JP2000003782A - Electroluminescent element - Google Patents

Electroluminescent element

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Publication number
JP2000003782A
JP2000003782A JP17979198A JP17979198A JP2000003782A JP 2000003782 A JP2000003782 A JP 2000003782A JP 17979198 A JP17979198 A JP 17979198A JP 17979198 A JP17979198 A JP 17979198A JP 2000003782 A JP2000003782 A JP 2000003782A
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spacer
element
formed
board
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Japanese (ja)
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Kazuyoshi Arai
一能 新井
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Casio Comput Co Ltd
カシオ計算機株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5237Passivation; Containers; Encapsulation, e.g. against humidity
    • H01L51/524Sealing arrangements having a self-supporting structure, e.g. containers
    • H01L51/5246Sealing arrangements having a self-supporting structure, e.g. containers characterised by the peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5237Passivation; Containers; Encapsulation, e.g. against humidity
    • H01L51/524Sealing arrangements having a self-supporting structure, e.g. containers
    • H01L51/525Vertical spacers, e.g. arranged between the sealing arrangement and the OLED

Abstract

PROBLEM TO BE SOLVED: To provide an electroluminescent element which restricts the deterioration of the element due to moisture and oxygen.
SOLUTION: A transparent electrode 12, an organic electroluminescent layer 13, a back surface electrode 14 are formed on a transparent board 11 so as to form a light-emitting unit. A sealing board 15 is provided on the transparent board 11 via a spacer 16 for surrounding a light-emitting region. The spacer 16 is formed by patterning a SiO2 film deposited on the sealing board 15 and formed integrally with the sealing board 15. The spacer 16 and the transmitting board 11 are strongly bonded to each other through an adhesive layer 17 of silane-coupling agent. With this structure, since moisture permeability of the spacer 16 made of the inorganic insulating material and the adhesive layer 17 is low and infiltration of moisture and oxygen from the outside of the electroluminescent element 10 can be hindered, the deterioration of the element can be restricted.
COPYRIGHT: (C)2000,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】この発明は電界発光素子に関し、さらに詳しくは、有機エレクトロルミネッセンス(以下、有機ELという)材料を発光層に含む電界発光素子の封止構造に関する。 It relates BACKGROUND OF THE INVENTION The present invention electroluminescent device, and more particularly, an organic electroluminescence (hereinafter, organic EL hereinafter) regarding the sealing structure of an electroluminescent device comprising the material in the light emitting layer.

【0002】 [0002]

【従来の技術】従来の電界発光素子としては、透明電極、発光層、及び背面電極が積層されてなる発光部が形成されたガラス基板と、封止用ガラス基板との2枚を、 As a conventional electroluminescent device, a transparent electrode, light emitting layer, and a glass substrate having the light emitting portion is formed in which the back electrode are laminated, the two glass substrates for sealing,
液晶セル構造と同様に、ギャップ材を混入させた樹脂でなるシール材を介して貼り合わせた構造のものがある。 Similar to the liquid crystal cell structure, there is a combined structure bonded via a sealing material comprising a resin obtained by mixing a gap material.
これらガラス基板と封止用ガラス基板とシール材とで形成される空隙内には、不活性ガスが封入されている。 These glass substrate door sealing use glass substrate door seal wood door de formed is void inner second tooth, inert gas moth encapsulated hand there.

【0003】 [0003]

【発明が解決しようとする課題】しかしながら、上記した従来の電界発光素子では、シール材を構成する樹脂が僅かながら透湿性を有するために、時間の経過とともに、水分、酸素が外部から浸入するという問題点があった。 [SUMMARY OF THE INVENTION However, in the conventional electroluminescent device described above, in the resin constituting the sealing member has a slightly breathable, over time, moisture, that oxygen from entering from the outside there is a problem. このように外部から浸入した水分や酸素と発光層材料や電極材料とが反応することにより、部分的に非点灯エリアが発生して素子劣化が起こるという問題点がある。 By thus the penetration moisture or oxygen from the outside a light emitting layer material and the electrode material are reacted partially non-lighting area there is a problem that element degradation occurs occurred. そこで、透湿性のより低い樹脂材料を用いて貼り合わせを行うことが考えられる。 Therefore, it is considered that bonding is performed using a lower resin material breathable. しかし、このような透湿性の低い樹脂材料を使用して両ガラス基板どうしの貼り合わせを行った場合、貼り合わせた後に、樹脂特性に起因して素子の耐熱温度を上回る熱処理プロセスが必要となるため、その使用は不可能であった。 However, in the case of performing the bonding of the two glass substrates to each other using a low resin material such moisture permeability, after bonding, it is necessary to heat treatment process due to the resin properties than the heat resistant temperature of the device Therefore, its use was not possible.

【0004】この発明は、水分、酸素に起因する素子劣化を抑制できる電界発光素子を提供することを目的としている。

【0005】

【課題を解決するための手段】請求項1記載の発明は、
電界発光素子であって、表面に発光層が電極で挟まれてなる発光部が形成される素子基板と、無機絶縁材料でなるスペーサを有し前記素子基板の表面に対向する封止用基板とが、前記スペーサ、並びに前記スペーサと前記素子基板との間に介在された接着層を介して接合されていることを特徴としている。 A light emitting element, an element substrate having a light emitting portion emitting layer is sandwiched by the electrode is formed on the surface, a sealing substrate opposed to a surface of the element substrate has a spacer made of an inorganic insulating material and but the spacer, and is characterized in that it is bonded via the interposed adhesion layer between the element substrate and the spacer.

【0006】請求項1記載の発明では、発光部を包囲するスペーサを構成する無機絶縁材料が極めて透湿性が低い材料でなるため、外部からの水分や酸素の侵入を大幅に抑制することができ、素子劣化を抑制することができる。 [0006] In the first aspect of the present invention, since the inorganic insulating material constituting the spacer surrounding the light emitting portion becomes an extremely moisture permeability is low material, it is possible to greatly suppress the penetration of moisture or oxygen from the outside , it is possible to suppress the deterioration of the device.

【0007】請求項2記載の発明は、請求項1記載の電界発光素子であって、前記接着層が、シランカップリング剤よりなることを特徴としている。 [0007] According to a second aspect of the invention, a light emitting device according to claim 1, wherein the adhesive layer is, is characterized by consisting of a silane coupling agent.

【0008】請求項2記載の発明では、請求項1記載の発明の作用に加えて、スペーサと素子基板との密着性、 [0008] In the present invention of claim 2, wherein, in addition to the operation of the first aspect, adhesiveness between the spacer and the element substrate,
接着強度を大きく向上させる作用がある。 It has the effect of improving the adhesion strength increases.

【0009】請求項3記載の発明は、請求項1及び請求項2に記載の発明の作用に加えて、スペーサが封止用基板に成膜された密着性の高い無機絶縁材料膜をエッチングしてなるため、スペーサと封止用基板との密着性及び接着強度が高く、外部から水分や酸素が侵入を防止する作用がある。 [0009] According to a third aspect, in addition to the operation of the invention described in claims 1 and 2, the spacer is etched high inorganic insulating material film adhesiveness, which is deposited on the substrate for sealing to become Te, adhesion and bonding strength between the spacer and the sealing substrate is high, moisture or oxygen from the outside has the effect of preventing the intrusion.

【0010】請求項3記載の発明は、請求項1及び請求項2に記載の電界発光素子であって、前記発光層は、有機エレクトロルミネッセンス材料を含むことを特徴としている。 [0010] according to claim 3, wherein Roh invention leaves, according to claim 1 Oyobi claim 2 two-described Roh light emitting element out there hand, the light-emitting layer leaf, organic electroluminescent material wo including the ancient capital wo feature door to hand there.

【0011】請求項3記載の発明では、スペーサを封止用基板に予め形成することにより、素子基板に形成された有機エレクトロルミネッセンス材料を含む発光層の耐熱温度を考慮する必要がない。 [0011] In the third aspect of the present invention, by previously forming a spacer in the sealing substrate, it is not necessary to consider the heat resistance temperature of the light emitting layer containing an organic electroluminescent material formed on the element substrate. このため、成膜温度が高い材料をスペーサの材料として選択することが可能となる。 Therefore, it is possible to select the film formation temperature is high material as the material of the spacer.

【0012】 [0012]

【発明の実施の形態】以下、この発明に係る電界発光素子の詳細を図面に示す実施形態に基づいて説明する。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, will be explained based on the embodiment showing details of an electroluminescent device according to the invention with reference to the drawings. 図1は本実施形態の電界発光素子の平面図、図2は図1のA−A断面図である。 Figure 1 is a plan view of the electroluminescent device of the present embodiment, FIG. 2 is an A-A sectional view of FIG.

【0013】図1及び図2に示すように、ガラスでなる素子基板としての透明基板11の上に、ITO(indium [0013] As shown in FIGS. 1 and 2, on a transparent substrate 11 as an element substrate made of glass, ITO (indium
tin oxide)またはIn 23 (ZnO) m (但しm> tin oxide) or In 2 O 3 (ZnO) m ( where m>
0)でなる複数の透明電極12が平行に配置・形成されている。 A plurality of transparent electrodes 12 consisting of 0) are arranged parallel to and formation. これら透明電極12は、駆動素子との接続に供されるように透明基板11の一辺に向けて延在されている。 These transparent electrodes 12 are extended toward one side of the transparent substrate 11 so as to be subjected to the connection of the drive element. 透明電極12が形成された透明基板11の表示領域上には、有機EL層13が形成されている。 The transparent electrode 12 is formed transparent substrate 11 of the display area, the organic EL layer 13 is formed. 本実施形態では、この有機EL層13として、下層から順に、N,N' In the present embodiment, as the organic EL layer 13, in order from the lower layer, N, N '
-ジ(α-ナフチル)-N,N'-ジフェニル-1,1'-ビフェニル - di (alpha-naphthyl) -N, N'-diphenyl-1,1'-biphenyl
-4,4'-ジアミン(以下、α−NPDという)からなる有機正孔輸送層、4,4'-ビス(2,2'-ジフェニルビニレン) -4,4'-diamine (hereinafter, referred to as alpha-NPD) organic hole-transporting layer made of 4,4'-bis (2,2'-diphenyl vinylene)
ビフェニル(以下、DPVBiという)96wt%と、 Biphenyl (hereinafter referred to as DPVBi) and 96wt%,
4,4'-ビス(2-カルバゾールビニレン)ビフェニル(以下、BCzVBiという)4wt%とからなる有機発光層、トリス(8-ヒドロキシキノリン)アルミニウム(以下、Alq3という)からなる有機電子輸送層の3層が順次積層されてなる。 4,4'-bis (2-carbazole vinylene) biphenyl organic light-emitting layer consisting of 4 wt% (hereinafter, referred BCzVBi), tris (8-hydroxyquinoline) aluminum (hereinafter Alq3 hereinafter) 3 organic electron-transporting layer made of layers, which are sequentially stacked. なお、有機EL層13は、単層構造や多層構造の各種の変更が可能である。 The organic EL layer 13 may be various changes in the single-layer structure or multilayer structure. この有機EL The organic EL
層13の上には、透明電極12と交差する方向に沿って複数の背面電極14が平行に形成されている。 On the layer 13, a plurality of back electrodes 14 along a direction intersecting the transparent electrodes 12 are formed in parallel. 背面電極14は、例えばAl、Ag、In、-Mgの単体またはこれらのうちの少なくとも1種から選択される合金で形成されている。 Back electrode 14, for example Al, Ag, an In, is formed of an alloy selected from single or at least one of these -Mg. これら背面電極14の端子には、例えば透明電極12などの酸素、水に対し導電率を下げにくい導電性材料でなる端子配線14Aが接続されている。 These terminal on the rear electrode 14, such as oxygen, such as the transparent electrode 12, terminal wiring 14A made of a hard conductive material to lower the conductivity to water is connected. なお、これら端子配線14Aは、透明基板11における、 Note that these terminal wiring 14A is in the transparent substrate 11,
透明電極12が延在された一辺と隣接する一辺に向けて延在されている。 It is extended toward one adjacent to the side where the transparent electrode 12 is extended.

【0014】上記した構成の透明基板11に対して、ガラスでなる封止用基板15が設けられている。 [0014] For the transparent substrate 11 having the above configuration, the sealing substrate 15 made of glass is provided. この封止用基板15の透明基板11と対向する面の周縁部には、 The peripheral portion of the surface facing the transparent substrate 11 of the sealing substrate 15,
酸化シリコン(SiO 2 )でなる厚さが1μm〜3μm Thick made of silicon oxide (SiO 2) 1μm~3μm
程度のスペーサ16が周回して形成されている。 The extent of the spacer 16 is formed by circling. SiO SiO
2は、透湿性が極めて低い無機絶縁材料であり、その厚さは、積層された透明電極12、有機EL層13及び背面電極14のそれぞれの厚さの和より大きい。 2 is a very low inorganic insulating material is breathable and has a thickness greater than the sum of the respective thicknesses of the laminated transparent electrode 12, the organic EL layer 13 and the back electrode 14. このスペーサ16と透明基板11とが、接着層17を介して接着されている。 The spacer 16 and the transparent substrate 11 is bonded via the adhesive layer 17. この接着層17は、γ-(2-アミノエチル)アミノプロピルトリメトキシシラン、γ-(2-アミノエチル)アミノプロピルメチルジメトキシシラン、γ The adhesive layer 17, .gamma. (2-aminoethyl) aminopropyl trimethoxysilane, .gamma. (2-aminoethyl) aminopropyl methyl dimethoxy silane, gamma
-グリシドキシプロピルトリメトキシシラン、γ-グリシドキシプロピルメチルジメトキシシランなどの紫外線硬化性のシランカップリング剤でなり、スペーサ16と透明基板11とを強固に接着することができる。 - glycidoxypropyltrimethoxysilane, .gamma.-glycidoxypropyltrimethoxysilane becomes propyl ultraviolet curable silane coupling agent such as methyldimethoxysilane, and the spacer 16 and the transparent substrate 11 can be firmly bonded. また、このようなシランカップリング剤でなる接着層17は、透湿性が極めて低いという特性があり、紫外線で固着するので透明基板11と封止用基板15との接合時に有機E The adhesive layer 17 made of such a silane coupling agent, there is a characteristic that a very low moisture permeability, organic E at the time of bonding the transparent substrate 11 and the sealing substrate 15 so fixed by UV
L層13を熱により劣化させることがない。 It is not deteriorated by heat L layer 13. また、透明基板11側と封止用基板15とスペーサ16とで形成された空隙18には、アルゴン等の不活性ガスが封入されている。 In addition, the gap 18 formed in the transparent substrate 11 side and the sealing substrate 15 and the spacer 16, an inert gas such as argon is sealed. なお、透明電極12の端子部分と背面電極14 Incidentally, the rear terminal portion of the transparent electrode 12 electrode 14
に接続された端子配線14Aとは、図1及び図2に示すようにスペーサ16の外側に位置するように設定されている。 In The connected terminal wires 14A, is configured to be positioned outside of the spacer 16 as shown in FIGS. なお、本実施形態では、スペーサ16の端面に透明電極12の端子部分や端子配線14Aが通る凹部を形成したが、これらの電極配線は薄い膜厚であり、接着層17を設けることによりスペーサ16と透明基板11との隙間を埋めることができるため、敢えて凹部を形成しない構成としてもよい。 In the present embodiment has formed the recesses through the terminal portion and the terminal wiring 14A of the end surface on the transparent electrode 12 of the spacer 16, these electrode wiring is a thin film thickness, the spacers 16 by providing the adhesive layer 17 it is possible to fill the gap between the transparent substrate 11 and may be dare not form a concave configuration.

【0015】次に、封入用基板15にスペーサ16を形成する方法を説明する。 [0015] Next, a method of forming a spacer 16 to the encapsulation substrate 15. まず、図3(a)に示すように、封入用基板15として切断する前のマザーボード1 First, as shown in FIG. 3 (a), before cutting the sealed substrate 15 a motherboard 1
5Aの表面にスペーサ16の高さ寸法と同一の膜厚寸法の1μm〜3μm程度のSiO 2膜16Aを例えばCV SiO 2 film 16A, for example CV of about 1μm~3μm height dimension of the same thickness dimension of the spacer 16 to the surface of 5A
D法により堆積させる。 Deposited by D method. その後、フォトリソグラフィー技術を用いてスペーサ16を形成すべき部分にレジスト19が残るように形成する。 Thereafter, the resist 19 is formed so as to remain in the portion for forming the spacer 16 by using a photolithography technique. そして、このレジスト19 Then, the resist 19
をマスクとしてSiO2マスク16Aをエッチング(ドライエッチング又はウェットエッチング)する。 The SiO2 mask 16A is etched (dry etching or wet etching) as a mask. その後、レジスト19を剥離し、図3(b)に破線で示す位置(スクライブライン)で切断することにより、スペーサ16が形成された封入用基板15を形成することができる。 Thereafter, the resist 19 is peeled off, by cutting at the position (scribe lines) indicated by a broken line in FIG. 3 (b), it is possible to form the encapsulating substrate 15 where the spacer 16 is formed.

【0016】本実施形態の電界発光素子10は、封止用基板15と透明基板11との間をほとんどスペーサ16 The electroluminescent device 10 of the present embodiment, almost between the sealing substrate 15 and the transparent substrate 11 the spacer 16
で封止されている構造であり、このスペーサ16の酸素及び水の透過性は極めて低い。 このため、外部から電界発光素子10内の有機EL層13が形成された発光領域(表示領域)へ水分や酸素が侵入するのを防止することができ、水分や酸素に起因する素子劣化を抑制することができる。このため、外部から電界発光素子10内の有機EL層13が形成された発光領域(表示領域)へ水分や酸素が侵入するのを防止することができ、水分や酸素に起因する素子劣化を抑制can do.また、このように透湿性が低い無機絶縁材料でなるスペーサ16を封入用基板15側に予め形成しておくことができるため、素子の耐熱温度を考慮する必要がなく、スペーサ16の材料の選択の幅を広げることができる。特に、本実施形態で用いたシランカップリング剤は、分子中の反応基によりスペーサ16側と透明基板11側とに強固に結合する作用があり、封止用基板15
側を強く固着することができ、電界発光素子10の発光部を保護する効果を高めている。 It can be secured strongly side, to enhance the effect of protecting the light emitting portion of the light emitting element 10.

【0017】以上、実施形態について説明したが、本発明はこれに限定されるものではなく、構成の要旨に付随する各種の変更が可能である。 [0017] Although embodiments have been described, the present invention is not limited thereto, and can be various modifications associated with the gist of the structure. 例えば、上記した実施形態では、スペーサ16をSiO 2で形成したが、TiO 2 For example, in the above embodiment has formed the spacers 16 in SiO 2, TiO 2
などの他の無機絶縁材料で形成してもよい。 It may be formed of another inorganic insulating material, such as.また、上記した実施形態では、封入用基板15をガラスで形成したが、セラミックスなどの不透明な材料で形成してもよい。また、上記した実施形態では、接着層17にシランカップリング剤を用いたが、透湿性の低い他の接着剤を用いてもよい。さらに、上記した実施形態では、発光部からの光が透明基板11を通過して表示光となるが、逆に表示光が封止用基板15を通過して表示を行う構成としてもよい。

【0018】 [0018]

【発明の効果】以上の説明から明らかなように、この発明によれば、水分、酸素に起因する素子劣化を抑制した電界発光素子を実現できる。また、電界発光素子の封止構造を堅牢にすることが可能となり、素子の耐久性を向上することができる。 さらに、封止用基板にスペーサを形成する際には、素子の耐熱温度を考慮する必要がないため、スペーサの材料選択の幅を広げることが可能となる。 Further, in forming the spacer in the sealing substrate is not necessary to consider the heat resistance temperature of the element, it is possible to widen the material selection of the spacer.

【図面の簡単な説明】

【図1】本発明に係る電界発光素子の実施形態を示す平面図。

【図2】図1のA−A断面図。

【図3】(a)及び(b)は、封止用基板とスペーサの形成方法を示す工程断面図。

【符号の説明】

10 電界発光素子 11 透明基板 12 透明電極 13 有機EL層 14 背面電極 15 封止用基板 16 スペーサ 17 接着層 18 空隙 10 EL device 11 transparent substrate 12 transparent electrode 13 organic EL layer 14 back electrode 15 sealing substrate 16 the spacer 17 adhesive layer 18 gap

Claims (3)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 表面に発光層が電極で挟まれてなる発光部が形成される素子基板と、無機絶縁材料でなるスペーサを有し前記素子基板の表面に対向する封止用基板とが、前記スペーサ、並びに前記スペーサと前記素子基板との間に介在された接着層を介して接合されていることを特徴とする電界発光素子。 An element substrate having a light emitting portion for emitting layer 1. A surface becomes sandwiched by electrodes are formed, a sealing substrate opposed to a surface of the element substrate has a spacer made of an inorganic insulating material, It said spacer, and electroluminescent element characterized in that it is bonded through an adhesive layer interposed between the element substrate and the spacer.
  2. 【請求項2】 前記接着層は、シランカップリング剤よりなることを特徴とする請求項1記載の電界発光素子。 Wherein said adhesive layer is an electroluminescent device according to claim 1, characterized in that consisting of a silane coupling agent.
  3. 【請求項3】 前記発光層は、有機エレクトロルミネッセンス材料を含むことを特徴とする請求項1又は請求項2に記載の電界発光素子。 Wherein the light-emitting layer, the electroluminescent device according to claim 1 or claim 2, characterized in that it comprises an organic electroluminescent material.
JP17979198A 1998-06-12 1998-06-12 Electroluminescent element Pending JP2000003782A (en)

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JP17979198A JP2000003782A (en) 1998-06-12 1998-06-12 Electroluminescent element

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