IL163727A0 - CdTe single crystal and CdTe polycrystal, and method for preparation thereof - Google Patents
CdTe single crystal and CdTe polycrystal, and method for preparation thereofInfo
- Publication number
- IL163727A0 IL163727A0 IL16372702A IL16372702A IL163727A0 IL 163727 A0 IL163727 A0 IL 163727A0 IL 16372702 A IL16372702 A IL 16372702A IL 16372702 A IL16372702 A IL 16372702A IL 163727 A0 IL163727 A0 IL 163727A0
- Authority
- IL
- Israel
- Prior art keywords
- cdte
- preparation
- single crystal
- polycrystal
- cdte single
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002076313A JP4083449B2 (ja) | 2002-03-19 | 2002-03-19 | CdTe単結晶の製造方法 |
PCT/JP2002/012486 WO2003078703A1 (fr) | 2002-03-19 | 2002-11-29 | Monocristal cdte et polycristal cdte et leur procede de fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
IL163727A0 true IL163727A0 (en) | 2005-12-18 |
Family
ID=28035436
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL16372702A IL163727A0 (en) | 2002-03-19 | 2002-11-29 | CdTe single crystal and CdTe polycrystal, and method for preparation thereof |
IL163727A IL163727A (he) | 2002-03-19 | 2004-08-25 | מגיש יחיד של CdTe ורב גבישי של CdTe והשיטה להכנתו |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL163727A IL163727A (he) | 2002-03-19 | 2004-08-25 | מגיש יחיד של CdTe ורב גבישי של CdTe והשיטה להכנתו |
Country Status (8)
Country | Link |
---|---|
US (1) | US7211142B2 (he) |
EP (2) | EP1508632B1 (he) |
JP (1) | JP4083449B2 (he) |
KR (1) | KR100876925B1 (he) |
CN (1) | CN1318662C (he) |
IL (2) | IL163727A0 (he) |
TW (1) | TWI263712B (he) |
WO (1) | WO2003078703A1 (he) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006054580A1 (ja) * | 2004-11-18 | 2006-05-26 | Nippon Mining & Metals Co., Ltd. | CdTe系化合物半導体単結晶 |
CA2510415C (en) * | 2005-06-21 | 2012-08-14 | Redlen Technologies Inc. | A cold-walled vessel process for compounding, homogenizing and consolidating semiconductor compounds |
CN101220502B (zh) * | 2007-09-30 | 2010-05-19 | 西北工业大学 | 垂直布里奇曼生长炉及炉内温度场优化方法 |
EP2244294B1 (en) * | 2008-02-12 | 2018-06-27 | Shimadzu Corporation | Method for manufacturing radiation detector |
EP2333584B1 (en) * | 2008-09-10 | 2014-11-19 | Shimadzu Corporation | Radiation detector |
CA2649322C (en) * | 2008-09-30 | 2011-02-01 | 5N Plus Inc. | Cadmium telluride production process |
CN101770776B (zh) | 2008-12-29 | 2011-06-08 | 华为技术有限公司 | 瞬态信号的编码方法和装置、解码方法和装置及处理系统 |
WO2010113222A1 (ja) | 2009-04-03 | 2010-10-07 | 株式会社島津製作所 | 放射線検出器の製造方法および放射線検出器並びに放射線撮像装置 |
EP2554720B1 (en) * | 2010-03-29 | 2019-04-24 | JX Nippon Mining & Metals Corporation | Method for synthesizing group ii-vi compound semiconductor polycrystals |
JP2013178098A (ja) * | 2010-07-06 | 2013-09-09 | Shimadzu Corp | 放射線検出器およびそれを製造する方法 |
JP5567671B2 (ja) * | 2010-07-06 | 2014-08-06 | 株式会社島津製作所 | 放射線検出器の製造方法 |
CN103074668A (zh) * | 2013-01-11 | 2013-05-01 | 元亮科技有限公司 | 水平温度梯度法生长大尺寸高温晶体的装置及方法 |
JP6018532B2 (ja) * | 2013-03-29 | 2016-11-02 | Jx金属株式会社 | 半導体ウエハ、放射線検出素子、放射線検出器、および化合物半導体単結晶の製造方法 |
JP6149103B2 (ja) * | 2013-03-29 | 2017-06-14 | Jx金属株式会社 | 光電変換素子用化合物半導体単結晶インゴット、光電変換素子、および光電変換素子用化合物半導体単結晶インゴットの製造方法 |
CN103409800B (zh) * | 2013-07-17 | 2016-01-20 | 武汉高芯科技有限公司 | 大直径碲化镉或碲锌镉多晶棒料合成装置及制备方法 |
CN105401216A (zh) * | 2015-12-15 | 2016-03-16 | 河南西格马晶体科技有限公司 | 一种温场梯度水平移动法制备片状单晶的方法及装置 |
WO2018201308A1 (en) * | 2017-05-03 | 2018-11-08 | Shenzhen Xpectvision Technology Co., Ltd. | Method of making radiation detector |
CN107201548B (zh) * | 2017-05-09 | 2019-07-19 | 西北工业大学 | 碲化锌单晶的制备方法 |
CN107675251B (zh) * | 2017-09-28 | 2019-07-16 | 哈尔滨工业大学 | 一种高纯硒化镉多晶材料的气相合成方法 |
CN108624949B (zh) * | 2018-04-26 | 2021-02-09 | 长安大学 | 一种碲镁镉单晶材料的制备方法、单晶材料及其应用 |
CN111809240B (zh) * | 2020-06-12 | 2022-01-18 | 先导薄膜材料(广东)有限公司 | 一种高纯碲化镉的制备方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4141777A (en) * | 1974-07-19 | 1979-02-27 | Matveev Oleg A | Method of preparing doped single crystals of cadmium telluride |
US3962669A (en) * | 1974-07-24 | 1976-06-08 | Tyco Laboratories, Inc. | Electrical contact structure for semiconductor body |
US3999071A (en) * | 1975-08-26 | 1976-12-21 | Etat Francais | Nuclear detectors sensitive to alpha, beta, and gamma rays and to thermal neutrons and to methods of treatment of crystals of such detectors |
CN85101849B (zh) * | 1985-04-01 | 1986-12-03 | 中国科学院长春物理研究所 | 制备高纯度ⅱb-ⅵa族化合物的新方法 |
JPH0282573A (ja) * | 1988-09-20 | 1990-03-23 | Canon Inc | 光電変換装置 |
JPH03177394A (ja) * | 1989-12-07 | 1991-08-01 | Hitachi Cable Ltd | 化合物半導体の結晶引上装置 |
JPH03295899A (ja) | 1990-04-10 | 1991-12-26 | Nikko Kyodo Co Ltd | CdTe単結晶の製造方法 |
JPH07108839B2 (ja) * | 1990-08-10 | 1995-11-22 | 株式会社ジャパンエナジー | CdTe単結晶の製造方法 |
JP2517803B2 (ja) | 1991-06-07 | 1996-07-24 | 株式会社ジャパンエナジー | Ii−vi族化合物半導体多結晶の合成方法 |
JPH05283729A (ja) | 1992-03-30 | 1993-10-29 | Japan Energy Corp | 半導体装置の製造方法 |
JPH06345598A (ja) * | 1993-06-04 | 1994-12-20 | Japan Energy Corp | 放射線検出素子用CdTe結晶およびその製造方法 |
JPH0769778A (ja) * | 1993-09-03 | 1995-03-14 | Sumitomo Metal Ind Ltd | 単結晶成長装置 |
JP3708142B2 (ja) | 1994-03-09 | 2005-10-19 | ナトコ株式会社 | 液晶用スペーサの製造方法および液晶用スペーサ |
JPH07300387A (ja) | 1994-04-28 | 1995-11-14 | Japan Energy Corp | 化合物半導体結晶の製造方法 |
JP2844430B2 (ja) | 1995-02-16 | 1999-01-06 | 株式会社ジャパンエナジー | 単結晶の成長方法 |
JP3153436B2 (ja) | 1995-03-28 | 2001-04-09 | 株式会社ジャパンエナジー | CdTe結晶の製造方法 |
JPH09124310A (ja) | 1995-10-27 | 1997-05-13 | Sumitomo Metal Mining Co Ltd | CdTe結晶の製造方法 |
JPH11255575A (ja) * | 1998-03-12 | 1999-09-21 | Super Silicon Kenkyusho:Kk | 単結晶引上げ装置及びその冷却方法 |
CA2292853A1 (en) | 1998-12-21 | 2000-06-21 | Pirelli Cavi E Sistemi S.P.A. | Process and apparatus for synthesizing and growing crystals |
EP1013801A1 (en) * | 1998-12-21 | 2000-06-28 | PIRELLI CAVI E SISTEMI S.p.A. | Process and apparatus for synthesizing and growing crystals |
JP2001335400A (ja) | 2000-05-24 | 2001-12-04 | Furukawa Co Ltd | CdTe単結晶の製造方法 |
-
2002
- 2002-03-19 JP JP2002076313A patent/JP4083449B2/ja not_active Expired - Lifetime
- 2002-11-29 CN CNB028285980A patent/CN1318662C/zh not_active Expired - Lifetime
- 2002-11-29 US US10/505,588 patent/US7211142B2/en not_active Expired - Lifetime
- 2002-11-29 KR KR1020047014004A patent/KR100876925B1/ko active IP Right Grant
- 2002-11-29 EP EP02783694A patent/EP1508632B1/en not_active Expired - Lifetime
- 2002-11-29 EP EP11159885A patent/EP2336400A3/en not_active Withdrawn
- 2002-11-29 IL IL16372702A patent/IL163727A0/xx active IP Right Grant
- 2002-11-29 WO PCT/JP2002/012486 patent/WO2003078703A1/ja active Application Filing
-
2003
- 2003-03-18 TW TW092106101A patent/TWI263712B/zh not_active IP Right Cessation
-
2004
- 2004-08-25 IL IL163727A patent/IL163727A/he unknown
Also Published As
Publication number | Publication date |
---|---|
CN1318662C (zh) | 2007-05-30 |
EP1508632A1 (en) | 2005-02-23 |
US7211142B2 (en) | 2007-05-01 |
EP1508632A4 (en) | 2008-10-15 |
WO2003078703A1 (fr) | 2003-09-25 |
EP1508632B1 (en) | 2012-02-29 |
KR20040089713A (ko) | 2004-10-21 |
KR100876925B1 (ko) | 2009-01-07 |
US20050170649A1 (en) | 2005-08-04 |
JP2003277197A (ja) | 2003-10-02 |
TWI263712B (en) | 2006-10-11 |
JP4083449B2 (ja) | 2008-04-30 |
EP2336400A3 (en) | 2011-11-23 |
TW200307066A (en) | 2003-12-01 |
IL163727A (he) | 2007-10-31 |
EP2336400A2 (en) | 2011-06-22 |
CN1623014A (zh) | 2005-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IL163727A0 (en) | CdTe single crystal and CdTe polycrystal, and method for preparation thereof | |
EP1548160A4 (en) | METHOD FOR PRODUCING A CRYSTAL FROM A NITRIDE OF A GROUP III ELEMENT AND A TRANSPARENT CRYSTAL MADE FROM A NITRIDE OF AN ELEMENT OF GROUP III | |
HK1082520A1 (en) | T cell vaccine and the method for preparing the same | |
AU2002300573A1 (en) | Photovoltaic Device and Method for Preparing the Same | |
AU2003299899A1 (en) | Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same | |
EP1488790A4 (en) | SOLID PREPARATION CONTAINING A MONOCRYSTALLINE FORM | |
EP1193333A4 (en) | METHOD FOR PRODUCING SILICON CRYSTALS AND SILICON CRYSTAL | |
EP1679393A4 (en) | PIEZOELECTRIC MONOCRYSTAL, PIEZOELECTRIC MONOCRYSTAL ELEMENT AND PROCESS FOR PREPARING THE SAME | |
AU2002300570A1 (en) | Photovoltaic Device and Method for Preparing the Same | |
AU2003211024A1 (en) | Energy efficient method for growing polycrystalline silicon | |
EP1581251A4 (en) | HUMAN GROWTH HORMONE CRYSTALS AND CORRESPONDING PREPARATION METHODS | |
AU2003296082A1 (en) | Liquid mixture, structure, and method for forming structure | |
EP1498517A4 (en) | PROCESS FOR PRODUCING MONOCRYSTALLINE SILICON, MONOCRYSTALLINE SILICON, AND SILICON PLATE | |
EP1549786A4 (en) | PROCESS FOR GROWING SOLID STATE MONOCRYSTALS | |
EP1498516A4 (en) | PROCESS FOR PRODUCING MONOCRYSTALLINE SILICON, PROCESS FOR PRODUCING MONOCRYSTALLINE SILICON RINGS, CRYSTAL GERM FOR SINGLE CRYSTALLINE SILICON PRODUCTION, MONOCRYSTALLINE SILICON INGOT, AND MONOCRYSTAL SILICON SINK | |
EP1502972A4 (en) | SINGLE CRYSTAL SILICON PLATE AND EPITAXIAL PLATE, AND METHOD FOR PRODUCING A SINGLE SILICON CRYSTAL | |
AU2003272882A1 (en) | Silicon carbide single crystal and method and apparatus for producing the same | |
EP1431425A4 (en) | APPARATUS AND METHOD FOR MANUFACTURING SINGLE CRYSTALLINE SEMICONDUCTOR AND MONOCRYSTALLINE INGOT | |
AU2002249835A1 (en) | Efg crystal growth apparatus and method | |
EP1485524A4 (en) | APPARATUS FOR THE CRYSTALLOGENESIS OF MONOCRYSTALLINE II-VI AND III-V COMPOUNDS | |
IL164327A0 (en) | Crystalline n-trans-4-isopropylcyclohexylcarbonyl d-phenylalanine and processes for the preparation thereof | |
EP1650332A4 (en) | PROCESS FOR CRYSTAL PRODUCTION AND CRYSTAL | |
AU2003228739A1 (en) | Apparatus, system and method to reduce wafer warpage | |
AU2003227243A1 (en) | Thermo-electric conversion material and method for preparation thereof | |
EP1624094A4 (en) | PROCESS FOR PRODUCING MONOCRYSTAL AND MONOCRYSTAL OBTAINED BY THIS PROCESS |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FF | Patent granted | ||
KB | Patent renewed |