IL147301A0 - Method of projecting an underlying wiring layer during dual damascene processing - Google Patents

Method of projecting an underlying wiring layer during dual damascene processing

Info

Publication number
IL147301A0
IL147301A0 IL14730100A IL14730100A IL147301A0 IL 147301 A0 IL147301 A0 IL 147301A0 IL 14730100 A IL14730100 A IL 14730100A IL 14730100 A IL14730100 A IL 14730100A IL 147301 A0 IL147301 A0 IL 147301A0
Authority
IL
Israel
Prior art keywords
projecting
wiring layer
layer during
dual damascene
damascene processing
Prior art date
Application number
IL14730100A
Other languages
English (en)
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/345,586 external-priority patent/US6406995B1/en
Application filed by Intel Corp filed Critical Intel Corp
Publication of IL147301A0 publication Critical patent/IL147301A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IL14730100A 1999-06-30 2000-06-05 Method of projecting an underlying wiring layer during dual damascene processing IL147301A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/345,586 US6406995B1 (en) 1998-09-30 1999-06-30 Pattern-sensitive deposition for damascene processing
PCT/US2000/040108 WO2001001480A1 (en) 1999-06-30 2000-06-05 Method of protecting an underlying wiring layer during dual damascene processing

Publications (1)

Publication Number Publication Date
IL147301A0 true IL147301A0 (en) 2002-08-14

Family

ID=23355627

Family Applications (2)

Application Number Title Priority Date Filing Date
IL14730100A IL147301A0 (en) 1999-06-30 2000-06-05 Method of projecting an underlying wiring layer during dual damascene processing
IL147301A IL147301A (en) 1999-06-30 2001-12-25 Method for protection and concealment of a wiring layer during dual sample processing

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL147301A IL147301A (en) 1999-06-30 2001-12-25 Method for protection and concealment of a wiring layer during dual sample processing

Country Status (8)

Country Link
EP (1) EP1192656A1 (xx)
JP (1) JP4675534B2 (xx)
KR (1) KR100452418B1 (xx)
AU (1) AU5790800A (xx)
HK (1) HK1042380A1 (xx)
IL (2) IL147301A0 (xx)
TW (1) TW531789B (xx)
WO (1) WO2001001480A1 (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6576550B1 (en) 2000-06-30 2003-06-10 Infineon, Ag ‘Via first’ dual damascene process for copper metallization
WO2002003457A2 (en) * 2000-06-30 2002-01-10 Infineon Technologies Ag Via first dual damascene process for copper metallization
KR100393974B1 (ko) * 2001-01-12 2003-08-06 주식회사 하이닉스반도체 듀얼 다마신 형성 방법
KR100419901B1 (ko) * 2001-06-05 2004-03-04 삼성전자주식회사 듀얼 다마신 배선을 가지는 반도체 소자의 제조방법
JP2002373936A (ja) * 2001-06-14 2002-12-26 Nec Corp デュアルダマシン法による配線形成方法
KR100545220B1 (ko) 2003-12-31 2006-01-24 동부아남반도체 주식회사 반도체 소자의 듀얼 다마신 배선 형성 방법
JP5096669B2 (ja) 2005-07-06 2012-12-12 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
KR100691105B1 (ko) * 2005-09-28 2007-03-09 동부일렉트로닉스 주식회사 듀얼 다마신 공정을 이용한 구리 배선 형성 방법
JP2009016596A (ja) * 2007-07-05 2009-01-22 Elpida Memory Inc 半導体装置及び半導体装置の製造方法
JP4891296B2 (ja) * 2008-07-03 2012-03-07 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP5641681B2 (ja) * 2008-08-08 2014-12-17 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置の製造方法
US10170354B2 (en) * 2015-04-12 2019-01-01 Tokyo Electron Limited Subtractive methods for creating dielectric isolation structures within open features

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0609496B1 (de) * 1993-01-19 1998-04-15 Siemens Aktiengesellschaft Verfahren zur Herstellung einer Kontakte und diese verbindende Leiterbahnen umfassenden Metallisierungsebene
US5705430A (en) * 1995-06-07 1998-01-06 Advanced Micro Devices, Inc. Dual damascene with a sacrificial via fill
JPH08335634A (ja) * 1995-06-08 1996-12-17 Toshiba Corp 半導体装置の製造方法
US5702982A (en) * 1996-03-28 1997-12-30 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making metal contacts and interconnections concurrently on semiconductor integrated circuits
JPH10223755A (ja) * 1997-02-03 1998-08-21 Hitachi Ltd 半導体集積回路装置の製造方法
JP3183238B2 (ja) * 1997-11-27 2001-07-09 日本電気株式会社 半導体装置の製造方法
US6057239A (en) * 1997-12-17 2000-05-02 Advanced Micro Devices, Inc. Dual damascene process using sacrificial spin-on materials
US6387819B1 (en) * 1998-04-29 2002-05-14 Applied Materials, Inc. Method for etching low K dielectric layers
US6245662B1 (en) * 1998-07-23 2001-06-12 Applied Materials, Inc. Method of producing an interconnect structure for an integrated circuit
JP3734390B2 (ja) * 1998-10-21 2006-01-11 東京応化工業株式会社 埋込材およびこの埋込材を用いた配線形成方法
JP2000150644A (ja) * 1998-11-10 2000-05-30 Mitsubishi Electric Corp 半導体デバイスの製造方法
JP4082812B2 (ja) * 1998-12-21 2008-04-30 富士通株式会社 半導体装置の製造方法および多層配線構造の形成方法

Also Published As

Publication number Publication date
JP4675534B2 (ja) 2011-04-27
WO2001001480A1 (en) 2001-01-04
AU5790800A (en) 2001-01-31
KR20020020921A (ko) 2002-03-16
EP1192656A1 (en) 2002-04-03
HK1042380A1 (zh) 2002-08-09
TW531789B (en) 2003-05-11
KR100452418B1 (ko) 2004-10-12
JP2003528442A (ja) 2003-09-24
IL147301A (en) 2006-07-05

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Legal Events

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KB20 Patent renewed for 20 years