IL154869D0 - Integrating metal with ultra low-k dielectrics - Google Patents

Integrating metal with ultra low-k dielectrics


Publication number
IL154869D0 IL15486901A IL15486901A IL154869D0 IL 154869 D0 IL154869 D0 IL 154869D0 IL 15486901 A IL15486901 A IL 15486901A IL 15486901 A IL15486901 A IL 15486901A IL 154869 D0 IL154869 D0 IL 154869D0
Prior art keywords
ultra low
integrating metal
Prior art date
Application number
Original Assignee
Acm Res Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US23358700P priority Critical
Application filed by Acm Res Inc filed Critical Acm Res Inc
Priority to PCT/US2001/029173 priority patent/WO2002023616A1/en
Publication of IL154869D0 publication Critical patent/IL154869D0/en


IL15486901A 2000-09-18 2001-09-18 Integrating metal with ultra low-k dielectrics IL154869D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US23358700P true 2000-09-18 2000-09-18
PCT/US2001/029173 WO2002023616A1 (en) 2000-09-18 2001-09-18 Integrating metal with ultra low-k dielectrics

Publications (1)

Publication Number Publication Date
IL154869D0 true IL154869D0 (en) 2003-10-31



Family Applications (1)

Application Number Title Priority Date Filing Date
IL15486901A IL154869D0 (en) 2000-09-18 2001-09-18 Integrating metal with ultra low-k dielectrics

Country Status (10)

Country Link
US (1) US7119008B2 (en)
EP (1) EP1325516A4 (en)
JP (1) JP2004509467A (en)
KR (1) KR101031682B1 (en)
CN (2) CN101577247B (en)
AU (1) AU9276201A (en)
CA (1) CA2421799A1 (en)
IL (1) IL154869D0 (en)
TW (1) TW518707B (en)
WO (1) WO2002023616A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US7066800B2 (en) 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6537144B1 (en) 2000-02-17 2003-03-25 Applied Materials, Inc. Method and apparatus for enhanced CMP using metals having reductive properties
US6811680B2 (en) 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US6951599B2 (en) 2002-01-22 2005-10-04 Applied Materials, Inc. Electropolishing of metallic interconnects
AU2003230847A1 (en) * 2002-04-09 2003-10-27 Rensselaer Polytechnic Institute Electrochemical planarization of metal feature surfaces
JP2006128722A (en) * 2002-04-12 2006-05-18 Renesas Technology Corp Semiconductor device
TWI278962B (en) 2002-04-12 2007-04-11 Hitachi Ltd Semiconductor device
US6984301B2 (en) * 2002-07-18 2006-01-10 Micron Technology, Inc. Methods of forming capacitor constructions
US6848970B2 (en) 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US7070207B2 (en) * 2003-04-22 2006-07-04 Ibiden Co., Ltd. Substrate for mounting IC chip, multilayerd printed circuit board, and device for optical communication
US7382012B2 (en) * 2006-02-24 2008-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing parasitic capacitance of MIM capacitor in integrated circuits by reducing effective dielectric constant of dielectric layer
JP5194393B2 (en) * 2006-06-23 2013-05-08 東京エレクトロン株式会社 A method of manufacturing a semiconductor device
US8268722B2 (en) * 2009-06-03 2012-09-18 Novellus Systems, Inc. Interfacial capping layers for interconnects
CN102332427A (en) * 2011-10-13 2012-01-25 上海华力微电子有限公司 Method for manufacturing first copper interconnection layer
CN103692293B (en) * 2012-09-27 2018-01-16 盛美半导体设备(上海)有限公司 Stress-free polishing apparatus and polishing method
US10181443B2 (en) * 2013-02-04 2019-01-15 Taiwan Semiconductor Manufacturing Company Limited Support structure for barrier layer of semiconductor device
US9633896B1 (en) 2015-10-09 2017-04-25 Lam Research Corporation Methods for formation of low-k aluminum-containing etch stop films

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
US5880018A (en) 1996-10-07 1999-03-09 Motorola Inc. Method for manufacturing a low dielectric constant inter-level integrated circuit structure
JP3116897B2 (en) 1998-03-18 2000-12-11 日本電気株式会社 Fine wiring forming method
US6284050B1 (en) * 1998-05-18 2001-09-04 Novellus Systems, Inc. UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition
US6395152B1 (en) * 1998-07-09 2002-05-28 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
CN1180133C (en) * 1998-10-14 2004-12-15 法拉第技术公司 Electrodeposition of metals in smal recesses using modulated electric fields
US6259160B1 (en) * 1999-04-21 2001-07-10 Advanced Micro Devices, Inc. Apparatus and method of encapsulated copper (Cu) Interconnect formation
US6136707A (en) * 1999-10-02 2000-10-24 Cohen; Uri Seed layers for interconnects and methods for fabricating such seed layers
US6252290B1 (en) * 1999-10-25 2001-06-26 Chartered Semiconductor Manufacturing Ltd. Method to form, and structure of, a dual damascene interconnect device
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece
US6790336B2 (en) * 2002-06-19 2004-09-14 Intel Corporation Method of fabricating damascene structures in mechanically weak interlayer dielectrics

Also Published As

Publication number Publication date
US7119008B2 (en) 2006-10-10
KR20030040468A (en) 2003-05-22
TW518707B (en) 2003-01-21
CN101577247A (en) 2009-11-11
CN101577247B (en) 2011-12-14
KR101031682B1 (en) 2011-04-29
EP1325516A2 (en) 2003-07-09
US20040266130A1 (en) 2004-12-30
CA2421799A1 (en) 2002-03-21
WO2002023616A1 (en) 2002-03-21
AU9276201A (en) 2002-03-26
EP1325516A4 (en) 2007-06-06
JP2004509467A (en) 2004-03-25
CN1732561A (en) 2006-02-08
WO2002023616A8 (en) 2002-07-11

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