IT8683630D0 - of non-volatile semiconductor memory device. - Google Patents

of non-volatile semiconductor memory device.

Info

Publication number
IT8683630D0
IT8683630D0 IT8363086A IT8363086A IT8683630D0 IT 8683630 D0 IT8683630 D0 IT 8683630D0 IT 8363086 A IT8363086 A IT 8363086A IT 8363086 A IT8363086 A IT 8363086A IT 8683630 D0 IT8683630 D0 IT 8683630D0
Authority
IT
Italy
Prior art keywords
non
memory device
semiconductor memory
volatile semiconductor
volatile
Prior art date
Application number
IT8363086A
Other languages
Italian (it)
Other versions
IT1201834B (en
Inventor
Livio Baldi
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT8363086A priority Critical patent/IT1201834B/en
Publication of IT8683630D0 publication Critical patent/IT8683630D0/en
Application granted granted Critical
Publication of IT1201834B publication Critical patent/IT1201834B/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7884Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885Hot carrier injection from the channel
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/112Read-only memory structures [ROM] and multistep manufacturing processes therefor
    • H01L27/115Electrically programmable read-only memories; Multistep manufacturing processes therefor
IT8363086A 1986-07-10 1986-07-10 of non-volatile semiconductor memory device IT1201834B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
IT8363086A IT1201834B (en) 1986-07-10 1986-07-10 of non-volatile semiconductor memory device

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
IT8363086A IT1201834B (en) 1986-07-10 1986-07-10 of non-volatile semiconductor memory device
DE19873785509 DE3785509T2 (en) 1986-07-10 1987-06-22 Nichtfluechtige semiconductor memory device.
DE19873785509 DE3785509D1 (en) 1986-07-10 1987-06-22 Nichtfluechtige semiconductor memory device.
US07/064,480 US4816883A (en) 1986-07-10 1987-06-22 Nonvolatile, semiconductor memory device
EP19870830234 EP0255489B1 (en) 1986-07-10 1987-06-22 Nonvolatile, semiconductor memory device
JP62171373A JPS6329980A (en) 1986-07-10 1987-07-10 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
IT8683630D0 true IT8683630D0 (en) 1986-07-10
IT1201834B IT1201834B (en) 1989-02-02

Family

ID=11323394

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8363086A IT1201834B (en) 1986-07-10 1986-07-10 of non-volatile semiconductor memory device

Country Status (5)

Country Link
US (1) US4816883A (en)
EP (1) EP0255489B1 (en)
JP (1) JPS6329980A (en)
DE (2) DE3785509D1 (en)
IT (1) IT1201834B (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060195A (en) * 1989-12-29 1991-10-22 Texas Instruments Incorporated Hot electron programmable, tunnel electron erasable contactless EEPROM
US5106772A (en) * 1990-01-09 1992-04-21 Intel Corporation Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide
US5260593A (en) * 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction
US5444279A (en) * 1993-08-11 1995-08-22 Micron Semiconductor, Inc. Floating gate memory device having discontinuous gate oxide thickness over the channel region
US5519653A (en) * 1994-03-11 1996-05-21 Thomas; Mammen Channel accelerated carrier tunneling-(CACT) method for programming memories
US5471422A (en) * 1994-04-11 1995-11-28 Motorola, Inc. EEPROM cell with isolation transistor and methods for making and operating the same
JP3238576B2 (en) * 1994-08-19 2001-12-17 株式会社東芝 Nonvolatile semiconductor memory device
US5552338A (en) * 1994-09-26 1996-09-03 Intel Corporation Method of using latchup current to blow a fuse in an integrated circuit
EP0730310B1 (en) * 1995-03-03 2001-10-17 SGS-THOMSON MICROELECTRONICS S.r.l. Electrically programmable and erasable non-volatile memory cell and memory devices of FLASH and EEPROM type
US6965142B2 (en) * 1995-03-07 2005-11-15 Impinj, Inc. Floating-gate semiconductor structures
US5687118A (en) * 1995-11-14 1997-11-11 Programmable Microelectronics Corporation PMOS memory cell with hot electron injection programming and tunnelling erasing
US5666307A (en) * 1995-11-14 1997-09-09 Programmable Microelectronics Corporation PMOS flash memory cell capable of multi-level threshold voltage storage
US5706227A (en) * 1995-12-07 1998-01-06 Programmable Microelectronics Corporation Double poly split gate PMOS flash memory cell
US6060360A (en) * 1997-04-14 2000-05-09 Taiwan Semiconductor Manufacturing Company Method of manufacture of P-channel EEprom and flash EEprom devices
US6509603B2 (en) 2000-03-13 2003-01-21 Taiwan Semiconductor Manufacturing Company P-channel EEPROM and flash EEPROM devices
US5933732A (en) 1997-05-07 1999-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Nonvolatile devices with P-channel EEPROM devices as injector
US6965123B1 (en) 1997-07-29 2005-11-15 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6794255B1 (en) * 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6031263A (en) * 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
US7154153B1 (en) 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6746893B1 (en) 1997-07-29 2004-06-08 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6936849B1 (en) 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
US7196929B1 (en) 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US6664909B1 (en) 2001-08-13 2003-12-16 Impinj, Inc. Method and apparatus for trimming high-resolution digital-to-analog converter
DE10201303A1 (en) * 2002-01-15 2003-07-31 Infineon Technologies Ag The nonvolatile two-transistor semiconductor memory cell and manufacturing method thereof
US7180125B2 (en) * 2004-08-16 2007-02-20 Chih-Hsin Wang P-channel electrically alterable non-volatile memory cell
US7626864B2 (en) * 2006-04-26 2009-12-01 Chih-Hsin Wang Electrically alterable non-volatile memory cells and arrays

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
GB1517925A (en) * 1974-09-20 1978-07-19 Siemens Ag Storage field effect transistors
US4016588A (en) * 1974-12-27 1977-04-05 Nippon Electric Company, Ltd. Non-volatile semiconductor memory device
JPS572190B2 (en) * 1975-08-28 1982-01-14
JPS5427778A (en) * 1977-08-04 1979-03-02 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory device
US4162504A (en) * 1977-12-27 1979-07-24 Rca Corp. Floating gate solid-state storage device
CH631287A5 (en) * 1979-03-14 1982-07-30 Centre Electron Horloger Element of non-volatile memory, electrically reprogrammable.
US4608585A (en) * 1982-07-30 1986-08-26 Signetics Corporation Electrically erasable PROM cell
EP0103043B1 (en) * 1982-09-15 1987-03-18 Deutsche ITT Industries GmbH Cmos memory cell with floating memory gate
JPS6197976A (en) * 1984-10-19 1986-05-16 Hitachi Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
DE3785509T2 (en) 1993-07-29
DE3785509D1 (en) 1993-05-27
EP0255489B1 (en) 1993-04-21
EP0255489A3 (en) 1988-07-06
IT1201834B (en) 1989-02-02
JPS6329980A (en) 1988-02-08
US4816883A (en) 1989-03-28
EP0255489A2 (en) 1988-02-03

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of prs-date), data collected since 19931001

Effective date: 19970730