JP2000200870A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JP2000200870A JP2000200870A JP31390199A JP31390199A JP2000200870A JP 2000200870 A JP2000200870 A JP 2000200870A JP 31390199 A JP31390199 A JP 31390199A JP 31390199 A JP31390199 A JP 31390199A JP 2000200870 A JP2000200870 A JP 2000200870A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- substrate
- semiconductor chip
- reinforcing plate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置およびそ
の製造方法に関する。The present invention relates to a semiconductor device and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】図１６に示す従来の半導体装置の一例に
ついて以下に説明する。図示しない導通パターンが形成
されている基板３１上に半導体チップ３２がフリップチ
ップ接続されて、共晶ハンダ３３により導通パターンと
電気的に接続されている。半導体チップ３２の近傍に
は、チップ状電気部品３４が共晶ハンダ３５により取り
付けられ、基板３１上の図示しない導通パターンと電気
的に接続されている。そして、半導体チップ３２の一方
の面（図面下方のデバイス形成面）と基板３１との間に
絶縁性のアンダーフィル樹脂３６が注入され、共晶ハン
ダ３３の存在しない部分に充填された後で固化されて、
半導体チップ３２と基板３１とが強固に固定されてい
る。2. Description of the Related Art An example of a conventional semiconductor device shown in FIG. 16 will be described below. A semiconductor chip 32 is flip-chip connected to a substrate 31 on which a conductive pattern (not shown) is formed, and is electrically connected to the conductive pattern by eutectic solder 33. In the vicinity of the semiconductor chip 32, a chip-shaped electric component 34 is attached by eutectic solder 35, and is electrically connected to a conductive pattern (not shown) on the substrate 31. Then, an insulating underfill resin 36 is injected between one surface of the semiconductor chip 32 (device forming surface in the lower part of the drawing) and the substrate 31, and is filled in a portion where the eutectic solder 33 does not exist. Being
The semiconductor chip 32 and the substrate 31 are firmly fixed.
【０００３】通常、半導体チップ３２には高温ハンダの
バンプが設けられ、高温ハンダより低温で溶融する共晶
ハンダが、半導体チップのバンプに対応して基板に設け
られており、高温ハンダの溶融しない低温で共晶ハンダ
のみを溶融させ、バンプを包み込むようにして固化させ
ている。また、基板３１の、半導体チップ３２およびチ
ップ状電気部品３４が接続されている面と反対側の面に
は、複数のハンダボール（共晶ハンダ）３７が設けられ
てＢＧＡ（Ball Grid Array）パッケージ構造となって
いる。したがって、この半導体装置の完成後に他の基板
等に接続する場合、複数のハンダボール３７を一旦溶融
させその後固化することにより接続および固着を行なう
が、このとき、基板３１を介して伝わる熱により、基板
３１と半導体チップ３２とを接続している共晶ハンダ３
３がハンダボール３７と同様に一旦溶融し、それにより
基板３１と半導体チップ３２との相対位置関係がずれる
などして接続が不安定になるおそれがある。このよう
に、基板３１と半導体チップ３２とを共晶ハンダ３３の
みで固定すると信頼性が低いので、基板３１と半導体チ
ップ３２との間にアンダーフィル樹脂３６を注入して固
化し、このアンダーフィル樹脂３６により基板３１と半
導体チップ３２とを固定する構成としている。こうする
と、共晶ハンダからなるハンダボール３７を溶融するた
めの加熱温度を、アンダーフィル樹脂３６が劣化しない
程度に低く設定することにより、基板３１と半導体チッ
プ３２との接続の信頼性が高くなる。Normally, a semiconductor chip 32 is provided with high-temperature solder bumps, and eutectic solder, which melts at a lower temperature than the high-temperature solder, is provided on the substrate corresponding to the semiconductor chip bumps, so that the high-temperature solder does not melt. Only the eutectic solder is melted at a low temperature and solidified so as to enclose the bumps. A plurality of solder balls (eutectic solder) 37 are provided on a surface of the substrate 31 opposite to a surface to which the semiconductor chip 32 and the chip-shaped electric component 34 are connected, and a BGA (Ball Grid Array) package is provided. It has a structure. Therefore, when the semiconductor device is connected to another substrate or the like after completion of the semiconductor device, the plurality of solder balls 37 are once melted and then solidified to perform connection and fixation. At this time, heat transmitted through the substrate 31 Eutectic solder 3 connecting substrate 31 and semiconductor chip 32
3 may be melted once like the solder ball 37, and the relative positional relationship between the substrate 31 and the semiconductor chip 32 may be shifted, thereby making the connection unstable. Since the reliability is low when the substrate 31 and the semiconductor chip 32 are fixed only by the eutectic solder 33, the underfill resin 36 is injected between the substrate 31 and the semiconductor chip 32 to be solidified. The structure is such that the substrate 31 and the semiconductor chip 32 are fixed by the resin 36. In this case, the reliability of the connection between the substrate 31 and the semiconductor chip 32 is improved by setting the heating temperature for melting the solder balls 37 made of eutectic solder to be low enough not to deteriorate the underfill resin 36. .
【０００４】半導体チップ３２の他方の面（図１６にお
いて上方に位置する面）には導電性の接着樹脂３８が塗
布され、この接着樹脂により金属製（導電性で熱伝達効
率がよい）の蓋部材３９が取り付けられている。この蓋
部材３９は、半導体チップ３２の発熱に伴う熱を逃す放
熱効果を有するとともに、半導体チップ３２からグラン
ド電位に接地する作用がある。さらに、半導体チップ３
２やチップ状電気部品３４が取り付けられている空間の
周囲を取り囲むように導電性の補強板４０が設けられて
いる。この補強板４０も導電性接着樹脂４１で接着され
ているため、半導体チップ３２やチップ状電気部品３４
が取り付けられている空間４２が、蓋部材３９および補
強板４０により電磁的にシールドされる。A conductive adhesive resin 38 is applied to the other surface of the semiconductor chip 32 (the surface located upward in FIG. 16), and a metal cover (conductive and has high heat transfer efficiency) is formed by the adhesive resin. A member 39 is attached. The lid member 39 has a heat radiating effect of releasing heat accompanying the heat generation of the semiconductor chip 32 and has an action of grounding the semiconductor chip 32 to the ground potential. Further, the semiconductor chip 3
An electrically conductive reinforcing plate 40 is provided so as to surround the periphery of the space where the chip 2 and the chip-shaped electric component 34 are attached. Since the reinforcing plate 40 is also bonded by the conductive adhesive resin 41, the semiconductor chip 32 and the chip-like electric component 34
Is electromagnetically shielded by the lid member 39 and the reinforcing plate 40.
【０００５】[0005]
【発明が解決しようとする課題】前記した従来例におい
て、半導体チップ３２の他方の面に塗布される蓋部材接
着用の導電性接着樹脂３８の塗布量が多すぎると、図１
７に示すようにチップ状電気部品３４にまで接着樹脂３
８が接触するおそれがある。その場合、半導体チップ３
２とチップ状電気部品３４との間、また複数のチップ状
電気部品３４同士の間で、導電性接着樹脂３８を介して
電気的に短絡してしまい、半導体装置としての機能を果
たせない。もちろん、接着樹脂３８の塗布量が少なすぎ
ると、蓋部材３９の固定が不十分で不安定になってしま
う。従って、接着樹脂３８の塗布には極めて精緻な作業
が必要とされている。In the conventional example described above, if the amount of the conductive adhesive resin 38 for bonding the lid member applied to the other surface of the semiconductor chip 32 is too large, FIG.
As shown in FIG. 7, the adhesive resin 3 extends to the chip-shaped electric component 34.
8 may come into contact. In that case, the semiconductor chip 3
2 and the plurality of chip-shaped electric components 34, and between the plurality of chip-shaped electric components 34, are electrically short-circuited via the conductive adhesive resin 38, and cannot function as a semiconductor device. Of course, if the application amount of the adhesive resin 38 is too small, the fixing of the lid member 39 will be insufficient and unstable. Therefore, the application of the adhesive resin 38 requires an extremely fine operation.
【０００６】また、チップ状電気部品３４は共晶ハンダ
３５のみにより基板３１に固定されているので、固定強
度が低く脱落してしまうおそれがある。特に、基板３１
の、半導体チップ３２およびチップ状電気部品３４が接
続されている面と反対側の面に設けられたハンダボール
３７を用いて他部品に固着される工程において、ハンダ
リフロー時の加熱によりチップ状電気部品３４を基板３
１に固定している共晶ハンダ３５も溶融し、チップ状電
気部品３４が脱落しやすくなる。チップ状電気部品３４
を固定するハンダ３５と、同じく共晶ハンダからなるハ
ンダボール３７とは、ほぼ同時に溶融するので、ハンダ
ボール３７の溶融時にチップ状電気部品３４を固定しき
れなくなる可能性が高い。Further, since the chip-shaped electric component 34 is fixed to the substrate 31 only by the eutectic solder 35, the fixing strength is low and the chip-shaped electric component 34 may fall off. In particular, the substrate 31
In the step of fixing to the other component using the solder ball 37 provided on the surface opposite to the surface to which the semiconductor chip 32 and the chip-shaped electric component 34 are connected, the chip-shaped electric device is heated by solder reflow. Component 34 to substrate 3
The eutectic solder 35 fixed to 1 also melts, and the chip-shaped electric component 34 is easily dropped. Chip-shaped electric component 34
And the solder ball 37, which is also made of eutectic solder, are melted almost at the same time. Therefore, when the solder ball 37 is melted, there is a high possibility that the chip-shaped electric component 34 cannot be completely fixed.
【０００７】そこで本発明の目的は、半導体チップやチ
ップ状電気部品の電気的短絡を防ぎ、チップ状電気部品
を脱落しにくくする半導体装置およびその製造方法を提
供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device which prevents an electrical short circuit of a semiconductor chip or a chip-shaped electric component and makes it difficult for the chip-shaped electric component to fall off, and a method of manufacturing the same.
【０００８】[0008]
【課題を解決するための手段】本発明の半導体装置は、
一方の面が基板上にフリップチップ接続されている半導
体チップと、前記基板上であって前記半導体チップの近
傍に取り付けられているチップ状電気部品と、前記チッ
プ状電気部品の全体を覆うとともに前記半導体チップの
前記一方の面と前記基板との間を埋めている絶縁性のア
ンダーフィル樹脂と、前記半導体チップの他方の面に、
導電性接着樹脂を介して固着されている蓋部材とを有す
る。According to the present invention, there is provided a semiconductor device comprising:
A semiconductor chip having one surface flip-chip connected to the substrate, a chip-shaped electric component mounted on the substrate and near the semiconductor chip, and An insulating underfill resin filling the space between the one surface of the semiconductor chip and the substrate, and on the other surface of the semiconductor chip,
A lid member fixed via a conductive adhesive resin.
【０００９】そして、前記半導体チップおよび前記チッ
プ状電気部品と前記基板とは、ハンダを介して電気的接
続がとられた上で、前記ハンダによる接続部以外の部分
に充填された前記アンダーフィル樹脂により互いに固着
されていてもよい。The semiconductor chip, the chip-like electric component, and the substrate are electrically connected to each other via solder, and then the underfill resin is filled in a portion other than a connection portion by the solder. May be fixed to each other.
【００１０】前記半導体チップの前記他方の面が導電性
を有することが好ましい。It is preferable that the other surface of the semiconductor chip has conductivity.
【００１１】前記蓋部材と前記基板との間に介在する補
強板を有することが好ましい。It is preferable that a reinforcing plate is provided between the lid member and the substrate.
【００１２】さらにこの場合、前記補強板が、前記半導
体チップおよび前記チップ状電気部品が設けられている
空間の周囲を取り囲むように設けられていることが好ま
しい。Further, in this case, it is preferable that the reinforcing plate is provided so as to surround the periphery of the space where the semiconductor chip and the chip-shaped electric component are provided.
【００１３】さらに、前記蓋部材と前記補強板とが、導
電性を有するとともに導電性接着樹脂にて接着されてお
り、前記半導体チップを電磁的にシールドすることがよ
り好ましい。Further, it is more preferable that the lid member and the reinforcing plate have conductivity and are bonded by a conductive adhesive resin, and electromagnetically shield the semiconductor chip.
【００１４】前記基板の、前記半導体チップおよび前記
チップ状電気部品が接続されている面と反対側の面に、
複数のハンダボールが設けられて、ＢＧＡ（Ball Grid
Array）パッケージ構造となっていてもよい。On the surface of the substrate opposite to the surface to which the semiconductor chip and the chip-shaped electric component are connected,
A plurality of solder balls are provided and a BGA (Ball Grid
Array) It may have a package structure.
【００１５】また、前記蓋部材の一部を除いて、前記基
板と前記半導体チップと前記チップ状電気部品とアンダ
ーフィル樹脂とをモールドするモールド樹脂と、前記基
板に接続され前記モールド樹脂の外部へ突出するリード
フレームを有する構成であってもよい。[0015] Also, excluding a part of the lid member, a molding resin for molding the substrate, the semiconductor chip, the chip-like electric component, and the underfill resin, and a molding resin connected to the substrate and out of the molding resin. A configuration having a protruding lead frame may be used.
【００１６】本発明の半導体装置の他の特徴は、半導体
チップが搭載された基板と、前記基板に取り付けられて
いる、前記半導体チップを取り囲む枠状の導電性の補強
板と、前記補強板上に取り付けられ前記半導体チップか
ら発生する熱を外に排出する放熱板である導電性の蓋部
材とを有し、前記補強板には板厚方向に貫通する孔部が
設けられており、該孔部に充填されている導電性接着樹
脂により、前記基板と前記補強板と前記蓋部材とが導通
しているところにある。Another feature of the semiconductor device of the present invention is that a substrate on which a semiconductor chip is mounted, a frame-shaped conductive reinforcing plate surrounding the semiconductor chip attached to the substrate, A conductive lid member that is a heat sink that discharges heat generated from the semiconductor chip to the outside, and the reinforcing plate is provided with a hole that penetrates in a plate thickness direction. The substrate, the reinforcing plate, and the lid member are electrically connected by the conductive adhesive resin filled in the portion.
【００１７】半導体装置のさらに他の特徴は、半導体チ
ップが搭載された基板と、前記基板上であって前記半導
体チップの近傍に取り付けられているチップ状電気部品
と、前記基板に取り付けられている補強板と、前記補強
板上に取り付けられ前記半導体チップから発生する熱を
外に排出する放熱板である蓋部材とを有し、前記補強板
が、前記半導体チップおよび前記チップ状部品が設けら
れた領域の外形に沿って前記半導体チップおよび前記チ
ップ状部品を取り囲む枠状に形成されているところにあ
る。Still another feature of the semiconductor device is that a substrate on which the semiconductor chip is mounted, a chip-shaped electric component mounted on the substrate near the semiconductor chip, and mounted on the substrate A reinforcing plate, and a lid member that is mounted on the reinforcing plate and is a heat sink that discharges heat generated from the semiconductor chip to the outside, wherein the reinforcing plate is provided with the semiconductor chip and the chip-shaped component. In the form of a frame surrounding the semiconductor chip and the chip-like component along the outer shape of the region.
【００１８】本発明の半導体装置の製造方法は、フリッ
プチップ接続により半導体チップの一方の面を基板上に
取り付ける工程と、前記基板上であって前記半導体チッ
プの近傍にチップ状電気部品を取り付ける工程と、前記
チップ状電気部品の全体を覆うとともに前記半導体チッ
プの前記一方の面と前記基板との間を埋めるように絶縁
性のアンダーフィル樹脂を注入し固化する工程と、前記
半導体チップの他方の面に導電性接着樹脂を塗布する工
程と、前記導電性接着樹脂を介して前記半導体チップの
前記他方の面に蓋部材を固着する工程とを含む。According to the method of manufacturing a semiconductor device of the present invention, a step of mounting one surface of a semiconductor chip on a substrate by flip-chip connection, and a step of mounting a chip-shaped electric component on the substrate and near the semiconductor chip A step of injecting and solidifying an insulating underfill resin so as to cover the entirety of the chip-shaped electric component and to fill a space between the one surface of the semiconductor chip and the substrate; and A step of applying a conductive adhesive resin to the surface; and a step of fixing a lid member to the other surface of the semiconductor chip via the conductive adhesive resin.
【００１９】そして、前記半導体チップの取り付け工程
にて、前記半導体チップの前記一方の面と前記基板とを
ハンダにより電気的に接続し、前記チップ状電気部品の
取り付け工程にて、前記チップ状電気部品と前記基板と
をハンダにより電気的に接続してもよい。In the attaching step of the semiconductor chip, the one surface of the semiconductor chip and the substrate are electrically connected by soldering, and in the attaching step of the chip-like electric component, The component and the substrate may be electrically connected by solder.
【００２０】前記基板上には補強板が取り付けられてお
り、該補強板の上面に接着樹脂を塗布する工程を含み、
前記蓋部材の固着工程にて、前記接着樹脂を介して蓋部
材と前記補強板とを固着させてもよい。A reinforcing plate is mounted on the substrate, and a step of applying an adhesive resin to an upper surface of the reinforcing plate is included,
In the fixing step of the lid member, the lid member and the reinforcing plate may be fixed via the adhesive resin.
【００２１】前記基板の、前記半導体チップおよび前記
チップ状電気部品が接続されている面と反対側の面に、
複数のハンダボールを設ける工程を含んでもよい。On the surface of the substrate opposite to the surface to which the semiconductor chip and the chip-shaped electric component are connected,
A step of providing a plurality of solder balls may be included.
【００２２】また、前記基板にリードフレームを接続す
る工程と、前記蓋部材の一部と前記リードフレームの一
部とを除いて、前記基板と前記半導体チップと前記チッ
プ状電気部品とアンダーフィル樹脂とをモールド樹脂に
よりモールドする工程とを含んでもよい。A step of connecting a lead frame to the substrate, and excluding a part of the lid member and a part of the lead frame, the substrate, the semiconductor chip, the chip-shaped electric component, and an underfill resin. And molding with a molding resin.
【００２３】以上のような構成によると、チップ状電気
部品が全体的に絶縁性のアンダーフィル樹脂に覆われて
いるので、チップ状電気部品同士またはチップ状電気部
品と半導体チップとの間で導電性接着樹脂を介して電気
的短絡を生じることが防げる。しかも、チップ状電気部
品がアンダーフィル樹脂により基板に強固に固定され、
リフロー時等に脱落するおそれがない。According to the above configuration, since the chip-like electric parts are entirely covered with the insulating underfill resin, the electric conduction between the chip-like electric parts or between the chip-like electric parts and the semiconductor chip is achieved. It is possible to prevent an electric short circuit from occurring through the conductive adhesive resin. In addition, the chip-shaped electric components are firmly fixed to the substrate by the underfill resin,
There is no risk of falling off during reflow.
【００２４】本発明の半導体装置の製造方法の他の特徴
は、半導体チップを基板上に取り付ける工程と、前記半
導体チップを取り囲む枠状の導電性の補強板に設けられ
ている、板厚方向に貫通する孔部内に、導電性接着樹脂
を充填させる工程と、絶縁性接着樹脂により、前記補強
板と前記基板とを接合し、絶縁性接着樹脂により、前記
補強板と、前記半導体チップから発生する熱を外に排出
する放熱板である導電性の蓋部材とを接合する工程とを
含み、前記孔部内に充填された導電性接着樹脂により、
前記蓋部材と前記補強板と前記基板とを導通させるとこ
ろにある。Another feature of the method of manufacturing a semiconductor device according to the present invention is that a step of mounting a semiconductor chip on a substrate and a step of mounting the semiconductor chip on a frame-shaped conductive reinforcing plate surrounding the semiconductor chip in a thickness direction of the board. A step of filling the penetrating hole with a conductive adhesive resin, bonding the reinforcing plate and the substrate with an insulating adhesive resin, and generating from the reinforcing plate and the semiconductor chip with the insulating adhesive resin. Joining a conductive lid member that is a heat sink that discharges heat to the outside, and a conductive adhesive resin filled in the hole,
The lid member, the reinforcing plate, and the substrate are electrically connected.
【００２５】このように導電性の蓋部材および補強板を
用いる構成であると、半導体チップおよびチップ状電気
部品を電磁的にシールドして、電磁波により外部への影
響を抑えることができる。With the configuration using the conductive lid member and the reinforcing plate as described above, the semiconductor chip and the chip-like electric component can be electromagnetically shielded, and the influence of the electromagnetic wave on the outside can be suppressed.
【００２６】[0026]
【発明の実施の形態】以下、本発明の実施形態について
図面を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００２７】図１〜３に、本発明の第１の実施形態の半
導体装置が示されている。まず、その構成について説明
する。基板１に図示しない導通パターンが形成してあ
り、この基板上にＬＳＩ等の半導体チップ２の一方の面
（図１において下方に位置する面）がフリップチップ実
装されている。具体的には、図２に拡大して示すよう
に、半導体チップ２に接続端子となる金属パッド３が設
けられ、さらにその上に高温ハンダ（約３４０度で溶
融）からなるハンダバンプ４が形成されている。一方、
このハンダバンプ４と対向する位置に、金属パッド５が
設けられ、その上に共晶ハンダ６（約２２０度で溶融）
が形成されている。この共晶ハンダ６がハンダバンプ４
を包み込むようにして固定している。また、この基板１
には、半導体チップ２の近傍に位置するように、チップ
抵抗やチップコンデンサー等のチップ状電気部品７が、
共晶ハンダ６で固定されている。FIGS. 1 to 3 show a semiconductor device according to a first embodiment of the present invention. First, the configuration will be described. A conductive pattern (not shown) is formed on a substrate 1, and one surface (a surface located below in FIG. 1) of a semiconductor chip 2 such as an LSI is flip-chip mounted on the substrate. More specifically, as shown in an enlarged manner in FIG. 2, a metal pad 3 serving as a connection terminal is provided on a semiconductor chip 2, and a solder bump 4 made of high-temperature solder (melted at about 340 degrees) is further formed thereon. ing. on the other hand,
A metal pad 5 is provided at a position facing the solder bump 4, and a eutectic solder 6 (fused at about 220 degrees) is provided thereon.
Are formed. This eutectic solder 6 is solder bump 4
It is fixed so that it wraps around. Also, this substrate 1
The chip-like electrical components 7 such as chip resistors and chip capacitors are located near the semiconductor chip 2.
It is fixed by eutectic solder 6.
【００２８】そして、基板１と半導体チップ２との間に
はエポキシ樹脂等の絶縁性のアンダーフィル樹脂８が注
入され、ハンダによる接続部以外の部分に充填されて固
化されている。このアンダーフィル樹脂８は、基板１と
半導体チップ２との間のみならず、チップ状電気部品７
全体を覆って基板１に固定するように設けられている。
すなわち、半導体チップ２の他方の面（図１において上
方に位置する面）を除く部分と、チップ状電気部品７の
全体が、アンダーフィル樹脂８に覆われている。An insulating underfill resin 8 such as an epoxy resin is injected between the substrate 1 and the semiconductor chip 2, and is filled and solidified in portions other than the connection portion by solder. The underfill resin 8 is used not only between the substrate 1 and the semiconductor chip 2, but also between the chip-like electric components 7.
It is provided so as to cover the whole and to be fixed to the substrate 1.
That is, the portion excluding the other surface of the semiconductor chip 2 (the surface located upward in FIG. 1) and the entire chip-shaped electric component 7 are covered with the underfill resin 8.
【００２９】基板１上には、半導体チップ２やチップ状
電気部品７が実装されている空間９を取り囲むように、
金属（銅など）からなる補強板１０が導電性接着樹脂１
１により取り付けられている。On the substrate 1, the semiconductor chip 2 and the chip-like electric component 7 are mounted so as to surround a space 9.
The reinforcing plate 10 made of metal (such as copper) is made of the conductive adhesive resin 1
1 attached.
【００３０】半導体チップ２の他方の面（図１において
上方に位置する面）には、銀ペーストなどの導電性接着
樹脂１２を介して銅板等からなる導電性の蓋部材１３が
固着されている。そして、補強板１０の上面も同様な導
電性接着樹脂１４により蓋部材と接着されている。A conductive lid member 13 made of a copper plate or the like is fixed to the other surface of the semiconductor chip 2 (a surface located upward in FIG. 1) via a conductive adhesive resin 12 such as a silver paste. . The upper surface of the reinforcing plate 10 is also bonded to the lid member by the same conductive adhesive resin 14.
【００３１】基板１の、半導体チップ２およびチップ状
電気部品７が形成されている面の反対側の面（図１にお
いて下方に位置する面）には、共晶ハンダからなるハン
ダボール１５が多数設けられている。図示しないが、こ
のハンダボール１５は、基板１の導通パターンからスル
ーホールや接続パターンを介して接続されており、他部
品との接続端子となるものである。A large number of solder balls 15 made of eutectic solder are provided on the surface of the substrate 1 opposite to the surface on which the semiconductor chip 2 and the chip-shaped electric component 7 are formed (the surface located below in FIG. 1). Is provided. Although not shown, the solder balls 15 are connected from the conduction pattern of the substrate 1 through through holes and connection patterns, and serve as connection terminals for other components.
【００３２】なお、本実施形態において、半導体チップ
２は一辺１３ｍｍの正方形であり、基板１と半導体チッ
プ２との間隔は約１５０μｍ、ハンダバンプ４のピッチ
は２４０μｍであり、１個の半導体チップ２に設けられ
たハンダバンプ４の数は３０００個である。In this embodiment, the semiconductor chip 2 is a square having a side of 13 mm, the interval between the substrate 1 and the semiconductor chip 2 is about 150 μm, the pitch of the solder bumps 4 is 240 μm, and one semiconductor chip 2 The number of solder bumps 4 provided is 3000.
【００３３】本実施形態はこのような構成であり、チッ
プ状電気部品７が全体的に絶縁性のアンダーフィル樹脂
８に覆われているので、当然その電極が導電性接着樹脂
１２と接触することはない。従って、チップ状電気部品
７同士、またチップ状電気部品７と半導体チップ２との
間で、導電性接着樹脂１２を介して電気的短絡を生じる
ことはなく、半導体装置の動作に支障をきたすことはな
い。しかも、チップ状電気部品７および半導体チップ２
は、共晶ハンダ６により基板１と接続されるのみなら
ず、アンダーフィル樹脂８により基板に固定される構成
であるので、リフロー時等にチップ状電気部品７が脱落
したり位置が狂ったりすることなく、固定の信頼性が高
い。In this embodiment, the chip-shaped electric component 7 is entirely covered with the insulating underfill resin 8, so that its electrodes come into contact with the conductive adhesive resin 12. There is no. Accordingly, no electrical short circuit occurs between the chip-shaped electric components 7 or between the chip-shaped electric component 7 and the semiconductor chip 2 via the conductive adhesive resin 12, which hinders the operation of the semiconductor device. There is no. Moreover, the chip-shaped electric component 7 and the semiconductor chip 2
Is not only connected to the substrate 1 by the eutectic solder 6 but also fixed to the substrate by the underfill resin 8, so that the chip-shaped electric components 7 fall off or become misaligned during reflow or the like. Without the high reliability of fixing.
【００３４】半導体チップ２の他方の面（図１において
上方に位置する面）では、酸化膜が剥離されシリコンが
露出されたり、金属膜（バックメタル）が形成されるな
どして、少なくとも一部が導電性となっている。そし
て、この面が導電性接着樹脂１２を介して導電性の蓋部
材１３と接続されており、この蓋部材１３がグランド電
位の接地端子として機能している。On the other surface of the semiconductor chip 2 (the surface located upward in FIG. 1), at least a portion is formed by exfoliating the oxide film to expose silicon or forming a metal film (back metal). Are conductive. This surface is connected to the conductive lid member 13 via the conductive adhesive resin 12, and the lid member 13 functions as a ground terminal for ground potential.
【００３５】また、導電性接着樹脂１１，１４および補
強板１０および蓋部材１３により半導体チップ２および
チップ状電気部品７の存在する空間９が囲まれて電磁的
にシールドされた状態となるので、半導体チップ２の動
作時に発生する電磁波が、外部部品等に影響を及ぼすこ
とがない。Further, since the space 9 where the semiconductor chip 2 and the chip-shaped electric component 7 are present is surrounded by the conductive adhesive resins 11 and 14, the reinforcing plate 10 and the cover member 13, and is electromagnetically shielded. Electromagnetic waves generated during the operation of the semiconductor chip 2 do not affect external components and the like.
【００３６】次に、この半導体装置の製造方法について
簡単に説明する。Next, a method of manufacturing the semiconductor device will be briefly described.
【００３７】まず、図４に示すように、所望の大きさの
矩形状の補強板１０が導電性接着樹脂１１により取り付
けられた基板１を用意する。そして、図５に示すよう
に、この補強板に囲まれた空間９内に半導体チップ２を
フリップチップ実装するとともに、この空間９内にチッ
プ状電気部品７を取り付ける。First, as shown in FIG. 4, a substrate 1 on which a rectangular reinforcing plate 10 of a desired size is attached by a conductive adhesive resin 11 is prepared. Then, as shown in FIG. 5, the semiconductor chip 2 is flip-chip mounted in the space 9 surrounded by the reinforcing plate, and the chip-shaped electric component 7 is mounted in the space 9.
【００３８】そこで、図６に示すように、基板１と半導
体チップ２との間に充填するように、かつチップ状電気
部品７の全体を覆うように、アンダーフィル樹脂８を注
入し固化する。Therefore, as shown in FIG. 6, an underfill resin 8 is injected and solidified so as to fill the space between the substrate 1 and the semiconductor chip 2 and to cover the entire chip-shaped electric component 7.
【００３９】それから、図７に示すように、半導体チッ
プ２上に導電性接着樹脂１２を、補強板１０上に導電性
接着樹脂１４をそれぞれ塗布し、この導電性接着樹脂１
２，１４により蓋部材１３を固着する。Then, as shown in FIG. 7, a conductive adhesive resin 12 is applied on the semiconductor chip 2 and a conductive adhesive resin 14 is applied on the reinforcing plate 10, respectively.
The cover member 13 is fixed by 2 and 14.
【００４０】最後に、基板１の、半導体チップ２および
チップ状電気部品７が形成されている面の反対側の面
に、共晶ハンダからなる多数のハンダボール１５を設け
て、図１に示すＢＧＡ（Ball Grid Array）パッケージ
構造の半導体装置を完成させる。なお、この半導体装置
を外部基板等に取り付ける場合は、ハンダボール１５を
用いて電気的接続と機械的固定とを同時に行なう。Finally, a large number of solder balls 15 made of eutectic solder are provided on the surface of the substrate 1 opposite to the surface on which the semiconductor chip 2 and the chip-shaped electric component 7 are formed, as shown in FIG. A semiconductor device having a BGA (Ball Grid Array) package structure is completed. When the semiconductor device is mounted on an external substrate or the like, the electrical connection and the mechanical fixing are performed simultaneously using the solder balls 15.
【００４１】次に、本発明の第２の実施形態の半導体装
置について図８を参照して説明する。なお、第１の実施
形態と同じ構成の部分については同一の符号を付与し、
説明を省略する。Next, a semiconductor device according to a second embodiment of the present invention will be described with reference to FIG. The same components as those in the first embodiment are denoted by the same reference numerals,
Description is omitted.
【００４２】本実施形態は、マルチチップモジュール
（ＭＣＭ）型の半導体装置であり、空間９内に複数の半
導体チップ２が実装されており、それぞれに対応して、
チップ状電気部品７が取り付けられている。それ以外の
構成は、第１の実施形態と同様である。This embodiment is a semiconductor device of a multi-chip module (MCM) type, in which a plurality of semiconductor chips 2 are mounted in a space 9,
A chip-shaped electric component 7 is attached. Other configurations are the same as those of the first embodiment.
【００４３】次に、本発明の第３の実施形態の半導体装
置について図９を参照して説明する。なお、第１の実施
形態と同じ構成の部分については同一の符号を付与し、
説明を省略する。Next, a semiconductor device according to a third embodiment of the present invention will be described with reference to FIG. The same components as those in the first embodiment are denoted by the same reference numerals,
Description is omitted.
【００４４】本実施形態は、第１の実施形態のようなＢ
ＧＡパッケージ構造ではなく、モールドタイプの半導体
装置である。基板１上に半導体チップ２がフリップチッ
プ実装され、その近傍にチップ状電気部品７が取り付け
られ、アンダーフィル樹脂８により覆われている。半導
体チップ２には、導電性接着樹脂１２を介して蓋部材１
３が固着されている。基板１の、半導体チップ２および
チップ状電気部品７が形成されている面の反対側の面
に、金属製リードフレーム１６が取り付けられ、ワイヤ
ーボンディングにより基板１の図示しない導通パターン
と接続されている。それから、基板１、半導体チップ
２、チップ状電気部品７、アンダーフィル樹脂８を全体
的に覆うように、モールド樹脂１７によりモールドされ
ている。この時、蓋部材１３の上面とリードフレーム１
６の一部のみは外部に露出している。本実施形態では、
第１の実施形態のような補強板１０およびハンダボール
１５は設けられていない。In the present embodiment, B as in the first embodiment is used.
It is not a GA package structure but a mold type semiconductor device. A semiconductor chip 2 is flip-chip mounted on a substrate 1, and a chip-shaped electric component 7 is attached in the vicinity thereof, and is covered with an underfill resin 8. The lid member 1 is attached to the semiconductor chip 2 via a conductive adhesive resin 12.
3 is fixed. A metal lead frame 16 is attached to a surface of the substrate 1 opposite to a surface on which the semiconductor chip 2 and the chip-shaped electric component 7 are formed, and is connected to a conductive pattern (not shown) of the substrate 1 by wire bonding. . Then, the substrate 1, the semiconductor chip 2, the chip-shaped electric component 7, and the underfill resin 8 are molded with a mold resin 17 so as to entirely cover the underfill resin 8. At this time, the upper surface of the lid member 13 and the lead frame 1
Only part of 6 is exposed to the outside. In this embodiment,
The reinforcing plate 10 and the solder balls 15 as in the first embodiment are not provided.
【００４５】本実施形態の半導体装置を外部基板等に取
り付ける場合は、リードフレーム１６の、モールド樹脂
１７の外部に突出している部分を外部基板等に接続する
ことにより、電気的接続と機械的固定とを行なう。When the semiconductor device of the present embodiment is mounted on an external substrate or the like, the portion of the lead frame 16 protruding outside the mold resin 17 is connected to the external substrate or the like to provide electrical connection and mechanical fixing. And
【００４６】次に、本発明の第４の実施形態の半導体装
置について図１０を参照して説明する。なお、第１の実
施形態と同じ構成の部分については同一の符号を付与
し、説明を省略する。Next, a semiconductor device according to a fourth embodiment of the present invention will be described with reference to FIG. Note that the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
【００４７】本実施形態は、第１の実施形態のようなＢ
ＧＡパッケージ構造ではなく、ＬＧＡ（Land Grid Arra
y）パッケージ構造の半導体装置である。本実施形態で
は、第１の実施形態におけるハンダボール１５が設けら
れていない。本実施形態の半導体装置を外部基板１８に
取り付ける場合は、外部基板１８にソケット１９を設け
ておき、基板１に設けられているパッド状の端子２０と
ソケット１９内に設けられている端子２１とを接触させ
た状態で、加圧部材２１により両端子２０，２１を圧接
させ、基板１と外部基板１８とを互いに固定させてい
る。In the present embodiment, B as in the first embodiment is used.
Instead of GA package structure, LGA (Land Grid Arra
y) A semiconductor device having a package structure. In the present embodiment, the solder balls 15 of the first embodiment are not provided. When the semiconductor device of the present embodiment is mounted on the external substrate 18, a socket 19 is provided on the external substrate 18, and a pad-shaped terminal 20 provided on the substrate 1 and a terminal 21 provided in the socket 19 are provided. The terminals 1 and 2 are pressed against each other by the pressing member 21 in a state in which the substrate 1 and the external substrate 18 are fixed to each other.
【００４８】次に、本発明の第５の実施形態の半導体装
置について図１１を参照して説明する。なお、第１の実
施形態と同じ構成の部分については同一の符号を付与
し、説明を省略する。Next, a semiconductor device according to a fifth embodiment of the present invention will be described with reference to FIG. Note that the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof will be omitted.
【００４９】本実施形態では、半導体チップ２に導電性
接着樹脂１２を介して、蓋部材としてフィン付蓋部材２
２を固着させている。これにより放熱効果を高めてい
る。なお、第２〜４の実施形態と同様な構成において
も、蓋部材としてフィン付蓋部材２２を用いることによ
り放熱効果を高めることができる。In this embodiment, the finned lid member 2 is provided on the semiconductor chip 2 via the conductive adhesive resin 12 as a lid member.
2 is fixed. This enhances the heat dissipation effect. In the same configuration as the second to fourth embodiments, the heat radiation effect can be enhanced by using the finned lid member 22 as the lid member.
【００５０】次に、本発明の第６の実施形態の半導体装
置について図１２〜１４を参照して説明する。Next, a semiconductor device according to a sixth embodiment of the present invention will be described with reference to FIGS.
【００５１】第１〜５の実施形態と同様に、配線パター
ンが形成された基板１上に半導体チップ２が実装され、
その周囲にチップ状電気部品７が実装されている。この
基板１上に、半導体チップ２およびチップ状電気部品７
を取り囲む枠状の補強板４４が絶縁性接着樹脂４７によ
り接合されている。補強板４４には、板厚方向に貫通す
る孔部４５が設けられている。この孔部４５内に、導電
性接着樹脂４６が充填されている。導電性接着樹脂４６
は、孔部４５から溢れる程度に注入され、上部にはみ出
した状態にある。それから、図１４に示すように、半導
体チップ２から発生する熱を外に排出する放熱板である
蓋部材１３が、補強板４４の上に絶縁性接着樹脂４７に
より接合されている。As in the first to fifth embodiments, a semiconductor chip 2 is mounted on a substrate 1 on which a wiring pattern is formed.
A chip-shaped electric component 7 is mounted around the periphery. On this substrate 1, a semiconductor chip 2 and a chip-like electric component 7 are provided.
Are joined by an insulating adhesive resin 47. The reinforcing plate 44 is provided with a hole 45 penetrating in the thickness direction. The hole 45 is filled with a conductive adhesive resin 46. Conductive adhesive resin 46
Is injected to the extent that it overflows from the hole 45 and protrudes upward. Then, as shown in FIG. 14, the lid member 13 which is a heat radiating plate for discharging heat generated from the semiconductor chip 2 to the outside is joined to the reinforcing plate 44 by an insulating adhesive resin 47.
【００５２】補強板４４および蓋部材１３は導電性の材
料からなる。孔部４５は、基板１に設けられた配線パタ
ーンのうちのグランド電位のコンタクト電極４８に対向
する位置に設けられている。従って、基板１のコンタク
ト電極４８、導電性接着樹脂４６、蓋部材１３の間で電
気的導通がとられ、半導体チップ２およびチップ状電気
部品７は電磁的にシールドされる。The reinforcing plate 44 and the lid member 13 are made of a conductive material. The hole portion 45 is provided at a position of the wiring pattern provided on the substrate 1, the position facing the contact electrode 48 of the ground potential. Accordingly, electrical continuity is established between the contact electrode 48, the conductive adhesive resin 46, and the lid member 13 of the substrate 1, and the semiconductor chip 2 and the chip-shaped electric component 7 are electromagnetically shielded.
【００５３】なお、絶縁性接着樹脂４７は、あらかじめ
枠状の補強板４４の形状に合わせて形成しておくことが
望ましい。そして、絶縁性接着樹脂４７は、基板に形成
された配線パターンのグランド電位のコンタクト電極４
８を覆わないように、かつ孔部４５を塞がないように形
成されている。導電性接着樹脂４６は、図１３に示すよ
うに、補強板４４上端面に、孔部４５を通る直線状に塗
布されることが好ましいが、必ずしもこの塗布方法に限
定されるものではない。It is desirable that the insulating adhesive resin 47 is formed in advance according to the shape of the frame-shaped reinforcing plate 44. Then, the insulating adhesive resin 47 is used as the contact electrode 4 of the ground potential of the wiring pattern formed on the substrate.
8 is formed so as not to cover and not to block the hole 45. The conductive adhesive resin 46 is preferably applied to the upper end surface of the reinforcing plate 44 in a straight line passing through the hole 45 as shown in FIG. 13, but is not necessarily limited to this application method.
【００５４】ここでは詳述しないが、半導体チップ２お
よびチップ状電気部品７の基板１への実装方法や、アン
ダーフィル樹脂８を用いた固定方法等については、第１
〜４の実施形態のいずれかと同様な方法で同様な構成と
してもよい。Although not described in detail here, the method of mounting the semiconductor chip 2 and the chip-like electric component 7 on the substrate 1 and the method of fixing the semiconductor chip 2 and the chip-like electric component 7 using the underfill resin 8 are the first.
A similar configuration may be employed in a similar manner to any of the fourth to fourth embodiments.
【００５５】従来は、導電性接着樹脂を用いて基板と補
強板と接着し、その後補強板と蓋部材とを接着してい
た。しかし、導電性接着樹脂の接着強度は１０〜２０ｋ
ｇｆ／ｃｍ2程度なので、導電性接着樹脂のみでは接着
の信頼性が乏しい。そこで、ある程度高い接着強度を必
要とする場合には、１００ｋｇｆ／ｃｍ2以上の接着強
度を有する絶縁性接着樹脂で数ヶ所を固定し、その後導
電性接着樹脂で導通をとる構成とする。この場合、基板
と補強板との間の導通をとる工程と、補強板と蓋部材と
の間の導通をとる工程との２つの工程を必要とし、さら
に導電性接着樹脂の流れ出しにより実装された素子（半
導体チップやチップ状電気部品）間および電極間でショ
ートする可能性がある。Conventionally, the substrate and the reinforcing plate were bonded using a conductive adhesive resin, and then the reinforcing plate and the lid member were bonded. However, the adhesive strength of the conductive adhesive resin is 10 to 20 k.
Since it is about gf / cm 2, the reliability of adhesion is poor only with the conductive adhesive resin. Therefore, when a relatively high adhesive strength is required, several places are fixed with an insulating adhesive resin having an adhesive strength of 100 kgf / cm 2 or more, and thereafter, conduction is established with a conductive adhesive resin. In this case, two steps of a step of establishing conduction between the substrate and the reinforcing plate and a step of establishing conduction between the reinforcing plate and the lid member are required, and furthermore, mounting is performed by flowing out the conductive adhesive resin. There is a possibility that a short circuit occurs between elements (semiconductor chips or chip-like electric components) and between electrodes.
【００５６】そこで本実施形態では、補強板を貫通する
孔部に導電性接着樹脂を充填することにより、基板−補
強板−蓋部材の三者の導通をとることができるため、工
程数が削減でき、かつ導電性接着樹脂の流れ出しによる
素子間および電極間でのショートを容易に防ぐことが出
来る。Therefore, in this embodiment, by filling the hole penetrating through the reinforcing plate with a conductive adhesive resin, the conduction between the substrate, the reinforcing plate, and the lid member can be established, thereby reducing the number of steps. In addition, a short circuit between the elements and between the electrodes due to the flow of the conductive adhesive resin can be easily prevented.
【００５７】次に、本発明の第７の実施形態の半導体装
置について図１５を参照して説明する。なお、前記の各
実施形態との相違点のみについて説明し、それ以外の部
分の構成についての説明は省略する。Next, a semiconductor device according to a seventh embodiment of the present invention will be described with reference to FIG. Only the differences from the above embodiments will be described, and the description of the configuration of the other parts will be omitted.
【００５８】図１５に示すように、半導体チップ２およ
びチップ状電気部品７が実装された基板１上に、補強板
５０が接合されている。この補強板５０は、半導体チッ
プ２およびチップ状電気部品７を取り囲む枠状をなして
おり、半導体チップ２およびチップ状電気部品７が配設
された領域の全体の外形に沿うような、細かい凹凸を有
する形状をしている。As shown in FIG. 15, a reinforcing plate 50 is joined to the substrate 1 on which the semiconductor chip 2 and the chip-shaped electric components 7 are mounted. The reinforcing plate 50 has a frame shape surrounding the semiconductor chip 2 and the chip-shaped electric component 7, and has fine irregularities along the entire outer shape of a region where the semiconductor chip 2 and the chip-shaped electric component 7 are provided. It has a shape having.
【００５９】ここでは詳述しないが、半導体チップ２お
よびチップ状電気部品７の基板１への実装方法や、アン
ダーフィル樹脂８を用いた固定方法等については、第１
〜４の実施形態のいずれかと同じ方法で同じ構成として
もよい。また、半導体チップ２およびチップ状電気部品
７を電磁的にシールドするために、第５の実施形態と同
様な孔部４５および導電性接着樹脂４６を有する構成と
してもよい。Although not described in detail here, the method of mounting the semiconductor chip 2 and the chip-shaped electric component 7 on the substrate 1 and the method of fixing using the underfill resin 8 are the first.
The same configuration as in any one of the fourth to fourth embodiments may be adopted. Further, in order to electromagnetically shield the semiconductor chip 2 and the chip-shaped electric component 7, a configuration having a hole 45 and a conductive adhesive resin 46 similar to the fifth embodiment may be adopted.
【００６０】本実施形態によると、補強板５０の内側
が、半導体チップ２およびチップ状電気部品７が搭載さ
れている領域にそった形状となるように形成することに
より、半導体パッケージの反りを矯正できる。特に、半
導体チップ２またはチップ状電気部品７と補強板５０と
の間の隙間が５ｍｍ以上開くことがないように設計する
ことが好ましい。According to the present embodiment, the warping of the semiconductor package is corrected by forming the inside of the reinforcing plate 50 along the region where the semiconductor chip 2 and the chip-shaped electric component 7 are mounted. it can. In particular, it is preferable to design so that the gap between the semiconductor chip 2 or the chip-shaped electric component 7 and the reinforcing plate 50 does not open more than 5 mm.
【００６１】従来、素子（半導体チップやチップ状電気
部品）実装時と常温時では、その熱膨張係数の違いから
半導体パッケージ自体が反ってしまう。特に厚さ０．６
ｍｍ以下の薄い多層配線基板は、外部からの曲げの力に
弱く、厚さ０．６ｍｍより厚い（例えば１．２ｍｍ）の
基板に比べより大きく曲がるので、補強板でその形状を
維持する必要がある。しかしながら、実装されている半
導体チップおよびチップ状電気部品と補強板の間の平面
的な間隔が５ｍｍ以上になると、その効果が薄れてしま
い、補強板をもたない場合と同程度の反りを生じてしま
う。そこで間隔が５ｍｍ以上あくような場合、補強板の
内側を半導体チップおよびチップ状電気部品が搭載され
ている領域の外形に沿った形状に形成し、この補強板を
貼り付けることにより、半導体パッケージの反りを抑え
ることができる。また、半導体パッケージに占める補強
板の面積が増えるため半導体パッケージ自体の強度が向
上する。Conventionally, the semiconductor package itself warps due to the difference in the coefficient of thermal expansion between the time of mounting an element (semiconductor chip or chip-like electric component) and the time of normal temperature. Especially thickness 0.6
The thin multi-layer wiring board having a thickness of less than 0.3 mm is weak against external bending force and bends more than a board having a thickness of more than 0.6 mm (for example, 1.2 mm). Therefore, it is necessary to maintain the shape with a reinforcing plate. is there. However, when the planar distance between the mounted semiconductor chip and the chip-shaped electric component and the reinforcing plate is 5 mm or more, the effect is diminished, and the same level of warpage as when there is no reinforcing plate is generated. . Therefore, when the gap is 5 mm or more, the inside of the reinforcing plate is formed into a shape along the outer shape of the region where the semiconductor chip and the chip-shaped electric component are mounted, and the reinforcing plate is attached, so that the semiconductor package is formed. Warpage can be suppressed. Further, since the area of the reinforcing plate occupying the semiconductor package increases, the strength of the semiconductor package itself improves.
【００６２】[0062]
【発明の効果】本発明によると、チップ状電気部品が全
体的に絶縁性のアンダーフィル樹脂に覆われているの
で、チップ状電気部品同士またはチップ状電気部品と半
導体チップとの間で、導電性接着樹脂を介して電気的短
絡を生じることはなく、半導体装置の動作に支障をきた
すことはない。しかも、チップ状電気部品および半導体
チップは、アンダーフィル樹脂により基板に強固に固定
され、リフロー時等にチップ状電気部品が脱落するおそ
れがない。According to the present invention, since the chip-like electric parts are entirely covered with the insulating underfill resin, the electric conduction between the chip-like electric parts or between the chip-like electric parts and the semiconductor chip is prevented. No electrical short circuit occurs through the conductive adhesive resin, and the operation of the semiconductor device is not hindered. In addition, the chip-shaped electric component and the semiconductor chip are firmly fixed to the substrate by the underfill resin, and there is no possibility that the chip-shaped electric component falls off during reflow or the like.
【００６３】蓋部材はグランド電位の接地端子となると
ともに、導電性の蓋部材および補強板を用いる場合、半
導体チップおよびチップ状電気部品が電磁的にシールド
された状態となるので、半導体チップの動作時に発生す
る電磁波が、外部部品等に影響を及ぼすことがない。The lid member serves as a ground terminal for ground potential, and when a conductive lid member and a reinforcing plate are used, the semiconductor chip and the chip-shaped electric components are in an electromagnetically shielded state. Electromagnetic waves that are sometimes generated do not affect external components and the like.
【００６４】補強板を貫通する孔部に導電性接着樹脂を
充填する構成とすると、基板と補強板と蓋部材とを容易
に導通させることができる。When the hole penetrating the reinforcing plate is filled with a conductive adhesive resin, the substrate, the reinforcing plate, and the lid member can be easily conducted.
【００６５】また、補強板を半導体チップおよびチップ
状電気部品が搭載されている領域の外形に沿った形状に
形成すると、半導体装置の強度が向上する。Further, when the reinforcing plate is formed in a shape along the outer shape of the region where the semiconductor chip and the chip-shaped electric component are mounted, the strength of the semiconductor device is improved.
【図１】本発明の第１の実施形態の半導体装置の断面図
である。FIG. 1 is a sectional view of a semiconductor device according to a first embodiment of the present invention.
【図２】図１の要部拡大断面図である。FIG. 2 is an enlarged sectional view of a main part of FIG.
【図３】図１に示す半導体装置の蓋部材および導電性接
着樹脂およびアンダーフィル樹脂を一部切り欠いた平面
図である。FIG. 3 is a plan view of the semiconductor device shown in FIG. 1 with a lid member, a conductive adhesive resin, and an underfill resin partially cut away.
【図４】図１に示す半導体装置の補強板が設けられた基
板の断面図である。FIG. 4 is a sectional view of a substrate provided with a reinforcing plate of the semiconductor device shown in FIG. 1;
【図５】図１に示す半導体装置の製造方法の半導体チッ
プおよびチップ状部品の取付工程を示す断面図である。FIG. 5 is a cross-sectional view showing a step of attaching a semiconductor chip and a chip-shaped part in the method of manufacturing the semiconductor device shown in FIG. 1;
【図６】図１に示す半導体装置の製造方法のアンダーフ
ィル樹脂注入工程を示す断面図である。FIG. 6 is a cross-sectional view showing an underfill resin injecting step of the method for manufacturing the semiconductor device shown in FIG. 1;
【図７】図１に示す半導体装置の製造方法の導電性接着
樹脂塗布工程を示す断面図である。7 is a cross-sectional view showing a step of applying a conductive adhesive resin in the method of manufacturing the semiconductor device shown in FIG.
【図８】本発明の第２の実施形態の半導体装置の断面図
である。FIG. 8 is a sectional view of a semiconductor device according to a second embodiment of the present invention.
【図９】本発明の第３の実施形態の半導体装置の断面図
である。FIG. 9 is a sectional view of a semiconductor device according to a third embodiment of the present invention.
【図１０】本発明の第４の実施形態の半導体装置の断面
図である。FIG. 10 is a sectional view of a semiconductor device according to a fourth embodiment of the present invention.
【図１１】本発明の第５の実施形態の半導体装置の断面
図である。FIG. 11 is a sectional view of a semiconductor device according to a fifth embodiment of the present invention.
【図１２】本発明の第６の実施形態の半導体装置の蓋部
材接合前の要部分解斜視図である。FIG. 12 is an exploded perspective view of a main part of a semiconductor device according to a sixth embodiment of the present invention before a lid member is joined.
【図１３】本発明の第６の実施形態の半導体装置の蓋部
材接合前の要部断面図である。FIG. 13 is a sectional view of a main part of a semiconductor device according to a sixth embodiment of the present invention before a lid member is joined.
【図１４】本発明の第６の実施形態の半導体装置の蓋部
材接合後の要部断面図である。FIG. 14 is a sectional view of a principal part of a semiconductor device according to a sixth embodiment of the present invention after a lid member is joined.
【図１５】本発明の第７の実施形態の半導体装置の蓋部
材接合前の平面図である。FIG. 15 is a plan view of a semiconductor device according to a seventh embodiment of the present invention before a lid member is joined.
【図１６】従来の半導体装置の断面図である。FIG. 16 is a sectional view of a conventional semiconductor device.
【図１７】従来の半導体装置の電気的短絡状態を示す断
面図である。FIG. 17 is a cross-sectional view showing an electrical short-circuit state of a conventional semiconductor device.
１ 基板 ２ 半導体チップ ３ 金属パッド ４ ハンダバンプ ５ 金属パッド ６ 共晶ハンダ ７ チップ状電気部品 ８ アンダーフィル樹脂 ９ 空間 １０ 補強板 １１，１２，１４ 導電性接着樹脂 １３ 蓋部材 １５ ハンダボール １６ リードフレーム １７ モールド樹脂 １８ 外部基板 １９ ソケット ２０，２１ 端子 ２２ フィン付蓋部材 ３１ 基板 ３２ 半導体チップ ３３ ハンダ ３４ チップ状電気部品 ３５ ハンダ ３６ アンダーフィル樹脂 ３７ ハンダボール ３８ 導電性接着樹脂 ３９ 蓋部材 ４０ 補強板 ４１ 導電性接着樹脂 ４２ 空間 ４４ 補強板 ４５ 孔部 ４６ 導電性接着樹脂 ４７ 絶縁性接着樹脂 ４８ コンタクト電極 ５０ 補強板 DESCRIPTION OF SYMBOLS 1 Substrate 2 Semiconductor chip 3 Metal pad 4 Solder bump 5 Metal pad 6 Eutectic solder 7 Chip-shaped electric component 8 Underfill resin 9 Space 10 Reinforcement plate 11, 12, 14 Conductive adhesive resin 13 Cover member 15 Solder ball 16 Lead frame 17 Mold resin 18 External board 19 Socket 20 and 21 Terminal 22 Finned lid member 31 Substrate 32 Semiconductor chip 33 Solder 34 Chip-shaped electrical component 35 Solder 36 Underfill resin 37 Solder ball 38 Conductive adhesive resin 39 Cover member 40 Reinforcement plate 41 Conductive Adhesive resin 42 space 44 reinforcing plate 45 hole 46 conductive adhesive resin 47 insulating adhesive resin 48 contact electrode 50 reinforcing plate
Claims (20)
されている半導体チップと、 前記基板上であって前記半導体チップの近傍に取り付け
られているチップ状電気部品と、 前記チップ状電気部品の全体を覆うとともに前記半導体
チップの前記一方の面と前記基板との間を埋めている絶
縁性のアンダーフィル樹脂と、 前記半導体チップの他方の面に、導電性接着樹脂を介し
て固着されている蓋部材とを有する半導体装置。1. A semiconductor chip having one surface flip-chip connected to a substrate; a chip-shaped electric component mounted on the substrate near the semiconductor chip; An insulating underfill resin that covers the entire surface and fills the space between the one surface of the semiconductor chip and the substrate; and is fixed to the other surface of the semiconductor chip via a conductive adhesive resin. A semiconductor device having a lid member.
気部品と前記基板とは、ハンダを介して電気的接続がと
られた上で、前記ハンダによる接続部以外の部分に充填
された前記アンダーフィル樹脂により互いに固着されて
いる請求項1に記載の半導体装置。2. The underfill resin, wherein the semiconductor chip, the chip-shaped electric component, and the substrate are electrically connected to each other via solder, and then filled in a portion other than a connection portion by the solder. 2. The semiconductor device according to claim 1, wherein the semiconductor devices are fixed to each other by a stick.
性を有する請求項１または２に記載の半導体装置。3. The semiconductor device according to claim 1, wherein said other surface of said semiconductor chip has conductivity.
補強板を有する請求項１または２に記載の半導体装置。4. The semiconductor device according to claim 1, further comprising a reinforcing plate interposed between said lid member and said substrate.
前記チップ状電気部品が設けられている空間の周囲を取
り囲むように設けられている請求項４に記載の半導体装
置。5. The semiconductor device according to claim 4, wherein the reinforcing plate is provided so as to surround a space in which the semiconductor chip and the chip-shaped electric component are provided.
有するとともに導電性接着樹脂にて接着されており、前
記半導体チップを電磁的にシールドする請求項５に記載
の半導体装置。6. The semiconductor device according to claim 5, wherein the lid member and the reinforcing plate have conductivity and are bonded with a conductive adhesive resin, and electromagnetically shield the semiconductor chip.
記チップ状電気部品が接続されている面と反対側の面
に、複数のハンダボールが設けられて、ＢＧＡ（Ball G
rid Array）パッケージ構造となっている請求項１〜６
のいずれか１項に記載の半導体装置。7. A plurality of solder balls are provided on a surface of the substrate opposite to a surface to which the semiconductor chip and the chip-shaped electric component are connected, and a BGA (Ball G
rid Array) package structure.
The semiconductor device according to claim 1.
前記半導体チップと前記チップ状電気部品とアンダーフ
ィル樹脂とをモールドするモールド樹脂と、前記基板に
接続され前記モールド樹脂の外部へ突出するリードフレ
ームを有する請求項１〜６のいずれか１項に記載の半導
体装置。8. A molding resin for molding the substrate, the semiconductor chip, the chip-shaped electric component, and an underfill resin except for a part of the lid member, and a molding resin connected to the substrate and out of the molding resin. The semiconductor device according to claim 1, further comprising a protruding lead frame.
基板に取り付けられている、前記半導体チップを取り囲
む枠状の導電性の補強板と、前記補強板上に取り付けら
れ前記半導体チップから発生する熱を外に排出する放熱
板である導電性の蓋部材とを有し、 前記補強板には板厚方向に貫通する孔部が設けられてお
り、該孔部に充填されている導電性接着樹脂により、前
記基板と前記補強板と前記蓋部材とが導通している半導
体装置。9. A substrate on which a semiconductor chip is mounted, a frame-shaped conductive reinforcing plate attached to the substrate and surrounding the semiconductor chip, and generated from the semiconductor chip mounted on the reinforcing plate. A conductive lid member which is a heat radiating plate for discharging heat, wherein the reinforcing plate is provided with a hole penetrating in a plate thickness direction, and the conductive adhesive filled in the hole is provided. A semiconductor device in which the substrate, the reinforcing plate, and the lid member are electrically connected by resin.
半導体チップを取り囲む枠状の導電性の補強板と、前記
補強板上に取り付けられ前記半導体チップから発生する
熱を外に排出する放熱板である導電性の蓋部材とを有
し、 前記補強板には板厚方向に貫通する孔部が設けられてお
り、該孔部に充填されている導電性接着樹脂により、前
記基板と前記補強板と前記蓋部材とが導通している請求
項１〜８のいずれか１項に記載の半導体装置。10. A frame-shaped conductive reinforcing plate surrounding the semiconductor chip attached to the substrate, and a heat radiating plate attached to the reinforcing plate and discharging heat generated from the semiconductor chip to the outside. A hole that penetrates in the thickness direction of the reinforcing plate, and the substrate and the reinforcing plate are formed by a conductive adhesive resin filled in the hole. The semiconductor device according to any one of claims 1 to 8, wherein the semiconductor device is electrically connected to the lid member.
記基板上であって前記半導体チップの近傍に取り付けら
れているチップ状電気部品と、前記基板に取り付けられ
ている補強板と、前記補強板上に取り付けられ前記半導
体チップから発生する熱を外に排出する放熱板である蓋
部材とを有し、 前記補強板が、前記半導体チップおよび前記チップ状部
品が設けられた領域の外形に沿って前記半導体チップお
よび前記チップ状部品を取り囲む枠状に形成されている
半導体装置。11. A substrate on which a semiconductor chip is mounted, a chip-shaped electric component mounted on the substrate near the semiconductor chip, a reinforcing plate mounted on the substrate, and the reinforcing plate A lid member that is mounted on the heat dissipation plate and discharges heat generated from the semiconductor chip to the outside, wherein the reinforcing plate extends along an outer shape of a region where the semiconductor chip and the chip-shaped component are provided. A semiconductor device formed in a frame shape surrounding the semiconductor chip and the chip-shaped component.
と、前記補強板上に取り付けられ前記半導体チップから
発生する熱を外に排出する放熱板である蓋部材とを有
し、 前記補強板が、前記半導体チップおよび前記チップ状部
品が設けられた領域の外形に沿って前記半導体チップお
よび前記チップ状部品を取り囲む枠状に形成されている
請求項１〜１０のいずれか１項に記載の半導体装置。12. A reinforcing plate, comprising: a reinforcing plate attached to the substrate; and a lid member serving as a heat radiating plate attached to the reinforcing plate and discharging heat generated from the semiconductor chip to the outside, wherein the reinforcing plate is The semiconductor according to any one of claims 1 to 10, wherein the semiconductor is formed in a frame shape surrounding the semiconductor chip and the chip-shaped component along an outer shape of a region where the semiconductor chip and the chip-shaped component are provided. apparatus.
プの一方の面を基板上に取り付ける工程と、 前記基板上であって前記半導体チップの近傍にチップ状
電気部品を取り付ける工程と、 前記チップ状電気部品の全体を覆うとともに前記半導体
チップの前記一方の面と前記基板との間を埋めるように
絶縁性のアンダーフィル樹脂を注入し固化する工程と、 前記半導体チップの他方の面に導電性接着樹脂を塗布す
る工程と、 前記導電性接着樹脂を介して前記半導体チップの前記他
方の面に蓋部材を固着する工程とを含む半導体装置の製
造方法。13. A step of mounting one surface of a semiconductor chip on a substrate by flip-chip connection; a step of mounting a chip-shaped electric component on the substrate and in the vicinity of the semiconductor chip; Injecting and solidifying an insulating underfill resin so as to cover the entire surface and fill the space between the one surface of the semiconductor chip and the substrate; and applying a conductive adhesive resin to the other surface of the semiconductor chip. And a step of fixing a lid member to the other surface of the semiconductor chip via the conductive adhesive resin.
て、前記半導体チップの前記一方の面と前記基板とをハ
ンダにより電気的に接続し、前記チップ状電気部品の取
り付け工程にて、前記チップ状電気部品と前記基板とを
ハンダにより電気的に接続する請求項１３に記載の半導
体装置の製造方法。14. The step of attaching the semiconductor chip, the one surface of the semiconductor chip and the substrate are electrically connected by solder, and the step of attaching the chip-like electric component comprises the step of attaching the chip-like electric component. 14. The method for manufacturing a semiconductor device according to claim 13, wherein the component and the substrate are electrically connected by solder.
ており、該補強板の上面に接着樹脂を塗布する工程を含
み、 前記蓋部材の固着工程にて、前記接着樹脂を介して蓋部
材と前記補強板とを固着させる請求項１３または１４に
記載の半導体装置の製造方法。15. A reinforcing plate is mounted on the substrate, the method including a step of applying an adhesive resin to an upper surface of the reinforcing plate, and a step of fixing the lid member through the adhesive resin in the fixing step of the lid member. The method of manufacturing a semiconductor device according to claim 13, wherein the reinforcing plate is fixed to the reinforcing plate.
前記チップ状電気部品が接続されている面と反対側の面
に、複数のハンダボールを設ける工程を含む請求項１３
〜１５のいずれか１項に記載の半導体装置の製造方法。16. The method according to claim 13, further comprising the step of providing a plurality of solder balls on a surface of the substrate opposite to a surface to which the semiconductor chip and the chip-shaped electric component are connected.
16. The method for manufacturing a semiconductor device according to any one of items 15 to 15.
工程と、 前記蓋部材の一部と前記リードフレームの一部とを除い
て、前記基板と前記半導体チップと前記チップ状電気部
品とアンダーフィル樹脂とをモールド樹脂によりモール
ドする工程とを含む請求項１３〜１６のいずれか１項に
記載の半導体装置の製造方法。17. A step of connecting a lead frame to the substrate; and excluding a part of the lid member and a part of the lead frame, the substrate, the semiconductor chip, the chip-shaped electric component, and an underfill resin. 17. A method of manufacturing a semiconductor device according to claim 13, further comprising the step of:
程と、前記半導体チップを取り囲む枠状の導電性の補強
板に設けられている、板厚方向に貫通する孔部内に、導
電性接着樹脂を充填させる工程と、絶縁性接着樹脂によ
り、前記補強板と前記基板とを接合し、絶縁性接着樹脂
により、前記補強板と、前記半導体チップから発生する
熱を外に排出する放熱板である導電性の蓋部材とを接合
する工程とを含み、 前記孔部内に充填された導電性接着樹脂により、前記蓋
部材と前記補強板と前記基板とを導通させる半導体装置
の製造方法。18. A step of mounting a semiconductor chip on a substrate, and filling a conductive adhesive resin into a hole penetrating in a thickness direction provided in a frame-shaped conductive reinforcing plate surrounding the semiconductor chip. And bonding the reinforcing plate and the substrate with an insulating adhesive resin, and using the insulating adhesive resin, the reinforcing plate and a conductive plate which is a heat radiating plate for discharging heat generated from the semiconductor chip to the outside. A method of manufacturing a semiconductor device in which the lid member, the reinforcing plate, and the substrate are electrically connected by the conductive adhesive resin filled in the hole.
電性の補強板に設けられている、板厚方向に貫通する孔
部内に、導電性接着樹脂を充填させる工程を含み、 前記孔部内に充填された導電性接着樹脂により、導電性
の前記蓋部材と前記補強板と前記基板とを導通させる請
求項１３〜１７のいずれか１項に記載の半導体装置の製
造方法。19. A step of filling a conductive adhesive resin in a hole provided in a frame-shaped conductive reinforcing plate surrounding the semiconductor chip and penetrating in a plate thickness direction, and filling the hole. The method for manufacturing a semiconductor device according to claim 13, wherein the conductive lid member, the reinforcing plate, and the substrate are electrically connected by the conductive adhesive resin.
半導体チップおよび前記チップ状部品が設けられた領域
の外形に沿って前記半導体チップおよび前記チップ状部
品を取り囲む枠状に形成されている補強板を配設する請
求項１３〜１９のいずれか１項に記載の半導体装置の製
造方法。20. A frame formed between the substrate and the lid member and surrounding the semiconductor chip and the chip-shaped component along an outer shape of a region where the semiconductor chip and the chip-shaped component are provided. 20. The method for manufacturing a semiconductor device according to claim 13, wherein a reinforcing plate is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31390199A JP3228339B2 (en) | 1998-11-04 | 1999-11-04 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10-313389 | 1998-11-04 | ||
| JP31338998 | 1998-11-04 | ||
| JP31390199A JP3228339B2 (en) | 1998-11-04 | 1999-11-04 | Semiconductor device and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000200870A true JP2000200870A (en) | 2000-07-18 |
| JP3228339B2 JP3228339B2 (en) | 2001-11-12 |
Family
ID=26567538
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31390199A Expired - Fee Related JP3228339B2 (en) | 1998-11-04 | 1999-11-04 | Semiconductor device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3228339B2 (en) |
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