IL300758A - The composition, its use and a process for selective burning of silicon-germanium material - Google Patents
The composition, its use and a process for selective burning of silicon-germanium materialInfo
- Publication number
- IL300758A IL300758A IL300758A IL30075823A IL300758A IL 300758 A IL300758 A IL 300758A IL 300758 A IL300758 A IL 300758A IL 30075823 A IL30075823 A IL 30075823A IL 300758 A IL300758 A IL 300758A
- Authority
- IL
- Israel
- Prior art keywords
- weight
- acid
- silicon
- layer
- composition
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20192464 | 2020-08-24 | ||
| PCT/EP2021/072975 WO2022043165A1 (en) | 2020-08-24 | 2021-08-18 | Composition, its use and a process for selectively etching silicon-germanium material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL300758A true IL300758A (en) | 2023-04-01 |
Family
ID=72240282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL300758A IL300758A (en) | 2020-08-24 | 2021-08-18 | The composition, its use and a process for selective burning of silicon-germanium material |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20230326759A1 (https=) |
| EP (1) | EP4200895A1 (https=) |
| JP (1) | JP7754920B2 (https=) |
| KR (1) | KR20230054674A (https=) |
| CN (1) | CN116195036A (https=) |
| IL (1) | IL300758A (https=) |
| WO (1) | WO2022043165A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022008306A1 (en) * | 2020-07-09 | 2022-01-13 | Basf Se | Composition comprising a siloxane and an alkane for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below |
| KR20250148723A (ko) * | 2023-03-24 | 2025-10-14 | 후지필름 가부시키가이샤 | 처리액, 처리 방법 |
| WO2025064429A1 (en) * | 2023-09-22 | 2025-03-27 | Entegris, Inc. | Etchant compositions and related methods |
| WO2026022021A1 (en) | 2024-07-25 | 2026-01-29 | Basf Se | Composition, its use and a process for selectively etching silicon-germanium layers |
| WO2026042511A1 (ja) * | 2024-08-20 | 2026-02-26 | 富士フイルム株式会社 | 薬液、被処理物の処理方法、半導体デバイスの製造方法 |
| CN119979170B (zh) * | 2024-12-13 | 2026-03-03 | 湖北兴福电子材料股份有限公司 | 一种适用于微电子器件从硅锗/硅叠层中相对于硅选择性去除硅锗的组合物 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11186771B2 (en) | 2017-06-05 | 2021-11-30 | Versum Materials Us, Llc | Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device |
| US10879076B2 (en) | 2017-08-25 | 2020-12-29 | Versum Materials Us, Llc | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/silicon stack during manufacture of a semiconductor device |
| US10934484B2 (en) | 2018-03-09 | 2021-03-02 | Versum Materials Us, Llc | Etching solution for selectively removing silicon-germanium alloy from a silicon-germanium/ germanium stack during manufacture of a semiconductor device |
| CN115651656B (zh) | 2018-12-03 | 2024-09-03 | 富士胶片电子材料美国有限公司 | 蚀刻组合物 |
| JP7450334B2 (ja) | 2018-12-27 | 2024-03-15 | 東京応化工業株式会社 | エッチング液、及び半導体素子の製造方法 |
-
2021
- 2021-08-18 KR KR1020237005999A patent/KR20230054674A/ko active Pending
- 2021-08-18 CN CN202180061341.8A patent/CN116195036A/zh active Pending
- 2021-08-18 US US18/042,315 patent/US20230326759A1/en active Pending
- 2021-08-18 JP JP2023513264A patent/JP7754920B2/ja active Active
- 2021-08-18 IL IL300758A patent/IL300758A/en unknown
- 2021-08-18 EP EP21762499.8A patent/EP4200895A1/en active Pending
- 2021-08-18 WO PCT/EP2021/072975 patent/WO2022043165A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230054674A (ko) | 2023-04-25 |
| US20230326759A1 (en) | 2023-10-12 |
| JP7754920B2 (ja) | 2025-10-15 |
| WO2022043165A1 (en) | 2022-03-03 |
| JP2023539238A (ja) | 2023-09-13 |
| TW202219323A (zh) | 2022-05-16 |
| CN116195036A (zh) | 2023-05-30 |
| EP4200895A1 (en) | 2023-06-28 |
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