IT1127577B - Floating gate memory cell - Google Patents

Floating gate memory cell

Info

Publication number
IT1127577B
IT1127577B IT47669/80A IT4766980A IT1127577B IT 1127577 B IT1127577 B IT 1127577B IT 47669/80 A IT47669/80 A IT 47669/80A IT 4766980 A IT4766980 A IT 4766980A IT 1127577 B IT1127577 B IT 1127577B
Authority
IT
Italy
Prior art keywords
electrode
floating gate
memory cell
gate
floating
Prior art date
Application number
IT47669/80A
Other languages
Italian (it)
Other versions
IT8047669A0 (en
Inventor
Richard Thomas Simko
Original Assignee
Xicor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/006,030 external-priority patent/US4274012A/en
Application filed by Xicor Inc filed Critical Xicor Inc
Publication of IT8047669A0 publication Critical patent/IT8047669A0/en
Application granted granted Critical
Publication of IT1127577B publication Critical patent/IT1127577B/en

Links

Abstract

The floating gate MOS memory cell comprises a substrate of first conductivity type and an electrically isolated biasing electrode of opposite conductivity type on the substrate. An isolated floating gate conductor lies over this electrode in capacitive connection with it. A programming electrode lies adjacent to the floating electrode to introduce electrons into it. An erasing and memorising electrode is provided next to the floating gate to raise electrons to the gate when an electric field is established between the gate and this electrode. The erasing and memorising electrode overlies the bias electrode and is in capacitive connection with it. The biasing electrode may be electrically isolated and a predetermined voltage applied to it. The voltage on the floating gate is detected.
IT47669/80A 1979-01-24 1980-01-22 Floating gate memory cell IT1127577B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/006,030 US4274012A (en) 1979-01-24 1979-01-24 Substrate coupled floating gate memory cell
US06/006,029 US4300212A (en) 1979-01-24 1979-01-24 Nonvolatile static random access memory devices

Publications (2)

Publication Number Publication Date
IT8047669A0 IT8047669A0 (en) 1980-01-22
IT1127577B true IT1127577B (en) 1986-05-21

Family

ID=26675080

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47669/80A IT1127577B (en) 1979-01-24 1980-01-22 Floating gate memory cell

Country Status (3)

Country Link
CA (1) CA1141029A (en)
IL (1) IL59061A (en)
IT (1) IT1127577B (en)

Also Published As

Publication number Publication date
IT8047669A0 (en) 1980-01-22
CA1141029A (en) 1983-02-08
IL59061A0 (en) 1980-03-31
IL59061A (en) 1982-03-31

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