IL92362A0 - Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces - Google Patents

Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

Info

Publication number
IL92362A0
IL92362A0 IL92362A IL9236289A IL92362A0 IL 92362 A0 IL92362 A0 IL 92362A0 IL 92362 A IL92362 A IL 92362A IL 9236289 A IL9236289 A IL 9236289A IL 92362 A0 IL92362 A0 IL 92362A0
Authority
IL
Israel
Prior art keywords
solar cells
polymer surfaces
electrical shorts
preventing electrical
electrolytic etch
Prior art date
Application number
IL92362A
Other languages
English (en)
Original Assignee
Minnesota Mining & Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining & Mfg filed Critical Minnesota Mining & Mfg
Publication of IL92362A0 publication Critical patent/IL92362A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S136/00—Batteries: thermoelectric and photoelectric
    • Y10S136/29—Testing, calibrating, treating, e.g. aging

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
IL92362A 1988-12-07 1989-11-20 Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces IL92362A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/281,099 US5055416A (en) 1988-12-07 1988-12-07 Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

Publications (1)

Publication Number Publication Date
IL92362A0 true IL92362A0 (en) 1990-07-26

Family

ID=23075950

Family Applications (1)

Application Number Title Priority Date Filing Date
IL92362A IL92362A0 (en) 1988-12-07 1989-11-20 Electrolytic etch for preventing electrical shorts in solar cells on polymer surfaces

Country Status (4)

Country Link
US (1) US5055416A (xx)
EP (1) EP0372930A3 (xx)
JP (1) JPH02202067A (xx)
IL (1) IL92362A0 (xx)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139970A (en) * 1989-06-01 1992-08-18 Semiconductor Energy Laboratory Co., Ltd. Electric device and manufacturing method of the same
US5162239A (en) * 1990-12-27 1992-11-10 Xerox Corporation Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors
JPH04266068A (ja) * 1991-02-20 1992-09-22 Canon Inc 光電変換素子及びその製造方法
US5290986A (en) * 1991-10-22 1994-03-01 International Business Machines Corporation Thermally assisted shorts removal process for glass ceramic product using an RF field
US5346850A (en) * 1992-10-29 1994-09-13 Regents Of The University Of California Crystallization and doping of amorphous silicon on low temperature plastic
US5648296A (en) * 1994-07-27 1997-07-15 General Electric Company Post-fabrication repair method for thin film imager devices
US5948697A (en) * 1996-05-23 1999-09-07 Lsi Logic Corporation Catalytic acceleration and electrical bias control of CMP processing
GB9610878D0 (en) * 1996-05-24 1996-07-31 Philips Electronics Nv Electronic device manufacture
US6737360B2 (en) * 1999-12-30 2004-05-18 Intel Corporation Controlled potential anodic etching process for the selective removal of conductive thin films
DE10032279B4 (de) * 2000-07-03 2006-09-28 Christian-Albrechts-Universität Zu Kiel Elektrische Passivierung der Randgebiete von Solarzellen
US6780783B2 (en) * 2001-08-29 2004-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method of wet etching low dielectric constant materials
WO2004050961A1 (en) * 2002-11-27 2004-06-17 University Of Toledo, The Integrated photoelectrochemical cell and system having a liquid electrolyte
US7667133B2 (en) * 2003-10-29 2010-02-23 The University Of Toledo Hybrid window layer for photovoltaic cells
WO2005101510A2 (en) * 2004-04-16 2005-10-27 The University Of Toledo Light-assisted electrochemical shunt passivation for photovoltaic devices
WO2006110613A2 (en) * 2005-04-11 2006-10-19 The University Of Toledo Integrated photovoltaic-electrolysis cell
WO2009073501A2 (en) * 2007-11-30 2009-06-11 University Of Toledo System for diagnosis and treatment of photovoltaic and other semiconductor devices
WO2009120974A2 (en) * 2008-03-28 2009-10-01 University Of Toledo System for selectively filling pin holes, weak shunts and/or scribe lines in photovoltaic devices and photovoltaic cells made thereby
DE102010052863A1 (de) * 2010-12-01 2012-06-06 Forschungszentrum Jülich GmbH Verfahren zur Herstellung eines Solarmoduls und ein Solarmodul
WO2015183534A1 (en) 2014-05-28 2015-12-03 3M Innovative Properties Company Mems devices on flexible substrate
US11189432B2 (en) 2016-10-24 2021-11-30 Indian Institute Of Technology, Guwahati Microfluidic electrical energy harvester

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166918A (en) * 1978-07-19 1979-09-04 Rca Corporation Method of removing the effects of electrical shorts and shunts created during the fabrication process of a solar cell
US4385971A (en) * 1981-06-26 1983-05-31 Rca Corporation Electrolytic etch for eliminating shorts and shunts in large area amorphous silicon solar cells
US4640002A (en) * 1982-02-25 1987-02-03 The University Of Delaware Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
US4488349A (en) * 1982-04-09 1984-12-18 Nissan Motor Company, Limited Method of repairing shorts in parallel connected vertical semiconductor devices by selective anodization
US4451970A (en) * 1982-10-21 1984-06-05 Energy Conversion Devices, Inc. System and method for eliminating short circuit current paths in photovoltaic devices
US4510674A (en) * 1982-10-21 1985-04-16 Sovonics Solar Systems System for eliminating short circuit current paths in photovoltaic devices
DE3312053C2 (de) * 1983-04-02 1985-03-28 Nukem Gmbh, 6450 Hanau Verfahren zum Verhindern von Kurz- oder Nebenschlüssen in einer großflächigen Dünnschicht-Solarzelle
US4471036A (en) * 1983-06-29 1984-09-11 The United States Of America As Represented By The United States Department Of Energy Electrochemical photovoltaic cells and electrodes
US4510675A (en) * 1983-08-03 1985-04-16 Sovonics Solar Systems System for eliminating short and latent short circuit current paths in photovoltaic devices
US4543171A (en) * 1984-03-22 1985-09-24 Rca Corporation Method for eliminating defects in a photodetector
AU583423B2 (en) * 1985-09-21 1989-04-27 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device free from the electrical shortage through a semiconductor layer and method for manufacturing same
AU580903B2 (en) * 1986-01-29 1989-02-02 Semiconductor Energy Laboratory Co. Ltd. Method for manufacturing photoelectric conversion devices
EP0236938A3 (de) * 1986-03-11 1989-11-15 Siemens Aktiengesellschaft Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von Dünnschichtsolarzellen aus amorphem Silizium
US4774193A (en) * 1986-03-11 1988-09-27 Siemens Aktiengesellschaft Method for avoiding shorts in the manufacture of layered electrical components
US4729970A (en) * 1986-09-15 1988-03-08 Energy Conversion Devices, Inc. Conversion process for passivating short circuit current paths in semiconductor devices
US4749454A (en) * 1986-11-17 1988-06-07 Solarex Corporation Method of removing electrical shorts and shunts from a thin-film semiconductor device

Also Published As

Publication number Publication date
JPH02202067A (ja) 1990-08-10
EP0372930A2 (en) 1990-06-13
US5055416A (en) 1991-10-08
EP0372930A3 (en) 1990-07-04

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