 7 ... Wiring (2nd wiring) 8) Carbon film (second inter-layer film) 9 ... Al film 9 '... Porous film (third inter-layer film) 10 ... Passivation film 11 ... Carbon film 12 ... Al film 12' ... Porous film

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Masaki Yamada 8th Shinsugitacho, Isogo-ku, Yokohama-shi, Kanagawa Prefecture F-term in the Toshiba Yokohama Office 5F004 DA26 DB00 5F033 KK04 KK08 KK11 RR03 RR30 SS24 SS26 TT01 XX24 5F058 BA20 BD02 BD05 BD18 BF70 BH16 BJ02

Claims (12)

[Claims]
1. A semiconductor device comprising: a wiring layer formed in a same layer on a semiconductor substrate, the wiring layer including a plurality of wirings having a space between wirings, and an insulating porous film formed on the wiring layer. A semiconductor device characterized by the above-mentioned.
2. A first wiring layer formed in a same layer on a semiconductor substrate and formed of a plurality of first wirings having a space between wirings, and an insulating layer formed on the first wiring layer. A first porous film formed on the first porous film, a second wiring layer formed of a plurality of second wirings formed between the wirings and having a cavity therebetween, and formed on the second wiring layer. A semiconductor device comprising: an insulating second porous film.
3. The semiconductor device according to claim 2, wherein the second wiring layer is connected to the first wiring layer via a plug electrode.
3. The semiconductor device according to claim 1.
4. The semiconductor device according to claim 1, wherein the porous film or the first and second porous films have a plurality of through holes.
5. The semiconductor device according to claim 4, wherein said through hole is formed by a plurality of holes.
6. A step of forming a wiring layer in which a space between a plurality of wirings is buried with an inter-wiring film on a semiconductor substrate; a step of forming an insulating porous film on the wiring layer; Removing the inter-wiring film by evaporating the inter-film and discharging the vaporized inter-wiring film to the outside via the porous film.
7. A step of forming a first wiring layer in which a space between a plurality of first wirings is buried with a first inter-wiring film on a semiconductor substrate, and insulating the first wiring layer on the first wiring layer. Forming a conductive first porous film; and vaporizing the first inter-wiring film and discharging the vaporized first inter-wiring film to the outside via the first porous film. Removing the first inter-wiring film; and forming a second wiring layer on the first porous film in which a space between the plurality of second wirings is filled with a second inter-wiring film. Forming an insulating second porous film on the second wiring layer; vaporizing the second inter-wiring film; and forming the vaporized second inter-wiring film into the second Removing the second inter-wiring film by discharging to outside through a porous film. The method of manufacturing a semiconductor device.
8. A step of forming, on a semiconductor substrate, a first wiring layer in which a space between a plurality of first wirings is buried with a first inter-wiring film, and forming an insulating layer on the first wiring layer. Forming a first porous film having a characteristic, and forming a second wiring layer on the first porous film, in which a space between a plurality of second wirings is filled with a second inter-wiring film. Forming an insulating second porous film on the second wiring layer; vaporizing the second inter-wiring film; and forming the vaporized second inter-wiring film into the second By discharging the first inter-wiring film to the outside through the porous film and discharging the vaporized first inter-wiring film to the outside through the first and second porous films, Removing the first and second inter-wiring films. .
9. The method for manufacturing a semiconductor device according to claim 6, wherein said porous film is formed by anodizing a film to be said porous film.
10. The method according to claim 6, wherein said inter-wiring film is a carbon film, and said carbon film is vaporized by oxygen plasma processing.
11. An insulating film is formed on the first porous film, and a plug electrode is buried in the insulating film and the first porous film to form the first wiring layer and the second porous film. 8. The method for manufacturing a semiconductor device according to claim 7, wherein said wiring layer is connected to said wiring layer.
12. A third inter-wiring film is formed on the first porous film, and a plug electrode is buried in the third inter-wiring film and the first porous film. Connecting the first wiring layer and the second wiring layer,
9. The method according to claim 8, wherein the step of removing the first and second interwiring films also removes the third interwiring film.
13. The method for manufacturing a semiconductor device according to item 5.
JP11068195A 1999-03-15 1999-03-15 Semiconductor device and manufacture thereof Granted JP2000269327A (en)

Priority Applications (1)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004172620A (en) * 2002-11-15 2004-06-17 United Microelectronics Corp Integrated circuit with air gaps and its manufacturing method
JP2007019508A (en) * 2005-07-08 2007-01-25 Koninkl Philips Electronics Nv Control of lateral direction distribution of a plurality of air gaps in interconnection wiring
JP4787412B2 (en) * 1999-03-30 2011-10-05 シチズンホールディングス株式会社 Method for forming thin film substrate and thin film substrate formed by the method
JP2014209522A (en) * 2013-04-16 2014-11-06 富士通株式会社 Semiconductor device and manufacturing method of the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4787412B2 (en) * 1999-03-30 2011-10-05 シチズンホールディングス株式会社 Method for forming thin film substrate and thin film substrate formed by the method
JP2004172620A (en) * 2002-11-15 2004-06-17 United Microelectronics Corp Integrated circuit with air gaps and its manufacturing method
JP2007019508A (en) * 2005-07-08 2007-01-25 Koninkl Philips Electronics Nv Control of lateral direction distribution of a plurality of air gaps in interconnection wiring
JP2014209522A (en) * 2013-04-16 2014-11-06 富士通株式会社 Semiconductor device and manufacturing method of the same
US9647084B2 (en) 2013-04-16 2017-05-09 Fujitsu Limited Semiconductor device and method of manufacturing the same

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