ITMI951818D0 - power MOSFET with overcurrent protection and high temperature and control circuit decoupled from the diode of the base structure - Google Patents

power MOSFET with overcurrent protection and high temperature and control circuit decoupled from the diode of the base structure

Info

Publication number
ITMI951818D0
ITMI951818D0 ITMI951818A ITMI951818D0 IT MI951818 D0 ITMI951818 D0 IT MI951818D0 IT MI951818 A ITMI951818 A IT MI951818A IT MI951818 D0 ITMI951818 D0 IT MI951818D0
Authority
IT
Italy
Prior art keywords
diode
control circuit
high temperature
base structure
overcurrent protection
Prior art date
Application number
Other languages
Italian (it)
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US08/298,383 priority Critical patent/US5550701A/en
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of ITMI951818D0 publication Critical patent/ITMI951818D0/en
Publication of ITMI951818A1 publication Critical patent/ITMI951818A1/en
Application granted granted Critical
Publication of IT1282940B1 publication Critical patent/IT1282940B1/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7803Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K2017/0806Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
ITMI951818 1994-08-30 1995-08-29 power MOSFET with overcurrent protection and high temperature and decoupled from the control circuit of the diode IT1282940B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US08/298,383 US5550701A (en) 1994-08-30 1994-08-30 Power MOSFET with overcurrent and over-temperature protection and control circuit decoupled from body diode

Publications (3)

Publication Number Publication Date
ITMI951818D0 true ITMI951818D0 (en) 1995-08-29
ITMI951818A1 ITMI951818A1 (en) 1996-02-29
IT1282940B1 IT1282940B1 (en) 1998-04-02

Family

ID=23150264

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI951818 IT1282940B1 (en) 1994-08-30 1995-08-29 power MOSFET with overcurrent protection and high temperature and decoupled from the control circuit of the diode

Country Status (7)

Country Link
US (1) US5550701A (en)
JP (1) JP2988859B2 (en)
DE (1) DE19530664C2 (en)
FR (1) FR2725306A1 (en)
GB (1) GB2292834B (en)
IT (1) IT1282940B1 (en)
SG (1) SG34262A1 (en)

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EP0808420B1 (en) * 1995-02-03 1999-04-07 Robert Bosch Gmbh Starting device for an internal combustion engine
US5563759A (en) * 1995-04-11 1996-10-08 International Rectifier Corporation Protected three-pin mosgated power switch with separate input reset signal level
US5798538A (en) * 1995-11-17 1998-08-25 International Rectifier Corporation IGBT with integrated control
US5761020A (en) * 1996-01-29 1998-06-02 International Rectifier Corporation Fast switching smartfet
DE19745040C2 (en) 1997-02-10 2003-03-27 Daimler Chrysler Ag Arrangement and method for measuring a temperature
US6066971A (en) * 1997-10-02 2000-05-23 Motorola, Inc. Integrated circuit having buffering circuitry with slew rate control
JP3758366B2 (en) * 1998-05-20 2006-03-22 富士通株式会社 Semiconductor device
EP0977264B1 (en) * 1998-07-31 2006-04-26 Freescale Semiconductor, Inc. Semiconductor structure for driver circuits with level shifting
US6115151A (en) * 1998-12-30 2000-09-05 Digilens, Inc. Method for producing a multi-layer holographic device
EP1049165B1 (en) * 1999-04-30 2002-09-11 STMicroelectronics S.r.l. Integrated circuit structure comprising a power circuit portion and a control circuit portion, without parasitic currents
JP3660566B2 (en) * 2000-06-30 2005-06-15 新電元工業株式会社 Overcurrent limiting semiconductor device
GB2368210A (en) * 2000-10-21 2002-04-24 Trw Ltd Controllable current decay rate for hydraulic brake system solenoids
DE10103336C1 (en) * 2001-01-25 2002-12-05 Dialog Semiconductor Gmbh Charge / discharge protection circuit for a rechargeable battery
DE10123818B4 (en) * 2001-03-02 2006-09-07 Infineon Technologies Ag Arrangement with protective function for a semiconductor component
DE10137875C1 (en) * 2001-08-02 2003-04-30 Dialog Semiconductor Gmbh Charge / discharge protection circuit
JP2003100899A (en) * 2001-09-27 2003-04-04 Mitsubishi Electric Corp Semiconductor device and its manufacturing method
US6410963B1 (en) * 2001-10-16 2002-06-25 Macronix International Co., Ltd. Electrostatic discharge protection circuits with latch-up prevention function
DE10241156A1 (en) * 2002-09-05 2004-03-18 Infineon Technologies Ag Method for forming integrated pin photodiode forms doped region of one conductivity near to carrier substrate and doped region of second conductivity, further away from carrier substrate, between which is located undoped, or slightly doped
DE10243956A1 (en) * 2002-09-20 2004-04-15 Carl Freudenberg Kg Circuit arrangement for a pulse-width modulated controllable electromagnetic regeneration valve for tank ventilation of a motor vehicle
US8570699B2 (en) 2005-04-22 2013-10-29 Lear Corporation Relayless and fuseless junction box
US7468874B1 (en) 2005-11-08 2008-12-23 Yazaki North America, Inc. Protection circuit for digital power module
US20080062088A1 (en) * 2006-09-13 2008-03-13 Tpo Displays Corp. Pixel driving circuit and OLED display apparatus and electrionic device using the same
US7656634B2 (en) * 2006-11-30 2010-02-02 Hamilton Sundstrand Corporation Increasing the system stability and lightning capability in a power distribution system that utilizes solid-state power controllers
US7511357B2 (en) * 2007-04-20 2009-03-31 Force-Mos Technology Corporation Trenched MOSFETs with improved gate-drain (GD) clamp diodes
US8063516B2 (en) * 2009-01-15 2011-11-22 Microsemi Corporation Four quadrant MOSFET based switch
US8800697B2 (en) 2009-09-01 2014-08-12 Ryno Motors, Inc. Electric-powered self-balancing unicycle with steering linkage between handlebars and wheel forks
US7940505B1 (en) 2009-12-01 2011-05-10 Texas Instruments Incorporated Low power load switch with protection circuitry
JP2015527248A (en) 2012-08-22 2015-09-17 リョーノ モーターズ,インコーポレイテッド Electric self-balancing unicycle
US9413348B2 (en) 2014-07-29 2016-08-09 Semiconductor Components Industries, Llc Electronic circuit including a switch having an associated breakdown voltage and a method of using the same
CN108431945A (en) * 2015-12-28 2018-08-21 罗姆股份有限公司 Semiconductor equipment
KR20180061860A (en) * 2016-11-30 2018-06-08 엘지디스플레이 주식회사 Thin film transistor and display panel using the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008725C2 (en) * 1979-05-14 2001-05-01 Internat Rectifer Corp Plural polygon source pattern for mosfet
JPH01147854A (en) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd Semiconductor device
EP0341482B1 (en) * 1988-05-11 1991-12-11 Siemens Aktiengesellschaft Circuit arrangement for determining the overtemperature of a semiconductor element
US5077521A (en) * 1989-12-26 1991-12-31 Ncr Corporation Supply connection integrity monitor
EP0565807A1 (en) * 1992-04-17 1993-10-20 SGS-THOMSON MICROELECTRONICS S.r.l. MOS power transistor device
EP0631390B1 (en) * 1993-06-22 1999-09-01 Philips Electronics N.V. A power semiconductor circuit
DE4429903B4 (en) * 1993-09-14 2004-02-05 International Rectifier Corp., El Segundo Power semiconductor arrangement with overload protection circuit
US5497285A (en) * 1993-09-14 1996-03-05 International Rectifier Corporation Power MOSFET with overcurrent and over-temperature protection

Also Published As

Publication number Publication date
US5550701A (en) 1996-08-27
ITMI951818A1 (en) 1996-02-29
GB2292834B (en) 1998-09-09
SG34262A1 (en) 1996-12-06
GB9517148D0 (en) 1995-10-25
GB2292834A (en) 1996-03-06
DE19530664A1 (en) 1996-03-07
IT1282940B1 (en) 1998-04-02
JPH08102539A (en) 1996-04-16
DE19530664C2 (en) 1998-10-15
JP2988859B2 (en) 1999-12-13
FR2725306A1 (en) 1996-04-05

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Legal Events

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0001 Granted