IN159155B - - Google Patents
Info
- Publication number
- IN159155B IN159155B IN549/CAL/83A IN549CA1983A IN159155B IN 159155 B IN159155 B IN 159155B IN 549CA1983 A IN549CA1983 A IN 549CA1983A IN 159155 B IN159155 B IN 159155B
- Authority
- IN
- India
- Prior art keywords
- gas
- substrate
- film
- energy spectrum
- deposition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/488—Protection of windows for introduction of radiation into the coating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Treatment Of Glass (AREA)
- Glass Compositions (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Wrappers (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Photoreceptors In Electrophotography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/377,738 US4435445A (en) | 1982-05-13 | 1982-05-13 | Photo-assisted CVD |
Publications (1)
Publication Number | Publication Date |
---|---|
IN159155B true IN159155B (es) | 1987-04-04 |
Family
ID=23490323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN549/CAL/83A IN159155B (es) | 1982-05-13 | 1983-05-04 |
Country Status (13)
Country | Link |
---|---|
US (1) | US4435445A (es) |
EP (1) | EP0095275B1 (es) |
JP (1) | JPS5964770A (es) |
AT (1) | ATE26469T1 (es) |
AU (1) | AU555506B2 (es) |
BR (1) | BR8302417A (es) |
CA (1) | CA1209091A (es) |
DE (1) | DE3370832D1 (es) |
IL (1) | IL68590A (es) |
IN (1) | IN159155B (es) |
MX (1) | MX163318A (es) |
PH (1) | PH18523A (es) |
ZA (1) | ZA833368B (es) |
Families Citing this family (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4651673A (en) * | 1982-09-02 | 1987-03-24 | At&T Technologies, Inc. | CVD apparatus |
JPS5989407A (ja) * | 1982-11-15 | 1984-05-23 | Mitsui Toatsu Chem Inc | アモルフアスシリコン膜の形成方法 |
JPS59215732A (ja) * | 1983-05-24 | 1984-12-05 | Semiconductor Energy Lab Co Ltd | 窒化珪素被膜作製方法 |
JPS60116778A (ja) * | 1983-11-23 | 1985-06-24 | ジエミニ リサーチ,インコーポレイテツド | 化学蒸着方法及び装置 |
US4544423A (en) * | 1984-02-10 | 1985-10-01 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Amorphous silicon semiconductor and process for same |
JPS60170234A (ja) * | 1984-02-15 | 1985-09-03 | Semiconductor Energy Lab Co Ltd | 気相反応装置および気相反応被膜作製方法 |
US5780313A (en) * | 1985-02-14 | 1998-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
JPH07107190B2 (ja) * | 1984-03-30 | 1995-11-15 | キヤノン株式会社 | 光化学気相成長方法 |
JPS60206446A (ja) * | 1984-03-30 | 1985-10-18 | Canon Inc | 光化学気相成長装置 |
JPH0630339B2 (ja) * | 1984-07-16 | 1994-04-20 | 新技術事業団 | GaAs単結晶の製造方法 |
GB2162207B (en) * | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
US5294286A (en) * | 1984-07-26 | 1994-03-15 | Research Development Corporation Of Japan | Process for forming a thin film of silicon |
JPH0766906B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | GaAsエピタキシャル成長方法 |
US4731255A (en) * | 1984-09-26 | 1988-03-15 | Applied Materials Japan, Inc. | Gas-phase growth process and an apparatus for the same |
US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
JPH0752718B2 (ja) | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
US4590091A (en) * | 1984-12-17 | 1986-05-20 | Hughes Aircraft Company | Photochemical process for substrate surface preparation |
DE3610401A1 (de) * | 1985-03-28 | 1987-02-12 | Sumitomo Electric Industries | Halbleiterelement und verfahren zu dessen herstellung und gegenstand, in dem dieses element verwendet wird |
US4719122A (en) * | 1985-04-08 | 1988-01-12 | Semiconductor Energy Laboratory Co., Ltd. | CVD method and apparatus for forming a film |
US4653428A (en) * | 1985-05-10 | 1987-03-31 | General Electric Company | Selective chemical vapor deposition apparatus |
US4694777A (en) * | 1985-07-03 | 1987-09-22 | Roche Gregory A | Apparatus for, and methods of, depositing a substance on a substrate |
US5261961A (en) * | 1985-07-23 | 1993-11-16 | Canon Kabushiki Kaisha | Device for forming deposited film |
US5769950A (en) * | 1985-07-23 | 1998-06-23 | Canon Kabushiki Kaisha | Device for forming deposited film |
US6077718A (en) * | 1985-07-23 | 2000-06-20 | Canon Kabushiki Kaisha | Method for forming deposited film |
US4719123A (en) * | 1985-08-05 | 1988-01-12 | Sanyo Electric Co., Ltd. | Method for fabricating periodically multilayered film |
JP2686928B2 (ja) * | 1985-08-26 | 1997-12-08 | アンリツ株式会社 | シリコン・ゲルマニウム混晶薄膜導電体 |
EP0214690B1 (en) * | 1985-09-06 | 1992-03-25 | Philips Electronics Uk Limited | A method of manufacturing a semiconductor device |
US4910044A (en) * | 1985-09-30 | 1990-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Ultraviolet light emitting device and application thereof |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
KR910003169B1 (ko) * | 1985-11-12 | 1991-05-20 | 가부시끼가이샤 한도다이 에네르기 겐뀨소 | 반도체 장치 제조 방법 및 장치 |
US4690830A (en) * | 1986-02-18 | 1987-09-01 | Solarex Corporation | Activation by dehydrogenation or dehalogenation of deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
US4910153A (en) * | 1986-02-18 | 1990-03-20 | Solarex Corporation | Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
US4654226A (en) * | 1986-03-03 | 1987-03-31 | The University Of Delaware | Apparatus and method for photochemical vapor deposition |
US4668528A (en) * | 1986-04-09 | 1987-05-26 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
US4748045A (en) * | 1986-04-09 | 1988-05-31 | Massachusetts Institute Of Technology | Method and apparatus for photodeposition of films on surfaces |
US4747367A (en) * | 1986-06-12 | 1988-05-31 | Crystal Specialties, Inc. | Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition |
EP0252667B1 (en) * | 1986-06-30 | 1996-03-27 | Nihon Sinku Gijutsu Kabushiki Kaisha | Chemical vapour deposition methods |
US4994301A (en) * | 1986-06-30 | 1991-02-19 | Nihon Sinku Gijutsu Kabusiki Kaisha | ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate |
US5427824A (en) * | 1986-09-09 | 1995-06-27 | Semiconductor Energy Laboratory Co., Ltd. | CVD apparatus |
KR910003742B1 (ko) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
US4775203A (en) * | 1987-02-13 | 1988-10-04 | General Electric Company | Optical scattering free metal oxide films and methods of making the same |
US4816294A (en) * | 1987-05-04 | 1989-03-28 | Midwest Research Institute | Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes |
US4843030A (en) * | 1987-11-30 | 1989-06-27 | Eaton Corporation | Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes |
US5229081A (en) * | 1988-02-12 | 1993-07-20 | Regal Joint Co., Ltd. | Apparatus for semiconductor process including photo-excitation process |
DD274830A1 (de) * | 1988-08-12 | 1990-01-03 | Elektromat Veb | Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken |
US4940505A (en) * | 1988-12-02 | 1990-07-10 | Eaton Corporation | Method for growing single crystalline silicon with intermediate bonding agent and combined thermal and photolytic activation |
US5558884A (en) * | 1989-04-03 | 1996-09-24 | Omnichrome Corporation | System for rapidly producing either integrated circuits on a substrate, Interconnections on a printed circuit board or rapidly performing lithography |
US5005519A (en) * | 1990-03-14 | 1991-04-09 | Fusion Systems Corporation | Reaction chamber having non-clouded window |
US5089872A (en) * | 1990-04-27 | 1992-02-18 | North Carolina State University | Selective germanium deposition on silicon and resulting structures |
US5101247A (en) * | 1990-04-27 | 1992-03-31 | North Carolina State University | Germanium silicon dioxide gate MOSFET |
JP3002013B2 (ja) * | 1991-06-04 | 2000-01-24 | 松下技研株式会社 | 薄膜および多層膜の製造方法およびその製造装置 |
US5215588A (en) * | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system |
US5422534A (en) * | 1992-11-18 | 1995-06-06 | General Electric Company | Tantala-silica interference filters and lamps using same |
US6067931A (en) * | 1996-11-04 | 2000-05-30 | General Electric Company | Thermal processor for semiconductor wafers |
JP2001506062A (ja) * | 1997-10-14 | 2001-05-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 低温cvdによる半導体装置の製造方法 |
US6495800B2 (en) | 1999-08-23 | 2002-12-17 | Carson T. Richert | Continuous-conduction wafer bump reflow system |
US6382816B1 (en) | 1999-12-23 | 2002-05-07 | General Eectric Company | Protected coating for energy efficient lamp |
US7513815B2 (en) * | 1999-12-23 | 2009-04-07 | General Electric Company | Optimal silicon dioxide protection layer thickness for silver lamp reflector |
WO2001073868A2 (en) | 2000-03-24 | 2001-10-04 | Cymbet Corporation | Device enclosures and devices with integrated battery |
JP3598381B2 (ja) * | 2002-07-02 | 2004-12-08 | 独立行政法人物質・材料研究機構 | 一般式;BNで示され、六方晶系5H型ないしは6H型多形構造を有し、紫外域で発光するsp3結合型窒化ホウ素とその製造方法、及びこれを利用した機能性材料 |
US6906436B2 (en) * | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
US7603144B2 (en) * | 2003-01-02 | 2009-10-13 | Cymbet Corporation | Active wireless tagging system on peel and stick substrate |
US7294209B2 (en) * | 2003-01-02 | 2007-11-13 | Cymbet Corporation | Apparatus and method for depositing material onto a substrate using a roll-to-roll mask |
US20040131760A1 (en) * | 2003-01-02 | 2004-07-08 | Stuart Shakespeare | Apparatus and method for depositing material onto multiple independently moving substrates in a chamber |
US20050023983A1 (en) * | 2003-08-01 | 2005-02-03 | Rajasingh Israel | Optimal silicon dioxide protection layer thickness for silver lamp reflector |
US7211351B2 (en) * | 2003-10-16 | 2007-05-01 | Cymbet Corporation | Lithium/air batteries with LiPON as separator and protective barrier and method |
JP2007518246A (ja) * | 2004-01-06 | 2007-07-05 | シンベット コーポーレーション | 境界を有する1若しくはそれ以上の層を備える層状のバリア構造及び該バリア構造の製造方法 |
US7776478B2 (en) * | 2005-07-15 | 2010-08-17 | Cymbet Corporation | Thin-film batteries with polymer and LiPON electrolyte layers and method |
US7931989B2 (en) * | 2005-07-15 | 2011-04-26 | Cymbet Corporation | Thin-film batteries with soft and hard electrolyte layers and method |
US7345414B1 (en) | 2006-10-04 | 2008-03-18 | General Electric Company | Lamp for night vision system |
JP5647126B2 (ja) * | 2008-09-22 | 2014-12-24 | ベクトン・ディキンソン・アンド・カンパニーBecton, Dickinson And Company | 光分解化学的気相堆積法および/または熱化学的気相堆積法を使用して容器の内部を被覆するシステム、装置および方法 |
US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
US11996517B2 (en) | 2011-06-29 | 2024-05-28 | Space Charge, LLC | Electrochemical energy storage devices |
US9029809B2 (en) | 2012-11-30 | 2015-05-12 | Ultratech, Inc. | Movable microchamber system with gas curtain |
CN107578983A (zh) * | 2013-03-15 | 2018-01-12 | 应用材料公司 | 用于脉冲式光激发沉积与蚀刻的装置与方法 |
EP2989229B1 (en) | 2013-04-25 | 2019-06-05 | Polyvalor, Limited Partnership | Method for the photo-initiated chemical vapor deposition (picvd) of coatings |
US10143993B2 (en) | 2015-08-18 | 2018-12-04 | Lam Research Corporation | Radical generator and method for generating ammonia radicals |
EP3762989A4 (en) | 2018-03-07 | 2021-12-15 | Space Charge, LLC | THIN FILM SOLID STATE ENERGY STORAGE DEVICES |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3200018A (en) | 1962-01-29 | 1965-08-10 | Hughes Aircraft Co | Controlled epitaxial crystal growth by focusing electromagnetic radiation |
FR1345943A (fr) * | 1962-01-29 | 1963-12-13 | Hughes Aircraft Co | Procédé de croissance épitaxiale d'une matière semi-conductrice |
US3271180A (en) | 1962-06-19 | 1966-09-06 | Ibm | Photolytic processes for fabricating thin film patterns |
GB975497A (en) * | 1963-09-13 | 1964-11-18 | Temescal Metallurgical Corp | High vacuum observation apparatus |
US3490961A (en) | 1966-12-21 | 1970-01-20 | Sprague Electric Co | Method of producing silicon body |
DE1900116C3 (de) | 1969-01-02 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten |
DD107313A1 (es) * | 1973-03-08 | 1974-07-20 | ||
US4100418A (en) | 1977-03-04 | 1978-07-11 | Gene D. Hoffman | Method of and means for filtering the infrared rays from a source of UV radiation |
US4265932A (en) * | 1979-08-02 | 1981-05-05 | Hughes Aircraft Company | Mobile transparent window apparatus and method for photochemical vapor deposition |
US4340617A (en) | 1980-05-19 | 1982-07-20 | Massachusetts Institute Of Technology | Method and apparatus for depositing a material on a surface |
JPS6021224B2 (ja) * | 1980-10-08 | 1985-05-25 | 日本電気株式会社 | レーザー薄膜形成装置 |
US4348428A (en) | 1980-12-15 | 1982-09-07 | Board Of Regents For Oklahoma Agriculture And Mechanical Colleges Acting For And On Behalf Of Oklahoma State University Of Agriculture And Applied Sciences | Method of depositing doped amorphous semiconductor on a substrate |
-
1982
- 1982-05-13 US US06/377,738 patent/US4435445A/en not_active Expired - Lifetime
-
1983
- 1983-05-04 IN IN549/CAL/83A patent/IN159155B/en unknown
- 1983-05-05 IL IL68590A patent/IL68590A/xx unknown
- 1983-05-06 AU AU14306/83A patent/AU555506B2/en not_active Ceased
- 1983-05-09 BR BR8302417A patent/BR8302417A/pt unknown
- 1983-05-09 EP EP83302597A patent/EP0095275B1/en not_active Expired
- 1983-05-09 PH PH28868A patent/PH18523A/en unknown
- 1983-05-09 DE DE8383302597T patent/DE3370832D1/de not_active Expired
- 1983-05-09 AT AT83302597T patent/ATE26469T1/de not_active IP Right Cessation
- 1983-05-10 JP JP58081593A patent/JPS5964770A/ja active Pending
- 1983-05-11 ZA ZA833368A patent/ZA833368B/xx unknown
- 1983-05-12 MX MX197269A patent/MX163318A/es unknown
- 1983-05-13 CA CA000428153A patent/CA1209091A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1209091A (en) | 1986-08-05 |
AU555506B2 (en) | 1986-09-25 |
BR8302417A (pt) | 1984-01-10 |
EP0095275A2 (en) | 1983-11-30 |
EP0095275A3 (en) | 1984-01-25 |
IL68590A0 (en) | 1983-09-30 |
AU1430683A (en) | 1983-11-17 |
DE3370832D1 (en) | 1987-05-14 |
ZA833368B (en) | 1984-02-29 |
PH18523A (en) | 1985-08-02 |
EP0095275B1 (en) | 1987-04-08 |
ATE26469T1 (de) | 1987-04-15 |
MX163318A (es) | 1992-04-20 |
US4435445A (en) | 1984-03-06 |
IL68590A (en) | 1986-04-29 |
JPS5964770A (ja) | 1984-04-12 |
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