IT1250089B - MOS TRANSISTOR STRUCTURE AND PROCEDURE FOR ITS MANUFACTURE. - Google Patents

MOS TRANSISTOR STRUCTURE AND PROCEDURE FOR ITS MANUFACTURE.

Info

Publication number
IT1250089B
IT1250089B ITRM910646A ITRM910646A IT1250089B IT 1250089 B IT1250089 B IT 1250089B IT RM910646 A ITRM910646 A IT RM910646A IT RM910646 A ITRM910646 A IT RM910646A IT 1250089 B IT1250089 B IT 1250089B
Authority
IT
Italy
Prior art keywords
mos transistor
channel width
procedure
manufacture
transistor structure
Prior art date
Application number
ITRM910646A
Other languages
Italian (it)
Inventor
Byeong-Hyeok Rho
Chang-Kyu Hwang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITRM910646A0 publication Critical patent/ITRM910646A0/en
Publication of ITRM910646A1 publication Critical patent/ITRM910646A1/en
Application granted granted Critical
Publication of IT1250089B publication Critical patent/IT1250089B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
    • H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Viene illustrato un transistore MOS comprendente una molteplicità di sporgenze disposte in parallelo verso la direzione della larghezza del canale nella regione di dispositivo di un substrato a semiconduttori avente regioni di sorgente, di assorbitore e di canale. Il gate 8 si estende anche esso nella direzione della larghezza del canale. La direzione di disposizione delle sporgenze è perpendicolare alla direzione della larghezza del canale. Conseguentemente viene ad essere aumentata praticamente la larghezza effettiva del canale senza aumentare l'area superficiale della geometria, in modo da migliorare considerevolmente la capacità di pilotaggio di corrente del transistore MOS.A MOS transistor is illustrated comprising a plurality of protrusions arranged parallel to the channel width direction in the device region of a semiconductor substrate having source, absorber and channel regions. Gate 8 also extends in the direction of the channel width. The direction of arrangement of the projections is perpendicular to the direction of the channel width. Consequently, the effective channel width is practically increased without increasing the surface area of the geometry, so as to considerably improve the current driving capacity of the MOS transistor.

ITRM910646A 1991-05-31 1991-08-29 MOS TRANSISTOR STRUCTURE AND PROCEDURE FOR ITS MANUFACTURE. IT1250089B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910009066A KR920022546A (en) 1991-05-31 1991-05-31 Structure of MOS transistor and its manufacturing method

Publications (3)

Publication Number Publication Date
ITRM910646A0 ITRM910646A0 (en) 1991-08-29
ITRM910646A1 ITRM910646A1 (en) 1993-03-01
IT1250089B true IT1250089B (en) 1995-03-30

Family

ID=19315297

Family Applications (1)

Application Number Title Priority Date Filing Date
ITRM910646A IT1250089B (en) 1991-05-31 1991-08-29 MOS TRANSISTOR STRUCTURE AND PROCEDURE FOR ITS MANUFACTURE.

Country Status (5)

Country Link
JP (1) JPH04368180A (en)
KR (1) KR920022546A (en)
DE (1) DE4127795A1 (en)
GB (1) GB2256315A (en)
IT (1) IT1250089B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762448B1 (en) * 2003-04-03 2004-07-13 Advanced Micro Devices, Inc. FinFET device with multiple fin structures
US7385247B2 (en) * 2004-01-17 2008-06-10 Samsung Electronics Co., Ltd. At least penta-sided-channel type of FinFET transistor
US7719043B2 (en) 2004-07-12 2010-05-18 Nec Corporation Semiconductor device with fin-type field effect transistor and manufacturing method thereof.
US20060071270A1 (en) * 2004-09-29 2006-04-06 Shibib Muhammed A Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
TWI263328B (en) * 2005-01-04 2006-10-01 Samsung Electronics Co Ltd Semiconductor devices having faceted channels and methods of fabricating such devices
JP4849504B2 (en) * 2005-03-29 2012-01-11 ラピスセミコンダクタ株式会社 SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, OUTPUT CIRCUIT, AND ELECTRONIC DEVICE
JP2007005568A (en) 2005-06-23 2007-01-11 Toshiba Corp Semiconductor device
JP5270817B2 (en) * 2006-03-29 2013-08-21 株式会社東芝 Method for processing a semiconductor member having a three-dimensional shape
CN104078356B (en) * 2013-03-28 2016-10-05 中芯国际集成电路制造(上海)有限公司 Segmented channel transistor and forming method thereof
CN104952785A (en) * 2014-03-31 2015-09-30 中芯国际集成电路制造(上海)有限公司 Semiconductor device and manufacturing method thereof
CN107342327A (en) * 2017-08-10 2017-11-10 睿力集成电路有限公司 The transistor arrangement and preparation method of a kind of semiconductor memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5132075A (en) * 1974-09-11 1976-03-18 Tetsutaro Mori Senkohodenkan no tentokairo
JPS5676576A (en) * 1979-11-26 1981-06-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPS5676575A (en) * 1979-11-26 1981-06-24 Nippon Telegr & Teleph Corp <Ntt> Manufacture of junction type field effect semiconductor device
NL188776C (en) * 1979-04-21 1992-09-16 Nippon Telegraph & Telephone FIELD EFFECT TRANSISTOR DEVICE AND METHOD FOR MANUFACTURING THESE.
US4393391A (en) * 1980-06-16 1983-07-12 Supertex, Inc. Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area
FR2501913A1 (en) * 1981-03-10 1982-09-17 Thomson Csf PLANAR TYPE FIELD EFFECT TRANSISTOR COMPRISING METALLIZED WELL ELECTRODES AND METHOD OF MANUFACTURING THE TRANSISTOR
US4583107A (en) * 1983-08-15 1986-04-15 Westinghouse Electric Corp. Castellated gate field effect transistor
FR2554639B1 (en) * 1983-11-08 1986-02-21 Thomson Csf FIELD EFFECT TRANSISTOR WITH ADJUSTABLE THRESHOLD VOLTAGE, AND INTEGRATED CIRCUIT COMPRISING SUCH TYPE OF TRANSISTORS
EP0167810A1 (en) * 1984-06-08 1986-01-15 Eaton Corporation Power JFET with plural lateral pinching

Also Published As

Publication number Publication date
ITRM910646A0 (en) 1991-08-29
GB9118511D0 (en) 1991-10-16
KR920022546A (en) 1992-12-19
DE4127795A1 (en) 1992-12-03
GB2256315A (en) 1992-12-02
JPH04368180A (en) 1992-12-21
ITRM910646A1 (en) 1993-03-01

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