IL154910D0 - Laser beam machining method and laser beam machining device - Google Patents

Laser beam machining method and laser beam machining device

Info

Publication number
IL154910D0
IL154910D0 IL15491001A IL15491001A IL154910D0 IL 154910 D0 IL154910 D0 IL 154910D0 IL 15491001 A IL15491001 A IL 15491001A IL 15491001 A IL15491001 A IL 15491001A IL 154910 D0 IL154910 D0 IL 154910D0
Authority
IL
Israel
Prior art keywords
laser beam
beam machining
machining device
machining method
method
Prior art date
Application number
IL15491001A
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
Priority to JP2000278306 priority Critical
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Priority to PCT/JP2001/007954 priority patent/WO2002022301A1/en
Publication of IL154910D0 publication Critical patent/IL154910D0/en
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18763489&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IL154910(D0) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
    • B23K20/023Thermo-compression bonding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/16Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating with interposition of special material to facilitate connection of the parts, e.g. material for absorbing or producing gas
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/22Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded
    • B23K20/233Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating taking account of the properties of the materials to be welded without ferrous layer
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/26Auxiliary equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • B23K26/032Observing, e.g. monitoring, the workpiece using optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • B23K26/034Observing the temperature of the workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046Automatically focusing the laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/066Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073Shaping the laser spot
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/16Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70Auxiliary operations or equipment
    • B23K26/702Auxiliary equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222Scoring using a focussed radiation beam, e.g. laser
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/023Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/08Severing cooled glass by fusing, i.e. by melting through the glass
    • C03B33/082Severing cooled glass by fusing, i.e. by melting through the glass using a focussed radiation beam, e.g. laser
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/09Severing cooled glass by thermal shock
    • C03B33/091Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/10Glass-cutting tools, e.g. scoring tools
    • C03B33/102Glass-cutting tools, e.g. scoring tools involving a focussed radiation beam, e.g. lasers
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B65CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65GTRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G2249/00Aspects relating to conveying systems for the manufacture of fragile sheets
    • B65G2249/04Arrangements of vacuum systems or suction cups
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production
    • Y02P40/57Reduction of reject rates; Improving the yield
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00Cutting
    • Y10T83/02Other than completely through work thickness
    • Y10T83/0333Scoring
    • Y10T83/0341Processes
IL15491001A 2000-09-13 2001-09-13 Laser beam machining method and laser beam machining device IL154910D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000278306 2000-09-13
PCT/JP2001/007954 WO2002022301A1 (en) 2000-09-13 2001-09-13 Laser beam machining method and laser beam machining device

Publications (1)

Publication Number Publication Date
IL154910D0 true IL154910D0 (en) 2003-10-31

Family

ID=18763489

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15491001A IL154910D0 (en) 2000-09-13 2001-09-13 Laser beam machining method and laser beam machining device

Country Status (12)

Country Link
US (21) US6992026B2 (en)
EP (13) EP2218539A1 (en)
JP (4) JP4659300B2 (en)
KR (18) KR100853055B1 (en)
CN (25) CN101670484B (en)
AT (1) AT552064T (en)
AU (1) AU8622701A (en)
ES (5) ES2527922T3 (en)
IL (1) IL154910D0 (en)
SG (3) SG2009061698A (en)
TW (2) TWI250060B (en)
WO (1) WO2002022301A1 (en)

Families Citing this family (508)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI255934B (en) * 1998-12-04 2006-06-01 Samsung Electronics Co Ltd A substrate and a liquid crystal display panel capable of being cut by using a laser and a method for manufacturing the same
US6548370B1 (en) * 1999-08-18 2003-04-15 Semiconductor Energy Laboratory Co., Ltd. Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces
JP4659300B2 (en) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 Laser processing method and semiconductor chip manufacturing method
CN1311528C (en) * 2001-10-31 2007-04-18 三星钻石工业股份有限公司 Method for forming scribe line on semiconductor wafer, and scribe line forming device
WO2003076119A1 (en) 2002-03-12 2003-09-18 Hamamatsu Photonics K.K. Method of cutting processed object
EP1494271B1 (en) * 2002-03-12 2011-11-16 Hamamatsu Photonics K.K. Method for dicing substrate
TWI520269B (en) * 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
JP2004022936A (en) * 2002-06-19 2004-01-22 Disco Abrasive Syst Ltd Semiconductor-wafer dividing method and semiconductor-wafer dividing apparatus
JP2004066293A (en) * 2002-08-06 2004-03-04 Namiki Precision Jewel Co Ltd Laser beam machining method
JP4459514B2 (en) 2002-09-05 2010-04-28 株式会社半導体エネルギー研究所 Laser marking device
US7294454B1 (en) * 2002-09-30 2007-11-13 Translume, Inc. Waveguide fabrication methods and devices
EP1588793B1 (en) * 2002-12-05 2012-03-21 Hamamatsu Photonics K.K. Laser processing devices
JP2004188422A (en) * 2002-12-06 2004-07-08 Hamamatsu Photonics Kk Device and method for machining laser beam
US6756562B1 (en) 2003-01-10 2004-06-29 Kabushiki Kaisha Toshiba Semiconductor wafer dividing apparatus and semiconductor device manufacturing method
JP3825753B2 (en) 2003-01-14 2006-09-27 株式会社東芝 Manufacturing method of semiconductor device
FR2852250B1 (en) * 2003-03-11 2009-07-24 Jean Luc Jouvin Protective sheath for cannula, an injection kit comprising such ankle and needle equipped with such ankle
AU2003220842A1 (en) * 2003-03-12 2004-09-30 Hamamatsu Photonics K.K. Laser beam machining method
AU2003220847A1 (en) 2003-03-12 2004-09-30 Hamamatsu Photonics K.K. Laser beam machining method
KR20060008921A (en) * 2003-04-25 2006-01-27 닛토덴코 가부시키가이샤 Method of producing laser-processed product and adhesive sheet, for laser processing used therefor
KR101121495B1 (en) 2003-05-12 2012-03-15 가부시키가이샤 토쿄 세이미쯔 Method and apparatus for dividing plate-like member
JP2004343008A (en) * 2003-05-19 2004-12-02 Disco Abrasive Syst Ltd Workpiece dividing method utilizing laser beam
KR101058800B1 (en) 2003-05-22 2011-08-23 가부시키가이샤 토쿄 세이미쯔 Laser dicing equipment
KR20060055457A (en) * 2003-05-22 2006-05-23 가부시키가이샤 토쿄 세이미쯔 Dicing apparatus
JP4494728B2 (en) * 2003-05-26 2010-06-30 株式会社ディスコ Non-metallic substrate division method
TWI401326B (en) * 2003-06-06 2013-07-11 Hitachi Chemical Co Ltd Sticking sheet unified with dicing tape
JP2005019667A (en) * 2003-06-26 2005-01-20 Disco Abrasive Syst Ltd Method for dividing semiconductor wafer by utilizing laser beam
JP4256214B2 (en) 2003-06-27 2009-04-22 株式会社ディスコ Plate-shaped material dividing device
JP2005028423A (en) * 2003-07-09 2005-02-03 Disco Abrasive Syst Ltd Laser beam machining method and device
JP2005032903A (en) * 2003-07-10 2005-02-03 Oki Electric Ind Co Ltd Semiconductor device and its manufacturing method
US7605344B2 (en) 2003-07-18 2009-10-20 Hamamatsu Photonics K.K. Laser beam machining method, laser beam machining apparatus, and laser beam machining product
JP4703983B2 (en) * 2003-07-18 2011-06-15 浜松ホトニクス株式会社 Cutting method
JP4554901B2 (en) * 2003-08-12 2010-09-29 株式会社ディスコ Wafer processing method
JP4563097B2 (en) * 2003-09-10 2010-10-13 浜松ホトニクス株式会社 Semiconductor substrate cutting method
JP2005086175A (en) * 2003-09-11 2005-03-31 Hamamatsu Photonics Kk Method of manufacturing semiconductor thin film, semiconductor thin film, semiconductor thin-film chip, electron tube and light detector
JP4590174B2 (en) 2003-09-11 2010-12-01 株式会社ディスコ Wafer processing method
JP4398686B2 (en) * 2003-09-11 2010-01-13 株式会社ディスコ Wafer processing method
EP1518634A1 (en) * 2003-09-23 2005-03-30 Advanced Laser Separation International (ALSI) B.V. A method of and a device for separating semiconductor elements formed in a wafer of semiconductor material
JP4408361B2 (en) 2003-09-26 2010-02-03 株式会社ディスコ Wafer division method
JP4251054B2 (en) * 2003-10-01 2009-04-08 株式会社デンソー Manufacturing method of semiconductor device
JP2005129607A (en) * 2003-10-22 2005-05-19 Disco Abrasive Syst Ltd Method of dividing wafer
JP2005142303A (en) 2003-11-05 2005-06-02 Disco Abrasive Syst Ltd Method of dividing silicon wafer, and apparatus thereof
JP2005138143A (en) * 2003-11-06 2005-06-02 Disco Abrasive Syst Ltd Machining apparatus using laser beam
JP2005144487A (en) * 2003-11-13 2005-06-09 Seiko Epson Corp Laser beam machining device and laser beam machining method
JP4601965B2 (en) 2004-01-09 2010-12-22 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
JP4509578B2 (en) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
JP4598407B2 (en) * 2004-01-09 2010-12-15 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
JP2005203541A (en) 2004-01-15 2005-07-28 Disco Abrasive Syst Ltd Laser-processing method for wafer
JP2005222989A (en) * 2004-02-03 2005-08-18 Disco Abrasive Syst Ltd Method for dividing wafer
US7179722B2 (en) * 2004-02-03 2007-02-20 Disco Corporation Wafer dividing method
CN100428418C (en) * 2004-02-09 2008-10-22 株式会社迪斯科 Method for cutting wafer
JP2005268752A (en) * 2004-02-19 2005-09-29 Canon Inc Method of laser cutting, workpiece and semiconductor-element chip
JP2005236082A (en) 2004-02-20 2005-09-02 Nitto Denko Corp Pressure sensitive adhesive sheet for laser dicing, and its manufacturing method
WO2005084874A1 (en) * 2004-03-05 2005-09-15 Olympus Corporation Laser processing equipment
JP2005252196A (en) * 2004-03-08 2005-09-15 Toshiba Corp Semiconductor device and its manufacturing method
JP2005252126A (en) * 2004-03-08 2005-09-15 Disco Abrasive Syst Ltd Method of working wafer
JP4453407B2 (en) * 2004-03-15 2010-04-21 三菱電機株式会社 Laser processing equipment
FI120082B (en) * 2004-03-18 2009-06-30 Antti Salminen Process for processing materials with high power frequency electromagnetic radiation
US7511247B2 (en) 2004-03-22 2009-03-31 Panasonic Corporation Method of controlling hole shape during ultrafast laser machining by manipulating beam polarization
JP4514490B2 (en) * 2004-03-29 2010-07-28 日東電工株式会社 Semiconductor wafer fragmentation method
KR20070005713A (en) * 2004-03-30 2007-01-10 하마마츠 포토닉스 가부시키가이샤 Laser processing method and semiconductor chip
WO2005098915A1 (en) * 2004-03-30 2005-10-20 Hamamatsu Photonics K.K. Laser processing method and semiconductor chip
JP4536407B2 (en) * 2004-03-30 2010-09-01 浜松ホトニクス株式会社 Laser processing method and object to be processed
DE102004024475A1 (en) * 2004-05-14 2005-12-01 Lzh Laserzentrum Hannover E.V. Method and device for separating semiconductor materials
JP4694795B2 (en) * 2004-05-18 2011-06-08 株式会社ディスコ Wafer division method
JP4631044B2 (en) * 2004-05-26 2011-02-23 国立大学法人北海道大学 Laser processing method and apparatus
US7491288B2 (en) * 2004-06-07 2009-02-17 Fujitsu Limited Method of cutting laminate with laser and laminate
JP4938998B2 (en) * 2004-06-07 2012-05-23 富士通株式会社 Substrate and laminate cutting method, and laminate production method
US8148211B2 (en) * 2004-06-18 2012-04-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US7935941B2 (en) * 2004-06-18 2011-05-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US7923306B2 (en) * 2004-06-18 2011-04-12 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots
US8383982B2 (en) * 2004-06-18 2013-02-26 Electro Scientific Industries, Inc. Methods and systems for semiconductor structure processing using multiple laser beam spots
EP1614499A1 (en) * 2004-07-09 2006-01-11 Advanced Laser Separation International (ALSI) B.V. Laser cutting method and arrangement for performing said method
JP4634089B2 (en) 2004-07-30 2011-02-23 浜松ホトニクス株式会社 Laser processing method
CN101434010B (en) * 2004-08-06 2011-04-13 浜松光子学株式会社 Laser processing method and semiconductor device
US7550367B2 (en) * 2004-08-17 2009-06-23 Denso Corporation Method for separating semiconductor substrate
JP2006108459A (en) * 2004-10-07 2006-04-20 Disco Abrasive Syst Ltd Laser machining method and device of silicon wafer
JP4754801B2 (en) * 2004-10-13 2011-08-24 浜松ホトニクス株式会社 Laser processing method
JP2006114691A (en) * 2004-10-14 2006-04-27 Disco Abrasive Syst Ltd Division method of wafer
KR20070069187A (en) 2004-10-20 2007-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Laser irradiation, laser irradiation apparatus and method for manufacturing semiconductor device
JP2006123228A (en) * 2004-10-27 2006-05-18 Disco Abrasive Syst Ltd Laser processing method and laser processing apparatus
KR20060040277A (en) * 2004-11-05 2006-05-10 엘지.필립스 엘시디 주식회사 Method for cutting of substrate using femtosecond laser
KR101074408B1 (en) * 2004-11-05 2011-10-17 엘지디스플레이 주식회사 apparatus for generating femtosecond laser and method for cutting of substrate using the same
JP4781661B2 (en) 2004-11-12 2011-09-28 浜松ホトニクス株式会社 Laser processing method
JP4917257B2 (en) 2004-11-12 2012-04-18 浜松ホトニクス株式会社 Laser processing method
JP4776911B2 (en) * 2004-11-19 2011-09-21 キヤノン株式会社 Laser processing apparatus and laser processing method
JP2006145810A (en) * 2004-11-19 2006-06-08 Canon Inc Automatic focusing apparatus, laser beam machining apparatus and laser beam cutter
US8093530B2 (en) 2004-11-19 2012-01-10 Canon Kabushiki Kaisha Laser cutting apparatus and laser cutting method
JP2006150385A (en) 2004-11-26 2006-06-15 Canon Inc Laser cutting method
TWI237322B (en) * 2004-12-14 2005-08-01 Cleavage Entpr Co Ltd Method and device by using a laser beam to cut Gallium arsenide (GaAs) epitaxy wafer
JP2006173428A (en) 2004-12-17 2006-06-29 Seiko Epson Corp Substrate machining method, and element manufacturing method
JP4873863B2 (en) * 2005-01-14 2012-02-08 日東電工株式会社 Manufacturing method of laser processed product and pressure-sensitive adhesive sheet for laser processing
JP4854061B2 (en) * 2005-01-14 2012-01-11 日東電工株式会社 Manufacturing method of laser processed product and protective sheet for laser processing
JP4471852B2 (en) * 2005-01-21 2010-06-02 パナソニック株式会社 Semiconductor wafer, manufacturing method using the same, and semiconductor device
JP4198123B2 (en) * 2005-03-22 2008-12-17 浜松ホトニクス株式会社 Laser processing method
JP2006286727A (en) * 2005-03-31 2006-10-19 Denso Corp Semiconductor wafer provided with plurality of semiconductor devices and its dicing method
JP2006315017A (en) * 2005-05-11 2006-11-24 Canon Inc Laser beam cutting method, and member to be cut
JP4809632B2 (en) * 2005-06-01 2011-11-09 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
JP4776994B2 (en) * 2005-07-04 2011-09-21 浜松ホトニクス株式会社 Processing object cutting method
JP4749799B2 (en) * 2005-08-12 2011-08-17 浜松ホトニクス株式会社 Laser processing method
KR100766727B1 (en) * 2005-08-19 2007-10-15 하마마츠 포토닉스 가부시키가이샤 Laser beam machining method
KR100813351B1 (en) * 2005-08-19 2008-03-12 하마마츠 포토닉스 가부시키가이샤 Laser beam machining method
US8221400B2 (en) * 2005-08-22 2012-07-17 Sie Surgical Instruments Engineering Ag Apparatus for and method of refractive surgery with laser pulses
DE102005039833A1 (en) 2005-08-22 2007-03-01 Rowiak Gmbh Device and method for material separation with laser pulses
US9138913B2 (en) * 2005-09-08 2015-09-22 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
DE102006042280A1 (en) * 2005-09-08 2007-06-06 IMRA America, Inc., Ann Arbor Transparent material scribing comprises using single scan of focused beam of ultrashort laser pulses to simultaneously create surface groove in material and modified region(s) within bulk of material
JP2007087973A (en) * 2005-09-16 2007-04-05 Rohm Co Ltd Manufacture of nitride semiconductor device, method for manufacturing nitride semiconductor device, and nitride semiconductor light-emitting device obtained by the same
JP4762653B2 (en) * 2005-09-16 2011-08-31 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
DE102005046479B4 (en) * 2005-09-28 2008-12-18 Infineon Technologies Austria Ag Process for splitting brittle materials using trenching technology
JP2007095952A (en) * 2005-09-28 2007-04-12 Tokyo Seimitsu Co Ltd Laser dicing equipment and laser dicing method
JP2007118207A (en) * 2005-10-25 2007-05-17 Seiko Epson Corp Processing method of laminate
WO2007055010A1 (en) 2005-11-10 2007-05-18 Renesas Technology Corp. Semiconductor device manufacturing method and semiconductor device
JP2013080972A (en) * 2005-11-10 2013-05-02 Renesas Electronics Corp Method of manufacturing semiconductor device
JP2007165850A (en) 2005-11-16 2007-06-28 Denso Corp Wafer, and dividing method thereof
JP4830740B2 (en) * 2005-11-16 2011-12-07 株式会社デンソー Manufacturing method of semiconductor chip
KR100858983B1 (en) * 2005-11-16 2008-09-17 가부시키가이샤 덴소 Semiconductor device and dicing method for semiconductor substrate
US20070111480A1 (en) * 2005-11-16 2007-05-17 Denso Corporation Wafer product and processing method therefor
US7662668B2 (en) * 2005-11-16 2010-02-16 Denso Corporation Method for separating a semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate
JP2007142001A (en) * 2005-11-16 2007-06-07 Denso Corp Laser beam machine and laser beam machining method
JP2007165851A (en) * 2005-11-16 2007-06-28 Denso Corp Dicing sheet frame
JP4678281B2 (en) * 2005-11-16 2011-04-27 株式会社デンソー Semiconductor substrate cutting device
US7838331B2 (en) * 2005-11-16 2010-11-23 Denso Corporation Method for dicing semiconductor substrate
JP4736738B2 (en) * 2005-11-17 2011-07-27 株式会社デンソー Laser dicing method and laser dicing apparatus
JP4237745B2 (en) * 2005-11-18 2009-03-11 浜松ホトニクス株式会社 Laser processing method
JP4907965B2 (en) * 2005-11-25 2012-04-04 浜松ホトニクス株式会社 Laser processing method
US20070155131A1 (en) * 2005-12-21 2007-07-05 Intel Corporation Method of singulating a microelectronic wafer
JP4804911B2 (en) * 2005-12-22 2011-11-02 浜松ホトニクス株式会社 Laser processing equipment
JP4907984B2 (en) 2005-12-27 2012-04-04 浜松ホトニクス株式会社 Laser processing method and semiconductor chip
JP4711185B2 (en) 2006-02-27 2011-06-29 株式会社デンソー Foreign matter removing apparatus and foreign matter removing method for semiconductor device
JP2007235069A (en) 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd Wafer machining method
JP2007235008A (en) * 2006-03-03 2007-09-13 Denso Corp Dividing method for wafer, and chip
JP2007235068A (en) 2006-03-03 2007-09-13 Tokyo Seimitsu Co Ltd Wafer machining method
JP4322881B2 (en) * 2006-03-14 2009-09-02 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
JP2007275962A (en) * 2006-04-10 2007-10-25 Disco Abrasive Syst Ltd Laser beam machining apparatus
JP2007305687A (en) * 2006-05-09 2007-11-22 Disco Abrasive Syst Ltd Dicing method and dicing device of wafer
JP2007317747A (en) * 2006-05-23 2007-12-06 Seiko Epson Corp Substrate dividing method and method of manufacturing liquid injection head
US20070298529A1 (en) * 2006-05-31 2007-12-27 Toyoda Gosei, Co., Ltd. Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
JP4480728B2 (en) * 2006-06-09 2010-06-16 パナソニック株式会社 Method for manufacturing MEMS microphone
JP5183892B2 (en) 2006-07-03 2013-04-17 浜松ホトニクス株式会社 Laser processing method
EP1875983B1 (en) * 2006-07-03 2013-09-11 Hamamatsu Photonics K.K. Laser processing method and chip
JP5048978B2 (en) 2006-07-14 2012-10-17 株式会社ディスコ Laser processing equipment
JP2008028347A (en) * 2006-07-25 2008-02-07 Disco Abrasive Syst Ltd Method of forming embrittled regions
JP5145673B2 (en) * 2006-08-30 2013-02-20 住友電気工業株式会社 Laser processing method and laser processing apparatus
JP4954653B2 (en) * 2006-09-19 2012-06-20 浜松ホトニクス株式会社 Laser processing method
US8188404B2 (en) * 2006-09-19 2012-05-29 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
JP5101073B2 (en) * 2006-10-02 2012-12-19 浜松ホトニクス株式会社 Laser processing equipment
JP5037082B2 (en) * 2006-10-02 2012-09-26 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
JP4964554B2 (en) * 2006-10-03 2012-07-04 浜松ホトニクス株式会社 Laser processing method
JP5132911B2 (en) * 2006-10-03 2013-01-30 浜松ホトニクス株式会社 Laser processing method
EP2070636B1 (en) * 2006-10-04 2015-08-05 Hamamatsu Photonics K.K. Laser processing method
DE102006051556A1 (en) * 2006-11-02 2008-05-08 Manz Automation Ag Process for structuring solar modules and structuring device
JP5029804B2 (en) * 2006-11-02 2012-09-19 澁谷工業株式会社 Cleaving method for brittle materials
EP2084550A1 (en) * 2006-11-08 2009-08-05 T2 Biosystems, Inc. Nmr systems for in vivo detection of analytes
JP4306717B2 (en) * 2006-11-09 2009-08-05 セイコーエプソン株式会社 Method for manufacturing silicon device and method for manufacturing liquid jet head
US20080142475A1 (en) * 2006-12-15 2008-06-19 Knowles Electronics, Llc Method of creating solid object from a material and apparatus thereof
KR101413499B1 (en) * 2007-01-05 2014-07-01 니폰 덴키 가라스 가부시키가이샤 Cover glass for solid state imaging device and method for manufacturing the cover glass
US8530784B2 (en) * 2007-02-01 2013-09-10 Orbotech Ltd. Method and system of machining using a beam of photons
JP2008277414A (en) * 2007-04-26 2008-11-13 Disco Abrasive Syst Ltd Dividing method of wafer
JP5162163B2 (en) * 2007-06-27 2013-03-13 株式会社ディスコ Wafer laser processing method
JP5336054B2 (en) * 2007-07-18 2013-11-06 浜松ホトニクス株式会社 Processing information supply system provided with processing information supply device
JP2009032970A (en) * 2007-07-27 2009-02-12 Rohm Co Ltd Method of manufacturing nitride semiconductor element
JP4402708B2 (en) * 2007-08-03 2010-01-20 浜松ホトニクス株式会社 Laser processing method, laser processing apparatus and manufacturing method thereof
US20090040640A1 (en) * 2007-08-07 2009-02-12 Jinnam Kim Glass cutting method, glass for flat panel display thereof and flat panel display device using it
JP2009044600A (en) * 2007-08-10 2009-02-26 Panasonic Corp Microphone device and manufacturing method thereof
JP5225639B2 (en) * 2007-09-06 2013-07-03 浜松ホトニクス株式会社 Manufacturing method of semiconductor laser device
JP5342772B2 (en) * 2007-10-12 2013-11-13 浜松ホトニクス株式会社 Processing object cutting method
JP5449665B2 (en) * 2007-10-30 2014-03-19 浜松ホトニクス株式会社 Laser processing method
JP5134928B2 (en) * 2007-11-30 2013-01-30 浜松ホトニクス株式会社 Workpiece grinding method
JP5054496B2 (en) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 Processing object cutting method
KR20100105673A (en) 2007-12-14 2010-09-29 이 아이 듀폰 디 네모아 앤드 캄파니 Backplane structures for electronic devices
WO2009081746A1 (en) 2007-12-21 2009-07-02 Tokyo Seimitsu Co., Ltd. Dicing apparatus and dicing method
CN105583526B (en) 2008-03-21 2018-08-17 Imra美国公司 Material processing method based on laser and system
US8204618B2 (en) * 2008-03-24 2012-06-19 Hypertherm, Inc. Method and apparatus for operating an automated high temperature thermal cutting system
US20090242526A1 (en) * 2008-03-26 2009-10-01 Electro Scientific Industries, Inc. Laser micromachining through a protective member
JP5345334B2 (en) * 2008-04-08 2013-11-20 株式会社レミ Thermal stress cleaving method for brittle materials
US8900715B2 (en) * 2008-06-11 2014-12-02 Infineon Technologies Ag Semiconductor device
JP5108661B2 (en) * 2008-07-03 2012-12-26 浜松ホトニクス株式会社 Laser processing apparatus and laser processing method
JP2010029930A (en) * 2008-07-31 2010-02-12 Disco Abrasive Syst Ltd Laser beam machining apparatus and laser beam machining method
JP5243139B2 (en) * 2008-07-31 2013-07-24 株式会社ディスコ Laser processing apparatus and laser processing method
JP2010029927A (en) * 2008-07-31 2010-02-12 Disco Abrasive Syst Ltd Laser beam machining apparatus and laser beam machining method
JP5117954B2 (en) * 2008-07-31 2013-01-16 株式会社ディスコ Laser processing apparatus and laser processing method
JP5692969B2 (en) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 Aberration correction method, laser processing method using this aberration correction method, laser irradiation method using this aberration correction method, aberration correction apparatus, and aberration correction program
EP2328712B1 (en) * 2008-09-17 2017-02-22 TRUMPF Laser GmbH Laser cutting method without cutting gas
DE102008052006B4 (en) 2008-10-10 2018-12-20 3D-Micromac Ag Method and device for the production of samples for transmission electron microscopy
US8895892B2 (en) * 2008-10-23 2014-11-25 Corning Incorporated Non-contact glass shearing device and method for scribing or cutting a moving glass sheet
KR100918432B1 (en) * 2008-10-23 2009-09-24 홍동희 Cuttable ampoule and forming method of cutting groove
CN102203943B (en) * 2008-10-29 2013-07-31 欧瑞康太阳能股份公司(特吕巴赫) Method for dividing a semiconductor film formed on a substrate into plural regions by multiple laser beam irradiation
JP5127669B2 (en) * 2008-10-31 2013-01-23 パナソニック株式会社 Semiconductor wafer
KR101539246B1 (en) 2008-11-10 2015-07-24 삼성전자 주식회사 Fabricating method of the light emitting device for improving light extraction efficiency and light emitting device fabricated by the method
JP5254761B2 (en) 2008-11-28 2013-08-07 浜松ホトニクス株式会社 Laser processing equipment
US9346130B2 (en) 2008-12-17 2016-05-24 Electro Scientific Industries, Inc. Method for laser processing glass with a chamfered edge
JP5241527B2 (en) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 Laser processing equipment
JP5241525B2 (en) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 Laser processing equipment
DE102009005303A1 (en) * 2009-01-16 2010-07-22 BIAS - Bremer Institut für angewandte Strahltechnik GmbH A method for separating a semiconductor wafer from a semiconductor crystal
JP2010177277A (en) * 2009-01-27 2010-08-12 Tokyo Seimitsu Co Ltd Laser dicing method and laser dicing device
WO2010090111A1 (en) 2009-02-09 2010-08-12 浜松ホトニクス株式会社 Workpiece cutting method
US8341976B2 (en) 2009-02-19 2013-01-01 Corning Incorporated Method of separating strengthened glass
US8327666B2 (en) 2009-02-19 2012-12-11 Corning Incorporated Method of separating strengthened glass
US8347651B2 (en) * 2009-02-19 2013-01-08 Corning Incorporated Method of separating strengthened glass
US8245540B2 (en) * 2009-02-24 2012-08-21 Corning Incorporated Method for scoring a sheet of brittle material
CN102326232B (en) 2009-02-25 2016-01-20 日亚化学工业株式会社 The manufacture method of semiconductor element
US20100252959A1 (en) * 2009-03-27 2010-10-07 Electro Scientific Industries, Inc. Method for improved brittle materials processing
US8609512B2 (en) * 2009-03-27 2013-12-17 Electro Scientific Industries, Inc. Method for laser singulation of chip scale packages on glass substrates
JP5639997B2 (en) * 2009-04-07 2014-12-10 浜松ホトニクス株式会社 Laser processing equipment
JP5491761B2 (en) 2009-04-20 2014-05-14 浜松ホトニクス株式会社 Laser processing equipment
US8455332B2 (en) * 2009-05-01 2013-06-04 Bridgelux, Inc. Method and apparatus for manufacturing LED devices using laser scribing
US8269138B2 (en) * 2009-05-21 2012-09-18 Corning Incorporated Method for separating a sheet of brittle material
JP5340808B2 (en) * 2009-05-21 2013-11-13 株式会社ディスコ Laser processing method of semiconductor wafer
US8706288B2 (en) * 2009-05-21 2014-04-22 Electro Scientific Industries, Inc. Apparatus and method for non-contact sensing of transparent articles
US8133763B2 (en) * 2009-05-22 2012-03-13 Texas Instruments Incorporated Method for semiconductor leadframes in low volume and rapid turnaround
JP5525601B2 (en) 2009-06-04 2014-06-18 コアレイズ オーワイ Substrate processing method using laser
US8216867B2 (en) 2009-06-10 2012-07-10 Cree, Inc. Front end scribing of light emitting diode (LED) wafers and resulting devices
TW201103681A (en) * 2009-06-12 2011-02-01 Applied Materials Inc Methods and systems for laser-scribed line alignment
JP5609870B2 (en) * 2009-07-03 2014-10-22 旭硝子株式会社 Cleaving method and cleaving apparatus for brittle material substrate, and vehicle window glass obtained by the cleaving method
JP5537081B2 (en) 2009-07-28 2014-07-02 浜松ホトニクス株式会社 Processing object cutting method
JP5476063B2 (en) * 2009-07-28 2014-04-23 浜松ホトニクス株式会社 Processing object cutting method
JP4915440B2 (en) * 2009-08-07 2012-04-11 株式会社デンソー Manufacturing method of semiconductor device
WO2011018989A1 (en) * 2009-08-11 2011-02-17 浜松ホトニクス株式会社 Laser machining device and laser machining method
JP5379604B2 (en) 2009-08-21 2013-12-25 浜松ホトニクス株式会社 Laser processing method and chip
US8932510B2 (en) 2009-08-28 2015-01-13 Corning Incorporated Methods for laser cutting glass substrates
US8943855B2 (en) 2009-08-28 2015-02-03 Corning Incorporated Methods for laser cutting articles from ion exchanged glass substrates
JP2011060848A (en) * 2009-09-07 2011-03-24 Nitto Denko Corp Thermosetting type die bond film, dicing-die bond film and semiconductor device
JP5446631B2 (en) * 2009-09-10 2014-03-19 アイシン精機株式会社 Laser processing method and laser processing apparatus
US20110058770A1 (en) * 2009-09-10 2011-03-10 E. I. Du Pont De Nemours And Company Sub-surface engraving of oled substrates for improved optical outcoupling
JP2011077429A (en) * 2009-10-01 2011-04-14 Disco Abrasive Syst Ltd Workpiece dividing method
KR101124509B1 (en) 2009-10-13 2012-03-16 주식회사 엘티에스 Laser processing apparatus
JP5620669B2 (en) * 2009-10-26 2014-11-05 東芝機械株式会社 Laser dicing method and laser dicing apparatus
JP5414467B2 (en) * 2009-11-09 2014-02-12 キヤノン株式会社 Laser processing method
US8946590B2 (en) * 2009-11-30 2015-02-03 Corning Incorporated Methods for laser scribing and separating glass substrates
US20110127242A1 (en) * 2009-11-30 2011-06-02 Xinghua Li Methods for laser scribing and separating glass substrates
TW201143947A (en) * 2009-12-07 2011-12-16 J P Sercel Associates Inc Laser machining and scribing systems and methods
US20130256286A1 (en) * 2009-12-07 2013-10-03 Ipg Microsystems Llc Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths
JP5547212B2 (en) 2009-12-11 2014-07-09 シャープ株式会社 Manufacturing method of semiconductor device
JP5056839B2 (en) * 2009-12-25 2012-10-24 三星ダイヤモンド工業株式会社 Workpiece processing method and workpiece division method
JP5452247B2 (en) * 2010-01-21 2014-03-26 東芝機械株式会社 Laser dicing equipment
JP5479924B2 (en) * 2010-01-27 2014-04-23 浜松ホトニクス株式会社 Laser processing method
JP2011165766A (en) * 2010-02-05 2011-08-25 Disco Abrasive Syst Ltd Method of processing optical device wafer
DE102010009015A1 (en) * 2010-02-24 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Method for producing a plurality of optoelectronic semiconductor chips
JP2011201759A (en) * 2010-03-05 2011-10-13 Disco Corp Single crystal substrate with multilayer film, production method for single crystal substrate with multilayer film, and device production method
CN102834216B (en) * 2010-03-16 2015-01-21 爱信精机株式会社 Pulse laser device, transparent member welding method, and transparent member welding device
US8519298B2 (en) * 2010-03-25 2013-08-27 Veeco Instruments, Inc. Split laser scribe
KR101230616B1 (en) * 2010-03-26 2013-02-06 디앤에이 주식회사 Laser processing apparatus and laser processing method
JP2011200926A (en) * 2010-03-26 2011-10-13 Mitsuboshi Diamond Industrial Co Ltd Laser beam machining method and brittle material substrate
CN102905839B (en) 2010-03-30 2016-03-09 Imra美国公司 Based on the materials processing apparatus and method of laser
US8383984B2 (en) 2010-04-02 2013-02-26 Electro Scientific Industries, Inc. Method and apparatus for laser singulation of brittle materials
US20110240644A1 (en) * 2010-04-05 2011-10-06 Steven Donald Kimmell Thermoplastic containers with easy access defined by laser-induced rupturable areas
KR100984727B1 (en) * 2010-04-30 2010-10-01 (주)큐엠씨 Method and apparatus for processing workpiece
US8950217B2 (en) 2010-05-14 2015-02-10 Hamamatsu Photonics K.K. Method of cutting object to be processed, method of cutting strengthened glass sheet and method of manufacturing strengthened glass member
JP5670647B2 (en) 2010-05-14 2015-02-18 浜松ホトニクス株式会社 Processing object cutting method
DE102010029791A1 (en) 2010-06-08 2011-12-08 Trumpf Werkzeugmaschinen Gmbh + Co. Kg Method for laser material processing of a workpiece
CN102510788B (en) * 2010-06-14 2014-12-24 三菱电机株式会社 Laser processing device and laser processing method
KR101247571B1 (en) * 2010-06-14 2013-03-26 미쓰보시 다이야몬도 고교 가부시키가이샤 Method for scribing brittle material substrate
US8877612B2 (en) 2010-06-16 2014-11-04 Toyoda Gosei Co., Ltd. Laser processing method
JP5981094B2 (en) 2010-06-24 2016-08-31 東芝機械株式会社 Dicing method
JP5104911B2 (en) * 2010-06-28 2012-12-19 三星ダイヤモンド工業株式会社 Workpiece processing method, workpiece dividing method, and laser processing apparatus
TWI446984B (en) * 2010-06-28 2014-08-01 Mitsuboshi Diamond Ind Co Ltd Processing method for a workpiece, dividing method for a workpiece, and laser processing apparatus
JP5104912B2 (en) * 2010-06-28 2012-12-19 三星ダイヤモンド工業株式会社 Laser processing equipment
JP5104910B2 (en) * 2010-06-28 2012-12-19 三星ダイヤモンド工業株式会社 Workpiece processing method and workpiece division method
JP5391158B2 (en) * 2010-06-30 2014-01-15 古河電気工業株式会社 Wafer sticking adhesive sheet and wafer processing method using the same
RU2013102422A (en) 2010-07-12 2014-08-20 ФАЙЛЭЙСЕР ЮЭс-Эй ЭлЭлСи Method of processing materials using filamentation
JP5597051B2 (en) * 2010-07-21 2014-10-01 浜松ホトニクス株式会社 Laser processing method
DE102010032029B4 (en) * 2010-07-21 2012-09-13 Jenoptik Automatisierungstechnik Gmbh Method for separating a round flat plate made of brittle material into several rectangular individual plates by means of laser
JP5104919B2 (en) * 2010-07-23 2012-12-19 三星ダイヤモンド工業株式会社 Laser processing apparatus, workpiece processing method, and workpiece dividing method
JP5104920B2 (en) * 2010-07-23 2012-12-19 三星ダイヤモンド工業株式会社 Laser processing apparatus, workpiece processing method, and workpiece dividing method
WO2012014710A1 (en) 2010-07-26 2012-02-02 浜松ホトニクス株式会社 Laser processing method
JP5530522B2 (en) 2010-07-26 2014-06-25 浜松ホトニクス株式会社 Manufacturing method of semiconductor device
KR101940332B1 (en) * 2010-07-26 2019-01-18 하마마츠 포토닉스 가부시키가이샤 Substrate processing method
JP5693074B2 (en) * 2010-07-26 2015-04-01 浜松ホトニクス株式会社 Laser processing method
WO2012014723A1 (en) 2010-07-26 2012-02-02 浜松ホトニクス株式会社 Method for manufacturing light-absorbing substrate and method for manufacturing die for manufacturing light-absorbing substrate
EP2599580A4 (en) 2010-07-26 2016-12-28 Hamamatsu Photonics Kk Laser processing method
US8741777B2 (en) 2010-07-26 2014-06-03 Hamamatsu Photonics K.K. Substrate processing method
JP5574866B2 (en) 2010-07-26 2014-08-20 浜松ホトニクス株式会社 Laser processing method
JP5702556B2 (en) 2010-07-26 2015-04-15 浜松ホトニクス株式会社 Laser processing method
JP5653110B2 (en) 2010-07-26 2015-01-14 浜松ホトニクス株式会社 Chip manufacturing method
CN103025474B (en) 2010-07-26 2015-04-01 浜松光子学株式会社 Laser processing method
JP5509332B2 (en) 2010-07-26 2014-06-04 浜松ホトニクス株式会社 Manufacturing method of interposer
KR101146642B1 (en) 2010-08-04 2012-05-16 (주)큐엠씨 Apparatus for Breaking Processed Object Using Curved Surface Close-adhesion
KR101217698B1 (en) * 2010-08-16 2013-01-02 주식회사 이오테크닉스 Laser processing method and laser processing apparatus using sequential multi-focusing
KR101211104B1 (en) * 2010-08-18 2012-12-18 유병소 Laser processing method and laser processing device
TWI513670B (en) 2010-08-31 2015-12-21 Corning Inc Methods of separating strengthened glass substrates
CN101976796B (en) * 2010-09-06 2011-11-16 中国科学院上海光学精密机械研究所 Method for inhibiting amplified spontaneous emission of large-size sheet laser neodymium glass
GB201016046D0 (en) * 2010-09-24 2010-11-10 Renishaw Plc A method of forming an optical device
US8722516B2 (en) 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
JP2012079936A (en) 2010-10-01 2012-04-19 Nitto Denko Corp Dicing, die-bonding film and method for manufacturing semiconductor device
JP4911239B2 (en) * 2010-10-15 2012-04-04 セイコーエプソン株式会社 Multilayer structure substrate, droplet discharge head substrate, and method for manufacturing multilayer structure
JP5240272B2 (en) * 2010-10-15 2013-07-17 三星ダイヤモンド工業株式会社 Laser processing apparatus, workpiece processing method, and workpiece dividing method
JP2012089709A (en) * 2010-10-20 2012-05-10 Disco Abrasive Syst Ltd Method for dividing workpiece
US8399808B2 (en) * 2010-10-22 2013-03-19 Ultratech, Inc. Systems and methods for forming a time-averaged line image
CN102456625A (en) * 2010-10-26 2012-05-16 苏州天弘激光股份有限公司 Method for manufacturing special-shaped chip through laser cutting
US8703517B2 (en) 2010-10-29 2014-04-22 Denso Corporation Method of Manufacturing a Semiconductor Device Including Removing a Reformed Layer
JP4976576B2 (en) * 2010-11-01 2012-07-18 住友電工ハードメタル株式会社 Cutting tool, manufacturing method thereof and manufacturing apparatus
JP2012096274A (en) * 2010-11-04 2012-05-24 Disco Corp Laser processing apparatus
WO2012063342A1 (en) * 2010-11-10 2012-05-18 トヨタ自動車株式会社 Method of manufacturing semiconductor device
WO2012063348A1 (en) * 2010-11-11 2012-05-18 パイオニア株式会社 Laser processing method and device
RU2459691C2 (en) * 2010-11-29 2012-08-27 Юрий Георгиевич Шретер Method of separating surface layer of semiconductor chip (versions)
US20120132629A1 (en) * 2010-11-30 2012-05-31 Electro Scientific Industries, Inc. Method and apparatus for reducing taper of laser scribes
JP5480169B2 (en) 2011-01-13 2014-04-23 浜松ホトニクス株式会社 Laser processing method
JP5548143B2 (en) * 2011-01-25 2014-07-16 三星ダイヤモンド工業株式会社 LED chip manufacturing method
TWI457191B (en) * 2011-02-04 2014-10-21 Mitsuboshi Diamond Ind Co Ltd Laser scribing method and laser processing apparatus
WO2012108316A1 (en) * 2011-02-08 2012-08-16 株式会社フジクラ Method for manufacturing substrate having micropore, and substrate
US8584490B2 (en) 2011-02-18 2013-11-19 Corning Incorporated Laser cutting method
US8735772B2 (en) 2011-02-20 2014-05-27 Electro Scientific Industries, Inc. Method and apparatus for improved laser scribing of opto-electric devices
JP5860217B2 (en) * 2011-03-04 2016-02-16 株式会社ディスコ Laser processing equipment
JP5860219B2 (en) * 2011-03-10 2016-02-16 株式会社ディスコ Laser processing equipment
JP5860221B2 (en) * 2011-03-17 2016-02-16 株式会社ディスコ Laser processing method for nonlinear crystal substrate
US8538576B2 (en) * 2011-04-05 2013-09-17 Asm Technology Singapore Pte. Ltd. Method of configuring a dicing device, and a dicing apparatus for dicing a workpiece
JP5589942B2 (en) 2011-04-15 2014-09-17 豊田合成株式会社 Manufacturing method of semiconductor light emitting chip
CN102765876A (en) * 2011-05-05 2012-11-07 上海镭立激光科技有限公司 Glass cutting method by laser self-focusing and wire feeding
JP2012238746A (en) 2011-05-12 2012-12-06 Disco Abrasive Syst Ltd Division method of optical device wafer
JP5912287B2 (en) * 2011-05-19 2016-04-27 株式会社ディスコ Laser processing method and laser processing apparatus
US9034458B2 (en) 2011-05-27 2015-05-19 Corning Incorporated Edge-protected product and finishing method
JP5840875B2 (en) * 2011-06-21 2016-01-06 株式会社ディスコ Processing method of optical device wafer
US9095414B2 (en) * 2011-06-24 2015-08-04 The Regents Of The University Of California Nonlinear optical photodynamic therapy (NLO-PDT) of the cornea
RU2469433C1 (en) * 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Method for laser separation of epitaxial film or layer of epitaxial film from growth substrate of epitaxial semiconductor structure (versions)
JP5140198B1 (en) 2011-07-27 2013-02-06 東芝機械株式会社 Laser dicing method
JP2013046924A (en) 2011-07-27 2013-03-07 Toshiba Mach Co Ltd Laser dicing method
JP2013027887A (en) 2011-07-27 2013-02-07 Toshiba Mach Co Ltd Laser dicing method
JP5939752B2 (en) * 2011-09-01 2016-06-22 株式会社ディスコ Wafer dividing method
JP2013055160A (en) * 2011-09-01 2013-03-21 Canon Inc Light transmissive member, optical device, and manufacturing method of them
JP5894754B2 (en) * 2011-09-16 2016-03-30 浜松ホトニクス株式会社 Laser processing method
JP2013063454A (en) * 2011-09-16 2013-04-11 Hamamatsu Photonics Kk Laser machining method and laser machining device
US10239160B2 (en) * 2011-09-21 2019-03-26 Coherent, Inc. Systems and processes that singulate materials
JP2013144312A (en) * 2011-10-07 2013-07-25 Canon Inc Method and apparatus for laser-beam processing and method for manufacturing inkjet head
JP5923765B2 (en) * 2011-10-07 2016-05-25 株式会社ブイ・テクノロジー Laser processing equipment for glass substrates
US20130095581A1 (en) * 2011-10-18 2013-04-18 Taiwan Semiconductor Manufacturing Company, Ltd. Thick window layer led manufacture
WO2013065450A1 (en) * 2011-11-04 2013-05-10 株式会社フジクラ Method of manufacturing substrate provided with micropores
US10105918B2 (en) * 2011-11-10 2018-10-23 Conavi Medical Inc. Internal optical elements produced by irradiation-induced refractive index changes
US8697463B2 (en) * 2012-01-26 2014-04-15 Epistar Corporation Manufacturing method of a light-emitting device
US9828278B2 (en) 2012-02-28 2017-11-28 Electro Scientific Industries, Inc. Method and apparatus for separation of strengthened glass and articles produced thereby
CN104136967B (en) 2012-02-28 2018-02-16 伊雷克托科学工业股份有限公司 For the article for separating the method and device of reinforcing glass and being produced by the reinforcing glass
KR20140129055A (en) * 2012-02-28 2014-11-06 일렉트로 싸이언티픽 인더스트리이즈 인코포레이티드 Method and apparatus for separation of strengthened glass and articles produced thereby
CN104114506B (en) 2012-02-29 2017-05-24 伊雷克托科学工业股份有限公司 Methods and apparatus for machining strengthened glass and articles produced thereby
JP6011002B2 (en) * 2012-04-23 2016-10-19 セイコーエプソン株式会社 Manufacturing method of liquid ejecting head and manufacturing method of liquid ejecting apparatus
JP5982172B2 (en) * 2012-05-15 2016-08-31 株式会社ディスコ Wafer laser processing method
JP6009225B2 (en) * 2012-05-29 2016-10-19 浜松ホトニクス株式会社 Cutting method of tempered glass sheet
KR20130134703A (en) * 2012-05-31 2013-12-10 참엔지니어링(주) Laser processing system and method
US9938180B2 (en) * 2012-06-05 2018-04-10 Corning Incorporated Methods of cutting glass using a laser
JP5646549B2 (en) * 2012-06-15 2014-12-24 三星ダイヤモンド工業株式会社 Laser processing equipment
JP5360267B2 (en) * 2012-06-15 2013-12-04 三星ダイヤモンド工業株式会社 Workpiece processing method and workpiece division method
JP5646550B2 (en) * 2012-06-15 2014-12-24 三星ダイヤモンド工業株式会社 Workpiece processing method, workpiece dividing method, and laser processing apparatus
JP5360266B2 (en) * 2012-06-15 2013-12-04 三星ダイヤモンド工業株式会社 Laser processing apparatus, workpiece processing method, and workpiece dividing method
US20130344684A1 (en) * 2012-06-20 2013-12-26 Stuart Bowden Methods and systems for using subsurface laser engraving (ssle) to create one or more wafers from a material
CN102749746B (en) * 2012-06-21 2015-02-18 深圳市华星光电技术有限公司 Liquid crystal substrate cutting device and liquid crystal substrate cutting method
JP5918044B2 (en) * 2012-06-25 2016-05-18 株式会社ディスコ Processing method and processing apparatus
JP2014011358A (en) 2012-06-29 2014-01-20 Toshiba Mach Co Ltd Laser dicing method
JP5421475B2 (en) 2012-07-04 2014-02-19 誠 雫石 Imaging device, semiconductor integrated circuit, and imaging apparatus
US8709916B2 (en) * 2012-07-05 2014-04-29 Asm Technology Singapore Pte Ltd Laser processing method and apparatus
TW201417928A (en) * 2012-07-30 2014-05-16 Raydiance Inc Cutting of brittle materials with tailored edge shape and roughness
WO2014022681A1 (en) 2012-08-01 2014-02-06 Gentex Corporation Assembly with laser induced channel edge and method thereof
KR101358672B1 (en) * 2012-08-13 2014-02-11 한국과학기술원 Transparent material cutting method using ultrafast pulse laser and dicing apparatus for thereof
JP6068882B2 (en) * 2012-09-05 2017-01-25 株式会社ディスコ Laser processing equipment
JP2014053510A (en) * 2012-09-07 2014-03-20 Toshiba Corp End face processing method and end face processing device
US9610653B2 (en) 2012-09-21 2017-04-04 Electro Scientific Industries, Inc. Method and apparatus for separation of workpieces and articles produced thereby
US10357850B2 (en) * 2012-09-24 2019-07-23 Electro Scientific Industries, Inc. Method and apparatus for machining a workpiece
JP6013858B2 (en) * 2012-10-01 2016-10-25 株式会社ディスコ Wafer processing method
JP6003496B2 (en) * 2012-10-02 2016-10-05 三星ダイヤモンド工業株式会社 Patterned substrate processing method
JP6124547B2 (en) * 2012-10-16 2017-05-10 株式会社ディスコ Processing method
JP6127526B2 (en) * 2012-10-29 2017-05-17 三星ダイヤモンド工業株式会社 Laser processing apparatus and processing condition setting method for patterned substrate
WO2014079478A1 (en) 2012-11-20 2014-05-30 Light In Light Srl High speed laser processing of transparent materials
US9701564B2 (en) 2013-01-15 2017-07-11 Corning Incorporated Systems and methods of glass cutting by inducing pulsed laser perforations into glass articles
EP2754524B1 (en) 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Method of and apparatus for laser based processing of flat substrates being wafer or glass element using a laser beam line
JP6208430B2 (en) * 2013-01-25 2017-10-04 株式会社ディスコ Laser processing method
TWI598174B (en) * 2013-01-25 2017-09-11 鴻海精密工業股份有限公司 Sapphire dicing device
JP6137202B2 (en) * 2013-02-04 2017-05-31 旭硝子株式会社 Glass substrate cutting method, glass substrate, near infrared cut filter glass, glass substrate manufacturing method
CN105531074B (en) * 2013-02-04 2019-09-03 纽波特公司 For being cut by laser transparent and translucent base method and apparatus
JP6062287B2 (en) * 2013-03-01 2017-01-18 株式会社ディスコ Wafer processing method
JP6113529B2 (en) 2013-03-05 2017-04-12 株式会社ディスコ Wafer processing method
US9878399B2 (en) * 2013-03-15 2018-01-30 Jian Liu Method and apparatus for welding dissimilar material with a high energy high power ultrafast laser
EP2781296A1 (en) * 2013-03-21 2014-09-24 Corning Laser Technologies GmbH Device and method for cutting out contours from flat substrates using a laser
JP6189066B2 (en) * 2013-03-27 2017-08-30 株式会社ディスコ Wafer processing method
JP6162827B2 (en) * 2013-04-04 2017-07-12 エル・ピー・ケー・エフ・レーザー・ウント・エレクトロニクス・アクチエンゲゼルシヤフト Method and apparatus for separating substrates
JP6054234B2 (en) * 2013-04-22 2016-12-27 株式会社ディスコ Wafer processing method
DE102013207480A1 (en) 2013-04-24 2014-10-30 Smartrac Technology Gmbh Method of separating a wafer into chips
JP6062315B2 (en) * 2013-04-24 2017-01-18 株式会社ディスコ Wafer processing method
KR102065370B1 (en) * 2013-05-03 2020-02-12 삼성디스플레이 주식회사 Method of peeling substrate and substrate peeling device
FR3006068B1 (en) * 2013-05-24 2015-04-24 Saint Gobain Process for obtaining a substrate
JP6101569B2 (en) * 2013-05-31 2017-03-22 株式会社ディスコ Laser processing equipment
KR101996244B1 (en) 2013-06-27 2019-07-05 삼성전자 주식회사 Method for fabricating semiconductor device
DE102013212577A1 (en) * 2013-06-28 2014-12-31 Trumpf Laser- Und Systemtechnik Gmbh Method for cutting off a workpiece by means of a pulsed laser beam
WO2015010706A1 (en) * 2013-07-23 2015-01-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for separating a flat workpiece into multiple parts
CN103466930A (en) * 2013-07-25 2013-12-25 武汉帝尔激光科技有限公司 Cutting system and cutting method for glass panel
JP6121281B2 (en) * 2013-08-06 2017-04-26 株式会社ディスコ Wafer processing method
WO2015046088A1 (en) 2013-09-25 2015-04-02 旭硝子株式会社 Optical glass
DE102013016693A1 (en) * 2013-10-08 2015-04-09 Siltectra Gmbh Production method for solid state elements by means of laser treatment and temperature-induced stresses
DE102014013107A1 (en) 2013-10-08 2015-04-09 Siltectra Gmbh Novel wafer manufacturing process
JP6246561B2 (en) * 2013-11-01 2017-12-13 株式会社ディスコ Laser processing method and laser processing apparatus
CN103739192B (en) * 2013-11-14 2016-02-17 上海和辉光电有限公司 Cutting unit and cutting method
JP6032182B2 (en) * 2013-11-18 2016-11-24 トヨタ自動車株式会社 Laser processing method and laser processing apparatus
DE102013223637B4 (en) * 2013-11-20 2018-02-01 Trumpf Laser- Und Systemtechnik Gmbh A method of treating a laser transparent substrate for subsequently separating the substrate
JP5607847B1 (en) 2013-11-29 2014-10-15 古河電気工業株式会社 Adhesive tape for semiconductor processing
US10144088B2 (en) 2013-12-03 2018-12-04 Rofin-Sinar Technologies Llc Method and apparatus for laser processing of silicon by filamentation of burst ultrafast laser pulses
ITAN20130232A1 (en) * 2013-12-05 2015-06-06 Munoz David Callejo A method for obtaining a plurality 'of laminae from an ingot of material with monocrystalline structure
JP6223801B2 (en) * 2013-12-05 2017-11-01 株式会社ディスコ Optical device wafer processing method
JP6223804B2 (en) * 2013-12-09 2017-11-01 株式会社ディスコ Wafer processing equipment
US10442719B2 (en) 2013-12-17 2019-10-15 Corning Incorporated Edge chamfering methods
US9676167B2 (en) 2013-12-17 2017-06-13 Corning Incorporated Laser processing of sapphire substrate and related applications
US9815730B2 (en) 2013-12-17 2017-11-14 Corning Incorporated Processing 3D shaped transparent brittle substrate
US9517963B2 (en) 2013-12-17 2016-12-13 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
US9850160B2 (en) 2013-12-17 2017-12-26 Corning Incorporated Laser cutting of display glass compositions
US9687936B2 (en) 2013-12-17 2017-06-27 Corning Incorporated Transparent material cutting with ultrafast laser and beam optics
US9701563B2 (en) 2013-12-17 2017-07-11 Corning Incorporated Laser cut composite glass article and method of cutting
US20150165560A1 (en) 2013-12-17 2015-06-18 Corning Incorporated Laser processing of slots and holes
US10471546B1 (en) * 2013-12-20 2019-11-12 Gentex Corporation Distribution of damage volumes in laser-induced channels
US10106880B2 (en) 2013-12-31 2018-10-23 The United States Of America, As Represented By The Secretary Of The Navy Modifying the surface chemistry of a material
US10189117B2 (en) 2013-12-31 2019-01-29 The United States Of America, As Represented By The Secretary Of The Navy Adhesion improvement via material nanostructuring or texturizing
WO2015119459A1 (en) 2014-02-07 2015-08-13 한국기계연구원 Device and method for forming counterfeiting preventing pattern, and device and method for detecting counterfeiting preventing pattern
KR20160137533A (en) 2014-03-24 2016-11-30 린텍 가부시키가이샤 Protection membrane forming film, protection membrane forming utilization sheet, production method and inspection method for workpiece or processed product, workpiece determined as adequate product, and processed product determined as adequate product
US9776906B2 (en) 2014-03-28 2017-10-03 Electro Scientific Industries, Inc. Laser machining strengthened glass
US9719776B2 (en) 2014-04-01 2017-08-01 TeraDiode, Inc. Feature and depth measurement using multiple beam sources and interferometry
US10585399B2 (en) * 2014-04-04 2020-03-10 Rolex Sa Method for producing a timepiece component provided with an insert made of a composite material, and associated timepiece component and timepiece
JP5897232B1 (en) * 2014-04-14 2016-03-30 三菱電機株式会社 Control device and laser processing device
US9636783B2 (en) 2014-04-30 2017-05-02 International Business Machines Corporation Method and apparatus for laser dicing of wafers
JP6301203B2 (en) * 2014-06-02 2018-03-28 株式会社ディスコ Chip manufacturing method
US9165832B1 (en) 2014-06-30 2015-10-20 Applied Materials, Inc. Method of die singulation using laser ablation and induction of internal defects with a laser
TW201609372A (en) 2014-07-08 2016-03-16 康寧公司 Methods and apparatuses for laser processing materials
LT2965853T (en) 2014-07-09 2016-11-25 High Q Laser Gmbh Processing of material using elongated laser beams
EP3169476A1 (en) 2014-07-14 2017-05-24 Corning Incorporated Interface block; system for and method of cutting a substrate being transparent within a range of wavelengths using such interface block
US9617180B2 (en) 2014-07-14 2017-04-11 Corning Incorporated Methods and apparatuses for fabricating glass articles
CN107073642A (en) * 2014-07-14 2017-08-18 康宁股份有限公司 The system and method for processing transparent material using length and the adjustable laser beam focal line of diameter
WO2016010949A1 (en) 2014-07-14 2016-01-21 Corning Incorporated Method and system for forming perforations
EP3169479B1 (en) 2014-07-14 2019-10-02 Corning Incorporated Method of and system for arresting incident crack propagation in a transparent material
DE102014213775B4 (en) * 2014-07-15 2018-02-15 Innolas Solutions Gmbh Method and device for laser-based processing of flat, crystalline substrates, in particular of semiconductor substrates
US9859162B2 (en) 2014-09-11 2018-01-02 Alta Devices, Inc. Perforation of films for separation
CN104367481A (en) * 2014-09-21 2015-02-25 四川制药制剂有限公司 Processing technology for cefcapene pivoxil hydrochloride
JP6347714B2 (en) * 2014-10-02 2018-06-27 株式会社ディスコ Wafer processing method
JP6360411B2 (en) * 2014-10-09 2018-07-18 株式会社ディスコ Wafer processing method
EP3206829B1 (en) * 2014-10-13 2019-01-09 Evana Technologies, UAB Method of laser processing for substrate cleaving or dicing through forming "spike-like" shaped damage structures
WO2016069822A1 (en) * 2014-10-31 2016-05-06 Corning Incorporated Laser welded glass packages and methods of making
US10017411B2 (en) 2014-11-19 2018-07-10 Corning Incorporated Methods of separating a glass web
US10047001B2 (en) 2014-12-04 2018-08-14 Corning Incorporated Glass cutting systems and methods using non-diffracting laser beams
US10083843B2 (en) 2014-12-17 2018-09-25 Ultratech, Inc. Laser annealing systems and methods with ultra-short dwell times
CN104625433A (en) * 2014-12-31 2015-05-20 武汉华工激光工程有限责任公司 Method for cutting LED lamp filament transparent material support
WO2016115017A1 (en) 2015-01-12 2016-07-21 Corning Incorporated Laser cutting of thermally tempered substrates using the multi photon absorption method
CN104630899B (en) * 2015-01-17 2017-09-22 王宏兴 The separation method of diamond layer
WO2016119915A1 (en) * 2015-01-28 2016-08-04 Siltectra Gmbh Transparent and highly stable display protection
JP6395633B2 (en) 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
GB201502149D0 (en) * 2015-02-09 2015-03-25 Spi Lasers Uk Ltd Apparatus and method for laser welding
JP6395632B2 (en) 2015-02-09 2018-09-26 株式会社ディスコ Wafer generation method
JP6495056B2 (en) * 2015-03-06 2019-04-03 株式会社ディスコ Single crystal substrate processing method
JP2016171214A (en) 2015-03-12 2016-09-23 株式会社ディスコ Processing method of single crystal substrate
WO2016160391A1 (en) 2015-03-27 2016-10-06 Corning Incorporated Gas permeable window and method of fabricating the same
JP6429715B2 (en) 2015-04-06 2018-11-28 株式会社ディスコ Wafer generation method
JP6425606B2 (en) 2015-04-06 2018-11-21 株式会社ディスコ Wafer production method
JP6494382B2 (en) 2015-04-06 2019-04-03 株式会社ディスコ Wafer generation method
DE102015004603A1 (en) 2015-04-09 2016-10-13 Siltectra Gmbh Combined wafer fabrication process with laser treatment and temperature-induced stresses
JP6456766B2 (en) * 2015-05-08 2019-01-23 株式会社ディスコ Wafer processing method
CN104827191A (en) * 2015-05-12 2015-08-12 大族激光科技产业集团股份有限公司 Laser cutting method for sapphire
CN106197262B (en) * 2015-05-29 2019-02-05 宝山钢铁股份有限公司 A kind of rectangular piece position and angle measurement method
JP6472333B2 (en) * 2015-06-02 2019-02-20 株式会社ディスコ Wafer generation method
JP6478821B2 (en) * 2015-06-05 2019-03-06 株式会社ディスコ Wafer generation method
CN105098098B (en) * 2015-06-11 2017-06-09 京东方科技集团股份有限公司 A kind of sealed in unit and its application method
US10675715B2 (en) 2015-06-23 2020-06-09 Mitsubishi Electric Corporation Semiconductor element manufacturing method and manufacturing device
JP6700581B2 (en) * 2015-06-25 2020-05-27 日本電気硝子株式会社 Method and apparatus for cutting tube glass, and method for manufacturing tube glass product
TWI533024B (en) 2015-06-26 2016-05-11 閤康生物科技股份有限公司 Sample collection device and sample collection device array
DE102015110422A1 (en) 2015-06-29 2016-12-29 Schott Ag Laser processing of a multiphase transparent material, as well as multiphase composite material
JP6482423B2 (en) 2015-07-16 2019-03-13 株式会社ディスコ Wafer generation method
JP6472347B2 (en) 2015-07-21 2019-02-20 株式会社ディスコ Thinning method of wafer
JP6482425B2 (en) 2015-07-21 2019-03-13 株式会社ディスコ Thinning method of wafer
US20170051884A1 (en) * 2015-08-19 2017-02-23 Soraa Laser Diode, Inc. Integrated light source using a laser diode
JP6260601B2 (en) 2015-10-02 2018-01-17 日亜化学工業株式会社 Manufacturing method of semiconductor device
DE102015116848A1 (en) 2015-10-05 2017-04-06 Schott Ag Dielectric workpiece with a zone of defined strength and method for its production and its use
JP6625854B2 (en) * 2015-10-06 2019-12-25 株式会社ディスコ Optical device wafer processing method
KR101716369B1 (en) * 2015-10-19 2017-03-27 주식회사 이오테크닉스 Auto inspection apparatus and method of laser processing apparatus
JP6562819B2 (en) * 2015-11-12 2019-08-21 株式会社ディスコ Method for separating SiC substrate
CN105365061A (en) * 2015-11-18 2016-03-02 无锡科诺达电子有限公司 Precise cutting instrument for sapphires
JP2017107903A (en) * 2015-12-07 2017-06-15 株式会社ディスコ Processing method of wafer
CN106881531A (en) * 2015-12-10 2017-06-23 彭翔 Method and system for cutting crisp and hard material
CN105397236A (en) * 2015-12-26 2016-03-16 浙江一比邻焊割机械股份有限公司 Efficient and energy-saving welding torch
CN105436710B (en) * 2015-12-30 2019-03-05 大族激光科技产业集团股份有限公司 A kind of laser-stripping method of Silicon Wafer
DE102016000051A1 (en) * 2016-01-05 2017-07-06 Siltectra Gmbh Method and apparatus for planar generation of modifications in solids
US10518358B1 (en) 2016-01-28 2019-12-31 AdlOptica Optical Systems GmbH Multi-focus optics
US10466288B2 (en) * 2016-02-10 2019-11-05 Roger Smith Fiber optic pulsed polarimetry
US10249506B2 (en) 2016-03-03 2019-04-02 Gan Systems Inc. GaN-on-si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof
US10283501B2 (en) 2016-03-03 2019-05-07 Gan Systems Inc. GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof
JP6666173B2 (en) * 2016-03-09 2020-03-13 株式会社ディスコ Laser processing equipment
JP6690983B2 (en) 2016-04-11 2020-04-28 株式会社ディスコ Wafer generation method and actual second orientation flat detection method
JP6633447B2 (en) * 2016-04-27 2020-01-22 株式会社ディスコ Wafer processing method
JP2017202488A (en) * 2016-05-09 2017-11-16 株式会社ディスコ Laser processing device
CN105945422B (en) * 2016-06-12 2018-01-05 西安中科微精光子制造科技有限公司 A kind of ultrafast laser microfabrication system
CN109641315A (en) 2016-06-14 2019-04-16 艾维纳科技有限责任公司 Laser processing and a kind of system cut using Multi sectional condenser lens or cut wafer
WO2018011618A1 (en) 2016-07-13 2018-01-18 Evana Technologies, Uab Method and system for cleaving a substrate with a focused converging ring-shaped laser beam
JP2019529112A (en) 2016-07-29 2019-10-17 コーニング インコーポレイテッド Apparatus and method for laser machining
JP6698468B2 (en) * 2016-08-10 2020-05-27 株式会社ディスコ Wafer generation method
KR20190043586A (en) 2016-08-30 2019-04-26 코닝 인코포레이티드 Laser processing of transparent materials
JP2018063987A (en) * 2016-10-11 2018-04-19 株式会社ディスコ Wafer processing method
WO2018072659A1 (en) * 2016-10-20 2018-04-26 胡绍勤 Method for manufacturing speed regulation groove part
TW201831414A (en) * 2016-12-13 2018-09-01 美商康寧公司 Methods for laser processing transparent workpieces by forming score lines
US10505072B2 (en) 2016-12-16 2019-12-10 Nichia Corporation Method for manufacturing light emitting element
US10502550B2 (en) * 2016-12-21 2019-12-10 Kennametal Inc. Method of non-destructive testing a cutting insert to determine coating thickness
TWI612621B (en) * 2017-01-25 2018-01-21 矽品精密工業股份有限公司 Electronic element and the manufacture thereof
CN106981457A (en) * 2017-02-13 2017-07-25 武汉澳谱激光科技有限公司 For shielding integrated circuit high-density packages electromagnetic interference method and laser process equipment
JP6620825B2 (en) 2017-02-27 2019-12-18 日亜化学工業株式会社 Manufacturing method of semiconductor device
TW201839830A (en) * 2017-04-20 2018-11-01 矽品精密工業股份有限公司 Cutting method
US10626040B2 (en) 2017-06-15 2020-04-21 Corning Incorporated Articles capable of individual singulation
JP2019024038A (en) * 2017-07-24 2019-02-14 株式会社ディスコ Wafer processing method
DE102017121140A1 (en) * 2017-09-01 2019-03-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laser processing of a transparent workpiece
US10347534B2 (en) * 2017-09-12 2019-07-09 Nxp B.V. Variable stealth laser dicing process
CN107745188A (en) * 2017-09-30 2018-03-02 深圳信息职业技术学院 A kind of picosecond laser process equipment
CN109904296A (en) * 2017-12-08 2019-06-18 昱鑫制造股份有限公司 The cutting method and semiconductor packages unit that die-filling group of semiconductor package
WO2019151185A1 (en) * 2018-01-31 2019-08-08 Hoya株式会社 Method for producing glass substrate for magnetic disk
CN108526711B (en) * 2018-03-29 2020-01-10 歌尔股份有限公司 Method for improving nanosecond pulse width ultraviolet laser cutting
CN110418513A (en) * 2018-04-28 2019-11-05 大族激光科技产业集团股份有限公司 Method, apparatus, storage medium and the laser that laser is uncapped are uncapped equipment
JP2020009988A (en) 2018-07-12 2020-01-16 株式会社ディスコ Ultrasonic horn and division method of wafer
CN109014677A (en) * 2018-08-23 2018-12-18 苏州新代数控设备有限公司 Welding robot bond pad locations teaching method based on laser ranging
US10589445B1 (en) * 2018-10-29 2020-03-17 Semivation, LLC Method of cleaving a single crystal substrate parallel to its active planar surface and method of using the cleaved daughter substrate
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods

Family Cites Families (473)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB125120A (en) 1900-01-01
US2005A (en) * 1841-03-16 Improvement in the manner of constructing molds for casting butt-hinges
US2002A (en) * 1841-03-12 Tor and planter for plowing
US411800A (en) * 1889-10-01 Watch-case spring
US3448510A (en) 1966-05-20 1969-06-10 Western Electric Co Methods and apparatus for separating articles initially in a compact array,and composite assemblies so formed
JPS4624989Y1 (en) 1967-08-31 1971-08-28
US3629545A (en) 1967-12-19 1971-12-21 Western Electric Co Laser substrate parting
GB1246481A (en) * 1968-03-29 1971-09-15 Pilkington Brothers Ltd Improvements in or relating to the cutting of glass
US3613974A (en) 1969-03-10 1971-10-19 Saint Gobain Apparatus for cutting glass
JPS4812599Y1 (en) 1969-03-24 1973-04-05
JPS4812599B1 (en) 1969-07-09 1973-04-21
US3610871A (en) 1970-02-19 1971-10-05 Western Electric Co Initiation of a controlled fracture
US3626141A (en) * 1970-04-30 1971-12-07 Quantronix Corp Laser scribing apparatus
US3824678A (en) 1970-08-31 1974-07-23 North American Rockwell Process for laser scribing beam lead semiconductor wafers
JPS5133952Y2 (en) 1971-06-22 1976-08-23
US3909582A (en) 1971-07-19 1975-09-30 American Can Co Method of forming a line of weakness in a multilayer laminate
US3790744A (en) 1971-07-19 1974-02-05 American Can Co Method of forming a line of weakness in a multilayer laminate
US3790051A (en) 1971-09-07 1974-02-05 Radiant Energy Systems Semiconductor wafer fracturing technique employing a pressure controlled roller
US3800991A (en) 1972-04-10 1974-04-02 Ppg Industries Inc Method of and an apparatus for cutting glass
SE403280B (en) 1972-10-12 1978-08-07 Glaverbel Seen and apparatus that skera of glass or glass-crystalline material lengs a line bestemd
JPS5628630B2 (en) 1973-05-30 1981-07-03
JPS5628630Y2 (en) 1974-10-30 1981-07-07
JPS5157283A (en) 1974-11-15 1976-05-19 Nippon Electric Co Handotaikibanno bunkatsuhoho
US4046985A (en) 1974-11-25 1977-09-06 International Business Machines Corporation Semiconductor wafer alignment apparatus
US3970819A (en) * 1974-11-25 1976-07-20 International Business Machines Corporation Backside laser dicing system
JPS5333050Y2 (en) 1975-01-17 1978-08-15
US4190759A (en) 1975-08-27 1980-02-26 Hitachi, Ltd. Processing of photomask
US4027137A (en) 1975-09-17 1977-05-31 International Business Machines Corporation Laser drilling nozzle
JPS5836939Y2 (en) 1975-11-11 1983-08-19
NL7609815A (en) 1976-09-03 1978-03-07 Philips Nv A method of manufacturing a semiconductor device, and semiconductor device manufactured by means of the method.
JPS5641173B2 (en) 1976-09-08 1981-09-26
US4092518A (en) * 1976-12-07 1978-05-30 Laser Technique S.A. Method of decorating a transparent plastics material article by means of a laser beam
JPS53141573U (en) 1977-04-15 1978-11-08
JPS53141573A (en) 1977-05-16 1978-12-09 Toshiba Corp Pellet dividing method of semiconductor wafer
JPS5627848B2 (en) 1978-06-10 1981-06-27
JPS5857767B2 (en) 1979-03-08 1983-12-21 Tokyo Daigaku
US4242152A (en) 1979-05-14 1980-12-30 National Semiconductor Corporation Method for adjusting the focus and power of a trimming laser
JPS5628630A (en) 1979-08-16 1981-03-20 Kawasaki Steel Corp Temperature controlling method of high temperature high pressure reacting cylinder
JPS6041478B2 (en) 1979-09-10 1985-09-17 Fujitsu Ltd
JPS5676522U (en) 1979-11-17 1981-06-22
JPS5676522A (en) 1979-11-29 1981-06-24 Toshiba Corp Formation of semiconductor thin film
JPH0219839Y2 (en) 1980-02-29 1990-05-31
JPS6043236B2 (en) * 1980-03-12 1985-09-27 Matsushita Electric Ind Co Ltd
US4336439A (en) * 1980-10-02 1982-06-22 Coherent, Inc. Method and apparatus for laser scribing and cutting
US4392476A (en) * 1980-12-23 1983-07-12 Lazare Kaplan & Sons, Inc. Method and apparatus for placing identifying indicia on the surface of precious stones including diamonds
JPS57106618A (en) * 1980-12-24 1982-07-02 Eisai Co Ltd Anticancer agent consisting of polyprenyl compound
JPS6055640B2 (en) 1980-12-29 1985-12-05 Matsushita Electric Works Ltd
DE3110235C2 (en) 1981-03-17 1991-02-21 Trumpf Gmbh & Co, 7257 Ditzingen, De
JPS5836939A (en) 1981-08-26 1983-03-04 Toshiba Corp Cutting method for glass wafer
JPH03764B2 (en) 1981-09-28 1991-01-08 Nippon Kogaku Kk
JPS6259918B2 (en) 1981-10-01 1987-12-14 Matsushita Electric Ind Co Ltd
JPS5857767U (en) 1981-10-06 1983-04-19
US4475027A (en) 1981-11-17 1984-10-02 Allied Corporation Optical beam homogenizer
JPS58181492A (en) * 1982-04-02 1983-10-24 Gretag Ag Method and device for focussing optical beam having coherence
JPS58171783A (en) 1982-04-02 1983-10-08 Hitachi Ltd Magnetic bubble memory chip
JPS58171783U (en) 1982-05-14 1983-11-16
JPS58181492U (en) 1982-05-25 1983-12-03
JPS5916344A (en) 1982-07-19 1984-01-27 Toshiba Corp Device of wafer scribing with laser
JPS6054151B2 (en) * 1982-10-22 1985-11-28 Tokyo Shibaura Electric Co
JPS5976687U (en) 1982-11-17 1984-05-24
EP0129603A4 (en) 1982-12-17 1985-06-10 Inoue Japax Res Laser machining apparatus.
JPS59141233A (en) 1983-02-02 1984-08-13 Nec Corp Manufacture of semiconductor device
JPS59150691A (en) 1983-02-15 1984-08-28 Matsushita Electric Ind Co Ltd Laser working machine
JPH0221902Y2 (en) 1983-02-22 1990-06-12
JPS59141233U (en) 1983-03-11 1984-09-20
JPS59150691U (en) 1983-03-29 1984-10-08
JPS624341Y2 (en) 1983-07-08 1987-01-31
JPH0611071B2 (en) 1983-09-07 1994-02-09 三洋電機株式会社 Method for dividing compound semiconductor substrate
JPH0323465Y2 (en) 1983-09-26 1991-05-22
US4546231A (en) * 1983-11-14 1985-10-08 Group Ii Manufacturing Ltd. Creation of a parting zone in a crystal structure
JPS59130438A (en) * 1983-11-28 1984-07-27 Hitachi Ltd Method for separating plates
US4650619A (en) 1983-12-29 1987-03-17 Toshiba Ceramics Co., Ltd. Method of machining a ceramic member
JPH0144030B2 (en) 1983-12-30 1989-09-25 Fujitsu Ltd
JPS60167351A (en) * 1984-02-09 1985-08-30 Mitsubishi Electric Corp Manufacture of hybrid integrated circuit device
JPS60144985U (en) 1984-03-07 1985-09-26
JPS60167351U (en) 1984-04-17 1985-11-06
US4562333A (en) * 1984-09-04 1985-12-31 General Electric Company Stress assisted cutting of high temperature embrittled materials
EP0180767B1 (en) * 1984-10-11 1990-01-31 Hitachi, Ltd. Optical lens device
JPS6196439A (en) 1984-10-17 1986-05-15 Toray Ind Inc Lens defect inspecting instrument
JPH0554262B2 (en) 1984-11-07 1993-08-12 Tokyo Shibaura Electric Co
JPS61121453A (en) 1984-11-19 1986-06-09 Matsushita Electric Ind Co Ltd Braking and expanding process of fragile thin sheet
JPS6196439U (en) 1984-11-30 1986-06-20
JPS61112345U (en) 1984-12-25 1986-07-16
JPS61121453U (en) 1985-01-18 1986-07-31
JPH0511415B2 (en) 1985-03-26 1993-02-15 Nippon Telegraph & Telephone
JPS61229487A (en) 1985-04-03 1986-10-13 Hitachi Ltd Method for cutting glass by laser beam
ZA8602386B (en) 1985-04-16 1987-11-25 Colgate Palmolive Co Compositions to counter breath odor
US4689491A (en) * 1985-04-19 1987-08-25 Datasonics Corp. Semiconductor wafer scanning system
JPS624341A (en) 1985-06-29 1987-01-10 Toshiba Corp Manufacture of semiconductor device
JPS6240986A (en) * 1985-08-20 1987-02-21 Fuji Electric Corp Res & Dev Ltd Laser beam machining method
JPH0732281B2 (en) 1985-10-25 1995-04-10 株式会社日立製作所 Cleaving device and cleaving method
JPS6298684U (en) 1985-12-11 1987-06-23
AU584563B2 (en) * 1986-01-31 1989-05-25 Ciba-Geigy Ag Laser marking of ceramic materials, glazes, glass ceramics and glasses
JPH0429352Y2 (en) 1986-02-17 1992-07-16
US4691093A (en) 1986-04-22 1987-09-01 United Technologies Corporation Twin spot laser welding
JPH0750811B2 (en) * 1986-06-17 1995-05-31 松下電器産業株式会社 Cleaving method of semiconductor laser
JPH0563274B2 (en) * 1986-09-26 1993-09-10 Handotai Energy Kenkyusho
FR2605310B1 (en) 1986-10-16 1992-04-30 Comp Generale Electricite Method for reinforcing ceramic workpieces by laser treatment
US4815854A (en) 1987-01-19 1989-03-28 Nec Corporation Method of alignment between mask and semiconductor wafer
JPH0639572Y2 (en) 1987-02-27 1994-10-19 株式会社クボタ Multi-membrane perforator for transplanter
JPH0688149B2 (en) 1987-03-04 1994-11-09 株式会社半導体エネルギ−研究所 Light processing method
JPS63278692A (en) 1987-05-07 1988-11-16 D S Sukiyanaa:Kk Automatic focusing mechanism in laser beam machine
JPS63293939A (en) 1987-05-27 1988-11-30 Hitachi Ltd Manufacture of semiconductor integrated circuit device
JPS6438209A (en) 1987-08-04 1989-02-08 Nec Corp Preparation of semiconductor device
JPS6438209U (en) 1987-08-29 1989-03-07
JPH0617637Y2 (en) 1987-09-24 1994-05-11 小島プレス工業株式会社 Vehicle storage device
JPH01112130A (en) 1987-10-26 1989-04-28 Matsushita Electric Ind Co Ltd Method for evaluating infrared optical fiber
US5300942A (en) 1987-12-31 1994-04-05 Projectavision Incorporated High efficiency light valve projection system with decreased perception of spaces between pixels and/or hines
US4981525A (en) 1988-02-19 1991-01-01 Sanyo Electric Co., Ltd. Photovoltaic device
JPH0256987A (en) 1988-02-23 1990-02-26 Mitsubishi Electric Corp Mounting method of hybrid integrated circuit
FR2627409A1 (en) 1988-02-24 1989-08-25 Lectra Systemes Sa Laser cutting apparatus with a fume exhaust device
JPH01225510A (en) 1988-03-04 1989-09-08 Sumitomo Electric Ind Ltd Cutting and dividing method for semiconductor base
JPH01225509A (en) 1988-03-04 1989-09-08 Sumitomo Electric Ind Ltd Dividing method for semiconductor base
JPH01133701U (en) 1988-03-07 1989-09-12
US4908493A (en) * 1988-05-31 1990-03-13 Midwest Research Institute Method and apparatus for optimizing the efficiency and quality of laser material processing
JP2680039B2 (en) 1988-06-08 1997-11-19 株式会社日立製作所 Optical information recording / reproducing method and recording / reproducing apparatus
US4982166A (en) * 1989-03-01 1991-01-01 Morrow Clifford E Method and apparatus for combining two lower power laser beams to produce a combined higher power beam
DE69013047T2 (en) * 1989-05-08 1995-04-13 Philips Nv Process for splitting a plate made of brittle material.
JP2507665B2 (en) 1989-05-09 1996-06-12 株式会社東芝 Method for manufacturing metal cylindrical member for electron tube
JPH0737840Y2 (en) 1989-07-05 1995-08-30 東洋刃物株式会社 Perforated paper cutter
US5151135A (en) 1989-09-15 1992-09-29 Amoco Corporation Method for cleaning surfaces using UV lasers
JPH03124489A (en) * 1989-10-06 1991-05-28 Teijin Ltd Optical recording medium
JP2810151B2 (en) * 1989-10-07 1998-10-15 ホーヤ株式会社 Laser marking method
JPH0729855Y2 (en) 1989-10-25 1995-07-12 旭光学工業株式会社 Camera case
JPH03177051A (en) * 1989-12-05 1991-08-01 Kawasaki Steel Corp Method and device for cutting semiconductor wafer
JPH0757427B2 (en) * 1989-12-08 1995-06-21 三菱電機株式会社 Laser cutting machine
JP2891264B2 (en) 1990-02-09 1999-05-17 ローム 株式会社 Method for manufacturing semiconductor device
US5124927A (en) * 1990-03-02 1992-06-23 International Business Machines Corp. Latent-image control of lithography tools
US5132505A (en) 1990-03-21 1992-07-21 U.S. Philips Corporation Method of cleaving a brittle plate and device for carrying out the method
JPH03276662A (en) 1990-03-26 1991-12-06 Nippon Steel Corp Wafer cutting off process
JP2765746B2 (en) 1990-03-27 1998-06-18 科学技術振興事業団 Fine modification and processing method
JPH03124486U (en) 1990-03-29 1991-12-17
JP2620723B2 (en) 1990-05-24 1997-06-18 サンケン電気株式会社 Method for manufacturing semiconductor device
US5023877A (en) 1990-06-29 1991-06-11 The United States Of America As Represented By The Secretary Of The Air Force Miniature, optically pumped narrow line solid state laser
US5762744A (en) 1991-12-27 1998-06-09 Rohm Co., Ltd. Method of producing a semiconductor device using an expand tape
JP3024990B2 (en) * 1990-08-31 2000-03-27 山口日本石英株式会社 Cutting method of quartz glass material
JPH04110944A (en) * 1990-08-31 1992-04-13 Nippon Sekiei Glass Kk Marking method for transparent material
TW207588B (en) 1990-09-19 1993-06-11 Hitachi Seisakusyo Kk
JPH04143645A (en) 1990-10-05 1992-05-18 Nuclear Fuel Ind Ltd Melting point measuring method
JPH04167985A (en) 1990-10-31 1992-06-16 Nagasaki Pref Gov Method for cutting off wafer
JPH0740336Y2 (en) 1990-11-07 1995-09-20 株式会社クボタ Rice storage device for commercial rice cooker
FR2669427B1 (en) 1990-11-16 1993-01-22 Thomson Csf Device for controlling alignment of two optical channels and laser designation system provided with such a control device.
JPH04188847A (en) 1990-11-22 1992-07-07 Mitsubishi Electric Corp Adhesive tape
US5211805A (en) 1990-12-19 1993-05-18 Rangaswamy Srinivasan Cutting of organic solids by continuous wave ultraviolet irradiation
JPH0639572A (en) * 1991-01-11 1994-02-15 Souei Tsusho Kk Wafer cutting device
IL97479A (en) 1991-03-08 1994-01-25 Shafir Aaron Laser beam heating method and apparatus
JPH04111800U (en) 1991-03-16 1992-09-29
JPH04300084A (en) 1991-03-28 1992-10-23 Toshiba Corp Laser beam machine
JP3165192B2 (en) 1991-03-28 2001-05-14 株式会社東芝 Method for manufacturing semiconductor integrated circuit device
DE4113714A1 (en) * 1991-04-26 1992-10-29 Hoechst Ag Drawn packaging with integrated target breakage points and method for their production
JPH04339586A (en) 1991-05-13 1992-11-26 Mitsubishi Electric Corp Laser beam machine
JP3213338B2 (en) * 1991-05-15 2001-10-02 リコー応用電子研究所株式会社 Manufacturing method of thin film semiconductor device
US5230184A (en) 1991-07-05 1993-07-27 Motorola, Inc. Distributed polishing head
US5812261A (en) * 1992-07-08 1998-09-22 Active Impulse Systems, Inc. Method and device for measuring the thickness of opaque and transparent films
US5635976A (en) * 1991-07-17 1997-06-03 Micronic Laser Systems Ab Method and apparatus for the production of a structure by focused laser radiation on a photosensitively coated substrate
SG52223A1 (en) 1992-01-08 1998-09-28 Murata Manufacturing Co Component supply method
JP2627696B2 (en) 1992-01-17 1997-07-09 コマツ電子金属株式会社 Melt level control device and control method in CZ method
RU2024441C1 (en) 1992-04-02 1994-12-15 Владимир Степанович Кондратенко Process of cutting of nonmetal materials
US5254149A (en) 1992-04-06 1993-10-19 Ford Motor Company Process for determining the quality of temper of a glass sheet using a laser beam
JP3101421B2 (en) 1992-05-29 2000-10-23 住友重機械工業株式会社 Manufacturing method of shaped metal pattern
JP3088193B2 (en) 1992-06-05 2000-09-18 三菱電機株式会社 Method for manufacturing semiconductor device having LOC structure and lead frame used therein
GB9216643D0 (en) 1992-08-05 1992-09-16 Univ Loughborough Automatic operations on materials
CA2152067A1 (en) * 1992-12-18 1994-07-07 Boris Goldfarb Process and apparatus for etching an image within a solid article
JP3255741B2 (en) 1992-12-22 2002-02-12 リンテック株式会社 Wafer dicing method, radiation irradiation apparatus used for this method, and pressure-sensitive adhesive sheet for attaching a wafer
JP2720744B2 (en) 1992-12-28 1998-03-04 三菱電機株式会社 Laser processing machine
US5382770A (en) 1993-01-14 1995-01-17 Reliant Laser Corporation Mirror-based laser-processing system with visual tracking and position control of a moving laser spot
US5359176A (en) 1993-04-02 1994-10-25 International Business Machines Corporation Optics and environmental protection device for laser processing applications
US5321717A (en) 1993-04-05 1994-06-14 Yoshifumi Adachi Diode laser having minimal beam diameter and optics
US5637244A (en) * 1993-05-13 1997-06-10 Podarok International, Inc. Method and apparatus for creating an image by a pulsed laser beam inside a transparent material
WO1994029069A1 (en) * 1993-06-04 1994-12-22 Seiko Epson Corporation Apparatus and method for laser machining, and liquid crystal panel
JPH0775955A (en) 1993-06-17 1995-03-20 Disco Abrasive Syst Ltd Precision cutting device
US5580473A (en) 1993-06-21 1996-12-03 Sanyo Electric Co. Ltd. Methods of removing semiconductor film with energy beams
JPH0729855A (en) * 1993-07-12 1995-01-31 Sumitomo Electric Ind Ltd Expanding method of semiconductor wafer
US5699145A (en) * 1993-07-14 1997-12-16 Nikon Corporation Scanning type exposure apparatus
JPH0732281A (en) 1993-07-19 1995-02-03 Toyoda Mach Works Ltd Robot control device
JP2616247B2 (en) 1993-07-24 1997-06-04 日本電気株式会社 Method for manufacturing semiconductor device
JPH0740336A (en) 1993-07-30 1995-02-10 Sumitomo Electric Ind Ltd Diamond machining method
GB2281129B (en) * 1993-08-19 1997-04-09 United Distillers Plc Method of marking a body of glass
JPH0776167A (en) * 1993-09-08 1995-03-20 Miyachi Technos Kk Laser marking method
US5376793A (en) 1993-09-15 1994-12-27 Stress Photonics, Inc. Forced-diffusion thermal imaging apparatus and method
DE4331262C2 (en) * 1993-09-15 1996-05-15 Wissner Rolf Laser machine for machining a workpiece and method for controlling a laser machine
US5424548A (en) * 1993-09-21 1995-06-13 International Business Machines Corp. Pattern specific calibration for E-beam lithography
US5393482A (en) 1993-10-20 1995-02-28 United Technologies Corporation Method for performing multiple beam laser sintering employing focussed and defocussed laser beams
JP2760288B2 (en) 1993-12-28 1998-05-28 日本電気株式会社 Via hole forming method and film cutting method
DE4404141A1 (en) 1994-02-09 1995-08-10 Fraunhofer Ges Forschung Device and method for laser beam shaping, especially in laser beam surface processing
US5631734A (en) 1994-02-10 1997-05-20 Affymetrix, Inc. Method and apparatus for detection of fluorescently labeled materials
JP3162255B2 (en) * 1994-02-24 2001-04-25 三菱電機株式会社 Laser processing method and apparatus
US5521999A (en) 1994-03-17 1996-05-28 Eastman Kodak Company Optical system for a laser printer
JPH07263382A (en) 1994-03-24 1995-10-13 Kawasaki Steel Corp Tape for fixing wafer
US5656186A (en) 1994-04-08 1997-08-12 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
US5504772A (en) 1994-09-09 1996-04-02 Deacon Research Laser with electrically-controlled grating reflector
JPH09150286A (en) * 1995-06-26 1997-06-10 Corning Inc Method and apparatus for cutting brittle material
US5776220A (en) * 1994-09-19 1998-07-07 Corning Incorporated Method and apparatus for breaking brittle materials
US5622540A (en) * 1994-09-19 1997-04-22 Corning Incorporated Method for breaking a glass sheet
KR960015001A (en) * 1994-10-07 1996-05-22 가나이 쓰토무 Method and apparatus for manufacturing a semiconductor substrate and for inspecting pattern defects on an inspected object
JP3374880B2 (en) 1994-10-26 2003-02-10 三菱電機株式会社 Semiconductor device manufacturing method and semiconductor device
JP3535241B2 (en) 1994-11-18 2004-06-07 シャープ株式会社 Semiconductor device and manufacturing method thereof
JPH08148692A (en) 1994-11-24 1996-06-07 Sony Corp Manufacture of thin-film semiconductor device
US5543365A (en) * 1994-12-02 1996-08-06 Texas Instruments Incorporated Wafer scribe technique using laser by forming polysilicon
JPH08197271A (en) * 1995-01-27 1996-08-06 Ricoh Co Ltd Method for cracking brittle material and device for cracking brittle material
US5841543A (en) * 1995-03-09 1998-11-24 Texas Instruments Incorporated Method and apparatus for verifying the presence of a material applied to a substrate
JPH08264488A (en) 1995-03-22 1996-10-11 Nec Corp Wafer scribing apparatus and method
JP3509985B2 (en) * 1995-03-24 2004-03-22 三菱電機株式会社 Chip separation method for semiconductor device
KR0174773B1 (en) * 1995-03-31 1999-04-01 모리시다 요이치 Inspecting method for semiconductor device
US5786560A (en) 1995-03-31 1998-07-28 Panasonic Technologies, Inc. 3-dimensional micromachining with femtosecond laser pulses
KR970008386A (en) 1995-07-07 1997-02-24 하라 세이지 A method of dividing a substrate and a dividing device
JP2737744B2 (en) 1995-04-26 1998-04-08 日本電気株式会社 Wafer probing equipment
US5870133A (en) * 1995-04-28 1999-02-09 Minolta Co., Ltd. Laser scanning device and light source thereof having temperature correction capability
US5663980A (en) 1995-05-22 1997-09-02 Adachi; Yoshi Semiconductor laser device having changeable wavelength, polarization mode, and beam shape image
JP3138613B2 (en) * 1995-05-24 2001-02-26 三菱電機株式会社 Laser processing equipment
AT183152T (en) 1995-06-23 1999-08-15 Andreas Peiker Telephone device with a handset having a talk and / or earshell
JPH0917756A (en) 1995-06-28 1997-01-17 Toshiba Corp Protective type for semiconductor and its usage method
JPH0929472A (en) * 1995-07-14 1997-02-04 Hitachi Ltd Method and device for splitting and chip material
JP2809303B2 (en) 1995-07-28 1998-10-08 関西日本電気株式会社 Wafer cutting method
JPH09107168A (en) * 1995-08-07 1997-04-22 Mitsubishi Electric Corp Laser processing method of wiring board, laser processing device of wiring board and carbon dioxide gas laser oscillator for wiring board processing
WO1997007927A1 (en) 1995-08-31 1997-03-06 Corning Incorporated Method and apparatus for breaking brittle materials
US6057525A (en) * 1995-09-05 2000-05-02 United States Enrichment Corporation Method and apparatus for precision laser micromachining
US5641416A (en) 1995-10-25 1997-06-24 Micron Display Technology, Inc. Method for particulate-free energy beam cutting of a wafer of die assemblies
EP0857098A1 (en) 1995-10-27 1998-08-12 E.I. Du Pont De Nemours And Company Method and apparatus for laser cutting materials
US5747769A (en) 1995-11-13 1998-05-05 General Electric Company Method of laser forming a slot
KR0171947B1 (en) * 1995-12-08 1999-03-20 김주용 Exposure apparatus and for forming a fine pattern and method thereof
US5932119A (en) * 1996-01-05 1999-08-03 Lazare Kaplan International, Inc. Laser marking system
MY118036A (en) 1996-01-22 2004-08-30 Lintec Corp Wafer dicing/bonding sheet and process for producing semiconductor device
JP3592018B2 (en) 1996-01-22 2004-11-24 リンテック株式会社 Polyimide adhesive sheet and process film for polyimide
JP3292021B2 (en) * 1996-01-30 2002-06-17 三菱電機株式会社 Laser processing method and laser processing apparatus
JPH09213662A (en) 1996-01-31 1997-08-15 Toshiba Corp Method of splitting wafer and method of manufacturing semiconductor device
JPH09216085A (en) * 1996-02-07 1997-08-19 Canon Inc Method and equipment for cutting substrate
JP3027768U (en) 1996-02-08 1996-08-13 株式会社アールイシダ Health slippers
KR100479962B1 (en) 1996-02-09 2005-05-16 어드밴스드 레이저 세퍼래이션 인터내셔널 비.브이. Laser separation of semiconductor elements formed in a wafer of semiconductor material
US5925024A (en) 1996-02-16 1999-07-20 Joffe; Michael A Suction device with jet boost
DE69729659T2 (en) * 1996-02-28 2005-06-23 Johnson, Kenneth C., Santa Clara Mikrolinsen raster device for microlithography and for confocus microscopy with large recording field
JPH09306839A (en) 1996-03-12 1997-11-28 Sharp Corp Method for melting/crystallizing semiconductor and method for activating semiconductor impurity
JP3660741B2 (en) * 1996-03-22 2005-06-15 株式会社日立製作所 Method for manufacturing electronic circuit device
JPH09253877A (en) * 1996-03-25 1997-09-30 Sumitomo Electric Ind Ltd Excimer laser beam processing method, and processed substrate
DE69705827T2 (en) 1996-03-25 2001-11-08 Nippon Sheet Glass Co Ltd Laser production method for glass substrates, and differential grides produced therefor
US5880777A (en) 1996-04-15 1999-03-09 Massachusetts Institute Of Technology Low-light-level imaging and image processing
US5807380A (en) 1996-04-26 1998-09-15 Dishler; Jon G. Optical guide and method for use in corrective laser eye surgery
JPH09298339A (en) 1996-04-30 1997-11-18 Rohm Co Ltd Manufacture of semiconductor laser
US6087617A (en) * 1996-05-07 2000-07-11 Troitski; Igor Nikolaevich Computer graphics system for generating an image reproducible inside optically transparent material
JP3259014B2 (en) 1996-07-24 2002-02-18 ミヤチテクノス株式会社 Scanning laser marking method and apparatus
US5736709A (en) * 1996-08-12 1998-04-07 Armco Inc. Descaling metal with a laser having a very short pulse width and high average power
JPH1071483A (en) 1996-08-29 1998-03-17 Hitachi Constr Mach Co Ltd Method for shearing brittle material
US6172757B1 (en) * 1996-09-25 2001-01-09 Vanguard International Semiconductor Corporation Lever sensor for stepper field-by-field focus and leveling system
DK109197A (en) * 1996-09-30 1998-03-31 Force Instituttet Process for processing a material by means of a laser beam
JPH10128567A (en) 1996-10-30 1998-05-19 Nec Kansai Ltd Laser beam splitting method
US20020127576A1 (en) * 1997-06-16 2002-09-12 Genentech, Inc. Secreted and transmembrane polypeptides and nucleic acids encoding the same
DE19646332C2 (en) * 1996-11-09 2000-08-10 Fraunhofer Ges Forschung Method for changing the optical behavior on the surface and / or within a workpiece by means of a laser
JPH10163780A (en) 1996-12-04 1998-06-19 Ngk Insulators Ltd Production of oscillator composed of piezoelectric single crystal
US6228114B1 (en) 1997-04-01 2001-05-08 Joseph Y. Lee Adjustable corneal ring
JP3468676B2 (en) 1996-12-19 2003-11-17 リンテック株式会社 Manufacturing method of chip body
US5867324A (en) 1997-01-28 1999-02-02 Lightwave Electronics Corp. Side-pumped laser with shaped laser beam
JP3421523B2 (en) * 1997-01-30 2003-06-30 三洋電機株式会社 Wafer splitting method
US6312800B1 (en) 1997-02-10 2001-11-06 Lintec Corporation Pressure sensitive adhesive sheet for producing a chip
JPH10305420A (en) * 1997-03-04 1998-11-17 Ngk Insulators Ltd Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device
US6529362B2 (en) 1997-03-06 2003-03-04 Applied Materials Inc. Monocrystalline ceramic electrostatic chuck
US5976392A (en) 1997-03-07 1999-11-02 Yageo Corporation Method for fabrication of thin film resistor
WO1998044718A2 (en) 1997-04-01 1998-10-08 Agris-Schoen Vision Systems, Inc. High-precision-resolution image acquisision apparatus and method
US6277067B1 (en) 1997-04-04 2001-08-21 Kerry L. Blair Method and portable colposcope useful in cervical cancer detection
AU7379398A (en) 1997-05-12 1998-12-08 Jonathan S. Dahm Improved laser cutting apparatus
JP3230572B2 (en) * 1997-05-19 2001-11-19 日亜化学工業株式会社 Method for manufacturing nitride compound semiconductor device and semiconductor light emitting device
US6156030A (en) * 1997-06-04 2000-12-05 Y-Beam Technologies, Inc. Method and apparatus for high precision variable rate material removal and modification
JPH115185A (en) * 1997-06-11 1999-01-12 Nikon Corp Laser processing device
BE1011208A4 (en) * 1997-06-11 1999-06-01 Cuvelier Georges Capping METHOD FOR GLASS PIECES.
JPH1110376A (en) 1997-06-25 1999-01-19 Nagasaki Pref Gov Cutting method
US6327090B1 (en) 1997-07-03 2001-12-04 Levelite Technology, Inc. Multiple laser beam generation
DE19728766C1 (en) * 1997-07-07 1998-12-17 Schott Rohrglas Gmbh Use of a method for producing a predetermined breaking point in a vitreous body
JPH1128586A (en) 1997-07-08 1999-02-02 Keyence Corp Laser beam marking device
US6294439B1 (en) 1997-07-23 2001-09-25 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
US5863813A (en) * 1997-08-20 1999-01-26 Micron Communications, Inc. Method of processing semiconductive material wafers and method of forming flip chips and semiconductor chips
JP3498895B2 (en) * 1997-09-25 2004-02-23 シャープ株式会社 Substrate cutting method and display panel manufacturing method
US6392683B1 (en) * 1997-09-26 2002-05-21 Sumitomo Heavy Industries, Ltd. Method for making marks in a transparent material by using a laser
JP3231708B2 (en) 1997-09-26 2001-11-26 住友重機械工業株式会社 Marking method of transparent material
JPH11121517A (en) 1997-10-09 1999-04-30 Hitachi Ltd Device and method for mounting semiconductor device
JP3292294B2 (en) * 1997-11-07 2002-06-17 住友重機械工業株式会社 Marking method and marking device using laser
JPH11162889A (en) 1997-11-25 1999-06-18 Sony Corp Equipment and method for breaking/stretching wafer
JP3076290B2 (en) 1997-11-28 2000-08-14 山形日本電気株式会社 Semiconductor chip pickup apparatus and method
JPH11156564A (en) * 1997-11-28 1999-06-15 Toshiba Ceramics Co Ltd Heat resistant transparent member and manufacture
JP3449201B2 (en) * 1997-11-28 2003-09-22 日亜化学工業株式会社 Method for manufacturing nitride semiconductor device
JP3532100B2 (en) 1997-12-03 2004-05-31 日本碍子株式会社 Laser cleaving method
JPH11177176A (en) * 1997-12-10 1999-07-02 Hitachi Cable Ltd Semiconductor laser
JP3604550B2 (en) 1997-12-16 2004-12-22 日亜化学工業株式会社 Method for manufacturing nitride semiconductor device
JP3208730B2 (en) * 1998-01-16 2001-09-17 住友重機械工業株式会社 Marking method of light transmissive material
JPH11204551A (en) 1998-01-19 1999-07-30 Sony Corp Manufacture of semiconductor device
JP3352934B2 (en) * 1998-01-21 2002-12-03 理化学研究所 High intensity ultrashort pulse laser processing method and apparatus
JP4132172B2 (en) 1998-02-06 2008-08-13 浜松ホトニクス株式会社 Pulse laser processing equipment
JP3455102B2 (en) * 1998-02-06 2003-10-14 三菱電機株式会社 Semiconductor wafer chip separation method
US6641662B2 (en) 1998-02-17 2003-11-04 The Trustees Of Columbia University In The City Of New York Method for fabricating ultra thin single-crystal metal oxide wave retarder plates and waveguide polarization mode converter using the same
JPH11240730A (en) * 1998-02-27 1999-09-07 Nec Kansai Ltd Break cutting of brittle material
US6183092B1 (en) * 1998-05-01 2001-02-06 Diane Troyer Laser projection apparatus with liquid-crystal light valves and scanning reading beam
US6057180A (en) 1998-06-05 2000-05-02 Electro Scientific Industries, Inc. Method of severing electrically conductive links with ultraviolet laser output
JP3152206B2 (en) * 1998-06-19 2001-04-03 日本電気株式会社 Autofocus device and autofocus method
JP2000015467A (en) 1998-07-01 2000-01-18 Shin Meiwa Ind Co Ltd Working method of workpiece by beam and its working device
US6181728B1 (en) 1998-07-02 2001-01-30 General Scanning, Inc. Controlling laser polarization
US6257244B1 (en) * 1998-07-13 2001-07-10 Raymond F. Williams Uniformly size adjustable hair-enhancing cap and methods of manufacture and of custom fitting
JP2000183358A (en) 1998-07-17 2000-06-30 Sony Corp Manufacture of thin-film semiconductor device
JP3784543B2 (en) 1998-07-29 2006-06-14 Ntn株式会社 Pattern correction apparatus and correction method
JP3156776B2 (en) 1998-08-03 2001-04-16 日本電気株式会社 Laser irradiation method
JP4396953B2 (en) * 1998-08-26 2010-01-13 三星電子株式会社Samsung Electronics Co.,Ltd. Laser cutting apparatus and cutting method
US6402004B1 (en) 1998-09-16 2002-06-11 Hoya Corporation Cutting method for plate glass mother material
JP3605651B2 (en) 1998-09-30 2004-12-22 日立化成工業株式会社 Method for manufacturing semiconductor device
JP2000124537A (en) 1998-10-21 2000-04-28 Sharp Corp Manufacture of semiconductor laser chip and manufacturing device used therefor
US6413839B1 (en) 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
JP2000133859A (en) 1998-10-27 2000-05-12 Sumitomo Heavy Ind Ltd Laser marking method and device using laser
US6172329B1 (en) * 1998-11-23 2001-01-09 Minnesota Mining And Manufacturing Company Ablated laser feature shape reproduction control
JP3178524B2 (en) * 1998-11-26 2001-06-18 住友重機械工業株式会社 Laser marking method and apparatus and marked member
TW415036B (en) 1998-11-30 2000-12-11 Samsung Electronics Co Ltd Wafer separation device and wafer separation method using the same
US6420678B1 (en) * 1998-12-01 2002-07-16 Brian L. Hoekstra Method for separating non-metallic substrates
US6252197B1 (en) * 1998-12-01 2001-06-26 Accudyne Display And Semiconductor Systems, Inc. Method and apparatus for separating non-metallic substrates utilizing a supplemental mechanical force applicator
US6259058B1 (en) * 1998-12-01 2001-07-10 Accudyne Display And Semiconductor Systems, Inc. Apparatus for separating non-metallic substrates
US6211488B1 (en) * 1998-12-01 2001-04-03 Accudyne Display And Semiconductor Systems, Inc. Method and apparatus for separating non-metallic substrates utilizing a laser initiated scribe
IL127388D0 (en) * 1998-12-03 1999-10-28 Universal Crystal Ltd Material processing applications of lasers using optical breakdown
JP2000195828A (en) 1998-12-25 2000-07-14 Denso Corp Method and device for cutting/separating wafer
US6127005A (en) 1999-01-08 2000-10-03 Rutgers University Method of thermally glazing an article
JP2000219528A (en) 1999-01-18 2000-08-08 Samsung Sdi Co Ltd Method for cutting glass substrate and device therefor
EP1022778A1 (en) 1999-01-22 2000-07-26 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
JP2000210785A (en) 1999-01-26 2000-08-02 Mitsubishi Heavy Ind Ltd Laser beam machine with plural beams
JP3569147B2 (en) * 1999-01-26 2004-09-22 松下電器産業株式会社 Substrate cutting method
JP4040819B2 (en) 1999-02-03 2008-01-30 株式会社東芝 Wafer dividing method and semiconductor device manufacturing method
EP1026735A3 (en) 1999-02-03 2004-01-02 Kabushiki Kaisha Toshiba Method of dividing a wafer and method of manufacturing a semiconductor device
JP4119028B2 (en) 1999-02-19 2008-07-16 小池酸素工業株式会社 Laser piercing method
JP2000237885A (en) 1999-02-19 2000-09-05 Koike Sanso Kogyo Co Ltd Laser beam cutting method
TW428295B (en) 1999-02-24 2001-04-01 Matsushita Electronics Corp Resin-sealing semiconductor device, the manufacturing method and the lead frame thereof
JP3426154B2 (en) 1999-02-26 2003-07-14 昭和電線電纜株式会社 Manufacturing method of optical waveguide with grating
JP2000247671A (en) * 1999-03-04 2000-09-12 Takatori Corp Method for cutting glass
TW445545B (en) 1999-03-10 2001-07-11 Mitsubishi Electric Corp Laser heat treatment method, laser heat treatment apparatus and semiconductor device
JP3648399B2 (en) 1999-03-18 2005-05-18 株式会社東芝 semiconductor device
JP2000278306A (en) * 1999-03-26 2000-10-06 Mitsubishi Electric Corp Atm ring network
US6285002B1 (en) 1999-05-10 2001-09-04 Bryan Kok Ann Ngoi Three dimensional micro machining with a modulated ultra-short laser pulse
US6555781B2 (en) 1999-05-10 2003-04-29 Nanyang Technological University Ultrashort pulsed laser micromachining/submicromachining using an acoustooptic scanning device with dispersion compensation
JP2000323441A (en) 1999-05-10 2000-11-24 Hitachi Cable Ltd Method for cutting optical wave guide circuit chip formed on ceramic substrate
US6420245B1 (en) 1999-06-08 2002-07-16 Kulicke & Soffa Investments, Inc. Method for singulating semiconductor wafers
US6562698B2 (en) 1999-06-08 2003-05-13 Kulicke & Soffa Investments, Inc. Dual laser cutting of wafers
JP2000349107A (en) 1999-06-09 2000-12-15 Nitto Denko Corp Manufacture of semiconductor sealing chip module and its fixing sheet
KR100626983B1 (en) * 1999-06-18 2006-09-22 미쓰보시 다이야몬도 고교 가부시키가이샤 Scribing method by use of laser
US6229113B1 (en) 1999-07-19 2001-05-08 United Technologies Corporation Method and apparatus for producing a laser drilled hole in a structure
US6344402B1 (en) 1999-07-28 2002-02-05 Disco Corporation Method of dicing workpiece
TW404871B (en) 1999-08-02 2000-09-11 Lg Electronics Inc Device and method for machining transparent medium by laser
JP2001047264A (en) 1999-08-04 2001-02-20 Seiko Epson Corp Photoelectric device, its manufacture and electronics
KR100578309B1 (en) * 1999-08-13 2006-05-11 삼성전자주식회사 Apparatus for cutting glass with laser and method for cutting glass using the same
JP2001064029A (en) 1999-08-27 2001-03-13 Toyo Commun Equip Co Ltd Multilayered glass substrate and its cutting method
US6472295B1 (en) * 1999-08-27 2002-10-29 Jmar Research, Inc. Method and apparatus for laser ablation of a target material
JP4493127B2 (en) 1999-09-10 2010-06-30 シャープ株式会社 Manufacturing method of nitride semiconductor chip
US6359254B1 (en) 1999-09-30 2002-03-19 United Technologies Corporation Method for producing shaped hole in a structure
US6229114B1 (en) 1999-09-30 2001-05-08 Xerox Corporation Precision laser cutting of adhesive members
JP3932743B2 (en) 1999-11-08 2007-06-20 株式会社デンソー Manufacturing method of pressure contact type semiconductor device
JP4180206B2 (en) 1999-11-12 2008-11-12 リンテック株式会社 Manufacturing method of semiconductor device
TR200201402T2 (en) * 1999-11-24 2003-03-21 Applied Photonics, Inc. method and apparatus for separating non-metallic materials.
JP5408829B2 (en) 1999-12-28 2014-02-05 ゲットナー・ファンデーション・エルエルシー Method for manufacturing active matrix substrate
US6612035B2 (en) 2000-01-05 2003-09-02 Patrick H. Brown Drywall cutting tool
JP2001196282A (en) 2000-01-13 2001-07-19 Hitachi Ltd Semiconductor device and its manufacturing method
JP2001250798A (en) 2000-03-06 2001-09-14 Sony Corp Method and apparatus for dividing material along scribing line
DE10015702A1 (en) * 2000-03-29 2001-10-18 Vitro Laser Gmbh Method for introducing at least one internal engraving into a flat body and device for carrying out the method
TW504425B (en) 2000-03-30 2002-10-01 Electro Scient Ind Inc Laser system and method for single pass micromachining of multilayer workpieces
JP2001284292A (en) 2000-03-31 2001-10-12 Toyoda Gosei Co Ltd Chip division method for semiconductor wafer
WO2001080308A2 (en) 2000-04-14 2001-10-25 S.O.I.Tec Silicon On Insulator Technologies Method for cutting out at least a thin layer in a substrate or ingot, in particular made of semiconductor material(s)
US6367175B2 (en) * 2000-04-22 2002-04-09 S&S Trust Low turbulence air blast system
US6333486B1 (en) 2000-04-25 2001-12-25 Igor Troitski Method and laser system for creation of laser-induced damages to produce high quality images
AU6140201A (en) * 2000-05-11 2001-11-20 Ptg Prec Technology Ct Ltd Llc System for cutting brittle materials
JP4697823B2 (en) 2000-05-16 2011-06-08 株式会社ディスコ Method for dividing brittle substrate
TW443581U (en) 2000-05-20 2001-06-23 Chipmos Technologies Inc Wafer-sized semiconductor package structure
JP2001339638A (en) 2000-05-26 2001-12-07 Hamamatsu Photonics Kk Streak camera device
JP2001345252A (en) 2000-05-30 2001-12-14 Hyper Photon Systens Inc Laser cutter
JP2001354439A (en) 2000-06-12 2001-12-25 Matsushita Electric Ind Co Ltd Method for working glass substrate and method for making high-frequency circuit
JP3650000B2 (en) 2000-07-04 2005-05-18 三洋電機株式会社 Nitride-based semiconductor laser device and method for manufacturing nitride semiconductor laser device
US6399914B1 (en) * 2000-07-10 2002-06-04 Igor Troitski Method and laser system for production of high quality laser-induced damage images by using material processing made before and during image creation
JP3906653B2 (en) 2000-07-18 2007-04-18 ソニー株式会社 Image display device and manufacturing method thereof
US6376797B1 (en) 2000-07-26 2002-04-23 Ase Americas, Inc. Laser cutting of semiconductor materials
JP2002047025A (en) 2000-07-31 2002-02-12 Seiko Epson Corp Cutting method of substrate, and manufacturing method of electrooptical device using it and laser cutting device for it and electrooptical device and electronic equipment
JP2002050589A (en) 2000-08-03 2002-02-15 Sony Corp Method and device for stretching and separating semiconductor wafer
US6726631B2 (en) 2000-08-08 2004-04-27 Ge Parallel Designs, Inc. Frequency and amplitude apodization of transducers
US6325855B1 (en) 2000-08-09 2001-12-04 Itt Manufacturing Enterprises, Inc. Gas collector for epitaxial reactors
JP3479833B2 (en) 2000-08-22 2003-12-15 日本電気株式会社 Laser correction method and apparatus
JP3722731B2 (en) 2000-09-13 2005-11-30 浜松ホトニクス株式会社 Laser processing method
JP4837320B2 (en) 2000-09-13 2011-12-14 浜松ホトニクス株式会社 Processing object cutting method
JP4964376B2 (en) 2000-09-13 2012-06-27 浜松ホトニクス株式会社 Laser processing apparatus and laser processing method
JP3761567B2 (en) 2000-09-13 2006-03-29 浜松ホトニクス株式会社 Laser processing method
JP2003001458A (en) 2000-09-13 2003-01-08 Hamamatsu Photonics Kk Laser beam machining method
JP2003039184A (en) 2000-09-13 2003-02-12 Hamamatsu Photonics Kk Laser beam machining method
JP3626442B2 (en) 2000-09-13 2005-03-09 浜松ホトニクス株式会社 Laser processing method
JP4659300B2 (en) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 Laser processing method and semiconductor chip manufacturing method
JP3761565B2 (en) 2000-09-13 2006-03-29 浜松ホトニクス株式会社 Laser processing method
JP4762458B2 (en) 2000-09-13 2011-08-31 浜松ホトニクス株式会社 Laser processing equipment
JP2002192371A (en) 2000-09-13 2002-07-10 Hamamatsu Photonics Kk Laser beam machining method and laser beam machining device
JP3408805B2 (en) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 Cutting origin region forming method and workpiece cutting method
JP3751970B2 (en) 2000-09-13 2006-03-08 浜松ホトニクス株式会社 Laser processing equipment
US6847003B2 (en) 2000-10-13 2005-01-25 Tokyo Electron Limited Plasma processing apparatus
JP3660294B2 (en) 2000-10-26 2005-06-15 株式会社東芝 Manufacturing method of semiconductor device
US6720522B2 (en) 2000-10-26 2004-04-13 Kabushiki Kaisha Toshiba Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining
JP3332910B2 (en) 2000-11-15 2002-10-07 エヌイーシーマシナリー株式会社 Wafer sheet expander
JP2002158276A (en) 2000-11-20 2002-05-31 Hitachi Chem Co Ltd Adhesive sheet for sticking wafer and semiconductor device
US6875379B2 (en) 2000-12-29 2005-04-05 Amkor Technology, Inc. Tool and method for forming an integrated optical circuit
US6545339B2 (en) 2001-01-12 2003-04-08 International Business Machines Corporation Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication
JP2002226796A (en) 2001-01-29 2002-08-14 Hitachi Chem Co Ltd Pressure-sensitive adhesive sheet for sticking wafer and semiconductor device
TW521310B (en) 2001-02-08 2003-02-21 Toshiba Corp Laser processing method and apparatus
US6527965B1 (en) 2001-02-09 2003-03-04 Nayna Networks, Inc. Method for fabricating improved mirror arrays for physical separation
US6770544B2 (en) 2001-02-21 2004-08-03 Nec Machinery Corporation Substrate cutting method
SG179310A1 (en) 2001-02-28 2012-04-27 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW473896B (en) 2001-03-20 2002-01-21 Chipmos Technologies Inc A manufacturing process of semiconductor devices
US8217304B2 (en) 2001-03-29 2012-07-10 Gsi Group Corporation Methods and systems for thermal-based laser processing a multi-material device
US6932933B2 (en) * 2001-03-30 2005-08-23 The Aerospace Corporation Ultraviolet method of embedding structures in photocerams
WO2002082540A1 (en) 2001-03-30 2002-10-17 Fujitsu Limited Semiconductor device, method of manufacture thereof, and semiconductor substrate
KR100701013B1 (en) 2001-05-21 2007-03-29 삼성전자주식회사 Method and Apparatus for cutting non-metal substrate using a laser beam
US20020198567A1 (en) * 2001-06-07 2002-12-26 Yona Keisari Electro-endocytotic therapy as a treatment modality of cancer
JP2003017790A (en) 2001-07-03 2003-01-17 Matsushita Electric Ind Co Ltd Nitride-based semiconductor device and manufacturing method
JP2003046177A (en) 2001-07-31 2003-02-14 Matsushita Electric Ind Co Ltd Method of manufacturing semiconductor laser
JP2003154517A (en) 2001-11-21 2003-05-27 Seiko Epson Corp Method and equipment for fracturing fragile material and manufacturing method for electronic component
EP1329946A3 (en) * 2001-12-11 2005-04-06 Sel Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device including a laser crystallization step
US6608370B1 (en) 2002-01-28 2003-08-19 Motorola, Inc. Semiconductor wafer having a thin die and tethers and methods of making the same
US6908784B1 (en) 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
WO2003076119A1 (en) 2002-03-12 2003-09-18 Hamamatsu Photonics K.K. Method of cutting processed object
JP3670267B2 (en) 2002-03-12 2005-07-13 浜松ホトニクス株式会社 Laser processing method
EP1494271B1 (en) 2002-03-12 2011-11-16 Hamamatsu Photonics K.K. Method for dicing substrate
WO2003076118A1 (en) 2002-03-12 2003-09-18 Hamamatsu Photonics K.K. Semiconductor substrate, semiconductor chip, and semiconductor device manufacturing method
JP2003338636A (en) 2002-03-12 2003-11-28 Hamamatsu Photonics Kk Manufacturing method of light-emitting device, light emitting diode, and semiconductor laser element
JP4509720B2 (en) 2002-03-12 2010-07-21 浜松ホトニクス株式会社 Laser processing method
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
JP2006135355A (en) 2002-03-12 2006-05-25 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
JP3935186B2 (en) 2002-03-12 2007-06-20 浜松ホトニクス株式会社 Semiconductor substrate cutting method
TWI520269B (en) 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
JP4358502B2 (en) 2002-03-12 2009-11-04 浜松ホトニクス株式会社 Semiconductor substrate cutting method
JP2003338468A (en) 2002-03-12 2003-11-28 Hamamatsu Photonics Kk Manufacturing method of light-emitting element, light- emitting diode, and semiconductor laser element
US6744009B1 (en) 2002-04-02 2004-06-01 Seagate Technology Llc Combined laser-scribing and laser-breaking for shaping of brittle substrates
US6787732B1 (en) 2002-04-02 2004-09-07 Seagate Technology Llc Method for laser-scribing brittle substrates and apparatus therefor
NL1021421C2 (en) * 2002-09-10 2004-03-11 Fountain Patents B V Device and method for manufacturing products from a warm plastic mass.
EP1588793B1 (en) 2002-12-05 2012-03-21 Hamamatsu Photonics K.K. Laser processing devices
JP2004188422A (en) 2002-12-06 2004-07-08 Hamamatsu Photonics Kk Device and method for machining laser beam
JP4334864B2 (en) 2002-12-27 2009-09-30 日本電波工業株式会社 Thin plate crystal wafer and method for manufacturing crystal resonator
FR2852250B1 (en) 2003-03-11 2009-07-24 Jean Luc Jouvin Protective sheath for cannula, an injection kit comprising such ankle and needle equipped with such ankle
AU2003220847A1 (en) 2003-03-12 2004-09-30 Hamamatsu Photonics K.K. Laser beam machining method
GB2404280B (en) 2003-07-03 2006-09-27 Xsil Technology Ltd Die bonding
US7605344B2 (en) 2003-07-18 2009-10-20 Hamamatsu Photonics K.K. Laser beam machining method, laser beam machining apparatus, and laser beam machining product
US20050018037A1 (en) * 2003-07-22 2005-01-27 Lee Tae-Kyoung Multi-beam laser scanning unit and laser-beam deflection compensating method
JP4563097B2 (en) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 Semiconductor substrate cutting method
JP2005086175A (en) 2003-09-11 2005-03-31 Hamamatsu Photonics Kk Method of manufacturing semiconductor thin film, semiconductor thin film, semiconductor thin-film chip, electron tube and light detector
EP1705764B1 (en) 2004-01-07 2012-11-14 Hamamatsu Photonics K. K. Semiconductor light-emitting device and its manufacturing method
JP4601965B2 (en) 2004-01-09 2010-12-22 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
JP4509578B2 (en) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
JP4598407B2 (en) 2004-01-09 2010-12-15 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
US20050177288A1 (en) 2004-02-06 2005-08-11 Sullivan James D. Interdependent control of aftermarket vehicle accessories without invasive control connections
KR20070005713A (en) 2004-03-30 2007-01-10 하마마츠 포토닉스 가부시키가이샤 Laser processing method and semiconductor chip
WO2005098915A1 (en) 2004-03-30 2005-10-20 Hamamatsu Photonics K.K. Laser processing method and semiconductor chip
JP4536407B2 (en) 2004-03-30 2010-09-01 浜松ホトニクス株式会社 Laser processing method and object to be processed
JP4733934B2 (en) 2004-06-22 2011-07-27 株式会社ディスコ Wafer processing method
JP4634089B2 (en) 2004-07-30 2011-02-23 浜松ホトニクス株式会社 Laser processing method
CN101434010B (en) 2004-08-06 2011-04-13 浜松光子学株式会社 Laser processing method and semiconductor device
JP4754801B2 (en) 2004-10-13 2011-08-24 浜松ホトニクス株式会社 Laser processing method
JP4781661B2 (en) 2004-11-12 2011-09-28 浜松ホトニクス株式会社 Laser processing method
JP4917257B2 (en) 2004-11-12 2012-04-18 浜松ホトニクス株式会社 Laser processing method
KR101067042B1 (en) 2004-12-13 2011-09-22 엘지디스플레이 주식회사 Device for driving a display device
JP4198123B2 (en) 2005-03-22 2008-12-17 浜松ホトニクス株式会社 Laser processing method
JP4776994B2 (en) 2005-07-04 2011-09-21 浜松ホトニクス株式会社 Processing object cutting method
JP4749799B2 (en) 2005-08-12 2011-08-17 浜松ホトニクス株式会社 Laser processing method
JP4762653B2 (en) 2005-09-16 2011-08-31 浜松ホトニクス株式会社 Laser processing method and laser processing apparatus
JP4237745B2 (en) 2005-11-18 2009-03-11 浜松ホトニクス株式会社 Laser processing method
JP4907965B2 (en) 2005-11-25 2012-04-04 浜松ホトニクス株式会社 Laser processing method
JP4804911B2 (en) 2005-12-22 2011-11-02 浜松ホトニクス株式会社 Laser processing equipment
JP4907984B2 (en) 2005-12-27 2012-04-04 浜松ホトニクス株式会社 Laser processing method and semiconductor chip
JP5183892B2 (en) 2006-07-03 2013-04-17 浜松ホトニクス株式会社 Laser processing method
EP1875983B1 (en) 2006-07-03 2013-09-11 Hamamatsu Photonics K.K. Laser processing method and chip
JP4954653B2 (en) 2006-09-19 2012-06-20 浜松ホトニクス株式会社 Laser processing method
US8188404B2 (en) 2006-09-19 2012-05-29 Hamamatsu Photonics K.K. Laser processing method and laser processing apparatus
JP5101073B2 (en) 2006-10-02 2012-12-19 浜松ホトニクス株式会社 Laser processing equipment
JP4964554B2 (en) 2006-10-03 2012-07-04 浜松ホトニクス株式会社 Laser processing method
JP5132911B2 (en) 2006-10-03 2013-01-30 浜松ホトニクス株式会社 Laser processing method
EP2070636B1 (en) 2006-10-04 2015-08-05 Hamamatsu Photonics K.K. Laser processing method
JP5336054B2 (en) 2007-07-18 2013-11-06 浜松ホトニクス株式会社 Processing information supply system provided with processing information supply device
JP4402708B2 (en) 2007-08-03 2010-01-20 浜松ホトニクス株式会社 Laser processing method, laser processing apparatus and manufacturing method thereof
JP5225639B2 (en) 2007-09-06 2013-07-03 浜松ホトニクス株式会社 Manufacturing method of semiconductor laser device
JP5342772B2 (en) 2007-10-12 2013-11-13 浜松ホトニクス株式会社 Processing object cutting method
JP5449665B2 (en) 2007-10-30 2014-03-19 浜松ホトニクス株式会社 Laser processing method
JP5134928B2 (en) 2007-11-30 2013-01-30 浜松ホトニクス株式会社 Workpiece grinding method
JP5054496B2 (en) 2007-11-30 2012-10-24 浜松ホトニクス株式会社 Processing object cutting method
JP5241525B2 (en) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 Laser processing equipment

Also Published As

Publication number Publication date
KR20180042462A (en) 2018-04-25
US20060160331A1 (en) 2006-07-20
KR100853055B1 (en) 2008-08-19
CN103551746A (en) 2014-02-05
EP2213403A1 (en) 2010-08-04
CN105108349B (en) 2018-02-23
CN103551736A (en) 2014-02-05
JP2009241154A (en) 2009-10-22
TWI250060B (en) 2006-03-01
EP2228164B1 (en) 2015-05-27
EP2228165B1 (en) 2015-01-07
US20130017670A1 (en) 2013-01-17
EP2251134A1 (en) 2010-11-17
EP2228163B1 (en) 2015-06-24
EP2359976A1 (en) 2011-08-24
US20110037149A1 (en) 2011-02-17
US20120228276A1 (en) 2012-09-13
CN103612338A (en) 2014-03-05
CN101670485B (en) 2015-06-10
CN103551744A (en) 2014-02-05
CN101134265A (en) 2008-03-05
US20110027972A1 (en) 2011-02-03
CN101670494B (en) 2012-10-31
CN103551747A (en) 2014-02-05
CN101136361A (en) 2008-03-05
TWI271251B (en) 2007-01-21
CN101670493A (en) 2010-03-17
KR101046840B1 (en) 2011-07-06
CN101195190A (en) 2008-06-11
EP2228165A1 (en) 2010-09-15
KR20070097599A (en) 2007-10-04
KR20090115966A (en) 2009-11-10
US20150111365A1 (en) 2015-04-23
US7592238B2 (en) 2009-09-22
US20110027971A1 (en) 2011-02-03
CN101670493B (en) 2014-10-01
CN103551747B (en) 2017-01-04
EP2228166A1 (en) 2010-09-15
CN101195190B (en) 2010-10-06
KR100685528B1 (en) 2007-02-22
CN103537796B (en) 2016-03-02
US7615721B2 (en) 2009-11-10
KR20110127257A (en) 2011-11-24
US8946592B2 (en) 2015-02-03
CN103537809B (en) 2016-01-20
SG146432A1 (en) 2008-10-30
EP2204254A2 (en) 2010-07-07
EP2204254A3 (en) 2010-07-21
KR20140142372A (en) 2014-12-11
US6992026B2 (en) 2006-01-31
US8937264B2 (en) 2015-01-20
US20120190175A1 (en) 2012-07-26
CN103551745B (en) 2017-01-18
CN105108348B (en) 2017-05-31
CN105108348A (en) 2015-12-02
CN103551738B (en) 2017-05-17
US8716110B2 (en) 2014-05-06
EP2324948A1 (en) 2011-05-25
JP2009214182A (en) 2009-09-24
AT552064T (en) 2012-04-15
US20110021004A1 (en) 2011-01-27
ES2527922T3 (en) 2015-02-02
KR100934300B1 (en) 2009-12-29
CN101110392A (en) 2008-01-23
KR100667460B1 (en) 2007-01-10
EP2228163A1 (en) 2010-09-15
KR20080039543A (en) 2008-05-07
US9837315B2 (en) 2017-12-05
CN103551736B (en) 2015-07-15
US20180068897A1 (en) 2018-03-08
KR20140033254A (en) 2014-03-17
US8227724B2 (en) 2012-07-24
JP2002192367A (en) 2002-07-10
KR20030029990A (en) 2003-04-16
CN101502913B (en) 2011-09-07
US20100055876A1 (en) 2010-03-04
CN103537809A (en) 2014-01-29
KR20100091247A (en) 2010-08-18
JP5138800B2 (en) 2013-02-06
CN101670494A (en) 2010-03-17
WO2002022301A1 (en) 2002-03-21
US20100176100A1 (en) 2010-07-15
CN1473087A (en) 2004-02-04
CN103551737A (en) 2014-02-05
EP1338371A4 (en) 2008-08-06
US20050181581A1 (en) 2005-08-18
EP2251135A1 (en) 2010-11-17
CN101134265B (en) 2011-01-19
CN105108349A (en) 2015-12-02
CN103551738A (en) 2014-02-05
KR101881549B1 (en) 2018-07-25
CN101502913A (en) 2009-08-12
CN101136361B (en) 2010-06-16
EP2218539A1 (en) 2010-08-18
CN1683106A (en) 2005-10-19
KR20130063553A (en) 2013-06-14
JP4890594B2 (en) 2012-03-07
CN101670484A (en) 2010-03-17
US7396742B2 (en) 2008-07-08
KR101432955B1 (en) 2014-08-22
US8933369B2 (en) 2015-01-13
KR20180031079A (en) 2018-03-27
EP2204255A2 (en) 2010-07-07
KR20050073628A (en) 2005-07-14
KR20150065917A (en) 2015-06-15
CN101670484B (en) 2014-10-01
US20060040473A1 (en) 2006-02-23
CN103551745A (en) 2014-02-05
KR20120092727A (en) 2012-08-21
KR20160014773A (en) 2016-02-11
KR101506429B1 (en) 2015-03-26
KR101081656B1 (en) 2011-11-09
EP2324948B1 (en) 2014-11-26
EP1338371B1 (en) 2012-04-04
CN103537796A (en) 2014-01-29
CN103551744B (en) 2016-01-20
CN106825940A (en) 2017-06-13
US8927900B2 (en) 2015-01-06
CN101110392B (en) 2012-03-28
US7825350B2 (en) 2010-11-02
SG2009061698A (en) 2014-08-28
KR20060108277A (en) 2006-10-17
US20050189330A1 (en) 2005-09-01
SG10201406382YA (en) 2014-11-27
KR100945980B1 (en) 2010-03-10
CN103551748B (en) 2016-05-25
KR101871557B1 (en) 2018-06-26
EP2251135B1 (en) 2014-12-31
KR102002740B1 (en) 2019-07-23
US7626137B2 (en) 2009-12-01
US8283595B2 (en) 2012-10-09
US20120205357A1 (en) 2012-08-16
US8969761B2 (en) 2015-03-03
TW200539980A (en) 2005-12-16
US20120279947A1 (en) 2012-11-08
ES2528600T3 (en) 2015-02-10
AU8622701A (en) 2002-03-26
KR101881548B1 (en) 2018-07-25
US8946591B2 (en) 2015-02-03
ES2526418T3 (en) 2015-01-12
JP2011245557A (en) 2011-12-08
EP2359976B1 (en) 2017-03-15
US20050184037A1 (en) 2005-08-25
US7732730B2 (en) 2010-06-08
CN100553852C (en) 2009-10-28
US20050194364A1 (en) 2005-09-08
CN105108350B (en) 2017-05-31
KR20090100454A (en) 2009-09-23
KR20110022059A (en) 2011-03-04
CN103612338B (en) 2015-07-15
KR101248280B1 (en) 2013-03-27
EP2228166B1 (en) 2015-01-14
EP2204255A3 (en) 2010-07-21
EP2204255B1 (en) 2019-03-06
CN103551737B (en) 2016-01-27
CN100471609C (en) 2009-03-25
US20040002199A1 (en) 2004-01-01
KR101348509B1 (en) 2014-01-10
US8946589B2 (en) 2015-02-03
KR101158657B1 (en) 2012-06-26
CN101670485A (en) 2010-03-17
CN105108350A (en) 2015-12-02
ES2383956T3 (en) 2012-06-27
JP4659300B2 (en) 2011-03-30
EP2228164A1 (en) 2010-09-15
EP1338371A1 (en) 2003-08-27
CN103551748A (en) 2014-02-05
KR100781845B1 (en) 2007-12-03
CN103551746B (en) 2016-12-07
US7547613B2 (en) 2009-06-16
US20050173387A1 (en) 2005-08-11
ES2529201T3 (en) 2015-02-17
JP4880722B2 (en) 2012-02-22

Similar Documents

Publication Publication Date Title
DK1117502T4 (en) Welding method
DK0937528T3 (en) Escape tool and method for its manufacture
DE60141508D1 (en) Bioabcable immunomodulatore formulations and method for their application
DE69833968D1 (en) Laser processing method, device and control method
DE60041900D1 (en) Method and device for grooving and / or cutting flat-shaped adjacent elements
DE50011412D1 (en) Method and device for welding
FR2818358B1 (en) Method for destruction and / or inerting waste
DE69940693D1 (en) Pulse control in laser systems
DE69420971D1 (en) Marking agent and laser marking method
DE69939779D1 (en) Method and arrangement for differentiating between
DE69905342D1 (en) Method and device for monitoring and controlling the laser wavelength
GB2364428B (en) Editing apparatus and editing method
AU3849001A (en) Optical device and method for multi-angle laser light scatter
DE60112857D1 (en) Adaptive power amplifier system and method
DE69638302D1 (en) Laser marking system and method for gemstones
AU1422702A (en) Speech generating system and method
AU6158901A (en) Osteoimplant and method for making same
AU2304699A (en) Method of optimizing the operation points of lasers and means for carrying out the method
GB2385346B (en) Formation cutting method and system
DE60232918D1 (en) Laser engraving methods and laser engraved products
MXPA03002680A (en) Short range spread-spectrum radiolocation system and method.
AU9067501A (en) Method and system for perforating
AU3864001A (en) Optimal symbology illumination-apparatus and method
AU3290902A (en) Integrated life planning method and systems and products for implementation
AU3657402A (en) Routing method and apparatus

Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed
KB Patent renewed
KB Patent renewed
KB Patent renewed