IT992613B - PROCEDURE FOR PREPARING MONOCRYSTALLINE TE STICKS OF SEMICONDUCTOR MATERIAL WITH ORIENTATION III WITH A SPECIFIC RESISTANCE DECREASING TOWARDS THE CENTER OF THE WAND - Google Patents

PROCEDURE FOR PREPARING MONOCRYSTALLINE TE STICKS OF SEMICONDUCTOR MATERIAL WITH ORIENTATION III WITH A SPECIFIC RESISTANCE DECREASING TOWARDS THE CENTER OF THE WAND

Info

Publication number
IT992613B
IT992613B IT26455/73A IT2645573A IT992613B IT 992613 B IT992613 B IT 992613B IT 26455/73 A IT26455/73 A IT 26455/73A IT 2645573 A IT2645573 A IT 2645573A IT 992613 B IT992613 B IT 992613B
Authority
IT
Italy
Prior art keywords
wand
sticks
procedure
center
semiconductor material
Prior art date
Application number
IT26455/73A
Other languages
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT992613B publication Critical patent/IT992613B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/004—Sight-glasses therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
IT26455/73A 1972-07-13 1973-07-11 PROCEDURE FOR PREPARING MONOCRYSTALLINE TE STICKS OF SEMICONDUCTOR MATERIAL WITH ORIENTATION III WITH A SPECIFIC RESISTANCE DECREASING TOWARDS THE CENTER OF THE WAND IT992613B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2234512A DE2234512C3 (en) 1972-07-13 1972-07-13 Process for the production of (reoriented semiconductor single crystal rods with a specific resistance thawing towards the center of the rod

Publications (1)

Publication Number Publication Date
IT992613B true IT992613B (en) 1975-09-30

Family

ID=5850582

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26455/73A IT992613B (en) 1972-07-13 1973-07-11 PROCEDURE FOR PREPARING MONOCRYSTALLINE TE STICKS OF SEMICONDUCTOR MATERIAL WITH ORIENTATION III WITH A SPECIFIC RESISTANCE DECREASING TOWARDS THE CENTER OF THE WAND

Country Status (10)

Country Link
US (1) US3915660A (en)
JP (1) JPS4953372A (en)
BE (1) BE802326A (en)
CA (1) CA1016847A (en)
DE (1) DE2234512C3 (en)
DK (1) DK143457C (en)
FR (1) FR2192870B1 (en)
GB (1) GB1375132A (en)
IT (1) IT992613B (en)
NL (1) NL7305060A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50159967A (en) * 1974-06-17 1975-12-24
GB1542868A (en) * 1975-11-14 1979-03-28 Siemens Ag Production of phosphorus-doped monocrystalline silicon rods
JPS61117200A (en) * 1984-11-13 1986-06-04 Alps Electric Co Ltd Tellurium oxide whisker and its production
US6452211B1 (en) * 1997-06-10 2002-09-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
EP1088912A1 (en) * 1999-09-28 2001-04-04 Forschungsverbund Berlin e.V. Growth in solution of compound or alloy crystals in a floating zone

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL104644C (en) * 1959-09-18
NL112520C (en) * 1959-10-19
NL301226A (en) * 1962-12-03
DE1218404B (en) * 1964-02-01 1966-06-08 Siemens Ag Method for crucible-free zone melting of a crystalline rod, in particular a semiconductor rod
BE684801A (en) * 1965-08-05 1967-01-03

Also Published As

Publication number Publication date
FR2192870B1 (en) 1977-12-23
DK143457C (en) 1981-12-28
DK143457B (en) 1981-08-24
CA1016847A (en) 1977-09-06
US3915660A (en) 1975-10-28
BE802326A (en) 1973-11-05
FR2192870A1 (en) 1974-02-15
DE2234512B2 (en) 1978-08-24
DE2234512A1 (en) 1974-01-24
GB1375132A (en) 1974-11-27
JPS4953372A (en) 1974-05-23
NL7305060A (en) 1974-01-15
DE2234512C3 (en) 1979-04-19

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