IT1176010B - Cella a transistor elettricamente programmabile per memorie elettroniche - Google Patents
Cella a transistor elettricamente programmabile per memorie elettronicheInfo
- Publication number
- IT1176010B IT1176010B IT20489/84A IT2048984A IT1176010B IT 1176010 B IT1176010 B IT 1176010B IT 20489/84 A IT20489/84 A IT 20489/84A IT 2048984 A IT2048984 A IT 2048984A IT 1176010 B IT1176010 B IT 1176010B
- Authority
- IT
- Italy
- Prior art keywords
- electrically programmable
- transistor cell
- electronic memories
- programmable transistor
- memories
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48377883A | 1983-04-11 | 1983-04-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8420489A0 IT8420489A0 (it) | 1984-04-11 |
| IT1176010B true IT1176010B (it) | 1987-08-12 |
Family
ID=23921492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT20489/84A IT1176010B (it) | 1983-04-11 | 1984-04-11 | Cella a transistor elettricamente programmabile per memorie elettroniche |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0142516A1 (fr) |
| JP (1) | JPS60501187A (fr) |
| IT (1) | IT1176010B (fr) |
| WO (1) | WO1984004197A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4311388B4 (de) * | 1993-04-07 | 2005-07-28 | Forschungszentrum Jülich GmbH | Schichtsystem mit elektrisch aktivierbarer Schicht |
| US7986005B2 (en) * | 2007-07-27 | 2011-07-26 | Infineon Technologies Austria Ag | Short circuit limiting in power semiconductor devices |
| CN112908851B (zh) * | 2019-12-03 | 2022-04-15 | 苏州东微半导体股份有限公司 | 半导体功率器件的制造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4161039A (en) * | 1976-12-15 | 1979-07-10 | Siemens Aktiengesellschaft | N-Channel storage FET |
| JPS5567161A (en) * | 1978-11-14 | 1980-05-21 | Seiko Epson Corp | Semiconductor memory storage |
-
1984
- 1984-03-08 EP EP84901486A patent/EP0142516A1/fr not_active Withdrawn
- 1984-03-08 WO PCT/US1984/000358 patent/WO1984004197A1/fr not_active Application Discontinuation
- 1984-03-08 JP JP59501343A patent/JPS60501187A/ja active Pending
- 1984-04-11 IT IT20489/84A patent/IT1176010B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| EP0142516A1 (fr) | 1985-05-29 |
| IT8420489A0 (it) | 1984-04-11 |
| WO1984004197A1 (fr) | 1984-10-25 |
| JPS60501187A (ja) | 1985-07-25 |
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