JP2000155312A - Active matrix display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an active matrix display device having an improved aperture ratio and shielding light toward a driving circuit part without increasing production steps. SOLUTION: In an active matrix display device which is at least provided with a first insulating substrate having a pixel part and a driving circuit part to drive the pixel part, comprising TFTs(thin film transistors), on the same plane and a second insulating substrate placed opposite to the first substrate and provided with a color filter, a light shielding layer is constructed of a lamination of three color filters, R(red), G(green) and B(blue) located, on a position opposite to the driving circuit part, on the second insulating substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device, and more particularly to an active matrix type liquid crystal display device having an improved aperture ratio and reduced steps.

[0002]

2. Description of the Related Art In an active matrix type liquid crystal display device, a pixel is arranged at each intersection of a matrix, and all pixels are provided with switching elements, and pixel information is obtained by turning on / off a switching element. What is controlled. Liquid crystal is used as a display medium of such a display device. In the present invention, a three-terminal element, that is, a thin film transistor having a gate, a source, and a drain is used as the switching element.

In the description of the present invention, a row in a matrix refers to a row in which a scanning line (gate line) arranged in parallel to the row is connected to a gate electrode of a thin film transistor in the row. Means that a signal line (source line) arranged in parallel with the row is connected to a source (or drain) electrode of the thin film transistor in the column. Further, a circuit for driving a scanning line is referred to as a scanning line driving circuit, and a circuit for driving a signal line is referred to as a signal line driving circuit. The thin film transistor is called a TFT. In recent years, in the market of viewfinders and projectors of video cameras, liquid crystal display devices in which a drive circuit is formed simultaneously with pixel TFTs on a glass substrate using polysilicon TFTs are becoming mainstream. Furthermore, the reliability of the liquid crystal display has been improved,
In order to reduce the substrate size, a driving circuit is provided in a liquid crystal region in the same manner as a pixel TFT.

FIG. 2 shows a first conventional example of an active matrix type liquid crystal display device. As shown in this example, in the active matrix type liquid crystal display device, a signal line driving circuit is arranged at the upper part of FIG. 2 and a scanning line driving circuit is arranged at the left side, and the signal lines and the scanning lines are driven. FIG. 3 is an enlarged view of a part of the pixel matrix of FIG. FIG. 3 shows a region where light does not pass between the ITO pixel electrodes due to the overlap of the black matrix on the counter substrate and the ITO pixel electrodes. Black matrix refers to the gap between pixel electrodes and TFT
A layer that blocks the light in the area, determines the aperture ratio of the panel, and has a significant effect on the display brightness. The aperture ratio is obtained by dividing the opening area of the black matrix by the area of the pixel cell. The larger the value, the more advantageous the display. FIG. 4 shows a cross-sectional view of this example. Improvement of brightness is a big issue in color display,
It is necessary to increase the aperture ratio. Further, by improving the aperture ratio, the brightness of a light source such as a backlight can be reduced, and the power consumption of the liquid crystal display device can be reduced.

[0005]

When a black matrix is formed on a counter substrate, the black matrix is made of ITO as shown in FIG. 3 because of the accuracy of bonding between the TFT substrate and the counter substrate.
There is a problem that the area of the opening cannot be increased because the pixel electrode enters the pixel electrode by about 5 to 7 μm.

FIG. 5 shows a second conventional example in which a solution to the problem is provided. In this example, the black matrix was transferred from the counter substrate to the TFT substrate. At this time, since the black matrix and the ITO pixel electrode are formed on the same substrate, the bonding accuracy is improved, and the overlapping area can be about 2 μm. Therefore, by transferring the black matrix to the TFT substrate, in the example of FIG. 3, the aperture ratio shown in FIG.
(Overlap area 7 μm), about 40% shown in FIG.
(Overlap area 2 μm). In particular, as described above, in the case where the counter substrate has a size facing the driving circuit and the driving circuit is provided in the liquid crystal region, the driving circuit region and the pixel region are close to each other. Also, the need for light shielding occurs.

A black matrix for shielding pixels from light
If the light is transferred to the TFT substrate and the light-shielding film is used to shield the drive circuit, there is no problem with the light-shielding, but the capacitance of the interlayer insulating film between the TFT of the drive circuit and the black matrix cannot be ignored. When the thickness of the interlayer film is 300 nm and a nitride film is used, the capacitance of the insulating film per unit area is 2.50 × 10 ^-16 (F /
μm ² ] .For example, if there is a wiring of 100 μm in width and 50,000 μm in length in the clock line of the driving circuit, the capacitance between the driving circuit wiring and the black matrix is 1.25 ×
10 ^-9 [F]. At this time, assuming that the sheet resistance of the wiring is 0.2 [Ω / μm ² ], the delay time of the wiring of the drive circuit is 1.
25 × 10 ⁻⁷ [s], which is a problem when the wiring is driven at several MHz. The driving circuit has more important circuit characteristics than the pixel TFT and needs to be improved.

FIG. 6 shows a third conventional example in which the problem of deteriorating the drive circuit characteristics by moving the black matrix from the counter substrate to the TFT substrate is provided. In this example, only the black matrix in the pixel section is transferred to the TFT substrate,
The black matrix of the driving unit is formed on the opposite substrate. However, in this case, although the aperture ratio is improved, the number of steps is increased because the black matrix is formed on both the TFT substrate and the counter substrate.

It is an object of the present invention to provide a liquid crystal display device having an improved aperture ratio without increasing the number of steps.
SUMMARY OF THE INVENTION An object of the present invention is to provide a liquid crystal display device in which a driving circuit portion can be shielded from light without increasing the number of steps.

[0010]

In order to solve the above-mentioned problems, the present invention provides a liquid crystal display device comprising:
A first insulating substrate having a plurality of matrix-arranged pixel portions and a driving circuit portion configured by a thin film transistor and driving the pixel portion on the same surface, and opposing the substrate, and a color filter. An active matrix liquid crystal display device having at least a second insulating substrate having, and a liquid crystal material filled between the first insulating substrate and the second insulating substrate, wherein the second insulating On the substrate, at a position facing the drive circuit section, R (red),
An active matrix liquid crystal display device including a light-shielding film, which is configured by providing three types of color filters of G (green) and B (blue) in an overlapping manner.

In another aspect of the present invention, a pixel unit having a plurality of pixels connected to a thin film transistor arranged in a matrix manner and a drive circuit unit configured by the thin film transistor and driving the pixel unit include: A first insulating substrate having the same surface, a color filter provided at a position facing the pixel portion, a second insulating substrate facing the first insulating substrate, and the first insulating substrate And a liquid crystal material filled between the second insulating substrate and the second insulating substrate. In the active matrix liquid crystal display device, a black matrix is provided in the pixel portion, and the second insulating substrate Above, at a position facing the drive circuit unit, a light-shielding film configured by providing three types of color filters of R (red), G (green), and B (blue) in an overlapping manner is provided. To An active matrix liquid crystal display device according to symptoms.

In another aspect of the present invention, a pixel unit connected to a thin film transistor has a plurality of pixels arranged in a matrix, and a driving circuit unit configured by the thin film transistor and driving the pixel unit includes: A first insulating substrate having the same surface, a color filter provided at a position facing the pixel portion, a second insulating substrate facing the first insulating substrate, and the first insulating substrate And a liquid crystal material filled between the second insulating substrate and the active matrix liquid crystal display device, wherein the pixel portion is provided with a black matrix, and the driving circuit portion is It has a wiring member made of the same material as the black matrix, and on the second insulating substrate, at a position facing the drive circuit portion, R (red),
An active matrix type liquid crystal display device characterized in that a light-shielding film constituted by three color filters of G (green) and B (blue) is provided in an overlapping manner.

Further, in another structure of the present invention, in each of the above structures, R (red), G (green), and B (blue) which constitute a light shielding film.
Each of the three types of color filters is an active matrix liquid crystal display device having the same composition as the same type of color filter provided at a position facing the pixel portion.

In another aspect of the present invention, a pixel unit in which a plurality of pixels to which thin film transistors are connected is arranged in a matrix manner, and a driving circuit unit configured by the thin film transistors for driving the pixel unit includes: A first insulating substrate having the same surface, a color filter provided at a position facing the pixel portion, a second insulating substrate facing the first insulating substrate, and the first insulating substrate And a liquid crystal material filled between the second insulating substrate and the active matrix liquid crystal display device, wherein the pixel portion is provided with a black matrix, and the driving circuit portion is It has a wiring member made of the same material as the black matrix, and a light-shielding film is provided on the second insulating substrate at a position facing the drive circuit portion. An active matrix liquid crystal display device according to claim.

Another structure of the present invention is the active matrix type liquid crystal display device, wherein in each of the above structures, the driving circuit is in contact with the liquid crystal material directly or through a thin film.

Another structure of the present invention is the active matrix liquid crystal display device according to any of the above structures, wherein the counter substrate has a size facing the driving circuit.

The present invention overcomes the above-mentioned problems and improves the aperture ratio without increasing the number of steps. The structure is shown in FIG. In this example, a black matrix of a pixel portion is provided on a TFT substrate to improve an aperture ratio, and three color filters R, G, and B are provided as light-shielding films of a drive circuit portion at the same position on an opposing substrate. . FIG. 10 shows the spectral characteristics of the color filters R, G, and B. Color filters R, G
, B 3 are not visible light-transmitting as shown in FIG. 10 and can be used as a light-shielding film. In addition, since it is not necessary to form a light-shielding film in the same layer as the black matrix in the pixel portion on the driving circuit, the material used as the black matrix in the pixel portion is used as a material constituting the wiring material in the driving circuit portion. It can be used.

[0018]

[Embodiment 1] A method of manufacturing a substrate of a liquid crystal display device using an active matrix circuit in this embodiment will be described below. The manufacturing process for obtaining the monolithic active matrix circuit of the present embodiment will be described below with reference to FIG.
This will be described with reference to FIG. This step is for a low temperature polysilicon process. The left-hand side of FIG. 7 shows the TFT manufacturing process of the drive circuit, and the right-hand side shows the TFT manufacturing process of the active matrix circuit. First, on a glass substrate (701) as a first insulating substrate, a thickness of 100 to 3 as a base oxide film (702).
A 00 nm silicon oxide film was formed. As a method for forming this silicon oxide film, a sputtering method in an oxygen atmosphere or a plasma CV
Method D may be used.

After that, the amorphous silicon film is formed to a thickness of 30 to 150 nm, preferably
It was formed at 0-100 nm. Then, thermal annealing was performed at a temperature of 500 ° C. or more, preferably 500 to 600 ° C., to crystallize or improve the crystallinity of the silicon film. After crystallization by thermal annealing, light (eg, laser) annealing may be performed to further enhance crystallization. Also,
JP-A-6-244103, 6-24
As described in 4104, an element (catalytic element) for promoting crystallization of silicon such as nickel may be added.

Next, the silicon film is etched to form the TFT active layer (703) (p-channel type TFT) of the island-shaped drive circuit.
(704) (for N-channel TFT) and the active layer (705) of the TFT (pixel TFT) of the matrix circuit. Further, the thickness is 50 to 200 by a sputtering method in an oxygen atmosphere.
A nm-thick silicon oxide gate insulating film (706) was formed. As a method for forming the gate insulating film, a plasma CVD method may be used. When a silicon oxide film is formed by a plasma CVD method, it is preferable to use dinitrogen monoxide (N ₂ O) or oxygen (O ₂ ) and monosilane (SiH ₄ ) as source gases.

Thereafter, aluminum having a thickness of 200 to 600 nm was formed on the entire surface of the substrate by sputtering. Here, aluminum containing silicon, scandium, palladium, or the like may be used to prevent hillocks from being generated by a subsequent thermal process. This is etched to form gate electrodes (707, 708, 709). (FIG. 7 (A)) Next, this aluminum is anodized. The surface of aluminum is anodized by aluminum oxide (710, 71
1, 712), which has an effect as an insulator. (Fig. 7 (B))

Next, a photoresist mask (713) covering the active layer of the P-channel TFT is formed. Then, phosphorus is implanted by ion doping using phosphine as a doping gas. The dose is 1 × 10 ^{12 to} 5 × 10 ¹³ atoms / cm ² . As a result, strong N-type regions (source, drain) (714, 715) are formed. (Figure 7
(C) Next, a photoresist mask (716) covering the active layer of the N-channel TFT and the active layer of the pixel TFT is formed.
Then, diborane (B
Boron is implanted using ₂ H ₆ ) as a doping gas. The dose is 5 × 10 ¹⁴ to 8 × 10 ¹⁵ atoms / cm ² . As a result, a P-type region (717) is formed. With the above doping, strong N-type regions (source, drain) (714,
715), a strong P-type region (source, drain) (717) is formed. (Fig. 7 (D))

After that, thermal annealing was performed at 450 to 850 ° C. for 0.5 to 3 hours to recover the damage due to doping, activate the doping impurities, and recover the crystallinity of silicon. After that, an interlayer insulator (718
), A silicon oxide film is deposited to a thickness of 3 by plasma CVD.
It was formed to a thickness of 00 to 600 nm. This may be a silicon nitride film or a multilayer film of a silicon oxide film and a silicon nitride film. And
The interlayer insulating film (718) was etched by wet etching or dry etching to form contact holes at the source / drain.

Then, a thickness of 200 to 600
An aluminum film of nm or a multilayer film of titanium and aluminum is formed. This was etched to form electrodes / wirings (719, 720, 721) for the peripheral circuit and electrodes / wirings (722, 723) for the pixel TFT. (FIG. 7E) Further, a silicon nitride film (724) having a thickness of 100 to 300 nm is formed as a passivation film by a plasma CVD method, and is etched to form a contact hole reaching the electrode (723) of the pixel TFT. Was formed. Next, an ITO (indium tin oxide) film having a thickness of 50 to 150 nm formed by a sputtering method was etched to form a pixel electrode (725). Then, a 200-nm-thick silicon nitride film (726
) Was formed and etched to form an interlayer film.

Finally, a 200 nm thick titanium or chromium film is formed by sputtering. This was etched to form a pixel part black matrix (727). Here, the black matrix is the uppermost layer, but the ITO and the black matrix may be reversed.

Next, a method of manufacturing a counter substrate will be described with reference to FIG.
This will be described with reference to FIG. FIG. 8 is a process sectional view of the counter substrate in the first embodiment. A glass substrate (801) as a second insulating substrate and a color filter (802) having a thickness of 1.
Apply 6 μm red color resist using a spinner. Next, it is dried at a temperature of 90 ° C., exposed, developed, washed with water, and dried at a temperature of 210 ° C. As a result, a red (R) color filter is formed on the entire surface of the drive circuit portion formed on the first insulating substrate and at a position on the counter substrate facing the R (red) region of the pixel portion. You. Next, in the same manner, a region where red (R) is applied to the entire surface of the drive circuit in the previous process and a region G (green) of the pixel portion are opposed.
A G (green) color filter (803) having a thickness of 1.4 μm is formed at a position on the counter substrate. Next, in the same manner, a 1.5 μm-thick portion is formed on a region on the opposing substrate, which opposes the G (green) region facing the entire surface of the driving circuit and the G (green) region of the pixel portion in the previous step. B (blue) color filter (804) is formed. Thereafter, O ₂ ashing is performed to remove the residual, and then an overcoat film having a thickness of 1.1 μm for protecting the color filters is formed. Finally,
An ITO (indium tin oxide) film having a thickness of 50 to 150 nm is formed on the entire surface by sputtering to form a counter electrode (805).

In this manner, R, G, and B corresponding to each pixel are located at positions on the counter substrate facing the pixel portion.
The three color filters of R, G, and B (three colors) are provided in a region on the counter substrate facing the entire surface of the drive circuit portion. R, G, B
When three types (three colors) of color filters are superposed, visible light hardly passes therethrough, so that the display becomes black visually and a substantial light-shielding film can be formed.

Next, an assembly process of the active matrix type liquid crystal display device will be described below. Clean the TFT substrate and the counter substrate, and thoroughly remove the chemicals. Next, an alignment film is attached to the TFT substrate and the counter substrate. A certain groove is formed in the alignment film, and the liquid crystal molecules are uniformly arranged along the groove. As the material for the alignment film, a material obtained by dissolving about 10% by weight of a polyimide in a solvent such as butyl cellulose or n-methylpyrrolidone is used. This is called a polyimide varnish. The polyimide varnish is printed by a flexographic printing device.

Then, the alignment films adhered to both the TFT substrate and the opposite substrate are heated and cured. This is called baking, in which hot air having a maximum temperature of about 300 ° C. is sent and heated to bake and cure the polyimide varnish. Next, rub the glass substrate with the alignment film in a certain direction with a buff cloth (fiber such as rayon, nylon, etc.) with a hair length of 2-3 mm.
A rubbing step for forming fine grooves is performed. Then, spherical spacers such as polymer, glass, and silica are dispersed on either the TFT substrate or the opposing substrate. As a method of spraying the spacer, there are a wet method in which the spacer is mixed with a solvent such as pure water or alcohol and spraying on a glass substrate, and a dry method in which the spacer is sprayed without using any solvent.

Next, a sealing material is applied to the outer frame of the pixel portion of the TFT substrate. The purpose of applying the sealing material is to bond the TFT substrate to the counter substrate and to prevent the injected liquid crystal material from flowing out. As a material of the sealing material, a material obtained by dissolving an epoxy resin and a phenol curing material in a solvent of ethyl cellosolve is used. Two glass substrates are bonded to each other to apply the sealing material. The method employs a heat-curing method in which the sealing material is cured by a high-temperature press at about 160 ° C. in about 3 hours. Next, the TFT substrate and the opposite substrate are bonded together, a liquid crystal material is inserted from the liquid crystal injection port, and the liquid crystal material injection port is sealed. As described above, the liquid crystal display device of this embodiment is configured.

[Embodiment 2] FIG. 9 shows a second embodiment of the present invention, in which a wiring material of a drive circuit is formed by using the same material as a material constituting a black matrix of a pixel portion. Show. That is, a thin film of titanium, chromium, or the like formed to form a black matrix of the pixel portion is used not only for the black matrix but also as a wiring material of a driving circuit.

As described above, when a black matrix is present on a TFT substrate, a thin film of titanium or chromium of the same material as the black matrix of the pixel portion is processed on the drive circuit as described above to prevent the occurrence of capacitive coupling. Thus, a light-shielding film cannot be formed. However, instead of providing a thin film of titanium or chrome so as to cover the entire drive circuit,
There is no problem in providing the drive circuit so as to cover a part of the drive circuit to the extent that the capacitive coupling is not a problem. Since a thin film of titanium or chromium has high conductivity, by using this film to form a wiring material, it is possible to reduce the area by increasing the number of wirings in the drive circuit and improving the element density. .

FIG. 12 shows the configuration of the inverter chain. FIG. 12B illustrates an example in which a thin film of titanium, chromium, or the like formed to form a black matrix is used not only for the black matrix but also for a wiring material of a driving circuit to form an inverter chain. Show. FIG.
As shown in (A), when another wiring crosses the inverter chain, and when no wiring material is used, the wiring must be passed between the inverters. However, as shown in FIG. 12B, when a black matrix is formed, a wiring material is formed at the same time, and the wiring material is used to form a wiring crossing the inverter chain, whereby the wiring can be overlapped with the inverter. This makes it possible to reduce the area of the drive circuit by increasing the number of wiring layers and the element density of the drive circuit.

[Embodiment 3] FIG. 11 shows a third embodiment of the present invention, in which a color filter is not used.
This is an example of a TFT substrate. Generally, a color filter is not used in a three-panel type liquid crystal projector or the like. In this case, a normal light-shielding film is formed on the opposing substrate, and the wiring material of the driving circuit is formed of the same film as the black matrix of the pixel. Becomes possible. In this example, ITO is formed on the uppermost layer.

[0035]

As described above, according to the present invention, a black matrix is used as a light-shielding film in a pixel portion on a TFT substrate, and a color filter R and a light-shielding film in a driving circuit portion are provided.
By providing three layers G and B at the same position on the opposite substrate, the aperture ratio can be improved without increasing the number of steps. Further, by using the same film as the black matrix as a wiring material, the density of the driving circuit can be increased.

[Brief description of the drawings]

FIG. 1 is an example of a cross-sectional view of an active matrix liquid crystal display device.

FIG. 2 is a diagram showing a first conventional example of an active matrix type liquid crystal display device.

FIG. 3 is an enlarged view of a first conventional example of an active matrix type liquid crystal display device.

FIG. 4 is a sectional view of a first conventional example of an active matrix type liquid crystal display device.

FIG. 5 is a sectional view of a second conventional example of an active matrix liquid crystal display device.

FIG. 6 is a sectional view of a third conventional example of an active matrix liquid crystal display device.

FIG. 7 is an example of a process sectional view (TFT substrate) of a low-temperature polysilicon process of the present invention.

FIG. 8 is an example of a process sectional view of the counter substrate of the present invention.

FIG. 9 is a diagram showing a second embodiment of the present invention.

FIG. 10 is a diagram showing spectral characteristics of color filters (R, G, B).

FIG. 11 is a diagram showing a third embodiment of the present invention.

FIG. 12 is a diagram showing a pattern example of a driving circuit using the present invention.

[Explanation of symbols]

701,801 Glass substrate 702 Underlying silicon oxide 703-705 Silicon active layer 706 Gate insulating film 707-709 Al gate terminal 710-712 Anodized film 713-716 Photoresist 714-715 Strong N-type region (source, drain) 717 Strong P-type region (source, drain) 718, 726 Interlayer insulating film 719 to 724 Al electrode 725 Pixel transparent electrode 727 Black matrix 802 to 804 Color filter

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) G09F 9/30 349 G02F 1/136 500 (72) Inventor Mitsuaki Nori 398 Hase, Atsugi-shi, Kanagawa Pref. Conductor Energy Laboratory

Claims (8)

[Claims] A first insulating substrate provided with a pixel portion having a thin film transistor arranged in a matrix, a driving circuit portion having a thin film transistor for driving the pixel portion, and a first insulating substrate. Provided opposite and R
(Red) color filter, G (green) color filter and B
And a second insulating substrate having a (blue) color filter. In the active matrix display device, a portion of the first insulating substrate opposed to the drive circuit portion is shielded from light on the second insulating substrate. A film is provided, and the light shielding film is
An active matrix display device formed by overlapping an R (red) color filter, the G (green) color filter, and the B (blue) color filter. A first insulating substrate provided with a pixel portion having a thin film transistor arranged in a matrix, a driving circuit portion having a thin film transistor and driving the pixel portion, and a first insulating substrate provided with the first insulating substrate. Provided opposite and R
(Red) color filter, G (green) color filter and B
And a second insulating substrate having a (blue) color filter. In the active matrix display device, a black matrix is provided in the pixel portion, and the first insulating substrate is provided on the second insulating substrate. A light-shielding film is provided on a portion of the insulating substrate facing the drive circuit portion, and the light-shielding film is
An active matrix display device formed by overlapping a (red) color filter, the G (green) color filter, and the B (blue) color filter. 3. A first insulating substrate provided with a pixel portion having a thin film transistor arranged in a matrix manner, a driving circuit portion having a thin film transistor and driving the pixel portion, and a first insulating substrate. Provided opposite and R
(Red) color filter, G (green) color filter and B
And a second insulating substrate having a (blue) color filter, wherein the pixel portion is provided with a black matrix, and the drive circuit portion is made of the same material as the black matrix. Having a wiring, a light-shielding film is provided on a portion of the first insulating substrate facing the drive circuit portion on the second insulating substrate,
The active matrix display device, wherein the light-shielding film is formed by overlapping the R (red) color filter, the G (green) color filter, and the B (blue) color filter. A first insulating substrate provided with a pixel portion having thin-film transistors arranged in a matrix, a driving circuit portion having an inverter chain formed of the thin-film transistors and driving the pixel portion; R (red) color filter, G
A second insulating substrate having a (green) color filter and a B (blue) color filter, wherein the driving of the first insulating substrate is performed on the second insulating substrate. A light-shielding film is provided in a portion facing the circuit portion, and the light-shielding film is formed by stacking the R (red) color filter, the G (green) color filter, and the B (blue) color filter. An active matrix display device characterized in that: 5. A first insulating substrate provided with a pixel portion having thin-film transistors arranged in a matrix, a drive circuit portion having an inverter chain of thin-film transistors and driving said pixel portion, and said first insulating substrate. R (red) color filter, G
A second insulating substrate having a (green) color filter and a B (blue) color filter, wherein the pixel portion is provided with a black matrix, and the second insulating substrate A light-shielding film is provided on a portion of the first insulating substrate facing the drive circuit portion, and the light-shielding film includes the R (red) color filter, the G (green) color filter, and the B (green). An active matrix display device formed by stacking blue) color filters. 6. A first insulating substrate provided with a pixel portion having thin-film transistors arranged in a matrix, a drive circuit portion having an inverter chain formed of thin-film transistors and driving said pixel portion, and said first insulating substrate. R (red) color filter, G
A second insulating substrate having a (green) color filter and a B (blue) color filter, wherein the pixel portion is provided with a black matrix, and the drive circuit portion includes A wiring made of the same material as the black matrix; a light-shielding film is provided on the second insulating substrate at a portion of the first insulating substrate facing the drive circuit portion; (Red)
An active matrix display device is formed by superposing a color filter of (G), a color filter of G (green) and a color filter of B (blue). 7. An active matrix display device according to claim 1, wherein an active layer of said thin film transistor is made of polysilicon. 8. The active matrix display device according to claim 1, wherein said black matrix is made of titanium or chromium.