IT1042051B - Elemento memorizzatore compensatore per memorie dinamiche a semicondut tori e modo di funzionamento dello stesso - Google Patents

Elemento memorizzatore compensatore per memorie dinamiche a semicondut tori e modo di funzionamento dello stesso

Info

Publication number
IT1042051B
IT1042051B IT26611/75A IT2661175A IT1042051B IT 1042051 B IT1042051 B IT 1042051B IT 26611/75 A IT26611/75 A IT 26611/75A IT 2661175 A IT2661175 A IT 2661175A IT 1042051 B IT1042051 B IT 1042051B
Authority
IT
Italy
Prior art keywords
compensator
semiconductor dynamic
dynamic memories
functioning mode
memorizer
Prior art date
Application number
IT26611/75A
Other languages
English (en)
Italian (it)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742441243 external-priority patent/DE2441243C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1042051B publication Critical patent/IT1042051B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4099—Dummy cell treatment; Reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Manipulation Of Pulses (AREA)
IT26611/75A 1974-08-28 1975-08-27 Elemento memorizzatore compensatore per memorie dinamiche a semicondut tori e modo di funzionamento dello stesso IT1042051B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742441243 DE2441243C3 (de) 1974-08-28 Kompensationsspeicherelement

Publications (1)

Publication Number Publication Date
IT1042051B true IT1042051B (it) 1980-01-30

Family

ID=5924311

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26611/75A IT1042051B (it) 1974-08-28 1975-08-27 Elemento memorizzatore compensatore per memorie dinamiche a semicondut tori e modo di funzionamento dello stesso

Country Status (6)

Country Link
US (1) US4027294A (https=)
JP (1) JPS5837635B2 (https=)
CA (1) CA1054712A (https=)
FR (1) FR2283513A1 (https=)
GB (1) GB1523752A (https=)
IT (1) IT1042051B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2557165C3 (de) * 1975-12-18 1979-01-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Decoderschaltung und ihre Anordnung zur Integrierung auf einem Halbleiterbaustein
JPS52106640A (en) * 1976-03-05 1977-09-07 Hitachi Ltd Memory peripheral circuit
DE2630797C2 (de) * 1976-07-08 1978-08-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Funktionsgenerator zur Erzeugung einer Spannung an einem Knoten, an den den Bitleitungen eines MOS-Speichers zugeordnete Flip-Flops aus MOS-Transistoren angeschlossen sind
DE2633558C2 (de) * 1976-07-26 1978-08-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Speicherbaustein
US4095282A (en) * 1976-11-23 1978-06-13 Westinghouse Electric Corp. Memory including varactor circuit to boost address signals
JPS54101230A (en) * 1978-01-26 1979-08-09 Nec Corp Dynamic mos memory circuit
US4533843A (en) * 1978-09-07 1985-08-06 Texas Instruments Incorporated High performance dynamic sense amplifier with voltage boost for row address lines
US4748349A (en) * 1978-09-22 1988-05-31 Texas Instruments Incorporated High performance dynamic sense amplifier with voltage boost for row address lines
US4543500A (en) * 1978-09-22 1985-09-24 Texas Instruments Incorporated High performance dynamic sense amplifier voltage boost for row address lines
JPS57111879A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Semiconductor storage device
US4420822A (en) * 1982-03-19 1983-12-13 Signetics Corporation Field plate sensing in single transistor, single capacitor MOS random access memory
US4506351A (en) * 1982-06-23 1985-03-19 International Business Machines Corporation One-device random access memory having enhanced sense signal
US4585958A (en) * 1983-12-30 1986-04-29 At&T Bell Laboratories IC chip with noise suppression circuit
JPH0789435B2 (ja) * 1984-04-06 1995-09-27 株式会社日立製作所 ダイナミツク型ｒａｍ
JPS61138140U (https=) * 1985-02-19 1986-08-27
JP3085803B2 (ja) * 1992-11-26 2000-09-11 株式会社東芝 差動電流源回路
EP0663666B1 (de) * 1994-01-12 1999-03-03 Siemens Aktiengesellschaft Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betrieb
EP0663667B1 (de) * 1994-01-12 1999-03-03 Siemens Aktiengesellschaft Integrierte Halbleiterspeicherschaltung und Verfahren zu ihrem Betrieb

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678473A (en) * 1970-06-04 1972-07-18 Shell Oil Co Read-write circuit for capacitive memory arrays
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
US3940747A (en) * 1973-08-02 1976-02-24 Texas Instruments Incorporated High density, high speed random access read-write memory
US3949381A (en) * 1974-07-23 1976-04-06 International Business Machines Corporation Differential charge transfer sense amplifier

Also Published As

Publication number Publication date
FR2283513A1 (fr) 1976-03-26
JPS5837635B2 (ja) 1983-08-17
GB1523752A (en) 1978-09-06
FR2283513B1 (https=) 1978-09-22
US4027294A (en) 1977-05-31
DE2441243A1 (de) 1976-03-18
JPS5149642A (https=) 1976-04-30
CA1054712A (en) 1979-05-15
DE2441243B2 (de) 1976-07-15

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