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JP2000260715A - Apparatus for manufacturing thin-film semiconductor - Google Patents

Apparatus for manufacturing thin-film semiconductor

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JP2000260715A
JP2000260715A JP6027499A JP6027499A JP2000260715A JP 2000260715 A JP2000260715 A JP 2000260715A JP 6027499 A JP6027499 A JP 6027499A JP 6027499 A JP6027499 A JP 6027499A JP 2000260715 A JP2000260715 A JP 2000260715A
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electrodes
film
substrate
high
apparatus
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JP3560134B2 (en )
Inventor
Akihiro Takano
Takashi Yoshida
吉田  隆
章弘 高野
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Fuji Electric Co Ltd
富士電機株式会社
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing thin-film semiconductors, capable of achieving high quality, high efficiency and high maintainability by solving problems such as loosenesses and lengthwise wrinkles of film substrates. SOLUTION: An apparatus for manufacturing thin-film semiconductors comprises a plurality of high-frequency applying electrodes 4 arranged vertically within a reaction chamber, facingly arranged ground electrodes 33, a heater 31, a transfer means 6 and 8 constructed of various types of rolls for transferring a film substrate 10, while applying a predetermined tension to the substrate 10. In this apparatus, the means 6 and 8 are arranged such that the substrate 10 advances adjacent to the electrodes 33, and the grounding electrodes 33 have a position-adjusting means 32 for finely adjusting the distance between the substrate 10 and the electrodes 33, so that the substrate 10 is brought into surface contact with the electrodes 33.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】この発明は、帯状可撓性のフィルム基板の面上に複数の異なる性質の薄膜を積層して薄膜光電変換素子などの薄膜半導体を形成するための製造装置に関する。 TECHNICAL FIELD The present invention relates to a manufacturing apparatus for a thin film of a plurality of different properties on the surface of the film substrate of strip-shape flexible laminated to form a thin film semiconductor such as a thin film photoelectric conversion element.

【0002】 [0002]

【従来の技術】現在、環境保護の立場から、クリーンなエネルギーの研究開発が進められている。 At present, from the standpoint of environmental protection, research and development of clean energy has been promoted. 中でも、太陽電池はその資源(太陽光)が無限であること、無公害であることから注目を集めている。 Among them, solar cells that the resources (sunlight) is infinite, has attracted attention because it is pollution-free.

【0003】薄膜太陽電池は、薄型で軽量、製造コストの安さ、大面積化が容易であることなどから、今後の太陽電池の主流となると考えられる。 [0003] The thin-film solar cells, light-weight and thin, cheap manufacturing costs, etc. It is easy to a large area, is considered to be the mainstream of future solar cells.

【0004】従来の薄膜太陽電池はガラス基板を用いていたが、軽量化、施工性、量産性においてプラスチックフィルムおよび金属フィルムを用いたフレキシブルタイプの太陽電池の研究開発がすすめられている。 [0004] While the conventional thin film solar cells have used glass substrates, weight, workability, research and development of flexible type solar cell using plastic films and metal films are recommended in mass productivity. このフレキシブル性を生かし、ロールツーロール方式やステッピングロール方式の製造方法により大量生産が可能となった。 Taking advantage of this flexibility has made it possible to mass-produced by the production method of a roll-to-roll or stepping roll method.

【0005】両方式共に、複数のロールによる基板搬送手段を備え、前者は各成膜室内を連続的に移動する基板上に連続的に成膜する方式であり、後者は各成膜室内で同時に停止させた基板上に成膜し,成膜の終わった基板部分を次の成膜室へ送り出す方式を採用している。 [0005] Both expression together with the substrate transport means using a plurality of rolls, the former is a method for continuously deposited on a moving substrate a respective film forming chamber continuously, the latter simultaneously in each film forming chamber then deposited onto the substrate is stopped, the finished substrate portion of deposition employs a method for feeding to the next deposition chamber.

【0006】ステッピングロール方式の成膜装置は、隣接する成膜室間のガス相互拡散を防止できることから各薄膜の特性が安定して得られるなどの点で優れており、 [0006] film-forming apparatus of a stepping roll method, the characteristics of the thin film because it can prevent gas interdiffusion between adjacent film deposition chambers is excellent in terms of stably obtained,
その装置の構成は、例えば、特開平6-292349号公報に記載されている。 Configuration of the apparatus, for example, described in JP-A-6-292349.

【0007】一方、ロールツーロール方式は、鉛直方向に段違いに設けたロール間に基板を連続的に移動させ、 On the other hand, a roll-to-roll method, continuously moving the substrate between rolls different levels provided in the vertical direction,
複数の成膜作業を連続的に行うので、量産性に優れており、その装置の構成は、例えば、特公平7-38378号公報に記載されている。 Since the plurality of deposition work continuously, is excellent in mass productivity, the configuration of the apparatus, for example, described in Japanese Patent Kokoku 7-38378.

【0008】 [0008]

【発明が解決しようとする課題】ところで、前述のような従来の製造装置においては、下記のような問題があった。 [SUMMARY OF THE INVENTION Incidentally, in the conventional manufacturing apparatus, such as described above has a problem as follows. 特開平6-292349号公報に記載されたようなステッピングロール方式の成膜装置においては、各成膜室内で同時に停止させた基板上に成膜する際に反応室を閉じシールすることになるが、このとき搬送用のロールで基板に作用させている張力が、反応室のシール部で基板が支持されるためにカットされ、成膜中の熱膨張により基板が伸びた場合に、所定の張力が維持できず、基板にたるみを生ずる問題があった。 A film forming apparatus stepping roll type as described in Japanese Patent Laid-Open No. 6-292349 is so that the seal closing the reaction chamber when forming on a substrate at the same time stopped at the film forming chamber , tension is caused to act on the substrate by a roll for conveying this time, is cut to the substrate is supported by the sealing portion of the reaction chamber, when the substrate is stretched by thermal expansion during the film formation, a predetermined tension there can not be maintained, there is a problem caused the slack in the substrate.

【0009】また、前記特公平7-38378号公報に記載されたようなロールツーロール方式においては、鉛直方向に段違いに設けたロール間に基板を連続的に移動させ、 Further, in the roll-to-roll system as described in the KOKOKU 7-38378 discloses the continuously moving the substrate between rolls different levels provided in the vertical direction,
張力が基板に連続的に働くように構成されているので、 The tension is configured to work continuously on the substrate,
基板がたるむ問題はないが、薄膜太陽電池のように薄くかつ帯状のフィルム基板の場合には、ロール間で基板に縦皺が形成され、品質不良が発生する問題があった。 Although the substrate is not a problem that sags in the case of thin and band-shaped film substrate as the thin film solar cell is vertical wrinkles on the substrate formed between the rolls, the quality defect is a problem that occurs.

【0010】この発明は、上記のような問題点を解消するためになされたもので、本発明の課題は、フィルム基板のたるみや縦皺が発生する問題を解消し、高品質にして高効率の薄膜光電変換素子などの薄膜半導体を形成するための製造装置を提供すること、さらに、製造装置のメンテナンス性を向上することにある。 [0010] The present invention has been made to solve the above problems, an object of the present invention is to solve the problem of the film substrate sagging and vertical wrinkles occur, high efficiency in the high-quality providing a manufacturing apparatus for forming a thin film semiconductor such as a thin film photoelectric conversion element, further, is to improve the maintainability of the manufacturing apparatus.

【0011】 [0011]

【課題を解決するための手段】前述の問題を解決するため、請求項1の発明は、帯状可撓性のフィルム基板の面上に複数の異なる性質の薄膜を積層して薄膜半導体を形成するための少なくとも一つの反応室と、前記反応室へ薄膜に応じた反応ガスを供給するガス供給系と、前記反応室の圧力を制御しながらガスを排気する排気系と、前記反応室内にほぼ鉛直に配置された複数の高周波印加電極と、この高周波印加電極と対向する位置に配置された複数の接地電極と、前記フィルム基板加熱用のヒータと、前記接地電極と高周波印加電極との間を前記両電極の主面と略平行にフィルム基板を進行させ,かつフィルム基板に所定の張力をかけるための搬送手段と、前記フィルム基板巻出し用アンワインダー室と、フィルム基板巻取り用ワインダー [Means for Solving the Problems] To solve the above problems, the invention of claim 1, to form a thin film semiconductor by laminating thin films of different properties on the surface of the film substrate of the band-shaped flexible At least one of the reaction chamber, a gas supply system for supplying a reaction gas in accordance with the thin film into the reaction chamber, an exhaust system for exhausting gas while controlling the pressure of said reaction chamber, substantially vertical to said reaction chamber for a plurality of high-frequency applying electrode disposed in, and the high frequency application electrode opposite to the plurality of ground electrodes disposed at the position, and the heater of the film substrate heating, between the ground electrode and the high-frequency applying electrode wherein the main surface substantially parallel to the film substrate between both electrodes allowed to proceed, and a conveying means for applying a predetermined tension to the film substrate, and the film substrate unwinding for unwinder chamber, the film substrate take-up winder とを備えた薄膜半導体の製造装置において、前記搬送手段は、前記フィルム基板が接地電極に隣接して進行するような位置関係を維持するものとなし、かつ前記接地電極は、前記フィルム基板をこの接地電極に面接触させるように,フィルム基板と接地電極との距離を微調整するための位置調整手段を備えたものとする。 Apparatus for manufacturing a thin film semiconductor having a preparative, said conveying means, without intended to the film substrate to maintain the position relation as to proceed adjacent to the ground electrode, and the ground electrode, the said film substrate as to surface contact with the ground electrode, and that includes a position adjusting means for finely adjusting the distance between the film substrate and the ground electrode. 上記構成により、フィルム基板は適正な張力を受けつつも接地電極のガイド効果により、縦皺の発生が防止できる。 With the above structure, the film substrate by a guide effect of the ground electrode while receiving the proper tension, occurrence of vertical wrinkles can be prevented. なお、張力は、出来る限り小さい方が縦皺の発生が起きにくい。 It should be noted that the tension is, the smaller is less likely to occur is the generation of vertical wrinkles as possible.

【0012】請求項2の発明では、同様の問題を別の方式で解決するもので、搬送手段は、フィルム基板が接地電極に隣接して進行するような位置関係を維持するものとなし、かつ前記接地電極は、前記フィルム基板との隣接面からフィルム基板に対して反応ガスないしは反応ガスの一部のガスを供給し、接地電極とフィルム基板との間にフィルム基板平坦度保持用のガス膜を形成するためのガス膜形成手段を備えたものとする。 [0012] In the present invention of claim 2, intended to solve similar problems in a different manner, the conveying means, without intended to film substrate to maintain a positional relationship as to proceed adjacent to the ground electrode, and the ground electrode, the film supplies a portion of the gas in the reaction gas or reaction gas from the adjacent surface to the film substrate between the substrate, the gas film for the film substrate flatness retained between the ground electrode and the film substrate and those with gas film forming means for forming a. この場合には、 In this case,
フィルム基板は適正な張力を受けつつも、縦皺の発生をガス圧力により防止することができる。 Also the film substrate while receiving the proper tension, occurrence of vertical wrinkles can be prevented by the gas pressure. ガスは、フィルム基板が若干湾曲するように供給する方が、縦皺発生防止上は望ましい。 Gas is better to supply so that the film substrate is curved slightly, the striation prevention desirable.

【0013】請求項3の発明は、請求項1と2を組み合わせた発明に相当し、前記接地電極は、ガス膜形成手段に加え、さらに、フィルム基板と接地電極との距離を微調整するための位置調整手段を備えるものとする。 [0013] The invention of claim 3, corresponds to the invention in combination with claim 1 and 2, the ground electrode, in addition to the gas film forming means, further, in order to finely adjust the distance between the film substrate and the ground electrode It shall comprise position adjustment means. また、請求項4の発明では、前記接地電極とフィルム基板とが接触した際には,水平方向に微小たわみをもち曲率半径長大の湾曲面をフィルム基板が形成可能なように、 Further, in the invention of claim 4, when said ground electrode and the film substrate are in contact, as the film substrate a curved surface of the horizontal small deflection has curvature radius long the capable formation,
接地電極のフィルム基板対向面は、湾曲面とする、または湾曲面形成手段を備えるものとする。 Film substrate opposing surface of the ground electrode is a curved surface, or intended to comprise a curved surface forming means. この構成により、縦皺発生防止効果はさらに向上する。 This configuration striation prevention effect is further improved.

【0014】さらに、請求項5の発明は、反応室が単室の場合の成膜の品質向上を図るもので、請求項1ないし4のいずれかに記載のものにおいて、前記反応室は単室であり、この反応室とフィルム基板巻出し用アンワインダー室およびフィルム基板巻取り用ワインダー室とをそれぞれ接続してフィルム基板を送通するための連通口を有し、前記少なくともいずれかの室内の前記連通口の近傍には、フィルム基板巻取り位置調整用のエッジポジションコントローラを備えるものとする。 Furthermore, the invention of claim 5, in which the reaction chamber is improving the quality of film formation in the case of a single chamber, in as described in any one of claims 1 to 4, wherein the reaction chamber is a single chamber , and the have a communication port for Okudori a film substrate and a reaction chamber and the film substrate unwinding for unwinder chamber and film substrate take-up winder chamber connected respectively, wherein at least one of the chamber in the vicinity of the communication port it is assumed to include an edge position controller for adjusting the film substrate take-up position.

【0015】請求項6の発明は、同様に成膜の品質向上を図るもので、請求項1ないし5のいずれかに記載のものにおいて、前記反応室内のフィルム基板出入口近傍には、フィルム基板の張力保持用のダンサーロールを備えるものとする。 [0015] The invention of claim 6 is intended to achieve similarly improve the quality of film formation, in as described in any one of claims 1 to 5, the film substrate entrance near the reaction chamber, the film substrate It shall comprise a dancer roll for tension retention.

【0016】さらに、請求項7または8の発明は、製造装置のメンテナンス性の向上を図るもので、前記高周波印加電極を、反応室下部に設けた昇降手段に固定されたものとし(請求項7)、また、反応室内壁へのプラズマによる粉末付着防止用のサブヒータを高周波印加電極の側面と反応室との間の空間に配設するものとする(請求項8)。 Furthermore, the invention of claim 7 or 8, intended to improve the maintainability of the production apparatus, the high frequency application electrode, and that is fixed to the lifting means provided in the reaction chamber lower portion (claim 7 ), also intended to arrange the sub-heater for powder deposition prevention by plasma into the reaction chamber wall in the space between the side surface and the reaction chamber of the high frequency application electrode (claim 8).

【0017】 [0017]

【発明の実施の形態】図面に基づき、本発明の実施の形態について以下に述べる。 Based DETAILED DESCRIPTION OF THE INVENTION drawings, described below embodiments of the present invention.

【0018】図1は、本発明の薄膜半導体の製造装置の実施例であって、反応室が単室の場合の概略構成図である。 [0018] Figure 1 is an embodiment of a thin film semiconductor manufacturing apparatus of the present invention, the reaction chamber is a schematic configuration diagram in the case of a single chamber. 図2は、図1におけるA−A矢視一部詳細断面図である。 Figure 2 is an A-A palm part detailed cross-sectional view in FIG. また、図3および図4は、フィルム基板のたるみや縦皺が発生する問題を解消するための手段に関連した接地電極まわりの部分拡大図である。 Further, FIGS. 3 and 4 is a partial enlarged view around the ground electrode associated with the means for solving the problems of the film substrate sagging and vertical wrinkles are generated.

【0019】まず、図1について述べる。 [0019] First, described with respect to FIG. 1. 図1に示す製造装置は、真空に保持可能な反応室1と、前記反応室へ薄膜に応じた反応ガスを供給するガス供給系2と、前記反応室の圧力を制御しながらガスを排気する排気系3 Manufacturing apparatus shown in FIG. 1, the exhaust and the reaction chamber 1 can be maintained in a vacuum, a gas supply system 2 which supplies a reaction gas in accordance with the thin film into the reaction chamber, the gas while controlling the pressure of the reaction chamber exhaust system 3
と、ほぼ鉛直に配置された複数の高周波印加電極(以下、RF電極ともいう)4と、この高周波印加電極4と対向する位置に配置され、フィルム基板加熱用のヒータを組み込んだ複数の接地電極5と、前記接地電極5と高周波印加電極4との間を前記両電極の主面と略平行にフィルム基板を進行させ,かつフィルム基板に所定の張力をかけるための後述する各種ロールからなる搬送手段と、フィルム基板巻出し用アンワインダー室14と、フィルム基板巻取り用ワインダー室17とから成る。 And a plurality of high-frequency applying electrode that is substantially vertically disposed (hereinafter, also referred to as a RF electrode) and 4, this is arranged in the high frequency application electrode 4 and the counter position, a plurality of ground electrodes incorporating a heater for the film substrate heating 5, transport including various rolls the allowed to proceed substantially parallel to the film substrate and the main surface of the two electrodes between the ground electrode 5 and the high-frequency applying electrode 4, and will be described later for applying a predetermined tension to the film substrate It means a film substrate unwinding for unwinder chamber 14, made of a film substrate take-up winder chamber 17. 反応室1とアンワインダー室14および反応室1とワインダー室17とをそれぞれ接続してフィルム基板を送通するために連通口11が設けられる。 Communication port 11 is provided to Okudori the film substrate by the reaction chamber 1 and the unwinder chamber 14 and the reaction chamber 1 and the winder chamber 17 connected, respectively.

【0020】前記搬送手段は、上部搬送ロール6とその保護手段7,下部搬送ロール8とその保護手段9,水平に配置した巻だしロール12,巻だし用駆動ロール1 [0020] The conveying means, the upper conveyor roll 6 and its protection means 7, the lower transport rolls 8 and its protection means 9, to it winding arranged horizontally rolls 12, unwind drive roll 1
3,巻取りロール15,同駆動ロール16などを含む。 3, take-up roll 15, including the drive roll 16.

【0021】フィルム基板10はアンワインダー室14 [0021] The film substrate 10 is unwinder chamber 14
からワインダー室17へと搬送され、その間に反応室1 Is conveyed to winder chamber 17 from the reaction chamber 1 therebetween
の内部で薄膜半導体を形成する。 Inside to form a thin film semiconductor. 一旦巻き取り、一層の製膜を終了した後、次工程で別の原料ガスを供給し、逆搬送して、異なった半導体膜をフィルム上に形成することが可能である。 Once wound, after completion of the layer of film, to supply a different source gas in the next step, the reverse carrying, it is possible to form a different semiconductor film on the film. この実施例では、電極数が多くなる場合や、フィルム基板が長い場合に、搬送送りを両方向に繰返し行うことになるため、フィルム基板の巻取り位置が重要となる。 In this embodiment, and if the number of electrodes is increased, if the film substrate is long, this means that repeated conveying feed in both directions, the winding position of the film substrate becomes important. そこで、そのような場合には、図中の1 Therefore, in such a case, 1 in FIG.
9、20に示すEPC(エッジポジションコントローラ)により、フィルム基板の位置補正を行う。 The EPC (edge ​​position controller) shown in 9, 20, correct the position of the film substrate. また、図中の21、22は、クリーニングロール機構であり、薄膜半導体を形成する面と逆のフィルム面をクリーニングする機能を有する。 Also, 21 and 22 in the figure, a cleaning roll mechanism has a function of cleaning the surface opposite to the film surface to form a thin film semiconductor. この機能により、複数回装置で搬送を行っても、接地電極との摩擦によって発生したダストがロールへ巻き込まれることが無く、薄膜半導体形成面への影響が無く、欠陥発生が少ない。 This feature, even when the conveyance in multiple devices, without the dust generated by the friction with the ground electrode be involved to roll, there is no influence on the thin-film semiconductor forming surface, little defect occurred. さらにこの実施例においては、フィルム基板に所定の張力を与えるために、ダンサーロール61を反応室の入口付近に設ける。 Further in this embodiment, in order to give a predetermined tension to the film substrate is provided with a dancer roll 61 in the vicinity of the inlet of the reaction chamber.

【0022】この実施例では、反応室が単室であってガスの混入が無いため、連続的にロールツロール成膜を行うことも、ステップ的にステッピングロール成膜を行うことも可能である。 [0022] In this embodiment, since the reaction chamber is no contamination of a single-chamber gas, also, it is possible to perform stepwise the stepping roll film deposition continuously performing roll tool roll deposition . また、この実施例では複数のRF電極に異なる原料ガスを供給することにより、ロールツロールでも、成膜組成を任意に変動させることが可能である。 In addition, by in this embodiment for supplying different raw material gas to the plurality of RF electrodes, also a roll tool roll, it is possible to film formation composition optionally varied.

【0023】図2は、前述の実施例の反応室をフィルム基板の搬送方向に見た一部詳細断面図(図1におけるA [0023] Figure 2, A in Example partial detailed cross-sectional view taken in the conveying direction of the reaction chamber film substrate (FIG. 1 described above
−A矢視断面図)を示す。 It shows the -A sectional view taken along the line). この実施例では、RF電極4 In this embodiment, RF electrode 4
は、RF導入手段21、RF電極保持手段22を介して反応室下部昇降手段23に固定されている。 Is fixed to the reaction chamber lower elevating means 23 via the RF introduction means 21, RF electrode holding means 22. このため、反応室下部昇降手段23を上下させることにより、RF電極の出し入れが可能となり、メンテナンスが容易となる。 Therefore, by lowering the reaction chamber lower lifting means 23 enables out of the RF electrode, thereby facilitating the maintenance. また、接地電極且つヒータ5は反応室上部の保持手段25 The ground electrode and the heater 5 the reaction chamber upper portion of the retaining means 25
に固定されている。 It has been fixed. さらにこの実施例では、RF電極の両側面と反応室との間にサブヒータ24を設けてあり、反応室内壁へのプラズマによるパウダー付着を防止している。 Further in this embodiment, it is provided with a sub heater 24 between the reaction chamber and the sides of the RF electrode, to prevent the powder deposition by plasma into the reaction chamber wall.

【0024】図3は、請求項1に関わる接地電極まわりのフィルム基板搬送構造の一例の部分拡大概略図を示し、図3(a)は、全体図、図3(b)は、位置調整手段に関する図3(a)のP部拡大図、図3(c)は、湾曲した接地電極およびフィルム基板の部分拡大図である。 [0024] Figure 3 shows an example partially enlarged schematic view of the film substrate transfer structure around the ground electrode according to claim 1, 3 (a) is an overall view, FIG. 3 (b), position adjusting means Figure 3 P enlarged view of (a), FIG. 3 (c) relates is a partially enlarged view of a curved ground electrode and the film substrate.

【0025】図3の実施例においては、接地電極33と例えばアルミニウム製のヒータ31とを別の部品として構成し、図3(b)に示すように、例えば段付きネジ3 [0025] In the embodiment of FIG. 3, it constitutes a heater 31 made of the ground electrode 33 such as aluminum as a separate component, as shown in FIG. 3 (b), for example, shoulder screws 3
5とナット36とからなる位置調整手段32により、接地電極33はヒータ31に相互距離が調整可能に取り付けられている。 By 5 a position adjusting means 32 comprising a nut 36. The ground electrode 33 has mutual distance is attached adjustably to the heater 31. 図3(a)の上部搬送ロール6と下部搬送ロール8の位置関係を、フィルム基板10が接地電極33に隣接するようにまずセッティングした上で、上記位置調整手段32によりフィルム基板10と接地電極3 Figure 3 an upper positional relation of the transfer roll 6 and the lower conveying rolls 8 (a), on which the film substrate 10 has first setting so as to be adjacent to the ground electrode 33, the ground electrode and the film substrate 10 by the position adjusting means 32 3
3との距離を微調整し、請求項1に記載のように、フィルム基板10を接地電極33に面接触させるようにする。 The distance between the 3 tweak, as described in claim 1, the film substrate 10 so as to be in surface contact with the ground electrode 33.

【0026】フィルム基板10としては1m幅のポリイミドフィルムを用い、その両面に金属電極を形成した。 [0026] a polyimide film of 1m width as the film substrate 10, to form the metal electrodes on both surfaces thereof.
上下の搬送ロールの間隔は約1mとして、フィルムの保持能力を高めた。 Transport roll spacings of the upper and lower as about 1 m, enhanced the retention of the film. 搬送時には、約2〜20Kg/幅の張力を与えてフィルムを保持した。 During transport it retained the film tensioned about 2~20Kg / width. 縦皺は、この張力が小さいほど少なくなる傾向を示す。 Vertical wrinkles shows the tendency of this tension becomes smaller less. 張力が2〜5Kg/幅の範囲では、ほぼ縦皺が無くなることが確認されている。 Tension in the range of 2~5Kg / width, has been confirmed that substantially vertical wrinkles are eliminated.

【0027】ところで上記の場合、接地電極33は、この場合フィルム基板10と面接触して、フィルム基板に縦皺ができるのを防止するように作用するフィルム基板の受け面(サセプター)として機能する。 By the way of the case, the ground electrode 33, in this case the film substrate 10 and the surface contact, functions as a receiving surface of the film substrate that acts to prevent the can vertical wrinkles in the film substrate (susceptor) . この機能をより確実なものとするためには、サセプターの面は湾曲している方が望ましい。 To make this feature made more reliable, the surface of the susceptor is desirable that curved. 図3(c)に示すように面全体を湾曲させてもよいが、面自体を湾曲させることは、製造コストが大となるので、接地電極であるサセプターとフィルム基板とが接触した際に、図3(c)に示すように水平方向に微小たわみδをもち、曲率半径長大の湾曲面をフィルム基板が形成可能なように、接地電極のフィルム基板対向面に湾曲面形成手段、例えば、接地電極の鉛直方向の随所に埋め込んだ高さの異なるセグメントにより、フィルム基板が湾曲面を形成するようになし、フィルム基板の縦皺発生の防止の向上を図ることができる。 It may be curved across the surface as shown in FIG. 3 (c), be curved surface itself, since the manufacturing cost is large, when the the susceptor and the film substrate is a ground electrode in contact, 3 has a small deflection δ in the horizontal direction as shown in (c), the curved surface of curvature radius long to allow the film substrate is formed, the curved surface forming means on the film substrate opposing surface of the ground electrode, e.g., ground the vertical height of different segments embedded throughout the electrode, no such film substrate to form a curved surface, it is possible to improve the prevention of vertical wrinkles in the film substrate.

【0028】図4は、請求項3に関わる接地電極まわりのフィルム基板搬送構造の一例の部分拡大概略図を示し、図4(a)は、全体図、図4(b)は、ガス膜形成手段に関する図4(a)のB−B矢視拡大図である。 [0028] Figure 4 shows an example partially enlarged schematic view of the film substrate transfer structure around the ground electrode according to claim 3, 4 (a) is an overall view, FIG. 4 (b), the gas film formation is a diagram 4 B-B arrow view enlarged view of (a) to means.

【0029】図4の実施例においても、上部搬送ロール6と下部搬送ロール8の位置関係を、フィルム基板10 [0029] Also in the embodiment of FIG. 4, the positional relationship of the upper conveyor roller 6 and the lower conveyor roll 8, the film substrate 10
が接地電極43に隣接するようにセッティングした上で、上記位置調整手段32によりフィルム基板と接地電極との距離を微調整し、フィルム基板10を接地電極4 On but that setting so as to be adjacent to the ground electrode 43, the distance between the film substrate and the ground electrode by the position adjusting means 32 is finely adjusted, a ground film substrate 10 electrode 4
3に、面接触できるように構成する点では、前記図3の実施例と共通している。 3, in terms be configured to allow surface contact, in common with the embodiment of FIG 3. 図4の実施例においては、さらに、図4(b)に示すように、接地電極43が、図示しないガス流入口からガスを導入し、フィルム基板10との隣接面に複数個設けたガス供給口42からフィルム基板に対して反応ガスないしは反応ガスの一部のガスを供給し、接地電極とフィルム基板との間にフィルム基板平坦度保持用のガス膜を形成するためのガス膜形成手段を備える。 In the embodiment of FIG. 4, further, as shown in FIG. 4 (b), a ground electrode 43, a gas is introduced from the gas inlet (not shown), a gas supply provided plurality in the adjacent surface of the film substrate 10 supplying a portion of gas in the reaction gas or reaction gas from the mouth 42 to the film substrate, the gas film forming means for forming a gas film for the film substrate flatness retained between the ground electrode and the film substrate provided.

【0030】このガス膜形成手段があれば、前記の位置調整手段32を省略してもよいが、その場合には、上部搬送ロール6と下部搬送ロール8の位置関係の精度を高める必要がある。 [0030] With this gas film forming means, may be omitted position adjusting means 32 of the but, in that case, it is necessary to increase the accuracy of the positional relationship between the upper transport roller 6 and the lower conveyor rolls 8 . 上記構成により、縦皺の発生をガス圧力により防止することができる。 With the above structure, the generation of vertical wrinkles can be prevented by the gas pressure. ガスは、フィルム基板が若干湾曲するように中央のガス圧が高くなるように供給することが望ましい。 Gas is preferably a film substrate is provided so that the center of the gas pressure is increased to be curved slightly.

【0031】図5は、複数の反応室を備えたこの発明の異なる実施例を示す。 [0031] Figure 5 illustrates a different embodiment of the invention with a plurality of reaction chambers. 図1の実施例との相違点は、三つの反応室51、52、53を備え、これらの反応室の前後にシール機構54、55、56、57を有する点である。 It differs from the embodiment of Figure 1, provided with three reaction chambers 51, 52, 53, a point having a sealing mechanism 54, 55, 56 and 57 before or after these reaction chamber. このシール機構を採用することにより、ステップロールでフィルム基板を1コマ送った後に停止し、反応室間のガスの混入を防ぎ、固定位置で成膜を行い、成膜終了後に、再びシール機構を開放して1コマ搬送を行うことができる。 By adopting this sealing mechanism, to stop the film substrate in step a roll after sending one frame, it prevents contamination of the gas between the reaction chamber, subjected to deposition in a fixed position, after the completion of film formation, again sealing mechanism open and it is possible to perform one frame transport. 反応室間のシールは非常に短い間隔で行うことが可能である。 Seal between the reaction chamber can be carried out at very short intervals. この実施例によれば、n、i、p型の半導体を各室で独立して成膜可能である。 According to this embodiment, a film can be formed independently n, i, and p-type semiconductor in each chamber.

【0032】なお、以上の実施例においては、RF電極が下部の昇降機構に固定された例を示したが、RF電極が反応室の扉に固定され、扉が手前に引き出されるレールを備えた構成とすることもできる。 [0032] In the above embodiment, although the RF electrodes an example in which is fixed to a lower portion of the lifting mechanism, the RF electrode is fixed to the door of the reaction chamber, provided with a rail which door is drawn to the front It can also be configured.

【0033】 [0033]

【発明の効果】前述のように、この発明によれば、フィルム基板の搬送手段を、前記フィルム基板が接地電極に隣接して進行するような位置関係を維持するものとなし、かつ接地電極は、前記フィルム基板をこの接地電極に面接触させるように,フィルム基板と接地電極との距離を微調整するための位置調整手段を備えたものとしたこと(請求項1)または、前記接地電極は、前記フィルム基板との隣接面からフィルム基板に対して反応ガスないしは反応ガスの一部のガスを供給し、接地電極とフィルム基板との間にフィルム基板平坦度保持用のガス膜を形成するためのガス膜形成手段を備えたものとしたこと(請求項2)ないし前記請求項1と2の組み合わせ(請求項3)により、フィルム基板は適正な張力を受けつつも接地電極のガイド [Effect of the Invention] As described above, according to the present invention, the conveying means of the film substrate, the film substrate without shall maintain a positional relationship as to proceed adjacent to the ground electrode, and the ground electrode , the film substrate so as to surface contact with the ground electrode, it was assumed that with a position adjusting means for finely adjusting the distance between the film substrate and the ground electrode (claim 1) or the ground electrode , the film supplies a portion of the gas in the reaction gas or reaction gas from the adjacent surface to the film substrate with the substrate to form a gas film for the film substrate flatness retained between the ground electrode and the film substrate guide by which the one having a gas film formation means the combination of (claim 2) to claim 1 and 2 (claim 3), also the ground electrode film substrates undergoing appropriate tension 果またはガス膜圧により、縦皺の発生が防止できる。 The fruit or gas film pressure, occurrence of vertical wrinkles can be prevented. また、接地電極のフィルム基板対向面は、湾曲面とする、または湾曲面形成手段を備えるものとしたこと(請求項4)により、縦皺発生防止効果はさらに向上する。 The film substrate opposing surface of the ground electrode is a curved surface, or by those with a curved surface forming means and the possible (claim 4), striation prevention effect is further improved. さらに、エッジポジションコントローラやダンサーロールを備えること(請求項5ないし6) Furthermore, providing the edge-position controller or dancer roll (5 to claim 6)
により、成膜の品質向上を図ることができる。 Accordingly, it is possible to improve the quality of the film formation. さらにまた、高周波印加電極を、反応室下部に設けた昇降手段に固定されたものとし(請求項7)、反応室内壁へのプラズマによる粉末付着防止用のサブヒータを高周波印加電極の側面と反応室との間の空間に配設する(請求項8) Furthermore, the high frequency application electrode, and that is fixed to the lifting means provided in the reaction chamber lower portion (claim 7), the reaction chamber sub-heater for powder deposition prevention by plasma into the reaction chamber wall and the side surface of the powered electrode disposed in the space between the (claim 8)
により、メンテナンス性の向上を図ることができる。 Accordingly, it is possible to improve the maintainability.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の薄膜半導体の製造装置の実施例の概略構成図である。 1 is a schematic configuration diagram of an embodiment of a thin film semiconductor manufacturing apparatus of the present invention.

【図2】図1におけるA−A矢視一部詳細断面図である。 2 is a detailed cross-sectional view A-A palm portion in FIG.

【図3】請求項1に関わる接地電極まわりのフィルム基板搬送構造の一例の部分拡大図である。 Figure 3 is an example partial enlarged view of the film substrate transfer structure around the ground electrode according to claim 1.

【図4】請求項3に関わる接地電極まわりのフィルム基板搬送構造の一例の部分拡大図である。 FIG. 4 is an example partial enlarged view of the film substrate carrier structure of the ground electrode around according to claim 3.

【図5】複数の反応室を備えたこの発明の異なる実施例を示す図である。 5 is a diagram illustrating different embodiments of the invention with a plurality of reaction chambers.

【符号の説明】 DESCRIPTION OF SYMBOLS

1,51,52,53:反応室、2:ガス供給系、3: 1,51,52,53: Reaction chamber 2: Gas supply system, 3:
排気系、4:高周波印加電極、5,33,43:接地電極、6:上部搬送ロール、8:下部搬送ロール、10: Exhaust system 4: powered electrode, 5,33,43: ground electrode 6: upper transport rolls, 8: lower transport roll, 10:
フィルム基板、11:連通口、14:ワインダー室、1 Film substrate, 11: communicating port, 14: winder chamber, 1
7:アンワインダー室、19,20:エッジポジションコントローラ、23:昇降手段、24:サブヒータ、3 7: unwinder chamber, 19, 20: edge position controller, 23: lifting means, 24: sub-heater, 3
1:ヒータ、32:位置調整手段、42:ガス供給口、 1: heater, 32: position adjusting means, 42: gas supply port,
61:ダンサーロール。 61: dancer roll.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 5F045 AF07 CA13 DP22 EB02 EH13 EM01 EM07 5F051 AA04 AA05 BA11 BA14 BA15 CA16 CA22 CA23 CA24 GA05 ────────────────────────────────────────────────── ─── front page of continued F-term (reference) 5F045 AF07 CA13 DP22 EB02 EH13 EM01 EM07 5F051 AA04 AA05 BA11 BA14 BA15 CA16 CA22 CA23 CA24 GA05

Claims (8)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 帯状可撓性のフィルム基板の面上に複数の異なる性質の薄膜を積層して薄膜半導体を形成するための少なくとも一つの反応室と、前記反応室へ薄膜に応じた反応ガスを供給するガス供給系と、前記反応室の圧力を制御しながらガスを排気する排気系と、前記反応室内にほぼ鉛直に配置された複数の高周波印加電極と、この高周波印加電極と対向する位置に配置された複数の接地電極と、前記フィルム基板加熱用のヒータと、前記接地電極と高周波印加電極との間を前記両電極の主面と略平行にフィルム基板を進行させ,かつフィルム基板に所定の張力をかけるための搬送手段と、前記フィルム基板巻出し用アンワインダー室と、フィルム基板巻取り用ワインダー室とを備えた薄膜半導体の製造装置において、 1. A and at least one reaction chamber for forming a thin film semiconductor with a thin film of a plurality of different nature to the surface of the film substrate of strip-shape flexible laminated, the reaction gas in accordance with the thin film into the reaction chamber a gas supply system for supplying the exhaust system for exhausting gas while controlling the pressure in the reaction chamber, a plurality of high-frequency applying electrode that is substantially vertically disposed in the reaction chamber, a position opposite to the powered electrode a plurality of ground electrodes arranged on the the film heater of the substrate for heating, wherein proceeded main surface substantially parallel to the film substrate between the electrodes between the ground electrode and the high frequency application electrode and the film substrate a conveying means for applying a predetermined tension, and the film substrate unwinding for unwinder chamber, in the semiconductor manufacturing device thin film having a film substrate take-up winder chamber,
    前記搬送手段は、前記フィルム基板が接地電極に隣接して進行するような位置関係を維持するものとなし、かつ前記接地電極は、前記フィルム基板をこの接地電極に面接触させるように,フィルム基板と接地電極との距離を微調整するための位置調整手段を備えたことを特徴とする薄膜半導体の製造装置。 It said conveying means, without intended to the film substrate to maintain the position relation as to proceed adjacent to the ground electrode, and the ground electrode, the film substrate so as to surface contact with the ground electrode, a film substrate thin film semiconductor manufacturing apparatus characterized by comprising a position adjusting means for finely adjusting the distance between the ground electrode.
  2. 【請求項2】 帯状可撓性のフィルム基板の面上に複数の異なる性質の薄膜を積層して薄膜半導体を形成するための少なくとも一つの反応室と、前記反応室へ薄膜に応じた反応ガスを供給するガス供給系と、前記反応室の圧力を制御しながらガスを排気する排気系と、前記反応室内にほぼ鉛直に配置された複数の高周波印加電極と、この高周波印加電極と対向する位置に配置された複数の接地電極と、前記フィルム基板加熱用のヒータと、前記接地電極と高周波印加電極との間を前記両電極の主面と略平行にフィルム基板を進行させ,かつフィルム基板に所定の張力をかけるための搬送手段と、前記フィルム基板巻出し用アンワインダー室と、フィルム基板巻取り用ワインダー室とを備えた薄膜半導体の製造装置において、 2. A and at least one reaction chamber for forming a thin film semiconductor with a thin film of a plurality of different nature to the surface of the film substrate of strip-shape flexible laminated, the reaction gas in accordance with the thin film into the reaction chamber a gas supply system for supplying the exhaust system for exhausting gas while controlling the pressure in the reaction chamber, a plurality of high-frequency applying electrode that is substantially vertically disposed in the reaction chamber, a position opposite to the powered electrode a plurality of ground electrodes arranged on the the film heater of the substrate for heating, wherein proceeded main surface substantially parallel to the film substrate between the electrodes between the ground electrode and the high frequency application electrode and the film substrate a conveying means for applying a predetermined tension, and the film substrate unwinding for unwinder chamber, in the semiconductor manufacturing device thin film having a film substrate take-up winder chamber,
    前記搬送手段は、前記フィルム基板が接地電極に隣接して進行するような位置関係を維持するものとなし、かつ前記接地電極は、前記フィルム基板との隣接面からフィルム基板に対して反応ガスないしは反応ガスの一部のガスを供給し、接地電極とフィルム基板との間にフィルム基板平坦度保持用のガス膜を形成するためのガス膜形成手段を備えたことを特徴とする薄膜半導体の製造装置。 It said conveying means, without intended to the film substrate to maintain the position relation as to proceed adjacent to the ground electrode, and the ground electrode, the reaction gas to the film substrate from the adjacent surface of the film substrate or some of the gas in the reaction gas is supplied, the manufacture of thin-film semiconductor, characterized in that it comprises a gas film forming means for forming a gas film for the film substrate flatness retained between the ground electrode and the film substrate apparatus.
  3. 【請求項3】 請求項2に記載の装置において、前記接地電極は、ガス膜形成手段に加え、さらに、フィルム基板と接地電極との距離を微調整するための位置調整手段を備えたことを特徴とする薄膜半導体の製造装置。 3. A device according to claim 2, said ground electrode, in addition to the gas film forming means, further comprising a position adjusting means for finely adjusting the distance between the film substrate and the ground electrode a thin film semiconductor manufacturing apparatus according to claim.
  4. 【請求項4】 請求項1ないし3のいずれかに記載のものにおいて、前記接地電極とフィルム基板とが接触した際には,水平方向に微小たわみをもち曲率半径長大の湾曲面をフィルム基板が形成可能なように、接地電極のフィルム基板対向面は、湾曲面とする、または湾曲面形成手段を備えたことを特徴とする薄膜半導体の製造装置。 4. A as described in any one of claims 1 to 3, when said ground electrode and the film substrate is in contact, the film substrate curvature has a small deflection in the horizontal direction radially long curved surface as formation possible, the film substrate facing surface of the ground electrode, the manufacturing apparatus of a thin film semiconductor, characterized in that it comprises a or curved surface forming means is a curved surface.
  5. 【請求項5】 請求項1ないし4のいずれかに記載のものにおいて、前記反応室は単室であり、この反応室とフィルム基板巻出し用アンワインダー室および反応室とフィルム基板巻取り用ワインダー室とをそれぞれ接続してフィルム基板を送通するための連通口を有し、前記少なくともいずれかの室内の前記連通口の近傍には、フィルム基板巻取り位置調整用のエッジポジションコントローラを備えたことを特徴とする薄膜半導体の製造装置。 5. A as described in any one of claims 1 to 4, wherein the reaction chamber is a single chamber, the reaction chamber and the film substrate unwinding for unwinder chamber and the reaction chamber and the film substrate take-up winder has a communication port for Okudori the film substrate connects the chamber, respectively, wherein in the vicinity of at least one of the communication port of the chamber, with an edge position controller for adjusting the film substrate winding position apparatus for manufacturing a thin film semiconductor, characterized in that.
  6. 【請求項6】 請求項1ないし5のいずれかに記載のものにおいて、前記反応室内のフィルム基板出入口近傍には、フィルム基板の張力保持用のダンサーロールを備えたことを特徴とする薄膜半導体の製造装置。 6. A as described in any one of claims 1 to 5, the film substrate entrance near the reaction chamber, the thin-film semiconductor, characterized in that it comprises a dancer roll for tension holding the film substrate Manufacturing equipment.
  7. 【請求項7】 請求項1ないし6のいずれかに記載のものにおいて、前記高周波印加電極は、反応室下部に設けた昇降手段に固定されたことを特徴とする薄膜半導体の製造装置。 7. A as described in any one of claims 1 to 6, wherein the powered electrode is a thin film semiconductor manufacturing apparatus characterized in that it is fixed to the lifting means provided in the reaction chamber lower portion.
  8. 【請求項8】 請求項1ないし7のいずれかに記載のものにおいて、反応室内壁へのプラズマによる粉末付着防止用のサブヒータを高周波印加電極の側面と反応室との間の空間に配設したことを特徴とする薄膜半導体の製造装置。 8. A as described in any one of claims 1 to 7, were provided with the sub-heater for powder deposition prevention by plasma into the reaction chamber wall in the space between the side surface and the reaction chamber of the powered electrode apparatus for manufacturing a thin film semiconductor, characterized in that.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6610357B2 (en) 2000-12-01 2003-08-26 Sanyo Electric Co., Ltd. Method for fabricating electrode for lithium secondary battery
WO2007026545A1 (en) * 2005-08-31 2007-03-08 Konica Minolta Holdings, Inc. Plasma discharge processing device and production method of gas barrier film
KR100881333B1 (en) 2007-08-31 2009-02-02 주식회사 케이씨텍 Device for transferring thin printed circuit board
JP2010174288A (en) * 2009-01-28 2010-08-12 Fuji Electric Holdings Co Ltd Equipment for manufacturing thin film
JP2013258412A (en) * 2008-03-31 2013-12-26 Ngk Insulators Ltd Silicon-based thin film mass production apparatus

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6610357B2 (en) 2000-12-01 2003-08-26 Sanyo Electric Co., Ltd. Method for fabricating electrode for lithium secondary battery
WO2007026545A1 (en) * 2005-08-31 2007-03-08 Konica Minolta Holdings, Inc. Plasma discharge processing device and production method of gas barrier film
EP1921180A1 (en) * 2005-08-31 2008-05-14 Konica Minolta Holdings, Inc. Plasma discharge processing device and production method of gas barrier film
JPWO2007026545A1 (en) * 2005-08-31 2009-03-05 コニカミノルタホールディングス株式会社 Method of manufacturing a plasma discharge treatment apparatus and a gas barrier film
EP1921180A4 (en) * 2005-08-31 2010-03-17 Konica Minolta Holdings Inc Plasma discharge processing device and production method of gas barrier film
KR100881333B1 (en) 2007-08-31 2009-02-02 주식회사 케이씨텍 Device for transferring thin printed circuit board
JP2013258412A (en) * 2008-03-31 2013-12-26 Ngk Insulators Ltd Silicon-based thin film mass production apparatus
JP2010174288A (en) * 2009-01-28 2010-08-12 Fuji Electric Holdings Co Ltd Equipment for manufacturing thin film

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