JP2000021727A - Device for forming semiconductor circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the cost of the manufacturing process as a whole of a semiconductor device, and to shorten the manufacturing time. SOLUTION: A linear semiconductor material 30, on whose surface a metal thin film and a resist film are formed is carried at a constant speed by having rollers 142 and 144 rotate. An electronic beam plotting device 140, on which fine electronic guns 154 are annularly arranged, is provided between the rollers 142 and 144. The linear semiconductor material 30 is put through a cylindrical hole 152 of the electronic beam plotting device 140, and circuit patterns are plotted to the surface of the linear semiconductor 30 by electronic beams. The straight-shape semiconductor element 30, on which the circuit patterns are plotted, is developed and etched and an electrode is formed and cut into constant lengths. Thus, a semiconductor device can be manufactured by using the straight shape semiconductor material 30 of a constant length.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor circuit forming apparatus for forming a circuit of a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, a flat silicon substrate called a wafer is used as a semiconductor material, and a semiconductor device is obtained by forming a circuit on one surface of a wafer. In order to reduce the unit price of a semiconductor device, in a process of manufacturing a semiconductor material, after a columnar large-diameter silicon single crystal is manufactured by a crystal growth method, the large-diameter silicon single crystal is cut into a predetermined size. Thereby, a large number of wafers can be obtained at one time.

[0003]

However, the use of a large-diameter silicon single crystal increases the size of a manufacturing apparatus, and as a result, raises the cost of the entire semiconductor device manufacturing process. In a method of obtaining a semiconductor device using a wafer, the wafer is usually processed in a stationary state in each process, and is moved by a transfer device such as a belt conveyor between the processes, and the process flow is discontinuous.
Since the number of steps required to obtain a semiconductor device is large, and processing and transport are repeated for the number of steps, it takes several months to complete the semiconductor device, and shortening the manufacturing time is an issue. .

[0004] The present invention has been made in view of such a point, and by making the shape of a semiconductor material linear, it is possible to reduce the size of the device and to make each process continuous, thereby enabling the semiconductor device to be manufactured. It is intended to reduce the cost of the entire manufacturing process and the manufacturing time.

[0005]

A semiconductor circuit forming apparatus according to the present invention is an apparatus for forming a circuit pattern on an outer peripheral surface of a linearly formed semiconductor material, and moves the linear semiconductor material in a longitudinal direction. A moving means and a drawing means for drawing a circuit pattern using a scanning beam on an outer peripheral surface of a linear semiconductor material moved by the moving means are provided.

In the semiconductor circuit forming apparatus, the scanning beam may be an electron beam. In this case, the circuit pattern is drawn on the outer peripheral surface of the linear semiconductor material by the scanning of the drawing means with the electron beam.

In the semiconductor circuit forming apparatus, the scanning beam may be a laser beam. In this case, the circuit pattern is drawn on the outer peripheral surface of the linear semiconductor material by the scanning of the drawing means with the laser beam.

In the semiconductor circuit forming apparatus, the scanning beam may be an ion beam. In this case, the circuit pattern is drawn on the outer peripheral surface of the linear semiconductor material by the scanning of the drawing means with the ion beam.

In the semiconductor circuit forming apparatus, the drawing means preferably includes a plurality of beam emitting means for emitting scanning beams from different directions toward the linear semiconductor material. The outer peripheral surface is scanned while being divided in the circumferential direction.

[0010] In the semiconductor circuit forming apparatus, preferably, the plurality of beam emitting means are annularly arranged in a plane perpendicular to the longitudinal direction of the linear semiconductor material.

In the semiconductor circuit forming apparatus, the linear semiconductor material preferably has a circular cross section perpendicular to the longitudinal direction.

In the semiconductor circuit forming apparatus, preferably, the moving means moves the linear semiconductor material at a constant speed.

In the semiconductor circuit forming apparatus, preferably, a thin film layer forming means provided on a moving path of the linear semiconductor material by the moving means and forming a thin film layer on an outer peripheral surface of the linear semiconductor material; A protective film forming means provided on the moving path of the thin film layer forming means at a stage subsequent to the thin film layer forming means and forming an etching protective film outside the thin film layer of the linear semiconductor material obtained by the thin film layer forming means; A drawing means provided on the movement path after the protection film forming means, and the etching protection film is scanned by the scanning beam to selectively remove the etching protection film according to the circuit pattern; and An etching means provided on the movement path after the drawing means for removing the thin film layer from which the etching protective film has been removed by etching, and a linear semiconductor. In the movement path of the material provided after the etching means, and a protective film removing means for removing all the etching protective film of the linear semiconductor material.

In the semiconductor circuit forming apparatus, preferably, the moving means includes a supply drum provided before the thin film layer forming means and a winding drum provided after the protective film removing means on the moving path of the linear semiconductor material. And the linear semiconductor material is continuous between the supply drum and the winding drum.

[0015]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a semiconductor circuit forming apparatus according to an embodiment of the present invention.

FIG. 1 is a view showing an example of a semiconductor device manufactured using the semiconductor circuit forming apparatus of the present embodiment. The semiconductor device 40 as a memory is obtained by combining a plurality of linear semiconductors 50, and a circuit is formed on the outer peripheral surface of each linear semiconductor 50 by a semiconductor circuit forming device. This circuit has a multilayer structure composed of various thin film layers.

The linear semiconductor 50 is made of a rectangular parallelepiped casing 42.
It is provided within. An external terminal 44 extending from one surface of the casing 42 is electrically connected to a predetermined linear semiconductor 50. Each linear semiconductor 50 is manufactured from a linear semiconductor material having a diameter of 260 μm and an axial length of 105 mm. The linear semiconductors 50 are arranged in parallel to each other along the axial direction, and are arranged in a grid of 250 in the vertical direction and 250 in the horizontal direction in a plane perpendicular to the axis.

The outer surface of the linear semiconductor 50 has a thickness of 0.1 μm.
1024 (bit) storage elements in the circumferential direction at a resolution of
131072 storage elements are arranged in the axial direction, whereby the linear semiconductor 50 has a storage capacity of 16 megabytes per line. Therefore, the total memory capacity of the semiconductor device 40 is 1 terabyte. A plurality of electrodes 52 are formed on two opposing linear semiconductors 50 and are connected to each other by these electrodes 52. The linear semiconductor 50 is connected to the external terminal 44.

FIG. 2 is a schematic diagram showing a simplified process up to obtaining the semiconductor device 40. First, a linear semiconductor material is manufactured in the semiconductor material manufacturing apparatus 10. The linear semiconductor material is transferred to the semiconductor circuit forming device 10 by the transfer device 300.
Transported to 0. In the semiconductor circuit forming apparatus 100, a circuit is formed on the outer peripheral surface of the linear semiconductor material, whereby the linear semiconductor 50 is obtained. The linear semiconductor 50 is mounted on the transfer device 3
00 is transferred to the semiconductor assembling apparatus 200. Then, in the semiconductor assembling apparatus 200, the semiconductor device 40 shown in FIG. 1 is assembled using the plurality of linear semiconductors 50.

FIG. 3 shows a semiconductor material manufacturing apparatus 10. The powdery polycrystalline silicon 11 is
It is supplied to the heavy crucible 14. The double crucible 14 is formed of high-purity graphite or quartz. The double crucible 14 has an outer peripheral wall 16 and an inner peripheral wall 18 formed concentrically, and the outer peripheral wall 16 and the inner peripheral wall 18 are connected at the bottom. That is, the double crucible 14 has the central furnace 15 inside the inner peripheral wall 18,
An annular furnace 17 surrounded by an outer peripheral wall 16 and an inner peripheral wall 18 is provided. The inner peripheral wall 18 is formed with a transmission hole 18a through which molten silicon can enter and exit the annular furnace 17 and the central furnace 15.

The polycrystalline silicon 11 is melted and liquefied in the annular furnace 17 and passes through the perforation hole 18a.
Flows into The bottom surface of the central furnace 15 is sharpened downward, and an outlet 20 having a diameter of about 1 mm is formed at the lower end. The liquid silicon supplied to the central furnace 15 is taken out of the outlet 2
It flows out from 0 vertically downward by its own weight. Outlet 20
Is set arbitrarily according to the purpose.

The double crucible 14 is supported by a heat-resistant support member 22. A coil 2 is provided on the outer periphery of the support member 22.
4, and an electromagnet 26 is further provided outside the coil 24. The coil 24 heats the silicon in the double crucible 14 at a high frequency of, for example, about 1500 ° C. The convection of the silicon melt is controlled by the electromagnet 26.

Below the double crucible 14, heaters 28a, 28b and 28c are provided around the outflow path of silicon. These heaters 28a, 28b, 28c have a temperature gradient such that the heating temperature gradually decreases from top to bottom. Thereby, the silicon is gradually cooled and solidified, and the linear semiconductor material 30 is obtained.

The temperature gradient of the heaters 28a, 28b, 28c is arbitrarily adjusted according to the diameter of the outlet 20. The heating temperature of the electromagnet 26 and the heaters 28a, 28b, 28c is controlled by a control device (not shown). Double crucible 1
4 and the heaters 28 a, 28 b, 28 c are hermetically sealed by a heat insulating material 32. The linear semiconductor material 30 is a heat insulating material 3
2 is vertically lowered from the lower surface opening 32a and wound up on a drum (not shown). At this time, the diameter of the linear semiconductor material 30 is, for example, 260 μm.

As the silicon flows out of the outlet 20,
The cross section becomes a perfect circle due to the surface tension. In addition, outlet 2
By controlling the diameter of 0 and cooling by the heaters 28a, 28b, 28c, the diameter of silicon is controlled,
Silicon is single-crystallized. At the time of cooling, silicon is cooled from the surface to be solidified, and at this time, crystal defects precipitate on the surface due to solidification pressure. This crystal defect is removed by, for example, an acid in a removing device (not shown).

Although not shown, a pressure heating step may be further added to make the linear semiconductor material 30 manufactured by the double crucible 14 single crystallized more completely. The linear semiconductor material 30 extending downward from the opening 32a is subjected to a heat treatment at a temperature at which silicon is recrystallized by a heater while being stretched in the axial direction by two pairs of rollers. Through this step, silicon that has not been single-crystallized by the heaters 28a, 28b, and 28c is single-crystallized.

While the linear semiconductor material 30 is wound on a winding drum, the semiconductor circuit forming apparatus 1 is
00 (see FIG. 2).

FIG. 4 is a diagram schematically showing the semiconductor circuit forming apparatus 100. The semiconductor circuit forming apparatus 100 includes a supply drum 102 and a winding drum 104. 260μ diameter
In the linear semiconductor material 30 of m, an oxide film layer is formed on the outer peripheral surface and a nitride film layer is formed outside the oxide film layer in advance, and is wound around the supply drum 102. The linear semiconductor material 30 is supplied from a supply drum 102, and after a circuit is formed on the outer peripheral surface by the semiconductor circuit forming apparatus 100, the linear semiconductor material 30 is wound as a linear semiconductor 50 by a winding drum 104.

The supply drum 102 has a first driving device 103
, And the winding drum 104 is driven by the second driving device 105. The first and second driving devices 103 and 105 are controlled by a control device 107, whereby the supply speed of the supply drum 102 and the winding drum 1 are controlled.
04 is controlled.

In the semiconductor circuit forming apparatus 100, a circuit is formed by stacking n thin film layers formed according to n types (n is a natural number) of circuit patterns. On the moving path of the linear semiconductor material 30, n circuit pattern forming devices are provided. The controller 107 controls each of the n circuit pattern forming apparatuses. In each circuit pattern forming apparatus, a thin film layer corresponding to one type of circuit pattern is formed by performing post-processing such as a resist film forming process, a drawing process, an etching process, and a deposition growth process. FIG. 4 shows only the first circuit pattern forming apparatus 110, the second circuit pattern forming apparatus 120, and the third circuit pattern forming apparatus 130.

The first circuit pattern forming apparatus 110 will be described. The first circuit pattern forming apparatus 110 includes a resist film forming unit 112,
Drawing unit 114, etching unit 116, and post-processing unit 1
18 is provided.

FIG. 5 shows a first circuit pattern forming apparatus 110.
FIG. 3 is a view showing a cross section of the linear semiconductor material 30 after each processing in FIG. FIG. 5A is a cross-sectional view of the linear semiconductor material 30 after the resist film forming process by the resist film forming unit 112, and FIG. 5B is a cross-section of the linear semiconductor material 30 after the drawing process by the drawing unit 114. FIG. 5C shows the etched portion 1
FIG. 5D is a cross-sectional view of the linear semiconductor material 30 after the etching process performed by the etching unit 16, and FIG.

Before the linear semiconductor material 30 is processed by the first circuit pattern forming apparatus 110, the main body 31 made of silicon and the oxide film layer 3 provided on the outer peripheral surface of the main body 31 are formed.
3 and a nitride film layer 35 provided on the outer peripheral surface thereof.

In the resist film forming section 112, a liquid photoresist is applied to the linear semiconductor material 30 and dried and baked. Thus, a resist film 37 serving as a protective film for etching described later is formed on the outer peripheral surface of the nitride film layer 35 (see FIG. 5A). A conventionally known method is used for applying the resist and drying and baking, and the description is omitted here.

In the drawing section 114, the linear semiconductor material 30 provided with the resist film 37 is exposed to an electron beam based on the first circuit pattern and then developed. As a result, an unetched portion of the resist film 37 is left (see FIG. 5B). The configuration of the drawing unit 114 will be described later.

In the etching section 116, an etching solution such as an acid is sprayed toward the linear semiconductor material 30 on which the first circuit pattern is drawn, and the exposed portion of the nitride film layer 35 is removed. As a result, a thin film layer corresponding to the first circuit pattern is generated (see FIG. 5C). After that, the resist film 37 is removed (see FIG. 5D). Conventionally known methods are used for etching and resist film removal,
Here, the description is omitted.

In the post-processing unit 118, a field oxidation process, a nitride film etching process, an oxide film etching process, a gate oxidation process, a polysilicon deposition process, and the like are performed. These processes are conventionally known, and description thereof is omitted here.

In the post-processing section of each pattern forming apparatus, various processes are performed on the linear semiconductor material 30 according to the respective stages. For example, the second pattern forming apparatus 12
0, a source / drain formation process, a phosphorus glass deposition process, and the like are performed.
In the post-processing section 138, aluminum is deposited.

The linear semiconductor material 30 on which the thin film layer corresponding to the first circuit pattern has been formed through the above processing is supplied to the second circuit pattern forming apparatus 120, and the thin film material corresponding to the first circuit pattern is provided. A thin film layer corresponding to the second circuit pattern is further formed outside the layer. By repeating the circuit pattern forming process n times in this manner, n thin film layers corresponding to each circuit pattern are generated in the linear semiconductor material 30. The linear semiconductor material 30 having n thin film layers is used as a linear semiconductor 50 as a winding drum 104.
It is wound up.

The second circuit pattern forming apparatus 120 and the third circuit pattern forming apparatus 130 have basically the same configuration as the first circuit pattern forming apparatus 110, and the corresponding components have the same reference numerals. 10, 20 are shown added.

The linear semiconductor 50 wound on the winding drum 104 is transported by the transfer device 300 to the semiconductor device assembling apparatus 2.
00 (see FIG. 2). Semiconductor device assembly equipment 2
At 00, it is cut to a predetermined length, for example, 105 mm. The semiconductor device 40 shown in FIG. 1 is obtained by combining 62,500 105-mm linear semiconductors 50 in a lattice shape.

The configuration and operation of the drawing unit 114 will be described with reference to FIGS. FIG. 6 is a perspective view schematically showing the configuration of the drawing unit 114, and FIG. 7 is a front view of the electron beam drawing apparatus 140 viewed from the axial direction. In FIG. 7, a number of the small electron guns 154 are partially omitted.

The drawing unit 114 includes an electron beam drawing device 140 for drawing, and two pairs of rollers 142 and 144 provided on both sides of the electron beam drawing device 140.
The rollers 142 and 144 are driven to rotate by the first and second driving units 146 and 148, respectively, and move the linear semiconductor material 30 at a constant speed. In order to simplify the drawing, the rollers sandwich the linear semiconductor material 30 only in one-dimensional direction. However, actually, a plurality of pairs of rollers are provided, and the linear semiconductor material 30 is two-dimensional perpendicular to the longitudinal direction. Direction.

The drawing control section 150 is controlled by the control device 107 (see FIG. 4). Raster data is generated in the drawing control unit 150 according to the first circuit pattern,
On / off of the electron beam is controlled based on the raster data. When the electron beam is on, the resist film 37 is exposed, and when the electron beam is off, the resist film 37 is not exposed.

A drawing operation of the electron beam drawing apparatus 140;
The feeding operation of the linear semiconductor material 30 by the first and second driving units 146 and 148 is controlled by the drawing control unit 150, and based on the data processing speed and the like, the scanning speed of the electron beam and the linear semiconductor material. A feed speed of 30 is determined.

The electron beam writing apparatus 140 has a cylindrical hole 152.
The linear semiconductor material 30 is drawn by an electron beam output based on the first circuit pattern when passing through the inside of the cylindrical hole 152. The diameter of the cylindrical hole 152 is larger than the diameter of the linear semiconductor material 30 by about 10 nm to 1000 nm. The diameter of the cylindrical hole 152 may be mechanically changed according to the passage of the linear semiconductor material 30.

The electron beam writing apparatus 140 is a small electron gun 1
It is configured by arranging 64 in the circumferential direction. Each of the small electron guns 154 irradiates the cylindrical hole 152 with an electron beam, thereby scanning a range of 1/64 in the circumferential direction of the linear semiconductor material 30. In the linear semiconductor material 30, the range α scanned by one microelectron gun 154 is a circumferential surface having a central angle of about 5.6 degrees,
In FIG. 6, hatching is applied.

FIG. 8 is a diagram showing the internal configuration of the micro electron gun 154. Metal plate 1 is placed between adjacent micro electron guns 154.
56 are arranged, and the electric fields of the small electron gun 154 are cut off from each other. Thermoelectrons are generated in the filament 158,
On / off of the electron beam is switched in the switch electrode 160 according to the raster data of the first circuit pattern. For example, a carbon nanotube is used for the filament 158.

The electron beam is converged by the electron lens 162. A rectangular filter 164 is provided on the electron lens 162 side from the converging portion, and the spot shape of the electron beam is formed into a rectangular shape by the rectangular filter 164. Further, the beam diameter of the electron beam is narrowed down by the electron lenses 166 and 168 and guided to the deflector 170. The electron beam is deflected along the circumferential direction by the deflector 170. As described above, the range α in the linear semiconductor material 30 is drawn by raster scanning.

As described above, the semiconductor circuit forming apparatus 100 of the present embodiment writes a circuit pattern while moving the linear semiconductor material 30 at a constant speed. The time can be reduced as compared with the circuit forming step.

In the conventional semiconductor device using a flat wafer, a circuit is provided only on one surface of the wafer. In the semiconductor device 40 using the linear semiconductor 50, the linear semiconductor 5 is used.
A circuit can be formed on the entire outer peripheral surface of the circuit, and the effective area for forming the circuit is larger than that of the related art. Therefore, the linear semiconductor 5
When 0 is used, the size of a semiconductor device having the same capability as that of a conventional semiconductor device can be reduced. Further, by reducing the size of the semiconductor device, the signal delay time in the semiconductor device can be reduced, and high-speed operation can be performed.

Conventionally, a large-sized apparatus was required to form silicon having a large diameter of about 200 mm. However, the semiconductor circuit forming apparatus of this embodiment handles linear silicon having a diameter of about 5 mm or less. The size of the apparatus can be remarkably reduced as compared with the above, and the speed of various processes can be increased. In addition, when a continuous linear semiconductor material 30 is used in manufacturing a semiconductor device, various processes conventionally performed intermittently can be performed continuously, thereby reducing the cost of the entire manufacturing process and reducing the manufacturing cost. Time can be reduced.

Furthermore, in the conventional liquid phase epitaxial growth process, the silicon solution is filled after the wafers are arranged in a furnace, but in the present embodiment, the silicon solution tank is placed on the linear semiconductor material 30 on the moving path. Is provided, and the linear semiconductor material 30 may be passed through the silicon solution, so that the growth process is easier and the time required for the process is reduced.

In this embodiment, an electron beam is used as a scanning beam, but a laser beam or an ion beam may be used as a scanning beam.

When a laser beam, for example, an excimer laser is used as the scanning beam, a circuit may be formed using an ablation technique using a polyethylene organic film instead of the resist film.

When an ion beam is used as the scanning beam, the linear semiconductor material is irradiated with an ion beam using, for example, argon, beryllium, silicon or the like as an ion source using an ion focusing lens and a deflector. In this case, a polymer organic resist is used as the resist, and development is performed by oxygen dry etching. The resist is PMMA (Polymethylmethacrylate) which is a negative resist, or CMS (Polychloromethylacrylate) which is a positive resist.
styrene).

The wire diameter of the linear semiconductor material 30 is 260 μm in the present embodiment, but is not limited to this. And a wire diameter that allows a short-time heat treatment, for example, about 5 mm or less.

[0058]

According to the present invention, by making the shape of a semiconductor material linear, it is possible to reduce the size of the device and to make each process continuous, thereby reducing the overall cost of the semiconductor device manufacturing process and reducing the manufacturing cost. Time can be reduced.

[Brief description of the drawings]

FIG. 1 is a perspective view showing a semiconductor device obtained by using a semiconductor circuit forming apparatus according to an embodiment of the present invention, with a part thereof cut away.

FIG. 2 is a block diagram showing a step of manufacturing the semiconductor device shown in FIG.

3 is a simplified cross-sectional view showing the configuration of the semiconductor material manufacturing apparatus shown in FIG.

4 is a diagram showing a semiconductor circuit forming apparatus according to an embodiment of the present invention, and is a simplified block diagram showing a configuration of the semiconductor circuit forming apparatus shown in FIG. 2;

FIG. 5 is a cross-sectional view showing a linear semiconductor material after each processing in the first circuit pattern forming apparatus shown in FIG.

FIG. 6 is a perspective view illustrating a configuration of a drawing unit illustrated in FIG. 4;

7 is a plan view of the electron beam writing apparatus shown in FIG. 6 as viewed from an axial direction.

8 is a cross-sectional view showing a part of the electron beam writing apparatus shown in FIG. 6 and showing an internal configuration.

[Explanation of symbols]

 Reference Signs List 30 linear semiconductor material 40 semiconductor device 50 linear semiconductor 100 semiconductor circuit forming device 102 supply drum 104 winding drum 107 control device 110, 120, 130 circuit pattern forming device 114, 124, 134 drawing portion 140 electron beam drawing device 142, 144 Roller 150 Drawing control unit 152 Cylindrical hole 154 Micro electron gun

Claims (10)

[Claims] 1. An apparatus for forming a circuit pattern on an outer peripheral surface of a linearly formed semiconductor material, comprising: moving means for moving the linear semiconductor material in a longitudinal direction; and the line moved by the moving means. And a drawing means for drawing a circuit pattern using a scanning beam on an outer peripheral surface of the semiconductor device. 2. The method according to claim 1, wherein the scanning beam is an electron beam, and the circuit pattern is drawn on an outer peripheral surface of the linear semiconductor material by scanning of the drawing means with the electron beam. Semiconductor circuit forming apparatus. 3. The scanning beam is a laser beam,
By the scanning of the drawing unit with the laser beam,
2. The semiconductor circuit forming apparatus according to claim 1, wherein the circuit pattern is drawn on an outer peripheral surface of the linear semiconductor material. 4. The scanning beam is an ion beam,
By scanning the drawing means with the ion beam,
2. The semiconductor circuit forming apparatus according to claim 1, wherein the circuit pattern is drawn on an outer peripheral surface of the linear semiconductor material. 5. The drawing means comprises a plurality of beam emitting means for emitting the scanning beams from different directions toward the linear semiconductor material, and the plurality of scanning beams cause the outer peripheral surface of the linear semiconductor material to rotate. 2. The semiconductor circuit forming apparatus according to claim 1, wherein scanning is performed while being divided in directions. 6. The semiconductor circuit forming apparatus according to claim 5, wherein said plurality of beam emitting means are arranged annularly in a plane perpendicular to a longitudinal direction of said linear semiconductor material. 7. The semiconductor circuit forming apparatus according to claim 1, wherein the linear semiconductor material has a circular cross section perpendicular to the longitudinal direction. 8. The semiconductor circuit forming apparatus according to claim 1, wherein said moving means moves said linear semiconductor material at a constant speed. 9. A thin film layer forming means provided on a moving path of the linear semiconductor material by the moving means and forming a thin film layer on an outer peripheral surface of the linear semiconductor material, and the thin film layer on the moving path. A protection film forming means provided at a subsequent stage of the forming means and forming an etching protection film outside the thin film layer of the linear semiconductor material obtained by the thin film layer forming means; and forming the protection film on the moving path. A drawing unit that is provided at a subsequent stage of the unit and selectively removes the etching protection film according to the circuit pattern by scanning the etching protection film with the scanning beam; and the drawing unit on the movement path. An etching means provided at a subsequent stage, for removing an exposed thin film layer by etching; and a subsequent stage of the etching means on the moving path. Provided, the semiconductor circuit forming apparatus according to claim 1, characterized in that it comprises a protective film removing means for removing all the etching protective film of the linear semiconductor material. 10. The moving means comprises: a supply drum provided before the thin film layer forming means on a moving path of the linear semiconductor material; and a winding drum provided after the protective film removing means. 10. The semiconductor circuit forming apparatus according to claim 9, wherein the linear semiconductor material is continuous between the supply drum and the winding drum.