IT999819B - Procedimento per la fabbricazione di strutture incise mediante inci sione ionica - Google Patents

Procedimento per la fabbricazione di strutture incise mediante inci sione ionica

Info

Publication number
IT999819B
IT999819B IT70466/73A IT7046673A IT999819B IT 999819 B IT999819 B IT 999819B IT 70466/73 A IT70466/73 A IT 70466/73A IT 7046673 A IT7046673 A IT 7046673A IT 999819 B IT999819 B IT 999819B
Authority
IT
Italy
Prior art keywords
ionic
procedure
manufacture
engraved structures
inci
Prior art date
Application number
IT70466/73A
Other languages
English (en)
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19722258297 external-priority patent/DE2258297C3/de
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT999819B publication Critical patent/IT999819B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/2633Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00Electric solid-state thin-film or thick-film devices, not otherwise provided for

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
IT70466/73A 1972-11-29 1973-11-26 Procedimento per la fabbricazione di strutture incise mediante inci sione ionica IT999819B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722258297 DE2258297C3 (de) 1972-11-29 Verfahren zur Herstellung geätzter Strukturen in Substraten durch ätzenden lonenbeschuB mittels Kathodenzerstäubung

Publications (1)

Publication Number Publication Date
IT999819B true IT999819B (it) 1976-03-10

Family

ID=5862937

Family Applications (1)

Application Number Title Priority Date Filing Date
IT70466/73A IT999819B (it) 1972-11-29 1973-11-26 Procedimento per la fabbricazione di strutture incise mediante inci sione ionica

Country Status (7)

Country Link
US (1) US3904462A (US06878557-20050412-C00065.png)
JP (1) JPS5418227B2 (US06878557-20050412-C00065.png)
CA (1) CA1009607A (US06878557-20050412-C00065.png)
FR (1) FR2208002B1 (US06878557-20050412-C00065.png)
GB (1) GB1414029A (US06878557-20050412-C00065.png)
IT (1) IT999819B (US06878557-20050412-C00065.png)
NL (1) NL7316100A (US06878557-20050412-C00065.png)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016062A (en) * 1975-09-11 1977-04-05 International Business Machines Corporation Method of forming a serrated surface topography
US4340276A (en) * 1978-11-01 1982-07-20 Minnesota Mining And Manufacturing Company Method of producing a microstructured surface and the article produced thereby
JPS55141567A (en) * 1979-03-27 1980-11-05 Norio Taniguchi Working method for sharpening blunted tip
US4241109A (en) * 1979-04-30 1980-12-23 Bell Telephone Laboratories, Incorporated Technique for altering the profile of grating relief patterns
US4278493A (en) * 1980-04-28 1981-07-14 International Business Machines Corporation Method for cleaning surfaces by ion milling
DE3102647A1 (de) * 1981-01-27 1982-08-19 Siemens AG, 1000 Berlin und 8000 München Strukturierung von metalloxidmasken, insbesondere durch reaktives ionenstrahlaetzen
FR2619457B1 (fr) * 1987-08-14 1989-11-17 Commissariat Energie Atomique Procede d'obtention d'un motif notamment en materiau ferromagnetique ayant des flancs de pente differente et tete magnetique comportant un tel motif
CA2097388A1 (en) * 1992-07-16 1994-01-17 Susan Nord Bohlke Topographical selective patterns
US6960510B2 (en) * 2002-07-01 2005-11-01 International Business Machines Corporation Method of making sub-lithographic features
US7207098B2 (en) * 2003-06-27 2007-04-24 Seagate Technology Llc Hard mask method of forming a reader of a magnetic head

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271286A (en) * 1964-02-25 1966-09-06 Bell Telephone Labor Inc Selective removal of material using cathodic sputtering
FR1459616A (fr) * 1964-12-28 1966-04-29 Ibm Procédé pour obtenir des connexions dans les plaques semiconductrices
US3615953A (en) * 1968-12-17 1971-10-26 Bryan H Hill Etch-retarding oxide films as a mask for etching
US3661747A (en) * 1969-08-11 1972-05-09 Bell Telephone Labor Inc Method for etching thin film materials by direct cathodic back sputtering
JPS5146001B2 (US06878557-20050412-C00065.png) * 1971-09-20 1976-12-07
US3791952A (en) * 1972-07-24 1974-02-12 Bell Telephone Labor Inc Method for neutralizing charge in semiconductor bodies and dielectric coatings induced by cathodic etching

Also Published As

Publication number Publication date
CA1009607A (en) 1977-05-03
DE2258297A1 (de) 1974-06-06
US3904462A (en) 1975-09-09
FR2208002B1 (US06878557-20050412-C00065.png) 1976-11-19
JPS5418227B2 (US06878557-20050412-C00065.png) 1979-07-05
NL7316100A (US06878557-20050412-C00065.png) 1974-05-31
GB1414029A (en) 1975-11-12
DE2258297B2 (de) 1975-07-17
FR2208002A1 (US06878557-20050412-C00065.png) 1974-06-21
JPS4983637A (US06878557-20050412-C00065.png) 1974-08-12

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