IN2014DN08388A - - Google Patents
Info
- Publication number
- IN2014DN08388A IN2014DN08388A IN8388DEN2014A IN2014DN08388A IN 2014DN08388 A IN2014DN08388 A IN 2014DN08388A IN 8388DEN2014 A IN8388DEN2014 A IN 8388DEN2014A IN 2014DN08388 A IN2014DN08388 A IN 2014DN08388A
- Authority
- IN
- India
- Prior art keywords
- aforementioned
- pixels
- pixel groups
- incident light
- image pickup
- Prior art date
Links
- 238000009825 accumulation Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/533—Control of the integration time by using differing integration times for different sensor regions
- H04N25/534—Control of the integration time by using differing integration times for different sensor regions depending on the spectral component
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
- H04N25/533—Control of the integration time by using differing integration times for different sensor regions
- H04N25/535—Control of the integration time by using differing integration times for different sensor regions by dynamic region selection
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/706—Pixels for exposure or ambient light measuring
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012082158 | 2012-03-30 | ||
JP2012104830 | 2012-05-01 | ||
PCT/JP2013/002119 WO2013145753A1 (ja) | 2012-03-30 | 2013-03-28 | 撮像素子および撮像装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014DN08388A true IN2014DN08388A (ja) | 2015-05-08 |
Family
ID=49259048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN8388DEN2014 IN2014DN08388A (ja) | 2012-03-30 | 2013-03-28 |
Country Status (6)
Country | Link |
---|---|
US (5) | US20150009376A1 (ja) |
EP (1) | EP2833619B1 (ja) |
JP (4) | JP6402624B2 (ja) |
CN (3) | CN104247400B (ja) |
IN (1) | IN2014DN08388A (ja) |
WO (1) | WO2013145753A1 (ja) |
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WO2013145753A1 (ja) * | 2012-03-30 | 2013-10-03 | 株式会社ニコン | 撮像素子および撮像装置 |
JP6207351B2 (ja) * | 2013-11-12 | 2017-10-04 | キヤノン株式会社 | 固体撮像装置および撮像システム |
US10680022B2 (en) | 2013-12-12 | 2020-06-09 | Sony Corporation | Solid state imaging device, manufacturing method of the same, and electronic equipment |
JP6233188B2 (ja) * | 2013-12-12 | 2017-11-22 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
EP3298773A4 (en) * | 2015-05-19 | 2018-05-16 | Magic Leap, Inc. | Semi-global shutter imager |
JP2017022624A (ja) * | 2015-07-13 | 2017-01-26 | キヤノン株式会社 | 撮像素子及びその駆動方法、及び撮像装置 |
US10014333B2 (en) * | 2015-08-26 | 2018-07-03 | Semiconductor Components Industries, Llc | Back-side illuminated pixels with interconnect layers |
KR102406996B1 (ko) * | 2017-04-07 | 2022-06-08 | 삼성전자주식회사 | 이미지 센서 |
US10686996B2 (en) | 2017-06-26 | 2020-06-16 | Facebook Technologies, Llc | Digital pixel with extended dynamic range |
US10419701B2 (en) | 2017-06-26 | 2019-09-17 | Facebook Technologies, Llc | Digital pixel image sensor |
US10598546B2 (en) | 2017-08-17 | 2020-03-24 | Facebook Technologies, Llc | Detecting high intensity light in photo sensor |
JP7039237B2 (ja) | 2017-09-29 | 2022-03-22 | キヤノン株式会社 | 撮像装置、撮像システム、移動体、回路チップ |
US11393867B2 (en) | 2017-12-06 | 2022-07-19 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
JP7527755B2 (ja) * | 2018-02-09 | 2024-08-05 | キヤノン株式会社 | 光電変換装置および撮像システム |
US10969273B2 (en) | 2018-03-19 | 2021-04-06 | Facebook Technologies, Llc | Analog-to-digital converter having programmable quantization resolution |
US11004881B2 (en) | 2018-04-03 | 2021-05-11 | Facebook Technologies, Llc | Global shutter image sensor |
US10834344B2 (en) | 2018-06-09 | 2020-11-10 | Facebook Technologies, Llc | Digital pixel with extended dynamic range |
US11089241B2 (en) | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Pixel cell with multiple photodiodes |
US10903260B2 (en) | 2018-06-11 | 2021-01-26 | Facebook Technologies, Llc | Multi-photodiode pixel cell |
US11089210B2 (en) | 2018-06-11 | 2021-08-10 | Facebook Technologies, Llc | Configurable image sensor |
US11906353B2 (en) | 2018-06-11 | 2024-02-20 | Meta Platforms Technologies, Llc | Digital pixel with extended dynamic range |
US11463636B2 (en) | 2018-06-27 | 2022-10-04 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
US10897586B2 (en) | 2018-06-28 | 2021-01-19 | Facebook Technologies, Llc | Global shutter image sensor |
JP2020010323A (ja) * | 2018-07-09 | 2020-01-16 | シャープ株式会社 | 撮像装置 |
JP2018174592A (ja) * | 2018-08-15 | 2018-11-08 | 株式会社ニコン | 電子機器 |
US10931884B2 (en) | 2018-08-20 | 2021-02-23 | Facebook Technologies, Llc | Pixel sensor having adaptive exposure time |
US11956413B2 (en) * | 2018-08-27 | 2024-04-09 | Meta Platforms Technologies, Llc | Pixel sensor having multiple photodiodes and shared comparator |
CN112689900A (zh) * | 2018-10-17 | 2021-04-20 | 索尼半导体解决方案公司 | 摄像元件和电子装置 |
US11595602B2 (en) | 2018-11-05 | 2023-02-28 | Meta Platforms Technologies, Llc | Image sensor post processing |
US11102430B2 (en) | 2018-12-10 | 2021-08-24 | Facebook Technologies, Llc | Pixel sensor having multiple photodiodes |
FR3091115B1 (fr) * | 2018-12-21 | 2021-02-19 | Trixell | Détecteur matriciel à regroupement rapide |
US11218660B1 (en) | 2019-03-26 | 2022-01-04 | Facebook Technologies, Llc | Pixel sensor having shared readout structure |
US11943561B2 (en) | 2019-06-13 | 2024-03-26 | Meta Platforms Technologies, Llc | Non-linear quantization at pixel sensor |
US11936998B1 (en) | 2019-10-17 | 2024-03-19 | Meta Platforms Technologies, Llc | Digital pixel sensor having extended dynamic range |
US11902685B1 (en) | 2020-04-28 | 2024-02-13 | Meta Platforms Technologies, Llc | Pixel sensor having hierarchical memory |
KR20210135380A (ko) * | 2020-05-04 | 2021-11-15 | 삼성전자주식회사 | 이미지 센서 |
US11910114B2 (en) | 2020-07-17 | 2024-02-20 | Meta Platforms Technologies, Llc | Multi-mode image sensor |
KR20220036014A (ko) * | 2020-09-15 | 2022-03-22 | 삼성전자주식회사 | 이미지 센싱 시스템 |
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US11956560B2 (en) | 2020-10-09 | 2024-04-09 | Meta Platforms Technologies, Llc | Digital pixel sensor having reduced quantization operation |
US12022218B2 (en) | 2020-12-29 | 2024-06-25 | Meta Platforms Technologies, Llc | Digital image sensor using a single-input comparator based quantizer |
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JP4547462B1 (ja) * | 2009-11-16 | 2010-09-22 | アキュートロジック株式会社 | 撮像素子、撮像素子の駆動装置、撮像素子の駆動方法、画像処理装置、プログラム、及び、撮像装置 |
DE102010028746B4 (de) * | 2010-05-07 | 2012-06-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bildsensor und Verfahren zum Aufnehmen eines Bildes |
JP5548263B2 (ja) * | 2010-05-27 | 2014-07-16 | パナソニック株式会社 | 固体撮像素子および固体撮像素子の駆動方法 |
JP4917193B2 (ja) | 2010-07-08 | 2012-04-18 | パナソニック株式会社 | 撮像装置 |
US20120200749A1 (en) * | 2011-02-03 | 2012-08-09 | Ulrich Boettiger | Imagers with structures for near field imaging |
JP2012175234A (ja) * | 2011-02-18 | 2012-09-10 | Sony Corp | 撮像装置、撮像素子、および撮像制御方法、並びにプログラム |
JP5333493B2 (ja) * | 2011-03-22 | 2013-11-06 | 株式会社ニコン | 裏面照射型撮像素子および撮像装置 |
WO2013145753A1 (ja) * | 2012-03-30 | 2013-10-03 | 株式会社ニコン | 撮像素子および撮像装置 |
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2013
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- 2013-03-28 EP EP13769477.4A patent/EP2833619B1/en active Active
- 2013-03-28 IN IN8388DEN2014 patent/IN2014DN08388A/en unknown
- 2013-03-28 CN CN201380016350.0A patent/CN104247400B/zh active Active
- 2013-03-28 CN CN201911202048.XA patent/CN110784666B/zh active Active
- 2013-03-28 JP JP2014507443A patent/JP6402624B2/ja active Active
- 2013-03-28 CN CN201911202115.8A patent/CN111223881B/zh active Active
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2014
- 2014-09-22 US US14/492,336 patent/US20150009376A1/en not_active Abandoned
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2017
- 2017-10-25 US US15/793,495 patent/US10244194B2/en active Active
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2018
- 2018-09-12 JP JP2018170390A patent/JP6822454B2/ja active Active
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2019
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2020
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2021
- 2021-01-07 JP JP2021001749A patent/JP7359166B2/ja active Active
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2022
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JP2023134609A (ja) | 2023-09-27 |
CN110784666A (zh) | 2020-02-11 |
JP2019041388A (ja) | 2019-03-14 |
JPWO2013145753A1 (ja) | 2015-12-10 |
US20150009376A1 (en) | 2015-01-08 |
CN104247400A (zh) | 2014-12-24 |
CN111223881B (zh) | 2023-04-21 |
CN110784666B (zh) | 2022-04-12 |
US10574918B2 (en) | 2020-02-25 |
EP2833619A4 (en) | 2015-09-16 |
US20230276148A1 (en) | 2023-08-31 |
US20190182446A1 (en) | 2019-06-13 |
US11317046B2 (en) | 2022-04-26 |
US20180048842A1 (en) | 2018-02-15 |
JP6402624B2 (ja) | 2018-10-10 |
EP2833619B1 (en) | 2023-06-07 |
US20220191421A1 (en) | 2022-06-16 |
CN111223881A (zh) | 2020-06-02 |
US11689832B2 (en) | 2023-06-27 |
WO2013145753A1 (ja) | 2013-10-03 |
US10244194B2 (en) | 2019-03-26 |
US20200145601A1 (en) | 2020-05-07 |
JP2021061637A (ja) | 2021-04-15 |
JP7359166B2 (ja) | 2023-10-11 |
JP6822454B2 (ja) | 2021-01-27 |
EP2833619A1 (en) | 2015-02-04 |
CN104247400B (zh) | 2019-12-20 |
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