IT1197660B - Rivelatore di radiazioni infrarosse a banda bloccata di impurezze illuminato dorsalmente - Google Patents

Rivelatore di radiazioni infrarosse a banda bloccata di impurezze illuminato dorsalmente

Info

Publication number
IT1197660B
IT1197660B IT48421/83A IT4842183A IT1197660B IT 1197660 B IT1197660 B IT 1197660B IT 48421/83 A IT48421/83 A IT 48421/83A IT 4842183 A IT4842183 A IT 4842183A IT 1197660 B IT1197660 B IT 1197660B
Authority
IT
Italy
Prior art keywords
illuminated
impurities
block
infrared radiation
radiation detector
Prior art date
Application number
IT48421/83A
Other languages
English (en)
Other versions
IT8348421A0 (it
Inventor
Stephen D Gaalema
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IT8348421A0 publication Critical patent/IT8348421A0/it
Application granted granted Critical
Publication of IT1197660B publication Critical patent/IT1197660B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/193—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
IT48421/83A 1982-06-07 1983-06-03 Rivelatore di radiazioni infrarosse a banda bloccata di impurezze illuminato dorsalmente IT1197660B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/385,979 US4507674A (en) 1982-06-07 1982-06-07 Backside illuminated blocked impurity band infrared detector

Publications (2)

Publication Number Publication Date
IT8348421A0 IT8348421A0 (it) 1983-06-03
IT1197660B true IT1197660B (it) 1988-12-06

Family

ID=23523669

Family Applications (1)

Application Number Title Priority Date Filing Date
IT48421/83A IT1197660B (it) 1982-06-07 1983-06-03 Rivelatore di radiazioni infrarosse a banda bloccata di impurezze illuminato dorsalmente

Country Status (6)

Country Link
US (1) US4507674A (it)
EP (1) EP0110977B1 (it)
DE (1) DE3371445D1 (it)
IL (1) IL68813A0 (it)
IT (1) IT1197660B (it)
WO (1) WO1983004456A1 (it)

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US4720738A (en) * 1982-09-08 1988-01-19 Texas Instruments Incorporated Focal plane array structure including a signal processing system
FR2592740B1 (fr) * 1986-01-08 1988-03-18 Commissariat Energie Atomique Detecteur photovoltaique en hgcdte a heterojonction et son procede de fabrication
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EP0271522A1 (en) * 1986-06-26 1988-06-22 Santa Barbara Research Center Backside contact blocked impurity band detector
DE3869782D1 (de) * 1988-08-31 1992-05-07 Santa Barbara Res Center Verfahren zur herstellung auf zwei seiten von anordnungen von verduenntem silizium.
US5001532A (en) * 1989-09-06 1991-03-19 Rockwell International Corporation Impurity band conduction detector having photoluminescent layer
US5459321A (en) * 1990-12-26 1995-10-17 The United States Of America As Represented By The Secretary Of The Navy Laser hardened backside illuminated optical detector
US5149956A (en) * 1991-06-12 1992-09-22 Santa Barbara Research Center Two-color radiation detector array and methods of fabricating same
JP2757624B2 (ja) * 1991-10-21 1998-05-25 日本電気株式会社 赤外線固体撮像素子及びその製造方法
US5327005A (en) * 1991-12-18 1994-07-05 Santa Barbara Research Center Striped contact IR detector
US5336930A (en) * 1992-06-26 1994-08-09 The United States Of America As Represented By The Secretary Of The Air Force Backside support for thin wafers
EP0664052B1 (en) * 1993-08-10 1997-12-17 Loral Vought Systems Corporation Photoconductive impedance-matched infrared detector with heterojunction blocking contacts
JP2867983B2 (ja) * 1996-12-03 1999-03-10 日本電気株式会社 フォトディテクタおよびその製造方法
US6297531B2 (en) 1998-01-05 2001-10-02 International Business Machines Corporation High performance, low power vertical integrated CMOS devices
US6137129A (en) * 1998-01-05 2000-10-24 International Business Machines Corporation High performance direct coupled FET memory cell
US7332701B2 (en) * 2002-05-16 2008-02-19 Koninklijke Philips Electronics N.V. Dual-mode CMOS imaging sensor with supporting LED
US7323111B1 (en) * 2004-01-30 2008-01-29 Metadigm Llc Angle control of multi-cavity molded components for MEMS and NEMS group assembly
JP4331033B2 (ja) * 2004-03-29 2009-09-16 浜松ホトニクス株式会社 半導体光検出素子及びその製造方法
US20070001100A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Light reflection for backside illuminated sensor
US7973380B2 (en) * 2005-11-23 2011-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for providing metal extension in backside illuminated sensor for wafer level testing
US7648851B2 (en) * 2006-03-06 2010-01-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating backside illuminated image sensor
US8704277B2 (en) * 2006-05-09 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Spectrally efficient photodiode for backside illuminated sensor
US7638852B2 (en) 2006-05-09 2009-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making wafer structure for backside illuminated color image sensor
US7791170B2 (en) * 2006-07-10 2010-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a deep junction for electrical crosstalk reduction of an image sensor
JP4855192B2 (ja) * 2006-09-14 2012-01-18 富士フイルム株式会社 イメージセンサ及びデジタルカメラ
US20080079108A1 (en) * 2006-09-29 2008-04-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for Improving Sensitivity of Backside Illuminated Image Sensors
US8436443B2 (en) * 2006-09-29 2013-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. Backside depletion for backside illuminated image sensors
US7485940B2 (en) * 2007-01-24 2009-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Guard ring structure for improving crosstalk of backside illuminated image sensor
US20080237761A1 (en) * 2007-04-02 2008-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for enhancing light sensitivity for backside illumination image sensor
US7656000B2 (en) * 2007-05-24 2010-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Photodetector for backside-illuminated sensor
US7755123B2 (en) * 2007-08-24 2010-07-13 Aptina Imaging Corporation Apparatus, system, and method providing backside illuminated imaging device
US7999342B2 (en) * 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
US20110181763A1 (en) * 2009-03-05 2011-07-28 Panasonic Corporation Image pickup device and solid-state image pickup element of the type illuminated from both faces
US9543356B2 (en) * 2009-03-10 2017-01-10 Globalfoundries Inc. Pixel sensor cell including light shield
DE102009023807A1 (de) 2009-06-03 2010-12-09 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Halbleiterstruktur, insbesondere BIB-Detektor mit einem DEPFET als Ausleseelement, sowie entsprechendes Betriebsverfahren
DE102011102007B4 (de) 2011-05-19 2012-12-27 Austriamicrosystems Ag Fotodiode und Herstellungsverfahren
CN111384212A (zh) * 2020-02-21 2020-07-07 南京国盛电子有限公司 一种背照式bib红外探测器硅外延片的制造方法
CN112289872A (zh) * 2020-10-29 2021-01-29 上海微波技术研究所（中国电子科技集团公司第五十研究所） 倒梯形槽面结构的阻挡杂质带探测器及其制备方法
CN112713219B (zh) * 2020-12-29 2022-11-11 上海微波技术研究所（中国电子科技集团公司第五十研究所） 共掺杂阻挡杂质带探测系统及方法
CN113241386A (zh) * 2021-04-16 2021-08-10 中国科学院上海技术物理研究所 一种硅掺镓阻挡杂质带中长波红外探测器及制备方法

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US4028719A (en) * 1976-03-11 1977-06-07 Northrop Corporation Array type charge extraction device for infra-red detection
US4122407A (en) * 1976-04-06 1978-10-24 International Business Machines Corporation Heterostructure junction light emitting or responding or modulating devices
US4197553A (en) * 1976-09-07 1980-04-08 Hughes Aircraft Company Monolithic extrinsic silicon infrared detector structure employing multi-epitaxial layers
US4198647A (en) * 1977-05-02 1980-04-15 Hughes Aircraft Company High resolution continuously distributed silicon photodiode substrate
JPS6057714B2 (ja) * 1978-01-27 1985-12-16 株式会社日立製作所 光半導体装置
US4236829A (en) * 1978-01-31 1980-12-02 Matsushita Electric Industrial Co., Ltd. Solid-state image sensor
US4228365A (en) * 1978-10-03 1980-10-14 The United States Of America As Represented By The Secretary Of The Army Monolithic infrared focal plane charge coupled device imager
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US4383267A (en) * 1980-10-17 1983-05-10 Rca Corporation Avalanche photodiode and method of making same

Also Published As

Publication number Publication date
DE3371445D1 (en) 1987-06-11
US4507674A (en) 1985-03-26
WO1983004456A1 (en) 1983-12-22
IL68813A0 (en) 1983-09-30
IT8348421A0 (it) 1983-06-03
EP0110977A1 (en) 1984-06-20
EP0110977B1 (en) 1987-05-06

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940531